CN110095200A - A kind of heat-sensitive sensor and preparation method thereof based on Spin crossover - Google Patents
A kind of heat-sensitive sensor and preparation method thereof based on Spin crossover Download PDFInfo
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- CN110095200A CN110095200A CN201910389588.7A CN201910389588A CN110095200A CN 110095200 A CN110095200 A CN 110095200A CN 201910389588 A CN201910389588 A CN 201910389588A CN 110095200 A CN110095200 A CN 110095200A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
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Abstract
The present invention provides a kind of heat-sensitive sensor and preparation method thereof based on Spin crossover, belongs to technical field of semiconductors.The present invention is a kind of heat-sensitive sensor based on Spin crossover, including [Fe (Htrz)3](CF3SO3)2Film is used for carrying or sandwiched [Fe (Htrz)3](CF3SO3)2The conduction device of film, conduction device are for carrying [Fe (Htrz)3](CF3SO3)2The plastic flexible substrate of film is used for [Fe (Htrz) described in sandwiched3](CF3SO3)2The double layer of metal electrode layer of film.The present invention utilizes Spin crossover [Fe (Htrz)3](CF3SO3)2Thermal sensitivity, and the changed characteristic of resistance in the case where temperature change prepares the high sensor of thermal sensitivity.Due to Spin crossover reversible responsiveness unique for temperature outfield, and this response, also not by the interference of other extraneous factors, so the sensor of preparation has, high sensitivity, precision are high, thermal response is fast, reproducible.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of heat-sensitive sensor based on Spin crossover and
Preparation method.
Background technique
With traditional silicon-based semiconductor devices trend toward miniaturization increasingly level off to technique manufacture and physical property pole
Limit, and the rapid development of nanotechnology in recent years, this rule of the Moore's Law of chip industry will be walked to be at the end.Due to certainly
The unique molecule bistable characteristic of body is led in molecular electronic devices such as the novel information storage of molecular level, photoswitch, thermal switch
Domain has boundless application prospect, and switching mode molecule has been also considered as once receiving much attention
Prestige can replace traditional inorganic semiconductor material to a certain extent, be expected in future be that the limitation of Moore's Law is overcome to mention
For the solution of some practicables.
As a kind of than switching mode molecule that is more typical and being widely studied, Spin crossover refers to certain tools
There is dnThe First Transition metal ion match of (n=4~7) electron configuration, in specific outfield such as temperature, pressure, illumination, magnetic
High spin state occurs under the equal excitation of field5T2g(S=2) and low spin state1A1gBetween (S=0) the phenomenon that phase co-conversion, this phenomenon
That is spin transformation, also referred to as spin transition.This spin, which changes, is often accompanied by some other synergistic effect, such as color
Change, the variation of dielectric constant, the variation of conductivity and biggish heat stagnation aftereffect etc., these synergistic effects are individual molecules
Or basis of the molecule aggregate as thermal switch, photoswitch and information storage elements material.Therefore, spin crossover molecule is exploitation
The ideal molecular system of novel heat-sensitive sensor, photo-thermal switch and information recording device.But spin crossover phenomenon is sent out certainly
Since existing, device application greatly limits the holistic approach of spin crossover, basic reason is difficulty always without too quantum jump
To prepare, reliable and stable, thickness is controllable, molecular film with spin transformation.
Heat-sensitive sensor is due to having the characteristics that good stability, good linearity, the response time is short, applicability is good, in sensor
Field has important influence power and is widely applied background, not only directly affects the basic living condition of the mankind, but also right
Industrial or agricultural, biological products, health care, environmental protection industry (epi), power system monitoring, national defense construction and aerospace etc. have
Extreme influence.Traditional heat-sensitive sensor generallys use rigid inorganic material, and flexibility is poor, and accessory circuit element compared with
More, later maintenance is not very convenient, higher cost, especially some winding carved and diaphragm type sensor.Further, since traditional
Heat-sensitive sensor usually has heat stagnation aftereffect, and sensitivity is restricted, and precision is also difficult to be guaranteed.These disadvantages to pass
The heat-sensitive sensor of system is difficult to be applied in the electronic device increasingly minimized such as wearable electronic product, in these productions
In product, other than the requirement of basic performance, sensor and product is integrated toward contact needs, form integrated system
System.In addition often there is the case where overheat in the charging equipment that we use now, do not prompt, can set off an explosion on mobile phone
There are security risks.
