CN110085770A - Directional transmissions organic semiconductor electroluminescent device array and preparation based on metal nano electrode - Google Patents
Directional transmissions organic semiconductor electroluminescent device array and preparation based on metal nano electrode Download PDFInfo
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- CN110085770A CN110085770A CN201910420303.1A CN201910420303A CN110085770A CN 110085770 A CN110085770 A CN 110085770A CN 201910420303 A CN201910420303 A CN 201910420303A CN 110085770 A CN110085770 A CN 110085770A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
Directional transmissions organic semiconductor electroluminescent device array and preparation based on metal nano electrode, belong to organic optoelectronic and nanophotonics technical field.On the glass substrate, using photoresist nanometer grating as template, in nanometer grating in the same lateral incline of each raised grid line, the organic electroluminescence device of the nanoscale parallel with place inclined surface is prepared, the organic electroluminescence device of the nanoscale is to stack gradually anode layer Au, hole transmission layer PEDOT:PSS, organic luminous layer F8BT film, electron transfer layer LiF, cathode Al together outward with raised grid line side.Inclined organic electroluminescence device is formed in nanometer grating structure, all organic electroluminescence devices form array architecture.This device realizes its end transmitting working method, obtains the nanometer OLED array of orientation output.
Description
Technical field
The invention belongs to organic optoelectronic and nanophotonics technical field, propose that a kind of nanoscale is organic partly to lead
The design philosophy of bulk electroluminescence device (OLED) realizes its end transmitting working method, obtains the OLED battle array of orientation output
Column.
Background technique
Organic electroluminescence device (organic light emitting diodes, OLED) wide, weight with visual angle
Gently, it is suitable for a series of features such as flexible substrates, simple process, there is huge application in novel display and solid-state lighting field
Prospect.The optical coupling output efficiency or output light of the organic electroluminescence device of typical transparent substrates " sandwich " slab construction
Extraction efficiency there was only 20% or so, there is 80% light to be limited in device inside or be depleted during transmission.It is logical
It crosses and introduces micro-nano structure in the active layer of device, electrode layer even substrate, device can be improved using diffraction and scattering effect
Coupling efficiency.Correlative study has wide report.But these devices still use plate " sandwich " structure, and
There is no comparatively ideal effect of optimization.It is mostly at present efficiency, coloration and the stability of color etc. for the research of OLED device
Aspect, the transmitting directivity of device are not paid close attention to enough.Preparing, there is the OLED device of directional transmissions characteristic to pass in biology
Sensor, automatic stereo naked eye three-dimensional display and visible light communication direction have significant application value.In addition, with nanometer skill
The continuous promotion of the rapid development of art, especially micro-nano technology technical level and device designed capacity, for device miniaturization and
The requirement of integrated level also increasingly increases.The luminescent device for preparing micro/nano-scale becomes giving priority to for current photoelectron technical field
Direction.
Summary of the invention
The present invention proposes a kind of nanoscale organic electroluminescence device array with end transmitting, orientation output characteristics
Design and preparation method, realize expectation function.
Directional transmissions organic semiconductor electroluminescent device array based on metal nano electrode, which is characterized in that in glass
In glass substrate, using photoresist nanometer grating as template, in nanometer grating in the same lateral incline of each raised grid line,
Prepare the nanoscale organic electroluminescence device parallel with place inclined surface.The organic electroluminescence of the nanoscale
Part is to stack gradually anode layer Au (40~100nm of thickness range), hole transmission layer together outward with raised grid line side
PEDOT:PSS (5~20nm of thickness range), organic luminous layer F8BT film (60~100nm of thickness range), electron transfer layer
LiF (1~2nm), cathode Al (60~100nm).Inclined organic electroluminescence device is formed in nanometer grating structure, is owned
Organic electroluminescence device formed array architecture, as shown in Figure 1.The angle of raised grid line inclined surface and normal namely organic
The tilt angle of electroluminescent device is 10 °~80 ° preferably 30 °.This angle can realize larger range by changing grating pattern
Tuning and screen periods, duty ratio, modulation depth, inclination vapor deposition angle it is closely related.Directional transmissions of the present invention
For the inclined surface direction where organic electroluminescence device, it is fixed that the angular range at 1/2 is reduced to using light emitting axis as center intensity
Justice is light emitting full-shape.Light emitting full angular range is the angular range where tilt angle ± 10 ° of organic electroluminescence device.
