CN110161846A - A kind of semiconductor process parameter control method - Google Patents
A kind of semiconductor process parameter control method Download PDFInfo
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- CN110161846A CN110161846A CN201810081354.1A CN201810081354A CN110161846A CN 110161846 A CN110161846 A CN 110161846A CN 201810081354 A CN201810081354 A CN 201810081354A CN 110161846 A CN110161846 A CN 110161846A
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
- G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
- G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
- G05B13/042—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators in which a parameter or coefficient is automatically adjusted to optimise the performance
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
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- Automation & Control Theory (AREA)
- Health & Medical Sciences (AREA)
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- Computer Vision & Pattern Recognition (AREA)
- Evolutionary Computation (AREA)
- Medical Informatics (AREA)
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Abstract
The invention discloses a kind of semiconductor process parameter control method, method is as follows: obtaining the variable parameter of each link technique in process recipe, target value and change rate including each link variable parameter；Acquire the real-time change value of each link variable parameter；One group of Variable Control parameter is generated according to the real-time change value and the variable parameter；One group of variable power contorl parameters is generated according to the Variable Control parameter；The first value range electrical power or the second value range electrical power are supplied to each link technique respectively according to the variable power contorl parameters, to make each link technological work in the predetermined process stage respectively；The present invention has the advantage that compared with prior art requires high, complex process or the biggish occasion of production capacity in technique, the present invention can shorten the process time, reduce energy consumption, improve production capacity, entire technique is set to obtain the optimization of optimum degree, to be conducive to promote in semicon industry field.
Description
Technical field
The present invention relates to semiconducter process technical field more particularly to a kind of semiconductor process parameter controlling parties
Method.
Background technique
With the continuous improvement of semiconductor fabrication process and integrated level, to the process precision and entire work of silicon chip surface
The skill time, more stringent requirements are proposed, these all rely on temperature controlled precision and system response time in technical process；?
During automated production, equipment completes the processing to material according to the content of automation process formula (Recipe), that is, holds
Row process task；Wherein, the content of process recipe includes various techniques in the multiple steps and each step in process
Parameter value and duration, the quality of product can be improved by adjusting process recipe；So an advanced process recipe pair
Improving The Quality of Products has very important effect, especially in semiconductor production industry；The technical process of semiconductors manufacture is usual
It is influenced in the efficiency and the quality of production, such as the process of material of production process of semiconductor by many Variable Factors by semiconductor
The chamber pressure of equipment, the influence of the factors such as chamber temp, gas flow, the value of technological parameter is often in certain range
Interior fluctuation, therefore in order to which whether monitoring process parameter fluctuates in allowed limits, it is often opposite for processing parameter setting
Tolerance value, i.e. tolerance, tolerance be used for monitoring process parameter fluctuation, i.e., when in materiel machining equipment running process be more than this ginseng
When the fluctuation range that number allows, system will send warning message, limiting value of this setting value than technological parameter to operator
It is small, play forewarning function.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of semiconductor process parameter control methods
The present invention is achieved by the following technical solutions: a kind of semiconductor process parameter control method, method are as follows:
Obtain the variable parameter of each link technique in process recipe, target value and variation including each link variable parameter
Rate；
Acquire the real-time change value of each link variable parameter；
One group of Variable Control parameter is generated according to the real-time change value and the variable parameter；
One group of variable power contorl parameters is generated according to the Variable Control parameter；
The first value range electrical power or the second value range are supplied to each link technique respectively according to the variable power contorl parameters
Electrical power, to make each link technological work in the predetermined process stage respectively.
The present invention has the advantage that compared with prior art requires high, complex process or the biggish occasion of production capacity in technique,
The present invention can shorten the process time, reduce energy consumption, improve production capacity, so that entire technique is obtained the optimization of optimum degree, to be conducive to
It is promoted in semicon industry field.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
A kind of semiconductor process parameter control method provided in this embodiment, method are as follows:
Obtain the variable parameter of each link technique in process recipe, target value and variation including each link variable parameter
Rate；
Acquire the real-time change value of each link variable parameter；
One group of Variable Control parameter is generated according to the real-time change value and the variable parameter；
One group of variable power contorl parameters is generated according to the Variable Control parameter；
The first value range electrical power or the second value range are supplied to each link technique respectively according to the variable power contorl parameters
Electrical power, to make each link technological work in the predetermined process stage respectively.
It is the technological parameter in acquisition process recipe for temperature that the present embodiment, which selects variable parameter, and technological parameter includes
The target temperature value and heating rate of Equipment for Heating Processing；Measure the real time temperature of Equipment for Heating Processing；According to real time temperature and technique
Parameter generates one group of temperature control parameter；Wherein, temperature control parameter includes Equipment for Heating Processing temperature rise period and constant temperature stage
Switching command；One group of power contorl parameters is generated according to temperature control parameter；According to power contorl parameters, heat treated is set respectively
Available gives the first value range electrical power or the second value range electrical power, to make Equipment for Heating Processing work in temperature rise period or perseverance respectively
Thermophase；Wherein, the first value range is greater than the second value range；Temperature provided in this embodiment for semiconductor heat treatment equipment
Control system will be divided into different ranks according to the characteristic of semiconductor heat treatment equipment to the temperature controlled processes of Equipment for Heating Processing
Section carries out respectively, to the hot standby output high-power electric of heat treatment to obtain fast temperature increase property in the temperature rise period, in constant temperature rank
Section exports small-power electric power to it, to obtain good thermostatic control performance.
The present invention has the advantage that compared with prior art requires high, complex process or the biggish occasion of production capacity in technique,
The present invention can shorten the process time, reduce energy consumption, improve production capacity, so that entire technique is obtained the optimization of optimum degree, to be conducive to
It is promoted in semicon industry field.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (1)
1. a kind of semiconductor process parameter control method, which is characterized in that its method is as follows:
Obtain the variable parameter of each link technique in process recipe, target value and variation including each link variable parameter
Rate；
Acquire the real-time change value of each link variable parameter；
One group of Variable Control parameter is generated according to the real-time change value and the variable parameter；
One group of variable power contorl parameters is generated according to the Variable Control parameter；
The first value range electrical power or the second value range are supplied to each link technique respectively according to the variable power contorl parameters
Electrical power, to make each link technological work in the predetermined process stage respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810081354.1A CN110161846A (en) | 2018-01-29 | 2018-01-29 | A kind of semiconductor process parameter control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810081354.1A CN110161846A (en) | 2018-01-29 | 2018-01-29 | A kind of semiconductor process parameter control method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110161846A true CN110161846A (en) | 2019-08-23 |
Family
ID=67641072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810081354.1A Withdrawn CN110161846A (en) | 2018-01-29 | 2018-01-29 | A kind of semiconductor process parameter control method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110161846A (en) |
-
2018
- 2018-01-29 CN CN201810081354.1A patent/CN110161846A/en not_active Withdrawn
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190823 |
|
| WW01 | Invention patent application withdrawn after publication |