CN110112143A - A kind of high resolution A MOLED shows structure and preparation method thereof - Google Patents
A kind of high resolution A MOLED shows structure and preparation method thereof Download PDFInfo
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- CN110112143A CN110112143A CN201910353732.1A CN201910353732A CN110112143A CN 110112143 A CN110112143 A CN 110112143A CN 201910353732 A CN201910353732 A CN 201910353732A CN 110112143 A CN110112143 A CN 110112143A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 499
- 239000002184 metal Substances 0.000 claims abstract description 196
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000012044 organic layer Substances 0.000 claims abstract description 46
- 239000003990 capacitor Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- 239000011368 organic material Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 229920001621 AMOLED Polymers 0.000 description 16
- 239000004744 fabric Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Abstract
The present invention relates to microelectronics technologies, in particular to a kind of high resolution A MOLED shows structure and preparation method thereof, including TFT zone structure, the TFT zone structure includes glassy layer, the first metal layer, first insulating layer, first semiconductor layer, second insulating layer, second metal layer, third insulating layer, second semiconductor layer, third metal layer, 4th insulating layer, first organic layer, 4th metal layer, second organic layer and fifth metal layer, by being arranged the first semiconductor layer and the second semiconductor layer in different structure layer, the size of sub-pix compensation circuit design requirement can be reduced, to promote the resolution ratio of panel.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of high resolution A MOLED shows structure and its preparation side
Method.
Background technique
Active matrix organic light-emitting diode (Active-matrix organic light-emitting diode, contracting
It is written as AMOLED), as AMOLED screen quickly seizes market, how to promote AMOLED display resolution and display quality is aobvious
It obtains very urgent.Existing AMOLED compensation circuit TFT semiconductor layer is respectively positioned on same layer, and wherein OLED drives in AMOLED compensation circuit
Dynamic TFT wishes to possess suitable subthreshold swing, is conducive to adjustment AMOLED grayscale and shows and (work in linear zone), but is other
TFT wishes to possess small subthreshold swing (working in saturation region) again to realize quick Vth compensation response, and these two types of TFT are to Asia
The demand of threshold value amplitude of oscillation contradiction each other.
Summary of the invention
The technical problems to be solved by the present invention are: providing a kind of high resolution A MOLED shows structure and its preparation side
Method.
In order to solve the above-mentioned technical problem, the first technical solution that the present invention uses are as follows:
A kind of high resolution A MOLED display structure, including TFT zone structure, the TFT zone structure includes glassy layer,
Being cascading on the glass layer of the TFT zone structure has the first metal layer, the first insulating layer, the first semiconductor
Layer, second insulating layer, second metal layer, third insulating layer, the second semiconductor layer, third metal layer, the 4th insulating layer, first have
The second insulating layer of machine layer, the 4th metal layer, the second organic layer and fifth metal layer, the TFT zone structure is equipped with first
Via hole, is filled with second metal layer in first via hole, the second metal layer respectively with the TFT zone structure first
The one side of glassy layer of the semiconductor layer far from the TFT zone structure and the second insulating layer of the TFT zone structure are separate
4th insulating layer of the side face contact of the glassy layer of the TFT zone structure, the TFT zone structure is equipped with the second mistake
First organic layer in hole, the TFT zone structure is equipped with third via hole, and second via hole is opposite with the third via hole to be set
It sets and is connected to, the 4th metal layer, the 4th metal layer and the area TFT are filled in second via hole and third via hole
The side face contact of glassy layer of the third metal layer of domain structure far from the TFT zone structure.
Second of technical solution that the present invention uses are as follows:
A kind of high resolution A MOLED shows the preparation method of structure, comprising the following steps:
S1, the glassy layer of a TFT zone structure is provided, and is covered with the first metal layer on glass layer；
S2, the first insulating layer is formed, and is covered in the first metal layer surface；
S3, the first semiconductor layer is formed, and is covered in the second insulating layer surface；
S4, second insulating layer is formed, and is covered in first surface of insulating layer, form the in the second insulating layer
One via hole；
S5, second metal layer is formed in the first via hole, the second metal layer is contacted with first semiconductor layer；
S6, third insulating layer is formed, and is covered in the second metal layer surface；
S7, the second semiconductor layer is formed, and is covered in the third surface of insulating layer；
S8, third metal layer is formed, and is covered in second semiconductor layer surface；
S9, the 4th insulating layer is formed, and is covered in the third layer on surface of metal, form the in the 4th insulating layer
Two via holes；
S10, the first organic layer is formed, and is covered in the 4th surface of insulating layer, formed in first organic layer
Third via hole, the third via hole are oppositely arranged and are connected to second via hole；
S11, the 4th metal layer is formed in the second via hole and third via hole respectively, the 4th metal layer is covered in described
First organic surface and side face contact with the third metal layer far from glassy layer；
S12, the second organic layer is formed, and is covered in the 4th layer on surface of metal；
S13, fifth metal layer is formed, and is covered in second organic surface.
The beneficial effects of the present invention are:
By, to form gated sweep signal, second metal layer being arranged with shape in TFT zone structure setting the first metal layer
At data-signal, the 4th metal layer is set to form the anode of Organic Light Emitting Diode；First semiconductor layer and the second half are set
Conductor layer, and the first semiconductor layer and the second semiconductor layer are arranged in different structure layer, sub-pix compensation circuit can be reduced
The size of design requirement, to promote the resolution ratio of panel.The AMOLED of this programme design shows that structure can regulate and control TFT zone
The subthreshold swing (i.e. electric characteristics) of structure and the quick response and AMOLED grayscale of compatibility threshold voltage compensation show and adjust
Control.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that a kind of high resolution A MOLED according to the present invention shows structure；
Fig. 2 is the structural schematic diagram for the embodiment two that a kind of high resolution A MOLED according to the present invention shows structure；
Fig. 3 is the step flow chart for the preparation method that a kind of high resolution A MOLED according to the present invention shows structure；
Label declaration:
1, capacitor regions structure；
2, TFT zone structure；201, glassy layer；202, the first metal layer；203, the first insulating layer；204, the first semiconductor
Layer；205, second insulating layer；206, second metal layer；207, third insulating layer；208, the second semiconductor layer；209, third metal
Layer；210, the 4th insulating layer；211, the first organic layer；212, the 4th metal layer；213, the second organic layer；214, fifth metal
Layer；215, organic light emitting material；216, the 5th insulating layer.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained.
The most critical design of the present invention is: by the first semiconductor layer of TFT zone structure setting and the second semiconductor
Layer, and the first semiconductor layer and the setting of the second semiconductor layer can be reduced into the design of sub-pix compensation circuit in different structure layer
The size of demand, to promote the resolution ratio of panel.
Fig. 1 to Fig. 2 is please referred to, a kind of technical solution provided by the invention:
A kind of high resolution A MOLED display structure, including TFT zone structure, the TFT zone structure includes glassy layer,
Being cascading on the glass layer of the TFT zone structure has the first metal layer, the first insulating layer, the first semiconductor
Layer, second insulating layer, second metal layer, third insulating layer, the second semiconductor layer, third metal layer, the 4th insulating layer, first have
The second insulating layer of machine layer, the 4th metal layer, the second organic layer and fifth metal layer, the TFT zone structure is equipped with first
Via hole, is filled with second metal layer in first via hole, the second metal layer respectively with the TFT zone structure first
The one side of glassy layer of the semiconductor layer far from the TFT zone structure and the second insulating layer of the TFT zone structure are separate
4th insulating layer of the side face contact of the glassy layer of the TFT zone structure, the TFT zone structure is equipped with the second mistake
First organic layer in hole, the TFT zone structure is equipped with third via hole, and second via hole is opposite with the third via hole to be set
It sets and is connected to, the 4th metal layer, the 4th metal layer and the area TFT are filled in second via hole and third via hole
The side face contact of glassy layer of the third metal layer of domain structure far from the TFT zone structure.
