CN110128821A - A kind of high thermal conductivity low-k bismaleimide-triazine resin and preparation method thereof - Google Patents

A kind of high thermal conductivity low-k bismaleimide-triazine resin and preparation method thereof Download PDF

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CN110128821A
CN110128821A CN201910400870.0A CN201910400870A CN110128821A CN 110128821 A CN110128821 A CN 110128821A CN 201910400870 A CN201910400870 A CN 201910400870A CN 110128821 A CN110128821 A CN 110128821A
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resin
bismaleimide
boron nitride
thermal conductivity
nitride nanosheet
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CN110128821B (en
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赵春宝
徐随春
赵玮
陈和祥
张君
秦玉芳
秋珊珊
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Nanjing College of Information Technology
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
    • C08K2003/382Boron-containing compounds and nitrogen
    • C08K2003/385Binary compounds of nitrogen with boron
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00Properties
    • C08L2201/08Stabilised against heat, light or radiation or oxydation

Abstract

The present invention relates to a kind of high thermal conductivity low-k bismaleimide-triazine resins and preparation method thereof, its matrix resin is the copolymer of three kinds of cyanate ester resin, bismaleimide and epoxy resin components, it is in terms of 100 by the quality of matrix resin, the bismaleimide-triazine resin composite material includes 5~30 heat filling and 2~7.5 polyhedral oligomeric silsesquioxane (abbreviation POSS).The heat filling is boron nitride nanosheet.After the present invention is mixed heat filling, POSS with matrix resin by fusion method, polymer matrix composites are obtained through prepolymerization, moulding by casting solidification, obtained bismaleimide-triazine resin composite material has excellent heating conduction, while also having lower dielectric constant and excellent thermal stability.

Description

A kind of high thermal conductivity low-k bismaleimide-triazine resin and its preparation Method
Technical field
The present invention relates to a kind of heat-conductive composite material, especially a kind of boron nitride nanosheet and polyhedral oligomeric silsesquioxane The high thermal conductivity low-k bismaleimide-triazine resin composite material that alkane (abbreviation POSS) is modified jointly.
Background technique
Bismaleimide-triazine resin (abbreviation BT resin) is used as a kind of high-performance thermosetting resin, and solidfied material is same When high-fire resistance, the good mechanical property of environment resistant and cyanate ester resin, low hydroscopicity, low Jie with bismaleimide The excellent properties such as electric constant are widely used in the fields such as spacecraft material, printed circuit board and semiconductor packages.Mesh Before, in microelectronics Packaging field, BT resin has become one of the important basis material of high-speed chip encapsulation.But BT resin is low Thermal conductivity characteristics have been difficult to meet the requirement of current High Speed ICs product, restrict it to a certain extent and broadly answer in encapsulation field With.Therefore, exploitation has high thermal conductivity, the BT resin composite materials of low-k have become future microelectronics industry and further send out One of key technology of exhibition.
Currently, the effective easy method of preparation high thermal conductivity low dielectric constant polymer based composites is in polymeric matrix Middle introducing heat-conductive insulation filling, prepares filled-type thermally conductive dielectric composite material.In recent years, the ceramic-like with higher heat-conductivity was filled out Material (such as: aluminium nitride, boron nitride, silicon carbide) is widely used in preparing the thermally conductive dielectric composite material of polymer matrix.Zeng X etc. (Zeng X,Yu S,Sun R.Journal of Applied Polymer Science,2013,128(3):1353-1359.) BT resin has been carried out using hexagonal boron nitride (h-BN) it is filling-modified, research find when be added resin matrix quality 50%h- When BN, the thermal conductivity of composite material reaches 1.11W/m.K, but the dielectric constant of material rises to 4.5.(the Xia J, Li such as Xia J J,Zhang G et al.Composites Part A:Applied Science and Manufacturing,2016,80: It will 21-27.) load Al2O3Polyimides (PI) composite fibre (Al of nano particle2O3@PI) introduce BT resin prepare it is thermally conductive multiple Condensation material.The result shows that working as Al2O3Content when increasing to 14.95wt% by 5.34wt%, the dielectric of gained composite material is normal Number rises to 3.50 from 3.38.Work as Al2O3When content reaches 14.95wt%, it is pure that the thermal conductivity of composite material, which is 4.86W/m.K, 2.95 times of BT resin material.It can be seen from the studies above result while the heating conduction of composite material is improved, The dielectric constant of composite material would generally be risen with the increase of heat filling content, therefore, effectively inhibit dielectric normal Several risings (or even reduction) have become one of the key for preparing filled-type high thermal conductivity low dielectric constant composite.
