CN110137312A - A method of improving silicon nitride passivation performance - Google Patents
A method of improving silicon nitride passivation performance Download PDFInfo
- Publication number
- CN110137312A CN110137312A CN201910509923.2A CN201910509923A CN110137312A CN 110137312 A CN110137312 A CN 110137312A CN 201910509923 A CN201910509923 A CN 201910509923A CN 110137312 A CN110137312 A CN 110137312A
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- CN
- China
- Prior art keywords
- silicon nitride
- improving
- microwave source
- passivation performance
- nitride passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000002161 passivation Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910000077 silane Inorganic materials 0.000 claims abstract description 10
- 239000011265 semifinished product Substances 0.000 claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000001727 in vivo Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of methods for improving silicon nitride passivation performance, comprising the following steps: after nitride deposition completion, solar cell semi-finished product continue to stay in reaction cavity a.；B. stop being passed through silane in reaction cavity, silicon nitride is bombarded using plasma microwave source.The power in the plasma microwave source is 6400w, bombardment time 240s.Plasma bombardment is carried out in the present invention after nitride deposition, will not influence the anti-PID performance of battery, and the effect obtained in tubular type PECVD and board-like PECVD board is almost the same, there is 0.05% or more promotion to PERC battery efficiency.
Description
Technical field
The invention belongs to photovoltaic technology field, and in particular to a method of improve silicon nitride passivation performance.
Background technique
Silicon nitride is that semiconductor and photovoltaic industry are widely used, a kind of time-honored surface passivation material.Such as
In the production of PERC battery, the production procedure of PERC battery includes: deposition backside passivation layer, is then open to form the back side and connect
Touching, this is two important steps more extra than conventional photovoltaic battery production process.Inside silicon wafer and the impurity of silicon chip surface and
Defect can adversely affect the performance of photovoltaic cell, and passivation procedure is exactly to be reduced by reducing the compound of surface carrier
Defect bring influences, to guarantee the efficiency of battery, therefore does not all have always to the research of silicon nitride passivation performance improvement scheme
Have and stopped.But existing technological means is all to carry out by adjusting the sedimentary condition of silicon nitride to the inactivating performance of silicon nitride
Optimization.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of method for improving silicon nitride passivation performance, silicon nitride is improved
Inactivating performance.
The technical solution of the present invention is as follows: a kind of method for improving silicon nitride passivation performance, comprising the following steps:
A. after nitride deposition completion, solar cell semi-finished product continue to stay in reaction cavity；
B. stop being passed through silane in reaction cavity, silicon nitride is bombarded using plasma microwave source.
For solar cell semi-finished product (such as PERC battery) in the present invention, banged if carrying out plasma before nitride deposition
Surface passivation performance can be promoted by hitting, but can destroy the oxide layer on surface simultaneously, and PID is caused to fail；But the present invention passes through
Many experiments discovery, plasma bombardment is carried out after nitride deposition, will not influence the anti-PID performance of battery.
For nitride multilayer silicon structure in the present invention, can first layer nitride deposition it is complete later with regard to carry out plasma Hong
Processing is hit, plasma bombardment processing can also be carried out after any one layer of nitride deposition is completed, preferably, in first layer
Plasma bombardment processing is carried out after the completion of nitride deposition.Such treatment effect is best.
Power, frequency and the bombardment time in plasma microwave source are to be mutually related, and under certain frequency, plasma is micro-
Wave source power is bigger, and required bombardment time is shorter.Under certain plasma microwave source frequency and power, banged there are optimal
Hit the time, the time it is too long and it is too short all can impact effect.Preferably, the power in the plasma microwave source be 100~
9000w, bombardment time are 20~500s.
As further preferred, the power in the plasma microwave source is 6400w, bombardment time 240s.
Temperature in the intracorporal temperature of reaction chamber also has critically important influence for the bombardment effect in plasma microwave source,
Preferably, the intracorporal temperature of reaction chamber is 450~600 DEG C.
As further preferred, the intracorporal temperature of reaction chamber is 500 DEG C.
Preferably, in the step b, stop being passed through silane in reaction cavity, is passed through nitrogen or under vacuum, uses
Silicon nitride is bombarded in plasma microwave source.
It can be assisted with nitrogen in the present invention or be bombarded under vacuum using plasma microwave source, but effect does not have
There have to be good under ammonia subsidiary conditions, preferably, stopping being passed through silane in reaction cavity, being passed through ammonia, use in the step b
Silicon nitride is bombarded in plasma microwave source.
Preferably, the flow of the ammonia is 500~9000sccm.
As further preferred, the flow of the ammonia is 5000sccm.
Compared with prior art, the beneficial effects of the present invention are embodied in:
Plasma bombardment is carried out in the present invention after nitride deposition, will not influence the anti-PID performance of battery, and
Effect obtained in tubular type PECVD and board-like PECVD board is almost the same, has 0.05% or more to mention PERC battery efficiency
It rises.
Specific embodiment
Embodiment 1
A method of improving silicon nitride passivation performance, comprising the following steps:
A. after nitride deposition completion, solar cell semi-finished product continue to stay in reaction cavity；
B. stop being passed through silane in reaction cavity, be passed through ammonia, silicon nitride is bombarded using plasma microwave source.
Wherein, the power in plasma microwave source is 6400w, and bombardment time 240s, the intracorporal temperature of reaction chamber is 500
DEG C, the flow of ammonia is 5000sccm.
Embodiment 2
A method of improving silicon nitride passivation performance, comprising the following steps:
A. after nitride deposition completion, solar cell semi-finished product continue to stay in reaction cavity；
B. stop being passed through silane in reaction cavity, be passed through nitrogen, silicon nitride is bombarded using plasma microwave source；
Wherein, the power in plasma microwave source is 6400w, and bombardment time 240s, the intracorporal temperature of reaction chamber is 500
DEG C, the flow of nitrogen is 5000sccm.
Embodiment 3
A method of improving silicon nitride passivation performance, comprising the following steps:
A. after nitride deposition completion, solar cell semi-finished product continue to stay in reaction cavity；
B. stop being passed through silane in reaction cavity, under vacuum condition, silicon nitride is banged using plasma microwave source
It hits；
Wherein, the power in plasma microwave source is 6400w, and bombardment time 240s, the intracorporal temperature of reaction chamber is 500
℃。
Claims (9)
1. a kind of method for improving silicon nitride passivation performance, which comprises the following steps:
A. after nitride deposition completion, solar cell semi-finished product continue to stay in reaction cavity；
B. stop being passed through silane in reaction cavity, silicon nitride is bombarded using plasma microwave source.
2. improving the method for silicon nitride passivation performance as described in claim 1, which is characterized in that the plasma microwave source
Power is 100~9000w, and bombardment time is 20~500s.
3. improving the method for silicon nitride passivation performance as claimed in claim 2, which is characterized in that the plasma microwave source
Power is 6400w, bombardment time 240s.
4. improving the method for silicon nitride passivation performance as described in claim 1, which is characterized in that the intracorporal temperature of reaction chamber
Degree is 200~800 DEG C.
5. improving the method for silicon nitride passivation performance as claimed in claim 4, which is characterized in that the intracorporal temperature of reaction chamber
Degree is 500 DEG C.
6. improving the method for silicon nitride passivation performance as described in claim 1, which is characterized in that in the step b, reaction chamber
Stop being passed through silane in vivo, is passed through nitrogen or under vacuum, silicon nitride is bombarded using plasma microwave source.
7. the method for the raising silicon nitride passivation performance as described in Claims 1 to 5 is any, which is characterized in that the step b
In, stop being passed through silane in reaction cavity, is passed through ammonia, silicon nitride is bombarded using plasma microwave source.
8. improving the method for silicon nitride passivation performance as claimed in claim 7, which is characterized in that the flow of the ammonia is
500~9000sccm.
9. improving the method for silicon nitride passivation performance as claimed in claim 8, which is characterized in that the flow of the ammonia is
5000sccm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910509923.2A CN110137312A (en) | 2019-06-13 | 2019-06-13 | A method of improving silicon nitride passivation performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910509923.2A CN110137312A (en) | 2019-06-13 | 2019-06-13 | A method of improving silicon nitride passivation performance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110137312A true CN110137312A (en) | 2019-08-16 |
Family
ID=67581466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910509923.2A Pending CN110137312A (en) | 2019-06-13 | 2019-06-13 | A method of improving silicon nitride passivation performance |
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| CN (1) | CN110137312A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2096679A1 (en) * | 2006-11-22 | 2009-09-02 | Tokyo Electron Limited | Method for manufacturing solar cell and apparatus for manufacturing solar cell |
| CN106898676A (en) * | 2017-02-06 | 2017-06-27 | 苏州润阳光伏科技有限公司 | A kind of method for repairing Interface composites state |
| CN108695408A (en) * | 2018-05-03 | 2018-10-23 | 江西展宇新能源股份有限公司 | A kind of tubular type PECVD deposited silicon nitrides laminated antireflection film technique |
| CN109545900A (en) * | 2018-12-03 | 2019-03-29 | 江苏中宇光伏科技有限公司 | A kind of passivating method of the back surface of solar battery sheet silicon wafer |
-
2019
- 2019-06-13 CN CN201910509923.2A patent/CN110137312A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2096679A1 (en) * | 2006-11-22 | 2009-09-02 | Tokyo Electron Limited | Method for manufacturing solar cell and apparatus for manufacturing solar cell |
| CN106898676A (en) * | 2017-02-06 | 2017-06-27 | 苏州润阳光伏科技有限公司 | A kind of method for repairing Interface composites state |
| CN108695408A (en) * | 2018-05-03 | 2018-10-23 | 江西展宇新能源股份有限公司 | A kind of tubular type PECVD deposited silicon nitrides laminated antireflection film technique |
| CN109545900A (en) * | 2018-12-03 | 2019-03-29 | 江苏中宇光伏科技有限公司 | A kind of passivating method of the back surface of solar battery sheet silicon wafer |
Non-Patent Citations (1)
| Title |
|---|
| 全成: "太阳能电池氮化硅薄膜制备与钝化研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190816 |