CN110113881B - Method for removing active metal welding layer in aluminum nitride ceramic circuit board - Google Patents
Method for removing active metal welding layer in aluminum nitride ceramic circuit board Download PDFInfo
- Publication number
- CN110113881B CN110113881B CN201910270823.9A CN201910270823A CN110113881B CN 110113881 B CN110113881 B CN 110113881B CN 201910270823 A CN201910270823 A CN 201910270823A CN 110113881 B CN110113881 B CN 110113881B
- Authority
- CN
- China
- Prior art keywords
- active metal
- aluminum nitride
- circuit board
- nitride ceramic
- ceramic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
The invention discloses a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board, which comprises the following steps: etching a copper layer at a preset non-circuit position in the aluminum nitride ceramic circuit board to expose an active metal welding layer in the aluminum nitride ceramic circuit board; carrying out laser scanning treatment on the active metal welding layer; and etching the active metal welding layer subjected to the laser scanning treatment by using etching liquid to remove the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board. The invention uses the laser to be matched with the etching liquid to etch the active metal welding layer, thereby not only effectively reducing the production cost, but also greatly improving the production efficiency, more importantly, the active metal welding layer in the aluminum nitride ceramic circuit board can be thoroughly removed, thereby effectively avoiding the problem of short circuit of the aluminum nitride ceramic circuit board in the use process, and leading the aluminum nitride ceramic circuit board to meet the use requirements of later discharge test and line-to-line insulation voltage test.
Description
Technical Field
The invention relates to the field of ceramic metallization, in particular to a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board.
Background
At present, the ceramic metallization comprises the processes of LTCC (low temperature sintering copper cladding), HTCC (high temperature sintering copper cladding), DBC (direct copper cladding process), AMB (active metal welding) and the like, wherein the AMB process is a ceramic metallization scheme using active metals as welding flux, the active metals comprise silver, titanium, nickel and the like, and the silver, copper and titanium metals are common as the active welding flux. The aluminum nitride ceramic material has excellent thermal conductivity (180- & lt210 & gt W/square meter & lt K & gt) and excellent thermal expansion coefficient, so that the aluminum nitride ceramic material is widely applied to IGBT high-power modules. The metalized products made of aluminum nitride by the AMB process are widely applied to the fields of high-speed rails, wind power generation, electric vehicles and the like.
The structure of the product made of the existing aluminum nitride through the AMB process is shown in figure 1, wherein titanium nitride (containing silver, copper and other metal impurities) with the thickness of 5-10 microns is generated in the infiltration reaction process of the silver-copper-titanium alloy and the aluminum nitride ceramic, and the titanium nitride containing the impurities is difficult to remove completely, so that the aluminum nitride ceramic metalized product is short-circuited in the using process.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board, and aims to solve the problem that the metal welding layer in the aluminum nitride ceramic circuit board cannot be efficiently removed in the prior art, so that the aluminum nitride ceramic circuit board is short-circuited in the using process.
The technical scheme of the invention is as follows:
a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board comprises the following steps:
etching a copper layer at a preset non-circuit position in the aluminum nitride ceramic circuit board to expose an active metal welding layer in the aluminum nitride ceramic circuit board;
carrying out laser scanning treatment on the exposed active metal welding layer in the aluminum nitride ceramic circuit board;
and etching the active metal welding layer subjected to laser scanning treatment by using a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board is characterized in that the laser scanning treatment is selected from one of femtosecond laser scanning or picosecond laser scanning.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board is characterized in that the advancing speed of the laser scanning treatment is 5-20 m/min.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board comprises the following steps of 5-20 parts of hydrogen peroxide, 5-10 parts of nitric acid, 20-40 parts of hydrochloric acid and 20-60 parts of dissolving agent by weight.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board comprises the following steps of 10 parts of hydrogen peroxide, 8 parts of nitric acid, 30 parts of hydrochloric acid and 40 parts of dissolving agent by weight.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board is characterized in that the dissolving agent is one or more selected from hydrofluoric acid, ammonium fluoride, sodium acetate, potassium acetate, ammonium acetate and diammonium phosphate.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board comprises the steps of etching the active metal welding layer subjected to laser scanning treatment by using a prefabricated etching solution under the condition of ultrasonic waves, and removing the active metal welding layer at a non-circuit position in the aluminum nitride ceramic circuit board.
The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board is characterized in that the active metal welding layer is made of titanium nitride doped with silver and copper.