Summary of the invention
In view of this, the present invention provides a kind of heat-sensitive sensor and preparation method thereof based on Spin crossover, spirit
The Spin crossover that sensitivity is high, precision is high, thermal response is fast, reproducible, flexibility is good and structure is simple, at low cost passes
Sensor.
The present invention is a kind of heat-sensitive sensor based on Spin crossover, including [Fe (Htrz)3](CF3SO3)2It is thin
Film is used for [Fe (Htrz) described in carrying or sandwiched3](CF3SO3)2The conduction device of film, the conduction device are for carrying
[the Fe (Htrz)3](CF3SO3)2The plastic flexible substrate of film is used for [Fe (Htrz) described in sandwiched3](CF3SO3)2Film
Double layer of metal electrode layer.
Preferably, the plastic flexible substrate be one of polyethylene terephthalate, polyimides or
Two kinds.
Preferably, the material of the metal electrode layer be one of aluminium, gold, silver, iron, cobalt, nickel, lanthanum strontium manganese oxygen or
It is a variety of.
Preferably, [the Fe (Htrz)3](CF3SO3)2Film with a thickness of 10-1000 nm.
Preferably, [the Fe (Htrz)3](CF3SO3)2Film has spin conversion characteristic, and simultaneous is significant
Resistance variations, the low spin state under low temperature, conductance is low resistance state, and the high spin state under high temperature, conductance is high-impedance state.
A kind of a kind of preparation method of the heat-sensitive sensor based on Spin crossover as previously described, including it is following
Step:
(1) by the trifluoromethane sulfonic acid solution of trifluoromethane sulfonic acid ferrous iron that mass fraction is 1.8-2.2%, 1,2,4- triazole
Trifluoromethane sulfonic acid solution is quickly mixed, and it is complete that the solution after reaction is then placed or so 1 half a month under steady state conditions, a reactor
At crystallization, the concentration of trifluoromethane sulfonic acid solution is 0.4-1.5mol/L；
(2) precipitating in solution is the processes such as be centrifuged to, washed, dried, obtains [Fe (Htrz)3](CF3SO3)2It is single
It is brilliant；
(3) by [Fe (Htrz)3](CF3SO3)2Monocrystalline is configured to the [Fe (Htrz) that mass concentration is 18-22 mg/ml3]
(CF3SO3)2Solution；
(4) by [Fe (Htrz) described in step (2)3](CF3SO3)2Monocrystalline is made up on conduction device thin of vacuum evaporation
Film, so that [Fe (Htrz)3](CF3SO3)2Film be adhered on plastic flexible substrate or be folded in double layer of metal electrode layer it
Between.
(5) by [Fe (Htrz) described in step (3)3](CF3SO3)2Solution is made on conduction device by solution spin-coating method
At film, so that [Fe (Htrz)3](CF3SO3)2Film is adhered on plastic flexible substrate or is folded in double layer of metal electrode
Between layer.
Wherein, when using [Fe (Htrz)3](CF3SO3)2When monocrystalline, vapor deposition method particularly includes: 4 × 10-4 Pa's is true
Hot evaporation is carried out in air atmosphere, evaporation rate is 0.1-0.5 nm/s.When using [Fe (Htrz)3](CF3SO3)2When solution, institute
Stating solvent used in solution spin-coating method is propionitrile.
The present invention utilizes Spin crossover [Fe (Htrz)3](CF3SO3)2Thermal sensitivity, and in temperature change
In the case of the changed characteristic of resistance, prepare the high sensor of thermal sensitivity.Since Spin crossover is for temperature outfield
Unique reversible responsiveness, and this response is also by the interference of other extraneous factors, so the sensor of preparation has spirit
The advantages that sensitivity is high, precision is high, thermal response is fast, reproducible, flexibility is good and structure is simple, at low cost, long service life,
It can be adapted for all kinds of miniaturized devices especially wearable electronic product, can also be applied to the temperature of some back yard industry instruments
Overheating protection.
Detailed description of the invention
Fig. 1 is a kind of heat-sensitive sensor and its system based on Spin crossover that the specific embodiment of the invention provides
The Preparation Method, [Fe (Htrz) prepared3](CF3SO3)2Dependence graph of the magnetic susceptibility of film for temperature；
Fig. 2 provides a kind of based on the heat-sensitive sensor of Spin crossover and its preparation side for the specific embodiment of the invention
The structural schematic diagram for the heat-sensitive sensor that method is prepared；
Fig. 3 is the another temperature-sensitive that a kind of heat-sensitive sensor and preparation method thereof based on Spin crossover provided is prepared
The structural schematic diagram of sensor；
Fig. 4 is the another temperature-sensitive that a kind of heat-sensitive sensor and preparation method thereof based on Spin crossover provided is prepared
The structural schematic diagram of sensor.
Specific embodiment
Embodiment one
Fig. 1, Fig. 2 are please referred to, it is portable to can be applied to smart phone etc. for a kind of novel flexible Self-adhesive heat-sensitive sensor
In consumption electronic product.
The present invention is a kind of heat-sensitive sensor based on Spin crossover, including [Fe (Htrz)3](CF3SO3)2It is thin
Film, for carrying [the Fe (Htrz)3](CF3SO3)2The plastic flexible substrate of film, the plastic flexible substrate are to be
Polyethylene terephthalate or polyimides, preferably, [the Fe (Htrz)3](CF3SO3)2Film with a thickness of
10nm。
[the Fe (Htrz)3](CF3SO3)2Film have spin conversion characteristic, the significant resistance variations of simultaneous,
Low spin state under low temperature, conductance are low resistance state, and the high spin state under high temperature, conductance is high-impedance state.
A kind of a kind of preparation method of the heat-sensitive sensor based on Spin crossover as previously described, including it is following
Step:
(1) by mass fraction be 1.8% the trifluoromethane sulfonic acid solution of trifluoromethane sulfonic acid ferrous iron, 1,2,4- triazole trifluoro
Methanesulfonic acid solution is quickly mixed, and then the solution after reaction is placed or so 1 half a month under steady state conditions, a reactor and is completed knot
Crystalline substance, the concentration of trifluoromethane sulfonic acid solution are 0.4mol/L；
(2) precipitating in solution is the processes such as be centrifuged to, washed, dried, obtains [Fe (Htrz)3](CF3SO3)2It is single
It is brilliant；
(3) by [Fe (Htrz)3](CF3SO3)2Monocrystalline is configured to the [Fe (Htrz) that mass concentration is 18-22 mg/ml3]
(CF3SO3)2Solution；
(4) by [Fe (Htrz) described in step (2)3](CF3SO3)2Monocrystalline is made up on conduction device thin of vacuum evaporation
Film, or by [Fe (Htrz) described in step (3)3](CF3SO3)2Solution is made up on conduction device thin of solution spin-coating method
Film, so that [Fe (Htrz)3](CF3SO3)2Film is adhered on plastic flexible substrate.
Vapor deposition method particularly includes: 4 × 10-4 Hot evaporation is carried out in the vacuum atmosphere of Pa, evaporation rate is 0.4 nm/
s.Solvent used in the solution spin-coating method is propionitrile.(rate of vapor deposition is production prepared within the scope of 0.1-0.5 nm/s
Product similar performance).
[Fe(Htrz)3](CF3SO3)2Film has the spin conversion characteristic of temperature-independent, in heating direction, spin transformation
Temperature is 62 DEG C, and in cooling direction, spin transition temperature is 10 DEG C.The significant color of simultaneous and resistance variations, low temperature
Lower film is purple, and film is light blue under high temperature.
Flexible substrate in the present embodiment is Pasting flexible substrate, can be adhered in electronic product.
During the charging process, when overshoot occurs for product or fever is severe, user is risen by color change and is mentioned
It wakes up and acts on, the accidents such as battery explosion caused by avoiding device from overheating.The core component of the heat-sensitive sensor is to receive with a thickness of several hundred
The Spin crossover film of rice is grown in the good flexible liner of thermal conductivity by the method that vacuum evaporation or solution are processed
On bottom, as shown in Fig. 2, entire flexible sensor is small in size, and flexibility is preferable, is made into simple Self-adhesive as needed and produces
Product, directly combine with the shell of portable equipment use.
When user uses the portable equipments such as mobile phone or equipment to be in overcharge condition for a long time, with mobile phone temperature
Degree gradually rises, and spin crossover transformation can occur for Spin crossover film, be changed into high spin state from low spin state, passes
The color of sensor becomes light blue from purple, to achieve the purpose that call user's attention.
Embodiment two
The present invention is a kind of heat-sensitive sensor based on Spin crossover, including [Fe (Htrz)3](CF3SO3)2Film, use
[the Fe (Htrz) described in sandwiched3](CF3SO3)2The double layer of metal electrode layer of film forms sandwich structure, [Fe (Htrz)3]
(CF3SO3)2Film is clipped in the middle by electrode, and the material of metal electrode layer is aluminium, the product that metal electrode layer gold, silver are prepared with
It is similar in the present embodiment.
[the Fe (Htrz)3](CF3SO3)2Film with a thickness of 1000 nm.[the Fe (Htrz)3](CF3SO3)2Film
With spin conversion characteristic, the significant resistance variations of simultaneous, the low spin state under low temperature, conductance is low resistance state, high temperature
Under high spin state, conductance is high-impedance state.
A kind of a kind of preparation method of the heat-sensitive sensor based on Spin crossover as previously described, including it is following
Step:
(1) by mass fraction be 2.2% the trifluoromethane sulfonic acid solution of trifluoromethane sulfonic acid ferrous iron, 1,2,4- triazole trifluoro
Then solution after reaction is placed 1 half a month and completes crystallization, the concentration of trifluoromethane sulfonic acid solution by methanesulfonic acid solution mixing
For 1.5mol/L；
(2) by the precipitation and centrifugal separation in solution, washing, drying, [Fe (Htrz) is obtained3](CF3SO3)2Monocrystalline；
(3) by [Fe (Htrz) described in step (2)3](CF3SO3)2Monocrystalline is made up on conduction device thin of vacuum evaporation
Film, so that [Fe (Htrz)3](CF3SO3)2Film is folded between double layer of metal electrode layer.
The product prepared is that the novel intelligent heat-sensitive sensor of one kind can be applied to the portable consumers such as smart phone
Electronic product.
Heat-sensitive sensor is made of Spin crossover film and upper layer and lower layer membrane electrode, metal electrode therein
For non magnetic electrode, such as aluminium, gold, silver etc. forms the diode of a sandwich structure, as shown in Fig. 3, each functional layer
Film realizes that thickness arrives hundreds of nanometers tens by the method that vacuum evaporation or solution are processed.
When user uses the portable equipments such as mobile phone or equipment to be in overcharge condition for a long time, on the one hand, with
Mobile phone temp gradually rise, superheating phenomenon can occur for device, and the electronic structure of Spin crossover film is from low spin state
It is changed into high spin state, simultaneous film color becomes light blue from purple, achievees the effect that warn user.Another party
Face, it is smaller in low spin state resistance since along with spin transformation variation also occurs for the resistance of spin crossover film, it is high from
State is revolved, device resistance significantly becomes larger, and in superheat state, film is in high-impedance state, can play in time and be automatically stopped charging
Effect.
Embodiment three
The present invention is a kind of heat-sensitive sensor based on Spin crossover, including [Fe (Htrz)3](CF3SO3)2Film, use
[the Fe (Htrz) described in sandwiched3](CF3SO3)2The conduction device of film, the conduction device are for [Fe described in sandwiched
(Htrz)3](CF3SO3)2The double layer of metal electrode layer of film, the material of metal electrode layer are iron, metal electrode layer be cobalt, nickel,
The performance of the product that lanthanum strontium manganese oxygen is prepared and the present embodiment it is close.
[the Fe (Htrz)3](CF3SO3)2Film with a thickness of 500nm.
[the Fe (Htrz)3](CF3SO3)2Film have spin conversion characteristic, the significant resistance variations of simultaneous,
Low spin state under low temperature, conductance are low resistance state, and the high spin state under high temperature, conductance is high-impedance state.
A kind of a kind of preparation method of the heat-sensitive sensor based on Spin crossover as previously described, including it is following
Step:
(1) by mass fraction be 2.0% the trifluoromethane sulfonic acid solution of trifluoromethane sulfonic acid ferrous iron, 1,2,4- triazole trifluoro
Methanesulfonic acid solution is quickly mixed, and then the solution after reaction is placed or so 1 half a month under steady state conditions, a reactor and is completed knot
Crystalline substance, the concentration of trifluoromethane sulfonic acid solution are 1.0mol/L；
(2) precipitating in solution is centrifuged and the processes such as is separated, washs, dries, obtain [Fe (Htrz)3](CF3SO3)2It is single
It is brilliant；
(3) by [Fe (Htrz) described in step (2)3](CF3SO3)2Monocrystalline is made up on conduction device thin of vacuum evaporation
Film, so that [Fe (Htrz)3](CF3SO3)2Film is adhered to plastics and is folded between double layer of metal electrode layer.
The heat-sensitive sensor prepared in the present embodiment can be applied to the portable consumer electronics product such as smart phone.
As shown in Fig. 4, heat-sensitive sensor is connect with electronic product, power supply point, heat-sensitive sensor is matched by spin crossover
Object film and upper layer and lower layer membrane electrode composition are closed, metal electrode therein is ferromagnetic electrode, such as iron, cobalt, nickel etc., shape
At an organic spin valve device, the function of Spin Valve is exactly the spin when intermediate spin crossover film and two ferromagnetic electrodes
When being orientated consistent, resistance is minimum, and when spin orientation is opposite, resistance is maximum.Each functional layer film passes through vacuum
Vapor deposition or the method for solution processing realize that thickness arrives hundreds of nanometers tens.
When user uses the portable equipments such as mobile phone or equipment to be in overcharge condition for a long time, on the one hand, with
Mobile phone temp gradually rise, superheating phenomenon can occur for device, and the electronic structure of Spin crossover film is from low spin state
It is changed into high spin state, simultaneous film color becomes light blue from purple, achievees the effect that warn user.Another party
Face, when Spin crossover is changed into high spin state, the electron spin orientation of spin crossover film and the electronics of membrane electrode
On the contrary, Spin Valve shows as high-impedance state, electric current not easily passs through spin orientation, in addition, the resistance of film is also significant in high spin state
Become larger, entire sensor shows as high-impedance state at this time, can play the role of being automatically stopped charging in time.
In addition, general battery product is at quite low temperatures, it can be shortened using the time, and battery life can also become
It is short.When combining intelligent heat-sensitive sensor in use, in colder environment, Spin crossover shows as low spin state, and one
Aspect resistance itself becomes smaller, on the other hand, the electron spin of the electron spin orientation of spin crossover film and membrane electrode at this time
Orientation is consistent, and Spin Valve shows as low resistance state, and circuit conducting can provide charging to portable device, can cope with one in this way
A little emergencies use.
The present invention utilizes Spin crossover [Fe (Htrz)3](CF3SO3)2Thermal sensitivity, and in temperature change
In the case of the changed characteristic of resistance, prepare the high sensor of thermal sensitivity.Since Spin crossover is for temperature outfield
Unique reversible responsiveness, and this response is also by the interference of other extraneous factors, so the sensor of preparation has spirit
The advantages that sensitivity is high, precision is high, thermal response is fast, reproducible, flexibility is good and structure is simple, at low cost, long service life,
It can be adapted for all kinds of miniaturized devices especially wearable electronic product, can also be applied to the temperature of some back yard industry instruments
Overheating protection.
The present invention is not limited to above-mentioned specific embodiment, and the invention may be variously modified and varied.All foundations
Technical spirit of the invention should be included in the present invention to embodiment of above any modification, equivalent replacement, improvement and so on
Protection scope.
Claims (10)
1. a kind of heat-sensitive sensor based on Spin crossover, which is characterized in that including [Fe (Htrz)3](CF3SO3)2It is thin
Film is used for [Fe (Htrz) described in carrying or sandwiched3](CF3SO3)2The conduction device of film, the conduction device are for carrying
[the Fe (Htrz)3](CF3SO3)2The plastic flexible substrate of film is used for [Fe (Htrz) described in sandwiched3](CF3SO3)2Film
Double layer of metal electrode layer.
2. a kind of heat-sensitive sensor based on Spin crossover according to claim 1, which is characterized in that the modeling
Material flexible substrate is one or both of polyethylene terephthalate, polyimides.
3. a kind of heat-sensitive sensor based on Spin crossover according to claim 2, which is characterized in that the gold
The material for belonging to electrode layer is one of aluminium, gold, silver, iron, cobalt, nickel, lanthanum strontium manganese oxygen or a variety of.
4. a kind of heat-sensitive sensor based on Spin crossover according to claim 2, which is characterized in that described
[Fe(Htrz)3](CF3SO3)2Film with a thickness of 10-1000 nm.
5. a kind of heat-sensitive sensor based on Spin crossover according to claim 2, which is characterized in that described
[Fe(Htrz)3](CF3SO3)2Film has a spin conversion characteristic, the significant resistance variations of simultaneous, under low temperature it is low from
State is revolved, conductance is low resistance state, and the high spin state under high temperature, conductance is high-impedance state.
6. a kind of a kind of system of heat-sensitive sensor based on Spin crossover as described in claim 1 to 5 any one
Preparation Method, which comprises the following steps:
(1) the trifluoromethane sulfonic acid solution of the trifluoromethane sulfonic acid solution of trifluoromethane sulfonic acid ferrous iron, 1,2,4- triazoles is mixed,
Then the solution after reaction is placed until completing to crystallize；
(2) precipitating in solution is centrifuged, washed, dried, obtain [Fe (Htrz)3](CF3SO3)2Monocrystalline；
(3) by [Fe (Htrz)3](CF3SO3)2Monocrystalline is configured to the [Fe (Htrz) that mass concentration is 18-22 mg/ml3]
(CF3SO3)2Solution；
(4) by [Fe (Htrz) described in step (2)3](CF3SO3)2Film is made by vacuum evaporation in monocrystalline on conduction device,
Or by [Fe (Htrz) described in step (3)3](CF3SO3)2Film is made by solution spin-coating method in solution on conduction device, makes
Obtain [Fe (Htrz)3](CF3SO3)2Film is adhered on plastic flexible substrate or is erected between double layer of metal electrode layer.
7. preparation method according to claim 6, which is characterized in that the mass fraction of the trifluoromethane sulfonic acid ferrous iron is
1.8-2.2%。
8. preparation method according to claim 7, which is characterized in that the concentration of the trifluoromethane sulfonic acid solution is 0.4-
1.5mol/L。
9. preparation method according to claim 6, which is characterized in that the vapor deposition method particularly includes: 4 × 10-4 Pa
Vacuum atmosphere in carry out hot evaporation, evaporation rate is 0.1-0.5 nm/s.
10. preparation method according to claim 6, which is characterized in that solvent used in the spin-coating method is propionitrile.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1521071A2 (en) * | 2003-10-03 | 2005-04-06 | CRF Societa'Consortile per Azioni | Dynamometrical sensor device, manufacturing process and detection system therefrom |
| CN1747960A (en) * | 2002-12-12 | 2006-03-15 | 奥克森诺奥勒芬化学股份有限公司 | Method for the production of metal complexes |
| US20070035892A1 (en) * | 2003-10-03 | 2007-02-15 | Daniele Pullini | Magnetic transduction sensor device, manufacturing process and detection process therefrom |
| CN202582773U (en) * | 2012-08-17 | 2012-12-05 | 郑州方兴机械电子有限公司 | High sensitivity thin film miniature temperature sensor based on spin reorientation transition |
| CN104091628A (en) * | 2014-06-26 | 2014-10-08 | 中山大学 | Conductive spinning crossover compound material, preparing method of conductive spinning crossover compound material and application of conductive spinning crossover compound material |
| CN105482257A (en) * | 2016-01-04 | 2016-04-13 | 武汉工程大学 | Self-repairing high-strength anti-aging thin-film material and preparing method thereof |
| CN107507999A (en) * | 2016-06-14 | 2017-12-22 | 财团法人工业技术研究院 | Electrolyte composition and metal ion battery comprising same |
-
2019
- 2019-05-10 CN CN201910389588.7A patent/CN110095200B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1747960A (en) * | 2002-12-12 | 2006-03-15 | 奥克森诺奥勒芬化学股份有限公司 | Method for the production of metal complexes |
| EP1521071A2 (en) * | 2003-10-03 | 2005-04-06 | CRF Societa'Consortile per Azioni | Dynamometrical sensor device, manufacturing process and detection system therefrom |
| US20070035892A1 (en) * | 2003-10-03 | 2007-02-15 | Daniele Pullini | Magnetic transduction sensor device, manufacturing process and detection process therefrom |
| CN202582773U (en) * | 2012-08-17 | 2012-12-05 | 郑州方兴机械电子有限公司 | High sensitivity thin film miniature temperature sensor based on spin reorientation transition |
| CN104091628A (en) * | 2014-06-26 | 2014-10-08 | 中山大学 | Conductive spinning crossover compound material, preparing method of conductive spinning crossover compound material and application of conductive spinning crossover compound material |
| CN105482257A (en) * | 2016-01-04 | 2016-04-13 | 武汉工程大学 | Self-repairing high-strength anti-aging thin-film material and preparing method thereof |
| CN107507999A (en) * | 2016-06-14 | 2017-12-22 | 财团法人工业技术研究院 | Electrolyte composition and metal ion battery comprising same |
Non-Patent Citations (1)
| Title |
|---|
| HAONAN PENG: "Matrix-free synthesis of spin crossover micro-rods showing a large hysteresis loop centered at room temperature", 《CHEM. COMMUN》 * |
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