As can be seen from the above description, the beneficial effects of the present invention are:
By, to form gated sweep signal, second metal layer being arranged with shape in TFT zone structure setting the first metal layer
At data-signal, the 4th metal layer is set to form the anode of Organic Light Emitting Diode；First semiconductor layer and the second half are set
Conductor layer, and the first semiconductor layer and the second semiconductor layer are arranged in different structure layer, sub-pix compensation circuit can be reduced
The size of design requirement, to promote the resolution ratio of panel.The AMOLED of this programme design shows that structure can regulate and control TFT zone
The subthreshold swing (i.e. electric characteristics) of structure and the quick response and AMOLED grayscale of compatibility threshold voltage compensation show and adjust
Control.
Further, the TFT zone structure further includes the 5th insulating layer, and the 5th insulating layer is arranged in the TFT
Between the third insulating layer and third metal layer of regional structure, and respectively with the second semiconductor layer of the TFT zone structure,
Third metal of the third insulating layer of TFT zone structure far from the one side of the glassy layer of TFT zone structure and TFT zone structure
Layer is close to the side face contact of the glassy layer of TFT zone structure, and the 5th insulating layer is equipped with the 4th via hole, the 4th mistake
Third metal layer is filled in hole, the second semiconductor layer of the third metal layer and the TFT zone structure is far from TFT zone
The side face contact of the glassy layer of structure.
Seen from the above description, by the way that the 5th insulating layer is arranged, it can guarantee the second semiconductor layer of TFT zone structure not
It will receive the etch effects of the third metal layer of TFT zone structure, to reduce the debugging difficulty of device property and the letter of device
Rely property preferable.
It further, further include capacitor regions structure, the capacitor regions structure includes glassy layer, in the capacitor regions
Be cascading on the glass layer of structure have the first metal layer, the first insulating layer, second insulating layer, second metal layer,
Third insulating layer, third metal layer, the 4th insulating layer, the first organic layer, the 4th metal layer, the second organic layer and fifth metal
Layer, the first insulating layer of the capacitor regions structure are equipped with the 5th via hole, in the second insulating layer of the capacitor regions structure
Equipped with the 6th via hole, the third insulating layer of the capacitor regions structure is equipped with the 7th via hole, the 5th via hole, the 6th via hole
It is oppositely arranged and is connected to the 7th via hole, third metal layer is filled in the 5th via hole, the 6th via hole and the 7th via hole,
The third metal layer and the first metal layer of the capacitor regions structure are far from the one side of the glassy layer of capacitor regions structure
Contact.
Seen from the above description, by capacitor regions structure setting the first metal layer and third metal layer to form power supply
Voltage signal.
Further, the capacitor regions structure further includes the 5th insulating layer, and the 5th insulating layer is arranged in the electricity
Between the third insulating layer and third metal layer for holding regional structure, and it is remote with the third insulating layer of the capacitor regions structure respectively
The glass of the one side of glassy layer from capacitor regions structure and the third metal layer of capacitor regions structure close to capacitor regions structure
The side face contact of glass layer, the 5th insulating layer are equipped with the 8th via hole, are filled with third metal layer in the 8th via hole.
Seen from the above description, by the way that the 5th insulating layer is arranged, it can guarantee the second semiconductor layer of capacitor regions structure
The etch effects of the third metal layer of capacitor regions structure are not will receive, to reduce the debugging difficulty of device property and device
Reliability is preferable.
Further, the first metal layer of the capacitor regions structure, second metal layer and third metal layer constitute capacitor
Three pole plates of device.
Seen from the above description, by constituting the three of capacitor by the first metal layer, second metal layer and third metal layer
A pole plate can increase the capacity of capacitor, to promote the display of panel.
Further, the second organic layer of the TFT zone structure is equipped with the 9th via hole, fills in the 9th via hole
There is an organic light emitting material, the 4th metal layer of the organic light emitting material and the TFT zone structure is far from the area TFT
The side face contact of the glassy layer of domain structure.
Seen from the above description, the shining for AMOLED in TFT zone structure setting organic light emitting material.