Has the advantages that: the invention provides a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board, which comprises the steps of firstly etching a copper layer at a preset non-circuit position in the aluminum nitride ceramic circuit board to expose the active metal welding layer in the aluminum nitride ceramic circuit board; then, carrying out laser scanning treatment on the exposed active metal welding layer in the aluminum nitride ceramic circuit board; and finally, etching the active metal welding layer subjected to the laser scanning treatment by adopting a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board. The invention creatively uses the laser to be matched with the etching liquid to etch the active metal welding layer, thereby not only effectively reducing the production cost, but also greatly improving the production efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a product manufactured by using the conventional aluminum nitride through an AMB process.
FIG. 2 is a flowchart illustrating a method for removing an active metal solder layer of an AlN ceramic circuit board according to a preferred embodiment of the present invention.
Detailed Description
The invention provides a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board, which is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Because the surface structure of the ceramic material is different from that of the metal material, welding cannot wet the surface of the ceramic material and cannot act with the surface of the ceramic material to form firm adhesion, so that sealing between the ceramic and the metal is a special process method, namely a metallization method, namely, a metal film is firmly adhered to the surface of the ceramic material, so that the welding between the ceramic and the metal is realized. In addition, the welding of ceramics and metal can be directly realized by using special alloy metal solder. The metallization and sealing of the ceramic are carried out by coating a layer of metal film with high conductivity and firm combination on the surface of the working part of the ceramic piece as an electrode. When the ceramic and the metal are welded together by the method, the main flow is as follows: the ceramic surface is metallized and sintered → the metal film is deposited → the solder is heated to seal the ceramic and the metal.
The prior art generally adopts an AMB process and uses active metals such as silver, titanium, nickel and the like as solder, wherein silver-copper-titanium alloy metal is the most common active solder. And the silver-copper-titanium alloy can generate titanium nitride (containing silver, copper and other metal impurities) with the thickness of 5-10 microns in the infiltration reaction process with the aluminum nitride ceramic, and the titanium nitride containing the impurities is difficult to remove cleanly, so that the aluminum nitride ceramic metalized product is short-circuited in the using process.
In order to solve the problems in the existing aluminum nitride ceramic circuit board processing technology, the invention provides a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board, wherein as shown in figure 2, the method comprises the following steps:
s10, etching the copper layer at the position of a preset non-circuit in the aluminum nitride ceramic circuit board to expose the active metal welding layer in the aluminum nitride ceramic circuit board;
s20, performing laser scanning treatment on the exposed active metal welding layer in the aluminum nitride ceramic circuit board;
and S30, etching the active metal welding layer subjected to the laser scanning treatment by adopting a prefabricated etching solution, and removing the active metal welding layer at the position of a preset non-circuit in the aluminum nitride ceramic circuit board.
In order to prevent the aluminum nitride ceramic circuit board from short circuit in the using process, the copper layer and the active metal welding layer on the non-circuit position in the aluminum nitride ceramic circuit board are generally required to be removed; the active metal welding layer can be removed to a certain degree through laser scanning or liquid medicine etching, however, the laser processing cost is very high, if a laser etching circuit is used only, the processing cost required by each 114 x 114 ceramic circuit board is more than 20 yuan according to the service life calculation of 1-3 ten thousand hours of a laser; if the etching liquid is used alone, the etching efficiency is slow, generally more than 10 minutes is needed, and the cleaning effect sometimes has a residual phenomenon, namely incomplete cleaning, and the condition of short circuit of the aluminum nitride ceramic circuit board still exists. The invention creatively uses the laser to be matched with the etching liquid to etch the active metal welding layer, thereby not only effectively reducing the production cost, but also greatly improving the production efficiency.
In some embodiments, a silver-copper-titanium alloy is taken as an example of the active welding material, and the silver-copper-titanium alloy generates a titanium nitride layer (containing silver, copper and other metal impurities) with a thickness of 5-10 microns in the infiltration reaction with the aluminum nitride ceramic, namely, generates an active metal welding layer; after the active metal welding layer is processed by laser scanning, cracks can appear in the active metal welding layer, so that etching liquid can be favorably corroded to enter, the etching efficiency is greatly increased, and the active metal welding layer can be thoroughly removed within two minutes generally.
