CN110061128B - Magnetic tunnel junction forming method and magneto-resistive random access memory - Google Patents
Magnetic tunnel junction forming method and magneto-resistive random access memory Download PDFInfo
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- CN110061128B CN110061128B CN201910420330.9A CN201910420330A CN110061128B CN 110061128 B CN110061128 B CN 110061128B CN 201910420330 A CN201910420330 A CN 201910420330A CN 110061128 B CN110061128 B CN 110061128B
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Abstract
The application discloses a method for forming a magnetic tunnel junction, comprising the following steps: providing a substrate, wherein a bottom electrode is formed on the substrate, a magnetic tunnel junction is formed on the bottom electrode, the magnetic tunnel junction comprises a first magnetic layer, a tunneling layer and a second magnetic layer which are sequentially laminated from bottom to top, the first magnetic layer and the second magnetic layer have perpendicular anisotropies, when current from the second magnetic layer to the first magnetic layer exists, the magnetic moment direction of the second magnetic layer is the same as that of the first magnetic layer, when the current direction is opposite, the magnetic moment direction of the second magnetic layer is opposite to that of the first magnetic layer, ferromagnetic particles are injected at the junction of the tunneling layer and the first magnetic layer, and the magnetic moment direction of the ferromagnetic particles is the same as that of the first magnetic layer. The method improves the tunneling magnetoresistance ratio of the magnetic tunnel junction, and does not change the property of the magnetic layer, so that other magneto-electric parameters of the tunnel junction are not negatively influenced. The application also discloses a magnetoresistive random access memory.
Description
Technical Field
The present disclosure relates to the field of semiconductors, and more particularly, to a method for forming a magnetic tunnel junction and a magnetoresistive random access memory.
Background
With the development of memory technology, a magnetoresistive random access memory (MRAM, magnetoresistive Random Access Memory) based on magnetic tunnel junctions (Magnetic Tunnel Junction, MTJ) is widely used, which may be independent of or integrated with devices using the memory, such as a processor, an application specific integrated circuit, or a system on a chip.
The core structure of the MRAM is an MTJ, and the tunneling magnetoresistance ratio (Tunnel Magneto Resistance, TMR) of the MTJ determines the read window of the MRAM, thereby affecting the read efficiency of the MRAM. Based on this, how to improve the TMR of MTJ is one of the research hotspots in the MRAM field.
In the MTJ structure of CoFeB/magnesia MgO/CoFeB/its TMR depends on the interfacial properties of CoFeB and MgO, which system would theoretically be infinite when CoFeB and MgO are perfect body-centered cubic structures. Due to the problems of film growth, etching process, etc., the structure of the MTJ is often defective, and thus, additional auxiliary processes such as adjusting the thickness of the MTJ tunneling layer and high temperature annealing are required to optimize the MTJ.
However, as the thickness of the tunneling layer increases, the Resistive Area (RA) of the MTJ also increases, which will affect the MTJ electrical performance.
Disclosure of Invention
In view of this, the present application provides a method for forming a magnetic tunnel junction, which injects ferromagnetic particles in the same magnetic moment direction as the first magnetic layer into the tunneling layer, and makes the spin direction of some tunneling electrons directionally flipped through spin flipping effect, so as to improve the spin polarizability of the tunnel junction, thereby realizing the improvement of the tunnel junction TMR without changing the properties of the magnetic layer, and thus, without negatively affecting other magneto-electric parameters of the magnetic tunnel junction. Correspondingly, the application also provides a magneto-resistive random access memory.
In one aspect, the present application provides a method for forming a magnetic tunnel junction, including:
providing a substrate, wherein the substrate is formed with a bottom electrode;
forming a magnetic tunnel junction on the bottom electrode, wherein the magnetic tunnel junction comprises a first magnetic layer, a tunneling layer and a second magnetic layer which are sequentially laminated from bottom to top, the first magnetic layer and the second magnetic layer have vertical anisotropies, when current from the second magnetic layer to the first magnetic layer exists, the magnetic moment direction of the second magnetic layer is the same as the magnetic moment direction of the first magnetic layer, and when current from the first magnetic layer to the second magnetic layer exists, the magnetic moment direction of the second magnetic layer is opposite to the magnetic moment direction of the first magnetic layer;
and ferromagnetic particles are injected into the junction between the tunneling layer and the first magnetic layer, and the magnetic moment direction of the ferromagnetic particles is the same as that of the first magnetic layer.
Optionally, the forming a magnetic tunnel junction on the bottom electrode includes:
sequentially growing each material layer of the magnetic tunnel junction;
patterning the material layers of the magnetic tunnel junction to form a magnetic tunnel junction;
before patterning, or after patterning, further comprises:
the ferromagnetic particles are implanted into the tunneling layer.
Optionally, the forming a magnetic tunnel junction on the bottom electrode includes:
sequentially growing a first magnetic layer of the magnetic tunnel junction and a material layer of the tunneling layer;
implanting the ferromagnetic particles into a material layer of the tunneling layer;
performing growth of a material layer of a second magnetic layer of the magnetic tunnel junction;
patterning of the material layers of the magnetic tunnel junction is performed to form the magnetic tunnel junction.
Optionally, the ferromagnetic particles comprise any one or more of iron, cobalt, and nickel.
Optionally, the magnetic tunnel junction further comprises: a pinned layer under the first magnetic layer and a protective layer over the second magnetic layer.
Optionally, the first magnetic layer, the tunneling layer, and the second magnetic layer are formed by:
magnetron sputtering, molecular beam epitaxy, or pulsed laser deposition.
Optionally, the magnetic tunnel junction is annealed by means of a strong magnetic field annealing.
In one aspect, the present application provides a magnetoresistive random access memory, including:
a substrate;
a bottom electrode over the substrate;
a magnetic tunnel junction over the bottom electrode, the magnetic tunnel junction comprising a first magnetic layer, a tunneling layer, and a second magnetic layer stacked in order from bottom to top, the first magnetic layer and the second magnetic layer having perpendicular anisotropy, a magnetic moment direction of the second magnetic layer being the same as a magnetic moment direction of the first magnetic layer when a current from the second magnetic layer to the first magnetic layer is present, the magnetic moment direction of the second magnetic layer being opposite to the magnetic moment direction of the first magnetic layer when a current from the first magnetic layer to the second magnetic layer is present;
and ferromagnetic particles are arranged at the junction of the tunneling layer and the first magnetic layer, and the magnetic moment direction of the ferromagnetic particles is the same as that of the first magnetic layer.
Optionally, the ferromagnetic particles comprise any one or more of iron, cobalt, and nickel.
Optionally, the magnetic tunnel junction further comprises: a pinned layer under the first magnetic layer and a protective layer over the second magnetic layer.
From the above technical solutions, the embodiments of the present application have the following advantages:
the embodiment of the application provides a method for forming a magnetic tunnel junction, which comprises the steps of providing a substrate, forming a bottom electrode on the substrate, forming the magnetic tunnel junction on the bottom electrode, and sequentially stacking a first magnetic layer, a tunneling layer and a second magnetic layer from bottom to top, wherein ferromagnetic particles are injected into the tunneling layer at the junction with the first magnetic layer, the magnetic moment direction of the ferromagnetic particles is the same as the magnetic moment direction of the first magnetic layer, electrons with spin opposite to the magnetic moment of the ferromagnetic particles have a certain probability of causing the spin of the electrons to be turned to the same direction as the magnetic moment of the ferromagnetic particles through spin-turning effect, so that the spin polarization rate of the tunnel junction is improved, the tunneling magnetoresistance ratio of the magnetic tunnel junction is improved, the properties of the magnetic layers are not changed, and other magneto-electric parameters of the tunnel junction are not negatively influenced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 illustrates a flow chart of a method of forming a magnetic tunnel junction provided by an embodiment of the present application;
FIGS. 2A-2B are schematic structural diagrams corresponding to a series of processes of a method for forming a magnetic tunnel junction according to an embodiment of the present disclosure;
FIG. 3 illustrates a schematic diagram of spin-dependent band tunneling without injection of a tunneling layer in an embodiment of the present application;
FIG. 4 shows a schematic diagram of spin-dependent band tunneling when a tunneling layer is injected with ferromagnetic particles in an embodiment of the present application;
fig. 5 shows a schematic structural diagram of a magnetoresistive random access memory according to an embodiment of the application.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
In the following detailed description of the embodiments of the present invention, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration only, and in which is shown by way of illustration only, and in which the scope of the invention is not limited for ease of illustration. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various examples and/or arrangements discussed.
Aiming at the problem that increasing the tunneling layer thickness of the MTJ to improve TMR at present causes negative influence on other magneto-electric parameters such as RA which influence the MTJ and further influence the electrical performance of the MTJ, the application provides a method for injecting ferromagnetic particles into the junction between the tunneling layer of the MTJ and a first magnetic layer, so that electrons with spin opposite to the magnetic moment of the ferromagnetic particles have a certain probability to spin and overturn to the direction same as the magnetic moment of the ferromagnetic particles through spin-overturning effect, and the spin polarization rate of a tunnel junction is improved, thereby improving the TMR of the MTJ.
In order to make the technical solution of the present application clearer and easier to understand, the method for forming the magnetic tunnel junction of the present application will be described below with reference to specific embodiments.
Fig. 1 is a flowchart of a method for forming a magnetic tunnel junction according to an embodiment of the present application, and fig. 2A to 2B are schematic structural diagrams corresponding to a series of processes of the method for forming a magnetic tunnel junction according to an embodiment of the present application, and referring to fig. 1 and fig. 2A to 2B, the method includes:
s101: providing a substrate 10, wherein the substrate 10 is formed with a bottom electrode 20;
s102: forming a magnetic tunnel junction 30 on the bottom electrode 20, wherein the magnetic tunnel junction 30 comprises a first magnetic layer 31, a tunneling layer 32 and a second magnetic layer 33 which are sequentially stacked from bottom to top, the first magnetic layer 31 and the second magnetic layer 33 have perpendicular anisotropies, when a current from the second magnetic layer 33 to the first magnetic layer 31 exists, the magnetic moment direction of the second magnetic layer 33 is the same as the magnetic moment direction of the first magnetic layer 31, and when a current from the first magnetic layer 31 to the second magnetic layer 33 exists, the magnetic moment direction of the second magnetic layer 33 is opposite to the magnetic moment direction of the first magnetic layer 31;
wherein ferromagnetic particles 34 are injected into the junction between the tunneling layer 32 and the first magnetic layer 31, and the magnetic moment direction of the ferromagnetic particles 34 is the same as the magnetic moment direction of the first magnetic layer 31.
In the embodiment of the present application, the first magnetic layer 31 and the second magnetic layer 33 are formed of a ferromagnetic material having perpendicular anisotropy, and the ferromagnetic material may be an elemental ferromagnetic material, an alloy ferromagnetic material, a metal compound having magnetic properties, or the like, and may be a soft magnetic material such as Co, fe, ni, coFeB or Heusler alloy. The first magnetic layer 31 and the second magnetic layer 33 may be of the same or different materials, depending on the particular needs.
Wherein the first magnetic layer 31 may also be referred to as a reference layer and the second magnetic layer 33 may also be referred to as a free layer. Tunneling layer 32 may also be referred to as a barrier layer, and may generally be formed of a metal oxide, as one example, tunneling layer 32 may be magnesium oxide, mgO.
It will be appreciated that the magnetic moment direction of the first magnetic layer 31 may be vertically upward, i.e. perpendicular to the tunneling layer 32, and facing the tunneling layer 32, while the magnetic moment direction of the second magnetic layer 33 is variable, which varies with the direction of the current between the first magnetic layer 31 and the second magnetic layer 33, and when the current direction is from the second magnetic layer 33 to the first magnetic layer 31, the magnetic moment direction of the second magnetic layer 33 is the same as the first magnetic layer 31, i.e. vertically upward, facing away from the tunneling layer 32, and when the current direction is from the first magnetic layer 31 to the second magnetic layer 33, the magnetic moment direction of the second magnetic layer 33 is opposite to the first magnetic layer 31, also referred to as antiparallel, i.e. vertically downward, facing the tunneling layer 32.
In the structure shown in fig. 2B, electrons in the magnetic tunnel junction 30 that spin opposite to the magnetic moment of the ferromagnetic particles 34 have a certain probability to flip their spin to the same direction as the magnetic moment of the ferromagnetic particles by the spin-flip effect, thereby improving the TMR of the magnetic tunnel junction 30. The principle thereof will be described below.
The Spin flip effect, that is, spin-flip effect, means that when electrons pass through ferromagnetic particles, if the Spin of the electrons is the same as the Spin direction of the ferromagnetic particles, the Spin direction of the electrons is unchanged; conversely, electrons interact with the ferromagnetic particles by exchange, causing the spin of the electrons to flip with a certain probability into the same direction as the ferromagnetic particles.
The turnover probability of the electrons is as follows:
wherein S is the total spin quantum number of the ferromagnetic particles, J is the exchange action constant of the ferromagnetic particles and electrons, w is the spin exchange energy of the electrons and the ferromagnetic particles, and t is the action time.
Next, TMR of the magnetic tunnel junction without injection of ferromagnetic particles into the tunneling layer will be described with reference to the accompanying drawings.
Fig. 3 is a schematic diagram of band tunneling in which the tunneling layer is spin-dependent when no injection is performed, where a is a schematic diagram of band tunneling in the case where the second magnetic layer 33 and the first magnetic layer 31 have the same magnetic moment direction, B is a schematic diagram of band tunneling in the case where the second magnetic layer 33 and the first magnetic layer 31 have opposite magnetic moment direction, where 301 and 302 represent spin-down bands, 303 and 304 represent spin-up bands, as shown by arrows in the figure, 305 is the state density of spin-multiple, and 306 is the state density of spin-minority, where it is assumed that the spin state densities of the first magnetic layer and the second magnetic layer are the same for the sake of calculation.
When the tunneling layer 32 is free of ferromagnetic particles, electron tunneling of the magnetic tunnel junction satisfies spin conservation, i.e., the spin direction is unchanged before and after electron tunneling.
When the magnetic moment direction of the second magnetic layer 33 is the same as that of the first magnetic layer 31, the tunneling conductance is:
σ P ＝P*P+Q*Q(2)
when the magnetic moment direction of the second magnetic layer 33 is opposite to that of the first magnetic layer 31, the tunneling conductance is:
σ AP ＝2P*Q(3)
in this case, the TMR of the magnetic tunnel junction is:
TMR＝(σ P -σ AP )/σ AP ＝(P-Q) 2 /2P*Q(4)
fig. 4 is a schematic diagram of band tunneling when the tunneling layer injects ferromagnetic particles, where a is a schematic diagram of band tunneling when the second magnetic layer 33 and the first magnetic layer 31 have the same magnetic moment direction, B is a schematic diagram of band tunneling when the second magnetic layer 33 and the first magnetic layer 31 have opposite magnetic moment directions, 401 and 402 represent bands with spin down, 403 and 404 represent bands with spin up, as shown by arrows in the figure, 405, i.e., P represents the state density of spin protons, and 406, i.e., Q represents the state density of spin minority carriers.
When ferromagnetic particles are injected into the tunneling layer 32, electron tunneling of the tunnel junction does not satisfy spin conservation, and electrons with spin opposite to the magnetic moment of the ferromagnetic particles are turned over by spin-flip effect to the same direction as the magnetic moment of the ferromagnetic particles, and the turn-over probability is assumed to be m.
The tunneling conductance of the second magnetic layer 33 is the same as the magnetic moment of the first magnetic layer 31:
σ P ＝P*P+Q*Q*(1-m)+m*P*Q(5)
when the magnetic moment direction of the second magnetic layer 33 is opposite to that of the first magnetic layer 31, the tunneling conductance is:
σ AP ＝2P*Q+Q*Q*m-m*P*Q(6)
in this case, the TMR of the magnetic tunnel junction is:
as can be seen from a comparison of equation (4) and equation (7), the TMR of the magnetic tunnel junction increases significantly after the injection of ferromagnetic particles. Moreover, since the thickness of the magnetic tunnel junction is not increased, the RA of the magnetic tunnel junction is not increased, and other magneto-electric parameters of the magnetic tunnel junction are not negatively affected.
For S102, the magnetic tunnel junction 30 is formed on the bottom electrode 20, and two implementations are provided in the embodiments of the present application, which will be described below.
One implementation is to sequentially grow the material layers of the magnetic tunnel junction 30 and then pattern the material layers of the magnetic tunnel junction 30 to form the magnetic tunnel junction 30. Patterning can be achieved primarily by photolithography. Wherein the ferromagnetic particles 34 may also be implanted into the tunneling layer 32 before patterning, or after patterning. Clearly, after patterning, the area of the tunneling layer 32 is reduced, so that the implantation amount of the ferromagnetic particles 34 can be reduced, with higher implantation efficiency.
In another implementation, the growth of the first magnetic layer 31 of the magnetic tunnel junction 30 and the material layer of the tunneling layer 32 are sequentially performed, the ferromagnetic particles 34 are injected into the material layer of the tunneling layer 32, the growth of the material layer of the second magnetic layer 33 of the magnetic tunnel junction 30 is performed, and the patterning of each material layer of the magnetic tunnel junction 30 is performed to form the magnetic tunnel junction 30.
In the two implementations, the thickness through which the ferromagnetic particles 34 are injected into the tunneling layer 32 is different, in the first implementation, the ferromagnetic particles 34 penetrate through the second magnetic layer 33 and the tunneling layer 32, and reside in the tunneling layer 32 at the junction with the first magnetic layer 31, and in the second implementation, the ferromagnetic particles 34 penetrate through the tunneling layer 32, and reside in the tunneling layer 32 at the junction with the first magnetic layer 31. The energies of the ferromagnetic particles 34 are different in view of the thickness.
The ferromagnetic particles 34 are injected after the tunneling layer 32 is formed, so that the influence of the ferromagnetic particles on the lattice structure can be further reduced to a smaller extent, and the influence on the overall magneto-electric performance of the magnetic tunnel junction is avoided.
In practical applications, the first magnetic layer 31, the tunneling layer 32, and the second magnetic layer 33 may be formed using any one of magnetron sputtering, molecular beam epitaxy (Molecular Beam Epitaxy, MBE), or pulsed laser deposition (Pulsed Laser Deposition, PLD).
The ferromagnetic particles 34 injected into the tunneling layer 32 may be any particles having ferromagnetic properties. In some possible implementations, the ferromagnetic particles 34 may be implemented with any one or more of iron Fe, cobalt Co, and nickel Ni. These particles can be provided by conventional injection equipment, are compatible with existing equipment and processes, and do not require increased processing costs.
It will be appreciated that lattice defects will generally be created after injection of the ferromagnetic particles, while the spin direction of the ferromagnetic particles is disordered. For this purpose, it is also necessary to anneal the magnetic tunnel junction to eliminate lattice defects and magnetize the ferromagnetic particles so that their spin directions are ordered, in particular the same direction as the magnetic moment of the first reference layer. As an example, the annealing may be performed by means of strong magnetic field annealing.
Further, a pinning layer may be disposed under the first magnetic layer 31, and the pinning layer may be made of (Co/Pt), for example n Multilayer films are artificial antiferromagnetics, etc., to fix the magnetic moment of the reference layer.
In view of the risk of oxidation of the magnetic layer, a protective layer may also be formed on the second magnetic layer 33 in practical use to prevent the second magnetic layer 33 from being oxidized. The protective layer may be a metal material, such as Ta, ru, or the like.
The method for forming the magnetic tunnel junction according to the embodiment of the present application is described in detail above, and in addition, the present application further provides a magnetoresistive random access memory formed by the method for forming the magnetic tunnel junction, as shown in fig. 5, the magnetoresistive random access memory includes:
a substrate 501;
a bottom electrode 502 located over the substrate;
a magnetic tunnel junction 503 located above the bottom electrode 502, the magnetic tunnel junction 503 comprising a first magnetic layer 504, a tunneling layer 505, and a second magnetic layer 506 stacked in this order from bottom to top, the first magnetic layer 504 and the second magnetic layer 506 having perpendicular anisotropies, a magnetic moment direction of the second magnetic layer 506 being the same as a magnetic moment direction of the first magnetic layer 504 when a current from the second magnetic layer 506 to the first magnetic layer 504 is present, and a magnetic moment direction of the second magnetic layer 506 being opposite to a magnetic moment direction of the first magnetic layer 504 when a current from the first magnetic layer 504 to the second magnetic layer 506 is present;
wherein ferromagnetic particles 507 are disposed at the junction of the tunneling layer 505 and the first magnetic layer 504, and the magnetic moment direction of the ferromagnetic particles 507 is the same as the magnetic moment direction of the first magnetic layer 504.
Optionally, the ferromagnetic particles comprise any one or more of iron, cobalt, and nickel.
Further, the magnetic tunnel junction 503 further includes: a pinned layer 508 under the first magnetic layer 504 and a protective layer 509 over the second magnetic layer 506. In some possible implementations, a dielectric isolation layer may also be created and opened in the dielectric isolation layer, filling with metal to form the top electrode.
In a specific application, the MRAM described above may be arranged in an array form, forming a memory array of the MRAM, which may be independent or integrated in a device, such as a processor, an application specific integrated circuit or a system on a chip, etc., using the MRAM memory array.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for embodiments of the device structure, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of portions of the method embodiments where relevant.
The foregoing is merely a preferred embodiment of the present invention, and the present invention has been disclosed in the above description of the preferred embodiment, but is not limited thereto. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present invention or modifications to equivalent embodiments using the methods and technical contents disclosed above, without departing from the scope of the technical solution of the present invention. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention still fall within the scope of the technical solution of the present invention.
Claims (8)
1. A method of forming a magnetic tunnel junction, comprising:
providing a substrate, wherein the substrate is formed with a bottom electrode;
forming a magnetic tunnel junction on the bottom electrode, wherein the magnetic tunnel junction comprises a first magnetic layer, a tunneling layer and a second magnetic layer which are sequentially laminated from bottom to top, the first magnetic layer and the second magnetic layer have vertical anisotropies, when current from the second magnetic layer to the first magnetic layer exists, the magnetic moment direction of the second magnetic layer is the same as the magnetic moment direction of the first magnetic layer, and when current from the first magnetic layer to the second magnetic layer exists, the magnetic moment direction of the second magnetic layer is opposite to the magnetic moment direction of the first magnetic layer; the first magnetic layer is a reference layer, and the second magnetic layer is a free layer;
ferromagnetic particles are injected into the junction between the tunneling layer and the first magnetic layer, and the magnetic moment direction of the ferromagnetic particles is the same as that of the first magnetic layer;
the forming a magnetic tunnel junction on the bottom electrode includes:
sequentially growing each material layer of the magnetic tunnel junction;
patterning the material layers of the magnetic tunnel junction to form a magnetic tunnel junction;
before patterning, or after patterning, further comprises:
implanting the ferromagnetic particles into the tunneling layer;
or, the forming a magnetic tunnel junction on the bottom electrode includes:
sequentially growing a first magnetic layer of the magnetic tunnel junction and a material layer of the tunneling layer;
implanting the ferromagnetic particles into a material layer of the tunneling layer;
performing growth of a material layer of a second magnetic layer of the magnetic tunnel junction;
patterning of the material layers of the magnetic tunnel junction is performed to form the magnetic tunnel junction.
2. The method of claim 1, wherein the ferromagnetic particles comprise any one or more of iron, cobalt, and nickel.
3. The method of claim 1, wherein the magnetic tunnel junction further comprises: a pinned layer under the first magnetic layer and a protective layer over the second magnetic layer.
4. The method of claim 1, wherein the first magnetic layer, the tunneling layer, and the second magnetic layer are formed by:
magnetron sputtering, molecular beam epitaxy, or pulsed laser deposition.
5. The method of claim 1, wherein the magnetic tunnel junction is annealed by means of a strong magnetic field anneal.
6. A magnetoresistive random access memory, comprising:
a substrate;
a bottom electrode over the substrate;
a magnetic tunnel junction over the bottom electrode, the magnetic tunnel junction comprising a first magnetic layer, a tunneling layer, and a second magnetic layer stacked in order from bottom to top, the first magnetic layer and the second magnetic layer having perpendicular anisotropy, a magnetic moment direction of the second magnetic layer being the same as a magnetic moment direction of the first magnetic layer when a current from the second magnetic layer to the first magnetic layer is present, the magnetic moment direction of the second magnetic layer being opposite to the magnetic moment direction of the first magnetic layer when a current from the first magnetic layer to the second magnetic layer is present; the first magnetic layer is a reference layer, and the second magnetic layer is a free layer;
and ferromagnetic particles are arranged at the junction of the tunneling layer and the first magnetic layer, and the magnetic moment direction of the ferromagnetic particles is the same as that of the first magnetic layer.
7. The memory of claim 6, wherein the ferromagnetic particles comprise any one or more of iron, cobalt, and nickel.
8. The memory of claim 6 wherein the magnetic tunnel junction further comprises: a pinned layer under the first magnetic layer and a protective layer over the second magnetic layer.
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| US7001680B2 (en) * | 2003-07-29 | 2006-02-21 | Hitachi Global Storage Tech Nl | Low resistance magnetic tunnel junction structure |
| US9024398B2 (en) * | 2010-12-10 | 2015-05-05 | Avalanche Technology, Inc. | Perpendicular STTMRAM device with balanced reference layer |
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