CN110129757B - Sample wafer replacing device of magnetron sputtering reaction equipment - Google Patents
Sample wafer replacing device of magnetron sputtering reaction equipment Download PDFInfo
- Publication number
- CN110129757B CN110129757B CN201910531719.0A CN201910531719A CN110129757B CN 110129757 B CN110129757 B CN 110129757B CN 201910531719 A CN201910531719 A CN 201910531719A CN 110129757 B CN110129757 B CN 110129757B
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- sample
- long rod
- electromagnet
- base
- stock
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 2
- 230000007306 turnover Effects 0.000 claims 1
- 238000005070 sampling Methods 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000003749 cleanliness Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a sample changing device of magnetron sputtering reaction equipment, which comprises a sampling long rod, a cylinder, a sample base and a long rod end part arranged at the front part of the sampling long rod, wherein the long rod end part comprises a long rod end head, an electromagnet, a telescopic mechanism and a micro switch, the electromagnet, the telescopic mechanism and the micro switch are arranged in the cylinder, the electromagnet is arranged at the rear part of the long rod end head, the telescopic mechanism is arranged at the rear part of the electromagnet, the tail end of the telescopic mechanism is in telescopic contact with the micro switch, the sample base comprises a tail end provided with a concave opening, and the long rod end head enters and exits at the concave opening of the tail end. The invention uses the magnet attraction to realize sampling, uses the spring and the micro switch to realize automatic release of the long rod, shortens the carrying time, avoids the sample wafer from being damaged in the carrying process, improves the production efficiency and the yield, is beneficial to improving the tightness of the whole equipment and ensures the cleanliness of the process environment.
Description
Technical Field
The invention relates to the field of vacuum coating, in particular to a sample changing device of magnetron sputtering reaction equipment.
Background
The magnetron sputtering equipment is an experimental instrument for vacuum coating by using a physical vapor deposition method, and the ionized ions bombard a target material, and sputtered target material atoms are deposited on a substrate to prepare films of various materials such as metal films, semiconductor films, high polymer films and the like.
When magnetron sputtering coating is performed, after equipment enters a vacuum state, the vacuum degree of a vacuum chamber is required to be constant and the air supply amount is required to be stable in order to ensure the stability of the process. The invention is used for realizing the transfer of the sample wafer between the sputtering coating main chamber and the auxiliary chamber and the taking and placing of the sample wafer on the sample wafer frame.
As shown in FIG. 1, at the front end of a sampling rod of the prior device, the sampling sheet is matched with the sampling rod in an L structure to realize sampling sheet taking and placing, because the sampling rod is longer and the matching interface is smaller, and the visible window is small, the successful matching between the sampling sheet and the sampling rod can be realized only by higher accuracy and multiple visual adjustment, and the matching is not firm, so that the situation of sliding of the sampling sheet is easy to occur. The time consumption is long, and sample wafer damage is easy to cause.
Disclosure of Invention
The invention aims at overcoming the defects of the prior art, and provides a sample wafer replacing device of magnetron sputtering reaction equipment, which can shorten the carrying time and avoid damaging the sample wafer in the carrying process.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the utility model provides a magnetron sputtering reaction equipment trades appearance piece device, includes the sample stock, the device still includes drum, appearance piece base and locates the stock tip in sample stock front portion, stock tip includes stock end, electro-magnet, telescopic machanism and micro-gap switch locate in the drum, the rear of stock end is located to the electro-magnet, telescopic machanism has been installed at the electro-magnet rear, telescopic machanism's tail end flexible contact micro-gap switch, appearance piece base is including the tail end that is equipped with the sunk mouth, the stock end is in and out at the sunk mouth of tail end.
Further, telescopic machanism includes little pole, screens ring, spring, the central authorities in electro-magnet rear are equipped with the chamber that holds that supplies little pole tip to stretch into, the spring housing is established outside the little pole, the front end of spring is fixed at the electro-magnet rear, the rear end and the contact block of spring are fixed, screens ring is fixed on the drum inner wall, when stock end and electro-magnet backward movement, contact block and micro-gap switch contact.
Further, the long rod end is in a round table shape, and the concave opening of the sample wafer base is a round table-shaped concave opening matched with the long rod end.
Further, an electromagnet base is fixed at the rear of the electromagnet.
Further, a sample placing area is arranged in the middle of the sample base.
Further, the sample placing area is a magnetron sputtering substrate which is concave into a round shape.
