CN110133966A - Photoetching gum coating apparatus - Google Patents
Photoetching gum coating apparatus Download PDFInfo
- Publication number
- CN110133966A CN110133966A CN201910399895.3A CN201910399895A CN110133966A CN 110133966 A CN110133966 A CN 110133966A CN 201910399895 A CN201910399895 A CN 201910399895A CN 110133966 A CN110133966 A CN 110133966A
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- Prior art keywords
- chamber
- top cover
- coating apparatus
- coating
- photoetching gum
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of photoetching gum coating apparatus, including bottom of chamber seat, chamber body, chamber top cover, the bottom of chamber seat, the chamber body and the chamber top cover constitute coating chamber;It is coated with sputtering zone, is located at the chamber top cover inner wall, and the material of the coating sputtering zone is hydrophily wet material.Hydrophilic material can reduce the contact angle of liquid Yu the hydrophilic material surface, so that liquid be made to be not easy adhesion in the coating sputtering zone, increase liquid fluidity;When being coated technique, the mixing liquid that flown out due to centrifugal force is reached the coating sputtering zone and is easier to flow discharge, is avoided generating accumulation, backwash is reduced, to improve the working efficiency of the apparatus for coating.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of photoetching gum coating apparatus.
Background technique
Currently, semiconductor integrated circuit (IC) industry has gone through Exponential growth.IC material and the technology of design into
Step has produced number for IC, wherein per generation IC has smaller and more complicated circuit than prior-generation IC.In the development of IC
Cheng Zhong, functional density generally increase, and geometric dimension (minimal parts that can produce using manufacturing process) has been reduced.It removes
IC component become it is smaller it is more complicated except, the wafer for manufacturing IC on it becomes increasing, this just wants the quality of wafer
Ask higher and higher.
In the manufacturing process of wafer, need by multi-step process, such as surface clean, Primary Oxidation, chemical vapor deposition
Product plated film, chemical mechanical grinding, photoetching, annealing, ion implanting etc..Wherein, photoetching technique refers under illumination effect, by light
Cause resist (also known as photoresist) by the technology in the pattern transfer to substrate on mask plate.The coating of photoresist in photoetching process
It is to be completed in photoetching gum coating apparatus.
When carrying out photoresist spin coating in existing photoetching gum coating apparatus, the power that the wafer is generated by motor is driven
And photoresist is coated in crystal column surface and forms uniform dielectric film by high speed rotation, the centrifugal force for rotating generation.However, at present
In coating, described in the diluent (OK73) and photoresist solvent of eruption strike after being thrown away from wafer because of centrifugal force effect
On the inner wall of photoetching gum coating apparatus, wherein the mixing liquid of a part of diluent (OK73) and photoresist solvent can be with institute
State the drain line discharge of apparatus for coating bottom;And mixing liquid described in remainder can remain in the inner wall of the apparatus for coating
On, these mixing liquids remained on the apparatus for coating inner wall are accumulated, and after through drying, can generate colloidal solid
Object, these colloidal solid objects can pollute subsequent wafer, lead to graphic defects;Meanwhile the if mixing liquid piled up
It cannot remove in time, can also increase to cause to return and splash residual defects.
In the prior art, in order to avoid the inner wall that the mixing liquid is deposited in apparatus for coating, solution is periodically to tie up
It protects (PM), the chamber body of the apparatus for coating after using and chamber top cover is changed to clean chamber body or chamber top cover, to prevent to lack
Sunken generation.But this mode wasting manpower and material resources, and affect the production efficiency of photoetching gum coating apparatus.
Therefore, the production efficiency of photoetching gum coating apparatus is to be improved.
Summary of the invention
Problems solved by the invention is that existing photoetching gum coating apparatus production efficiency is low.
To solve the above problems, the present invention provides a kind of photoetching gum coating apparatus, including bottom of chamber seat, chamber body, chamber top cover, institute
It states bottom of chamber seat, the chamber body and the chamber top cover and constitutes coating chamber;The chamber top cover inner wall includes coating sputtering zone, and institute
The material for stating coating sputtering zone is hydrophily wet material.
Optionally, the chamber top cover inner wall positioned at the coating sputtering zone includes top margin and bottom edge, and the top margin surrounds
Circle, the bottom edge surround circle, and the top margin diameter is less than the bottom edge diameter, and the height of the top margin and the bottom edge
Difference is 2mm-3mm.
Optionally, by the top margin to the bottom edge, in the height direction, the diameter of the chamber top cover inner wall gradually increases
Greatly, and the chamber top cover inner wall outwardly protrudes.
Optionally, the hydrophily wet material includes metal material or high molecular material, the metal material or high score
The surface tension size of sub- material is 40mN/m to 75mN/m.
Optionally, the chamber top cover inner wall further includes blank area, and the material of the blank area is super-hydrophobic material.
Optionally, the material of the chamber body or bottom of chamber seat is super-hydrophobic material.
Optionally, the super-hydrophobic material includes metal, ceramics or high molecular material, the metal, ceramics or high score
The surface tension of sub- material is less than 35mN/m.
Optionally, the chamber is as round table-like, the cavity with impenetrating thickness.
Optionally, the angle of chamber body side and bottom surface is 15 ° -45 °.
Optionally, the chamber top cover and bottom of chamber seat surround chamber, and the chamber body is located at the chamber interior.
Optionally, the chamber top cover and bottom of chamber seat are integrally formed.
It optionally, further include drainage hole, the drainage hole is located at the chamber base bottom.
Compared with prior art, technical solution of the present invention has the advantage that
When liquid touches hydrophily wet material, hydrophily wet material has biggish affinity to water, easily attracts
Hydrone disperses around that there is a situation where backwash reductions so when the mixing liquid touches hydrophily wet material, together
When, contact area when being contacted due to the mixing liquid with hydrophily wet material is small, and slip velocity increases, and is more easier to arrange
Out, reduce accumulation, to improve the working efficiency of the apparatus for coating.
Detailed description of the invention
Fig. 1 is the disassemblying structure schematic diagram for the photoetching gum coating apparatus that one embodiment of the invention provides;
Fig. 2 is the sectional view in Fig. 1 along A-A1 tangent line;
Fig. 3 is the schematic diagram for the photoetching gum coating apparatus lumen top cover that further embodiment of this invention provides;
Fig. 4 is in Fig. 3 along the sectional view of B-B1 tangent line;
Fig. 5 is the photoetching gum coating apparatus lumen body schematic diagram that further embodiment of this invention provides;
Fig. 6 is in Fig. 5 along the sectional view of C-C1 tangent line.
Specific embodiment
It can be seen from background technology that for used apparatus for coating in photoresist spin coating process, inner wall is easy accumulation light at present
Photoresist mixing liquid, the photoresist mixing liquid accumulated can pollute wafer, lead to graphic defects;Meanwhile the institute piled up
Stating mixing liquid can also cause to return to splash defect.So needing to carry out periodic maintenance cleaning to the apparatus for coating, to prevent wafer
Defect is generated in photoresist spin coating process.But this mode wasting manpower and material resources, it greatly affected photoresist painting and arrange
The production efficiency set.
It has been investigated that the liquid gushed out is diluent (OK73) and photoetching when carrying out photoresist spin coating proceeding
The mixing liquid of peptizing agent, the mixing liquid are characterized with hydrophobicity;And after the mixing liquid is thrown away, it can generally impinge upon
Described some fixed area of apparatus for coating inner wall, this region is generally all in the coating sputtering zone of the apparatus for coating chamber top cover.
The chamber top cover inner wall material in the apparatus for coating in technology is generally hydrophobicity characterization or characterizes for other non-hydrophilics at present
Common material, without the function of inhibiting remaining mixing liquid accumulation on inner wall.
To solve the above problems, the present invention provides a kind of photoetching gum coating apparatus, including bottom of chamber seat, chamber body, chamber top cover, institute
It states bottom of chamber seat, the chamber body and the chamber top cover and constitutes coating chamber;It is coated with sputtering zone, is located at the chamber top cover inner wall, and
The material of the coating sputtering zone is hydrophily wet material.Hydrophilic material can reduce liquid and the hydrophilic material table
The contact angle in face increases liquid fluidity so that liquid be made to be not easy adhesion in the coating sputtering zone;When being coated technique
When, the mixing liquid that flown out due to centrifugal force is reached the coating sputtering zone and is easier to flow discharge, is avoided generating accumulation, be reduced
Backwash, to improve the working efficiency of the apparatus for coating.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
First embodiment
Fig. 1 is the disassemblying structure schematic diagram for the photoetching gum coating apparatus that an embodiment provides.
With reference to Fig. 1, the photoetching gum coating apparatus includes bottom of chamber seat 300, chamber body 200 and chamber top cover 100, the chamber top
Lid 100 is detachably connected with the bottom of chamber seat 300;The chamber body 200 is detachably connected with the bottom of chamber seat 300.
300 bottoms of the bottom of chamber seat are circle, and by the center of circle, successively there are three annular sidewalls for tool outward, respectively first annular
Side wall 301, the second annular sidewall 302, third annular sidewall 303;The first annular side wall 301 and second annular sidewall
First annular chamber is surrounded between 302, surrounds the second ring between second annular sidewall 302 and the third annular sidewall 303
Shape chamber.The height of the first annular side wall 301 is higher than second annular sidewall 302 and the third annular sidewall 303;
The difference in height of the first annular side wall 301 and second annular sidewall 302 be greater than the first annular side wall 301 with it is described
The difference in height of third annular sidewall 303.It is used to place wafer catching device inside the first annular side wall 301.
The chamber body 200 is ring bodies, the cavity with impenetrating thickness.The inner ring of the chamber body 200 and first ring
Shape side wall 301 connects, and for the outer wall of the chamber body 200 across second annular sidewall 302, outer ring is placed in second annular side
Between wall 302 and the third annular sidewall 303.
The chamber top cover 100 is ring bodies, and the chamber top cover 100, the chamber body 200, bottom of chamber seat 300 collectively form
It is coated with chamber.Specifically, the chamber top cover 100 surrounds a chamber with the bottom of chamber seat 300, the chamber body 200 can be wrapped
It is trapped among in the chamber, it is therefore an objective to isolate a relatively independent space for photoresist coating process, when so as to coating process, more
The operational requirements such as temperature and humidity, air draft, sun pressure inside good control.The chamber top cover 100 can be divided into upper cover 101 and upper side wall
102, the upper side wall 102 connects with the third annular sidewall 303, and the height of the upper cover 101 is higher than the chamber body 200
Highly.
In other embodiments, the chamber top cover 100 is integrally formed with the bottom of chamber seat 300.
It should be noted that wafer is placed on wafer catching device, the wafer when carrying out photoresist coating process
The power generated by motor drives and high speed rotation, and photoresist is coated in crystal column surface and is formed uniformly by the centrifugal force for rotating generation
Dielectric film.In coating, the diluent (OK73) and photoresist solvent of eruption are thrown away from wafer because centrifugal force is acted on
On the inner wall for striking the photoetching gum coating apparatus afterwards, it has been investigated that, most of diluent (OK73) and photoresist solvent
Mixing liquid struck through centrifugal force the photoetching gum coating apparatus inner wall a certain region (referred to as coating sputtering zone);If
The mixing liquid is splashed to after the coating sputtering zone, will on the apparatus for coating inner wall quickly slide and arranged
Out, then can largely reduce backwash defect described in background content.
Fig. 2 is sectional view of the chamber top cover 100 described in Fig. 1 along A-A1 tangent line.
It is coating sputtering zone 100a in a certain range in 100 inner wall of chamber top cover with reference to Fig. 2, it should be noted that
In actual process, when due to carrying out photoresist coating process, motor rotary speed is different, and the centrifugal force of generation is different, sputters position meeting
Different, sputtering is general in a certain range, and in the present embodiment, the coating sputtering zone 100a is the interior of the upper cover 101
Wall surface, then the blank area inner wall surface (not shown) for the upper side wall 102.
In other embodiments, the coating sputtering zone 100a is the internal partial wall surface of the upper cover 101, then the sky
White area is the inner wall surface of the 101 remainder surface of upper cover and the upper side wall 102.
In the present embodiment, the material of the coating sputtering zone 100a is hydrophily wet material.Through studying it is found that the parent
For the surface contact angle of aqueous wet material between 10 ° to 90 °, liquid, which touches hydrophily wet material, has biggish parent to water
And ability, hydrone can be attracted, or be easily soluble in water, the active force between material and water is greater than the active force between moisture,
It can be readily wetted by water, claiming this material is hydrophilic material.When liquid touches hydrophily wet material, it is possible to reduce around
It scatters, backwash situation reduces.And the contact angle when the mixing liquid touches hydrophilic material surface is smaller, slides speed
Degree will increase.When carrying out photoresist spin coating proceeding, mixing liquid coating since centrifugal force is sputtered onto is gushed out
When the 100a of sputtering zone, since the coating sputtering zone 100a is hydrophily wet material, so the mixing liquid and the painting
When cloth sputtering zone 100a is in contact, four scattered backwash situations reduce, and slip velocity increases, and are easily drained, to improve the coating
The working efficiency of device.
