CN110098292B - Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof - Google Patents

Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof Download PDF

Info

Publication number
CN110098292B
CN110098292B CN201910169560.2A CN201910169560A CN110098292B CN 110098292 B CN110098292 B CN 110098292B CN 201910169560 A CN201910169560 A CN 201910169560A CN 110098292 B CN110098292 B CN 110098292B
Authority
CN
China
Prior art keywords
type gan
quantum dot
gan layer
layer
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910169560.2A
Other languages
Chinese (zh)
Other versions
CN110098292A (en
Inventor
周小伟
訾亚丽
王燕丽
李培咸
许晟瑞
马晓华
郝跃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidian University
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN201910169560.2A priority Critical patent/CN110098292B/en
Publication of CN110098292A publication Critical patent/CN110098292A/en
Application granted granted Critical
Publication of CN110098292B publication Critical patent/CN110098292B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a blue-green quantum dot light-emitting diode based on a nanometer pattern and a preparation method thereof, and mainly solves the problems of low charge transmission efficiency and more surface defects of the existing blue-green quantum dot light-emitting diode. It includes from bottom to top: a substrate layer (1), an n-type GaN layer (2), InxGa1‑xA N single quantum dot layer (3) and a p-type GaN layer (4), wherein the N-type GaN layer is provided with a nano pattern with a diameter of 20-200nm, a height of 3-30nm and uniform distribution, and the In is InxGa1‑xThe N single quantum dot layers are positioned on the nanometer patterns. Compared with the traditional quantum dot light-emitting diode, the silicon oxide nano-sphere array is used as a mask, the uniformly distributed nano-patterns are obtained through the ICP etching technology, the quantum dots are directly grown on the nano-patterns, the charge transmission efficiency is improved, the surface dislocation is reduced, the high-efficiency blue-green quantum dot light-emitting diode can be obtained, and the blue-green quantum dot light-emitting diode can be used in blue-green light-emitting equipment.

