CN110085738A - A kind of organic single-crystal Spin Valve and the preparation method and application thereof - Google Patents
A kind of organic single-crystal Spin Valve and the preparation method and application thereof Download PDFInfo
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- CN110085738A CN110085738A CN201810079081.7A CN201810079081A CN110085738A CN 110085738 A CN110085738 A CN 110085738A CN 201810079081 A CN201810079081 A CN 201810079081A CN 110085738 A CN110085738 A CN 110085738A
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Abstract
The invention discloses a kind of organic single-crystal Spin Valves and the preparation method and application thereof.Organic single-crystal Spin Valve of the present invention includes: substrate, ferromagnetic hearth electrode, organic single-crystal semiconductor micro/nano material, buffer layer, ferromagnetic top electrode and protection against oxidation layer.Because its structure is single, crystal quality is good, can effectively avoid the influence that the factors such as defect in material, impurity, crystal boundary are injected spin and scattered, and then largely improve material spin diffusion length.1) used preparation method, which has the advantages that, effectively solves the problems, such as that it is big to inject interface scattering for spin caused by organic semiconductor does not infiltrate in ferromagnetic electrode；2) equipment needed for is relatively easy, and universality is strong, reproducible, provides a kind of new method for constructing organic single-crystal Spin Valve；3) the preparation difficulty for facilitating to reduce organic spinning electron and opto-electronic device, plays important facilitation to the development of Organic spintronics and organic spin photoelectronics.
Description
Technical field
The invention belongs to Spin Valve fields, and in particular to a kind of organic single-crystal Spin Valve and the preparation method and application thereof.
Background technique
In recent years, spintronics is got the attention in scientific research field.Its purport is the spin dimension other than charge
Degree studies the movement of carrier, and content includes the injection of electron spin, transports, detects and regulate and control etc..In turn
It combines it with the characteristic of traditional optics, electricity and magnetics etc., realizes novel and multifunctional spin electric device.
Organic semiconductor because mostly by carbon, the light atoms such as hydrogen are constituted, and Quantum geometrical phase is weaker with hyperfine interaction, because
This is intrinsic with longer spin relaxation time, is to study the excellent of spin transport to put down for inorganic semiconductor material
Platform.Simultaneously as organic semi-conductor flexibility characteristics, can form with ferromagnetic/semimetal electrode preferably contact in principle,
This scattering of spinning between reducing interface has more advantage for improving spin injection rate.Xiong in 2004 et al. is prepared for first
Organic spin valve LSMO/Alq3/Co/Al, and observed in 11K about 40% magneto-resistor.Wherein 8-hydroxyquinoline aluminum
With a thickness of 130nm, the size of magneto-resistor increases with the thickness of organic transport layer and is reduced.Hereafter the organic spin for preparing and studying
In valve device, the organic semiconducting materials as transport layer are amorphous or microcrystalline film, because there are a large amount of defects, impurity for it
With crystal boundary etc., its spin diffusion length is made to be generally only tens nanometer.The conventional preparation techniques of organic spin valve device are wanted simultaneously
Ask high, yields is very low.
Summary of the invention
To improve the above problem, present invention firstly provides a kind of organic single-crystal Spin Valves comprising:
Substrate, ferromagnetic hearth electrode, organic single-crystal semiconductor micro/nano material, buffer layer, ferromagnetic top electrode and anti-oxidation guarantor
Sheath；
Wherein, the ferromagnetic hearth electrode is as spin injection end；Ferromagnetic top electrode is as spin end of probe；Organic semiconductor
Micro/nano material is as spin transport layer；
Preferably, the substrate, ferromagnetic hearth electrode, organic single-crystal semiconductor micro/nano material, buffer layer, ferromagnetic top electricity
Pole and protection against oxidation layer material are arranged successively from bottom to top and directly contact；
For the substrate, there is no limit can be selected according to ferromagnetic hearth electrode, such as according to ferromagnetic hearth electrode material
Material lanthanum strontium manganese oxygen (LSMO) is selected as strontium titanates (STO), or selects silicon wafer or PET to make according to ferromagnetic hearth electrode material C o, NiFe
For substrate material；
The ferromagnetic hearth electrode is not particularly limited, it is excellent to be usually used in preparing the ferromagnetic hearth electrode material of Spin Valve
It is selected as the ferromagnetic hearth electrode material of perovskite structure, for example, lanthanum strontium manganese oxygen (LSMO) of perovskite structure；
The organic semiconductor monocrystal micro/nano material can be two or more aryl optionally substituted or unsubstituted, miscellaneous
In aryl (such as the heteroaryls such as sulphur, nitrogen, selenium, tellurium), naphthenic base or Heterocyclylalkyl (such as the Heterocyclylalkyls such as sulphur, nitrogen, selenium, tellurium)
It is one or more by and or the compound that is constituted in a manner of being connected directly；Such as selected from tetrathiafulvalene class compound, phthalocyanines
One of compound, fullerene and its derivative, the organic semiconductor monocrystal micro/nano material of/naphthalimide derivative
Or it is a variety of；
The length and width of the organic semiconductor monocrystal micro/nano material can be 100nm-1000 μm, such as length and width is
100nm-500μm；Its thickness can be 1-500nm, for example, 50-400nm, for example 10-300nm；The organic semiconductor list
Brilliant micro/nano material can also be laminated structure；As example, 2,6 dibenzanthracene (2,6-DPA) monocrystalline micro materials are used；
The buffer layer be one of aluminium oxide, magnesia, lithium fluoride, graphene oxide, self assembly cobalt nano material,
Two or more；Its thickness can be 1-10nm, for example, 1-3nm；
The ferromagnetic top electrode be one of cobalt, iron, nickel, two or more；
The protection against oxidation layer can be one or both of gold, aluminium；Its thickness can be 5-300nm, for example,
20-200nm。
Organic single-crystal Spin Valve of the present invention, under externally-applied magnetic field, current -voltage curve with magnetic field it is different
Change；Such as when temperature is 2K, and externally-applied magnetic field is 0.5T, STO/LSMO/2, in the device of 6-DPA/AlOx/Co/Au structure
The magneto-resistor of a size about 10% is found when relative to null field.
The present invention also provides the preparation methods of organic single-crystal Spin Valve as described above, including walk as follows poly-:
1) ferromagnetic hearth electrode is constructed using mask plate；
2) organic semiconductor monocrystal micro/nano material is transferred on the ferromagnetic hearth electrode that step 1) obtains；
3) buffer layer is constructed using mask plate；
4) it keeps the mask plate of step 3) constant, buffer layer is handled；
5) it keeps the mask plate of step 4) constant, constructs ferromagnetic top electrode and protection against oxidation layer, obtain organic list
Brilliant Spin Valve.
Preparation method according to the present invention, in step 1), the mask plate can be patterned metal foil；
In step 1), constructing ferromagnetic hearth electrode can be using direct current opposite direction target material magnetic sputtering technology, such as by mask plate
It is put into after being fixed with substrate material in direct current opposite direction target material magnetic sputtering cavity and prepares ferromagnetic hearth electrode；
Preparation method according to the present invention in step 2), can use when shifting organic semiconductor monocrystal micro/nano material
Mechanical probes platform and Powerful Light Microscope；
Preparation method according to the present invention, step 3) -5) in, the mask plate is that patterned metal foil or polyamides are sub-
Amine film；
Preparation method according to the present invention, step 3) -5) in, building buffer layer, ferromagnetic top electrode and protection against oxidation
Layer can be using template thermal evaporation techniques in situ.
As example, organic single-crystal Spin Valve of the invention can be prepared via a method which:
A1) pattern metal mask plate: the metal mask version of customization reasonable size as needed, patterning size determine
The size of lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode；
A2) the preparation of lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode: the metal mask version and strontium titanates (STO) that will be patterned into serve as a contrast
Bottom fixes, and is put into direct current facing targets sputtering cavity, and underlayer temperature is maintained at 700-800 DEG C in growth course, cavity internal pressure
About 0.5-1.0Pa by force, carrier gas are ratio Ar:O2The gaseous mixture of=5:3；Lanthanum strontium manganese oxygen (LSMO) ferromagnetic electrode of 100nm thickness
After the completion of epitaxial growth, the pure O in situ in 3KPa2In atmosphere, kept for 1-5 hour of 700-800 DEG C of annealing, then with 5K/min
Speed be down to room temperature taking-up；
A3) the transfer of 2,6 hexichol anthracene single crystals: at probe station (Micromanipulator 6150probe station)
Under, by high-resolution optical microscopy (400-1000 times), the probe for being about 1 μm by syringe needle thickness is by 2,6 dibenzanthracenes
Monocrystalline is shifted by Van der Waals force, lies against step a2) on obtained lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode；
A4) the preparation of buffer layer: the metal or polyimide mask version that will be patterned into and the lanthanum strontium manganese oxygen for having shifted monocrystalline
(LSMO) ferromagnetic hearth electrode fixes, and passes through the aluminium of vacuum coating equipment thermal evaporation 1-3nm on monocrystalline；Then it is placed in oxygen plasma
AlOx buffer layer is obtained after aoxidizing 1-2 hours in body generator；
A5) the preparation of ferro-cobalt magnetopause electrode: buffer layer obtained by step a4) is again placed in vacuum coating equipment in buffer layer
The ferro-cobalt magnetopause electrode of top thermal evaporation 5-30nm and the gold of 20-200nm obtain sectional area and are about as protection against oxidation layer
100-500 μm, wide about 500 μm of 2,6 hexichol anthracene single crystal Spin Valves.
The present invention also provides the purposes of organic single-crystal Spin Valve as described above, can be used for preparing magnetic memory device, magnetic sensing
Device etc..
Beneficial effects of the present invention:
1. the electrode material that organic single-crystal Spin Valve device of the present invention is chosen is ferromagnetic electrode, intermediate transport layer is to have
Machine semiconductor monocrystal, transporting length is hundred nanometers；Organic single-crystal Spin Valve device of the present invention has magnetoelectricity under magnetic field
Hinder characteristic.
2. 1) preparation method of the present invention, which has the advantages that, effectively solves organic semiconductor in ferromagnetic electrode
On do not infiltrate caused by the big problem of spin injection interface scattering；2) equipment needed for is relatively easy, and universality is strong, reproducible,
Provide a kind of new method for constructing organic single-crystal Spin Valve；3) facilitate to reduce the system of organic spinning electron and opto-electronic device
Standby difficulty, plays important facilitation to the development of Organic spintronics and organic spin photoelectronics.System of the invention
Preparation Method yields is high.
3. the present invention can reduce defect, miscellaneous by the preparation process of exploitation organic single-crystal self-spining device to the full extent
The influence of the unfavorable factors such as matter, crystal boundary, in particular for small molecule on ferromagnetic electrode nonwettable situation, provide effective
Solution.By improving carrier spin diffusion length, the spin transport of longer distance can be realized, this is further preparation
Organic spin composite function device and its provide can in the applications of Organic spintronics, organic spin opto-electronics
Energy.
Detailed description of the invention
Fig. 1 (a) is the optical microscope photograph of 2,6 hexichol anthracene single crystal micro materials prepared by preparation example 1；It (b) is correspondence
The optical microscope photograph of 2,6 dibenzanthracene films；(c) SEAD of the 2,6 hexichol anthracene single crystal micro materials prepared for preparation example 1
Figure.
Fig. 2 is the optical microscope photograph of the ferromagnetic hearth electrode of lanthanum strontium manganese oxygen on strontium titanates substrate.
Fig. 3 is the structural schematic diagram of organic single-crystal Spin Valve of the present invention；Each appended drawing reference meaning is as follows in figure: 31 be metatitanic acid
Strontium (STO) substrate；32 be lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode；33 be 2,6 hexichol anthracene single crystal micro materials；34 be buffering
Layer；35 be ferro-cobalt magnetopause electrode；36 be golden protection against oxidation layer.
Fig. 4 is the MR curves of 2,6 hexichol anthracene single crystal Spin Valves prepared by embodiment 1.
Specific embodiment
Below in conjunction with specific embodiment to organic single-crystal Spin Valve and its preparation method and application of the invention do more into
The detailed description of one step.It should be appreciated that the following example is merely illustrative the ground description and interpretation present invention, and it is not necessarily to be construed as
Limiting the scope of the invention.All technologies realized based on above content of the present invention are encompassed by that the present invention is directed to protect
In the range of.
Unless otherwise indicated, raw materials and reagents used in the following embodiment are commercial goods, or can be by
Perception method preparation.
2,6 dibenzanthracenes (2,6-DPA) molecular material employed in following embodiments is referring to Chinese patent literature
Description in (201310079115.X) carries out organic synthesis preparation.
2,6 dibenzanthracenes (2,6-DPA) monocrystal material reference literature Nat Commun 6 employed in following embodiments,
Description in 10032 (2015) carries out organic synthesis preparation.
Opposite target magnetic control sputtering method employed in following embodiments refers to Chinese patent literature
(CN200310122021.2) preparation of ferromagnetic hearth electrode is carried out.
The preparation of preparation example 1,2,6 dibenzanthracenes (2,6-DPA) monocrystalline micro materials
1) Wafer Cleaning:
With SiO2The silicon wafer of oxide layer is before use, the hydrogen peroxide for being about first 1:2 with ratio: the concentrated sulfuric acid (electric furnace heating,
Boil) cleaning, then successively finally quickly blown using nitrogen with deionized water, dehydrated alcohol and each ultrasound of acetone about 10 minutes
Dry doubling, which is placed in oxygen plasma generator, to be handled about 15 seconds.
2) silicon chip surface is modified
Cleaned silicon wafer is placed in the culture dish in vacuum oven, vacuumize and is heated to 80 DEG C about 1 hour,
It keeps vacuum to be allowed to be down to room temperature, a small amount of n-octadecane base trichlorosilane (OTS) is added dropwise near silicon wafer in culture dish, vacuumizes
And it is heated to 120 DEG C about 2 hours, keep vacuum to be allowed to be down to room temperature.Silicon wafer after modification is successively using n-hexane, three using preceding
Chloromethanes, dehydrated alcohol and each ultrasound of acetone about 10 minutes, are finally quickly dried up with nitrogen.
3) preparation of 2,6 dibenzanthracenes (2,6-DPA) monocrystalline micro materials
2,6-DPA monocrystalline micro materials are prepared by the method for physical vapour deposition (PVD): 2,6-DPA powder is placed in pipe
The silicon wafer with OTS self-assembled monolayer after cleaning is placed in tube furnace and sunk by (150-180 DEG C) heating sublimation at formula furnace heat source
Product area (50-60 DEG C), chamber pressure are less than 5Pa, and the time of crystal growth controlled at 4-8 hours.
Fig. 1 (a) is 2,6 hexichol anthracene single crystal optical microscope photographs of preparation, prepares resulting material as seen from Figure 1
For laminated structure, size is about 500*400 μm2Left and right.(b) optical microscopy for 2,6 dibenzanthracene films of corresponding preparation shines
Piece, it can be seen that due to its not infiltrating to lanthanum strontium manganese oxygen (LSMO) electrode, cause that there are many thin film grain-boundary, continuity is poor.Figure
(c) scheme for the SEAD of 2,6 hexichol anthracene single crystal micro materials, it is single by scheming obtain it can be seen from (c) 2,6 dibenzanthracenes (2,6-DPA)
Brilliant micro materials are mono-crystalline structures.
Embodiment 1
The preparation of lanthanum strontium manganese oxygen 1. (LSMO) ferromagnetic hearth electrode
1.1) pattern metal mask plate
The metal mask version of customization reasonable size as needed, patterning size determine that lanthanum strontium manganese oxygen (LSMO) is ferromagnetic
The size of hearth electrode.Width is preferably 500 μm herein.
1.2) preparation of lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode
The metal mask version that will be patterned into is fixed with strontium titanates (STO) substrate, is put into direct current facing targets sputtering cavity,
In growth course, underlayer temperature is maintained at 700-800 DEG C, and pressure is about 0.5-1.0Pa in cavity, and carrier gas is ratio Ar:O2=
The gaseous mixture of 5:3.After the completion of lanthanum strontium manganese oxygen (LSMO) ferromagnetic electrode epitaxial growth of 100nm thickness, the pure O in situ in 3KPa2Gas
It in atmosphere, is kept for 1-5 hour of 700-800 DEG C of annealing, room temperature is then down to the speed of 5K/min and is taken out.
Fig. 2 is the optical microscope photograph of the ferromagnetic hearth electrode of lanthanum strontium manganese oxygen on the strontium titanates substrate of preparation.
The transfer of 2.2,6 hexichol anthracene single crystal micro materials
At probe station (Micromanipulator 6150probe station), pass through high-resolution optical microphotograph
Mirror (400-1000 times), 2, the 6 hexichol anthracene single crystal micro materials for obtaining preparation example 1 by the probe that syringe needle thickness is about 1 μm
It is shifted, is lain against on lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode that step 1.2) obtains by Van der Waals force.
3. the preparation of buffer layer
The metal or polyimide mask version that will be patterned into and lanthanum strontium manganese oxygen (LSMO) the ferromagnetic hearth electrode for having shifted monocrystalline
It fixes, passes through the aluminium of vacuum coating equipment thermal evaporation 1-3nm on monocrystalline；Then it is placed in oxygen plasma generator and aoxidizes 1-
AlOx buffer layer is obtained after 2 hours.
4. the preparation of ferro-cobalt magnetopause electrode
Step 3 gained buffer layer is again placed in vacuum coating equipment, on the buffer layer the ferro-cobalt of square thermal evaporation 5-30nm
The gold of magnetopause electrode and 20-200nm as protection against oxidation layer, obtain sectional area be about 100-500 μm, it is wide about 500 μm 2,6
Hexichol anthracene single crystal Spin Valve.
Fig. 3 is the structural schematic diagram of organic single-crystal Spin Valve.Wherein, 31 be strontium titanates (STO) substrate, and 32 be lanthanum strontium manganese oxygen
(LSMO) ferromagnetic hearth electrode, 33 be 2,6 hexichol anthracene single crystals, and 34 be AlOx buffer layer, and 35 be ferro-cobalt magnetopause electrode, and 36 be golden oxygen
Change protective layer.
The test of 2 device performance of embodiment
2,6 hexichol that embodiment 1 is prepared with the physical property measuring system (PPMS) of Quantum Designed
Anthracene single crystal Spin Valve is tested.Under the additional magnetic field 0.5T, magneto-resistor variation about 10% when 2K.
Fig. 4 is the MR curves (MR) of 2,6 hexichol anthracene single crystal Spin Valves, can be seen that spin is single by the symmetrical MR curve of Fig. 4
Brilliant Spin Valve device is successfully prepared, and magnetic resistance change rate is about 10% under 2K.
More than, embodiments of the present invention are illustrated.But the present invention is not limited to above embodiment.It is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of organic single-crystal Spin Valve, comprising: substrate, ferromagnetic hearth electrode, organic single-crystal semiconductor micro/nano material, buffering
Layer, ferromagnetic top electrode and protection against oxidation layer.
2. organic single-crystal Spin Valve as described in claim 1, wherein the substrate, ferromagnetic hearth electrode, organic single-crystal semiconductor
Micro/nano material, buffer layer, ferromagnetic top electrode and protection against oxidation layer material are arranged successively from bottom to top and directly contact.
3. organic single-crystal Spin Valve as claimed in claim 1 or 2, wherein there is no limit can be according to iron for the substrate
Magnetic hearth electrode is selected, such as is selected as strontium titanates (STO) according to ferromagnetic hearth electrode material lanthanum strontium manganese oxygen (LSMO), or according to
Ferromagnetic hearth electrode material C o, NiFe selects silicon wafer or PET as substrate material；
It is not particularly limited preferably for the ferromagnetic hearth electrode, to be usually used in preparing the ferromagnetic hearth electrode material of Spin Valve,
The preferably ferromagnetic hearth electrode material of perovskite structure, for example, lanthanum strontium manganese oxygen (LSMO) of perovskite structure.
4. organic single-crystal Spin Valve as described in any one of claims 1-3, wherein the organic semiconductor monocrystal micro-/ nano material
Material can be two or more aryl optionally substituted or unsubstituted, heteroaryl (such as the heteroaryls such as sulphur, nitrogen, selenium, tellurium), naphthenic base
One of Heterocyclylalkyl (such as the Heterocyclylalkyls such as sulphur, nitrogen, selenium, tellurium) or it is a variety of by and or constituted in a manner of being connected directly
Compound；Such as spread out selected from tetrathiafulvalene class compound, phthalocyanine-like compound, fullerene and its derivative ,/naphthalimide
One of organic semiconductor monocrystal micro/nano material of biology is a variety of；
Preferably, the length and width of the organic semiconductor monocrystal micro/nano material can be 100nm-1000 μm, such as length and width is
100nm-500μm；Its thickness can be 1-500nm, for example, 50-400nm, for example 10-300nm；The organic semiconductor list
Brilliant micro/nano material can also be laminated structure；
Such as use 2,6 dibenzanthracenes (2,6-DPA) monocrystalline micro materials.
5. organic single-crystal Spin Valve according to any one of claims 1-4, wherein the buffer layer be aluminium oxide, magnesia,
One of lithium fluoride, graphene oxide, self assembly cobalt nano material, two or more；Its thickness can be 1-10nm, example
For example 1-3nm；
Preferably, the ferromagnetic top electrode be one of cobalt, iron, nickel, two or more；
Preferably, the protection against oxidation layer can be one or both of gold, aluminium；Its thickness can be 5-300nm, such as
For 20-200nm.
6. the preparation method of organic single-crystal Spin Valve as described in any one in claim 1-5, including walk as follows poly-:
1) ferromagnetic hearth electrode is constructed using mask plate；
2) organic semiconductor monocrystal micro/nano material is transferred on the ferromagnetic hearth electrode that step 1) obtains；
3) buffer layer is constructed using mask plate；
4) it keeps the mask plate of step 3) constant, buffer layer is handled；
5) it keeps the mask plate of step 4) constant, constructs ferromagnetic top electrode and protection against oxidation layer, obtain the organic single-crystal certainly
Stopcock.
7. preparation method as claimed in claim 6, in step 1), the mask plate can be patterned metal foil；
In step 1), constructing ferromagnetic hearth electrode can be using direct current opposite direction target material magnetic sputtering technology, such as by mask plate and serves as a contrast
Bottom material is put into direct current opposite direction target material magnetic sputtering cavity after fixing and prepares ferromagnetic hearth electrode；
It, can be micro- using mechanical probes platform and high power light when shifting organic semiconductor monocrystal micro/nano material in step 2)
Mirror.
8. preparation method as claimed in claims 6 or 7, step 3) -5) in, the mask plate be patterned metal foil or
Kapton；
Step 3) -5) in, building buffer layer, ferromagnetic top electrode and protection against oxidation layer can be using template thermal evaporation skills in situ
Art.
9. following steps can be used such as the described in any item preparation methods of claim 6-8:
A1) pattern metal mask plate: the metal mask version of customization reasonable size as needed, patterning size determine lanthanum
The size of strontium manganese oxygen (LSMO) ferromagnetic hearth electrode；
A2) the preparation of lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode: the metal mask version that will be patterned into and strontium titanates (STO) substrate are solid
It sets, is put into direct current facing targets sputtering cavity, underlayer temperature is maintained at 700-800 DEG C in growth course, and pressure is about in cavity
For 0.5-1.0Pa, carrier gas is ratio Ar:O2The gaseous mixture of=5:3；Lanthanum strontium manganese oxygen (LSMO) ferromagnetic electrode extension of 100nm thickness
After the completion of growth, the pure O in situ in 3KPa2In atmosphere, kept for 1-5 hour of 700-800 DEG C of annealing, then with the speed of 5K/min
Degree is down to room temperature taking-up；
A3 the transfer of) 2,6 hexichol anthracene single crystals: at probe station (Micromanipulator 6150probe station), lead to
High-resolution optical microscopy (400-1000 times) is crossed, the probe for being about 1 μm by syringe needle thickness is logical by 2,6 hexichol anthracene single crystals
Van der Waals force transfer is crossed, step a2 is lain against) on obtained lanthanum strontium manganese oxygen (LSMO) ferromagnetic hearth electrode；
A4) the preparation of buffer layer: the metal or polyimide mask version that will be patterned into and the lanthanum strontium manganese oxygen for having shifted monocrystalline
(LSMO) ferromagnetic hearth electrode fixes, and passes through the aluminium of vacuum coating equipment thermal evaporation 1-3nm on monocrystalline；Then it is placed in oxygen plasma
AlOx buffer layer is obtained after aoxidizing 1-2 hours in body generator；
A5 buffer layer obtained by step a4)) the preparation of ferro-cobalt magnetopause electrode: is again placed in vacuum coating equipment side on the buffer layer
The ferro-cobalt magnetopause electrode of thermal evaporation 5-30nm and the gold of 20-200nm obtain sectional area and are about 100- as protection against oxidation layer
500 μm, wide about 500 μm of 2,6 hexichol anthracene single crystal Spin Valves.
10. the purposes of organic single-crystal Spin Valve as described in any one in claim 1-5, can be used for preparing magnetic memory device, magnetic
Sensor etc..
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| CN113257993A (en) * | 2020-02-10 | 2021-08-13 | 天津大学 | Organic semiconductor magnetoresistive device with carbon film protective layer and preparation method and application thereof |
| CN113921741A (en) * | 2021-11-24 | 2022-01-11 | 苏州大学 | Organic single crystal electroluminescent device, preparation method and polarized light signal emitting device |
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| CN113921741A (en) * | 2021-11-24 | 2022-01-11 | 苏州大学 | Organic single crystal electroluminescent device, preparation method and polarized light signal emitting device |
| CN113921741B (en) * | 2021-11-24 | 2024-01-26 | 苏州大学 | Organic single crystal electroluminescent device, preparation method and polarized light signal emitting device |
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