Summary of the invention
It is poor it is an object of the invention to solve bismaleimide-triazine resin thermal conductivity of material in the prior art Problem, provide a kind of heating conduction it is excellent and have compared with low-k bismaleimide-triazine resin.
The technical solution that the present invention is taken to achieve the goals above are as follows: a kind of high thermal conductivity low-k span carrys out acyl Imines-cyanate resin, it is characterised in that: the component including following mass fraction
100 parts of matrix resin;
5~30 parts of heat filling;
2~7.5 parts of polyhedral oligomeric silsesquioxane (abbreviation POSS);
The heat filling is boron nitride nanosheet;Described matrix resin is cyanate ester resin, bismaleimide and ring The copolymer of oxygen resin.
Further, the heat filling is modified using 2,3 epoxypropyltrimethylchloride chlorides (abbreviation GTMAC) Boron nitride nanosheet, the boron nitride nanosheet are the boron nitride nanosheet of hexagonal structure.
Further, the cyanate ester resin is bisphenol A cyanate ester resin, bisphenol E-type cyanate resin, bisphenol-f type One of cyanate ester resin;The bismaleimide is 4,4 '-diphenyl methane dimaleimides, 4,4 '-diphenyl ether One of bismaleimide;The epoxy resin is bisphenol A type epoxy resin.
Further, cyanate ester resin, three kinds of components of bismaleimide and epoxy resin mass ratio be 100:(30~ 60): (20~35).
Further, the mass ratio of the boron nitride nanosheet and polyhedral oligomeric silsesquioxane be (2:3)~(15: 1)。
Further, the polyhedral oligomeric silsesquioxane is-seven isobutyl polyhedral oligomeric sesquialter silicon of aminopropyl Oxygen alkane (abbreviation API-POSS), octa-aminopropyl polyhedral oligomeric silsesquioxane (abbreviation APr-POSS) and eight aminophenyl multi-panels One of body oligomeric silsesquioxane (abbreviation APh-POSS).
The present invention also provides a kind of preparation method of high thermal conductivity low-k bismaleimide-triazine resin, packets Include following steps
S01 weighs bismaleimide, cyanate ester resin and epoxy resin, heating and melting in proportion, and is stirred until homogeneous It is transparent, obtain BT resin prepolymer.
The BT resin prepolymer is warming up to 110~120 DEG C by S02, and polyhedral oligomeric silsesquioxane and nitridation is added Boron nanometer sheet, stirring, continues to heat up, and obtains BT resin/boron nitride nanosheet/POSS compound resin.
S03 injects the compound resin in mold, is placed in vacuum drying oven, excludes bubble at 130~150 DEG C, It is then transferred in air dry oven and carries out curing process, obtain BT resin/boron nitride nanosheet/POSS composite material.
Further, the boron nitride nanosheet is modified boron nitride nanosheet, method of modifying are as follows: it is water-soluble to prepare GTMAC Liquid, the mass percent concentration of GTMAC aqueous solution are 0.1~1%;Boron nitride nanosheet powder is added in GTMAC solution Mixed solution is obtained, after stirring at room temperature, then ultrasonic disperse under the conditions of 40~50 DEG C, it is then ultrasonic under the conditions of 50~80 DEG C And mechanical stirring, products therefrom are washed with distilled water to neutrality, and filter residue is taken after being separated by filtration and is dried in vacuo, is modified Boron nitride nanosheet.
