CN110098343B - Quantum dot composite and preparation method thereof, and light-emitting device and preparation method thereof - Google Patents
Quantum dot composite and preparation method thereof, and light-emitting device and preparation method thereof Download PDFInfo
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Abstract
The embodiment of the invention provides a quantum dot composite and a preparation method thereof, and a luminescent device and a preparation method thereof, wherein the quantum dot composite comprises core-shell quantum dots and an electron transmission material layer arranged on the outer side of the core-shell quantum dots, wherein the electron transmission material layer wraps part of the core-shell quantum dots, and exposes the other part of the core-shell quantum dots; the invention solves the problem that excitons formed by electrons and holes are easily quenched at the interface of the luminescent layer and the electron transport layer, thereby improving the performance of the quantum dot light-emitting diode.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot composite and a preparation method thereof, and a light-emitting device and a preparation method thereof.
Background
Quantum dots are an important low-dimensional semiconductor material, and the size of each of the three dimensions is not larger than twice the exciton bohr radius of the corresponding semiconductor material. Quantum dots are generally spherical or spheroidal, often with diameters between 2-20 nm. Quantum Dots (QDs) as a novel luminescent material have the advantages of high color purity, high luminescent quantum efficiency, adjustable luminescent color, long service life, and the like, and become a research hotspot of the current novel LED luminescent materials. Therefore, quantum dot light emitting diodes (QLEDs) using quantum dot materials as light emitting layers are the main direction of research on new display devices.
Quantum dot light emitting diodes typically include a light emitting layer having a plurality of cadmium selenide nanocrystals. The cadmium selenide layer is arranged between the electron transmission layer and the hole transmission layer, and an electric field is applied to the quantum dot light emitting diode to enable electrons and holes to move into the cadmium selenide layer. In the cadmium selenide layer, electrons and holes are trapped in the quantum dots and recombine to emit photons. The quantum dot light-emitting diode in the prior art has short service life and low performance, and cannot meet the requirements of users.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a quantum dot composite, a preparation method thereof, a light emitting device and a preparation method thereof, which solve the problem that excitons formed by electrons and holes are easily quenched at the interface between a light emitting layer and an electron transport layer, thereby improving the performance of a quantum dot light emitting diode.
In order to solve the above technical problem, an embodiment of the present invention provides a quantum dot composite, including a core-shell quantum dot and an electron transport material layer disposed outside the core-shell quantum dot, where the electron transport material layer wraps a part of the core-shell quantum dot, and exposes another part of the core-shell quantum dot.
Optionally, the electron transport material layer encapsulates the 1/2 core-shell quantum dots and exposes another 1/2 core-shell quantum dots.
Optionally, the material of the electron transport material layer is metal oxide.
Optionally, the core-shell quantum dot includes a core material and a shell material encapsulating the core material.
In order to solve the above technical problem, an embodiment of the present invention further provides a method for preparing a quantum dot composite, including:
forming an electronic transmission material layer which wraps the core-shell quantum dots completely on the outer sides of the core-shell quantum dots to form a composite semi-finished product;
mixing a non-polar solvent and a polar solvent to form a phase-separated solution;
dissolving the semi-finished product of the compound into the non-polar solvent;
adding a water-phase quantum dot ligand into the polar solvent to ensure that a part of the semi-finished compound product is in the polar solvent and the other part of the semi-finished compound product is in the non-polar solvent;
and etching the electron transmission material layer of the partial composite semi-finished product to expose the core-shell quantum dots of the partial composite semi-finished product.
Optionally, the etching the electron transport material layer of the partial composite semi-finished product includes
And adding weak acid into the polar solvent, and etching the electron transport material layer of the partial composite semi-finished product through the weak acid.
Optionally, the weak acid comprises one or more of hypochlorous acid, boric acid, metasilicic acid, and phenol.
Optionally, said subjecting a part of the composite semi-finished product to a polar solvent and another part of the composite semi-finished product to a non-polar solvent comprises
And adding an aqueous phase quantum dot ligand into the polar solvent, so that part of the semi-finished product of the compound is in the polar solvent and is subjected to ligand exchange with the aqueous phase quantum dot ligand.
Optionally, the semi-finished compound is mixed with the non-polar solvent according to the mass ratio of 1:100-1: 2.
Optionally, the polar solvent and the non-polar solvent are mixed in a volume ratio of 1:10 to 10: 1.
Optionally, the aqueous phase quantum dot ligand and the polar solvent are mixed according to the mass ratio of 1:10-3: 1.
In order to solve the technical problem, the embodiment of the invention further provides a light-emitting device, which comprises a light-emitting layer, an electron transport layer and an interface layer located between the light-emitting layer and the electron transport layer, wherein the interface layer comprises the quantum dot composite.
Optionally, the electron transport material layer of the quantum dot composite is located on a side of the core-shell quantum dot of the quantum dot composite away from the light emitting layer.
In order to solve the above technical problem, an embodiment of the present invention further provides a method for manufacturing the light emitting device, including:
forming a light emitting layer;
forming a hydrophilic interface on the surface of the light-emitting layer;
forming an interface layer on a hydrophilic interface of the light-emitting layer, so that an electron transport material layer of the quantum dot composite in the interface layer is positioned on one side, away from the light-emitting layer, of the core-shell quantum dot of the quantum dot composite;
an electron transport layer is formed on the interfacial layer.
The embodiment of the invention provides a quantum dot compound and a preparation method thereof, a light-emitting device and a preparation method thereof, wherein an electron transmission material layer is formed on the outer side of part of core-shell quantum dots, so that the electron transmission material layer wraps part of the core-shell quantum dots, and the other part of the core-shell quantum dots are exposed.
Of course, not all of the advantages described above need to be achieved at the same time in the practice of any one product or method of the invention. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the embodiments of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention. The shapes and sizes of the various elements in the drawings are not to scale and are merely intended to illustrate the invention.
FIG. 1 is a schematic structural diagram of a quantum dot composite according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a core-shell quantum dot formed during a quantum dot composite manufacturing process according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a composite semi-finished product formed in the process of preparing a quantum dot composite according to a first embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a phase-separated solution in a process of preparing a quantum dot composite according to a first embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a quantum dot composite according to the first embodiment of the present invention after a semi-finished composite is added to the phase-separated solution during the preparation process;
FIG. 6 is a schematic structural diagram of a quantum dot composite prepared according to the first embodiment of the present invention with a portion of the semi-finished composite in a polar solvent;
FIG. 7 is a schematic structural diagram of a partially-fabricated electronic transmission material layer after etching in the process of preparing a quantum dot composite according to the first embodiment of the present invention;
fig. 8 is a schematic structural view of a light-emitting device according to a second embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a second embodiment of a light-emitting device according to the present invention after a hydrophilic interface is formed on a substrate during fabrication;
FIG. 10 is a schematic structural diagram of a second embodiment of a light-emitting device according to the present invention after a first nucleocapsid quantum dot layer is deposited on a hydrophilic interface during fabrication;
fig. 11 is a schematic structural diagram of a second core-shell quantum dot layer deposited on a hydrophilic interface during the fabrication of a light-emitting device according to a second embodiment of the present invention;
FIG. 12 is a schematic view showing a structure of a light-emitting device according to a second embodiment of the present invention after an interfacial layer is formed on a hydrophilic interface of a light-emitting layer during the fabrication thereof;
fig. 13 is a schematic view showing a structure after an electron transport layer is formed on an interface layer in the fabrication of a light emitting device according to a second embodiment of the present invention.
Description of reference numerals:
Detailed Description
The following detailed description of embodiments of the invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The quantum dots have some unique characteristics, such as adjustable emission wavelength, narrow emission spectrum, high emission stability and the like, and have become important research and development points in recent years. The quantum dot light emitting diode has the advantages of high light emitting efficiency, wide color range, real color reproduction and low energy consumption, but the conventional quantum dot light emitting diode has short service life, mainly because excitons formed by electrons and holes are easily quenched at the interface of a light emitting layer and an electron transport layer. The quantum dot light-emitting diode aims to solve the problems that excitons formed by electrons and holes of the conventional quantum dot light-emitting diode are easily quenched at the interface of a light-emitting layer and an electron transport layer and the like. The invention provides a quantum dot composite, which comprises core-shell quantum dots and an electronic transmission material layer arranged on the outer sides of the core-shell quantum dots, wherein the electronic transmission material layer wraps part of the core-shell quantum dots and exposes the other part of the core-shell quantum dots; the quantum dot composite is used for forming an interface layer between a light-emitting layer and an electron transport layer, so that the interface of the light-emitting layer and the electron transport layer forms a non-heterostructure, the problem that excitons formed by electrons and holes in a quantum dot light-emitting diode are easily quenched at the interface of the light-emitting layer and the electron transport layer is solved, the service life of the quantum dot light-emitting diode is prolonged, and the performance of the quantum dot light-emitting diode is improved.
