CN110095185A - A kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure and preparation method thereof - Google Patents
A kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure and preparation method thereof Download PDFInfo
- Publication number
- CN110095185A CN110095185A CN201910357202.4A CN201910357202A CN110095185A CN 110095185 A CN110095185 A CN 110095185A CN 201910357202 A CN201910357202 A CN 201910357202A CN 110095185 A CN110095185 A CN 110095185A
- Authority
- CN
- China
- Prior art keywords
- layer
- sub
- absorbing structure
- wavelength
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 51
- 239000002184 metal Substances 0.000 title claims abstract description 51
- 238000001514 detection method Methods 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000004020 conductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 40
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 238000001020 plasma etching Methods 0.000 claims description 23
- 229920001721 polyimide Polymers 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910015844 BCl3 Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000001413 cellular effect Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910021426 porous silicon Inorganic materials 0.000 claims description 2
- 238000011896 sensitive detection Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 15
- 238000003384 imaging method Methods 0.000 abstract description 10
- 230000010287 polarization Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 16
- 239000000523 sample Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000011161 development Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002493 microarray Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses the THz wave of a kind of integrated sub-wavelength metal ring absorbing structure detection micro-bridge structures and preparation method thereof, including microbridge, sub-wavelength absorbing structure layer is provided on the bridge floor of the microbridge, rosette and the concentric metal ring around rosette are etched on the sub-wavelength absorbing structure layer, the microbridge includes substrate, driving circuit on substrate is set, the circuit interface being arranged on driving circuit, sacrificial layer on driving circuit and substrate is set, the supporting layer with bridge floor and bridge leg being successively set on sacrificial layer from bottom to top, the contact conductor layer being connected with circuit interface, the dielectric layer of contact conductor interface can be exposed, the passivation layer of the vanadium oxide layer and covering vanadium oxide film that are connected with contact conductor interface, the sub-wavelength absorbing structure layer is set on the passivation layer, micro-bridge structure of the invention is able to achieve The detection and imaging of terahertz wave band have the advantages such as multifrequency absorption, absorptivity height, polarization insensitive.
Description
Technical field
The present invention relates to terahertz detections and technical field of imaging, and in particular to a kind of integrated sub-wavelength metal ring absorption knot
THz wave detection micro-bridge structure of structure and preparation method thereof.
Background technique
Terahertz (Terahertz, THz) wave refer to frequency between the electromagnetic radiation of (wavelength 3mm~30 μm) 0.1~10THz,
Its electromagnetic spectrum is between microwave and infrared band.Therefore, Terahertz system takes into account the advantage of electronics and optical system.It is long
Since phase, due to lacking effective terahertz emission generation and detection method, people are for the wave band properties of electromagnetic radiation
Solve it is very limited so that the wave band is referred to as the Terahertz gap in electromagnetic spectrum.The wave band is also to need in electromagnetic spectrum
The last one frequency window studied comprehensively.With the electromagnetic wave phase ratio of other wave bands, terahertz electromagnetic wave has following only
Special property: 1. transient state: the typical pulse-widths of terahertz pulse are in picosecond magnitude；2. broadband property: terahertz pulse source is usually only
Electromagnetic viscosimeter comprising several periods, the frequency band of single pulse can cover the range of GHz to tens THz；3. coherence: too
The coherent measurement technology of hertz time-domain spectroscopic technology can directly measure the amplitude and phase of Terahertz electric field, mention with can be convenient
Take refractive index, the absorption coefficient of sample；4. low energy: the energy of Terahertz photon only has milli electron-volt, will not be because of ionization
And tested substance is destroyed, so as to safely carry out the detection and diagnosis of biomedical aspect；5. penetrability: Terahertz spoke
Penetrating has very high through characteristic for packaging materials such as many nonpolar megohmite insulants, such as hardboard, plastics, textile fabric,
It can be used for detecting to concealing object.These features of THz wave make its image objects, environmental monitoring, medical diagnosis,
Radio astronomy, broadband mobile communication, especially satellite communication and in terms of with great scientific value and wide
Wealthy application prospect.It is the generation of terahertz pulse in recent years due to the development of free electron laser and ultrafast laser technique
Stable, reliable excitation light source is provided, the research of the mechanism of production, detection technique and application technology of terahertz emission is obtained
It flourishes.
Terahertz detector is the Primary Component of Terahertz Technology application.In the development and application of terahertz detector,
Detecting terahertz emission signal has very important meaning.Traditional un-cooled infrared focal plane array structure, theoretically may be used
With the detection and imaging for terahertz wave band.According to 1/4 wavelength theory, by taking radiation frequency 3THz as an example, to fully absorb too
The optical resonantor height of Hertzion radiation, un-cooled infrared focal plane array should be 25 μm (1/4 wavelength of incident radiation).But this
The resonant cavity height of sample is difficult to realize that (the resonant cavity height of traditional un-cooled infrared focal plane array is about in the preparation of device
1.5~3 μm).If not changing resonant cavity height, film structure is extremely low to the absorption of terahertz emission, so that signal detection
Difficulty is larger.In document (F.Simoens, etc, " Terahertz imaging with a quantum cascade laser
and amorphous-silicon microbolometer array”,Proceedings of SPIE,vol.7485,pp.
