CN110143760A - A kind of glass frit composition and silver paste and battery containing it - Google Patents
A kind of glass frit composition and silver paste and battery containing it Download PDFInfo
- Publication number
- CN110143760A CN110143760A CN201910539752.8A CN201910539752A CN110143760A CN 110143760 A CN110143760 A CN 110143760A CN 201910539752 A CN201910539752 A CN 201910539752A CN 110143760 A CN110143760 A CN 110143760A
- Authority
- CN
- China
- Prior art keywords
- weight
- glass frit
- parts
- frit composition
- silver paste
- Prior art date
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- 239000011521 glass Substances 0.000 title claims abstract description 61
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000004332 silver Substances 0.000 title abstract description 18
- 229910052709 silver Inorganic materials 0.000 title abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 239000004411 aluminium Substances 0.000 claims abstract description 14
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 239000010937 tungsten Substances 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000012074 organic phase Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000002241 glass-ceramic Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 27
- 230000009466 transformation Effects 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 20
- 239000010703 silicon Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000010410 layer Substances 0.000 description 11
- 239000002002 slurry Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical group [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical group [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical group O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical group O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000555268 Dendroides Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- JZJNHPJBZWEHPD-UHFFFAOYSA-N [F].[Na] Chemical compound [F].[Na] JZJNHPJBZWEHPD-UHFFFAOYSA-N 0.000 description 1
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical group O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000001761 ethyl methyl cellulose Substances 0.000 description 1
- 235000010944 ethyl methyl cellulose Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 description 1
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 description 1
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 1
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical group O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/008—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
- C03C17/009—Mixtures of organic and inorganic materials, e.g. ormosils and ormocers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/29—Mixtures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/114—Deposition methods from solutions or suspensions by brushing, pouring or doctorblading
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
Abstract
The present invention provides a kind of glass frit composition and contain its silver paste and battery.In terms of oxide weight, the glass frit composition include: the tellurium of (30-70) parts by weight, the lithium of (2-20) parts by weight, the aluminium of (2-15) parts by weight, (5-30) parts by weight molybdenum and/or tungsten.The present invention also provides the conductive silver pastes formed by above-mentioned glass frit composition, and the electrode and battery that are formed by the conductive silver paste.The sintering temperature of conductive silver paste can be effectively reduced in glass frit composition of the invention, promotes the dense sintering of silver powder, improves the transformation efficiency of battery.
Description
Technical field
The present invention relates to a kind of glass frit composition more particularly to a kind of front electricity for passivating back emitter battery
The glass frit composition of pole, belongs to technical field of solar batteries.
Background technique
With photovoltaic power generation cheap internet access progress faster, high-efficiency photovoltaic technology is badly in need of developing and being widely applied, wherein back
Face passivation emitter crystal silicon solar batteries technology is current on the largest scaleization promotional technique.Currently, passivating back emitter is brilliant
Silicon solar cell technologies change compared with existing conventional crystal silicon battery technology as oxidations more in the silicon base of the crystal silicon battery back side
The passivation layers such as aluminium, silicon nitride and silica, currently, commonly for aluminium oxide silicon nitride stack structure, wherein aluminium oxide rise
Field passivation, silicon nitride play protective action.
Currently, there are mainly two types of the process for producing of the passivating film of passivating back emitter battery: plasma chemistry
Be vapor-deposited (PECVD) and atomic layer deposition (ALD), when can have backside oxide al deposition in gas-phase deposition, leads to
It crosses gap between cell piece and graphite boat and forms one layer of aluminium oxide at battery front side edge around battery front side edge is plated to；Also it deposits
In some gas-phase depositions one layer of alumina flake directly can be formed in battery front side and the back side.
Lead to more than battery front side one layer of aluminium oxide based on passivating back emitter battery process, influences front electrode and silicon
The Ohmic contact of base, so, it is desirable that front electrode silver slurry not only can corroding silicon nitride layer, also to erode alumina layer could be with
Silicon substrate forms good ohmic contact.
Existing passivating back emitter battery front side electrode silver paste technology is helped as CN108147672A discloses addition corrosion
The glass powder of agent is used for the front main grid of passivating back emitter battery；CN107331433A is disclosed using sintering aids six
Fluorine sodium antimonate reduces positive silver-colored sintering temperature technology.The front electrode silver slurry of passivating back emitter battery at present, very in sintering
Be easy to appear EL blackening, sintering process window is very low, be difficult with battery line process matching, in addition, sintering furnace temperature fluctuation can also make
It is increased at cell piece bad product rate.
It adds sintering aids in the slurry as disclosed in CN108074656A, and uses the nano-silver powder of low melting point, drop
Low slurry sintering temperature can solve EL hair occur because sintering is insufficient after main grid positive silver paste is sintered in 730 DEG C of -820 DEG C of sintering
Secretly, nigrescence phenomenon, but individually it is easy to appear burn-off phenomenons for addition sintering aids, will also result in EL obfuscation, nigrescence phenomenon, burn
Junction temperature window is very low, in addition, nano-silver powder is easy to reunite, is unevenly distributed in the slurry, can also battery be easy to cause to be sintered
Unevenly, so as to cause EL obfuscation, nigrescence phenomenon, cell conversion efficiency is reduced.
Summary of the invention
In order to solve the above-mentioned technical problem, the purpose of the present invention is to provide one kind can effectively solve the problems, such as EL blackening
The conversion ratio of conductive silver paste, the battery prepared by the conductive silver paste is higher.
In order to achieve the above technical purposes, present invention firstly provides a kind of glass frit compositions, in terms of oxide weight,
The glass frit composition includes: the tellurium of (30-70) parts by weight, the lithium of (2-20) parts by weight, the aluminium of (2-15) parts by weight, (5-30)
The molybdenum and/or tungsten of parts by weight, wherein the total weight of the glass frit composition is 100 parts by weight.
In glass frit composition of the invention, by limiting the tellurium of ratio, the synergistic effect of lithium, aluminium, molybdenum and/or tungsten, drop
Al suboxide-silicon nitride-silver system contact berrier reduces the series resistance Rs of cell piece, promotes battery fill factor FF, from
And improve the transformation efficiency of battery.
In glass frit composition of the invention, by limiting the tellurium of ratio, the synergistic effect of lithium, aluminium, molybdenum and/or tungsten, drop
The crystallization degree of low glass frit composition makes the wetting passivating film of liquid glass compound powder longer time, can be rotten at low temperature
Aluminium oxide and silicon nitride double membrane structure are lost, and then the sintering temperature of conductive silver paste can be effectively reduced, promotes the densification of silver powder
Sintering, sintering temperature window is big, avoids burning impermeable or burning bring EL blackening problem.
In a specific embodiment of the invention, also contains in the glass frit composition and be greater than 0 less than or equal to 25 weight
The lead and/or bismuth of part.
A certain amount of lead and/or bismuth are added in glass frit composition of the invention, adjustable glass frit composition
Softening point increases the stability of composition.
In further embodiment of the invention, other metals are also contained in the glass frit composition, wherein
Other metals can for Na, K, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, B, P, Si, Ta, La, Ce, Nd,
The combination of one or more of Eu, Er, Zr, Sn, Sb and Se.
Further, in terms of the oxide weight of other metals, the contents of other metals can be to be less than etc. greater than 0
In 10 parts by weight.Wherein, other metals can be with the characteristic of auxiliary adjustment glass frit composition and conductive silver paste, such as temperature flowing
Property, dilation performance.
In a specific embodiment of the invention, various raw materials can be the oxidation of respective metal in glass frit composition
Object and/or heat resolve are the compound of corresponding oxide.
In a specific embodiment of the invention, the raw material that tellurium can use is tellurium dioxide and/or telluric acid anhydride.Lithium
The raw material that can be used is lithia and/or lithium carbonate.The raw material that aluminium can use is aluminium oxide and/or aluminium hydroxide.Tungsten can
Using the raw material used as tungstic acid and/or tungsten dioxide.The raw material that molybdenum can use is molybdenum trioxide and/or molybdenum dioxide.
In a specific embodiment of the invention, the raw material that lead can use is lead monoxide and/or brown lead oxide.Bismuth
The raw material that can be used is bismuth oxide.
In a specific embodiment of the invention, the raw material that boron can use is boron oxide.The raw material that silicon can use
For silica.The raw material that calcium can use is calcium carbonate and/or calcium oxide.The raw material that vanadium can use is vanadic anhydride.
The raw material that chromium can use is chrome green.
In a specific embodiment of the invention, which can be unformed glass frit composition, knot
One or more of crystal glass compound powder, partially crystallizable glass frit composition, the unformed glass frit composition in part
Combination.
In a specific embodiment of the invention, in terms of oxide weight, the raw material of the glass frit composition forms packet
Include: the tellurium of (30-70) parts by weight, the lithium of (2-20) parts by weight, the aluminium of (2-15) parts by weight, (5-30) parts by weight molybdenum and/or
Tungsten, wherein the total weight of each raw material of the glass frit composition is 100 parts by weight.
Glass frit composition of the invention can be prepared by following steps:
The raw material of glass frit composition is mixed, the heating melting 30min-120min at 750 DEG C -1000 DEG C；
Through cooling, glass frit composition fragment is obtained；
Ball milling is carried out after glass frit composition fragment is further crushed, obtains the glass powder combination of required particle diameter distribution
Object.
In a specific embodiment of the invention, when carrying out heating melting, it can be carried out in resistance furnace.
In a specific embodiment of the invention, specifically, to the cooling no particular/special requirement of operation, water can be passed through
It quenches, steel plate or stainless steel twin rollers are cooled down.
In a specific embodiment of the invention, as long as required partial size can be obtained when ball milling, such as can be with
Ball milling is carried out by planetary ball mill, obtains the glass frit composition of required particle diameter distribution.
In order to achieve the above technical purposes, invention further provides a kind of conductive silver paste, which includes the present invention
Above-mentioned glass frit composition.
Conductive silver paste of the invention, due to using above-mentioned glass frit composition of the invention, so that conduction of the invention
Silver paste has lower sintering temperature, and the dense sintering of silver powder may be implemented, being capable of corrosion oxidation aluminium and silicon nitride at low temperature
Double membrane structure, sintering temperature window is big, and is able to solve EL blackening problem, improves cell conversion efficiency.
In a specific embodiment of the invention, by the gross mass of the conductive silver paste be 100 parts by weight in terms of, the conductive silver
Slurry includes: the above-mentioned glass frit composition of the invention of (0.5-5) parts by weight, the silver powder of (70-92) parts by weight and (5-28) weight
Measure the organic phase of part.
In a specific embodiment of the invention, the silver powder used is one of spherical, sheet and dendroid form
Or the combination of two or more forms.
Specifically, the silver powder used is spherical silver powder.
More specifically, the silver powder used is spherical silver powder with holes.
The tap density of silver powder of the invention is 4.8g/cm3-6.0g/cm3, D50 is 0.8 μm -2.2 μm, and specific surface area is
1.0m2/g-2m2/g。
In a specific embodiment of the invention, the raw material composition of organic phase is not particularly limited, this field is conventional
Organic phase use raw material.For example, organic phase may include resin, solvent and additive.
Wherein, resin can for one of cellulose, acrylic resin, epoxy resin, polyester resin, block resin or
Two or more combinations；
Wherein, cellulose can for ethylhydroxyethylcellulose, nitrocellulose, ethyl cellulose, methylcellulose and
The combination of one or more of hydroxypropyl methyl cellulose.
Wherein, solvent can be terpinol, butyl carbitol, butyl carbitol acetic acid, propylene glycol methyl ether acetate, second two
The combination of one or more of alcohol ether, 2-Butoxyethyl acetate, petroleum ether and turpentine oil.
Wherein, additive can adjust slurry rheological property energy for thixotropic agent, levelling agent, lubricant, plasticizer etc., keep it suitable
In silk-screen printing technique, good fine line style can be formed.
In a specific embodiment of the invention, conductive silver paste can be prepared by following steps:
Step 1: resin, solvent and additive are mixed evenly at 25 DEG C -100 DEG C, prepare organic phase；
Step 2: by silver powder, glass powder, it is organic mix, stir evenly, obtain slurry；
Step 3: the slurry that grinding steps two obtain obtains average fineness≤10 μm, viscosity 50Pa.S-400PaS
Silver paste.
In a specific embodiment of the invention, grinding can use grinding distribution machine.
Invention further provides a kind of electrode, which can be the front electrode of passivating back emitter battery, the electricity
Pole is prepared by above-mentioned conductive silver paste of the invention.
The present invention also provides a kind of battery, which includes above-mentioned electrode of the invention, and battery here includes but not
It is limited to passivating back emitter battery.
In the present invention, passivating back emitter battery refers to the PERC battery of this field, is referred to as passivation transmitting
Area back side battery etc..
In a specific embodiment of the invention, PERC battery can be prepared by following steps:
By making herbs into wool, diffusion, polished backside, etching and decontamination glass, deposit passivation layer, deposition antireflection layer, obtain
PERC silicon chip of solar cell；
In above-mentioned silicon wafer shady face by the way of silk-screen printing printed back silver paste and back field aluminum paste, in silicon wafer after drying
Front silk-screen printing front side silver paste enters continuous tunnel furnace in 150 DEG C of -200 DEG C of drying, and carries out heating sintering (230 DEG C of -380 DEG C of shapes
At silicon oxide protective layer, 600 DEG C of -800 DEG C of sintering are warming up to, peak value sintering time is 1s-3s), obtain solar battery.
Wherein, back side silver paste, back side aluminum slurry are this field conventional slurry, are not particularly limited.Front side silver paste is this
The conductive silver paste of invention.
Battery of the invention qualification rate with higher, and conversion ratio is also higher.
Glass frit composition of the invention is suitable for preparing the conductive silver paste of the front electrode of passivating back emitter battery,
The sintering temperature (sintering temperature window is big) that conductive silver paste cannot be can be effectively reduced, promotes the dense sintering of silver powder；It can also
Corrosion oxidation aluminium and silicon nitride double membrane structure at low temperature.It not only can solve the oxidized aluminium of battery front side and silicon nitride duplicature
Structure also can solve backside oxide aluminium around battery front side edge part is plated to, and causing battery edge is that aluminium oxide and silicon nitride are double-deck
Membrane structure, centre are the obfuscation of the edge EL caused by silicon nitride monofilm structure, On Blackening.
It is easy to the process adjustments of battery producing line by the solar battery that glass frit composition of the invention is formed, promotes battery
Qualification rate improves cell conversion efficiency.
Specific embodiment
In order to which technical characteristic of the invention, purpose and beneficial effect are more clearly understood, now to skill of the invention
Art scheme carries out described further below, but should not be understood as that limiting the scope of the invention.
Embodiment 1
Present embodiments provide a series of glass frit composition comprising enter component shown in table 1.
It is made after conductive silver paste using glass frit composition shown in table 1 and prepares solar battery, and use solar energy mould
Quasi- device tests transformation efficiency.
Solar energy simulates electrical efficiency tester, tests (air quality AM1.5, intensity of illumination 1000W/ at the standard conditions
m2, 25 DEG C of test temperature), solar battery EL defect test instrument test, wherein transformation efficiency is that 5 fronts of continuous printing are
The average conversion efficiency of the PERC cell piece of silicon nitride-silicon oxide aluminium two film construction, the whole EL test of 5 cell pieces, as a result such as
Shown in table 1.
Wherein, solar battery is prepared in accordance with the following steps:
By making herbs into wool, diffusion, polished backside, etching and decontamination glass, backside deposition passivation layer, (or the positive back side is heavy simultaneously
Product passivation layer), front deposition antireflection layer, obtain PERC silicon chip of solar cell；
In above-mentioned silicon wafer shady face by the way of silk-screen printing printed back silver paste and back field aluminum paste, in silicon wafer after drying
Positive to use silk-screen printing front side silver paste, drying sintering in continuous tunnel furnace, sintering peak temperature is 600 DEG C -850 DEG C, obtains the sun
It can battery；Wherein, sintering furnace set temperature program: 250 DEG C -300 DEG C -300 DEG C -420 DEG C -560 DEG C -600 DEG C -700 DEG C -800
℃-840℃。
As it can be seen from table 1 result surface, the EL test of the front electrode silver slurry of glass frit composition of the invention is good
Good, without dim spot and blackening, incident photon-to-electron conversion efficiency is higher.
Claims (10)
1. a kind of glass frit composition, which is characterized in that in terms of oxide weight, which includes: (30-70) weight
Measure the tellurium of part, the lithium of (2-20) parts by weight, the aluminium of (2-15) parts by weight, (5-30) parts by weight molybdenum and/or tungsten, wherein the glass
The total weight of glass compound powder is 100 parts by weight.
2. glass frit composition according to claim 1, which is characterized in that also containing greater than 0 in the glass frit composition
Less than or equal to the lead and/or bismuth of 25 parts by weight.
3. glass frit composition according to claim 1 or 2, which is characterized in that also contain it in the glass frit composition
His metal, wherein other described metals are Na, K, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, B, P, Si,
The combination of one or more of Ta, La, Ce, Nd, Eu, Er, Zr, Sn, Sb and Se.
4. glass frit composition according to claim 3, which is characterized in that in terms of the oxide of other metals, it is described its
The content of his metal is to be less than or equal to 10 parts by weight greater than 0.
5. glass frit composition according to claim 1, which is characterized in that the glass frit composition is unformed glass powder
One of composition, glass ceramics compound powder, partially crystallizable glass frit composition, the unformed glass frit composition in part or
Two or more combinations.
6. glass frit composition according to claim 1, which is characterized in that in terms of oxide weight, glass powder combination
The raw material composition of object includes: the tellurium of (30-70) parts by weight, the lithium of (2-20) parts by weight, the aluminium of (2-15) parts by weight, (5-30) weight
Measure the molybdenum and/or tungsten of part, wherein the total weight of each raw material of the glass frit composition is 100 parts by weight.
7. a kind of conductive silver paste, which is characterized in that the conductive silver paste is combined comprising glass powder described in any one of claims 1-6
Object.
8. conductive silver paste according to claim 7, which is characterized in that with the gross mass of the conductive silver paste for 100 parts by weight
Meter, which includes: the glass frit composition described in any one of claims 1-6 of (0.5-5) parts by weight, (70-92)
The organic phase of the silver powder of parts by weight and (5-28) parts by weight.
9. a kind of electrode, which is the front electrode of passivating back emitter battery, which is characterized in that the electrode is wanted by right
Conductive silver paste described in asking 7 or 8 is prepared.
10. a kind of battery, which is characterized in that the battery contains electrode as claimed in claim 9.
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| CN114283963A (en) * | 2021-12-20 | 2022-04-05 | 江苏索特电子材料有限公司 | Conductive paste composition, preparation method and application thereof, and crystalline silicon solar cell |
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