Description

Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a quantum dot light emitting diode which can be used in blue-green light emitting equipment.
Background
Due to unique quantum effects such as size effect, quantum confinement effect, macroscopic quantum tunneling effect, surface effect and the like, the quantum dots show many physicochemical properties different from those of macroscopic materials, and have extremely wide application prospects in the aspects of nonlinear optics, magnetic media, catalysis, medicine, functional materials and the like. Particularly, the growth and properties of semiconductor quantum dots become the hot spot of current research due to the application of the semiconductor quantum dots in single-electron devices, memories, various photoelectric devices and the like.
In a semiconductor quantum dot device, a blue-green quantum dot light emitting diode is a common photoelectric device, and the structure of the blue-green quantum dot light emitting diode generally comprises a substrate, an electronic conducting layer, a quantum dot light emitting layer and a hole conducting layer, wherein the quantum dot light emitting layer is a colloidal quantum dot obtained through a chemical solution, and due to the existence of organisms in the colloidal quantum dot, the charge transmission efficiency is low, the energy level is not easy to control, and the surface defects are many, so that the photoelectric performance of the light emitting diode is seriously influenced.
Disclosure of Invention
The invention aims to provide a blue-green quantum dot light-emitting diode based on a nanometer pattern and a preparation method thereof aiming at the defects of the traditional blue-green quantum dot light-emitting diode, so as to improve the charge transmission efficiency of a quantum dot light-emitting layer, reduce surface defects and obtain the high-efficiency blue-green quantum dot light-emitting diode.
In order to achieve the above object, the blue-green quantum dot light emitting diode based on nano-pattern of the present invention comprises, from bottom to top: substrate layer, n type GaN layer, inxGa1-xN single quantum dot layer and p type GaN layer, its characterized in that: the n-type GaN layer is provided with nano patterns with the diameter of 20-200nm, the height of 3-30nm and uniform distribution, InxGa1-xThe N single quantum dot layer is positioned on the nanometer graph so as to improve the charge transmission efficiency of the quantum dots and reduce the surface dislocation density.
Preferably, the InxGa1-xThe thickness of the N single quantum dot layer is 5-50nm, and the adjustment range of the In content x is 0.15-0.5.
Preferably, the thickness of the p-type GaN layer is 100-400nm, and the doping concentration is 5 × 1017cm-1-5×1018cm-1。
Preferably, the n-type GaN structure of the nano-patternThe thickness of the doped layer is 2000-4000nm, and the doping concentration is adjusted to 6 x 1017cm-1-6×1018cm-1。
Preferably, the substrate layer is made of sapphire, silicon or silicon carbide.
In order to achieve the purpose, the preparation method of the blue-green quantum dot light-emitting diode based on the nanometer graph comprises the following steps:
1) heating the substrate in an MOCVD reaction furnace at 1100-1300 ℃;
2) growing an n-type GaN layer of 2000-4000nm on the pretreated substrate by using MOCVD equipment;
3) obtaining an n-type GaN layer with a nanosphere array on the surface by using a Czochralski method or a spin coating method on the n-type GaN layer, wherein the diameter of the nanospheres is 20-200nm, and the concentration of a nanosphere solution is 5-15%;
4) obtaining an n-type GaN layer with a nano pattern on the n-type GaN layer with the nanosphere array on the surface by utilizing an ICP (inductively coupled plasma) etching technology, wherein the etching thickness is 3-30nm, and washing away the nanospheres in a photoresist removing solution and a prepared HF (hydrogen fluoride) acid solution after etching;
5) growing In with the thickness of 5-50nm on the n-type GaN layer with the nano pattern by using MOCVD equipmentxGa1-xA N single quantum dot layer, the composition x of In ranging from 0.15 to 0.5;
6) inxGa1-xAnd growing a p-type GaN layer with the thickness of 100-400nm on the N single quantum dot layer by using MOCVD equipment, then maintaining the temperature of the reaction chamber at 750-850 ℃, and annealing for 5-10min under the atmosphere of N2 to finish the manufacture of the quantum dot light-emitting diode.
Compared with the traditional colloid quantum dot light-emitting diode, the invention uses the silicon oxide nanospheres as the mask, obtains the uniformly distributed nano pattern by the ICP etching technology, directly grows the quantum dots on the nano pattern, improves the transmission efficiency of charges, reduces surface dislocation and improves the performance of the blue-green quantum device.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a process for fabricating a blue-green quantum dot light emitting diode with a nano-pattern according to the present invention;
FIG. 3 is a structural diagram of a nanosphere array observed under a scanning electron microscope;