Referring to figure 3., another technical solution provided by the invention:
A kind of high resolution A MOLED shows the preparation method of structure, comprising the following steps:
S1, the glassy layer of a TFT zone structure is provided, and is covered with the first metal layer on glass layer；
S2, the first insulating layer is formed, and is covered in the first metal layer surface；
S3, the first semiconductor layer is formed, and is covered in the second insulating layer surface；
S4, second insulating layer is formed, and is covered in first surface of insulating layer, form the in the second insulating layer
One via hole；
S5, second metal layer is formed in the first via hole, the second metal layer is contacted with first semiconductor layer；
S6, third insulating layer is formed, and is covered in the second metal layer surface；
S7, the second semiconductor layer is formed, and is covered in the third surface of insulating layer；
S8, third metal layer is formed, and is covered in second semiconductor layer surface；
S9, the 4th insulating layer is formed, and is covered in the third layer on surface of metal, form the in the 4th insulating layer
Two via holes；
S10, the first organic layer is formed, and is covered in the 4th surface of insulating layer, formed in first organic layer
Third via hole, the third via hole are oppositely arranged and are connected to second via hole；
S11, the 4th metal layer is formed in the second via hole and third via hole respectively, the 4th metal layer is covered in described
First organic surface and side face contact with the third metal layer far from glassy layer；
S12, the second organic layer is formed, and is covered in the 4th layer on surface of metal；
S13, fifth metal layer is formed, and is covered in second organic surface.
Further, step S12 further include:
The 9th via hole is formed in second organic layer；
Organic light emitting material is formed in the 9th via hole, the organic light emitting material and the 4th metal layer are separate
The side face contact of glassy layer.
As can be seen from the above description, the shining for AMOLED in TFT zone structure setting organic light emitting material.
Please refer to Fig. 1, the embodiment of the present invention one are as follows:
A kind of high resolution A MOLED display structure, including TFT zone structure 2, the TFT zone structure 2 include glass
Layer 201, being cascading on 201 surface of glassy layer of the TFT zone structure 2 has the insulation of the first metal layer 202, first
Layer the 203, first semiconductor layer 204, second insulating layer 205, second metal layer 206, third insulating layer 207, the second semiconductor layer
208, third metal layer 209, the 4th insulating layer 210, the first organic layer 211, the 4th metal layer 212, the second organic layer 213 and
Five metal layers 214, set that there are two the first via hole, two first mistakes in the second insulating layer 205 of the TFT zone structure 2
Hole setting is arranged at 204 surface of the first semiconductor layer, is filled with second metal layer in two first via holes
206, the second metal layer 206 is respectively with the first semiconductor layer 204 of the TFT zone structure 2 far from the TFT zone knot
The second insulating layer 205 of the one side of the glassy layer 201 of structure 2 and the TFT zone structure 2 is far from the TFT zone structure 2
The side face contact of glassy layer 201, the 4th insulating layer 210 of the TFT zone structure 2 is equipped with second via hole, described
First organic layer 211 of TFT zone structure 2 is equipped with a third via hole, and second via hole is opposite with the third via hole
Setting and be connected to, be filled with the 4th metal layer 212 in second via hole and third via hole, the 4th metal layer 212 with
The side face contact of glassy layer 201 of the third metal layer 209 of the TFT zone structure 2 far from the TFT zone structure 2.
It further include capacitor regions structure 1, the capacitor regions structure 1 includes glassy layer 201, in the capacitor regions structure
Being cascading on 1 201 surface of glassy layer has the first metal layer 202, the first insulating layer 203, second insulating layer 205,
Two metal layers 206, third insulating layer 207, third metal layer 209, the 4th insulating layer 210, the first organic layer 211, the 4th metal
First insulating layer 203 of the 212, second organic layer 213 of layer and fifth metal layer 214, the capacitor regions structure 1 is equipped with one
The second insulating layer 205 of 5th via hole, the capacitor regions structure 1 is equipped with the 6th via hole, the capacitor regions structure 1
Third insulating layer 207 be equipped with the 7th via hole, the 5th via hole, the 6th via hole and the 7th via hole be oppositely arranged and even
It is logical, be filled with third metal layer 209 in the 5th via hole, the 6th via hole and the 7th via hole, the third metal layer 209 with
The side face contact of glassy layer 201 of the first metal layer 202 of the capacitor regions structure 1 far from capacitor regions structure 1.
