CN110093667A - A kind of device and method of vapor phase growth ZnTe monocrystal - Google Patents
A kind of device and method of vapor phase growth ZnTe monocrystal Download PDFInfo
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- CN110093667A CN110093667A CN201910425527.1A CN201910425527A CN110093667A CN 110093667 A CN110093667 A CN 110093667A CN 201910425527 A CN201910425527 A CN 201910425527A CN 110093667 A CN110093667 A CN 110093667A
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- boat
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of device and method of vapor phase growth ZnTe monocrystal, which includes: heating furnace, and prolonging axial successively includes flat-temperature zone and linear cooling area, and the heating furnace has the furnace chamber for penetrating through described two warm areas；Quartz ampoule, is placed in the furnace chamber of the heating furnace and the two can be moved along furnace chamber is axially opposing；Combine quartz boat, You Zhuzhou, material boat and long brilliant casing composition.The device has the first working condition and the second working condition, and in first working condition, the main boat is separated with long brilliant casing, takes out quartzy intraductal atmospheric pressure to 10‑5Then Pa pours argon gas.In second working condition, main boat is connect with long brilliant casing by quartzy frosted, confined space is formed in main boat, heating expects boat to target temperature, the constant speed that control heating furnace is matched with one with crystal growth rate is moved axially along furnace chamber, to make the solid gas interface of ZnTe crystal during long brilliant remain constant growth thermal field environment, that realizes ZnTe monocrystalline stablizes growth.
Description
Technical field
The invention belongs to monocrystal material preparation fields, and in particular to a kind of device of vapor phase growth ZnTe monocrystal and side
Method.
Background technique
ZnTe crystal is a kind of II-VI group compound semiconductor materials, and crystal has face-centred cubic structure, forbidden bandwidth
2.26ev, and can properly increase and change with heavy doping, it is a kind of very excellent production solar battery and high-brightness LED
Luminescent material.Particularly, since ZnTe crystal has fairly obvious nonlinear optical property and excellent light transmission features, working as
Modern Terahertz Technology be highly valued with development and application period, ZnTe crystal emits as a kind of THz wave and receiving device
Material receives extremely wide concern.ZnTe crystalline material fusing point is up to 1300 DEG C, this prepares the growth of such material
Become very difficult.In addition, since crystal vapour pressure and impurity and powder injection molding difficulty increase, evaporation silica crucible is easy change
The growth of the factors such as shape, ZnTe body crystalline substance becomes very difficult.Relative to melt growth, physical carbon burdening (PVT) be can yet be regarded as
An effective technology of growth ZnTe monocrystal at present, the technology have low long brilliant temperature, crystal perfection, performance good etc.
Advantage.
Summary of the invention
The object of the present invention is to provide a kind of device and methods of vapor phase growth ZnTe monocrystal, can make ZnTe crystal
The growing environment that keeps constant of solid gas interface, that realizes ZnTe monocrystalline stablizes growth.
The technical solution adopted by the invention is as follows:
A kind of device of vapor phase growth ZnTe monocrystal, comprising:
Heating furnace, including flat-temperature zone and the warm area of linear cooling area two, the heating furnace, which has, penetrates through described two warm areas
Furnace chamber；
Quartz ampoule, is plugged in the furnace chamber of the heating furnace and the two can be moved along furnace chamber is axially opposing, the quartz
Pipe has inner cavity, one end sealing, open at one end, vacuum-pumping.
Quartz boat is combined, the combination quartz boat is formed by main boat, material boat and long brilliant sleeve combination, and three is separable.
The material boat is open quartz boat, for placing ZnTe polycrystalline particle；The main boat is that one end is closed, and one end has frosted to open
Material boat is placed in the quartz boat of mouth, closing one end, and open one end is used to connect long brilliant casing.The long brilliant casing is with frosted mouth
With the combination quartz piece of a quartz pushrod, frosted mouth can connect sealing, frosted mouth and quartz pushrod joint with main boat frosted mouth
In tip-shape.
Flange, the flange are mountable to quartz ampoule open end, and an aspirating hole and a closed piston mouth are provided on flange,
The quartz pushrod of long crystalline substance casing passes through piston mouth and can axially move horizontally under conditions of keeping closed.