FIG. 4 is a structural diagram of a nanopillar array observed under a scanning electron microscope.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1, the device structure of the present invention comprises: substrate layer 1, n-type GaN layer 2 with nano-pattern, InxGa1-xN single quantum dot layer 3, p type GaN layer 4. Wherein the substrate layer 1 adopts sapphire or silicon carbide; the n-type GaN layer 2 with the nano-pattern is arranged on the substrate layer 1, the thickness is 2000-4000nm, and the doping concentration adjustment range is 6 multiplied by 1017cm-1-6×1018cm-1(ii) a The InxGa1-xThe N single quantum dot layer 3 is positioned on the N-type GaN layer 2 with the nanometer pattern, and the thickness is 5-50 nm; the p-type GaN layer 4 is located InxGa1-xA thickness of 100-400nm and a doping concentration of 5 × 10 on the N single quantum dot layer 317cm-1-5×1018cm-1。
InxGa1-xThe adjustment range of the In content x In the N single quantum dot layer 3 is 0.15-0.5, and quantum dot light-emitting diodes with different wavelengths can be obtained by using different In components.
Referring to fig. 2, the present invention provides three examples of preparing blue-green quantum dot light emitting diodes based on nanopatterns.
Example 1, a blue quantum dot light emitting diode having an emission wavelength of 420nm was prepared.
Step one, preprocessing a substrate.
Cleaning a sapphire substrate, placing the cleaned substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and reducing the vacuum degree of the reaction chamber to 120 Torr; introducing hydrogen into the reaction chamber, heating the substrate to 1300 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 150Torr, and keeping the temperature for 10min to finish the heat treatment of the substrate.
Step two, an n-type GaN layer is grown as in (a) of fig. 2.
And placing the pretreated substrate in MOCVD equipment, setting the temperature of a reaction chamber of the MOCVD equipment to be 1100 ℃, simultaneously introducing ammonia gas with the flow rate of 25000sccm, a silicon source with the flow rate of 8sccm and a gallium source with the flow rate of 340sccm, keeping the pressure at 300Torr, and growing an n-type GaN layer with the thickness of 2 microns on the pretreated substrate.
Step three, making a nano pattern, as shown in (b) - (d) of FIG. 2
First, coating nanospheres having a diameter of 20nm on an n-type GaN layer using a czochralski method to obtain an n-type GaN layer having an array of nanospheres on the surface thereof, wherein the concentration of the nanospheres is 15%, as shown in fig. 2 (b); the nanosphere array structure of the n-type GaN layer with the nanosphere array on the surface is observed under a scanning electron microscope, as shown in FIG. 3;
then, a nanopattern with a height of 20nm was obtained on the n-type GaN layer with the nanosphere array on the surface using ICP etching technique as shown in (c) of fig. 2, and then the nanospheres were washed off in a deglued solution and a prepared HF acid solution to obtain an n-type GaN layer with a nanopattern as shown in (d) of fig. 2, and the structure of the n-type GaN layer with a nanopattern observed under a scanning electron microscope is as shown in fig. 4.
Step four, growing In0.15Ga0.85N single quantum dot structures, as in (e) of fig. 2.
Growing In with the thickness of 5nm In the reaction chamber by using MOCVD equipment on the n-type GaN layer with the nano-pattern0.15Ga0.85And the flow rate of a nitrogen source is kept at 30000sccm, the temperature is kept at 800 ℃, the pressure is kept at 350Torr, the flow rate of a gallium source is kept at 340sccm, and the flow rate of an indium source is kept at 480sccm in the growth process of the N single quantum dots.
And step five, growing a p-type GaN layer as shown in (f) of FIG. 2.
In0.15Ga0.85Introducing ammonia gas with the flow rate of 35000sccm, a gallium source with the flow rate of 38sccm and a magnesium source with the flow rate of 1800sccm simultaneously into the N single quantum dots by using MOCVD equipment under the conditions that the temperature of a reaction chamber is 980 ℃ and the pressure is 150Torr, and growing a p-type GaN layer with the thickness of 100 nm; then the reaction chamberThe temperature is maintained at 750 ℃ in N2And annealing for 10min under the atmosphere to finish the manufacture of the blue light quantum dot light-emitting diode with the light-emitting wavelength of 420 nm.
Example 2 preparation of a Green Quantum dot light emitting diode having a light emission wavelength of 570nm
Step 1, preprocessing a substrate.
And placing the cleaned silicon substrate in an MOCVD reaction chamber, reducing the vacuum degree of the reaction chamber to 110Torr, introducing hydrogen into the reaction chamber, heating the substrate to 1200 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 120Torr, and keeping the temperature for 10min to finish the heat treatment of the substrate.
Step 2, an n-type GaN layer is grown as in (a) of fig. 2.
Growing an n-type GaN layer with the thickness of 4 mu m on the pretreated substrate by using MOCVD equipment, wherein the process conditions are as follows:
the temperature of the reaction chamber is 1000 ℃, the pressure is 350Torr, the flow of ammonia gas is 30000sccm, the flow of the gallium source is 340sccm, and the flow of the silicon source is 16 sccm.
And 3, manufacturing a nano pattern with the height of 30nm on the n-type GaN layer, wherein the nano pattern is shown as (b) to (d) in the figure 2.
