CN110118949B - Electromagnet state detection circuit and detection method - Google Patents
Electromagnet state detection circuit and detection method Download PDFInfo
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- CN110118949B CN110118949B CN201910488105.9A CN201910488105A CN110118949B CN 110118949 B CN110118949 B CN 110118949B CN 201910488105 A CN201910488105 A CN 201910488105A CN 110118949 B CN110118949 B CN 110118949B
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 238000005070 sampling Methods 0.000 claims abstract description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1253—Measuring galvano-magnetic properties
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Abstract
The invention discloses an electromagnet state detection circuit and a detection method, and belongs to the technical field of electricity. The detection circuit comprises a microprocessor U1, P-channel MOSFETs Q1 and Q2, a MOSFET driving circuit and a current sampling circuit. The microprocessor U1 is provided with two paths of I/O signals, namely, a brain_Ctrl1 and a brain_Ctrl2, and also provided with an ADC sampling port brain_Current. The drain electrode of the Q1 is connected with the anode of the diode D1, and the cathode of the diode D1 is connected with the input end of the electromagnet B1; the output end of the electromagnet B1 is connected with a resistor R7 in the current sampling circuit and then grounded GND; the brain_ctrl2 is connected to the gate of Q2; when the brake_ctrl1 is at a high level, Q1 is turned on, and when the brake_ctrl2 is at a high level, Q2 is turned on. When the electromagnet passes through the current, if the iron core of the electromagnet is mechanically clamped or the attraction force of the electromagnet is insufficient, the traditional method cannot detect the state of the electromagnet, and hidden danger can be brought to a system; the invention can detect the executed state of the electromagnet at any time, so that the control mechanism can take countermeasures according to the detected state.
Description
Technical Field
The invention belongs to the technical field of electricity, relates to a detection circuit and a detection method, and particularly relates to an electromagnet state detection circuit and a detection method.
Background
The electromagnet is a device for generating electromagnetic force by electrifying, when current passes through the coil of the electromagnet, the electromagnetic force is generated, so that the electromagnet can overcome the resistance of an external spring or an elastic sheet or the attraction of the magnet to generate displacement, the iron core can be sucked into the coil, and when the current of the coil of the electromagnet disappears, the iron core is restored to the initial state.
Because current electro-magnet is an open loop control mode, send the electro-magnet control command promptly after, can't judge the state after the electro-magnet carries out the control command, when the iron core of electro-magnet is blocked by machinery or electro-magnet suction is insufficient, control mechanism can't know to probably bring the hidden danger for the system.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an electromagnet state detection circuit and a detection method, when the electromagnet passes through current, the state of the electromagnet after execution can be detected, so that a control mechanism can take countermeasures according to the detected state.
The invention provides an electromagnet state detection circuit, which comprises a microprocessor U1, MOSFETs Q1 and Q2, a MOSFET driving circuit and a Current sampling circuit, wherein the microprocessor U1 is provided with two paths of I/O signals, namely, a brain_Ctrl1 and a brain_Ctrl2, and an ADC sampling port, namely, a brain_Current.
The MOSFET driving circuit comprises a MOSFET Q1 driving circuit and a MOSFET Q2 driving circuit;
the drain electrode of the Q1 is connected with the anode of the diode D1, and the cathode of the diode D1 is connected with the input end of the electromagnet B1; the output end of the electromagnet B1 is connected with a resistor R7 in the current sampling circuit and then grounded GND; the brain_ctrl2 is connected to the gate of the MOSFET Q2 after passing through the driving circuit of the Q2, the source of the Q2 is connected to the power supply positive pole vp+, and the drain of the Q2 is connected to the cathode of the diode D1. VP+ voltage is greater than VCC voltage; q1 may be turned on when the brain_Ctrl1 is high, and Q2 may be turned on when the brain_Ctrl2 is high.
