CN110109039B - Method and system for regulating tunneling magneto-resistance sensor - Google Patents
Method and system for regulating tunneling magneto-resistance sensor Download PDFInfo
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- CN110109039B CN110109039B CN201910406376.5A CN201910406376A CN110109039B CN 110109039 B CN110109039 B CN 110109039B CN 201910406376 A CN201910406376 A CN 201910406376A CN 110109039 B CN110109039 B CN 110109039B
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Abstract
The application discloses a method for regulating and controlling a tunneling magneto-resistance sensor, which comprises the following steps: loading a voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor, wherein the voltage is a variable voltage provided by an adjustable power supply; and adjusting the voltage value between the bottom electrode and the top electrode so as to regulate and control the measuring range and the sensitivity of the tunneling magneto-resistance sensor. The method loads voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor based on an adjustable power supply, changes the coupling coefficient of the interface vertical anisotropy of a magnetic tunnel junction in the tunneling magneto-resistance sensor by adjusting an applied voltage value, can adjust the interface vertical anisotropy performance through the coupling coefficient, and further adjusts the magnetic anisotropy performance of the magnetic tunnel junction, so that the sensitivity and the linear region of the tunneling magneto-resistance sensor are correspondingly adjusted and controlled, an additional compensation circuit is not needed, and the overall complexity of a magnetic detection system is reduced. Correspondingly, the application also discloses a regulation and control system of the tunneling magneto-resistance sensor.
Description
Technical Field
The application relates to the field of semiconductors, in particular to a method and a system for regulating a tunneling magneto-resistance sensor.
Background
Weak magnetic detection is an important component of modern detection technology in the 21 st century. Weak magnetic detection technology is in the fields of military affairs, resource exploration, space environment detection and other scientific research. The weak magnetic detection system generally comprises a magnetic sensor, a signal conditioning module, a signal acquisition module and a signal analysis module. The magnetic sensor is used for converting a magnetic field signal into an electric signal, the sensitivity of the magnetic sensor determines the detection precision of the whole system, and the saturation magnetic field of the magnetic sensor determines the detection range of the whole system.
Generally, magnetic detection systems based on different magnetic sensors are selected for different magnetic field environments and detection accuracy, so that the magnetic detection systems are various, and therefore, in some application loads, multiple magnetic detection systems need to be equipped.
Based on the above, a sensor with adjustable measuring range and sensitivity is provided to meet the requirements of different magnetic field environments and detection accuracy, and becomes a popular research direction. At present, after the sensor is manufactured and molded, the sensitivity and the range of the sensor are fixed, and compensation operation is generally carried out on a circuit part such as an operational amplifier, and the like, so that the overall complexity of a magnetic detection system is increased.
Disclosure of Invention
In view of this, the present application provides a method for adjusting and controlling a tunneling magnetoresistive sensor, which realizes a tunneling magnetoresistive sensor with adjustable linear range and sensitivity by applying a voltage, and a magnetic detection system based on the device can flexibly change the sensitivity and the magnetic field detection range of the system, thereby meeting the magnetic field detection requirements under different environments. Correspondingly, the application also provides a regulation and control system of the tunneling magneto-resistance sensor.
The application provides a regulation and control method of a tunneling magneto-resistance sensor, wherein the tunneling magneto-resistance sensor comprises a substrate, a bottom electrode, a magnetic tunnel junction, an insulating medium layer and a top electrode, wherein the bottom electrode, the magnetic tunnel junction, the insulating medium layer and the top electrode are positioned on the substrate; the method comprises the following steps:
loading a voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor, wherein the voltage is a variable voltage provided by an adjustable power supply;
and adjusting the voltage value between the bottom electrode and the top electrode so as to regulate and control the measuring range and the sensitivity of the tunneling magneto-resistance sensor.
Optionally, the adjustable power supply is a continuous adjustable voltage source, and the continuous adjustable voltage source provides a voltage with a voltage value in a first interval;
the adjusting the voltage value between the bottom electrode and the top electrode comprises:
determining a target voltage value corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the voltage, the measuring range and the sensitivity, wherein the target voltage value is positioned in the first interval;
and adjusting the voltage value between the bottom electrode and the top electrode to be the target voltage value, so that the measuring range and the sensitivity of the tunneling magneto-resistance sensor are respectively a target measuring range and a target sensitivity.