Further, the heating furnace is driven to realize the movement relative to quartz ampoule, the constant temperature by driving device
Area and linear cooling area are axially arranged successively along furnace chamber.The range of heating furnace flat-temperature zone is greater than the maximum that material boat can relatively move
Range, i.e., in crystal growing process, material boat is always positioned at flat-temperature zone.
Further, which further includes the thermometric galvanic couple set on material boat bottom and long brilliant cannula tip, long brilliant set
Quartz pushrod plays the role of temperature guidance in pipe, makes formation temperature concave point at its tip, is conducive to the growth of crystal.Further include
Controller and the thermometric galvanic couple and the driving device are electrically connected, for obtaining the inner cavity temperature of the thermometric galvanic couple detection
Data, and issue regulations speed to the driving device according to the inner cavity temperature data got or stop mobile control and believe
Number, to control movement of the heating furnace relative to quartz ampoule.In addition, electric furnace can be used in the heating furnace.Can be horizontally disposed with or
Person is vertically arranged.
Further, quartz ampoule vacuum-pumping, preferably 10-5Pa or less.
Further, the quartz ampoule be equipped with communicated with inner cavity for after vacuumizing to the ventilation mouth of interior applying argon gas,
In quartz ampoule can applying argon gas, ar pressure is adjustable, to adjust crystal growth speed.
The device have the first working condition and the second working condition, in first working condition, the main boat with
Long crystalline substance casing separation takes out quartzy intraductal atmospheric pressure to 10-5Then Pa pours argon gas；In second working condition, main boat and length
Brilliant casing is connected by frosted mouth, confined space is formed in main boat, heating material boat is to target temperature, and heating furnace is with constant speed edge
Axial movement.
The present invention also provides a kind of methods using above-mentioned apparatus vapor phase growth ZnTe monocrystal, comprising the following steps:
A) ZnTe polycrystalline particle material is put into material boat, closes outer quartz ampoule；
B) 10 are evacuated to-5Pa or less；
C) quartz ampoule is filled with argon gas to required pressure；
D) quartz pushrod for pushing long brilliant casing makes the frosted mouth of long brilliant casing combine to form confined space with the frosted mouth of main boat；
E) kindling temperature is to required temperature；
F) after entering steady-working state, heating furnace was moved axially with 5-10mm/ days speed, keeps the steady nothing of stove operation
Shake, in furnace body moving process, keeps long crystal face solid/gas interface temperature constant；
G) continue 2-3 days, complete long brilliant process.
The beneficial effects of the present invention are: the present invention is designed by unique structure, solid gas when can make ZnTe crystal growth
The growing environment that interface is kept constant, be advantageously implemented ZnTe monocrystalline stablizes growth.
Detailed description of the invention
Attached drawing 1 is a kind of apparatus structure schematic diagram of vapor phase growth ZnTe monocrystal of the invention.
Attached drawing 2 is the warm area schematic diagram of heating furnace in a kind of device of vapor phase growth ZnTe monocrystal of the invention.
Figure label are as follows: 1. heating furnaces；2. quartz ampoule；3. main boat；4. material boat；5.ZnTe polycrystalline particle material；6. long crystalline substance casing；
7. flange；8. constant temperature zone；9. linearly cooling region.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so as to advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art.As shown in the specification and claims, term " includes " and "comprising" are only
Prompt included the steps that clearly identify and element, and these steps and element do not constitute one it is exclusive enumerate, method or
The step of equipment may also include other or element.
The noun of locality addressed in the present invention is not limited specific to describe convenient and define according to usual observation visual angle
Direction, e.g., "upper", "lower", "left", "right" correspond respectively to upside, downside, left side, the right side of paper in Fig. 1.
