CN110109293A - The manufacturing method of the inorganic orientation film of liquid crystal - Google Patents
The manufacturing method of the inorganic orientation film of liquid crystal Download PDFInfo
- Publication number
- CN110109293A CN110109293A CN201910270034.5A CN201910270034A CN110109293A CN 110109293 A CN110109293 A CN 110109293A CN 201910270034 A CN201910270034 A CN 201910270034A CN 110109293 A CN110109293 A CN 110109293A
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- manufacturing
- film layer
- solution
- baking procedure
- yttrium
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
Abstract
The present invention discloses a kind of manufacturing method of inorganic orientation film of liquid crystal, comprising: mixes step, including lanthanum nitrate hexahydrate, yttrium nitrate solution and strontium nitrate solution is placed into a container, and be stirred the solution up to one section of mixing time；Stand reaction step, including by the solution left standstill after being stirred up to one section of time of repose so that the solution reaction generate include lanthanum yttrium strontium oxygen and nitric anhydride orientation solution；Application step, including by the orientation solution coating to the surface of an indium tin oxide layer with formed one include lanthanum yttrium strontium oxygen and nitric anhydride film layer；And baking procedure, including being toasted the crystallization of lanthanum yttrium strontium oxygen and the formation inorganic orientation film of one liquid crystal so that in the film layer to the film layer.The inorganic orientation film of liquid crystal manufactured by manufacturing method of the present invention while dielectric constant with higher and wider band gap.
Description
Technical field
The invention relates to a kind of manufacturing method of the inorganic orientation film of liquid crystal, orientation solution needed for preparation process
Preparation method it is simple, performance stablize.
Background technique
Compared with organic material, inorganic material is as the advantage of both alignment layers: because inorganic material capacitance is low to have
There is very low threshold voltage, so that the energy needed during driving is small.In these inorganic material, strontium oxide strontia (SrO)
With very high dielectric constant, relatively narrow band gap and low breakdown voltage；Therefore lanthanum (La) and yttrium are just added wherein
(Y), because it is with relatively large band gap and high breakdown voltage so that strontium oxide strontia (SrO) obtain simultaneously it is higher
Dielectric constant and wider band gap.Bing and multi-component material have more outstanding filming performance.
The advantage of solwution method is that lanthanum (La), yttrium (Y), the component ratio of strontium oxide strontia (SrO) are adjustable, and shape after annealing
At crystalline membrane and liquid crystal between there is stronger Van der Waals force (Van der Waals force), do not need to carry out special
Allocating process.
Therefore, it is necessary to a kind of manufacturing method of inorganic orientation film of liquid crystal is provided, to solve to ask present in the prior art
Topic.
Summary of the invention
In view of this, the present invention provides a kind of manufacturing method of inorganic orientation film, orientation needed for preparation process is molten
The preparation method of liquid is simple, and performance is stablized, and solves the problems of prior art whereby.
The main purpose of the present invention is to provide a kind of manufacturing methods of the inorganic orientation film of liquid crystal, comprising:
Step is mixed, including by lanthanum nitrate (La (NO3)3) solution, yttrium nitrate (Y (NO3)3) solution and strontium nitrate (Sr
(NO3)2) solution is placed into a container, and is stirred the lanthanum nitrate (La (NO3)3) solution, the yttrium nitrate (Y
(NO3)3) solution and the strontium nitrate (Sr (NO3)2) solution is up to one section of mixing time；
Reaction step is stood, including by (La (the NO of the lanthanum nitrate after being stirred3)3) solution, yttrium nitrate (Y (NO3)3) molten
Liquid and strontium nitrate (Sr (NO3)2) solution left standstill is up to one section of time of repose, so that the lanthanum nitrate (La (NO3)3) solution, institute
State yttrium nitrate (Y (NO3)3) solution and the strontium nitrate (Sr (NO3)2) solution reaction generate include lanthanum yttrium strontium oxygen
(LaYSr3O6) and nitric anhydride (N2O5) orientation solution；
Application step, including by the orientation solution coating a to tin indium oxide (Indium Tin Oxide, ITO) layer
Include lanthanum yttrium strontium oxygen (LaYSr on surface to form one3O6) and nitric anhydride (N2O5) film layer；And
Baking procedure, including being toasted the lanthanum yttrium strontium oxygen (LaYSr so that in the film layer to the film layer3O6) crystallization
And form the inorganic orientation film of a liquid crystal.
In an embodiment of the present invention, it is executed under conditions of the mixing step is at least 75 degree Celsius.
In an embodiment of the present invention, the mixing time of the mixing step is at least 2 hours.
In an embodiment of the present invention, the standing reaction step is to carry out in air, and the standing reaction step
In the time of repose be at least 24 hours.