Optionally, the determining, according to the correspondence between the voltage, the measurement range, and the sensitivity, a target voltage value corresponding to the target measurement range and the target sensitivity includes:
determining target magnetic anisotropy energy density corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the magnetic anisotropy energy density and the measuring range and the sensitivity;
and determining a target voltage value corresponding to the target magnetic anisotropy energy density according to the corresponding relation between the magnetic anisotropy energy density and the voltage.
Optionally, the adjustable power supply is a discontinuous adjustable voltage source, the discontinuous adjustable voltage source provides voltages of N voltage values for selection, and N is a positive integer greater than 1;
the adjusting the voltage value between the bottom electrode and the top electrode comprises:
adjusting a voltage value between the bottom electrode and the top electrode to one of the N voltage values.
Optionally, a voltage value between the bottom electrode and the top electrode is not lower than a reverse critical voltage, where the reverse critical voltage is a reverse voltage when the magnetic anisotropy energy density is zero.
This application provides a regulation and control system of tunneling magneto-resistance sensor in one aspect, the system includes tunneling magneto-resistance sensor, adjustable power and controller, tunneling magneto-resistance sensor includes the substrate, is located bottom electrode, magnetic tunnel junction, insulating medium layer and top electrode above the substrate, wherein:
the magneto-resistance sensor is used for acquiring magnetic signals and converting the magnetic signals into electric signals;
the adjustable power supply is used for providing variable voltage;
the controller is used for loading voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor and adjusting the voltage value between the bottom electrode and the top electrode so as to regulate and control the measuring range and the sensitivity of the tunneling magneto-resistance sensor.
Optionally, the adjustable power supply is a continuous adjustable voltage source, and the continuous adjustable voltage source provides a voltage with a voltage value in a first interval;
the controller is specifically configured to:
determining a target voltage value corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the voltage, the measuring range and the sensitivity, wherein the target voltage value is positioned in the first interval;
and adjusting the voltage value between the bottom electrode and the top electrode to be the target voltage value, so that the measuring range and the sensitivity of the tunneling magneto-resistance sensor are respectively a target measuring range and a target sensitivity.
Optionally, the controller is specifically configured to:
determining target magnetic anisotropy energy density corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the magnetic anisotropy energy density and the measuring range and the sensitivity;
and determining a target voltage value corresponding to the target magnetic anisotropy energy density according to the corresponding relation between the magnetic anisotropy energy density and the voltage.
Optionally, the adjustable power supply is a discontinuous adjustable voltage source, the discontinuous adjustable voltage source provides voltages of N voltage values for selection, and N is a positive integer greater than 1;
the controller is specifically configured to:
adjusting a voltage value between the bottom electrode and the top electrode to one of the N voltage values.
Optionally, a voltage value between the bottom electrode and the top electrode is not lower than a reverse critical voltage, where the reverse critical voltage is a reverse voltage when the magnetic anisotropy energy density is zero.
According to the technical scheme, the embodiment of the application has the following advantages:
the embodiment of the application provides a method for regulating and controlling a tunneling magneto-resistance sensor, which loads voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor based on an adjustable power supply, changes an interface coupling coefficient of a magnetic tunnel junction in the tunneling magneto-resistance sensor by regulating an applied voltage value, can regulate the perpendicular anisotropy performance of an interface through the coupling coefficient, and further regulates the magnetic anisotropy performance of the magnetic tunnel junction, so that the sensitivity and a linear region of the tunneling magneto-resistance sensor are correspondingly regulated and controlled, an additional compensation circuit is not needed, and the overall complexity of a magnetic detection system is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a flow chart illustrating a method for regulating a tunneling magnetoresistive sensor according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating the regulation of a tunneling magnetoresistive sensor according to an embodiment of the present application;
FIG. 3 shows potential barrier diagrams of three cases of a voltage equal to 0, greater than 0 and less than 0 in the embodiment of the application;
fig. 4 shows a schematic structural diagram of a regulation system of a tunneling magnetoresistive sensor provided in an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Next, the present invention will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration when describing the embodiments of the present invention, and the drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication. Furthermore, the present invention may repeat reference numerals and/or letters in the various embodiments, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or arrangements discussed.
Aiming at the problem that the whole complexity of a magnetic detection system is increased due to the fact that the whole complexity of the magnetic detection system is increased by the technical scheme that compensation operation is carried out on a circuit part such as an operational amplifier and the like at present, the application provides a regulation and control method of a tunneling magneto-resistance sensor. Compared with the compensation through a circuit part, the method adopts an external voltage mode to regulate and control the measuring range and the sensitivity, thereby greatly reducing the complexity of the magnetic detection system.