It is specially a kind of using the mobile gas of horizontal thermal field the present embodiment provides a kind of device of vapor phase growth ZnTe monocrystal
Mutually grow the device of ZnTe monocrystal.Shown in referring to Fig.1, which includes:
Heating furnace 1, prolonging horizontal direction includes flat-temperature zone 8 and the warm area of linear cooling area 9 two, and described two warm areas are according to furnace
Temperature divides, and the heating furnace 1 has the furnace chamber for penetrating through described two temperature；
Quartz ampoule 2 is plugged in the furnace chamber of the heating furnace 1, and the two can relatively move in the horizontal direction, the stone
2 one end open of English pipe, it is closed at one end, and there is inner cavity；
Quartz boat is combined, You Zhuzhou 3, material boat 4 and long brilliant casing 6 are composed.It combines quartz boat and is set to the quartz ampoule 2
Inner cavity in.Main boat 3 is one end open, and quartz ampoule closed at one end has inner cavity and frosted mouth；Material boat 4 is for holding ZnTe
Polycrystalline particle material 5 is placed in main boat 3；Long crystalline substance casing 6 is made of a quartz pushrod and a quartz piece with frosted mouth.It is main
Frosted mouth can be leaned on to connect between boat 3 and long brilliant casing 6.
The grower has the first working condition and the second working condition, in first working condition, the master
Boat 3 is separated with long brilliant casing 6, takes out in quartz ampoule 2 air pressure to 10-5Then Pa pours argon gas.In second working condition,
Main boat 3 is connect with long brilliant casing 6 by frosted mouth, and confined space, heating material boat 4 to target temperature, heating furnace 1 are formed in main boat 3
It is moved horizontally with constant speed.
Specific in the present embodiment, which is specially a kind of device of vapor phase growth ZnTe monocrystal, the furnace of heating furnace 1
Chamber is horizontally disposed, and shape is matched with the shape of quartz ampoule 2, can accommodate quartz ampoule 2.Opposite quartz ampoule, heating furnace 1 are
Can movably it be arranged in the horizontal direction, flat-temperature zone 8 and linear cooling area 9 are arranged successively from left to right.In ZnTe single crystal growth
When, heating furnace 1 gradually moves from left to right.That is, material boat 4 in main boat 3 is first located at the left side of flat-temperature zone 8 when initial,
The tip location of long crystalline substance casing 6 is located at certain point in linear cooling area.With the growth of ZnTe monocrystalline, crystal solid gas interface becomes
Change, heating furnace 1 is slowly mobile from left to right, keeps movement speed identical as rate of crystalline growth, and ZnTe monocrystalline can be kept raw
The growing environment at long interface is completely the same.
Heating furnace 1 specifically moves left and right under the driving of a driving device.The driving device can be selected in the prior art
Known driving device such as drives heating furnace 1 mobile by motor and transmission device, and toothed belt transmission system can be selected in transmission device
The torque of motor, is converted to the linear motion of synchronous belt or material strip by system or chain transmission system, then passes through linear motion
Synchronous belt or chain-driving heating furnace 1 move left and right.Here, not repeating them here.
Quartz ampoule 2 is in horizontally disposed cylindricality, and the inner cavity also mutually should be cylindricality.Main boat 3 is fixed in cylindricality
Chamber, main 3 left end of boat closing, right end is open, and open end has frosted mouth.Material boat 4 is set to the left end of the cylindrical inner chamber of main boat 3,
Inside holds ZnTe polycrystalline particle material, for being used as ZnTe vapour source.Frosted mouth and quartz pushrod junction are in point in long crystalline substance casing 6
Shape is held, is connected between long crystalline substance casing and main boat by frosted mouth, the quartz pushrod of long crystalline substance casing 6 plays the role of temperature conduction, makes to grow
Formation temperature low spot at the tip of brilliant casing 6, is conducive to crystal growth.
2 bottom of quartz ampoule is additionally provided with thermometric galvanic couple, for measuring the temperature of material 4 bottom of boat.Thermometric galvanic couple is connected with conducting wire,
For the temperature data measured to be transmitted.The device further comprises: controller and the thermometric galvanic couple and being electrically connected, is used for
Obtain the temperature data of the thermometric galvanic couple detection.
In ZnTe single crystal growth, filled with argon gas in the inner cavity of the quartz ampoule 2.2 open end of quartz ampoule is equipped with flange
7.Flange 7 be equipped with communicated with the inner cavity for after vacuumizing to the ventilation mouth of interior applying argon gas.It is closed there are also one on flange 7
Piston mouth, the quartz pushrod of long crystalline substance casing 6 passes through piston mouth and can move horizontally under conditions of keeping closed.