In an embodiment of the present invention, the application step is carried out in a manner of using spin coating.
In an embodiment of the present invention, the baking procedure includes main baking procedure, and the main baking procedure is Celsius
The film layer is toasted under conditions of 400 to 800 degree.
In an embodiment of the present invention, the main baking procedure is to toast the film layer under conditions of 500 degree Celsius.
In an embodiment of the present invention, the main baking procedure includes toasting the film layer to be at least up to 3 hours.
In an embodiment of the present invention, the baking procedure includes previously baked step and main baking procedure；It is described pre-
First baking procedure is that the film layer is toasted under conditions of at least 100° centigrade；The main baking procedure is in the preparatory baking
It is executed after roasting step, and is to toast the film layer under conditions of 500 degree Celsius.
In an embodiment of the present invention, the previously baked step includes toasting the film layer to be at least up to 5 minutes；The master
Baking procedure includes toasting the film layer to be at least up to 3 hours.
Compared with prior art, the inorganic orientation of liquid crystal manufactured by the manufacturing method of the inorganic orientation film of the present invention is thin
Film while dielectric constant with higher and wider band gap.Compared with the inorganic orientation film of the prior art, the present invention is inorganic
Van der Waals force between the inorganic orientation film of liquid crystal prepared by the manufacturing method of orientation film and liquid crystal is strong, is not necessarily to special orientation
Processing procedure.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, cooperates institute's accompanying drawings, makees detailed
Carefully it is described as follows:
Detailed description of the invention
Indium tin oxide layer Fig. 1 of the invention and the thereon side sectional view of film layer.
Fig. 2 is the step flow chart of the manufacturing method of the inorganic orientation film of liquid crystal of the present invention.
Fig. 3 is another flow chart of steps of the manufacturing method of the inorganic orientation film of liquid crystal of the present invention.
Specific embodiment
Please refer to Fig. 1 and Fig. 2, the manufacturing method of the inorganic orientation film of liquid crystal of the present invention, comprising: mix step S01, stand
Reaction step S02, application step S03 and baking procedure S04.
The mixing step S01, including by lanthanum nitrate (La (NO3)3) solution, yttrium nitrate (Y (NO3)3) solution and nitre
Sour strontium (Sr (NO3)2) solution is placed into a container, and is stirred the lanthanum nitrate (La (NO3)3) solution, the nitric acid
Yttrium (Y (NO3)3) solution and the strontium nitrate (Sr (NO3)2) solution is up to one section of mixing time.In an embodiment of the present invention,
It is executed under conditions of the mixing step is at least 75 degree Celsius.In an embodiment of the present invention, the mixing step
The mixing time is at least 2 hours.
The standing reaction step S02, including by (La (the NO of the lanthanum nitrate after being stirred3)3) solution, yttrium nitrate (Y
(NO3)3) solution and strontium nitrate (Sr (NO3)2) solution left standstill is up to one section of time of repose, so that the lanthanum nitrate (La (NO3)3)
Solution, the yttrium nitrate (Y (NO3)3) solution and the strontium nitrate (Sr (NO3)2) solution reaction generate include lanthanum yttrium strontium oxygen
(LaYSr3O6) and nitric anhydride (N2O5) orientation solution.In an embodiment of the present invention, the standing reaction step S02 be
It is carried out in air, and the time of repose stood in reaction step S02 is at least 24 hours.The chemistry of the reaction is anti-
Answer formula as follows: La (NO3)3+Y(NO3)3+3Sr(NO3)2=LaYSr3O6+6N2O5, lanthanum yttrium strontium oxygen (LaYSr is obtained after reaction3O6)
And nitric anhydride (N2O5) solution.
The application step S03, including by the orientation solution coating a to tin indium oxide (Indium Tin Oxide,
It ITO include) lanthanum yttrium strontium oxygen (LaYSr to form one on the surface of layer 103O6) and nitric anhydride (N2O5) film layer 20.In the present invention
In one embodiment, the application step S03 is carried out in a manner of using spin coating.
The baking procedure S04, including being toasted the lanthanum yttrium strontium oxygen so that in the film layer 20 to the film layer 20
(LaYSr3O6) crystallize and form the inorganic orientation film of a liquid crystal.
Referring to figure 3., in an embodiment of the present invention, the baking procedure S04 includes main baking procedure S042, the master
Baking procedure S042 is to toast the film layer 20 under conditions of Celsius 400 to 800 degree.Preferably, the main baking procedure
S042 is that the film layer 20 is toasted under conditions of 500 degree Celsius.In an embodiment of the present invention, the main baking procedure S042
It is at least up to 3 hours including toasting the film layer 20.
Referring to figure 3., in an alternative embodiment of the invention, the baking procedure S04 include previously baked step S041 with
And main baking procedure S042；The previously baked step S041 toasts the film under conditions of being included at least 100° centigrade
Layer 20；The main baking procedure S042 is executed after being included in the previously baked step S041, and is Celsius 400 to 800
The film layer 20 is toasted under conditions of degree.Preferably, the main baking procedure S042 are under conditions of Celsius 400 to 800 degree
Toast the film layer 20.The previously baked step S041 includes toasting the film layer 20 to be at least up to 5 minutes；The main baking step
Rapid S042 includes toasting the film layer 20 to be at least up to 3 hours.Better, the main baking procedure S042 is at 500 degree Celsius
Under the conditions of toast the film layer 20.
Compared with prior art, the inorganic orientation of liquid crystal manufactured by the manufacturing method of the inorganic orientation film of the present invention is thin
Film while dielectric constant with higher and wider band gap.Compared with the inorganic orientation film of the prior art, the present invention is inorganic
Van der Waals force between the inorganic orientation film of liquid crystal prepared by the manufacturing method of orientation film and liquid crystal is strong, is not necessarily to special orientation
Processing procedure.
Claims (10)
1. a kind of manufacturing method of the inorganic orientation film of liquid crystal, which is characterized in that the manufacturing method includes:
Step is mixed, including lanthanum nitrate hexahydrate, yttrium nitrate solution and strontium nitrate solution are placed into a container, and is stirred
The mixing lanthanum nitrate hexahydrate, the yttrium nitrate solution and the strontium nitrate solution are mixed up to one section of mixing time；
Reaction step is stood, including reaching the lanthanum nitrate hexahydrate after being stirred, yttrium nitrate solution and strontium nitrate solution standing
One section of time of repose, so that the lanthanum nitrate hexahydrate, the yttrium nitrate solution and strontium nitrate solution reaction generate and include
The orientation solution of lanthanum yttrium strontium oxygen and nitric anhydride；
Application step, including lanthanum yttrium strontium oxygen will be included to form one in the orientation solution coating to the surface of an indium tin oxide layer
And the film layer of nitric anhydride；And
Baking procedure, including the film layer is toasted so that in the film layer lanthanum yttrium strontium oxygen crystallization and formed a liquid crystal without
Machine orientation film.
2. manufacturing method as described in claim 1, it is characterised in that: in the mixing step be in 75 degree of item at least Celsius
It is executed under part.
3. manufacturing method as described in claim 1, it is characterised in that: the mixing time of the mixing step is at least 2
Hour.
4. manufacturing method as described in claim 1, it is characterised in that: the standing reaction step be carry out in air, and
The time of repose in the standing reaction step is at least 24 hours.
5. manufacturing method as described in claim 1, it is characterised in that: the application step is carried out in a manner of using spin coating.
6. manufacturing method as described in claim 1, it is characterised in that: the baking procedure includes main baking procedure, the master
Baking procedure is to toast the film layer under conditions of Celsius 400 to 800 degree.
7. manufacturing method as claimed in claim 6, it is characterised in that: the main baking procedure is in 500 degree of condition Celsius
The lower baking film layer.
8. manufacturing method as claimed in claim 7, it is characterised in that: the main baking procedure includes toasting the film layer at least
Up to 3 hours.
9. manufacturing method as described in claim 1, it is characterised in that: the baking procedure includes previously baked step and master
Baking procedure；The previously baked step is that the film layer is toasted under conditions of at least 100° centigrade；The main baking procedure
It is to be executed after the previously baked step, and is to toast the film layer under conditions of 500 degree Celsius.
10. manufacturing method as claimed in claim 9, it is characterised in that: the previously baked step includes toasting the film layer
At least up to 5 minutes；The main baking procedure includes toasting the film layer to be at least up to 3 hours.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910270034.5A CN110109293A (en) | 2019-04-04 | 2019-04-04 | The manufacturing method of the inorganic orientation film of liquid crystal |
| PCT/CN2019/082628 WO2020199244A1 (en) | 2019-04-04 | 2019-04-15 | Method for manufacturing liquid crystal inorganic alignment thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910270034.5A CN110109293A (en) | 2019-04-04 | 2019-04-04 | The manufacturing method of the inorganic orientation film of liquid crystal |
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| Publication Number | Publication Date |
|---|---|
| CN110109293A true CN110109293A (en) | 2019-08-09 |
Family
ID=67485074
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| CN201910270034.5A Pending CN110109293A (en) | 2019-04-04 | 2019-04-04 | The manufacturing method of the inorganic orientation film of liquid crystal |
Country Status (2)
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| CN (1) | CN110109293A (en) |
| WO (1) | WO2020199244A1 (en) |
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| WO2020199244A1 (en) | 2020-10-08 |
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