In order to make the technical solution of the present application clearer and easier to understand, a method for forming a magnetic tunnel junction of the present application will be described below with reference to specific embodiments.
Fig. 1 is a flowchart of a method for controlling a tunneling magnetoresistive sensor according to an embodiment of the present application, and fig. 2 is a schematic diagram of a method for controlling a tunneling magnetoresistive sensor according to an embodiment of the present application, where the tunneling magnetoresistive sensor includes a substrate, a bottom electrode located on the substrate, a magnetic tunnel junction, an insulating dielectric layer, and a top electrode, and the method includes:
s101: and loading a voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor, wherein the voltage is a variable voltage provided by an adjustable power supply.
The adjustable power supply may be a continuously adjustable voltage source, and the continuously adjustable voltage source is configured to provide a voltage with a voltage value in a first interval, that is, the voltage may continuously change in the first interval. The voltage value included in the first interval may be a positive value or a negative value.
In some possible implementations, the adjustable power supply may also be a discontinuous adjustable voltage source capable of providing voltages of N voltage values for selection, where N is a positive integer greater than 1. It should be noted that the N voltage values provided by the discontinuous adjustable voltage source may all be positive values, or both positive values and negative values. As a specific example of the present application, the discontinuous adjustable voltage source may provide several step voltage values as follows for selection: -10V, -5V, -1V, 5V and 10V.
In specific implementation, two stages of a power supply can be respectively connected with the tunneling magneto-resistance sensor, for example, the positive electrode of the power supply is connected with the top electrode of the tunneling magneto-resistance sensor, and the negative electrode of the power supply is connected with the bottom electrode of the tunneling magneto-resistance sensor, so that voltage is loaded between the bottom electrode and the top electrode of the tunneling magneto-resistance sensor.
S102: and adjusting the voltage value between the bottom electrode and the top electrode so as to regulate and control the measuring range and the sensitivity of the tunneling magneto-resistance sensor.
It is understood that the core structure of the tunneling magnetoresistive sensor is a magnetic tunnel junction, the first magnetic layer is also called a reference layer, and the second magnetic layer is also called a free layer, both have in-plane magnetic anisotropy, but the easy magnetization axes of the two are perpendicular to each other. Under the action of an external magnetic field in the same direction as the easy magnetization axis of the reference layer, the magnetic moment of the free layer rotates, the included angle between the magnetic moment of the free layer and the magnetic moment of the reference layer is in a linear relation with the size of the external magnetic field in a certain range, the included angles of the magnetic moments are different, and the tunnel junction shows different resistances. Therefore, in a certain magnetic field range, the resistance of the tunnel junction and an external magnetic field are in a linear relation, the slope of the resistance is defined as the sensitivity of the sensor, the length of a linear area determines the measuring range of the sensor, and the length of the linear area is determined by a saturation magnetic field.
Wherein, the stronger the in-plane magnetic anisotropy is, the smaller the output slope is, the larger the saturation magnetic field is, that is, the lower the sensitivity is, the larger the linear region is; conversely, the weaker the in-plane magnetic anisotropy is, the larger the output slope is, the smaller the saturation magnetic field is, that is, the higher the sensitivity is, the smaller the linear region is.
For a tunneling magnetoresistive sensor, the magnetic anisotropy of the tunneling magnetoresistive sensor comprises a plurality of sources, and the sum of the magnetic anisotropy of the plurality of sources determines the final magnetic anisotropy of the tunneling magnetoresistive sensor. Taking a tunneling magneto-resistance sensor with a magnetic tunnel junction being CFB/MgO/CFB as an example, the magnetic anisotropy of the tunneling magneto-resistance sensor comprises three parts, wherein the first part is bulk anisotropy, the second part is in-plane anisotropy, the third part is interface perpendicular anisotropy, and the magnetic anisotropy energy density can be expressed as:
wherein K is the magnetic anisotropy energy density, KbFor bulk anisotropic performance density, K is for a CFB/MgO/CFB magnetic tunnel junctionbSmaller, almost negligible, and μ0Is referred to as the vacuum permeability, MSRefers to the saturation magnetization of the free layer, KiRefers to the interface coupling coefficient of the magnetic tunnel junction, specifically, refers to the interface coupling coefficient of CoFeB/MgO, tCoFeBRefers to the thickness of the magnetic layer CoFeB.