Further, the front part of the micro switch is provided with a contact piece, and the tail end of the telescopic mechanism is contacted with the contact piece in a telescopic manner.
Further, the micro switch is mounted on the switch base.
Further, the sample wafer base is sheet-shaped.
Further, the front end of the base of the sample wafer base is a rectangular bulge.
By adopting the technical scheme of the invention, the beneficial effects of the invention are as follows: compared with the prior art, the invention uses the magnet attraction to realize sampling, uses the spring and the micro switch to realize automatic removal of the long rod, shortens the carrying time, avoids the sample wafer from being damaged in the carrying process, improves the production efficiency and the yield, is beneficial to improving the tightness of the whole equipment and ensures the cleanliness of the process environment.
Drawings
FIG. 1 is a block diagram of the front end of a conventional sampling wand as indicated in the background;
FIG. 2 is a front part structure diagram of a long rod of a sample exchange plate device of a magnetron sputtering reaction device provided by the invention;
FIG. 3 is a perspective view of the front part of a long rod of a sample exchange plate device of a magnetron sputtering reaction device provided by the invention;
FIG. 4 is a diagram of a sample wafer base of a sample wafer device of a magnetron sputtering reaction apparatus according to the present invention;
fig. 5 is a schematic diagram of the application of a sample-changing device of a magnetron sputtering reaction device.
The device comprises a long rod end, an electromagnet, a cylinder, a micro switch, a contact piece, a contact block, a switch base, a base tail, a sample wafer base, a magnetron sputtering base, a 15 round table-shaped concave opening, a 16 round table-shaped concave opening, a base front end, a 17 round table-shaped sample wafer frame, a 18 round table-shaped sample wafer frame, a main cavity, a 19 round table-shaped sample wafer frame, a 20 round table-shaped sample wafer frame, a 21 round table-shaped sample wafer frame, a sampling long rod, a 22 round table-shaped sample wafer frame, a secondary cavity, a 23 round table-shaped sample wafer frame and a long rod shell, wherein the end of the long rod is 1, the end of the long rod, the electromagnet, the 3 round electromagnet, the base, the 4 round table-shaped sample wafer frame, the small rod, the 5 round clamping ring, the spring, the 7 round cylinder, the 8 round table-shaped sample wafer frame and the long rod.
Detailed Description
Specific embodiments of the present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, the front end of a conventional sampling long rod 21 is cylindrical 7, two L-shaped rails are provided on both sides of the cylinder 7, and the short ends of the two L-shaped rails are positioned in the same clockwise direction. When the sample is taken and placed, the height of the sample frame is adjusted to enable the two small short rods at the tail end of the sample base 13 to be aligned with the L-shaped track groove, and the long rods are rotated after the sample enters the bottom end of the L-shaped long track along the track to enable the small short rods to enter the L-shaped short track. The matching method has short service life, is not easy to operate, and is unstable in matching, and the situation that a sample is taken when the long rod is pulled out or the sample is dropped when the sample is transferred often occurs.
As shown in fig. 2-4, a magnetron sputtering reaction equipment sample-changing device comprises a sampling long rod 21, the device further comprises a cylinder 7, a sample-changing base 13 and a long rod end part arranged at the front part of the sampling long rod 21, the long rod end part comprises a long rod end head 1, an electromagnet 2, a telescopic mechanism and a micro switch 8, the electromagnet 2, the telescopic mechanism and the micro switch 8 are arranged in the cylinder 7, the electromagnet 2 is arranged at the rear part of the long rod end head 1, the telescopic mechanism is arranged at the rear part of the electromagnet 2, the tail end of the telescopic mechanism is in telescopic contact with the micro switch 8, and the electromagnet base 3 is fixed at the rear part of the electromagnet 2. The end of the long rod is firmly abutted against the sample wafer substrate under the action of the electromagnet 2.
The sample wafer base 13 comprises a tail end provided with a concave opening, and the long rod end 1 enters and exits from the concave opening at the tail end. The sample wafer base 13 is sheet-shaped. The front base end 16 of the sample base 13 is a rectangular protrusion, as shown in fig. 4.