It should be noted that the upper cover 101 can may be multilayered structure for single layer structure, when the upper cover 101
When for single layer structure, the material of layer is hydrophily wet material, i.e., the material of the described upper cover 101 where the coating sputtering zone 100a
Material is hydrophilic material;When the upper cover 101 is multilayered structure, the material of layer is hydrophilic where the coating sputtering zone 100a
Property wet material, i.e., in the described upper cover 101, in addition to layer is hydrophily wet material where the coating sputtering zone 100a, other
Layer material is unrestricted.
In the present embodiment, the material of the coating sputtering zone 100a is metal, specially aluminium or titanium, the aluminium or titanium surface
Tension is 40mN/m to 75mN/m, and when the mixing liquid sputters at the aluminium or titanium surface, slip velocity is fast, the row of being easy
Out;The chamber top cover 100 of the coating sputtering zone 100a passes through casting or forging or 3D printing molding.
In other embodiments, the material of the coating sputtering zone 100a is obtained by high molecular material through turning property of material, is made
Its surface tension reaches 40mN/m between 75mN/m, being specifically as follows polytetrafluoroethylene (PTFE) (PTFE) or Kynoar (PVDF)
Equal high molecular materials are obtained by turning property of nanotechnology.Processing technology is thermoplastics processing technique.Such as extrusion molding, injection molding,
Casting, molding and transfer modling etc..
Second embodiment
In the present embodiment, the construction of the photoetching gum coating apparatus is identical with first embodiment, is all by bottom of chamber seat, chamber
Body and chamber top cover are constituted, and bottom of chamber seat, the chamber body and the chamber top cover constitute coating chamber.The present embodiment and
The difference of one embodiment is that the shape of the chamber top cover and the chamber body or material are different, describes in detail below.
Fig. 3 is the schematic diagram for the photoetching gum coating apparatus lumen top cover 100 that another embodiment provides, and Fig. 4 is in Fig. 3 along B-
The sectional view of B1 tangent line.
With reference to Fig. 3 and Fig. 4, in the present embodiment, the upper cover 101 is single layer structure.Positioned at the coating sputtering zone 100a
100 inner wall of chamber top cover include top margin 110 and bottom edge 120, i.e., the described upper cover 101 includes top margin 110 and bottom edge 120, institute
It states the top that top margin 110 is the coating sputtering zone 100a and is cut gained, the top along perpendicular to the section phase on axis direction
Side 110 surrounds circle, and the bottom edge 120 is the bottom of the coating sputtering zone 100a by along perpendicular to the section on axis direction
Phase cuts gained, and the bottom edge 120 surrounds circle, and 110 diameter of top margin is less than the bottom edge 120;The top margin 110 with it is described
The height difference H 1 on bottom edge 120 is 2mm-3mm.It is unfavorable when the top margin 110 and the height difference H 1 on the bottom edge 120 are less than 2mm
To lower landing after mixing liquid sputtering, it is extremely difficult to reduce the effect of accumulation and backwash;And in actual use, institute
When stating height difference H 1 more than 3mm, the mixing liquid sputter at it is described coating sputtering zone 100a after backwash angle be difficult to control,
It is unfavorable for the landing and discharge of the mixing liquid.
In the present embodiment, by the top margin 110 to the bottom edge 120, in the height direction, 100 inner wall of chamber top cover
Diameter be gradually increased, and be located at the coating sputtering zone 100a described in 100 inner wall of chamber top cover outwardly protrude (the i.e. described chamber top cover
100 inner wall shapes are similar to the shape of the bowl of a back-off).The coating sputtering zone 100a is cambered surface, and the mixing liquid is hit
When hitting the coating sputtering zone 100a, change backwash track, after the mixing liquid is splashed to the coating sputtering zone 100a, no
The effect for reducing backwash can be played on backwash to wafer, and after cambered surface is contacted with the mixing liquid, it is easier to slide, guarantor
Hinder 100 cleaning inside of chamber top cover.
In other embodiments, the circumferential diameter of 100 inner wall of chamber top cover increases, so that the coating sputtering zone 100a
It is relatively distant from center, when so that sputtering at the coating sputtering zone 100a due to the mixing liquid that centrifugal force flies out, kinetic energy
It reduces, to reduce backwash, further increases the working efficiency of the apparatus for coating.