3.1) coating nanospheres with the diameter of 200nm on the n-type GaN layer by using a spin coating method, wherein the concentration of the nanosphere solution is 5%, as shown in (b) in FIG. 2, and the nanosphere array structure of the n-type GaN layer with the nanosphere array on the surface is observed under a scanning electron microscope, as shown in FIG. 3;
3.2) etching the n-type GaN layer with nanospheres on the surface using the ICP etching technique to an etching height of 30nm as shown in (c) of FIG. 2;
3.3) washing away the nanospheres in the degumming solution and the prepared HF acid solution to obtain the n-type GaN layer with the nanopillars as shown in (d) of FIG. 2, wherein the structure of the n-type GaN layer with the nanopatterns observed under a scanning electron microscope is shown in FIG. 4.
Step 4, growing In0.5Ga0.5N single quantum dot structures, as in (e) of fig. 2.
On the n-type GaN layer with the nanometer pattern, MOCVD is usedPreparing In with a thickness of 50nm grown In the reaction chamber0.5Ga0.5The growth process conditions of the N single quantum dots are as follows:
the nitrogen source flow was maintained at 25000sccm, the temperature was maintained at 900 ℃, the pressure was maintained at 400Torr, the gallium source flow was maintained at 340sccm, and the indium source flow was maintained at 1500 sccm.
Step 5, growing a p-type GaN layer as shown in (f) of FIG. 2.
5.1) In0.5Ga0.5Growing a p-type GaN layer with the thickness of 400nm on the N single quantum dots by using MOCVD equipment, wherein the process conditions are as follows:
the temperature of the reaction chamber is 1000 ℃, and the pressure is 200 Torr;
the flow rate of ammonia gas is 40000sccm, the flow rate of a gallium source is 35sccm, and the flow rate of a magnesium source is 2000 sccm;
5.2) maintaining the temperature of the reaction chamber at 850 ℃ under N2And annealing for 10min under the atmosphere to finish the manufacture of the green light quantum dot light-emitting diode with the light-emitting wavelength of 570 nm.
Example 3, a green quantum dot light emitting diode having an emission wavelength of 505nm was prepared.
And step A, preprocessing the substrate.
Cleaning a silicon carbide substrate, placing the cleaned silicon carbide substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and reducing the vacuum degree of the reaction chamber to 130 Torr; introducing hydrogen into the reaction chamber, heating the substrate to 1100 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 140Torr, and keeping the temperature for 10min to finish the heat treatment of the substrate.
Step B, an n-type GaN layer is grown as in (a) of fig. 2.
And growing an n-type GaN layer with the thickness of 3 microns on the pretreated substrate by using MOCVD equipment under the process conditions that the temperature of the reaction chamber is 1050 ℃, the pressure is 330Torr, the flow of ammonia gas is 28000sccm, the flow of a silicon source is 15sccm and the flow of a gallium source is 340 sccm.
And step C, manufacturing a nano pattern, such as (b) - (d) in the figure 2.
Coating nanospheres with a diameter of 100nm on the n-type GaN layer at a concentration of 10% in the nanosphere solution using spin coating as shown in (b) of FIG. 2, wherein the nanosphere array structure of the n-type GaN layer with the nanosphere array on the surface is observed under a scanning electron microscope as shown in FIG. 3;
then, obtaining a nano pattern with the height of 10nm by using an ICP (inductively coupled plasma) etching technology to obtain an n-type GaN layer with the nano pattern as shown in (c) of figure 2;
and then washing away the nanospheres on the surface of the n-type GaN layer by using the glue solution and the configured HF acid solution to obtain the n-type GaN layer with the nano pattern as shown in (d) in FIG. 2, wherein the structure of the n-type GaN layer with the nano pattern observed under a scanning electron microscope is shown in FIG. 4.
Step D, growing In0.35Ga0.65N single quantum dot structures, as in (e) of fig. 2.
Growing In with a thickness of 20nm on the n-type GaN layer with the nano-pattern by using an MOCVD apparatus under the conditions that the nitrogen source flow rate of the reaction chamber is maintained at 28000sccm, the temperature is maintained at 850 ℃, the pressure is maintained at 380Torr, the gallium source flow rate is maintained at 340sccm, and the indium source flow rate is maintained at 1000sccm0.35Ga0.65N single quantum dots.
Step E, a p-type GaN layer is grown as in (f) of fig. 2.
In0.35Ga0.65Growing a p-type GaN layer with the thickness of 250nm on the N single quantum dot by using MOCVD equipment under the conditions that the temperature of a reaction chamber is 950 ℃, the pressure is 250Torr, the flow of ammonia gas is 45000sccm, the flow of a gallium source is 45sccm and the flow of a magnesium source is 2200 sccm; the temperature of the reaction chamber was then maintained at 800 ℃ under N2And annealing for 10min under the atmosphere to finish the manufacture of the green light quantum dot light-emitting diode with the light-emitting wavelength of 505 nm.
The foregoing description is only three specific examples of the present invention and should not be construed as limiting the invention in any way, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principle and structure of the invention, but these modifications and variations will still fall within the scope of the appended claims.