The telescopic mechanism comprises a small rod 4, a clamping circular ring 5 and a spring 6, wherein an accommodating cavity for the end part of the small rod 4 to extend in is formed in the center of the rear of the electromagnet 2, the spring 6 is sleeved outside the small rod 4, the front end of the spring 6 is fixed at the rear of the electromagnet 2, the rear end of the spring 6 is fixed with a contact block 10, the clamping circular ring 5 is fixed on the inner wall of a cylinder 7, and when the long rod end head 1 and the electromagnet 2 move backwards, the contact block 10 is in contact with a micro switch 8.
The long rod end 1 is in a round table shape, and the concave opening of the sample wafer base 13 is a round table-shaped concave opening 15 matched with the long rod end 1. Namely, the end head 1 of the long rod can go deep into the concave opening, and the two platform surfaces want to be propped against each other, so that the contact is stable and the sliding is not easy.
The middle part of the sample wafer base 13 is provided with a sample wafer placing area. The sample placement area is a magnetron sputtering substrate 14 recessed into a circular shape.
The front part of the microswitch 8 is provided with a contact piece 9, and the tail end of the telescopic mechanism is contacted with the contact piece 9 in a telescopic way. The microswitch 8 is mounted on a switch base 11.
When the electromagnet 2 of the device works, the end head 1 of the long rod attracts the tail 12 of the base, and a sample wafer is kept in a working state in the process of being put into a sample wafer frame; the sample accurately enters the sample rack track until reaching the designated position until the sampling long rod 21 cannot continue to advance, the electromagnet 2 is powered off and is non-magnetic, the sampling long rod 21 is separated from the tail 12 of the sample rack base 13, the long rod is withdrawn, and the sample still remains in the sample rack.
As shown in fig. 5, reference numeral 19 denotes a sample wafer and a sample wafer base, and 23 denotes a long rod housing. The application process of the device of the invention is as follows:
in the initial state, the electromagnet 2 is not energized and is in a non-magnetic state.
During the process of taking out the sample from the first sample rack 17 or the second sample rack 20, the working state of the long rod end part and the sampling base are as follows:
the electromagnet 2 is not electrified and is in a non-working state, and when sampling is carried out, the long rod end head 1 is aligned with the round table-shaped concave opening 15 of the sample wafer base 13 and roughly matched.
The contact sheet 9 is moved backwards, the micro switch 8 is pressed down to open a circuit, the electromagnet 2 works to generate attractive force to the tail part of the sample wafer base 13, and the long rod end head 1 is tightly matched with the sample wafer base 13.
The long rod is retracted, the sample wafer base 13 and the long rod are in a fixed state without relative movement, and the sample wafer substrate is pulled out of the sample wafer rack, so that the substrate is taken out.
In the process of transferring the sample wafer, the working state of the long rod end part and the sampling base is as follows:
when the electromagnet 2 works and the long rod end 1 attracts the tail 12 of the base, and a sample is placed in the first sample rack 17 or the second sample rack 20, or the sample is transferred in the main cavity 18 and the auxiliary cavity 22, the electromagnet 2 keeps a working state, and the sampling long rod 21 is tightly matched with the sample base 13 without relative movement.
In the process of placing the sample wafer base 13 into the sample wafer rack, the working state of the long rod end part and the sampling base is as follows:
the electromagnet 2 is in a working state, the sample wafer base 13 is adsorbed on the end head 1 of the long rod, the height of the sample wafer rack is adjusted, and the long rod is pushed forward to enable the sample wafer to accurately enter the sample wafer rack track.
The sample wafer base 13 enters the sample wafer rack track and continues to advance, the front end of the sample wafer base 13 is resisted against the sample wafer rack, the sample wafer base 13 which is connected with the electromagnet 2 and can move in the horizontal direction moves backwards with the small rod 4, the spring 6 compresses, the small rod 4 connected with the electromagnet base 3 moves backwards for a small distance under the acting force transmitted to the base by the sample wafer rack and the acting force of the spring 6, after the contact block 10 contacts the contact piece 9 of the micro switch 8, the circuit connected with the electromagnet 2 is closed and is not electrified, the electromagnet 2 loses magnetism, the long rod end 1 is disconnected with the sample wafer base 13, and the clamping ring 5 of the cylinder 7 contacted with the electromagnet base 3 cannot continue to advance.
And (5) withdrawing the long rod, and stably leaving the sample on the sample rack, wherein the long rod is withdrawn.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (8)
1. The utility model provides a magnetron sputtering reaction equipment trades sample piece device, includes the sample stock, its characterized in that, the device still includes drum, sample piece base and locates the stock tip in sample stock front portion, stock tip includes stock end, electro-magnet, telescopic machanism and micro-gap switch locate in the drum, the rear of stock end is located to the electro-magnet, telescopic machanism has been installed at the electro-magnet rear, telescopic machanism's tail end flexible contact micro-gap switch, sample piece base is including the tail end that is equipped with the sunk mouth, the stock end business turn over at the sunk mouth of tail end;
the telescopic mechanism comprises a small rod, a clamping circular ring and a spring, wherein an accommodating cavity for the end part of the small rod to extend in is formed in the center of the rear of the electromagnet, the spring is sleeved outside the small rod, the front end of the spring is fixed behind the electromagnet, the rear end of the spring is fixed with a contact block, the clamping circular ring is fixed on the inner wall of the cylinder, and when the end part of the long rod and the electromagnet move backwards, the contact block is contacted with the micro switch;
the long rod end is in a round table shape, and the concave opening of the sample wafer base is a round table-shaped concave opening matched with the long rod end.
2. A magnetron sputter reactor apparatus as defined in claim 1 wherein an electromagnet base is fixed behind said electromagnet.
3. A magnetron sputter reactor equipment wafer changer as recited in claim 1 wherein a wafer placement area is provided in the middle of the wafer pedestal.
4. A magnetron sputter reactor apparatus as defined in claim 3 wherein the sample placement area is a magnetron sputter substrate recessed into a circular shape.
5. The magnetron sputtering reaction equipment sample exchange device according to claim 1, wherein a contact piece is arranged at the front part of the micro switch, and the tail end of the telescopic mechanism is in telescopic contact with the contact piece.
6. A magnetron sputter reactor equipment changer as recited in claim 1 wherein the micro-switch is mounted on a switch base.
7. A magnetron sputter reactor apparatus as defined in claim 1 wherein said wafer pedestal is sheet-like.
8. The magnetron sputtering reaction equipment sample exchange device according to claim 1, wherein the front end of the sample base is a rectangular protrusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910531719.0A CN110129757B (en) | 2019-06-19 | 2019-06-19 | Sample wafer replacing device of magnetron sputtering reaction equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910531719.0A CN110129757B (en) | 2019-06-19 | 2019-06-19 | Sample wafer replacing device of magnetron sputtering reaction equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110129757A CN110129757A (en) | 2019-08-16 |
| CN110129757B true CN110129757B (en) | 2023-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910531719.0A Active CN110129757B (en) | 2019-06-19 | 2019-06-19 | Sample wafer replacing device of magnetron sputtering reaction equipment |
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| Country | Link |
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| CN (1) | CN110129757B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129758B (en) * | 2019-06-19 | 2024-02-09 | 浙江工业大学 | Hook type sample replacing device of magnetron sputtering reaction equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2579238A1 (en) * | 2006-05-26 | 2007-11-26 | Debien Products, Inc. | Quick connect coupling assembly |
| CN101740942A (en) * | 2008-11-14 | 2010-06-16 | 贵州航天电器股份有限公司 | Miniature circular electromagnetic separation electric connector |
| CN103817800A (en) * | 2014-02-27 | 2014-05-28 | 中联重科股份有限公司 | Automatic locking device and mixer applying same |
| CN206339169U (en) * | 2016-12-29 | 2017-07-18 | 歌尔科技有限公司 | A kind of accurate mechanism for testing of go-no go gauge |
-
2019
- 2019-06-19 CN CN201910531719.0A patent/CN110129757B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2579238A1 (en) * | 2006-05-26 | 2007-11-26 | Debien Products, Inc. | Quick connect coupling assembly |
| CN101740942A (en) * | 2008-11-14 | 2010-06-16 | 贵州航天电器股份有限公司 | Miniature circular electromagnetic separation electric connector |
| CN103817800A (en) * | 2014-02-27 | 2014-05-28 | 中联重科股份有限公司 | Automatic locking device and mixer applying same |
| CN206339169U (en) * | 2016-12-29 | 2017-07-18 | 歌尔科技有限公司 | A kind of accurate mechanism for testing of go-no go gauge |
Non-Patent Citations (1)
| Title |
|---|
| 磁控溅射制备纳米厚度连续金膜;易泰民;邢丕峰;郑凤成;谢军;李朝阳;杨蒙生;;原子能科学技术(04);全文 * |
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| Publication number | Publication date |
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| CN110129757A (en) | 2019-08-16 |
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