In view of KbAlmost negligibly, K is actually equivalent to the sum of the last two terms in formula (1), the second term in formula (1) being the demagnetization energy density, which is the source of in-plane anisotropy, and the third term being the interfacial perpendicular anisotropy energy density, and based on formula (1), it is known that the second term is greater than the third term, and is expressed as in-plane anisotropy, and the second term is less than the third term, as perpendicular anisotropy.
Considering the Voltage Control Magnetic Anisotropy (VCMA) effect, i.e. along the appropriate directionThe effect of the applied electric field can be used to optimize the write performance of the magnetic tunnel junction by reducing the perpendicular magnetic anisotropy of the interface, thereby reducing the energy barrier to be overcome for a write operation, when a forward voltage, i.e., a voltage in the direction from the free layer to the reference layer, is applied across the magnetic tunnel junction, KiWill decrease with increasing voltage, when a negative voltage, i.e. a voltage in the direction from the reference layer to the free layer, is applied across the magnetic tunnel junction, KiWill increase as the voltage decreases. In the tunneling magneto-resistance sensor, the whole magnetic tunnel junction is expressed by in-plane magnetic anisotropy, so when a positive voltage is loaded, the larger the positive voltage is, the larger the absolute value of K is, the stronger the in-plane anisotropy is, the smaller the sensitivity is, the larger the measuring range is, when a negative voltage is loaded, the larger the negative voltage is, the smaller the absolute value of K is, the weaker the in-plane anisotropy is, the larger the sensitivity is, and the smaller the measuring range is.
That is, the magnitude of in-plane anisotropy of the CoFeB free layer can be controlled by voltage, and forward voltage enables the in-plane energy to be increased, and conversely, the in-plane energy can be reduced, so that the sensitivity and the linear region of the tunneling magnetoresistive sensor are correspondingly controlled.
As shown in fig. 2, a voltage V is applied between the antiferromagnetic layer and the top electrode of the magnetic tunnel sensor, wherein the antiferromagnetic layer corresponds to the bottom electrode, the barrier layer in fig. 2 corresponds to the tunneling layer as described above, and barrier diagrams in three cases of the applied voltage V being equal to 0, greater than 0 and less than 0 are also shown in fig. 3 (a), (B), (C), the barrier diagram showing that the perpendicular anisotropy energy barrier of the magnetic tunnel junction free layer is E in the absence of an applied voltage as shown in fig. 3 (a), and the perpendicular anisotropy energy barrier of the magnetic tunnel junction free layer is less than E in the case of an applied forward voltage as shown in fig. 3 (B), and decreases with an increase in voltage, and based on the above equation (1), the in-plane anisotropy energy is enhanced, the sensitivity is decreased, and the range is increased, and the perpendicular anisotropy energy barrier of the magnetic tunnel junction free layer is greater than E in the case of an applied reverse voltage as shown in fig. 3 (C), as the voltage increases, the in-plane anisotropy energy decreases, the sensitivity increases, and the range decreases, as is clear from the above equation (1).
It should be noted that the tunneling magnetoresistive sensor as a whole exhibits in-plane anisotropyAccordingly, the third term in the above formula (1) is required to be less than or equal to the second term, and the inversion voltage when the magnetic anisotropy energy density is zero is defined as the inversion threshold voltage VcThe voltage value between the bottom electrode and the top electrode is not lower than VcIn specific implementation, the voltage value of the voltage provided by the adjustable power supply is (-V)c，+Vbd) Inner, VbdIs the breakdown voltage of the device.
Therefore, the embodiment of the application provides a method for regulating a tunneling magneto-resistance sensor, the method loads voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor based on an adjustable power supply, the interface coupling coefficient of a magnetic tunnel junction in the tunneling magneto-resistance sensor is changed by adjusting an applied voltage value, the perpendicular anisotropy performance of an interface can be adjusted through the coupling coefficient, and further the magnetic anisotropy performance of the magnetic tunnel junction is adjusted, so that the sensitivity and the linear region of the tunneling magneto-resistance sensor are correspondingly regulated without an additional compensation circuit, and the overall complexity of a magnetic detection system is reduced.
With respect to the embodiment shown in fig. 1, the embodiments of the present application further provide several implementation manners for adjusting the voltage value between the bottom electrode and the top electrode.