The technical solution of the present invention will be described in detail by the following specific examples.
First embodiment
Fig. 1 is a schematic structural diagram of a quantum dot composite according to an embodiment of the present invention. As shown in fig. 1, the quantum dot composite according to the embodiment of the invention includes a core-shell quantum dot 1 and an electron transport material layer 2 disposed outside the core-shell quantum dot 1, where the electron transport material layer 2 wraps a part of the core-shell quantum dot 1 and exposes another part of the core-shell quantum dot 1.
As shown in fig. 1, the core-shell quantum dot 1 includes a core material 101 and a shell material 102 that encapsulates the core material 101, where the core material 101 includes cadmium selenide, cadmium sulfide, indium phosphide, or the like. In the embodiment of the invention, the core-shell quantum dot 1 adopts cadmium selenide (CdSe) as a core material 101 and adopts zinc sulfide (ZnS) as a shell material 102.
As shown in fig. 1, the material of the electron transport material layer 2 is metal oxide, and in this embodiment, the material of the electron transport material layer 2 is zinc oxide (ZnO) formed by oxidizing and etching the shell material 102. The quantum dot composite in the embodiment is used as an interface layer between an electron transport layer and a hole transport layer in the quantum dot light-emitting diode, so that the interface of a light-emitting layer and the electron transport layer forms a non-heterostructure, the problem that excitons formed by electrons and holes in the quantum dot light-emitting diode are easily quenched at the interface of the light-emitting layer and the electron transport layer is solved, the service life of the quantum dot light-emitting diode is prolonged, and the performance of the quantum dot light-emitting diode is improved.
In some embodiments, the quantum dot composite may also use other materials as the core material, the shell material, and the electron transport material layer, which are not described herein again.
Further, the electron transport material layer 2 encapsulates the 1/2 core-shell quantum dots 1, and exposes another 1/2 core-shell quantum dots 1.
Fig. 2 to 7 are schematic diagrams of the preparation process of the quantum dot composite in this embodiment, which schematically illustrate the preparation process of the quantum dot composite using cadmium selenide (CdSe) as a core material, zinc sulfide as a shell material, and zinc oxide (ZnO) as an electron transport material layer material. The preparation method of the quantum dot composite comprises the following steps:
(1) forming the core-shell quantum dots 1. Forming the core-shell quantum dot 1 includes: cadmium selenide (CdSe) is wrapped completely with a core material 101 and zinc sulfide (ZnS) as a shell material 102, as shown in fig. 2. The preparation method of the core-shell quantum dot is a mature preparation process, and details are not repeated here.
(2) A composite semi-finished product 3 is formed. Forming the composite semi-finished product 3 comprises: the shell material 102 on the outer side of the core material 101 is oxidized, and a part of the shell material 102 is oxidized by oxidation to form the electron transporting material layer 2, and the material of the electron transporting material layer 2 is zinc oxide (ZnO). Namely, the core-shell quantum dots 1 are formed into cadmium selenide (CdSe)/zinc sulfide (ZnS)/zinc oxide (ZnO) nanoparticles, as shown in fig. 3. The method for oxidizing zinc sulfide (ZnS) comprises the following steps: putting zinc sulfide in nitrogen, introducing a small amount of oxygen, carrying out heat preservation treatment for 2 hours at the temperature of 700 ℃, cooling to room temperature, and finishing the oxidation treatment of zinc sulfide (ZnS).
(3) A phase separation solution is prepared. Preparing the phase separation solution comprises: mixing the polar solvent 4 and the non-polar solvent 5 according to the volume ratio of 1:10-10:1 to prepare a phase separation solution. In this example, water is used as the polar solvent 4, hexane is used as the nonpolar solvent 5, and the volume ratio of water to hexane is 1:1 to form a phase-separated solution, as shown in fig. 4.
(4) Adding the semi-finished product of the compound. The addition of the semi-finished composite product comprises the following steps: mixing the semi-finished compound 3 and the nonpolar solvent 5 according to the mass ratio of 1:100-1: 2. In this example, 100mg of the above-mentioned semi-finished complex 3 was dissolved in 200mg of hexane solvent, as shown in FIG. 5.
(5) So that part of the semi-finished composite product is in the polar solvent, and the other part of the semi-finished composite product is in the non-polar solvent. Placing a portion of the composite blank in a polar solvent and another portion of the composite blank in a non-polar solvent comprises: adding an aqueous phase quantum dot ligand into the polar solvent, and mixing the aqueous phase quantum dot ligand and the polar solvent according to the mass ratio of 1:10-3: 1. In this embodiment, 30mg of the aqueous phase quantum dot ligand 401 is added to water, wherein the aqueous phase quantum dot ligand 401 is mercaptopropionic acid; and (3) enabling the composite semi-finished product to be positioned at the interface of the polar solvent 4 and the non-polar solvent 5, namely enabling a part of the composite semi-finished product 3 to be positioned in the polar solvent 4 to perform ligand exchange with the aqueous phase quantum dot ligand 401 in the polar solvent 4, and enabling the other part of the composite semi-finished product 3 to be positioned in the non-polar solvent 5. In this embodiment, the ligand exchange degree of the above-mentioned partial composite semi-finished product 3 is controlled according to the content of the aqueous phase quantum dot ligand 401 in the polar solvent 4, so as to control the volume of the composite semi-finished product 3 in the polar solvent 4, as shown in fig. 6.
(6) And etching the electron transmission material layer of the partial composite semi-finished product to expose the core-shell quantum dots of the partial composite semi-finished product. Etching the electron transport material layer of the partial composite semi-finished product to expose the core-shell quantum dots of the partial composite semi-finished product, wherein the step of etching the electron transport material layer of the partial composite semi-finished product comprises the following steps: and adding weak acid into the polar solvent 4, and etching the electron transport material layer 2 of the partial composite semi-finished product 3 through the weak acid to expose the core-shell quantum dots 1 of the composite semi-finished product 3 in the polar solvent 4, thereby completing the preparation of the quantum dot composite. Wherein the mass ratio of the weak acid to the semi-finished composite is 1:100-100:1, as shown in FIG. 7.
In the examples, the amount of core shell exposed to a polar solvent is continued in order to avoid the addition of a weak acid to the polar solventEtching the sub-dots by selecting acid weaker than hydrosulfuric acid, wherein the weak acid added into the polar solvent is one or a combination of more of hypochlorous acid, boric acid, metasilicic acid and phenol, and the acidity of the hypochlorous acid, the boric acid, the metasilicic acid and the phenol is as follows: HClO (hypochlorous acid)>H3BO3(boric acid)>H2SiO3(metasilicic acid)>C6H5OH (phenol).
Although the technical solution of the embodiment of the present invention is described in the manner of interface etching, the structure and the preparation method of the quantum dot composite according to the embodiment of the present invention are not limited to the above. In fact, the structural forms of the existing quantum dots are all applicable to the embodiments of the present invention, and are not described herein again.
The quantum dot composite provided by the embodiment of the invention is used as an interface layer between an electron transport layer and a hole transport layer in a quantum dot light-emitting diode, so that the problem that excitons formed by electrons and holes are easily quenched at the interface of a light-emitting layer and the electron transport layer is solved, a non-heterogeneous structure is formed at the interface of the light-emitting layer and the electron transport layer, the service life of the quantum dot light-emitting diode is prolonged, and the performance of the quantum dot light-emitting diode is improved.
