CN110138212A - Half-bridge driven no dead-time control method, control device and charging equipment - Google Patents
Half-bridge driven no dead-time control method, control device and charging equipment Download PDFInfo
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- CN110138212A CN110138212A CN201910473744.8A CN201910473744A CN110138212A CN 110138212 A CN110138212 A CN 110138212A CN 201910473744 A CN201910473744 A CN 201910473744A CN 110138212 A CN110138212 A CN 110138212A
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- Prior art keywords
- oxide
- semiconductor
- metal
- pwm signal
- dead
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1582—Buck-boost converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
A kind of half-bridge driven no dead-time control method, control device and charging equipment are applied to synchronous rectification DC/DC converter, this method comprises: driving decompression metal-oxide-semiconductor and the work of afterflow metal-oxide-semiconductor in switch state with high-frequency PWM signal in BUCK mode；The work of boosting metal-oxide-semiconductor is driven to complete switch off state and driving rectification metal-oxide-semiconductor work in approximate fully on state in approximation with low frequency pwm signal；In BOOST mode, the work of decompression metal-oxide-semiconductor is driven to complete switch off state in approximation in approximate fully on state and driving afterflow metal-oxide-semiconductor work with low frequency pwm signal；Drive boosting metal-oxide-semiconductor and rectification metal-oxide-semiconductor work in switch state with high-frequency PWM signal.The control device can realize the step in the above method, including memory module and MCU processing module.The charging equipment includes the control device.The transfer efficiency of converter can be improved in the present invention, and does not increase the complexity of circuit.
Description
Technical field
The present invention relates to synchronous rectification DC/DC converter control method and device, more particularly to one kind to be applied to application
In synchronous rectification DC/DC converter half-bridge driven no dead-time control method of BUCK-BOOST topological structure, control device and
Using the charging equipment of the control device.
Background technique
The synchronous rectification DC of BUCK-BOOST topological structure/DC converter has input voltage and output voltage range all
Wider feature is typically used in intelligent charge equipment, digital power etc..
Fig. 1 shows a kind of block diagram of charging equipment, including input interface 1, output interface 13, is connected to input and connects
Synchronous rectification DC/DC converter 10, first voltage sensor 2, second voltage sensor 12 between mouthful 1 and output interface 13,
Current sensor 11, MCU processing module 14, MCU processing module 14 include ADC (analog-to-digital conversion) unit 15, PWM (pulsewidth modulation)
Controller unit 16, synchronous rectification DC/DC converter 10 include decompression metal-oxide-semiconductor 3, afterflow metal-oxide-semiconductor 5, inductance 6, boosting metal-oxide-semiconductor 8,
Metal-oxide-semiconductor 9, MOS half bridge drive unit 4 are rectified, 7 be ground in Fig. 1.In practical application, the input voltage range of charging equipment is 10
To 48V, output voltage range is 5V to 62V, and output voltage and electric current are adjustable, is the electricity of different parameters with can be convenient
Realize efficient reliable Charge Management in pond.Its course of work is as follows:
BUCK mode: output interface is sent to after the electric energy that input interface 1 inputs is carried out decompression conversion under the mode.
Wherein, it is depressured metal-oxide-semiconductor 3 and afterflow metal-oxide-semiconductor 5 all works in switch state, the metal-oxide-semiconductor 8 that boosts is in an off state, rectifies metal-oxide-semiconductor 9
It is in the conductive state.The duty ratio of the pwm signal of decompression metal-oxide-semiconductor 3 and afterflow metal-oxide-semiconductor 5 is driven, by adjusting to adjust output electricity
The size of pressure and output electric current.
Boost mode: carry out the electric energy that input interface 1 inputs to be sent to output after boost conversion connecing under the mode
Mouthful.Wherein, boosting metal-oxide-semiconductor 8 and rectification metal-oxide-semiconductor 9 all work in switch state, and decompression metal-oxide-semiconductor 3 is in the conductive state, afterflow MOS
Pipe 5 is in an off state.The duty ratio of the pwm signal of boosting metal-oxide-semiconductor 8 and rectification metal-oxide-semiconductor 9 is driven by adjusting, it is defeated to adjust
The size of voltage and output electric current out.
Under above two mode, have metal-oxide-semiconductor (decompression metal-oxide-semiconductor or rectification metal-oxide-semiconductor) it is in the conductive state, one
Metal-oxide-semiconductor (afterflow metal-oxide-semiconductor or boosting metal-oxide-semiconductor) is in an off state.But in practice, it is ensured that the fully on and reason that complete switches off
Think state, needing to increase between gate-source of the auxiliary circuit to guarantee the metal-oxide-semiconductor has suitable drive level, this will increase electricity
Road complexity.So general way is: in BUCK mode, boosting metal-oxide-semiconductor 8 and rectification metal-oxide-semiconductor 9 are also by a duty ratio
Smaller, frequency is controlled with the pwm signal of the decompression switching frequency of metal-oxide-semiconductor identical (high frequency).Equally, in Boost mode, decompression
Metal-oxide-semiconductor 3 and afterflow metal-oxide-semiconductor 5 also smaller, frequency and the PWM of the switching frequency of metal-oxide-semiconductor identical (high frequency) of boosting by a duty
Signal control.Although such control mode not will increase the complexity of circuit, the switching loss of metal-oxide-semiconductor is larger, can shadow
Ring the transfer efficiency of DC/DC converter.
Summary of the invention
The object of the present invention is to provide a kind of half-bridge driven no dead-time control method, with do not increase circuit complexity it is same
When, improve the transfer efficiency of DC/DC converter.
Heretofore described " dead zone " is different from " dead zone " on ordinary meaning." dead time " on ordinary meaning is also referred to as
Make the PWM response time, when referring to PWM output, in order to occur that the upper down tube of H bridge or half-H-bridge will not because of switching speed problem
The protective time slot for simultaneously turning on and being arranged.Referring in the present invention without dead zone: in BUCK mode, boosting metal-oxide-semiconductor is in close
State is seemingly complete switched off, rectification metal-oxide-semiconductor is in approximate fully on state；In BOOST mode, decompression metal-oxide-semiconductor is in approximation
Fully on state, afterflow metal-oxide-semiconductor are in approximation and complete switch off state.
In order to achieve the above object, The technical solution adopted by the invention is as follows:
A kind of half-bridge driven no dead-time control method, synchronous rectification DC/DC applied to BUCK-BOOST topological structure turn
Parallel operation, the half-bridge driven no dead-time control method the following steps are included:
In BUCK mode, drive decompression metal-oxide-semiconductor and the work of afterflow metal-oxide-semiconductor in switch state with high-frequency PWM signal；Use low frequency
Pwm signal driving boosting metal-oxide-semiconductor work complete switches off state and driving rectification metal-oxide-semiconductor work in approximation and leads completely in approximation
Logical state；
In BOOST mode, drive the work of decompression metal-oxide-semiconductor in approximate fully on state and driving with low frequency pwm signal
The work of afterflow metal-oxide-semiconductor complete switches off state in approximation；Boosting metal-oxide-semiconductor and rectification metal-oxide-semiconductor work is driven to open with high-frequency PWM signal
Off status.
The low frequency pwm signal optimized frequency be less than 10Hz pwm signal, more preferable frequency between 0.03Hz to 2Hz it
Between pwm signal.
The present invention also provides a kind of half-bridge driven no dead-time control devices, the synchronization applied to BUCK-BOOST topological structure
DC/DC converter is rectified, the control device includes the memory module for being stored with computer-readable program, and the control device is also
Including with the memory module and the synchronous rectification DC/DC converter decompression metal-oxide-semiconductor, afterflow metal-oxide-semiconductor, boosting metal-oxide-semiconductor
MCU processing module being connected with rectification metal-oxide-semiconductor, being able to carry out described program, the MCU processing module execute described program
When, according to decompression metal-oxide-semiconductor, afterflow metal-oxide-semiconductor, boosting metal-oxide-semiconductor and rectification MOS as described in the driving such as the step of above-mentioned control method
Pipe.
In above-mentioned half-bridge driven no dead-time control device, the low frequency pwm signal optimized frequency is less than the PWM of 10Hz
Signal, more preferable frequency is between 0.03Hz to the pwm signal between 2Hz.
The present invention also provides a kind of charging equipment, the charging equipment includes being connected between input interface and output interface
Synchronous rectification DC/DC converter, and the control synchronous rectification DC/DC converter work control device, the control
Device is above-mentioned half-bridge driven no dead-time control device.
Compared with prior art, the present invention at least has the advantages that
The present invention drives synchronous rectification DC/DC converter using low frequency pwm signal, so that in BUCK mode and BOOST mould
When formula, corresponding metal-oxide-semiconductor is in approximation and complete switches off state and approximate fully on state.Since part metal-oxide-semiconductor works low
Frequency state, switching loss reduces, so effectively increasing the transfer efficiency of DC/DC converter.Moreover, low frequency pwm signal is by MCU
Processing module executes Program Generating and does not increase hardware circuit that is, by software realization, so not will increase the complexity of circuit.
Detailed description of the invention
Fig. 1 is a kind of block diagram of charging equipment；
Fig. 2 is the flow chart of an embodiment half-bridge driven no dead-time control method；
Fig. 3 is the block diagram of an embodiment half-bridge driven no dead-time control device.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples.
This half-bridge driven no dead-time control method is applied to synchronous rectification DC/DC conversion of BUCK-BOOST topological structure
Device, by software control, effectively improves synchronous rectification DC/DC converter on the basis of existing synchronous rectification DC/DC converter
Conversion frequency, and do not increase hardware cost.
As shown in Fig. 2, this half-bridge driven no dead-time control method specifically includes the following steps:
Step S1, operating mode is identified.Operating mode can be identified by the user instruction from man-machine interface.It can also be with
The voltage of the power supply of input interface is connected to by detection, the parameter for the battery pack for being connected to output interface works come automatic identification
Mode.
Step S2, whether BUCK mode.
Step S3, if it is BUCK mode, decompression metal-oxide-semiconductor 3 and the work of afterflow metal-oxide-semiconductor 5 is driven to open with high-frequency PWM signal
Off status；The work of boosting metal-oxide-semiconductor 8 is driven to complete switch off state and driving rectification 9 work of metal-oxide-semiconductor in approximation with low frequency pwm signal
Make in approximate fully on state, referring to Fig.1.
Step S4, whether BOOST mode.
Step S5, if it is BOOST mode, drive the work of decompression metal-oxide-semiconductor 3 approximate fully on low frequency pwm signal
State and driving afterflow metal-oxide-semiconductor 5 work and complete switch off state in approximation；Boosting metal-oxide-semiconductor 8 and whole is driven with high-frequency PWM signal
Flow the work of metal-oxide-semiconductor 9 in switch state, referring to Fig.1.
Wherein, the frequency of low frequency pwm signal can be calculated by bootstrap capacitor, impedance loop and metal-oxide-semiconductor parameter, in conjunction with survey
It tries to determine optimum frequency, is preferably arranged to 0.03Hz between 2Hz.
It may be noted that the high frequency in the present invention is for the low frequency pwm signal in the present invention.In the present invention
The frequency of high-frequency PWM signal and the frequency of synchronous rectification DC in the prior art/DC converter pwm signal are identical.
It can be seen from the above, the metal-oxide-semiconductor of the side BOOST, including boosting metal-oxide-semiconductor and rectification metal-oxide-semiconductor, work exist in BUCK mode
Under low-down frequency, the switching loss of these metal-oxide-semiconductors is greatly reduced, transfer efficiency is improved.Similarly, in BOOST mode,
The metal-oxide-semiconductor of the side BUCK, including decompression metal-oxide-semiconductor and afterflow metal-oxide-semiconductor, work at very low frequencies, greatly reduce these MOS
The switching loss of pipe, improves transfer efficiency.
Above-mentioned high-frequency PWM signal and low frequency pwm signal are by the PWM controller unit 16 in MCU processing module 14 (see Fig. 1)
(see Fig. 1) does not need additionally to increase hardware circuit, not will increase synchronous rectification DC/DC converter circuit by Software Create
Complexity.
A kind of half-bridge driven no dead-time control of the synchronous rectification DC applied to BUCK-BOOST topological structure/DC converter
Device.
Referring to figure 3., this half-bridge driven no dead-time control device includes: the memory module for being stored with computer-readable program
31 and MCU processing module 32, MCU processing module 32 are connected with the memory module 31, MCU processing module 32 also with it is synchronous whole
The decompression metal-oxide-semiconductor, afterflow metal-oxide-semiconductor, boosting metal-oxide-semiconductor for flowing DC/DC converter 33 are connected with rectification metal-oxide-semiconductor, MCU processing module 32
The program being able to carry out in memory module 31, when MCU processing module 32 executes described program, according to such as above-mentioned control method
Step drives the decompression metal-oxide-semiconductor, afterflow metal-oxide-semiconductor, boosting metal-oxide-semiconductor and rectification metal-oxide-semiconductor.
Wherein, low frequency pwm signal optimized frequency be less than 10Hz pwm signal, more preferable frequency between 0.03Hz to 2Hz it
Between pwm signal.
A kind of charging equipment, the charging equipment include the synchronous rectification being connected between its input interface and output interface
DC/DC converter, and the control synchronous rectification DC/DC converter work control device, the control device is above-mentioned
Half-bridge driven no dead-time control device.
Above by specific embodiment, invention is explained in detail, these detailed description are only limited to help
Those skilled in the art understand that the contents of the present invention, can not be interpreted as limiting the scope of the invention.Art technology
Personnel should be included in protection model of the invention to various retouchings, the equivalent transformation etc. that above scheme carries out under present inventive concept
In enclosing.
Claims (7)
1. a kind of half-bridge driven no dead-time control method, synchronous rectification DC/DC conversion applied to BUCK-BOOST topological structure
Device, which is characterized in that the half-bridge driven no dead-time control method the following steps are included:
In BUCK mode, drive decompression metal-oxide-semiconductor and the work of afterflow metal-oxide-semiconductor in switch state with high-frequency PWM signal；With low frequency PWM
Signal driving boosting metal-oxide-semiconductor work complete switches off state and driving rectification metal-oxide-semiconductor work in approximate fully on shape in approximation
State；
In BOOST mode, drive the work of decompression metal-oxide-semiconductor in approximate fully on state and driving afterflow with low frequency pwm signal
Metal-oxide-semiconductor work complete switches off state in approximation；Drive boosting metal-oxide-semiconductor and the work of rectification metal-oxide-semiconductor in switch shape with high-frequency PWM signal
State.
2. half-bridge driven no dead-time control method according to claim 1, it is characterised in that: the low frequency pwm signal
Frequency is less than 10Hz.
3. half-bridge driven no dead-time control method according to claim 1, it is characterised in that: the low frequency pwm signal
Frequency is between 0.03Hz between 2Hz.
4. a kind of half-bridge driven no dead-time control device, synchronous rectification DC/DC conversion applied to BUCK-BOOST topological structure
Device, it is characterised in that: the control device includes the memory module for being stored with computer-readable program, and the control device also wraps
Include with the memory module and the synchronous rectification DC/DC converter decompression metal-oxide-semiconductor, afterflow metal-oxide-semiconductor, boosting metal-oxide-semiconductor and
MCU processing module that rectification metal-oxide-semiconductor is connected, being able to carry out described program, the MCU processing module execute described program
When, according to the step of control method as described in claim 1 drive the decompression metal-oxide-semiconductor, afterflow metal-oxide-semiconductor, boosting metal-oxide-semiconductor and
Rectify metal-oxide-semiconductor.
5. half-bridge driven no dead-time control device according to claim 4, it is characterised in that: the low frequency pwm signal
Frequency is less than 10Hz.
6. half-bridge driven no dead-time control device according to claim 4, it is characterised in that: the low frequency pwm signal
Frequency is between 0.03Hz between 2Hz.
7. a kind of charging equipment, the charging equipment include be connected between input interface and output interface synchronous rectification DC/
DC converter, and the control synchronous rectification DC/DC converter work control device, it is characterised in that: the control dress
It is set to half-bridge driven no dead-time control device described in any one of claim 4 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910473744.8A CN110138212A (en) | 2019-06-01 | 2019-06-01 | Half-bridge driven no dead-time control method, control device and charging equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910473744.8A CN110138212A (en) | 2019-06-01 | 2019-06-01 | Half-bridge driven no dead-time control method, control device and charging equipment |
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| Publication Number | Publication Date |
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| CN110138212A true CN110138212A (en) | 2019-08-16 |
Family
ID=67579735
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910473744.8A Pending CN110138212A (en) | 2019-06-01 | 2019-06-01 | Half-bridge driven no dead-time control method, control device and charging equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707921A (en) * | 2019-11-29 | 2020-01-17 | 广东美的制冷设备有限公司 | Control method, control device, household electrical appliance and computer readable storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055335A (en) * | 2009-11-03 | 2011-05-11 | 立锜科技股份有限公司 | Boost-buck type power supply converter and control method thereof |
| CN102136797A (en) * | 2010-09-08 | 2011-07-27 | 上海岩芯电子科技有限公司 | Modulating method for noninverting Buck-Boost power inverter |
| CN106992679A (en) * | 2016-01-20 | 2017-07-28 | 立锜科技股份有限公司 | The buck suitching type power circuit and its control circuit and method of double set times |
-
2019
- 2019-06-01 CN CN201910473744.8A patent/CN110138212A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055335A (en) * | 2009-11-03 | 2011-05-11 | 立锜科技股份有限公司 | Boost-buck type power supply converter and control method thereof |
| CN102136797A (en) * | 2010-09-08 | 2011-07-27 | 上海岩芯电子科技有限公司 | Modulating method for noninverting Buck-Boost power inverter |
| CN106992679A (en) * | 2016-01-20 | 2017-07-28 | 立锜科技股份有限公司 | The buck suitching type power circuit and its control circuit and method of double set times |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707921A (en) * | 2019-11-29 | 2020-01-17 | 广东美的制冷设备有限公司 | Control method, control device, household electrical appliance and computer readable storage medium |
| CN110707921B (en) * | 2019-11-29 | 2021-09-10 | 广东美的制冷设备有限公司 | Control method, control device, household electrical appliance and computer readable storage medium |
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Application publication date: 20190816 |