In one implementation, the adjustable power source is a continuously adjustable voltage source, and a target voltage value corresponding to the target measurement range and the target sensitivity may be determined according to a corresponding relationship between voltage, measurement range, and sensitivity, where the target voltage value is located in the first interval, and then the voltage value between the bottom electrode and the top electrode is adjusted to the target voltage value, so that the measurement range and the sensitivity of the tunneling magnetoresistance sensor are the target measurement range and the target sensitivity, respectively.
In specific implementation, the target magnetic anisotropy energy density corresponding to the target measurement range and the target sensitivity is determined according to the corresponding relationship between the magnetic anisotropy energy density and the measurement range and the sensitivity, and then the target voltage value corresponding to the target magnetic anisotropy energy density is determined according to the corresponding relationship between the magnetic anisotropy energy density and the voltage.
In another implementation manner, when the adjustable power source is a discontinuous adjustable voltage source, the voltage value between the bottom electrode and the top electrode may be adjusted to one of the N voltage values, so as to adjust the voltage value, and further adjust and control the range and sensitivity of the tunneling magnetoresistance sensor.
The above detailed description is made on the method for controlling a tunneling magnetoresistive sensor according to an embodiment of the present application, and in addition, the present application also provides a system for controlling a tunneling magnetoresistive sensor for performing the method, and as shown in fig. 4, the system 400 includes a magnetoresistive sensor 410, an adjustable power supply 420, and a controller 430, the tunneling magnetoresistive sensor 410 includes a substrate, a bottom electrode located above the substrate, a magnetic tunnel junction, an insulating medium layer, and a top electrode, where:
the magneto-resistance sensor 410 is used for acquiring a magnetic signal and converting the magnetic signal into an electric signal;
the adjustable power supply 420 is used for providing variable voltage;
the controller 430 is configured to apply a voltage between a bottom electrode and a top electrode of the tunneling magnetoresistive sensor, and adjust a voltage value between the bottom electrode and the top electrode to adjust a measurement range and a sensitivity of the tunneling magnetoresistive sensor.
Optionally, the adjustable power supply 420 is a continuous adjustable voltage source, and the continuous adjustable voltage source provides a voltage with a voltage value in a first interval;
the controller 430 is specifically configured to:
determining a target voltage value corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the voltage, the measuring range and the sensitivity, wherein the target voltage value is positioned in the first interval;
and adjusting the voltage value between the bottom electrode and the top electrode to be the target voltage value, so that the measuring range and the sensitivity of the tunneling magneto-resistance sensor are respectively a target measuring range and a target sensitivity.
Optionally, the controller 430 is specifically configured to:
determining target magnetic anisotropy energy density corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the magnetic anisotropy energy density and the measuring range and the sensitivity;
and determining a target voltage value corresponding to the target magnetic anisotropy energy density according to the corresponding relation between the magnetic anisotropy energy density and the voltage.
Optionally, the adjustable power supply 420 is a discontinuous adjustable voltage source, which provides N voltages for selection, where N is a positive integer greater than 1;
the controller 430 is specifically configured to:
adjusting a voltage value between the bottom electrode and the top electrode to one of the N voltage values.
Optionally, a voltage value between the bottom electrode and the top electrode is not lower than a reverse critical voltage, where the reverse critical voltage is a reverse voltage when the magnetic anisotropy energy density is zero.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiment of the device structure, since it is substantially similar to the method embodiment, it is relatively simple to describe, and for related points, refer to the partial description of the method embodiment.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A method for regulating and controlling a tunneling magneto-resistance sensor is characterized in that the tunneling magneto-resistance sensor comprises a substrate, a bottom electrode, a magnetic tunnel junction, an insulating medium layer and a top electrode, wherein the bottom electrode, the magnetic tunnel junction, the insulating medium layer and the top electrode are positioned on the substrate; the magnetic tunnel junction is CoFeB/MgO/CoFeB, and the method comprises the following steps:
loading a voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor, wherein the voltage is a variable voltage provided by an adjustable power supply;
and adjusting the voltage value between the bottom electrode and the top electrode, changing the interface coupling coefficient of CoFeB/MgO of the magnetic tunnel junction in the tunneling magneto-resistance sensor, adjusting the perpendicular anisotropy of the interface through the interface coupling coefficient, and further adjusting the magnetic anisotropy of the magnetic tunnel junction so as to regulate and control the measuring range and the sensitivity of the tunneling magneto-resistance sensor.
2. The method of claim 1, wherein the adjustable power source is a continuously adjustable voltage source providing a voltage having a first interval of voltage values;
the adjusting the voltage value between the bottom electrode and the top electrode comprises:
determining a target voltage value corresponding to a target range and a target sensitivity according to the corresponding relation between the voltage, the range and the sensitivity, wherein the target voltage value is positioned in the first interval;
and adjusting the voltage value between the bottom electrode and the top electrode to be the target voltage value, so that the measuring range and the sensitivity of the tunneling magneto-resistance sensor are respectively a target measuring range and a target sensitivity.
3. The method of claim 2, wherein determining the target voltage value corresponding to the target range and the target sensitivity based on the voltage and range and sensitivity relationship comprises:
determining target magnetic anisotropy energy density corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the magnetic anisotropy energy density and the measuring range and the sensitivity;
and determining a target voltage value corresponding to the target magnetic anisotropy energy density according to the corresponding relation between the magnetic anisotropy energy density and the voltage.
4. The method of claim 1, wherein the adjustable power source is a discontinuous adjustable voltage source that provides N voltage values for selection, N being a positive integer greater than 1;
the adjusting the voltage value between the bottom electrode and the top electrode comprises:
adjusting a voltage value between the bottom electrode and the top electrode to one of the N voltage values.
5. The method according to any one of claims 1 to 4, wherein the voltage between the bottom electrode and the top electrode is not lower than a reverse critical voltage, which is a reverse voltage at which the magnetic anisotropy energy density is zero.
6. The system for regulating and controlling the tunneling magneto-resistance sensor is characterized by comprising the tunneling magneto-resistance sensor, an adjustable power supply and a controller, wherein the tunneling magneto-resistance sensor comprises a substrate, a bottom electrode, a magnetic tunnel junction, an insulating medium layer and a top electrode, the bottom electrode is positioned on the substrate, the magnetic tunnel junction is CoFeB/MgO/CoFeB, and the system comprises:
the magneto-resistance sensor is used for acquiring magnetic signals and converting the magnetic signals into electric signals;
the adjustable power supply is used for providing variable voltage;
the controller is used for loading voltage between a bottom electrode and a top electrode of the tunneling magneto-resistance sensor, adjusting a voltage value between the bottom electrode and the top electrode, changing an interface coupling coefficient of CoFeB/MgO of the magnetic tunnel junction in the tunneling magneto-resistance sensor, adjusting the perpendicular anisotropy of an interface through the interface coupling coefficient, and further adjusting the magnetic anisotropy of the magnetic tunnel junction so as to regulate and control the measuring range and the sensitivity of the tunneling magneto-resistance sensor.
7. The system of claim 6, wherein the adjustable power source is a continuously adjustable voltage source providing a voltage having a first interval of voltage values;
the controller is specifically configured to:
determining a target voltage value corresponding to a target range and a target sensitivity according to the corresponding relation between the voltage, the range and the sensitivity, wherein the target voltage value is positioned in the first interval;
and adjusting the voltage value between the bottom electrode and the top electrode to be the target voltage value, so that the measuring range and the sensitivity of the tunneling magneto-resistance sensor are respectively a target measuring range and a target sensitivity.
8. The system of claim 7, wherein the controller is specifically configured to:
determining target magnetic anisotropy energy density corresponding to the target measuring range and the target sensitivity according to the corresponding relation between the magnetic anisotropy energy density and the measuring range and the sensitivity;
and determining a target voltage value corresponding to the target magnetic anisotropy energy density according to the corresponding relation between the magnetic anisotropy energy density and the voltage.
9. The system of claim 6, wherein the adjustable power source is a discontinuous adjustable voltage source providing N voltage values for selection, N being a positive integer greater than 1;
the controller is specifically configured to:
adjusting a voltage value between the bottom electrode and the top electrode to one of the N voltage values.
10. The system of any one of claims 6 to 9, wherein the voltage between the bottom electrode and the top electrode is not lower than a reverse critical voltage, which is a reverse voltage at which the magnetic anisotropy energy density is zero.
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| CN113866691B (en) * | 2021-12-02 | 2022-09-23 | 北京芯可鉴科技有限公司 | Tunneling magneto-resistance sensor and preparation method and using method thereof |
| CN115236568B (en) | 2022-09-23 | 2023-01-20 | 南方电网数字电网研究院有限公司 | Wide-range vertical sensitive magnetic sensor based on magnetic flux regulator and preparation method thereof |
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| CN109690675A (en) * | 2016-06-28 | 2019-04-26 | 赢世通股份有限公司 | A kind of novel word line pulse wiring method can be applied to magnetotunneling knot |
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