Further, boron nitride nanosheet concentration is 10~25g/L in the mixed solution.
Further, the temperature of the curing process is 150~240 DEG C, and curing time is 8~12h.
Beneficial effect caused by the present invention includes: that the present invention uses boron nitride nanosheet and POSS as filler, preparation The thermally conductive dielectric composite material of bismaleimide-triazine resin, boron nitride nanosheet can be obviously improved bismaleimide-three The heating conduction of piperazine resin, POSS can promote dispersion of the boron nitride nanosheet in resin matrix, and can reduce composite material Dielectric constant, avoid the excessive attenuation for leading to composite material dielectric properties because of a large amount of additions of heat filling.Of the invention Bismaleimide-triazine resin composite material has excellent heating conduction, while also having lower dielectric constant and excellent Different thermal stability.
Specific embodiment
Further details of explanation is done to the present invention combined with specific embodiments below, it should be appreciated that of the invention Protection scope is not limited by the specific implementation.
Embodiment 1
(1) surface of boron nitride nanosheet is modified: preparing the GTMAC aqueous solution that 200mL mass percent concentration is 1%. 2g boron nitride nanosheet powder is added in GTMAC solution, stirs 30min, then ultrasonic disperse under the conditions of 50 DEG C at room temperature 1h, then ultrasound and mechanical stirring 8h, products therefrom are washed with distilled water to neutrality, filter are taken after being separated by filtration under the conditions of 80 DEG C Slag is dried in vacuo 12h at 80 DEG C, obtains modified boron nitride nanosheet.
(2) 36g bisphenol A cyanate ester resin, 12g 4,4 '-diphenyl methane dimaleimide and 8g bis-phenol are weighed respectively A type epoxy resin, mixing, heating and melting, and it is stirred until homogeneous transparent, acquisition BT resin prepolymer.
(3) the BT resin prepolymer of step (2) is warming up to 115 DEG C, it is low that-seven isobutyl polyhedral of 2.8g aminopropyl is added Polysilsesquioxane (API-POSS), and magnetic agitation 15min add the modified boron nitride nanosheet of 5.6g, magnetic agitation 60min, during which homogenous disperse 5min.It is continuously heating to 125 DEG C, and magnetic agitation 60min, is then warming up to 140 DEG C again, magnetic force 20min is stirred, BT resin/boron nitride nanosheet/API-POSS compound resin is obtained.
(4) it in the compound resin injection mold obtained step (3), is placed in vacuum drying oven, excludes gas at 135 DEG C Bubble, is then transferred in air dry oven according to 150 DEG C/1h+160 DEG C/1h+180 DEG C/1h+200 DEG C/2h+220 DEG C/2h+240 DEG C/program of 1h solidified, and cooled to room temperature, obtain BT resin/boron nitride nanosheet/API-POSS composite wood Material.
Embodiment 2
(1) surface modifying method of boron nitride nanosheet is the same as embodiment 1.
(2) 36g bisphenol A cyanate ester resin, 12g 4,4 '-diphenyl methane dimaleimide and 8g bis-phenol are weighed respectively A type epoxy resin, mixing, heating and melting, and it is stirred until homogeneous transparent, acquisition BT resin prepolymer.
(3) the BT resin prepolymer of step (2) is warming up to 115 DEG C, it is low that-seven isobutyl polyhedral of 2.8g aminopropyl is added Polysilsesquioxane (API-POSS), and magnetic agitation 15min add the modified boron nitride nanosheet of 2.8g, magnetic agitation 60min, during which homogenous disperse 5min.It is continuously heating to 125 DEG C, and magnetic agitation 60min, is then warming up to 140 DEG C again, magnetic force 40min is stirred, BT resin/boron nitride nanosheet/API-POSS compound resin is obtained.
(4) it in the compound resin injection mold obtained step (3), is placed in vacuum drying oven, excludes gas at 140 DEG C Bubble, is then transferred in air dry oven according to the journey of 160 DEG C/1h+180 DEG C/2h+200 DEG C/2h+220 DEG C/2h+240 DEG C/2h Sequence is solidified, and cooled to room temperature, obtains BT resin/boron nitride nanosheet/API-POSS composite material.
Embodiment 3
(1) surface of boron nitride nanosheet is modified: it is water-soluble to prepare the GTMAC that 200mL mass percent concentration is 0.1% Liquid.5g boron nitride nanosheet powder is added in GTMAC solution, stirs 30min at room temperature, then the ultrasound point under the conditions of 50 DEG C 1h is dissipated, then ultrasound and mechanical stirring 10h under the conditions of 80 DEG C, products therefrom is washed with distilled water to neutrality, after being separated by filtration It takes filter residue to be dried in vacuo 12h at 80 DEG C, obtains modified boron nitride nanosheet.
(2) 36g bisphenol A cyanate ester resin, 12g 4,4 '-diphenyl methane dimaleimide and 8g bis-phenol are weighed respectively A type epoxy resin, mixing, heating and melting, and it is stirred until homogeneous transparent, acquisition BT resin prepolymer.
(3) the BT resin prepolymer of step (2) is warming up to 115 DEG C, 1.12g octa-aminopropyl polyhedral oligomeric sesquialter is added Siloxanes (APr-POSS), and magnetic agitation 15min add the modified boron nitride nanosheet of 5.6g, magnetic agitation 60min, phase Between homogenous disperse 5min.It is continuously heating to 125 DEG C, and magnetic agitation 60min, is then warming up to 140 DEG C again, magnetic agitation 20min obtains BT resin/boron nitride nanosheet/APr-POSS compound resin.
(4) it in the compound resin injection mold obtained step (3), is placed in vacuum drying oven, excludes gas at 135 DEG C Bubble, is then transferred in air dry oven according to 150 DEG C/1h+160 DEG C/1h+180 DEG C/1h+200 DEG C/2h+220 DEG C/2h+240 DEG C/program of 1h solidified, and cooled to room temperature, obtain BT resin/boron nitride nanosheet/APr-POSS composite wood Material.
Embodiment 4
(1) surface modifying method of boron nitride nanosheet is the same as embodiment 1.
(2) 36g bisphenol A cyanate ester resin, 12g 4,4 '-diphenyl methane dimaleimide and 8g bis-phenol are weighed respectively A type epoxy resin, mixing, heating and melting, and it is stirred until homogeneous transparent, acquisition BT resin prepolymer.
(3) the BT resin prepolymer of step (2) is warming up to 120 DEG C, eight aminophenyl polyhedral oligomeric times of 1.68g is added Half siloxanes (abbreviation APh-POSS), and magnetic agitation 15min add the modified boron nitride nanosheet of 16.8g, magnetic agitation 60min, during which homogenous disperse 5min.It is continuously heating to 125 DEG C, and magnetic agitation 60min, is then warming up to 135 DEG C again, magnetic force 10min is stirred, BT resin/boron nitride nanosheet/APh-POSS compound resin is obtained.
(4) it in the compound resin injection mold obtained step (3), is placed in vacuum drying oven, excludes gas at 130 DEG C Bubble, is then transferred in air dry oven according to 150 DEG C/1h+160 DEG C/2h+180 DEG C/2h+200 DEG C/2h+220 DEG C/2h program Solidified, and cooled to room temperature, obtains BT resin/boron nitride nanosheet/APh-POSS composite material.
Embodiment 5
(1) surface of boron nitride nanosheet is modified: it is water-soluble to prepare the GTMAC that 200mL mass percent concentration is 0.5% Liquid.3g boron nitride nanosheet powder is added in GTMAC solution, stirs 30min at room temperature, then the ultrasound point under the conditions of 50 DEG C 1h is dissipated, then ultrasound and mechanical stirring 9h, products therefrom are washed with distilled water to neutrality, take after being separated by filtration under the conditions of 80 DEG C Filter residue is dried in vacuo 12h at 80 DEG C, obtains modified boron nitride nanosheet.
(2) 32g bisphenol-f type cyanate ester resin, 16g 4,4 '-diphenyl methane dimaleimide and 8g bis-phenol are weighed respectively A type epoxy resin, mixing, heating and melting, and it is stirred until homogeneous transparent, acquisition BT resin prepolymer.
(3) the BT resin prepolymer of step (2) is warming up to 115 DEG C, it is low that-seven isobutyl polyhedral of 4.2g aminopropyl is added Polysilsesquioxane (API-POSS), and magnetic agitation 15min add the modified boron nitride nanosheet of 8.4g, magnetic agitation 60min, during which homogenous disperse 5min.It is continuously heating to 125 DEG C, and magnetic agitation 60min, is then warming up to 140 DEG C again, magnetic force 15min is stirred, BT resin/boron nitride nanosheet/API-POSS compound resin is obtained.
(4) it in the compound resin injection mold obtained step (3), is placed in vacuum drying oven, excludes gas at 140 DEG C Bubble, is then transferred in air dry oven according to the journey of 160 DEG C/1h+180 DEG C/1h+200 DEG C/2h+220 DEG C/2h+240 DEG C/2h Sequence is solidified, and cooled to room temperature, obtains BT resin/boron nitride nanosheet/API-POSS composite material.
Embodiment 6
(1) surface modifying method of boron nitride nanosheet is the same as embodiment 1.
(2) 36g bisphenol A cyanate ester resin, 12g 4,4 '-diphenyl methane dimaleimide and 8g bis-phenol are weighed respectively A type epoxy resin, mixing, heating and melting, and it is stirred until homogeneous transparent, acquisition BT resin prepolymer.
(3) the BT resin prepolymer of step (2) is warming up to 113 DEG C, it is low that-seven isobutyl polyhedral of 2.8g aminopropyl is added Polysilsesquioxane (API-POSS), and magnetic agitation 15min add the modified boron nitride nanosheet of 2.8g, magnetic agitation 60min, during which homogenous disperse 5min.It is continuously heating to 130 DEG C, and magnetic agitation 50min, is then warming up to 140 DEG C again, magnetic force 40min is stirred, BT resin/boron nitride nanosheet/API-POSS compound resin is obtained.
(4) it in the compound resin injection mold obtained step (3), is placed in vacuum drying oven, excludes gas at 145 DEG C Bubble, is then transferred in air dry oven according to the journey of 160 DEG C/1h+180 DEG C/2h+200 DEG C/2h+220 DEG C/2h+240 DEG C/2h Sequence is solidified, and cooled to room temperature, obtains BT resin/boron nitride nanosheet/API-POSS composite material.
The performance test of embodiment sample
Bismaleimide-triazine resin heat-conductive composite material obtained by embodiment is subjected to thermal conductivity, dielectric constant And thermal decomposition temperature test, corresponding data and the bismaleimide-triazine resin material that filler is not added are compared (such as Following table).Wherein, the test method of thermal conductivity is according to ASTM D5470-2006, and the test method of dielectric constant is according to GB/T 1409-2006, the test method of thermal decomposition temperature is according to ASTM-D790, test result is as follows table:
Boron nitride nanosheet of the invention and polyhedral oligomeric silsesquioxane are total to it can be seen from test result above With filling-modified bismaleimide-triazine resin heat-conductive composite material and pure bismaleimide-triazine resin material phase Than, heating conduction is significantly improved, and composite material has lower dielectric constant, meanwhile, boron nitride nanosheet and polyhedron The addition of oligomeric silsesquioxane also contributes to the thermal stability of bismaleimide-triazine resin material.
The above is only a preferred embodiment of the present invention, and the present invention is not limited in the content of embodiment.For in this field Technical staff for, can have various change and change within the scope of technical solution of the present invention, made any variation and Change, within that scope of the present invention.

Claims (10)

1. a kind of high thermal conductivity low-k bismaleimide-triazine resin, it is characterised in that: including following mass fraction Component
100 parts of matrix resin;
5~30 parts of heat filling;
2~7.5 parts of polyhedral oligomeric silsesquioxane;
The heat filling is boron nitride nanosheet;Described matrix resin is cyanate ester resin, bismaleimide and asphalt mixtures modified by epoxy resin The copolymer of rouge.
2. high thermal conductivity low-k bismaleimide-triazine resin according to claim 1, it is characterised in that: institute Stating heat filling is using 2, the 3 modified boron nitride nanosheets of epoxypropyltrimethylchloride chloride, the boron nitride nanosheet For the boron nitride nanosheet of hexagonal structure.
3. high thermal conductivity low-k bismaleimide-triazine resin according to claim 1, it is characterised in that: institute Stating cyanate ester resin is one of bisphenol A cyanate ester resin, bisphenol E-type cyanate resin, bisphenol-f type cyanate ester resin; The bismaleimide is 4,4 '-diphenyl methane dimaleimides, one in 4,4 '-Diphenyl Ether Bismaleimides Kind;The epoxy resin is bisphenol A type epoxy resin.
4. high thermal conductivity low-k bismaleimide-triazine resin according to claim 1, it is characterised in that: cyanogen Acid ester resin, three kinds of components of bismaleimide and epoxy resin mass ratio be 100:(30~60): (20~35).
5. high thermal conductivity low-k bismaleimide-triazine resin according to claim 1, it is characterised in that: institute The mass ratio for stating boron nitride nanosheet and polyhedral oligomeric silsesquioxane is (2:3)~(15:1).
6. high thermal conductivity low-k bismaleimide-triazine resin according to claim 1, it is characterised in that: institute The polyhedral oligomeric silsesquioxane stated is-seven isobutyl group polyhedral oligomeric silsesquioxane of aminopropyl, octa-aminopropyl polyhedron One of oligomeric silsesquioxane and eight aminophenyl polyhedral oligomeric silsesquioxanes.
7. a kind of preparation method of high thermal conductivity low-k bismaleimide-triazine resin, it is characterised in that: including following Step
S01 weighs bismaleimide, cyanate ester resin and epoxy resin, heating and melting in proportion, and is stirred until homogeneous It is bright, obtain BT resin prepolymer;
The BT resin prepolymer is warming up to 110~120 DEG C by S02, and polyhedral oligomeric silsesquioxane and boron nitride is added Nanometer sheet, stirring, continues to heat up, and obtains BT resin/boron nitride nanosheet/POSS compound resin;
S03 injects the compound resin in mold, is placed in vacuum drying oven, bubble is excluded at 130~150 DEG C, so After be transferred in air dry oven and carry out curing process, obtain BT resin/boron nitride nanosheet/POSS composite material.
8. the preparation method of high thermal conductivity low-k bismaleimide-triazine resin according to claim 7, special Sign is: the boron nitride nanosheet is modified boron nitride nanosheet, method of modifying are as follows: prepares GTMAC aqueous solution, GTMAC water The mass percent concentration of solution is 0.1~1%;Boron nitride nanosheet powder is added in GTMAC solution obtain mixing it is molten Liquid, after stirring at room temperature, then ultrasonic disperse under the conditions of 40~50 DEG C, then ultrasonic and machinery stirs under the conditions of 50~80 DEG C It mixes, products therefrom is washed with distilled water to neutrality, and filter residue is taken after being separated by filtration and is dried in vacuo, and obtains modified boron nitride and receives Rice piece.
9. the preparation method of high thermal conductivity low-k bismaleimide-triazine resin according to claim 8, special Sign is: boron nitride nanosheet concentration is 10~25 g/L in the mixed solution.
10. the preparation method of high thermal conductivity low-k bismaleimide-triazine resin according to claim 7, Be characterized in that: the temperature of the curing process is 150~240 DEG C, and curing time is 8~12h.
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