The method of the grower growth ZnTe monocrystal using the present embodiment is described below comprising following step
It is rapid:
5 grams of ZnTe polycrystalline particle material are put into material boat 4 by A, material boat 4 are put into main boat 3, closed quartz tube 2；
B is by evacuating air in quartz ampoule 2 to 10-5Pa or less；
Quartz ampoule 2 is filled with argon gas to 0.8at by C；
D pushes long brilliant casing 6, combines to form confined space with main boat 3；
For E by heating furnace flat-temperature zone furnace temperature to 950 DEG C, linear cooling area is set as 950 DEG C -550 DEG C；
After F enters steady-working state, stove was moved from left to right with 5mm/ days speed, keeps the steady of stove operation
Non-jitter keeps long crystal face solid/gas interface temperature constant in furnace body moving process；
G continues 3 days, completes long brilliant process.
The design philosophy that the present invention uses horizontal thermal field mobile keeps ZnTe crystal by controlling the rate travel of thermal field
Grow the growth conditions consistency such as temperature, the atmosphere of solid/gas interface.Good, the crystal matter with gained ZnTe monocrystal crystalline quality
Measure stable advantage.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
The content of the utility model can be understood in person skilled in the art and is implemented accordingly, can not be limited with this of the invention
Protection scope.Equivalent transformation or modification made by all Spirit Essences according to the present invention should all be covered in protection model of the invention
Within enclosing.
Claims (10)
1. a kind of device of vapor phase growth ZnTe monocrystal characterized by comprising
Heating furnace, successively includes flat-temperature zone and linear cooling area, and the heating furnace has the furnace chamber for penetrating through described two warm areas；
Quartz ampoule, is placed in the furnace chamber of the heating furnace and the two can be moved along furnace chamber is axially opposing, the quartz ampoule tool
There are inner cavity, the closed one end open in one end；
Combine quartz boat, You Zhuzhou, material boat and long brilliant casing composition；
The main boat is that one end is closed, and the quartz boat that the other end has frosted to be open pushes away with quartz and does relatively fixed, is placed in quartz ampoule
It is internal；
The material boat is open quartz boat, closed one end inside main boat is placed in, for holding the polycrystalline particle of ZnTe；
The long brilliant casing is the combination quartz piece with frosted mouth and a quartz pushrod, and frosted mouth can connect with main boat frosted mouth
Sealing is connect, frosted mouth is with quartz pushrod joint in tip-shape；
Flange, the flange are mountable to quartz ampoule open end, and an aspirating hole and a closed piston mouth are provided on flange, long brilliant
The quartz pushrod of casing passes through piston mouth and can move axially under conditions of keeping closed.
2. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that the heating furnace
It is driven to realize that the movement relative to quartz ampoule, the flat-temperature zone and linear cooling area are axially successively arranged along furnace chamber by driving device
Column.
3. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that further include being set to institute
State the thermometric galvanic couple of material boat bottom and long brilliant cannula tip.
4. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that further include:
Controller, controller and thermometric galvanic couple and driving device are electrically connected, for obtaining the inner cavity temperature of the thermometric galvanic couple detection
Degree evidence, and issue regulations speed to the driving device according to the inner cavity temperature data got or stop mobile control and believe
Number, to control movement of the heating furnace relative to quartz ampoule.
5. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that the heating furnace is
Electric furnace, described device further include:
Power supply, for powering to the heating furnace.
6. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that the heating furnace can
Think horizontally disposed or is vertically arranged.
7. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that on the quartz ampoule
To the ventilation mouth of interior applying argon gas after being used to vacuumize equipped with what is communicated with inner cavity.
8. a kind of device of vapor phase growth ZnTe monocrystal according to claim 1, which is characterized in that the device has the
One working condition and the second working condition, in first working condition, the main boat is separated with long brilliant casing, takes out quartz ampoule
Interior air pressure is to 10-5Then Pa pours argon gas；In second working condition, main boat is connect with long brilliant casing by frosted mouth,
Confined space is formed in main boat, to target temperature, heating furnace is axially moveable heating material boat with constant speed.
9. a kind of device of vapor phase growth ZnTe monocrystal according to claim 8, which is characterized in that in crystal growth mistake
Cheng Zhong, material boat are always positioned in the range of flat-temperature zone.