The current sampling circuit comprises a resistor R7, a resistor R11, a resistor R12, a resistor R10, a resistor R13, an operational amplifier U2, a diode D2 and a diode D3, wherein the operational amplifier U2 comprises two independent amplifiers U2D and U2C, one end of the resistor R11 is connected with the resistor R7, the other end is connected with the non-inverting input end of the U2D, one end of the resistor R10 is connected with the non-inverting input end of the U2D, one end is connected with +1.65V voltage, one end of the resistor R12 is connected with the ground GND, the other end is connected with the inverting input end of the U2D, one end is connected with the output of the U2D, the resistance values of the resistor R11 and the resistor R12 are equal, and the resistance values of the resistor R10 and the resistor R13 are equal. The output of U2D connects the non-inverting input end of U2C, the inverting input end of U2C connects the output end of U2C, pin No. 4 of U2C connects +12V voltage, pin No. 11 connects ground GND, the output of U2C connects ADC_0 pin of U1 and cathode of diode D3 and anode of diode D2, anode of diode D3 connects ground GND, cathode of diode D2 connects 3.3V power supply voltage.
When the brake_ctrl1 is at a high level, current flows from VCC to the electromagnet B1 sequentially through the Q1 and the diode D1, so that the coil of the electromagnet B1 is electrified, and the iron core of the electromagnet B1 is adsorbed by the coil; when the brake_ctrl2 is at a low level, Q1 is turned off, the coil in electromagnet B1 is de-energized, and the core of electromagnet B1 is ejected by a spring or sucked out by an external magnet.
The invention has the advantages that:
by using the electromagnet state detection circuit and the electromagnet state detection method provided by the invention, the state of the electromagnet can be detected at any moment, and corresponding measures can be taken for the electromagnet according to the detected state.
Drawings
Fig. 1 is a schematic diagram of an electromagnet state detecting circuit according to the present invention.
Detailed Description
The invention provides an electromagnet state detection circuit and a state detection method, which are further described below with reference to the accompanying drawings and the specific embodiments.
As shown in fig. 1, the present invention first provides an electromagnet state detection circuit, which includes a microprocessor U1, a P-channel MOSFET Q2, a MOSFET driving circuit, and a current sampling circuit. The microprocessor U1 (chip model TMS320F 2812/335/379) has two paths of I/O signals, namely, a brain_Ctrl1 and a brain_Ctrl2, and also has an ADC sampling port brain_Current.
The MOSFET driving circuit comprises a MOSFET Q1 driving circuit and a MOSFET Q2 driving circuit. The driving circuit of the MOSFET Q2 consists of a resistor R3, a resistor R4, a resistor R5, a resistor R8 and a triode Q4, wherein one end of the resistor R5 is connected with the GPIO_1, the other end is connected with the base electrode of the triode Q4, the emitter electrode of the triode Q4 is grounded, one end of the resistor R8 is connected with the base electrode of the triode Q4, the other end is grounded, one end of the resistor R3 is connected with a power supply voltage VP+ and the grid electrode of the Q2, one end of the resistor R4 is connected with the grid electrode of the Q2, and the other end is connected with the collector electrode of the triode Q4.
The driving circuit of the MOSFET Q1 consists of a resistor R1, a resistor R2, a resistor R6, a resistor R9 and a triode Q3, wherein one end of the resistor R6 is connected with the CPIO_0, the other end of the resistor R6 is connected with the base electrode of the triode Q3, the emitter electrode of the triode Q3 is grounded, one end of the resistor R9 is connected with the base electrode of the triode Q3, the other end of the resistor R2 is grounded, one end of the resistor R2 is connected with the grid electrode of the Q1, one end of the resistor R2 is connected with the collector electrode of the triode Q3, one end of the resistor R1 is connected with the VCC, and the other end of the resistor R1 is connected with the collector electrode of the triode Q3.
The drain electrode of the Q1 is connected with the anode of the diode D1, and the cathode of the diode D1 is connected with the input end of the electromagnet B1; the output end of the electromagnet B1 is connected with a resistor R7 in the current sampling circuit and then grounded GND; the brain_ctrl2 is connected to the gate of the MOSFET Q2 after passing through the driving circuit of the Q2, the source of the Q2 is connected to the power supply positive pole vp+, and the drain of the Q2 is connected to the cathode of the diode D1. The VP+ voltage is greater than the VCC voltage. Q1 may be turned on when the brain_Ctrl1 is high, and Q2 may be turned on when the brain_Ctrl2 is high.
The current sampling circuit comprises a resistor R7, a resistor R11, a resistor R12, a resistor R10, a resistor R13, an operational amplifier U2, a diode D2 and a diode D3, wherein U2 is an operational amplifier (chip model OPA 4171), U2D, U C is represented as two independent amplifiers of U2, one end of the resistor R11 is connected with the resistor R7, the other end is connected with the non-inverting input end of U2D, one end of the resistor R10 is connected with +1.65V voltage, one end of the resistor R12 is connected with the ground GND, the other end is connected with the inverting input end of U2D, one end of the resistor R13 is connected with the inverting input end of U2D, and the other end is connected with the output of U2D, wherein the resistance values of the resistor R11 and the resistor R12 are equal, and the resistance values of the resistor R10 and the resistor R13 are equal. The output of U2D connects the non-inverting input end of U2C, the inverting input end of U2C connects the output end of U2C, pin No. 4 of U2C connects +12V voltage, pin No. 11 connects ground GND, the output of U2C connects ADC_0 pin of U1 and cathode of diode D3 and anode of diode D2, anode of diode D3 connects ground GND, cathode of diode D2 connects 3.3V power supply voltage.
When the brake_ctrl1 is at a high level, current flows from VCC to the electromagnet B1 through Q1 and the diode D1 in order, so that the coil of the electromagnet B1 is powered, and the iron core of the electromagnet B1 is attracted by the coil. When the brake_ctrl2 is at a low level, Q1 is turned off, the coil in electromagnet B1 is de-energized, and the core of electromagnet B1 is ejected by a spring or sucked out by an external magnet.
After the brake_ctrl1 is at a high level, if the iron core of the electromagnet is mechanically clamped or the attraction force of the electromagnet is insufficient, the traditional method cannot detect the state of the electromagnet and may bring hidden danger to a system, so the invention provides a method for detecting the state of the electromagnet, which specifically comprises the following steps:
step one, in the initial state of the electromagnet B1, a short-time pulse with the length of 50 mu S-200 mu S is sent through the brake_ctrl2, the voltage value of the brake_current in the short-time pulse is acquired in real time through the microprocessor U1, the voltage value of the brake_current is acquired for a plurality of times, the voltage change slope value of the voltage value of the brake_current in the short-time pulse is calculated, and the voltage change slope value is calculated as S1 and stored.
And step two, after the brake_ctrl1 becomes a constant high level, sending a short-time pulse with the same time as that in the step one through the brake_ctrl2, and simultaneously calculating the voltage change slope value of the brake_current in the short-time pulse state, and calculating the voltage change slope value as S2.
Step three, comparing the values of S1 and S2; when the absolute value of (S2-S1)/S1 exceeds 0.25, judging that the iron core of the electromagnet B1 has sent action, namely the electromagnet B1 has normally operated according to a control instruction; otherwise, judging that the electromagnet B1 does not execute the instruction, the microprocessor U1 will send the control instruction again, and repeating the detection methods of the first step and the second step. If the electromagnet B1 is detected to work normally without the control instruction for three times, the microprocessor U1 sends out an alarm signal.
The method solves the problem that the actual working state of the electromagnet B1 cannot be judged after the electromagnet control instruction is sent.
Claims (3)
1. An electromagnet state detection circuit is characterized in that: the detection circuit comprises a microprocessor U1, MOSFETs Q1 and Q2, a MOSFET driving circuit and a Current sampling circuit, wherein the microprocessor U1 is provided with two paths of I/O signals of brain_Ctrl1 and brain_Ctrl2 and an ADC sampling port brain_Current;
the MOSFET driving circuit comprises a MOSFET Q1 driving circuit and a MOSFET Q2 driving circuit; the driving circuit of the MOSFET Q2 consists of a resistor R3, a resistor R4, a resistor R5, a resistor R8 and a triode Q4, wherein one end of the resistor R5 is connected with the GPIO_1, the other end is connected with the base electrode of the triode Q4, the emitter electrode of the triode Q4 is grounded, one end of the resistor R8 is connected with the base electrode of the triode Q4, the other end is grounded, one end of the resistor R3 is connected with a power supply voltage VP+ and the grid electrode of the Q2, one end of the resistor R4 is connected with the grid electrode of the Q2, and the other end is connected with the collector electrode of the triode Q4;
the driving circuit of the MOSFET Q1 consists of a resistor R1, a resistor R2, a resistor R6, a resistor R9 and a triode Q3, wherein one end of the resistor R6 is connected with CPIO_0, the other end is connected with a base electrode of the triode Q3, an emitter electrode of the triode Q3 is grounded, one end of the resistor R9 is connected with the base electrode of the triode Q3, the other end is grounded, one end of the resistor R2 is connected with a grid electrode of the Q1, one end is connected with a collector electrode of the triode Q3, one end of the resistor R1 is connected with VCC, and the other end is connected with the collector electrode of the triode Q3;
the drain electrode of the Q1 is connected with the anode of the diode D1, and the cathode of the diode D1 is connected with the input end of the electromagnet B1; the output end of the electromagnet B1 is connected with a resistor R7 in the current sampling circuit and then grounded GND; the Brake_Ctrl2 is connected to the grid electrode of the MOSFET Q2 after passing through a drive circuit of the MOSFET Q2, the source electrode of the Q2 is connected with the positive electrode VP+ of the power supply, and the drain electrode of the Q2 is connected with the cathode of the diode D1; VP+ voltage is greater than VCC voltage; when the brain_ctrl1 is at a high level, Q1 can be turned on, and when the brain_ctrl2 is at a high level, Q2 can be turned on;
the current sampling circuit consists of a resistor R7, a resistor R11, a resistor R12, a resistor R10, a resistor R13, an operational amplifier U2, a diode D2 and a diode D3, wherein the operational amplifier U2 comprises two independent amplifiers U2D and U2C, one end of the resistor R11 is connected with the resistor R7, the other end is connected with the non-inverting input end of the U2D, one end of the resistor R10 is connected with the non-inverting input end of the U2D, one end of the resistor R12 is connected with +1.65V voltage, one end of the resistor R12 is connected with the ground GND, the other end is connected with the inverting input end of the U2D, one end of the resistor R13 is connected with the output of the U2D, the resistance values of the resistor R11 and the resistor R12 are equal, and the resistance values of the resistor R10 and the resistor R13 are equal; the output of U2D is connected with the non-inverting input end of U2C, the inverting input end of U2C is connected with the output end of U2C, the pin No. 4 of U2C is connected with +12V voltage, the pin No. 11 is grounded GND, the output of U2C is connected with the ADC_0 pin of U1, the cathode of diode D3 and the anode of diode D2, the anode of diode D3 is grounded GND, and the cathode of diode D2 is connected with 3.3V power supply voltage;
when the brake_ctrl1 is at a high level, current flows from VCC to the electromagnet B1 sequentially through the Q1 and the diode D1, so that the coil of the electromagnet B1 is electrified, and the iron core of the electromagnet B1 is adsorbed by the coil; when the brake_ctrl2 is at a low level, Q1 is turned off, the coil in electromagnet B1 is de-energized, and the core of electromagnet B1 is ejected by a spring or sucked out by an external magnet.
2. The electromagnet state detection circuit of claim 1 wherein: q1 and Q2 are P channel MOSFET, and the microprocessor U1 chip model TMS320F2812/335/379.
3. The method for detecting an electromagnet state according to claim 1, wherein: the method comprises the following steps:
step one, under the condition that an electromagnet B1 is in an initial state, short-time pulse with the length of 50 mu S-200 mu S is sent through a brake_ctrl2, the voltage value of a brake_current position in the short-time pulse is obtained in real time through a microprocessor U1, the voltage value of the brake_current position is obtained for a plurality of times, the voltage change slope value of the voltage value of the brake_current position in the short-time pulse is calculated, and the voltage change slope value is calculated as S1 and stored;
step two, after the brake_ctrl1 becomes a constant high level, sending a short-time pulse with the same time as that in the step one through the brake_ctrl2, and simultaneously calculating the voltage change slope value of the brake_current in a short-time pulse state, and calculating the voltage change slope value as S2;
step three, comparing the values of S1 and S2; when the absolute value of (S2-S1)/S1 exceeds 0.25, judging that the iron core of the electromagnet B1 has sent action, namely the electromagnet B1 has normally operated according to a control instruction; otherwise, judging that the electromagnet B1 does not execute the instruction, and the microprocessor U1 will send the control instruction again to repeat the detection methods of the first step and the second step; if the electromagnet B1 is detected to work normally without the control instruction for three times, the microprocessor U1 sends out an alarm signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910488105.9A CN110118949B (en) | 2019-06-05 | 2019-06-05 | Electromagnet state detection circuit and detection method |
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| CN201910488105.9A CN110118949B (en) | 2019-06-05 | 2019-06-05 | Electromagnet state detection circuit and detection method |
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| CN110118949B true CN110118949B (en) | 2024-04-12 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022143450A1 (en) * | 2020-12-31 | 2022-07-07 | 苏州艾利特机器人有限公司 | Industrial robot, brake, and state monitoring method |
| CN113030673B (en) * | 2021-02-24 | 2024-06-14 | 中科新松有限公司 | Electromagnet control circuit and detection method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201562A (en) * | 1994-01-07 | 1995-08-04 | Fuji Electric Co Ltd | Electromagnet device |
| CN203858947U (en) * | 2014-05-20 | 2014-10-01 | 常熟开关制造有限公司(原常熟开关厂） | Electromagnet control device |
| CN104465015A (en) * | 2014-11-28 | 2015-03-25 | 上海富山精密机械科技有限公司 | Electromagnet driving circuit for cloth pressing mechanism |
| CN105761877A (en) * | 2016-05-06 | 2016-07-13 | 深圳市君航智远科技有限公司 | Protection circuit and control method of multi-channel direct-current electromagnet |
| CN210155308U (en) * | 2019-06-05 | 2020-03-17 | 中科新松有限公司 | Electromagnet state detection circuit |
-
2019
- 2019-06-05 CN CN201910488105.9A patent/CN110118949B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201562A (en) * | 1994-01-07 | 1995-08-04 | Fuji Electric Co Ltd | Electromagnet device |
| CN203858947U (en) * | 2014-05-20 | 2014-10-01 | 常熟开关制造有限公司(原常熟开关厂） | Electromagnet control device |
| CN104465015A (en) * | 2014-11-28 | 2015-03-25 | 上海富山精密机械科技有限公司 | Electromagnet driving circuit for cloth pressing mechanism |
| CN105761877A (en) * | 2016-05-06 | 2016-07-13 | 深圳市君航智远科技有限公司 | Protection circuit and control method of multi-channel direct-current electromagnet |
| CN210155308U (en) * | 2019-06-05 | 2020-03-17 | 中科新松有限公司 | Electromagnet state detection circuit |
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