Second embodiment
Fig. 8 is a schematic structural view of a light-emitting device according to a second embodiment of the present invention. As shown in fig. 8, based on the technical idea of the foregoing embodiment, the present invention also provides a light emitting device including a substrate 6, a light emitting layer 7 disposed on the substrate 6, an electron transporting layer 9, and an interfacial layer 8 located between the light emitting layer 7 and the electron transporting layer 9, the interfacial layer 8 including the foregoing quantum dot composite. The electron transport material layer of the quantum dot composite in the interface layer 8 is located on the side of the core-shell quantum dot of the quantum dot composite away from the light emitting layer 7.
The luminescent device of the embodiment of the invention forms the interface layer through the quantum dot compound, solves the problem that excitons formed by electrons and holes in the luminescent device are easily quenched at the interface of the luminescent layer and the electron transport layer, and enables the interface of the luminescent layer and the electron transport layer to form a non-heterogeneous structure, thereby prolonging the service life of the luminescent device and improving the performance of the luminescent device.
Fig. 9 to 13 are schematic views of the manufacturing process of the light emitting device of this embodiment, which illustrate the manufacturing process of forming the interface layer by using the quantum dot composite of the first embodiment. The method for manufacturing the light emitting device includes:
(1) a hydrophilic interface is formed on the substrate. Forming a hydrophilic interface on a substrate comprises: depositing a zinc oxide nanoparticle layer on the substrate 6, and performing ligand exchange with the zinc oxide nanoparticle layer by using a hydrophilic ligand after the deposition is completed, so that the zinc oxide nanoparticle layer forms a hydrophilic interface 601, as shown in fig. 9.
(2) Forming a light emitting layer. The forming of the light emitting layer includes: depositing a first core-shell quantum dot layer 701 on the hydrophilic interface 601, performing ligand exchange on a hydrophobic ligand of the first core-shell quantum dot layer 701 by using mercaptopropionic acid, forming a hydrophilic interface on the surface of the first core-shell quantum dot layer 701, depositing a second core-shell quantum dot layer 702 on the hydrophilic interface, and so on, and continuing to deposit the core-shell quantum dot layer until the target thickness is reached to form a light-emitting layer. The core-shell quantum dot layer uses cadmium selenide (CdSe) as a core material and zinc sulfide as a shell material, as shown in fig. 10 and 11.
(3) A hydrophilic interface is formed on the surface of the light-emitting layer. Forming a hydrophilic interface on a surface of the light-emitting layer includes: and (3) carrying out ligand exchange on the hydrophobic ligand of the core-shell quantum dot in the light-emitting layer by using mercaptopropionic acid, so that a hydrophilic interface is formed on the surface of the light-emitting layer.
(4) An interface layer is formed on the hydrophilic interface of the light-emitting layer. Forming an interfacial layer on the hydrophilic interface of the light-emitting layer includes: the quantum dot composite 801 is deposited on the hydrophilic interface of the light emitting layer to form an interface layer 8. Since the part of the quantum dot composite 801 exposing the core-shell quantum dot 1 has the hydrophilic ligand, and the hydrophilic ligand is mutually attracted with the hydrophilic interface of the light-emitting layer, the electron transport material layer 2 in the quantum dot composite 801 is located on the side of the core-shell quantum dot 1 of the quantum dot composite 801 away from the light-emitting layer 7, so as to prevent the electron transport material layer 2 from blocking the hole, as shown in fig. 12.
(5) An electron transport layer 9 is formed on the interface layer 8 as shown in fig. 13.
In the description of the embodiments of the present invention, it should be understood that the terms "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the embodiments of the present invention, it should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (14)
1. The quantum dot composite is characterized by comprising core-shell quantum dots and an electron transmission material layer formed on the outer sides of the core-shell quantum dots, wherein the electron transmission material layer wraps part of the core-shell quantum dots and exposes the other part of the core-shell quantum dots;
wherein the quantum dot composite is prepared by the following method:
forming the electronic transmission material layer which wraps all the core-shell quantum dots on the outer sides of the core-shell quantum dots to form a semi-finished compound product;
mixing a non-polar solvent and a polar solvent to form a phase-separated solution;
dissolving the semi-finished product of the compound into the non-polar solvent;
a part of the semi-finished compound product is in a polar solvent, and the other part of the semi-finished compound product is in a non-polar solvent;
and etching the electron transmission material layer of the partial composite semi-finished product to expose the core-shell quantum dots of the partial composite semi-finished product.
2. The quantum dot composite of claim 1, wherein the electron transport material layer encapsulates 1/2 core-shell quantum dots and exposes another 1/2 core-shell quantum dots.
3. The quantum dot composite of claim 1, wherein the material of the electron transport material layer is a metal oxide.
4. The quantum dot composite of claim 1, wherein the core-shell quantum dot comprises a core material and a shell material encapsulating the core material.
5. A method for preparing a quantum dot composite, comprising:
forming an electronic transmission material layer which wraps the core-shell quantum dots completely on the outer sides of the core-shell quantum dots to form a composite semi-finished product;
mixing a non-polar solvent and a polar solvent to form a phase-separated solution;
dissolving the semi-finished product of the compound into the non-polar solvent;
a part of the semi-finished compound product is in a polar solvent, and the other part of the semi-finished compound product is in a non-polar solvent;
and etching the electron transmission material layer of the partial composite semi-finished product to expose the core-shell quantum dots of the partial composite semi-finished product.
6. The method of claim 5, wherein etching the electron transport material layer of the partially composite semi-finished product comprises
And adding weak acid into the polar solvent, and etching the electron transport material layer of the partial composite semi-finished product through the weak acid.
7. The method for preparing quantum dot composite according to claim 6, wherein the weak acid comprises one or more of hypochlorous acid, boric acid, metasilicic acid and phenol.
8. The method of claim 5, wherein the step of exposing a portion of the composite semi-finished product to a polar solvent and another portion of the composite semi-finished product to a non-polar solvent comprises
And adding an aqueous phase quantum dot ligand into the polar solvent, so that part of the semi-finished product of the compound is in the polar solvent and is subjected to ligand exchange with the aqueous phase quantum dot ligand.
9. The method of claim 5, wherein the semi-finished product is mixed with the non-polar solvent at a mass ratio of 1:100 to 1: 2.
10. The method of claim 5, wherein the polar solvent and the nonpolar solvent are mixed in a volume ratio of 1:10 to 10: 1.
11. The method of claim 8, wherein the aqueous phase quantum dot ligand and the polar solvent are mixed in a mass ratio of 1:10 to 3: 1.
12. A light-emitting device comprising a light-emitting layer, an electron-transporting layer, and an interface layer between the light-emitting layer and the electron-transporting layer, the interface layer comprising the quantum dot composite according to any one of claims 1 to 4.
13. The light-emitting device according to claim 12, wherein the electron transport material layer of the quantum dot composite is located on a side of the core-shell quantum dots of the quantum dot composite away from the light-emitting layer.
14. A method for manufacturing a light-emitting device according to claim 13, comprising:
forming a light emitting layer;
forming a hydrophilic interface on the surface of the light-emitting layer;
forming an interface layer on a hydrophilic interface of the light-emitting layer, so that an electron transport material layer of the quantum dot composite in the interface layer is positioned on one side, away from the light-emitting layer, of the core-shell quantum dot of the quantum dot composite;
an electron transport layer is formed on the interfacial layer.
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| JP4863551B2 (en) * | 2001-01-22 | 2012-01-25 | 財団法人ファインセラミックスセンター | Quantum dot manufacturing method and quantum dot structure |
| US10700236B2 (en) * | 2016-03-17 | 2020-06-30 | Apple Inc. | Quantum dot spacing for high efficiency quantum dot LED displays |
| CN110098343B (en) * | 2019-05-20 | 2021-10-19 | 京东方科技集团股份有限公司 | Quantum dot composite and preparation method thereof, and light-emitting device and preparation method thereof |
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- 2019-05-20 CN CN201910418265.6A patent/CN110098343B/en active Active
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|---|---|---|---|---|
| CN108376750A (en) * | 2018-03-05 | 2018-08-07 | 南方科技大学 | Preparation method of quantum dot/zinc oxide core-shell structure and semiconductor device thereof |
| CN109256476A (en) * | 2018-09-19 | 2019-01-22 | 京东方科技集团股份有限公司 | Quantum dot light emitting layer, quantum dot light emitting device and preparation method |
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