In the present embodiment, in the chamber top cover 100, the material of the non-coating sputtering zone 100a is super-hydrophobic material,
The material of the i.e. described upper side wall 102 is super-hydrophobic material.Super hydrophobic material surface-stable contact angle is greater than 150 °, is in rolling contact
Angle can be realized hydrophobic and oleophobic function less than 10 °, while have self-cleaning function, contact the mixing liquid on its surface
Area substantially reduces, and forms the flowing of droplet formula, when the mixing liquid in the coating sputtering zone 100a slides, until on described
When 102 position of side wall, the mixing liquid is more easier to be discharged, and can ensure the cleaning of 100 inner wall of chamber top cover, can
To reduce the cost of manual maintenance, the working efficiency of the photoetching gum coating apparatus is also improved.
In the present embodiment, the super-hydrophobic material includes metal, ceramics or high molecular material.Metal, ceramics or high score
Son all can get ultra-hydrophobicity by centainly handling, and the specific ultra-hydrophobicity that obtains needs to reach its surface tension to have to
It asks.For example, for metal, itself does not have superhydrophobic characteristic, the metal surface can be made by corrosion etching
It is coarse, then surface tension is reduced by fluorination treatment, so that it may the contact angle greater than 150 degree is obtained, to become super-hydrophobic
Material.In comparison, high molecular surface can be usually all very low, it is easier to become super hydrophobic material, such as polytetrafluoroethylene (PTFE), only
Make the ptfe surface is coarse to reache a certain level, so that it may so that its surface tension reaches requirement, to have
Super hydrophobic material performance.
In the present embodiment, the surface tension of the metal, ceramics or high molecular material is less than 35mN/m, when the metal,
Ceramics or high molecular material surface tension be less than 35mN/m when, the mixing liquid its surface slip velocity faster.Tool
Polyhexafluoropropylene material can be used in body, and the surface tension of the polyhexafluoropropylene material is 16mN/m;It can also use poly- complete
Fluoro ethyl propene, the surface tension of the perfluoroethylene-propylene are 18mN/m-22mN/m.
Fig. 5 is the photoetching gum coating apparatus lumen body schematic diagram that further embodiment of this invention provides.Fig. 6 is in Fig. 5 along C-
The sectional view of C1 tangent line.
With reference to Fig. 5 and Fig. 6, in the present embodiment, the chamber body 200 is round table-like, the cavity with impenetrating thickness, the chamber
The angle of 200 side of body and bottom surface is 15 ° -45 °.Since when carrying out photoresist coating process, the mixing liquid can be fallen
In the outer surface of the side 201, when the side is clinoplain, conducive to the landing of liquid.
In the present embodiment, the angle theta of the side 201 and horizontal plane is 15 ° -45 °, and the angle theta is bigger, is more conducive to liquid
The landing of body.Since the angle theta is limited by entire apparatus for coating structure, the angle theta is no more than 45 °, when more than 45 °
When, the performance of the apparatus for coating can not ensure;When the angle theta is less than 15 °, mobility of the liquid on the side is just
Can be very poor, cause the mixing liquid to accumulate on the side 201.
In the present embodiment, the material of the chamber body 200 is super hydrophobic material.Super hydrophobic material surface-stable contact angle is greater than
150 °, angle is in rolling contact less than 10 °, be can be realized hydrophobic and oleophobic function, while there is self-cleaning function, is made the mixing liquid
Substantially reduce in 200 contact surface area of chamber body, forms the flowing of droplet formula, can ensure that 200 surface of chamber body is clean
Cleaning, it is possible to reduce the cost of manual maintenance also improves the working efficiency of the photoetching gum coating apparatus.
In the present embodiment, the material of the chamber body 200 is metal, ceramics or high molecular material.With it is previously described super thin
The material of water characteristic is the same, can use nanotechnology to realize turning property, makes it have superhydrophobic characteristic.
It continues to refer to figure 1, in the present embodiment, the material of bottom of chamber seat 300 is super-hydrophobic material, and hereinbefore super thin
Water-based material effect is the same, when the mixing liquid slides to 300 inside of bottom of chamber seat, utilizes the property of super-hydrophobic material
Can, so that the mixing liquid is more preferable in the mobility of the bottom of chamber seat 300;There is draining inside the photoetching gum coating apparatus
Hole (not shown), the drainage hole is located at 300 bottoms of the bottom of chamber seat, specifically, being located at second annular sidewall 302 and institute
It states between third annular sidewall 303, for through the circular hole of the bottom of chamber seat 300;When the mixed liquor on 200 surface of chamber body
The mixing liquid of body and 100 inner wall of chamber top cover slides to the chamber base bottom, it is easier to as the drainage hole is arranged
Out, the photoetching gum coating apparatus neat and tidy has been ensured.
The photoetching gum coating apparatus can effectively inhibit residual photoresist on inner wall automatically and prevent the remnants
Periodic maintenance expense is saved in the wall built-up of photoresist and accumulation, while playing the role of reducing backwash, is avoided backwash defect, is mentioned
The high working efficiency of the photoetching gum coating apparatus.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of photoetching gum coating apparatus characterized by comprising
Bottom of chamber seat, chamber body, chamber top cover, the bottom of chamber seat, the chamber body and the chamber top cover constitute coating chamber;
The chamber top cover inner wall includes coating sputtering zone, and the material of the coating sputtering zone is hydrophily wet material.
2. photoetching gum coating apparatus as described in claim 1, which is characterized in that the chamber top cover positioned at the coating sputtering zone
Inner wall includes top margin and bottom edge, and the top margin surrounds circle, and the bottom edge surrounds circle, and the top margin diameter is less than the bottom edge
Diameter, and the difference in height on the top margin and the bottom edge is 2mm-3mm.
3. photoetching gum coating apparatus as claimed in claim 2, which is characterized in that by the top margin to the bottom edge, along height side
Upwards, the diameter of the chamber top cover inner wall is gradually increased, and the chamber top cover inner wall outwardly protrudes.
4. photoetching gum coating apparatus as described in claim 1, which is characterized in that the hydrophily wet material includes metal material
Or high molecular material, the surface tension size of the metal material or high molecular material are 40mN/m to 75mN/m.
5. photoetching gum coating apparatus as described in claim 1, which is characterized in that the chamber top cover inner wall further includes blank area, institute
The material for stating blank area is super-hydrophobic material.
6. photoetching gum coating apparatus as described in claim 1, which is characterized in that the material of the chamber body or bottom of chamber seat is super
Hydrophobic material.
7. the photoetching gum coating apparatus as described in claim 5 or 6, which is characterized in that the super-hydrophobic material includes metal, pottery
The surface tension of porcelain or high molecular material, the metal, ceramics or high molecular material is less than 35mN/m.
8. photoetching gum coating apparatus as described in claim 1, which is characterized in that the chamber has impenetrating thickness as round table-like
Cavity.
9. photoetching gum coating apparatus as claimed in claim 8, which is characterized in that the angle of chamber body side and bottom surface is 15 °-
45°。
10. photoetching gum coating apparatus as described in claim 1, which is characterized in that the chamber top cover and bottom of chamber seat surround chamber
Room, the chamber body are located at the chamber interior.
11. photoetching gum coating apparatus as described in claim 1, which is characterized in that the chamber top cover and bottom of chamber seat one at
Type.
12. photoetching gum coating apparatus as described in claim 1, which is characterized in that further include drainage hole, the drainage hole is located at institute
State chamber base bottom.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910399895.3A CN110133966A (en) | 2019-05-14 | 2019-05-14 | Photoetching gum coating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910399895.3A CN110133966A (en) | 2019-05-14 | 2019-05-14 | Photoetching gum coating apparatus |
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CN110133966A true CN110133966A (en) | 2019-08-16 |
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ID=67573869
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Application Number | Title | Priority Date | Filing Date |
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CN201910399895.3A Pending CN110133966A (en) | 2019-05-14 | 2019-05-14 | Photoetching gum coating apparatus |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384021A (en) * | 1991-10-11 | 1995-01-24 | The Boc Group Plc | Sputtering apparatus |
CN104979238A (en) * | 2014-04-14 | 2015-10-14 | 沈阳芯源微电子设备有限公司 | Anti-splash and anti-adhesion type process cavity of TRACK machine glue evening unit |
CN208126101U (en) * | 2018-05-10 | 2018-11-20 | 德淮半导体有限公司 | Photoetching gum coating apparatus |
-
2019
- 2019-05-14 CN CN201910399895.3A patent/CN110133966A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384021A (en) * | 1991-10-11 | 1995-01-24 | The Boc Group Plc | Sputtering apparatus |
CN104979238A (en) * | 2014-04-14 | 2015-10-14 | 沈阳芯源微电子设备有限公司 | Anti-splash and anti-adhesion type process cavity of TRACK machine glue evening unit |
CN208126101U (en) * | 2018-05-10 | 2018-11-20 | 德淮半导体有限公司 | Photoetching gum coating apparatus |
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Application publication date: 20190816 |