10. using the method for the device vapor phase growth ZnTe monocrystal as described in claim any one of 1-9, feature exists
In, comprising the following steps:
A) ZnTe polycrystalline particle material is put into material boat, passes through flange closure quartz ampoule；
B) 10 are evacuated to-5Pa or less；
C) quartz ampoule is filled with argon gas to required pressure；
D) quartz pushrod for pushing long brilliant casing makes the frosted mouth of long brilliant casing combine to form confined space with the frosted mouth of main boat；
E) kindling temperature is to required temperature；
F) after entering steady-working state, heating furnace was moved axially with 5-10mm/ days speed, in furnace body moving process, is protected
It is constant to hold long crystal face solid/gas interface temperature；
G) continue 2-3 days, complete long brilliant process.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910425527.1A CN110093667A (en) | 2019-05-21 | 2019-05-21 | A kind of device and method of vapor phase growth ZnTe monocrystal |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910425527.1A CN110093667A (en) | 2019-05-21 | 2019-05-21 | A kind of device and method of vapor phase growth ZnTe monocrystal |
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| CN110093667A true CN110093667A (en) | 2019-08-06 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4902376A (en) * | 1988-12-28 | 1990-02-20 | Industrial Technology Research Institute | Modified horizontal bridgman method for growing GaAs single crystal |
| JPH04260684A (en) * | 1991-02-08 | 1992-09-16 | Hitachi Cable Ltd | Production device of single crystal of compound semiconductor |
| JPH0778770A (en) * | 1993-09-07 | 1995-03-20 | Nisshin Steel Co Ltd | Manufacture of compound semiconductor material polycrystal and quartz boat |
| JPH08119792A (en) * | 1994-10-21 | 1996-05-14 | Sumitomo Electric Ind Ltd | Determination of crystallization rate in sublimation method, purification of crystal and method for growing single crystal |
| JPH107497A (en) * | 1996-06-26 | 1998-01-13 | Sumitomo Electric Ind Ltd | Growth of group ii-vi compound semiconductor crystal |
| JP3026340B1 (en) * | 1999-05-13 | 2000-03-27 | 住友電気工業株式会社 | Method of growing II-VI compound semiconductor crystal |
| JP2000344600A (en) * | 1999-06-02 | 2000-12-12 | Sumitomo Electric Ind Ltd | Method and apparatus for growing compound semiconductor crystals of groups ii to iv |
| JP2003238299A (en) * | 2002-02-21 | 2003-08-27 | Sumitomo Electric Ind Ltd | Method of growing group ii-vi compound semiconductor crystal |
| CN210262080U (en) * | 2019-05-21 | 2020-04-07 | 浙江森尼克半导体有限公司 | Device for growing ZnTe monocrystal in gas phase |
-
2019
- 2019-05-21 CN CN201910425527.1A patent/CN110093667A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4902376A (en) * | 1988-12-28 | 1990-02-20 | Industrial Technology Research Institute | Modified horizontal bridgman method for growing GaAs single crystal |
| JPH04260684A (en) * | 1991-02-08 | 1992-09-16 | Hitachi Cable Ltd | Production device of single crystal of compound semiconductor |
| JPH0778770A (en) * | 1993-09-07 | 1995-03-20 | Nisshin Steel Co Ltd | Manufacture of compound semiconductor material polycrystal and quartz boat |
| JPH08119792A (en) * | 1994-10-21 | 1996-05-14 | Sumitomo Electric Ind Ltd | Determination of crystallization rate in sublimation method, purification of crystal and method for growing single crystal |
| JPH107497A (en) * | 1996-06-26 | 1998-01-13 | Sumitomo Electric Ind Ltd | Growth of group ii-vi compound semiconductor crystal |
| JP3026340B1 (en) * | 1999-05-13 | 2000-03-27 | 住友電気工業株式会社 | Method of growing II-VI compound semiconductor crystal |
| JP2000344600A (en) * | 1999-06-02 | 2000-12-12 | Sumitomo Electric Ind Ltd | Method and apparatus for growing compound semiconductor crystals of groups ii to iv |
| JP2003238299A (en) * | 2002-02-21 | 2003-08-27 | Sumitomo Electric Ind Ltd | Method of growing group ii-vi compound semiconductor crystal |
| CN210262080U (en) * | 2019-05-21 | 2020-04-07 | 浙江森尼克半导体有限公司 | Device for growing ZnTe monocrystal in gas phase |
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