In some embodiments, after the etching of the copper layer at the predetermined non-circuit position in the aluminum nitride ceramic circuit board is completed, the exposed active metal welding layer in the aluminum nitride ceramic circuit board is subjected to a laser scanning process, wherein the laser scanning process is selected from one of a femtosecond laser scanning or a picosecond laser scanning, but is not limited thereto. In a specific embodiment, the laser scanning treatment of the active metal weld layer is carried out with a femtosecond laser, which is a laser operating in pulses with a very short duration of only a few femtoseconds, one femtosecond being 10 times less than the minus 15 seconds, i.e. 1/1000 trillion seconds, which is several thousand times shorter than the shortest pulse obtained with electronics, which is the first characteristic of the femtosecond laser; the femtosecond laser has the second characteristic of very high instantaneous power which can reach hundreds of trillion watts and is more than one hundred times of the total power generation power worldwide; a third feature of femtosecond lasers is that they can be focused into a spatial region smaller than the diameter of the hair, with the electromagnetic field having a strength several times higher than the force of the atomic nuclei on their surrounding electrons. The laser energy of the femtosecond laser is far larger than that of nanosecond laser, and the wavelength of the femtosecond laser is tested and very suitable for bombarding the active metal welding layer.
In some embodiments, after the etching of the copper layer at the preset non-circuit position in the aluminum nitride ceramic circuit board is completed, the laser scanning treatment is carried out on the exposed active metal welding layer in the aluminum nitride ceramic circuit board by adopting a traveling speed of 5-20 m/min. In the scanning speed range, the active metal welding layer can be cracked, and the etching solution is favorable for thoroughly etching the active metal welding layer; meanwhile, the processing cost of laser scanning is saved.
In some embodiments, the formulation of the etching solution is also critical in determining whether the active metal solder layer in the aluminum nitride ceramic circuit board can be completely removed. In this embodiment, the etching solution comprises, by weight, 5 to 20 parts of hydrogen peroxide, 5 to 10 parts of nitric acid, 20 to 40 parts of hydrochloric acid, and 20 to 60 parts of a dissolving agent. In this embodiment, the hydrogen peroxide and the nitric acid are both strong oxidizers, and can oxidize impurities such as titanium nitride, silver, copper and the like into corresponding metal ions, and then the metal ions are settled down or complex ions are formed and dissolved away by a dissolving agent, so that the reaction can be accelerated, and the removal of the active metal welding layer is promoted.
In some embodiments, the etching solution includes 10 parts of hydrogen peroxide, 8 parts of nitric acid, 30 parts of hydrochloric acid, and 40 parts of a dissolving agent by weight. In some specific embodiments, the dissolving agent is selected from one or more of hydrofluoric acid, ammonium fluoride, sodium acetate, potassium acetate, ammonium acetate, and diammonium phosphate, but is not limited thereto. The chlorine ions, the ammonium ions, the fluorine ions and the like in the dissolving agent can effectively settle metal ions or form complex ions to be dissolved, so that the removal of the active metal welding layer is accelerated.
In some embodiments, the active metal welding layer subjected to the laser scanning treatment is subjected to etching treatment by using a preset etching solution under the ultrasonic condition, and the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board is removed. The ultrasonic condition is more favorable for the rapid reaction of the etching solution and the active metal welding layer, thereby efficiently removing the active metal welding layer.
The following is a further explanation of the method for removing the active metal solder layer in the aluminum nitride ceramic circuit board according to the present invention by means of specific embodiments:
example 1
A method for removing an active metal welding layer in an aluminum nitride ceramic circuit board comprises the following steps:
1) etching the copper layer at the position of a preset non-circuit in the aluminum nitride ceramic circuit board to expose the active metal welding layer in the aluminum nitride ceramic circuit board;
2) performing femtosecond laser scanning treatment on the active metal welding layer exposed out of the aluminum nitride ceramic circuit board at a traveling speed of 6 m/min;
3) and under the ultrasonic condition, etching the active metal welding layer subjected to laser scanning treatment for 2min by using a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board, wherein the etching solution comprises 8 parts by weight of hydrogen peroxide, 6 parts by weight of nitric acid, 25 parts by weight of hydrochloric acid and 30 parts by weight of ammonium fluoride.
Example 2
A method for removing an active metal welding layer in an aluminum nitride ceramic circuit board comprises the following steps:
1) etching the copper layer at the position of a preset non-circuit in the aluminum nitride ceramic circuit board to expose the active metal welding layer in the aluminum nitride ceramic circuit board;
2) carrying out picosecond laser scanning treatment on the active metal welding layer exposed out of the aluminum nitride ceramic circuit board by adopting the traveling speed of 10 m/min;
3) and under the ultrasonic condition, etching the active metal welding layer subjected to laser scanning treatment for 1min by using a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board, wherein the etching solution comprises 10 parts by weight of hydrogen peroxide, 8 parts by weight of nitric acid, 30 parts by weight of hydrochloric acid and 40 parts by weight of sodium acetate.
Example 3
A method for removing an active metal welding layer in an aluminum nitride ceramic circuit board comprises the following steps:
1) etching the copper layer at the position of a preset non-circuit in the aluminum nitride ceramic circuit board to expose the active metal welding layer in the aluminum nitride ceramic circuit board;
2) carrying out picosecond laser scanning treatment on the active metal welding layer exposed out of the aluminum nitride ceramic circuit board by adopting a travelling speed of 20 m/min;
3) and under the ultrasonic condition, etching the active metal welding layer subjected to laser scanning treatment for 1.5min by using a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board, wherein the etching solution comprises 20 parts by weight of hydrogen peroxide, 10 parts by weight of nitric acid, 35 parts by weight of hydrochloric acid and 55 parts by weight of ammonium acetate.
In summary, the present invention provides a method for removing an active metal welding layer in an aluminum nitride ceramic circuit board, which includes etching away a copper layer at a non-circuit position in the aluminum nitride ceramic circuit board to expose the active metal welding layer in the aluminum nitride ceramic circuit board; then, carrying out laser scanning treatment on the exposed active metal welding layer in the aluminum nitride ceramic circuit board; and finally, etching the active metal welding layer subjected to the laser scanning treatment by adopting a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board. The invention creatively uses the laser to be matched with the etching liquid to etch the active metal welding layer, thereby not only effectively reducing the production cost, but also greatly improving the production efficiency.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (8)
1. A method for removing an active metal welding layer in an aluminum nitride ceramic circuit board is characterized by comprising the following steps:
etching a copper layer at a preset non-circuit position in the aluminum nitride ceramic circuit board to expose an active metal welding layer in the aluminum nitride ceramic circuit board;
carrying out laser scanning treatment on the exposed active metal welding layer in the aluminum nitride ceramic circuit board;
and etching the active metal welding layer subjected to laser scanning treatment by using a prefabricated etching solution, and removing the active metal welding layer at a preset non-circuit position in the aluminum nitride ceramic circuit board.
2. The method for removing the active metal soldering layer in the aluminum nitride ceramic circuit board according to claim 1, wherein the laser scanning process is selected from one of femtosecond laser scanning or picosecond laser scanning.
3. The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board according to claim 1, wherein the traveling speed of the laser scanning process is 5-20 m/min.
4. The method for removing the active metal soldering layer in the aluminum nitride ceramic circuit board according to claim 1, wherein the etching solution comprises 5-20 parts by weight of hydrogen peroxide, 5-10 parts by weight of nitric acid, 20-40 parts by weight of hydrochloric acid and 20-60 parts by weight of a dissolving agent.
5. The method for removing the active metal solder layer in the aluminum nitride ceramic circuit board according to claim 4, wherein the etching solution comprises 10 parts by weight of hydrogen peroxide, 8 parts by weight of nitric acid, 30 parts by weight of hydrochloric acid and 40 parts by weight of a dissolving agent.
6. The method for removing the active metal solder layer in the aluminum nitride ceramic circuit board according to claim 4 or 5, wherein the dissolving agent is one or more selected from hydrofluoric acid, ammonium fluoride, sodium acetate, potassium acetate, ammonium acetate and diammonium phosphate.
7. The method for removing the active metal welding layer in the aluminum nitride ceramic circuit board according to claim 1, wherein the active metal welding layer after the laser scanning treatment is etched by using a pre-prepared etching solution under the ultrasonic condition, so as to remove the active metal welding layer at the position of the non-circuit preset in the aluminum nitride ceramic circuit board.