Specific preparation flow includes following four step altogether:
Step 1: interference photoetching technology prepares photoresist grating template；
Step 2: the nano thin-film array of Au is deposited on all inclined surface of grating grid the same side as anode layer；
Step 3: then on the anode layer successively spin coating PEDOT:PSS and F8BT solution as hole transmission layer and organic
Luminescent layer；
Step 4: and then LiF and Al nano thin-film array is sequentially depositing on the inclined surface of step 3 as electron-transport
Layer and cathode layer.
In above-mentioned preparation flow, the grating preparation method in step 1 can prepare skill using existing various micro-nano structures
Art, such as electron beam lithography, reactive ion beam etching technique etc.；Step 2: the preparation of Au, Al, LiF film in four can be
Existing vacuum evaporation technology, can also be using various film preparing technologies, such as magnetron sputtering, d.c. sputtering etc.；Step 3
The preparation of middle organic luminous layer can be existing spin-coating method, can also be using technologies such as vacuum evaporation, magnetron sputterings.
Advantageous feature of the invention
(1) present invention realizes designing and preparing for nanoscale organic semiconductor electroluminescent device, in photoelectricity subset
Designing at field and micro battery has huge application prospect.
(2) preparation of device is using inclination vapor deposition binding soln method, simple process, at low cost, suitable large area preparation.
(3) scale of device can be achieved with emitting after short-distance transmission, can be improved in nanometer scale, the light wave of output
The light extraction efficiency of device.
(4) organic semiconductor electroluminescent device proposed by the present invention has good directional transmissions characteristic.Pass through change
The directional transmissions of different angle may be implemented in the pattern of grating template.
Detailed description of the invention
Fig. 1, nanoscale OLED Array Design and structural schematic diagram.
Fig. 2, preparation flow: (a) fabrication cycle is the photoresist grating of 500nm；(b) vapor deposition 60nm is tilted in grating side
Au as anode；(c) PEDOT:PSS the and F8BT solution of sequence spin coating is as hole transmission layer and organic luminous layer；(d) exist
Grating the same side sequence inclination vapor deposition 1nm LiF and 100nm Al is as electron transfer layer and cathode.
The cross-section SEM images of Fig. 3, nanoscale OLED array.
The electroluminescent emission spectrum (U=22V) of device under Fig. 4, the different direction of the launch.
Specific embodiment
Below with reference to embodiment, the present invention will be further described, but the present invention is not limited to following embodiments.
Embodiment 1
(1), choosing size is 2 × 2cm2Glass as substrate, carved again with high power oxygen plasma after cleaning repeatedly
5~10min is lost, the organic matter on substrate is completely removed.Then, the spin coating S1805 photoresist on substrate, revolving speed 3000rpm, rotation
Apply 30s.Prepare the photoresist film that thickness is about 200nm.Then sample is put and heats 90s at 110 DEG C on hot plate.It connects
Sample is exposed using the laser interference optical path of 343nm, can be obtained after development the period be 500nm, modulation depth
The photoresist grating structure of about 180nm, such as Fig. 2 (a).
It (2), is the template for preparing the organic electroluminescence device of nanoscale with the grid line of photoresist grating.Utilize inclination
Evaporation coating technique deposits Au layers in grating side and is used as anode, such as Fig. 2 (b).The thickness of Au film is about 60nm, inclination when vapor deposition
Angle initialization is 55 °.
(3), using the PEDOT:PSS of revolving speed 4000rpm spin coating 20nm thickness (concentration be 1.3~1.7% aqueous solution) as
The hole transmission layer of device, time 30s.In order to make the water vapour evaporating completely in sample, 110 DEG C of heating is placed it in
10min on plate.Then it using dimethylbenzene as solvent, prepares solubility and is the F8BT solution of 15mg/ml, and be spin-coated on PEDOT:
In PSS layer, revolving speed 3500rpm, spin coating 30s.Organic light emission of the F8BT film that formation thickness is about 100nm as device
Layer.Sample is placed on again in 80 DEG C of heating plate, heating time 5min, such as Fig. 2 (c).
(4), using inclination evaporation coating technique be sequentially depositing 1nm LiF and 100nm Al as the electron transfer layer of device and
Cathode (such as Fig. 2 (d)).It is consistent when the direction for tilting vapor deposition and angle are with vapor deposition Au with reference to step (2).