The first metal layer 202, second metal layer 206 and the third metal layer 209 of the capacitor regions structure 1 constitute capacitor
Three pole plates of device.
Traditional capacitor is made of two pole plates of capacitor the first metal layer and second metal layer.
Second organic layer 213 of the TFT zone structure 2 is equipped with the 9th via hole, has in the 9th via hole
4th metal layer 212 of machine luminous material layer 215, the organic light emitting material 215 and the TFT zone structure 2 is far from institute
State the side face contact of the glassy layer 201 of TFT zone structure 2.
The first metal layer 202 of the TFT zone structure 2 is to form gated sweep signal, the TFT zone structure 2
Second metal layer 206 to form data-signal, the 4th metal layer 212 of the TFT zone structure 2 is to form organic hair
The anode of optical diode, the first metal layer 202 and third metal layer 209 of the capacitor regions structure 1 are to form power supply
Voltage signal.
Referring to figure 2., the embodiment of the present invention two are as follows:
Embodiment two and the difference of embodiment one are: the TFT zone structure 2 further includes the 5th insulating layer 216, described
5th insulating layer 216 is arranged between the third insulating layer 207 and third metal layer 209 of the TFT zone structure 2, and respectively
With the second semiconductor layer 208 of the TFT zone structure 2, TFT zone structure 2 third insulating layer 207 far from TFT zone knot
The glassy layer of the one side of the glassy layer 201 of structure 2 and the third metal layer 209 of TFT zone structure 2 close to TFT zone structure 2
201 side face contact, the 5th insulating layer 216 are equipped with the 4th via hole, are filled with third metal in the 4th via hole
Second semiconductor layer 208 of layer 209, the third metal layer 209 and the TFT zone structure 2 is far from TFT zone structure 2
The side face contact of glassy layer 201.
The capacitor regions structure 1 further includes the 5th insulating layer 216, and the 5th insulating layer 216 is arranged in the capacitor
Between the third insulating layer 207 and third metal layer 209 of regional structure 1, and it is exhausted with the third of the capacitor regions structure 1 respectively
The one side of glassy layer 201 of the edge layer 207 far from capacitor regions structure 1 and the third metal layer 209 of capacitor regions structure 1 are close
The side face contact of the glassy layer 201 of capacitor regions structure 1, the 5th insulating layer 216 be equipped with the 8th via hole, the described 8th
Third metal layer 209 is filled in via hole.
Referring to figure 3., the embodiment of the present invention three are as follows:
A kind of high resolution A MOLED shows the preparation method of structure, comprising the following steps:
S1, the glassy layer 201 of a TFT zone structure 2 is provided, and is covered with the first metal layer on 201 surface of glassy layer
202；
S2, the first insulating layer 203 is formed, and is covered in 202 surface of the first metal layer；
S3, the first semiconductor layer 204 is formed, and is covered in 205 surface of second insulating layer；
S4, second insulating layer 205 is formed, and is covered in 203 surface of the first insulating layer, in the second insulating layer
The first via hole is formed in 205；
S5, second metal layer 206, the second metal layer 206 and first semiconductor layer are formed in the first via hole
204 contacts；
S6, third insulating layer 207 is formed, and is covered in 206 surface of second metal layer；
S7, the second semiconductor layer 208 is formed, and is covered in 207 surface of third insulating layer；
S8, third metal layer 209 is formed, and is covered in 208 surface of the second semiconductor layer；
S9, the 4th insulating layer 210 is formed, and is covered in 209 surface of third metal layer, in the 4th insulating layer
The second via hole is formed in 210；
S10, the first organic layer 211 is formed, and is covered in 210 surface of the 4th insulating layer, in first organic layer
Third via hole is formed in 211, the third via hole is oppositely arranged and is connected to second via hole；
S11, the 4th metal layer 212, the 4th metal layer 212 covering are formed in the second via hole and third via hole respectively
In 211 surface of the first organic layer and side face contact with the third metal layer 209 far from glassy layer 201；
S12, the second organic layer 213 is formed, and is covered in 212 surface of the 4th metal layer；
S13, fifth metal layer 214 is formed, and is covered in 213 surface of the second organic layer.