74850M-1-74850M-9,2009) in, the un-cooled infrared focal plane array based on amorphous silicon is used for terahertz imaging, is passed through
Simulation and experiment measurement are crossed, the terahertz emission absorptivity of probe unit is only 0.16~0.17%.Therefore, currently used solution
Certainly method is: keeping the resonant cavity height of un-cooled infrared focal plane array constant, increases by one layer of special terahertz emission and inhale
Layer is received on the top layer of film structure, to realize the detection and imaging of terahertz emission.Alan W.M.Lee etc. reports use
160 × 120 un-cooled infrared focal plane arrays carry out real-time, continuous THz wave imaging.Sensitive material is micro- positioned at silicon nitride
Vanadium oxide layer on bridge.They propose, to improve signal-to-noise ratio and spatial resolution, need to improve the design of focal plane arrays (FPA), wherein
Groundwork be optimization terahertz emission absorbing material (Alan W.M.Lee, etc, " Real-time, continuous-
wave terahertz imaging by use of a microbolometer focal-plane array”,Optics
Letters, vol.30,pp.2563–2565,2005)。
Terahertz emission can be absorbed in thin metal or metal composite thin film, while film thickness of the thickness lower than 50nm is to detection
The thermal capacitance of device influences very little and is commonly used for the absorption of Terahertz microarray detector conducive to the production of high speed of response probe unit
Layer.N.Oda etc. is carried out using 320 × 240 and 640 × 480 un-cooled infrared focal plane arrays based on vanadium oxide thermosensitive film
The detection of terahertz emission.Since absorptivity of original film structure to terahertz emission is only 2.6~4%.Therefore, Ta Men
The top layer of film structure increases by one layer of metallic film with appropriate square resistance and is used as terahertz emission absorbed layer, by incident spoke
Noise equivalent power when radio frequency rate is 3THz is down to 40pW (N.Oda, etc, " Detection of terahertz
radiation from quantum cascade laser using vanadium oxide microbolometer
focal plane arrays”,Proceedings of SPIE,vol.6940,pp.69402Y-1–69402Y-12,2008)。
Metallic film is used as terahertz emission absorbed layer in document (L.Marchese, etc, " A microbolometer-based
THz imager ", Proceedings of SPIE, vol.7671, pp. 76710Z-1-76710Z-8,2010) in also have report
Road, the thickness by optimizing metal absorption layer, which can absorb terahertz emission, to be maximized.It is public in patent 201310124924.8
A kind of infrared-terahertz dual-band array detector microbridge structure and production and preparation method thereof is opened, the top layer of micro-bridge structure is bilayer
Vanadium oxide layer, lower layer's vanadium oxide layer be the vanadium oxide layer without phase-change with high temperature coefficient of resistance (TCR), be used as it is infrared with too
The sensitive layer of hertz wave band, upper layer vanadium oxide layer have lower phase transition temperature, and semiconductor phase-metal phase can occur can anti-phase
Become, semiconductor Xiang Shiyu lower layer vanadium oxide layer is used as infrared absorption layer together, is used as terahertz emission after Xiang Bianwei metal phase and inhales
Receive layer.However the absorptivity of metallic film is limited, the terahertz emission absorptivity highest ideally without support metallic film
Only 50%, the absorptivity for being integrated into the metallic film in micro-bridge structure is lower, and preparing antenna absorbing structure can substantially mention
The absorption efficiency of high micro-bridge structure, theoretically absorptivity can achieve 100%.Meanwhile the micro-bridge structure in above method is adopted
Terahertz emission absorbed layer is used alone as with increased layer of material.
This research group discloses a kind of helical antenna coupling micro-bridge structure and its system in patent 201510409891.0
Preparation Method solves the problem of that the absorptivity of metallic film in the prior art is low and can only be used alone as terahertz emission absorbed layer.
The invention is used as light absorbing layer and contact conductor layer using helical antenna layer (metallic film) simultaneously, using positioned at helical antenna layer
For small size vanadium oxide layer at feed point as thermally sensitive layer, helical antenna layer has the spies such as high, the tunable, Polarization Detection of absorptivity
Point；Helical antenna layer is used as contact conductor simultaneously, can simplify technique, be advantageously integrated；Vanadium oxide layer thermosensitive film area is smaller, tool
There is higher detectivity；By adjusting antenna structure parameter, it can be achieved that infrared detect and be imaged with terahertz wave band.But it should
It in method, because helical antenna layer is used as contact conductor simultaneously, is limited by contact conductor structure, width etc., antenna system and knot
Structure Parameter adjustable is poor.
This research group disclosed in patent 201610314140.5 a kind of bridge leg separate antenna coupling micro-bridge structure and
Preparation method, the bridge leg separate antenna layer prepare the top layer in micro-bridge structure probe unit.The present invention includes substrate, and setting exists
Driving circuit on substrate, the circuit interface being arranged on driving circuit, is arranged in the sacrificial layer on driving circuit and substrate, under
The supporting layer with bridge floor and bridge leg that is successively set on and on sacrificial layer, the contact conductor layer being connected with circuit interface,
The passivation layer that contact conductor interface can be exposed, the vanadium oxide thermally sensitive layer being connected with contact conductor interface, feed point are located at oxidation
Antenna stack at vanadium.Antenna stack is made of bridge floor antenna and bridge leg antenna, and structure, parameter can within the scope of passivation layer for bridge floor antenna
It adjusts, bridge leg antenna pattern is consistent with bridge leg, adjustable in bridge leg range insied width.The bridge leg separate antenna coupling micro-bridge structure tool
Have the features such as antenna Independent adjustable, multifrequency absorb, absorptivity is high, Polarization Detection, for it is infrared with terahertz wave band detection at
Picture.But in this method, limited by bridge leg width, bridge leg tested rotating platform is limited in scope, and the structure has polarization selectivity.