In the cross section SEM figure of OLED device array (such as Fig. 3), it can be observed that in every grating grid side all shapes
At independent OLED device.Au and Al electrode layer is located at the same side of photoresist grating grid line, and each device is by nanometer ruler
Au the and Al electrode of degree clips F8BT organic luminous layer and corresponding electronics, hole transmission layer are constituted.Grating grid inclined surface and
The angle of normal is 30 °, therefore the tilt angle of organic electroluminescence device is also 30 °.This nanoscale devices are organic
The light generated in luminescent layer, which does not need to propagate, can realize transmitting over long distances very much, effectively reduce light and be limited in device inside
Or the loss in transmission process.Device has good directional transmissions simultaneously.Fig. 4, which gives, to be measured under different angle
The electroluminescent spectrum (driving voltage U=22V) of device.The normal direction of sample is defined as 0 ° of position, is surveyed every 10 ° of increases
The angle of examination.When fibre-optical probe is placed near grating bevel direction, i.e., in 20 °, 30 ° and 40 ° of positions, can obtain strongest
Spectrum peak signal.Test position is just consistent with device light output direction at this time.As test angle deviates light emitting direction,
Obtained device transmitting optical signal is also more and more weaker.At 60 °, almost detect less than spectral signal.Device angles tune spectrum
Variation, illustrate that the coupling output light of device can emit along the direction parallel with grating slope face, can in directional transmissions position
To be collected into very strong electroluminescent spectrum.
Claims (10)
1. a kind of directional transmissions organic semiconductor electroluminescent device array based on metal nano electrode, which is characterized in that
In substrate of glass, using photoresist nanometer grating as template, the same lateral incline of each raised grid line in nanometer grating
On, prepare the organic electroluminescence device of the nanoscale parallel with place inclined surface, the organic electroluminescence of the nanoscale
Luminescent device is to stack gradually anode layer Au together, hole transmission layer PEDOT:PSS, organic outward with raised grid line side
Luminescent layer F8BT film, electron transfer layer LiF, cathode Al；Inclined organic electroluminescence is formed in nanometer grating structure
Part, all organic electroluminescence devices form array architecture.
2. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that 40~100nm of anode layer Au thickness range.
3. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that 5~20nm of hole transmission layer PEDOT:PSS thickness range.
4. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that 60~100nm of organic luminous layer F8BT film thickness range.
5. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that 1~2nm of thickness range of electron transfer layer LiF.
6. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that 60~100nm of thickness range of cathode Al.
7. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that the tilt angle of the angle namely organic electroluminescence device of raised grid line inclined surface and normal is 10 °
~80 °.
8. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode according to claim 7
Array, which is characterized in that angle is 30 °.
9. a kind of directional transmissions organic semiconductor electroluminescent device based on metal nano electrode described in accordance with the claim 1
Array, which is characterized in that the directional transmissions are the inclined surface direction where organic electroluminescence device, are with light emitting axis
Center intensity is reduced to the angular range at 1/2 and defines angular range.
10. according to a kind of described in any item directional transmissions organic semiconductor electricity based on metal nano electrode of claim 1-9
The preparation method of electroluminescence device array, which is characterized in that comprise the steps of:
Step 1: interference photoetching technology prepares photoresist grating template；
Step 2: the nano thin-film array of Au is deposited on all inclined surface of grating grid the same side as anode layer；
Step 3: then on the anode layer successively spin coating PEDOT:PSS and F8BT solution as hole transmission layer and organic light emission
Layer；
Step 4: then be sequentially depositing on the inclined surface of step 3 LiF and Al nano thin-film array as electron transfer layer and
Cathode layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192969A (en) * | 2020-01-08 | 2020-05-22 | 大连理工大学 | Light-emitting field effect transistor structure based on poly F8BT crystal and preparation method |
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|---|---|---|---|---|
| CN101487976A (en) * | 2009-02-27 | 2009-07-22 | 北京工业大学 | Solution method preparation for metal photon crystal |
| CN101896839A (en) * | 2007-12-12 | 2010-11-24 | 奥斯兰姆奥普托半导体有限责任公司 | Light-emitting device |
| CN210245553U (en) * | 2019-05-20 | 2020-04-03 | 北京工业大学 | Directional emission organic electroluminescent device array based on metal nano-electrode |
-
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- 2019-05-20 CN CN201910420303.1A patent/CN110085770A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101896839A (en) * | 2007-12-12 | 2010-11-24 | 奥斯兰姆奥普托半导体有限责任公司 | Light-emitting device |
| CN101487976A (en) * | 2009-02-27 | 2009-07-22 | 北京工业大学 | Solution method preparation for metal photon crystal |
| CN210245553U (en) * | 2019-05-20 | 2020-04-03 | 北京工业大学 | Directional emission organic electroluminescent device array based on metal nano-electrode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192969A (en) * | 2020-01-08 | 2020-05-22 | 大连理工大学 | Light-emitting field effect transistor structure based on poly F8BT crystal and preparation method |
| CN111192969B (en) * | 2020-01-08 | 2021-01-05 | 大连理工大学 | Light-emitting field effect transistor structure based on poly F8BT crystal and preparation method |
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