Step S12 further include:
The 9th via hole is formed in second organic layer 213；
Organic light emitting material 215, the organic light emitting material 215 and the 4th metal are formed in the 9th via hole
The 212 side face contact far from glassy layer 201 of layer.
In actual process applies, the glass of the glassy layer 201 of the TFT zone structure 2 and the capacitor regions structure 1
Layer 201 is the same layer glassy layer for being distributed in different zones；
The first metal layer 202 of the TFT zone structure 2 and the first metal layer 202 of the capacitor regions structure 1 are point
Same layer the first metal layer of the cloth in different zones；
First insulating layer 203 of the TFT zone structure 2 and the first insulating layer 203 of the capacitor regions structure 1 are point
Same layer first insulating layer of the cloth in different zones；
First semiconductor layer 204 of the first semiconductor layer 204 and the capacitor regions structure 1 of the TFT zone structure 2
For the first semiconductor layer of same layer for being distributed in different zones；
The second insulating layer 205 of the second insulating layer 205 of the TFT zone structure 2 and the capacitor regions structure 1 is point
Same layer second insulating layer of the cloth in different zones；
The second metal layer 206 of the second metal layer 206 of the TFT zone structure 2 and the capacitor regions structure 1 is point
Same layer second metal layer of the cloth in different zones；
The third insulating layer 207 of the TFT zone structure 2 and the third insulating layer 207 of the capacitor regions structure 1 are point
Same layer third insulating layer of the cloth in different zones；
Second semiconductor layer 208 of the second semiconductor layer 208 and the capacitor regions structure 1 of the TFT zone structure 2
For the second semiconductor layer of same layer for being distributed in different zones；
The third metal layer 209 of the TFT zone structure 2 and the third metal layer 209 of the capacitor regions structure 1 are point
Same layer third metal layer of the cloth in different zones；
4th insulating layer 210 of the TFT zone structure 2 and the 4th insulating layer 210 of the capacitor regions structure 1 are point
Same layer fourth insulating layer of the cloth in different zones；
First organic layer 211 of the TFT zone structure 2 and the first organic layer 211 of the capacitor regions structure 1 are point
Same layer first organic layer of the cloth in different zones；
4th metal layer 212 of the TFT zone structure 2 and the 4th metal layer 212 of the capacitor regions structure 1 are point
Same layer fourth metal layer of the cloth in different zones；
Second organic layer 213 of the TFT zone structure 2 and the second organic layer 213 of the capacitor regions structure 1 are point
Same layer second organic layer of the cloth in different zones；
The fifth metal layer 214 of the fifth metal layer 214 of the TFT zone structure 2 and the capacitor regions structure 1 is point
Same layer fifth metal layer of the cloth in different zones；
5th insulating layer 216 of the TFT zone structure 2 and the 5th insulating layer 216 of the capacitor regions structure 1 are point
Same layer fiveth insulating layer of the cloth in different zones.
In conclusion a kind of high resolution A MOLED provided by the invention shows structure and preparation method thereof, by TFT
The first metal layer is arranged to form gated sweep signal in regional structure, second metal layer is arranged to form data-signal, setting the
Four metal layers are to form the anode of Organic Light Emitting Diode；First semiconductor layer and the second semiconductor layer be set, and by the first half
Conductor layer and the second semiconductor layer are arranged in different structure layer, can reduce the size of sub-pix compensation circuit design requirement, from
And promote the resolution ratio of panel.The AMOLED of this programme design shows that structure can regulate and control the subthreshold swing of TFT zone structure
The quick response and AMOLED grayscale of (i.e. electric characteristics) and compatibility threshold voltage compensation show regulation.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (8)
1. a kind of high resolution A MOLED shows structure, including TFT zone structure, which is characterized in that the TFT zone structure packet
Include glassy layer, be cascading on the glass layer of the TFT zone structure have the first metal layer, the first insulating layer,
First semiconductor layer, second insulating layer, second metal layer, third insulating layer, the second semiconductor layer, third metal layer, the 4th are absolutely
Edge layer, the first organic layer, the 4th metal layer, the second organic layer and fifth metal layer, the second insulating layer of the TFT zone structure
Be equipped with the first via hole, be filled with second metal layer in first via hole, the second metal layer respectively with the TFT zone
The second of the one side of glassy layer of first semiconductor layer of structure far from the TFT zone structure and the TFT zone structure
The side face contact of glassy layer of the insulating layer far from the TFT zone structure is set on the 4th insulating layer of the TFT zone structure
There is the second via hole, the first organic layer of the TFT zone structure is equipped with third via hole, second via hole and the third mistake
Hole is oppositely arranged and is connected to, in second via hole and third via hole be filled with the 4th metal layer, the 4th metal layer with
The side face contact of glassy layer of the third metal layer of the TFT zone structure far from the TFT zone structure.
2. high resolution A MOLED according to claim 1 shows structure, which is characterized in that the TFT zone structure is also
Including the 5th insulating layer, the 5th insulating layer be arranged in the TFT zone structure third insulating layer and third metal layer it
Between, and respectively with the second semiconductor layer of the TFT zone structure, TFT zone structure third insulating layer far from TFT zone knot
The one side of the glassy layer of structure and the third metal layer of TFT zone structure connect close to the one side of the glassy layer of TFT zone structure
Touching, the 5th insulating layer are equipped with the 4th via hole, are filled with third metal layer, the third metal layer in the 4th via hole
The second semiconductor layer with the TFT zone structure is far from the side face contact of the glassy layer of TFT zone structure.
3. high resolution A MOLED according to claim 1 shows structure, which is characterized in that further include capacitor regions knot
Structure, the capacitor regions structure includes glassy layer, and being cascading on the glass layer of the capacitor regions structure has
The first metal layer, the first insulating layer, second insulating layer, second metal layer, third insulating layer, third metal layer, the 4th insulating layer,
First organic layer, the 4th metal layer, the second organic layer and fifth metal layer are set on the first insulating layer of the capacitor regions structure
There is the 5th via hole, the second insulating layer of the capacitor regions structure is equipped with the 6th via hole, the third of the capacitor regions structure
Insulating layer is equipped with the 7th via hole, and the 5th via hole, the 6th via hole and the 7th via hole are oppositely arranged and are connected to, the 5th mistake
Third metal layer, the third metal layer and the capacitor regions structure are filled in hole, the 6th via hole and the 7th via hole
The side face contact of glassy layer of the first metal layer far from capacitor regions structure.
4. high resolution A MOLED according to claim 3 shows structure, which is characterized in that the capacitor regions structure is also
Including the 5th insulating layer, the 5th insulating layer be arranged in the capacitor regions structure third insulating layer and third metal layer it
Between, and respectively the third insulating layer with the capacitor regions structure far from the one side of the glassy layer of capacitor regions structure and capacitor
Close to the side face contact of the glassy layer of capacitor regions structure, the 5th insulating layer is equipped with the third metal layer of regional structure
8th via hole is filled with third metal layer in the 8th via hole.
5. showing structure according to high resolution A MOLED as claimed in any one of claims 3 to 4, which is characterized in that the capacitor
The first metal layer, second metal layer and the third metal layer of regional structure constitute three pole plates of capacitor.
6. high resolution A MOLED according to claim 1 shows structure, which is characterized in that the TFT zone structure
Second organic layer is equipped with the 9th via hole, is filled with organic light emitting material, the luminous organic material in the 9th via hole
Layer is with the 4th metal layer of the TFT zone structure far from the side face contact of the glassy layer of the TFT zone structure.