Claims (9)

1. The utility model provides a blue-green quantum dot light emitting diode based on nanometer figure includes from bottom to top: a substrate layer (1), an n-type GaN layer (2), InxGa1-xN single quantum dot layer (3) and p type GaN layer (4), its characterized in that: the n-type GaN layer (2) is provided with nano patterns with the diameter of 20-200nm, the height of 3-30nm and uniform distribution, and In grows on the n-type GaN layer with the nano patternsxGa1-xAnd the N single quantum dot layer (3) is used for improving the charge transmission efficiency of the quantum dots and reducing the surface dislocation density, and the adjustment range of the In content x is 0.15-0.5.
2. The led of claim 1, wherein: said InxGa1-xAnd the thickness of the N single quantum dot layer (3) is 5-50 nm.
3. The led of claim 1, wherein: the thickness of the p-type GaN layer (4) is 100-400 nm.
4. The led of claim 1, wherein: the thickness of the n-type GaN layer (2) with the nano-pattern is 2000-4000nm, and the adjustment range of the doping concentration is 6 multiplied by 1017cm-1-6×1018cm-1。
5. The led of claim 1, wherein: the substrate layer (1) is made of sapphire, silicon or silicon carbide.
6. A preparation method of a blue-green quantum dot light-emitting diode based on a nanometer pattern is characterized by comprising the following steps:
1) heating the substrate in an MOCVD reaction furnace at 1100-1300 ℃;
2) growing an n-type GaN layer of 2000-4000nm on the pretreated substrate by using MOCVD equipment;
3) obtaining an n-type GaN layer with a nanosphere array on the surface by using a Czochralski method or a spin coating method on the n-type GaN layer, wherein the diameter of the nanospheres is 20-200nm, and the concentration of a nanosphere solution is 5-15%;
4) obtaining an n-type GaN layer with a nano pattern on the n-type GaN layer with the nanosphere array on the surface by utilizing an ICP (inductively coupled plasma) etching technology, wherein the etching thickness is 3-30nm, and washing away the nanospheres in a photoresist removing solution and a prepared HF (hydrogen fluoride) acid solution after etching;
5) growing In with the thickness of 5-50nm on the n-type GaN layer with the nano pattern by using MOCVD equipmentxGa1-xA N single quantum dot layer, wherein the composition x of In is In the range of 0.15-0.5;
6) inxGa1-xGrowing a p-type GaN layer with the thickness of 100-400nm on the N single quantum dot layer by using MOCVD equipment, and then maintaining the temperature of the reaction chamber at 750-850 ℃ under N2And annealing for 5-10min under the atmosphere to finish the manufacture of the quantum dot light-emitting diode.
7. The method of claim 6, wherein the n-type GaN layer is grown in step 2) by using MOCVD equipment under the following process conditions:
the temperature of the reaction chamber is 1050 ℃ and 1100 ℃,
the pressure in the reaction chamber is kept at 300-350Torr,
simultaneously introducing ammonia gas with the flow rate of 25000 and 30000sccm and a silicon source with the flow rate of 8-20sccm into the reaction chamber.
8. The method of claim 6, wherein In is grown In step 5) using a MOCVD apparatusxGa1-xThe process conditions of the N single quantum dot layer are as follows:
the temperature of the reaction chamber is 800-900 ℃,
the pressure in the reaction chamber is kept at 350-400Torr,
ammonia gas with the flow rate of 25000-30000sccm and indium source with the flow rate of 480-1600sccm are simultaneously introduced into the reaction chamber.
9. The method of claim 6, wherein the p-type GaN layer is grown in step 6) by using MOCVD equipment under the following process conditions:
the temperature of the reaction chamber is 950 ℃ and 1100 ℃,
the pressure in the reaction chamber was maintained at 150 ℃ and 250Torr,
simultaneously introducing ammonia gas with the flow rate of 35000-.
CN201910169560.2A 2019-03-06 2019-03-06 Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof Active CN110098292B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910169560.2A CN110098292B (en) 2019-03-06 2019-03-06 Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910169560.2A CN110098292B (en) 2019-03-06 2019-03-06 Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof

Publications (2)

Publication Number Publication Date
CN110098292A CN110098292A (en) 2019-08-06
CN110098292B true CN110098292B (en) 2022-04-29

Family

ID=67443859

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910169560.2A Active CN110098292B (en) 2019-03-06 2019-03-06 Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof

Country Status (1)

Country Link
CN (1) CN110098292B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060027133A (en) * 2004-09-22 2006-03-27 엘지이노텍 주식회사 Light emitting diode and method for manufacturing led
CN101315968A (en) * 2008-07-04 2008-12-03 西安电子科技大学 Production method of GaN multi-layer quantum point photoelectric material
CN102244167A (en) * 2011-07-28 2011-11-16 北京大学 Method for preparing single chip white light LED (light-emitting diode)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101241477B1 (en) * 2006-01-27 2013-03-08 엘지이노텍 주식회사 Nitride semiconductor light-emitting device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060027133A (en) * 2004-09-22 2006-03-27 엘지이노텍 주식회사 Light emitting diode and method for manufacturing led
CN101315968A (en) * 2008-07-04 2008-12-03 西安电子科技大学 Production method of GaN multi-layer quantum point photoelectric material
CN102244167A (en) * 2011-07-28 2011-11-16 北京大学 Method for preparing single chip white light LED (light-emitting diode)

Also Published As

Publication number Publication date
CN110098292A (en) 2019-08-06

Similar Documents

Publication Publication Date Title
CN102760798B (en) Manufacturing method of LED
CN105070805B (en) Silicon-based nitride ultraviolet LED epitaxial structure and implementation method thereof
CN106783948B (en) InN nano-pillar epitaxial wafer grown on Si substrate and preparation method thereof
CN108206130B (en) Indium nitride nano-pillar epitaxial wafer grown on aluminum foil substrate and preparation method thereof
CN106981549B (en) Gallium nitride nano-pillar LED epitaxial wafer grown on silicon substrate and preparation method thereof
WO2018040124A1 (en) Preparation method for and application of non-polar led epitaxial wafer growing on r-plane sapphire substrate
CN102420277B (en) Method for preparing active layer structure with high-density gallium nitride quantum dots
CN104538521A (en) High-brightness near ultraviolet LED and preparation method thereof
CN115714155A (en) Deep ultraviolet light emitting diode epitaxial wafer, preparation method thereof and deep ultraviolet light emitting diode
CN110444640A (en) A kind of multi-wavelength GaN base core-shell nanometer rod LED device structure and preparation method thereof
WO2022127093A1 (en) V-shaped tunneling junction led epitaxial structure based on h-bn and preparation method therefor
CN110364606A (en) A kind of UV LED epitaxial structure and preparation method thereof
JP2008034482A (en) Compound semiconductor light-emitting element, illumination apparatus using the same and method of manufacturing the compound semiconductor element
CN104576326B (en) A kind of silicon based III-V group gallium arsenide semiconductor material preparation method and system
CN104952987B (en) Light emitting diode
CN100585895C (en) Production method of GaN multi-layer quantum point photoelectric material
CN110098292B (en) Blue-green quantum dot light-emitting diode based on nano-pattern and preparation method thereof
CN110112268B (en) Ultraviolet quantum dot light-emitting diode based on nano-graph and preparation method
Lin et al. Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN: Mg layer through a chemical bath deposition process
CN115810697A (en) Silicon-based ultraviolet LED epitaxial structure, preparation method thereof and ultraviolet LED
CN109860355A (en) Deep ultraviolet LED preparation method
CN114373837B (en) AlGaN-based deep ultraviolet light-emitting diode device structure and preparation method thereof
CN106169523B (en) A kind of LED epitaxial wafer and preparation method thereof grown on a si substrate using L-MBE and MOCVD technology
CN113013299B (en) Light emitting diode epitaxial wafer and growth method thereof
CN107689405A (en) Ultraviolet led epitaxial structure and its growing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant