CN110120626A - A kind of production method of semiconductor laser - Google Patents
A kind of production method of semiconductor laser Download PDFInfo
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- CN110120626A CN110120626A CN201810123991.0A CN201810123991A CN110120626A CN 110120626 A CN110120626 A CN 110120626A CN 201810123991 A CN201810123991 A CN 201810123991A CN 110120626 A CN110120626 A CN 110120626A
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- laser
- chip
- longitudinal slot
- transverse groove
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of production methods of semiconductor laser.The production method of semiconductor laser of the present invention, utilize specific position fluting, insulation processing, and the connection between laser N face large area and laser substrate is realized using metal vapor deposition process, it connecting wire can be used directly in laser substrate, phenomena such as welding process for eliminating traditional pellet bonding machine, chip caused by avoiding because of pellet bonding machine welding is damaged, welding is empty, not prison welding.
Description
Technical field
The present invention relates to a kind of production methods of semiconductor laser, belong to the technical field of semiconductor laser chip.
Background technique
Semiconductor laser have many advantages, such as small in size, light-weight, high-efficient, service life it is long be easy to modulate and cheap,
Industry, medical treatment and military field be widely used (such as material processing, optical-fibre communications, laser ranging, Target indication,
Laser guidance, laser radar, space optical communication etc.).Semiconductor laser chip needs to use by encapsulation, by laser
Chip package can enable chip preferably adapt to connect to the good heat radiating for being not only able to achieve chip on heat sink, but also by encapsulation
Conducting wire uses.In the prior art, the basic procedure of encapsulation is put on solder in heat sink upper vapor deposition solder, then by chip of laser
High temperature alloy is adhered on laser shell after alloy again heat sink, finally using spun gold or filamentary silver pellet bonding machine in laser core
The face P of piece or the face N routing are connected on the leg of shell.In pellet bonding machine bonding process: spun gold or filamentary silver are through the chopper at tip
Interior, the tip of chopper is pressed on the face P or the face N of chip of laser, and giving chopper ultrasonic power and certain pressure would generally make
It is ruptured at chip of laser or occurs beating electrode phenomenon, chip of laser is made to fail.
When high-power bar of item encapsulates, there is a kind of copper strips welding procedure, copper strips is set on the surface of bar item, in laser core
Piece surface makes copper strip surface metal layer and chip of laser surface metal-layer by metal eutectic welding technology under high pressure, high temperature
Welding is realized in congruent melting；High-pressure process in the technology be easy to cause chip of laser to rupture, and is easy in addition, the area of copper strips is larger
Welding cavity is generated, laser fails are caused.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of production method of semiconductor laser.
The technical solution of the present invention is as follows:
A kind of production method of semiconductor laser, comprises the following steps that
1) laser substrate is made, in the surface evaporation metal conductive layer of the laser substrate；
2) it in laser substrate surface resist coating, is exposed using photolithography plate, obtains evenly distributed transverse groove and longitudinal direction
Slot；
3) photoresist developing；Remove the photoresist in transverse groove and longitudinal slot, the protection of other region photoresists；
4) remove the metal conducting layer in transverse groove and longitudinal slot；The laser substrate in transverse groove and longitudinal slot is etched,
Etching depth >=10um；
5) laser substrate is cleaned, the face-down chip of laser of P is encapsulated into laser substrate, chip of laser
Light-emitting surface leans out transverse groove 0~10um of lower side, the 10~50um of inside of the right edge of chip of laser in longitudinal slot left side；
6) it in laser substrate surface resist coating, is exposed by photolithography plate, obtains rectangular region；The rectangle
The left side in domain is across chip of laser 30~50um of right edge, and the right edge of rectangular region is across the right side of the longitudinal slot
30~50um of side；The upper side edge of rectangular region 30~50um on the inside of chip of laser upper side edge, the downside of rectangular region
While 30~50um on the inside of chip of laser lower side；After development, the overseas region photoetching in laser substrate surface rectangle
Glue protection；
7) insulating film is grown in laser substrate surface, thickness >=0.02um removes photomask surface glue, only in institute after growth
It states and retains insulating film in rectangular region；
8) it in laser substrate surface resist coating, is exposed by photolithography plate, obtains rectangle evaporation metal area, rectangle
The left side in evaporation metal area and the left side distance >=30um of chip of laser, the right edge in rectangle evaporation metal area across
Left side 100um~500um of the longitudinal slot；It is protected in rectangle evaporation metal area without photoresist after development；
9) in laser substrate surface evaporated metal layer, metal layer thickness >=0.5um is shelled photoresist after evaporated metal layer
It leaves away and removes；
10) cutting obtains single chip of laser；Using the longitudinal slot as boundary, the left side of longitudinal slot is chip of laser
Positive electrode, the right side of longitudinal slot are chip of laser negative electrode.
Preferred according to the present invention, the laser substrate in the step 1) is insulating materials.Further, the insulation
Material is silicon-on-insulator, SiC or AlN.
Preferred according to the present invention, in the step 1), the laser substrate is circle, and diameter is 2 inches~4 English
It is very little, with a thickness of 200~400um；The metal conducting layer with a thickness of 1~4um.
Preferred according to the present invention, in the step 2), the width of the transverse groove is 30~40um, the longitudinal slot
Width is 10~50um, between transverse groove between be divided into 2~3mm, between longitudinal slot between be divided into 2~3mm；
Preferred according to the present invention, in the step 4), the metal conducting layer in transverse groove and longitudinal slot is rotten by chemistry
The method of erosion removes；The laser substrate in transverse groove and longitudinal slot is etched by ICP etching technics；
It is preferred according to the present invention, in the step 5), P face-down chip of laser indium or silver paste are encapsulated into sharp
In light device substrate.
Preferred according to the present invention, in the step 7), the material of the insulating film is SiO2Or silicon nitride, Al2O3 or
Titanium oxide.
Preferred according to the present invention, in the step 10), transverse cuts are longitudinally cut in the middle position of the transverse groove
Cut the edge in rectangle evaporation metal region.
The invention has the benefit that
1. the present invention is directed to existing individual laser package technique, one kind is provided and exempts from routing semiconductor laser structure and production side
Method can save pellet bonding machine welding process or eutectic weldering process, be directly connected to conducting wire use；The invented technology is simple, is suitble to batch
It makes, is at low cost；
2. the production method of semiconductor laser of the present invention using specific position fluting, insulation processing, and uses gold
Belong to the connection between evaporation coating method realization laser N face large area and laser substrate, can directly be connected in laser substrate
Conducting wire uses, and eliminates the welding process of traditional pellet bonding machine, and chip caused by avoiding because of pellet bonding machine welding is damaged, welding is empty
Phenomena such as hole, not prison welding.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of transverse groove of the present invention and longitudinal slot；
Fig. 2 is the schematic cross-section of laser substrate after etching laser substrate；
Fig. 3 is that chip of laser is encapsulated into the schematic diagram in laser substrate；
Fig. 4 is the schematic diagram for being lithographically derived rectangular region；
Fig. 5 is the schematic diagram that insulating film is grown in rectangular region；
Fig. 6 is the schematic diagram for being lithographically derived rectangle evaporation metal area；
Fig. 7 is the schematic diagram in laser substrate surface evaporated metal layer；
Fig. 8 is cutting schematic diagram；
Fig. 9 is the schematic diagram of single chip of laser；
Wherein, 1, laser substrate；2, transverse groove；3, longitudinal slot；4, metal conducting layer；5, chip of laser；6, rectangular
Shape region；7, photoresist；8, insulating film；9, rectangle evaporation metal area；10, metal layer；11, chip of laser positive electrode；12,
Chip of laser negative electrode.
Specific embodiment
Below with reference to embodiment and Figure of description, the present invention will be further described, but not limited to this.
Embodiment 1
A kind of production method of semiconductor laser, comprises the following steps that
1) laser substrate 1 is made, in the surface evaporation metal conductive layer 4 of the laser substrate 1；The laser base
Bottom 1 is silicon-on-insulator；The laser substrate 1 is circle, and diameter is 2 inches, with a thickness of 200um；The metal conducting layer 4
With a thickness of 1um.
2) it in 1 surface resist coating 7 of laser substrate, is exposed, obtain evenly distributed transverse groove 2 and indulged using photolithography plate
To slot 3；
The width of the transverse groove 2 is 30um, and the width of the longitudinal slot 3 is 30um, between transverse groove 2 between be divided into
2mm, between longitudinal slot 3 between be divided into 2mm；As shown in Figure 1；
3) photoresist developing；Remove the photoresist in transverse groove 2 and longitudinal slot 3, the protection of other region photoresists；
4) remove the metal conducting layer 4 in transverse groove 2 and longitudinal slot 3；Etch the laser in transverse groove 2 and longitudinal slot 3
Substrate 1, etching depth >=10um；Section is as shown in Figure 2；Metal conducting layer 4 in transverse groove 2 and longitudinal slot 3 is rotten by chemistry
The method of erosion removes；The laser substrate 1 in transverse groove 2 and longitudinal slot 3 is etched by ICP etching technics；
5) laser substrate 1 is cleaned, the face-down chip of laser 5 of P is encapsulated into laser substrate 1, laser core
The light-emitting surface of piece 5 leans out 2 lower side 0.1um of transverse groove, and the right edge of chip of laser 5 is in the inside of 3 left side of longitudinal slot
10um；As shown in Figure 3.The face-down chip of laser 5 of P is encapsulated into laser substrate 1 with silver paste.
6) it in 1 surface resist coating of laser substrate, is exposed by photolithography plate, obtains rectangular region 6；The rectangle
The left side in region 6 is across 5 right edge 30um of chip of laser, and the right edge of rectangular region 6 is across the right side of the longitudinal slot 3
Side 30um；The upper side edge of rectangular region 6 30um, lower side of rectangular region 6 on the inside of 5 upper side edge of chip of laser exist
30um on the inside of 5 lower side of chip of laser；After development, the region photoresist outside 1 surface rectangular region 6 of laser substrate is protected
Shield；As shown in Figure 4；
7) insulating film 8 is grown on 1 surface of laser substrate, with a thickness of 0.03um, photomask surface glue is removed after growth, is only existed
Retain insulating film 8 in the rectangular region 6；Section is as shown in Figure 5；The insulating film 8 is SiO2Film；
8) it in 1 surface resist coating of laser substrate, is exposed by photolithography plate, obtains rectangle evaporation metal area 9, it is rectangular
The left side in shape evaporation metal area 9 and the left side distance of chip of laser 5 are 60um, the right side in rectangle evaporation metal area 9
The left side 100um of the excessively described longitudinal slot 3 of end bay；It is protected in rectangle evaporation metal area 9 without photoresist after development；Such as
Shown in Fig. 6；
9) in 1 surface evaporated metal layer 10 of laser substrate, metal layer 10, will after evaporated metal layer 10 with a thickness of 0.5um
Photoresist lift off removal；Section is as shown in Figure 7；
10) cutting obtains single chip of laser 5；It is boundary with the longitudinal slot 3, the left side of longitudinal slot 3 is laser
Chip positive electrode 11, the right side of longitudinal slot 3 are chip of laser negative electrode 12.Section is as shown in Figure 9.
Transverse cuts are at the middle position of the transverse groove 2, the longitudinally cutting edge in rectangle evaporation metal region 9
Place.It is cut according to dotted line shown in Fig. 8.
Claims (7)
1. a kind of production method of semiconductor laser, which is characterized in that comprise the following steps that
1) laser substrate is made, in the surface evaporation metal conductive layer of the laser substrate；
2) it in laser substrate surface resist coating, is exposed using photolithography plate, obtains evenly distributed transverse groove and longitudinal slot；
3) photoresist developing；Remove the photoresist in transverse groove and longitudinal slot, the protection of other region photoresists；
4) remove the metal conducting layer in transverse groove and longitudinal slot；Etch the laser substrate in transverse groove and longitudinal slot, etching
Depth >=10um；
5) laser substrate is cleaned, the face-down chip of laser of P is encapsulated into laser substrate, chip of laser goes out light
Face leans out transverse groove 0~10um of lower side, the 10~50um of inside of the right edge of chip of laser in longitudinal slot left side；
6) it in laser substrate surface resist coating, is exposed by photolithography plate, obtains rectangular region；The rectangular region
Left side is across chip of laser 30~50um of right edge, the right edge 30 of the right edge of rectangular region across the longitudinal slot
~50um；The upper side edge of rectangular region 30~50um on the inside of chip of laser upper side edge, the lower side of rectangular region exist
30~50um on the inside of chip of laser lower side；After development, the overseas region photoresist in laser substrate surface rectangle is protected
Shield；
7) insulating film is grown in laser substrate surface, thickness >=0.02um removes photomask surface glue, only in the length after growth
Retain insulating film in square region；
8) it in laser substrate surface resist coating, is exposed by photolithography plate, obtains rectangle evaporation metal area, rectangle vapor deposition
The left side of metal area and the left side distance >=30um of chip of laser, the right edge in rectangle evaporation metal area is across described
Left side 100um~500um of longitudinal slot；It is protected in rectangle evaporation metal area without photoresist after development；
9) in laser substrate surface evaporated metal layer, metal layer thickness >=0.5um is gone photoresist lift off after evaporated metal layer
It removes；
10) cutting obtains single chip of laser；Using the longitudinal slot as boundary, the left side of longitudinal slot is chip of laser positive electricity
Pole, the right side of longitudinal slot are chip of laser negative electrode.
2. the production method of semiconductor laser according to claim 1, which is characterized in that the laser in the step 1)
Device substrate is insulating materials；The laser substrate is circle, and diameter is 2 inches~4 inches, with a thickness of 200~400um；Institute
State metal conducting layer with a thickness of 1~4um.
3. the production method of semiconductor laser according to claim 1, which is characterized in that described in the step 2)
The width of transverse groove is 30~40um, and the width of the longitudinal slot is 10~50um, between transverse groove between be divided into 2~3mm, indulge
2~3mm is divided between slot.
4. the production method of semiconductor laser according to claim 1, which is characterized in that in the step 4), laterally
Metal conducting layer in slot and longitudinal slot is removed by the method for chemical attack；Transverse groove is etched by ICP etching technics and is indulged
Laser substrate into slot.
5. the production method of semiconductor laser according to claim 1, which is characterized in that in the step 5), by the face P
Chip of laser directed downwardly indium or silver paste are encapsulated into laser substrate.
6. the production method of semiconductor laser according to claim 1, which is characterized in that described in the step 7)
The material of insulating film is SiO2Or silicon nitride, Al2O3 or titanium oxide.
7. the production method of semiconductor laser according to claim 1, which is characterized in that in the step 10), laterally
Cutting is in the middle position of the transverse groove, the longitudinally cutting edge in rectangle evaporation metal region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810123991.0A CN110120626B (en) | 2018-02-07 | 2018-02-07 | Production method of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810123991.0A CN110120626B (en) | 2018-02-07 | 2018-02-07 | Production method of semiconductor laser |
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| Publication Number | Publication Date |
|---|---|
| CN110120626A true CN110120626A (en) | 2019-08-13 |
| CN110120626B CN110120626B (en) | 2020-11-27 |
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| CN201810123991.0A Active CN110120626B (en) | 2018-02-07 | 2018-02-07 | Production method of semiconductor laser |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070278692A1 (en) * | 2006-06-01 | 2007-12-06 | Powertech Technology Inc. | Structure of semiconductor substrate and molding method |
| CN104637966A (en) * | 2013-11-08 | 2015-05-20 | 瑞萨电子株式会社 | Semiconductor device and method of manufacturing same |
| CN104867835A (en) * | 2015-05-05 | 2015-08-26 | 西安电子科技大学 | Preparation method for metal semiconductor field effect transistor with wide channel and deep recesses |
| WO2016104610A1 (en) * | 2014-12-24 | 2016-06-30 | 浜松ホトニクス株式会社 | Semiconductor laser device |
| CN107579032A (en) * | 2017-07-27 | 2018-01-12 | 厦门市三安集成电路有限公司 | A kind of backside process method of compound semiconductor device |
-
2018
- 2018-02-07 CN CN201810123991.0A patent/CN110120626B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070278692A1 (en) * | 2006-06-01 | 2007-12-06 | Powertech Technology Inc. | Structure of semiconductor substrate and molding method |
| CN104637966A (en) * | 2013-11-08 | 2015-05-20 | 瑞萨电子株式会社 | Semiconductor device and method of manufacturing same |
| WO2016104610A1 (en) * | 2014-12-24 | 2016-06-30 | 浜松ホトニクス株式会社 | Semiconductor laser device |
| CN104867835A (en) * | 2015-05-05 | 2015-08-26 | 西安电子科技大学 | Preparation method for metal semiconductor field effect transistor with wide channel and deep recesses |
| CN107579032A (en) * | 2017-07-27 | 2018-01-12 | 厦门市三安集成电路有限公司 | A kind of backside process method of compound semiconductor device |
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| Publication number | Publication date |
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| CN110120626B (en) | 2020-11-27 |
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