7. the preparation method that a kind of high resolution A MOLED described in claim 1 shows structure, which is characterized in that including following
Step:
S1, the glassy layer of a TFT zone structure is provided, and is covered with the first metal layer on glass layer；
S2, the first insulating layer is formed, and is covered in the first metal layer surface；
S3, the first semiconductor layer is formed, and is covered in the second insulating layer surface；
S4, second insulating layer is formed, and is covered in first surface of insulating layer, form the first mistake in the second insulating layer
Hole；
S5, second metal layer is formed in the first via hole, the second metal layer is contacted with first semiconductor layer；
S6, third insulating layer is formed, and is covered in the second metal layer surface；
S7, the second semiconductor layer is formed, and is covered in the third surface of insulating layer；
S8, third metal layer is formed, and is covered in second semiconductor layer surface；
S9, the 4th insulating layer is formed, and is covered in the third layer on surface of metal, form the second mistake in the 4th insulating layer
Hole；
S10, the first organic layer is formed, and is covered in the 4th surface of insulating layer, form third in first organic layer
Via hole, the third via hole are oppositely arranged and are connected to second via hole；
S11, the 4th metal layer is formed in the second via hole and third via hole respectively, the 4th metal layer is covered in described first
Organic surface and side face contact with the third metal layer far from glassy layer；
S12, the second organic layer is formed, and is covered in the 4th layer on surface of metal；
S13, fifth metal layer is formed, and is covered in second organic surface.
8. the preparation method that high resolution A MOLED according to claim 7 shows structure, which is characterized in that step S12
Further include:
The 9th via hole is formed in second organic layer；
Organic light emitting material is formed in the 9th via hole, the organic light emitting material and the 4th metal layer are far from glass
The side face contact of layer.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110304060A1 (en) * | 2010-06-09 | 2011-12-15 | Beijing Boe Optoelectronics Technology Co., Ltd. | Metal thin film connection structure, manufacturing method thereof and array substrate |
| CN109285871A (en) * | 2018-10-18 | 2019-01-29 | 福建华佳彩有限公司 | AMOLED for shielding lower fingerprint recognition shows structure and preparation method thereof |
| CN109300963A (en) * | 2018-10-18 | 2019-02-01 | 福建华佳彩有限公司 | Structure and preparation method thereof is shown based on the AMOLED for shielding lower fingerprint recognition |
| CN109346459A (en) * | 2018-10-18 | 2019-02-15 | 福建华佳彩有限公司 | The capacitance structure of AMOLED compensation circuit and its method for improving of capacity |
| CN109494256A (en) * | 2018-10-18 | 2019-03-19 | 福建华佳彩有限公司 | A kind of bigrid TFT device architecture and preparation method thereof |
| CN209880620U (en) * | 2019-04-29 | 2019-12-31 | 福建华佳彩有限公司 | TFT structure of high resolution display |
-
2019
- 2019-04-29 CN CN201910353732.1A patent/CN110112143B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110304060A1 (en) * | 2010-06-09 | 2011-12-15 | Beijing Boe Optoelectronics Technology Co., Ltd. | Metal thin film connection structure, manufacturing method thereof and array substrate |
| CN109285871A (en) * | 2018-10-18 | 2019-01-29 | 福建华佳彩有限公司 | AMOLED for shielding lower fingerprint recognition shows structure and preparation method thereof |
| CN109300963A (en) * | 2018-10-18 | 2019-02-01 | 福建华佳彩有限公司 | Structure and preparation method thereof is shown based on the AMOLED for shielding lower fingerprint recognition |
| CN109346459A (en) * | 2018-10-18 | 2019-02-15 | 福建华佳彩有限公司 | The capacitance structure of AMOLED compensation circuit and its method for improving of capacity |
| CN109494256A (en) * | 2018-10-18 | 2019-03-19 | 福建华佳彩有限公司 | A kind of bigrid TFT device architecture and preparation method thereof |
| CN209880620U (en) * | 2019-04-29 | 2019-12-31 | 福建华佳彩有限公司 | TFT structure of high resolution display |
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