Summary of the invention
It is an object of the invention to: the THz wave for providing a kind of integrated sub-wavelength metal ring absorbing structure detects microbridge knot
Structure and preparation method thereof, the micro-bridge structure are able to achieve the detection and imaging of terahertz wave band, there is multifrequency to absorb, absorptivity is high,
The advantages such as polarization insensitive.
The technical solution adopted by the invention is as follows:
To achieve the above object, the THz wave that the present invention provides a kind of integrated sub-wavelength metal ring absorbing structure detects micro-
Bridge structure, including microbridge, are provided with sub-wavelength absorbing structure layer on the bridge floor of the microbridge, on the sub-wavelength absorbing structure layer
It is etched with rosette and the concentric metal ring around rosette.
Preferably, the microbridge includes that substrate, setting driving circuit on substrate, the circuit being arranged on driving circuit connect
Mouthful, the sacrificial layer that is arranged on driving circuit and substrate, be successively set on from bottom to top on sacrificial layer with bridge floor and bridge leg
Supporting layer, be connected with circuit interface contact conductor layer, contact conductor interface can be exposed dielectric layer, connect with contact conductor
The passivation layer of vanadium oxide layer and covering vanadium oxide film that mouth is connected, the sub-wavelength absorbing structure layer are set on the passivation layer.
Preferably, the sub-wavelength absorbing structure layer is aluminium, tungsten, titanium, platinum, nickel, chromium or they any alloy,
With a thickness of 50~500nm.
Preferably, the rosette is located at the bridge floor center of microbridge, and diameter is 5 μm~160 μm.
Preferably, the number of the becket is 1~10, and the outer diameter of the becket is 10 μm~180 μm, and width is
1 μm~30 μm, spacing is 1 μm~100 μm.
Preferably, cellular construction of the micro-bridge structure as Terahertz micro-metering bolometer detection array, area are
(20 20 μm of μ m)~(200 200 μm of μ m).
Preferably, the material of the sacrificial layer be polyimides, silica, oxidation porous silicon and phosphorosilicate glass in
It is any；The supporting layer is made of single thin film or plural layers, and material is silica or silicon nitride, the thickness of supporting layer
Degree is 0.1~1 μm；The contact conductor layer is aluminium, tungsten, titanium, platinum, nickel, chromium or they any alloy, with a thickness of 10
The material of~200nm, the dielectric layer are silica or silicon nitride, with a thickness of 50~300nm；The electricity of the vanadium oxide layer
Resistance temperature coefficient is -2%/K~-6%/K, with a thickness of 30~300nm；The material of the passivation layer is silicon nitride, with a thickness of 50
~300nm.
The present invention also provides the systems of the THz wave of above-mentioned integrated sub-wavelength metal ring absorbing structure detection micro-bridge structure
Preparation Method, including following preparation step:
(1) driving circuit is integrated on substrate, then prepares sacrificial layer and graphical on the substrate with driving circuit,
Expose the circuit interface of driving circuit；
(2) supporting layer, graphical supporting layer, and supporting layer part are prepared on sacrificial layer covers circuit interface；
(3) contact conductor layer is prepared on supporting layer, and contact conductor layer is made to be connected with the circuit interface of driving circuit,
Patterned electrodes trace layer obtains the contact conductor layer of belt electrode pin interfaces；
(4) the preparation media layer on contact conductor layer exposes contact conductor interface after patterned media layer；
(5) vanadium oxide layer is prepared on dielectric layer, and patterned oxide vanadium layers make it cover contact conductor interface and therewith
It is connected；
(6) passivation layer is prepared on vanadium oxide layer, and graphical passivation layer makes it cover vanadium oxide layer；
(7) sub-wavelength absorbing structure layer is prepared on the passivation layer, and graphical sub-wavelength absorbing structure layer is rosette
With metal ring structure；
(8) releasing sacrificial layer, the THz wave for forming integrated sub-wavelength metal ring absorbing structure detect micro-bridge structure, then
It is packaged to form sensitive detection parts.
Preferably, the step (2), (4), the graphical supporting layer in (6), dielectric layer, passivation layer are using photoetching and instead
Ion etch process is answered to complete, the reactive ion etching gas is fluorine base gas and O2Mixed gas, the fluorine-based gas
Body and O2Flow-rate ratio be (10:20)~(90:10), radio-frequency power be 100~500W, chamber pressure be 2~10Pa.
Preferably, the step (3), (5), the patterned electrodes trace layer in (7), vanadium oxide layer, sub-wavelength absorb knot
Structure layer is completed using photoetching and reactive ion etching process, and the reactive ion etching gas is BCl3、Cl2And neutral gas
Mixed gas, the neutral gas be N2、CH4Any one of or both mixing, the BCl3And Cl2Flow-rate ratio be
(10:30)~(90:10), the flow of the neutral gas are 0~90sccm, and radio-frequency power is 100~500W, chamber pressure
For 2~10Pa.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1. the present invention is etched on sub-wavelength absorbing structure layer by the way that sub-wavelength absorbing structure to be integrated into micro-bridge structure
Rosette and concentric metal ring around rosette, can adjust the size of rosette, becket according to actual needs
Number and size adjust number, position and the size of resonance absorbing peak so that the micro-bridge structure there is multifrequency to absorb,
Absorptivity height, the adjustable feature of absorption characteristic.
2. rosette and the concentric metal ring around rosette are etched on sub-wavelength absorbing structure layer of the present invention, because
The symmetry of rosette and metal ring structure, so that micro-bridge structure of the invention has the advantages that polarization insensitive, to TE wave
There is higher absorptivity with TM wave.
3. sub-wavelength absorbing structure layer of the present invention can be prepared by etching annulus pattern in metallic film, work is prepared
Skill is simple, compatible with the preparation process of micro-bridge structure, is conducive to the integrated preparation of THz wave detection microbridge array.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is cross-sectional view of the structure of the invention, wherein a is the substrate sectional view with driving circuit, and b is sacrificial to prepare
The substrate sectional view of domestic animal layer, c is the substrate sectional view for preparing supporting layer, and d is the substrate sectional view for preparing contact conductor layer,
E is the substrate sectional view for preparing dielectric layer, and f is the substrate sectional view for preparing vanadium oxide layer, and g is the lining for preparing passivation layer
Bottom profile figure, h are the substrate sectional view for preparing sub-wavelength metal ring absorbing structure, and i is the device junction after dischargeing sacrificial layer
Structure sectional view；
Fig. 2 is structure top view of the invention, wherein a is the substrate top view for being prepared with sacrificial layer, supporting layer, and b is
The substrate top view of contact conductor layer is prepared, c is the substrate top view for preparing dielectric layer, and d is to prepare vanadium oxide layer
Substrate top view, e are the substrate top view for preparing passivation layer, and f is the microbridge knot for preparing sub-wavelength metal ring absorbing structure
Structure top view；
Fig. 3 is terahertz emission absorption curve figure of the invention in embodiment 1；
Fig. 4 is terahertz emission absorption curve figure of the invention in embodiment 2.
In the figure, it is marked as 10- substrate, 20- driving circuit, 21- circuit interface, 30- sacrificial layer, 40- supporting layer, 41- bridge
Face, 42- bridge leg, 50- contact conductor layer, 51- contact conductor interface, 60- dielectric layer, 70- vanadium oxide layer, 80- passivation layer, 90-
Sub-wavelength metal ring absorbing structure layer, 91- rosette, 92- becket, 100- microbridge.
Specific embodiment
The following is a clear and complete description of the technical scheme in the embodiments of the invention, it is clear that described embodiment
Only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
Art personnel every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
Embodiment 1
A kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure, including microbridge 100, it is described micro-
It is provided with sub-wavelength absorbing structure layer 90 on the bridge floor of bridge 100, is etched with rosette on the sub-wavelength absorbing structure layer 90
91 and around rosette 91 concentric metal ring 92.
The microbridge 100 includes substrate 10, the driving circuit 20 being arranged on substrate 10, the electricity being arranged on driving circuit 20
Road interface 21, is successively set on sacrificial layer 30 sacrificial layer 30 being arranged on driving circuit 20 and substrate 10 from bottom to top
Supporting layer 40 with bridge floor 41 and bridge leg 42, can expose contact conductor at the contact conductor layer 50 being connected with circuit interface 21
The dielectric layer 60 of interface 51, the vanadium oxide layer 70 being connected with contact conductor interface 51 and the passivation layer for covering vanadium oxide film
80, the sub-wavelength absorbing structure layer 90 is located on passivation layer 80.
Probe unit of the micro-bridge structure as Terahertz microarray detector, the micro-bridge structure elemental area of detector array
Product is 35 μm of 35 μ m.
A kind of preparation method of the THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure, including it is following
Preparation step:
(1) driving circuit 20 is prepared on substrate 10 first, circuit interface 21 is prepared on driving circuit 20, as shown in figure 1
Shown in a；
(2) cleaning has 10 surface of substrate of driving circuit 20, removes surface contamination, and by the substrate with driving circuit 20
10 toast at 200 DEG C, to remove the steam on surface, enhance adhesive property, carry out light-sensitive polyimide with automatic glue application track
Coating, that is, prepare sacrificial layer 30, by control revolving speed be 3000rpm when gluing, 120 are carried out to the light-sensitive polyimide of coating
Baking at DEG C is sub- to photosensitive polyamides using NIKON litho machine conducive to the neat of exposure lines to remove the solvent in the glue of part
Amine is exposed process, and the substrate 10 (having prepared light-sensitive polyimide) with driving circuit 20 through overexposure is sent to automatic development
Track carries out the development of glue, and developer solution is the developer for positive photoresist TMAH of standard, and the light-sensitive polyimide after development shows down ladder
Shape pattern as shown in fig. ib then places the substrate 10 with driving circuit 20 for being prepared with photosensitive polyimide film
Imidization processing is carried out in the annealing oven of blanketing with inert gas, imidization temperature setting is stage rising, maximum temperature
It is 350 DEG C, constant temperature time 90min, for the light-sensitive polyimide after imidization with a thickness of 2 μm, 30 part of sacrificial layer covers substrate
10；
(3) using PECVD device and the silicon nitride of mixing sputtering technology production low stress, i.e. supporting layer 40, preparation support
Then the thickness range of layer 40 carries out lithography and etching to supporting layer 40, etches the figure of supporting layer 40 at 0.4 μm, support
40 part of layer cover circuit interface pattern, shown in c as shown in figure 1；
(4) one layer of metal aluminium film is prepared using sputtering equipment then to use as contact conductor layer 50 with a thickness of 50nm
Photoetching completes the graphical of contact conductor layer 50 with reactive ion etching process, and reactive ion etching gas is BCl3、Cl2And N2,
BCl is set3、Cl2And N2Flow-rate ratio be 20sccm:20sccm:5sccm, radio-frequency power 300W, chamber pressure 4Pa,
Electrode width is 1 μm, shown in d as shown in figure 1 after graphical；
(5) using PECVD device and the silicon nitride of mixing sputtering technology production low stress, i.e. dielectric layer 60, preparation media
Layer 60 with a thickness of 50nm, the graphical of 60 dielectric film of passivation layer is completed using photoetching and reactive ion etching process, is etched
Gas is CHF3With O2Mixed gas, be arranged CHF3With O2Flow-rate ratio be 20sccm:3sccm, radio-frequency power 400W, instead
Answering chamber pressure is 4Pa；Rectangular through-hole pattern is formed after etch media layer 60 on supporting layer and exposes contact conductor interface 51, is such as schemed
Shown in e in 1；
(6) vanadium oxide layer 70 is prepared using magnetron sputtering apparatus, control sputtering power is 300W when sputtering, and partial pressure of oxygen is
3%, sputtering time 10min, annealing temperature are 300 DEG C；The graphical of vanadium oxide layer 70 uses photoetching and reactive ion etching
Technique is completed, and reactive ion etching gas is BCl3、Cl2And N2, BCl is set3、Cl2And N2Flow-rate ratio be 40sccm:
20sccm:5sccm, radio-frequency power 300W, chamber pressure 4Pa；Patterned oxide vanadium layers 70 are rectangular patterns, covering
Contact conductor interface 51, shown in f as shown in figure 1；
(7) using PECVD device and the silicon nitride of mixing sputtering technology production low stress, i.e. passivation layer 80, preparation passivation
Layer 80 with a thickness of 50nm, the graphical of 80 dielectric film of passivation layer is completed using photoetching and reactive ion etching process, is etched
Gas is CHF3With O2Mixed gas, be arranged CHF3With O2Flow-rate ratio be 20sccm:3sccm, radio-frequency power 400W, instead
Answering chamber pressure is 40Pa；Etch Passivation formation rectangular patterns after 80s make it cover vanadium oxide layer 70, as shown in the g in Fig. 1；
(8) one layer of metal aluminium film is prepared using sputtering equipment and is used as sub-wavelength absorbing structure layer 90, with a thickness of 100nm,
Then graphical, the reactive ion etching gas of sub-wavelength absorbing structure layer 90 is completed with reactive ion etching process using photoetching
For BCl3、Cl2And N2, BCl is set3、Cl2And N2Flow-rate ratio be 20sccm:20sccm:5sccm, radio-frequency power 250W, instead
Answering chamber pressure is 4Pa；Graphical sub-wavelength absorbing structure layer is rosette 91 and becket 92, shown in h as shown in figure 1.Gold
Belonging to disk diameter is 16 μm, and becket number is 2,26 μm of inner metal ring outer diameter, and outside becket outer diameter is 33 μm, interior
Side metal ring width is 4 μm, and outside metal ring width is 2.5 μm；
(9) micro-bridge structure that sub-wavelength absorbing structure layer 90 is finished with oxygen gas plasma bombardment, by imidization
Light-sensitive polyimide (sacrificial layer) removal, forms the probe unit with supporting layer structure, the diagrammatic cross-section of the probe unit
Shown in i as shown in figure 1.
The terahertz emission absorption curve of the micro-bridge structure emulated using CST software is as shown in Figure 3.It can see
Out, it is inhaled using the THz wave detection micro-bridge structure of the integrated sub-wavelength metal ring absorbing structure of aforementioned parameters design with multifrequency
The characteristics of receipts, has absorption peak at the frequencies such as 2.3THz, 3.4THz, and absorptivity reaches 98%, 3.35THz at 2.25THz
Place's absorptivity reaches 76%, can be used for the detection of multiband THz wave and imaging.
Embodiment 2
A kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure, including microbridge 100, it is described micro-
It is provided with sub-wavelength absorbing structure layer 90 on the bridge floor of bridge 100, is etched with rosette on the sub-wavelength absorbing structure layer 90
91 and around rosette 91 concentric metal ring 92.
The microbridge 100 includes substrate 10, the driving circuit 20 being arranged on substrate 10, the electricity being arranged on driving circuit 20
Road interface 21, is successively set on sacrificial layer 30 sacrificial layer 30 being arranged on driving circuit 20 and substrate 10 from bottom to top
Supporting layer 40 with bridge floor 41 and bridge leg 42, can expose contact conductor at the contact conductor layer 50 being connected with circuit interface 21
The dielectric layer 60 of interface 51, the vanadium oxide layer 70 being connected with contact conductor interface 51 and the passivation layer for covering vanadium oxide film
80, the sub-wavelength absorbing structure layer 90 is located on passivation layer 80.
Probe unit of the micro-bridge structure as Terahertz microarray detector.The micro-bridge structure elemental area of detector array
Product is 50 μm of 50 μ m.
A kind of preparation method of the THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure, including it is following
Preparation step:
(1) driving circuit 20 is prepared on substrate 10 first, circuit interface 21 is prepared on driving circuit 20, as shown in figure 1
Shown in a；
(2) cleaning has 10 surface of substrate of driving circuit 20, removes surface contamination, and by the substrate with driving circuit 20
10 toast at 200 DEG C, to remove the steam on surface, enhance adhesive property, carry out light-sensitive polyimide with automatic glue application track
Coating, that is, prepare sacrificial layer 30, by control revolving speed be 3000rpm when gluing, the light-sensitive polyimide of coating is carried out
Baking at 120 DEG C is to remove the solvent in the glue of part, conducive to the neat of exposure lines, using NIKON litho machine to photosensitive poly-
Acid imide is exposed process, and the substrate 10 (having prepared light-sensitive polyimide) with driving circuit 20 through overexposure is sent to automatically
The track that develops carries out the development of glue, and developer solution is the developer for positive photoresist TMAH of standard, and the light-sensitive polyimide after development shows
Inverted trapezoidal pattern will then be prepared with the substrate 10 with driving circuit 20 of photosensitive polyimide film as shown in fig. ib
It is placed on progress imidization processing in the annealing oven of blanketing with inert gas, imidization temperature setting is stage rising, highest
Temperature is 350 DEG C, constant temperature time 90min, and with a thickness of 2 μm, 30 part of sacrificial layer covers the light-sensitive polyimide after imidization
Substrate 10；
(3) using PECVD device and the silicon nitride of mixing sputtering technology production low stress, i.e. supporting layer 40, preparation support
Layer 40 with a thickness of 0.4 μm, then to supporting layer 40 carry out lithography and etching, etch the figure of supporting layer 40, supporting layer 40
Part covering circuit interface pattern, shown in c as shown in figure 1；
(4) one layer of metal aluminium film is prepared using sputtering equipment then to use as contact conductor layer 50 with a thickness of 50nm
Photoetching completes the graphical of contact conductor layer 50 with reactive ion etching process, and reactive ion etching gas is BCl3、Cl2And N2,
BCl is set3、Cl2And N2Flow-rate ratio be 20sccm:20sccm:5sccm, radio-frequency power 300W, chamber pressure 4Pa,
Electrode width is 1 μm, shown in d as shown in figure 1 after graphical；
(5) using PECVD device and the silicon nitride of mixing sputtering technology production low stress, i.e. dielectric layer 60, preparation media
Layer 60 with a thickness of 50nm, the graphical of 60 dielectric film of passivation layer is completed using photoetching and reactive ion etching process, is etched
Gas is CHF3With O2Mixed gas, be arranged CHF3With O2Flow-rate ratio be 20sccm:3sccm, radio-frequency power 400W, instead
Answering chamber pressure is 4Pa；Rectangular through-hole pattern is formed after etch media layer 60 on supporting layer and exposes contact conductor interface 51, is such as schemed
Shown in e in 1；
(6) vanadium oxide layer 70 is prepared using magnetron sputtering apparatus, control sputtering power is 300W when sputtering, and partial pressure of oxygen is
3%, sputtering time 10min, annealing temperature are 300 DEG C；The graphical of vanadium oxide layer 70 uses photoetching and reactive ion etching
Technique is completed, and reactive ion etching gas is BCl3、Cl2And N2, BCl is set3、Cl2And N2Flow-rate ratio be 40sccm:
20sccm:5sccm, radio-frequency power 300W, chamber pressure 4Pa；Patterned oxide vanadium layers 70 are rectangular patterns, covering
Contact conductor interface 51, shown in f as shown in figure 1；
(7) using PECVD device and the silicon nitride of mixing sputtering technology production low stress, i.e. passivation layer 80, preparation passivation
Layer 80 with a thickness of 50nm, the graphical of 80 dielectric film of passivation layer is completed using photoetching and reactive ion etching process, is etched
Gas is CHF3With O2Mixed gas, be arranged CHF3With O2Flow-rate ratio be 20sccm:3sccm, radio-frequency power 400W, instead
Answering chamber pressure is 40Pa；Etch Passivation formation rectangular patterns after 80s make it cover vanadium oxide layer 70, shown in g as shown in figure 1；
(8) one layer of metal aluminium film is prepared using sputtering equipment and is used as sub-wavelength absorbing structure layer 90, with a thickness of 100nm,
Then graphical, the reactive ion etching gas of sub-wavelength absorbing structure layer 90 is completed with reactive ion etching process using photoetching
For BCl3、Cl2And N2, BCl is set3、Cl2And N2Flow-rate ratio be 20sccm:20sccm:5sccm, radio-frequency power 250W, instead
Answering chamber pressure is 4Pa；Graphical sub-wavelength absorbing structure layer is rosette 91 and becket 92, shown in h as shown in figure 1.Gold
Belonging to disk diameter is 16 μm, and becket number is 2, and inner metal ring outer diameter is 30 μm, and outside becket outer diameter is 44 μm, interior
Side metal ring width is 6 μm, and outside metal ring width is 6 μm；
(9) micro-bridge structure that sub-wavelength absorbing structure layer 90 is finished with oxygen gas plasma bombardment, by imidization
Light-sensitive polyimide (sacrificial layer) removal, forms the probe unit with supporting layer structure, the diagrammatic cross-section of the probe unit
Shown in i as shown in figure 1.
The terahertz emission absorption curve of the micro-bridge structure emulated using CST software is as shown in Figure 4.It can see
Out, equally had using the THz wave detection micro-bridge structure of the integrated sub-wavelength metal ring absorbing structure of aforementioned parameters design more
Frequency absorb the characteristics of, at the frequencies such as 2.1THz, 3.2THz have absorption peak, can be used for multiband THz wave detection at
Picture.
Claims (10)
1. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure detects micro-bridge structure, including microbridge (100), feature
It is, sub-wavelength absorbing structure layer (90), the sub-wavelength absorbing structure layer (90) is provided on the bridge floor of the microbridge (100)
On be etched with rosette (91) and surround rosette (91) concentric metal ring (92).
2. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 1 detects micro-bridge structure,
It is characterized in that, the microbridge (100) includes driving circuit (20), the driving circuit of substrate (10), setting on substrate (10)
(20) circuit interface (21) that is arranged on, the sacrificial layer (30) being arranged on driving circuit (20) and substrate (10), from bottom to top
The supporting layer (40) with bridge floor (41) and bridge leg (42) that is successively set on sacrificial layer (30) is connected with circuit interface (21)
The contact conductor layer (50) that connects, the dielectric layer (60) that can expose contact conductor interface (51) are connected with contact conductor interface (51)
The passivation layer (80) of the vanadium oxide layer (70) and covering vanadium oxide film that connect, the sub-wavelength absorbing structure layer (90) are located at passivation
On layer (80).
3. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 1 detects micro-bridge structure,
It is characterized in that, the sub-wavelength absorbing structure layer (90) is aluminium, tungsten, titanium, platinum, nickel, chromium or they any alloy,
With a thickness of 50~500nm.
4. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 1 detects micro-bridge structure,
It is characterized in that, the rosette (91) is located at the bridge floor center of microbridge (100), and diameter is 5 μm~160 μm.
5. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 1 detects micro-bridge structure,
It is characterized in that, the number of the becket (92) is 1~10, the outer diameter of the becket (92) is 10 μm~180 μm, wide
Degree is 1 μm~30 μm, and spacing is 1 μm~100 μm.
6. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 1 detects micro-bridge structure,
It is characterized in that, cellular construction of the micro-bridge structure as Terahertz micro-metering bolometer detection array, area is (20 μ ms
20 μm)~(200 200 μm of μ m).
7. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 1 detects micro-bridge structure,
It is characterized in that, the material of the sacrificial layer (30) be polyimides, silica, oxidation porous silicon and phosphorosilicate glass in
It is any；The supporting layer (40) is made of single thin film or plural layers, and material is silica or silicon nitride, supporting layer
(40) with a thickness of 0.1~1 μm；The contact conductor layer (50) be aluminium, tungsten, titanium, platinum, nickel, chromium or it is any they
Alloy, with a thickness of 10~200nm；The material of the dielectric layer (60) is silica or silicon nitride, with a thickness of 50~
300nm；The temperature-coefficient of electrical resistance of the vanadium oxide layer (70) is -2%/K~-6%/K, with a thickness of 30~300nm；The passivation
The material of layer (80) is silicon nitride, with a thickness of 50~300nm.
8. the THz wave detection of described in any item a kind of integrated sub-wavelength metal ring absorbing structures according to claim 1~7
The preparation method of micro-bridge structure, which is characterized in that including following preparation step:
(1) driving circuit is integrated on substrate, then prepares sacrificial layer and graphical, exposing on the substrate with driving circuit
The circuit interface of driving circuit；
(2) supporting layer, graphical supporting layer, and supporting layer part are prepared on sacrificial layer covers circuit interface；
(3) contact conductor layer is prepared on supporting layer, and contact conductor layer is made to be connected with the circuit interface of driving circuit, figure
Polarizing electrode trace layer obtains the contact conductor layer of belt electrode pin interfaces；
(4) the preparation media layer on contact conductor layer exposes contact conductor interface after patterned media layer；
(5) vanadium oxide layer is prepared on dielectric layer, and patterned oxide vanadium layers make it cover contact conductor interface and are attached thereto
It connects；
(6) passivation layer is prepared on vanadium oxide layer, and graphical passivation layer makes it cover vanadium oxide layer；
(7) sub-wavelength absorbing structure layer is prepared on the passivation layer, and graphical sub-wavelength absorbing structure layer is rosette and gold
Belong to ring structure；
(8) releasing sacrificial layer, the THz wave for forming integrated sub-wavelength metal ring absorbing structure detect micro-bridge structure, then carry out
Encapsulation forms sensitive detection parts.
9. a kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure according to claim 8
Preparation method, which is characterized in that the step (2), (4), the graphical supporting layer in (6), dielectric layer, passivation layer use photoetching
It is completed with reactive ion etching process, the reactive ion etching gas is fluorine base gas and O2Mixed gas, the fluorine
Base gas and O2Flow-rate ratio be (10:20)~(90:10), radio-frequency power be 100~500W, chamber pressure be 2~10Pa.
10. a kind of THz wave of integrated sub-wavelength metal ring absorbing structure according to claim 8 detects micro-bridge structure
Preparation method, which is characterized in that the step (3), (5), the patterned electrodes trace layer in (7), vanadium oxide layer, sub-wavelength
Absorbing structure layer is completed using photoetching and reactive ion etching process, and the reactive ion etching gas is BCl3、Cl2With in
Property gas mixed gas, the neutral gas be N2、CH4Any one of or both mixing, the BCl3And Cl2Stream
Amount is than being (10:30)~(90:10), and the flow of the neutral gas is 0~90sccm, and radio-frequency power is 100~500W, reaction
Chamber pressure is 2~10Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910357202.4A CN110095185B (en) | 2019-04-29 | 2019-04-29 | Terahertz wave detection microbridge structure integrated with sub-wavelength metal ring absorption structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910357202.4A CN110095185B (en) | 2019-04-29 | 2019-04-29 | Terahertz wave detection microbridge structure integrated with sub-wavelength metal ring absorption structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110095185A true CN110095185A (en) | 2019-08-06 |
| CN110095185B CN110095185B (en) | 2020-11-20 |
Family
ID=67446546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910357202.4A Expired - Fee Related CN110095185B (en) | 2019-04-29 | 2019-04-29 | Terahertz wave detection microbridge structure integrated with sub-wavelength metal ring absorption structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110095185B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111207842A (en) * | 2020-01-14 | 2020-05-29 | 电子科技大学 | Absorption structure for terahertz micro-bolometer and preparation method thereof |
| CN114001832A (en) * | 2021-10-29 | 2022-02-01 | 烟台睿创微纳技术股份有限公司 | Non-refrigeration infrared polarization detection pixel structure, chip and detector |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237432A (en) * | 2010-05-07 | 2011-11-09 | 同济大学 | Terahertz and infrared frequency band sensitive photon detector |
| CN104505561A (en) * | 2014-12-17 | 2015-04-08 | 国家纳米科学中心 | Multiband terahertz filter and manufacture method of multiband terahertz filter |
| CN105811061A (en) * | 2016-05-13 | 2016-07-27 | 电子科技大学 | Bridge leg separated antenna coupling micro-bridge structure and fabrication method thereof |
| CN108365345A (en) * | 2018-02-06 | 2018-08-03 | 电子科技大学 | A kind of antenna structure and preparation method thereof for Terahertz micro-metering bolometer |
| CN108666763A (en) * | 2018-04-15 | 2018-10-16 | 哈尔滨理工大学 | A kind of broadband Terahertz absorber based on high doping semiconductor |
-
2019
- 2019-04-29 CN CN201910357202.4A patent/CN110095185B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237432A (en) * | 2010-05-07 | 2011-11-09 | 同济大学 | Terahertz and infrared frequency band sensitive photon detector |
| CN104505561A (en) * | 2014-12-17 | 2015-04-08 | 国家纳米科学中心 | Multiband terahertz filter and manufacture method of multiband terahertz filter |
| CN105811061A (en) * | 2016-05-13 | 2016-07-27 | 电子科技大学 | Bridge leg separated antenna coupling micro-bridge structure and fabrication method thereof |
| CN108365345A (en) * | 2018-02-06 | 2018-08-03 | 电子科技大学 | A kind of antenna structure and preparation method thereof for Terahertz micro-metering bolometer |
| CN108666763A (en) * | 2018-04-15 | 2018-10-16 | 哈尔滨理工大学 | A kind of broadband Terahertz absorber based on high doping semiconductor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111207842A (en) * | 2020-01-14 | 2020-05-29 | 电子科技大学 | Absorption structure for terahertz micro-bolometer and preparation method thereof |
| CN114001832A (en) * | 2021-10-29 | 2022-02-01 | 烟台睿创微纳技术股份有限公司 | Non-refrigeration infrared polarization detection pixel structure, chip and detector |
| WO2023070749A1 (en) * | 2021-10-29 | 2023-05-04 | 烟台睿创微纳技术股份有限公司 | Uncooled infrared polarization detection pixel structure, chip, and detector |
| CN114001832B (en) * | 2021-10-29 | 2024-02-27 | 烟台睿创微纳技术股份有限公司 | Uncooled infrared polarization detection pixel structure, chip and detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110095185B (en) | 2020-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103193190B (en) | Infrared-terahertz dual-band array detector microbridge structure and preparation method thereof | |
| CN104953223B (en) | A kind of helical antenna coupling micro-bridge structure and preparation method thereof | |
| CN106352989B (en) | A kind of production method and structure of non-refrigerated infrared focal plane probe microbridge | |
| CN102529211B (en) | Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof | |
| US7329871B2 (en) | Plasmonic enhanced infrared detector element | |
| US8450690B2 (en) | Thermal imager using metamaterials | |
| CN106517077B (en) | Infrared detector and manufacturing method thereof | |
| CN106115604B (en) | Terahertz micro-metering bolometer based on metamaterial structure and preparation method thereof | |
| EP2208975B1 (en) | Fabrication method of a bolometric detector | |
| CN105811061B (en) | A kind of bridge leg separate antenna coupling micro-bridge structure and preparation method thereof | |
| CN108358157A (en) | A kind of Meta Materials micro-bridge structure and preparation method thereof | |
| WO2012071820A1 (en) | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane | |
| CN105129717B (en) | A kind of micro-bridge structure of broadband high-selenium corn THz wave and preparation method thereof | |
| CN104075811B (en) | TCR high absorbs the THz detecting structures and preparation method of sensitive laminated film | |
| CN110095185A (en) | A kind of THz wave detection micro-bridge structure of integrated sub-wavelength metal ring absorbing structure and preparation method thereof | |
| JP2008241439A (en) | Bolometer type thz wave detector | |
| CN110118604B (en) | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof | |
| CN104078526B (en) | The THz wave room temperature probe unit of integrated infrared shielding structure and preparation method | |
| CN110398793A (en) | A kind of light adjustable double band Terahertz absorber and production method based on all dielectric | |
| CN110617882B (en) | Temperature-sensing terahertz detector based on phase-change material and preparation method | |
| CN105048103A (en) | Preparing method for ultrathin metallic film for absorbing terahertz waves | |
| CN108365345A (en) | A kind of antenna structure and preparation method thereof for Terahertz micro-metering bolometer | |
| Kang et al. | Chip-scale mems-cmos multispectral infrared chemical sensor | |
| CN105923600B (en) | A kind of adjustable Terahertz near field excitated type molecule sensor of amplitude and its manufacture method | |
| JPH05264343A (en) | Far-infrared spectral light detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201120 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |