CN110146946A - A kind of Terahertz integrated device of asymmetry warp architecture - Google Patents
A kind of Terahertz integrated device of asymmetry warp architecture Download PDFInfo
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- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 12
- 238000011160 research Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 48
- 230000005540 biological transmission Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
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Abstract
The invention discloses a kind of Terahertz integrated devices of asymmetry warp architecture, including substrate and horizontally disposed metallic film on substrate, the metallic film is provided with three pieces, by centrally located linearly central metal film, it is constituted with the side metallic film of centrally disposed metallic film two sides, the side metallic film is in arc-shaped, it is open and is arranged far from central metal film side, angle between the line and central metal film in the circle of curvature center of circle of two blocks of side metallic films is less than 90 degree, regularly arranged broached-tooth design is provided on the two sidewalls of the central metal film and side metallic film.Device versatility of the invention is stronger, still can produce default effect under different-waveband, and without changing designed geometry, the scope of application of device can also extend, and can carry out the research of most of terahertz wave band.
Description
Technical field
The present invention relates to THz devices technical field more particularly to a kind of Terahertz of asymmetry warp architecture are integrated
Device.
Background technique
THz wave is normally defined electromagnetic wave of the frequency within the scope of 0.1~10THz.The English of Terahertz is
Terahertz (THz), 1THz=1012Hz, wavelength are 30~3000 μm.
Design for surface plasmons (surface plasmon polaritons, SPPs) device architecture, state
The research that inside and outside correlative study group Xiaoyong Liu was carried out in this aspect is as follows: Nanjing University's electronics science and engineering science
The flat plasma waveguide device based on symmetrical ripple membrane structure of group, electronic engineering, institute design, in shaped surfaces etc.
On the basis of gas ions (conformal surface plasmon, CSP), a kind of symmetrical sawtooth pattern bending metals structure is proposed,
Influence of its depth characteristic in terms of propagation distance is studied, while having carried out surface plasma in microwave frequency band and having swashed
The experimental study of first waveguiding structure.The height that result of study display reduces groove array can increase surface plasma excimer
Propagation distance, therefore the structure can be optimized, to make up the influence of a part of metal loss.
Surface plasmon polariton waveguide (surface plasmon polaritons waveguide) schematic diagram such as Fig. 1 institute
Show, by Fig. 2 we can see that this structure can only realize 90% or more output in a certain specific frequency, and cannot achieve
The output of certain frequency range.
Another similar scheme is towering et al. the three-layer stereo structure proposed of Huang of Guilin Electronic Science and Technology Univ.,
Shown in structural representation Fig. 3, superstructure is waveguide input layer, and the SPPs of generation is coupled to middle layer, is finally exported in the bottom,
For planar structure, manufacturing for multilayered structure is relatively more cumbersome.
Previous research is looked back, it is seen that the independence that many researchers design about device, the applicable wave band of device
Very short, versatility is very poor.The device of many researcher's designs only can just tell in some particular excitation frequency, change ginseng
It is also difficult to realize after number and generates preset effect in its all band, the design for SPPs device architecture, Nanjing University's electronic section
Learn and the research that carried out in this aspect of Liu Xiaoyong of electronic engineering, engineering college be as follows: design based on symmetrical corrugated film
The flat plasma waveguide device of structure realizes and is coupled and exported on two adjacent CSP plates.But for this
Analysis that the structure and relevant parameter that patent is related to are related to and less, has only carried out experimental verification, not on microwave frequency band
Can prove that can generate identical effect in Terahertz frequency range.
The various structures that Zhang Ying et al. is proposed in this article of Terahertz puppet surface plasma excimer sub-wavelength waveguide
Waveguide can only be verified the transmission that can support Terahertz and the locality for effectively improving sub-wavelength and reduce transmission loss, and
The versatility advantage that this patent is previously mentioned cannot be reached.
D.Martin-Cano proposes domino structure in the domino plasma for sub-wavelength Terahertz circuit
Plasma filled waveguide concept, this article be based on Meta Materials concept studies conducted analysis, it was therefore concluded that: surface propagate
Mode of electromagnetic wave be not very sensitive and superpower electromagnetic wave constraint ability to the width characteristic of domino structure and lower
Transmission loss, can only illustrate effectively guide Terahertz in the structural transmission, can not achieve Terahertz in certain frequency range
Transmission.
Summary of the invention
In view of this, making the object of the present invention is to provide a kind of Terahertz integrated device of asymmetry warp architecture
Under the premise of the geometrical parameters for not changing device, the transmission to Terahertz is realized, and there is good robustness and lead to
The property used.
The present invention solves above-mentioned technical problem by following technological means:
A kind of Terahertz integrated device of asymmetry warp architecture, including substrate and horizontally disposed metal on substrate
Film, the metallic film are provided with three pieces, by centrally located linearly central metal film and centrally disposed gold
The side metallic film for belonging to film two sides is constituted, and the side metallic film is in arc-shaped, and it is thin that opening is directed away from central metal
The setting of film side, the angle between the line and central metal film in the circle of curvature center of circle of two blocks of side metallic films are less than
90 degree, regularly arranged broached-tooth design is provided on the two sidewalls of the central metal film and side metallic film.
Further, the offset distance in the circle of curvature center of circle of two blocks of side metallic films is 0.5mm-3mm.
Further, the minimum interval of two pieces of adjacent metal films is 1 μm -5 μm.
Further, the width of the saw-tooth-type structures is 20 μm -50 μm, and cycle length is 30 μm -60 μm.
Further, the material of the metallic film is gold or silver.
Beneficial effects of the present invention:
1. device versatility is stronger, default effect still can produce under different-waveband, it is designed several without changing
What structure, it is only necessary to change several parameters in design, the scope of application of device can also extend, and can carry out most of THz wave
The research of section.
2. the strong robustness of device will not cause the wide fluctuations of device performance, therefore under the fluctuation of several parameters
It is not high to the requirement on machining accuracy of device, reduce processing cost.
Detailed description of the invention
Fig. 1 is the schematic diagram for the surface plasmon polariton waveguide that background of invention provides；
Fig. 2 is the output analogous diagram of the surface plasmon polariton waveguide in Fig. 1 that background of invention provides；
Fig. 3 is that a kind of structure of the surface plasmons device for three-layer stereo structure that background of invention provides is shown
It is intended to；
Fig. 4 is a kind of structural representation of the Terahertz integrated device of asymmetry warp architecture provided in an embodiment of the present invention
Figure；
Fig. 5 is a kind of terahertz light of the Terahertz integrated device of asymmetry warp architecture provided in an embodiment of the present invention
Lu Tu；
Fig. 6 is the stiffness of coupling figure of the Terahertz integrated device of the asymmetry warp architecture in Fig. 5；
Fig. 7 is the energy transfer losses between the waveguide of the Terahertz integrated device of the asymmetry warp architecture in Fig. 5
Curve graph；
Fig. 8 is visualization propagation path figure of the surface plasmons in three waveguides in Fig. 5.
Specific embodiment
Below with reference to the drawings and specific embodiments, the present invention is described in detail:
As shown in figure 4, a kind of Terahertz integrated device of asymmetry warp architecture of the invention, including substrate 4 and water
The flat metallic film being arranged on substrate 4, the material of the metallic film are gold or silver.As shown in figure 4, the metallic film
Three pieces are provided with, by centrally located linearly central metal film, and the side in centrally disposed metallic film two sides
Portion's metallic film constitute, central metal film be horizontal waveguide 2, the side metal foil of two sides be respectively left side metallic film and
Right side metallic film, left side metallic film are left waveguide 1, and right side metallic film is right waveguide 3, the left side metal
Film and right side metallic film are in arc-shaped, and opening is directed away from the setting of central metal film side, two pieces of adjacent metals
The minimum interval of film is 4 μm, the circle of curvature center of circle in the circle of curvature center of circle and right side metallic film of left side metallic film
Angle between line and central metal film is less than 90 degree, the offset in the circle of curvature center of circle of two blocks of side metallic films 3
Distance is 0.5mm-3mm, is provided with regularly arranged saw on the two sidewalls of the central metal film and side metallic film
Toothing, the width of the saw-tooth-type structures are 20 μm -50 μm, and cycle length is 30 μm -60 μm.
As shown in Figure 4, it is assumed that there are a three-dimensional system of coordinate, surface plasma excimer (surface in space
Plasmon polaritons, SPPs) it propagates to the right along the x-axis direction, except SPPs waveguide, perpendicular on the direction of propagation
Evanescent field is exponentially decayed, and when the evanescent field between two adjacent metallic films is overlapped, between them will at this time
Energy exchange is generated, energy will be transmitted on next metal thin film structure.
The normalization electric field of left side metallic film and central metal film, which is write, to be done:
Ψ1(x, z)=u1(z)exp(-iqx)(1)
Ψ2(x, z)=u2(z)exp(-iqx)(2)
Wherein, u1(z), u2(z) it is respectively surface etc. on two metal layers of left side metallic film and central metal film
Envelope on ion excimer.The attenuation rate of evanescent fieldWherein, εmIt is the dielectric constant of material,
ω is the frequency of incident light, transmissionA, d, h are respectively the width of zigzag structure, week
Phase and depth, g are the interval between two adjacent metal films.
The Ψ in transmission direction (x-axis direction)1(x, z), Ψ2(x, z) centainly meets Helmholtz equation, is based on coupled mode
Theory, the Helmholtz equation for having input source of our available following forms:
WhereinεgFor the dielectric constant of metallic film (gold).
It may finally obtain the coupling formula between two metallic films:
Wherein c12, c21For the coefficient of coup:
Thus form can also extrapolate the coupling formula between three metallic films are as follows:
a1, a2, a3Respectively correspond left side metallic film, central metal film, the SPPs electric field on the metallic film of right side
Amplitude.
The top view and Terahertz light path figure of the Terahertz integrated device for the asymmetry warp architecture that the present invention designs are such as
Shown in Fig. 5, black block arrow represents the optical path of incident terahertz light, and Terahertz light source is incident on through the sending of Terahertz generator 6
Then left waveguide 1 couples between left waveguide 1 and central waveguide 2, by transmitting and being coupled in right waveguide 3 most
It exports in a direction indicated by the arrow eventually.
Introduce the design that excited Raman insulation channel (STIRAP) is applied to surface plasmon wave guide, the technology quilt
The population transfer being widely used between energy level, due to the population transfer between energy level and the coupling energy transfer very class between waveguide
Seemingly, thus in recent years, in terms of STIRAP technology is widely used in the energy transfer between waveguide.
When Wave guide system energy adiabatic condition develop when, initial time C23> > C12, the C after transmitting a distance23<
< C12, such coefficient of coup design can be so that the energy being initially injected into left waveguide 1 be transferred completely into right waveguide 3.
In order to more intuitively show coupling effect, for example:
In the present embodiment, the following waveguiding structure of parameter setting:
1. circle of curvature center of circle offset distance δ=1.5mm between left waveguide 1 and right waveguide 3
2. radius of curvature R=45mm
3. horizontal waveguide length L=4mm
4. a=40 μm of the width of saw-tooth-type structures
5. d=50 μm of the period of saw-tooth-type structures
6. g=4 μm of shortest distance interval between waveguide
Calculated stiffness of coupling figure is as shown in Figure 6.
As shown in fig. 7, can be seen that the energy transport between waveguide according to the intensity map of SPPs, wherein simulation is real
In the case of border damage curve and the curve under ideal conditions is slightly different, but overall trend is consistent.Fig. 8 illustrates SPPs three
Visualization propagation path in a waveguide.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferred embodiment to this hair
It is bright to be described in detail, those skilled in the art should understand that, it can modify to technical solution of the present invention
Or equivalent replacement should all cover without departing from the objective and range of technical solution of the present invention in claim of the invention
In range.Technology not described in detail in the present invention, shape, construction portion are well-known technique.
Claims (5)
1. a kind of Terahertz integrated device of asymmetry warp architecture, it is characterised in that: including substrate and be horizontally set on lining
Metallic film on bottom, the metallic film are provided with three pieces, by centrally located linearly central metal film, and set
The side metallic film composition in central metal film two sides is set, the side metallic film is in arc-shaped, and opening is directed away from
Central metal film side setting, between the line and central metal film in the circle of curvature center of circle of two blocks of side metallic films
Angle less than 90 degree, be provided with regularly arranged sawtooth on the two sidewalls of the central metal film and side metallic film
Structure.
2. a kind of Terahertz integrated device of asymmetry warp architecture according to claim 1, which is characterized in that two pieces
The offset distance in the circle of curvature center of circle of the side metallic film is 0.5mm-3mm.
3. a kind of Terahertz integrated device of asymmetry warp architecture according to claim 2, which is characterized in that described
The minimum interval of two pieces of adjacent metal films is 1 μm -5 μm.
4. a kind of Terahertz integrated device of asymmetry warp architecture according to claim 3, which is characterized in that described
The width of saw-tooth-type structures is 20 μm -50 μm, and cycle length is 30 μm -60 μm.
5. a kind of Terahertz integrated device of asymmetry warp architecture according to claim 4, which is characterized in that described
The material of metallic film is gold or silver.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114436205A (en) * | 2021-12-21 | 2022-05-06 | 桂林电子科技大学 | Plasma particle conveyor belt based on symmetrical metal strip structure |
| CN114899692A (en) * | 2022-05-09 | 2022-08-12 | 电子科技大学 | Array visible light radiation source based on metal plasma wave |
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| JP2006162736A (en) * | 2004-12-03 | 2006-06-22 | Matsushita Electric Ind Co Ltd | Terahertz wave generating device |
| CN104730624A (en) * | 2015-03-31 | 2015-06-24 | 东南大学 | Device for realizing conversion between space waves and artificial terahertz surface plasmon polariton (SPP) waves |
| CN105789800A (en) * | 2016-03-11 | 2016-07-20 | 厦门大学 | Terahertz waveguide based on spoof surface plasmon polaritons |
| CN106443850A (en) * | 2016-09-20 | 2017-02-22 | 上海理工大学 | One-dimensional superstructure terahertz CDMA (code division multiple access) system time domain encoder and decoder |
| CN107809007A (en) * | 2017-11-02 | 2018-03-16 | 安阳师范学院 | A kind of multiband Terahertz Meta Materials wave absorbing device |
| CN210427847U (en) * | 2019-06-06 | 2020-04-28 | 桂林电子科技大学 | Terahertz integrated device with asymmetric bending structure |
-
2019
- 2019-06-06 CN CN201910489347.XA patent/CN110146946B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006162736A (en) * | 2004-12-03 | 2006-06-22 | Matsushita Electric Ind Co Ltd | Terahertz wave generating device |
| CN104730624A (en) * | 2015-03-31 | 2015-06-24 | 东南大学 | Device for realizing conversion between space waves and artificial terahertz surface plasmon polariton (SPP) waves |
| CN105789800A (en) * | 2016-03-11 | 2016-07-20 | 厦门大学 | Terahertz waveguide based on spoof surface plasmon polaritons |
| CN106443850A (en) * | 2016-09-20 | 2017-02-22 | 上海理工大学 | One-dimensional superstructure terahertz CDMA (code division multiple access) system time domain encoder and decoder |
| CN107809007A (en) * | 2017-11-02 | 2018-03-16 | 安阳师范学院 | A kind of multiband Terahertz Meta Materials wave absorbing device |
| CN210427847U (en) * | 2019-06-06 | 2020-04-28 | 桂林电子科技大学 | Terahertz integrated device with asymmetric bending structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114436205A (en) * | 2021-12-21 | 2022-05-06 | 桂林电子科技大学 | Plasma particle conveyor belt based on symmetrical metal strip structure |
| CN114899692A (en) * | 2022-05-09 | 2022-08-12 | 电子科技大学 | Array visible light radiation source based on metal plasma wave |
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