8. The method for removing the active metal soldering layer of the aluminum nitride ceramic circuit board according to claim 1, wherein the active metal soldering layer is made of titanium nitride doped with silver and copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910270823.9A CN110113881B (en) | 2019-04-04 | 2019-04-04 | Method for removing active metal welding layer in aluminum nitride ceramic circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910270823.9A CN110113881B (en) | 2019-04-04 | 2019-04-04 | Method for removing active metal welding layer in aluminum nitride ceramic circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110113881A CN110113881A (en) | 2019-08-09 |
| CN110113881B true CN110113881B (en) | 2022-02-18 |
Family
ID=67485234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910270823.9A Active CN110113881B (en) | 2019-04-04 | 2019-04-04 | Method for removing active metal welding layer in aluminum nitride ceramic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110113881B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175084B1 (en) * | 1995-04-12 | 2001-01-16 | Denki Kagaku Kogyo Kabushiki Kaisha | Metal-base multilayer circuit substrate having a heat conductive adhesive layer |
| JP2007324301A (en) * | 2006-05-31 | 2007-12-13 | Denki Kagaku Kogyo Kk | Method for manufacturing nitride ceramics circuit board |
| CN105537774A (en) * | 2016-02-27 | 2016-05-04 | 北京工业大学 | Oxidation film removing method based on femtosecond laser etching |
| CN108040435A (en) * | 2017-12-12 | 2018-05-15 | 北京科技大学 | A kind of aluminum nitride ceramic substrate circuit lithographic method |
-
2019
- 2019-04-04 CN CN201910270823.9A patent/CN110113881B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175084B1 (en) * | 1995-04-12 | 2001-01-16 | Denki Kagaku Kogyo Kabushiki Kaisha | Metal-base multilayer circuit substrate having a heat conductive adhesive layer |
| JP2007324301A (en) * | 2006-05-31 | 2007-12-13 | Denki Kagaku Kogyo Kk | Method for manufacturing nitride ceramics circuit board |
| CN105537774A (en) * | 2016-02-27 | 2016-05-04 | 北京工业大学 | Oxidation film removing method based on femtosecond laser etching |
| CN108040435A (en) * | 2017-12-12 | 2018-05-15 | 北京科技大学 | A kind of aluminum nitride ceramic substrate circuit lithographic method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110113881A (en) | 2019-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10756003B2 (en) | Inorganic wafer having through-holes attached to semiconductor wafer | |
| US10518353B2 (en) | Bonded functionally graded material structure for heat transfer and CTE matching and method of making same | |
| JP5160201B2 (en) | Solder material and manufacturing method thereof, joined body and manufacturing method thereof, power semiconductor module and manufacturing method thereof | |
| JP4811756B2 (en) | Method for manufacturing metal-ceramic bonding circuit board | |
| JP5376752B2 (en) | Solar cell manufacturing method and solar cell | |
| EP0463098A1 (en) | A fluxless soldering process. | |
| JP6398243B2 (en) | Power module substrate manufacturing method | |
| US20110065231A1 (en) | Process for producing a contact area of an electronic component | |
| CN115557798B (en) | AlN ceramic copper-clad substrate with firmly combined copper layer and ceramic substrate and preparation method thereof | |
| CN102732931B (en) | Method for inhibiting secondary electron emission of microwave component surface by adopting nanostructure plating layer | |
| CN110113881B (en) | Method for removing active metal welding layer in aluminum nitride ceramic circuit board | |
| CN109161890B (en) | SiO (silicon dioxide)2Micro-arc oxidation composite coating and preparation method thereof | |
| Kim et al. | Reliability of Ag nanoporous bonding joint for high temperature die attach under temperature cycling | |
| Higurashi et al. | Low-temperature solid-state bonding using hydrogen radical treated solder for optoelectronic and MEMS packaging | |
| Park et al. | A study on the fluxless soldering of Si-wafer/glass substrate using Sn-3.5 mass% Ag and Sn-37 mass% Pb solder | |
| Wang et al. | Reliability of High Density Wire Bonding in X band T/R Module | |
| Cheng et al. | Hybrid laser processes for thick silver coating fabrication on AlN substrate | |
| JP6619625B2 (en) | Electrode cleaning method and integrated circuit device manufacturing method | |
| RU2300162C1 (en) | Method for producing microwave energy output window | |
| JP2022167472A (en) | Joint body and method for producing joint body | |
| JP6918902B2 (en) | Manufacturing method of semiconductor devices | |
| JP2006021242A (en) | Laser beam machining method | |
| JP2022139923A (en) | Method for manufacturing workpiece | |
| Wang et al. | Investigation of metal contacts for silicon solar cells using laser processed 8 µm thick Al foils | |
| CN117550910A (en) | Method for preparing ceramic and metal composite substrate with assistance of laser and composite substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |