CN110047892A - White organic LED display - Google Patents
White organic LED display Download PDFInfo
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- CN110047892A CN110047892A CN201910321438.2A CN201910321438A CN110047892A CN 110047892 A CN110047892 A CN 110047892A CN 201910321438 A CN201910321438 A CN 201910321438A CN 110047892 A CN110047892 A CN 110047892A
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- organic led
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- transparency conducting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application provides a kind of white organic LED display, by the luminous zone that transparent storage capacitance is placed in white organic LED display storage capacitance is taken up space and space coincidence shared by luminous zone, to reduce arrangement space occupied by single pixel, make large-sized white organic LED display that there are high-res.
Description
Technical field
This application involves field of display technology more particularly to white organic LED displays.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) has self-luminous, and high color is full
The advantages that with degree and high contrast is the core of next-generation flat panel display and flexible display technologies.
For the true color for realizing OLED display, a kind of mode is by white OLED (White
Organic Light Emitting Diode, WOLED) and colorized optical filtering (Color Filter, CF) stacking Calais's realization.Its
In, WOLED and CF layers of overlaying structure do not need accurately masking process, so that it may the high-resolution for realizing OLED display, because
This WOLED display device is widely recognized as the focus of next-generation display technology.However, making large scale and there are high-res
WOLED panel be one of main developing direction of organic light emitting diode display, realize the high-res requirement pair of WOLED
The space layout design of pixel is put forward higher requirements.
Summary of the invention
The application's is designed to provide a kind of white organic LED display, the white organic LED
Display has high-res.
To achieve the above object, technical solution is as follows.
A kind of white organic LED display, the white organic LED display include:
One substrate, the substrate have luminous zone and the non-light-emitting area positioned at the luminous zone periphery；
Thin film transistor (TFT), the thin film transistor (TFT) are located at the non-light-emitting area of the substrate, and the thin film transistor (TFT) includes shape
Grid on substrate described in Cheng Yu, the first oxide semiconductor pattern formed right above Yu Suoshu grid and with described first
The source-drain electrode of oxide semiconductor pattern electrical connection；And
Transparent storage capacitance, the transparent storage capacitance are located at the luminous zone of the substrate, the transparent storage capacitance packet
Include the first transparency conducting layer and the second transparency conducting layer.
In above-mentioned white organic LED display, first transparency conducting layer is by by the second oxide
It is formed after semiconductor pattern conductor, second oxide semiconductor pattern passes through with first oxide semiconductor pattern
Same processing procedure is formed.
In above-mentioned white organic LED display, second transparency conducting layer, which is located at described first, transparent is led
The top of electric layer.
In above-mentioned white organic LED display, second transparency conducting layer and the drain electrode or/and
The first oxide semiconductor pattern electrical connection.
In above-mentioned white organic LED display, the source-drain electrode and second transparency conducting layer are logical
It crosses and is formed using same half-tone mask and same yellow light process.
In above-mentioned white organic LED display, the transparent storage capacitance further includes third electrically conducting transparent
Layer, the third transparency conducting layer and the grid same layer are arranged.
In above-mentioned white organic LED display, second transparency conducting layer is set with the grid same layer
It sets.
In above-mentioned white organic LED display, second transparency conducting layer is electrically connected with the grid.
In above-mentioned white organic LED display, the white organic LED display further includes hair
Optical device and color film layer, the luminescent device are located at the surface of the transparent storage capacitance, and the coloured silk film layer is located at photophore
Between part and the transparent storage capacitance.
The utility model has the advantages that the application provides a kind of white organic LED display, by setting transparent storage capacitance
In the luminous zone of white organic LED display storage capacitance is taken up space and space coincidence shared by luminous zone, subtracts
Arrangement space occupied by small single pixel makes large-sized white organic LED display have high-res.
Detailed description of the invention
Figure 1A -1B is the structural schematic diagram of the white organic LED display of the embodiment of the present application 1；
Fig. 2 is the structural schematic diagram of the white organic LED display of the embodiment of the present application 2；
Fig. 3 is the structural schematic diagram of the white organic LED display of the embodiment of the present application 3.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall in the protection scope of this application.
The application provides a kind of white organic LED display, and white organic LED display includes:
One substrate, substrate have luminous zone and the non-light-emitting area positioned at luminous zone periphery；
Thin film transistor (TFT), thin film transistor (TFT) are located at the non-light-emitting area of substrate, and thin film transistor (TFT) includes being formed on substrate
It grid, the first oxide semiconductor pattern formed right above the grid and is electrically connected with the first oxide semiconductor pattern
Source-drain electrode；And
Transparent storage capacitance, transparent storage capacitance are located at the luminous zone of substrate, and transparent storage capacitance includes first transparent leading
Electric layer and the second transparency conducting layer.
The application to store by the luminous zone that transparent storage capacitance is placed in white organic LED display
Capacitor takes up space and space coincidence shared by luminous zone, reduces arrangement space occupied by single pixel, for the white of identical size
Light organic light emitting diode display, the application white organic LED display is relative to storage capacitance in traditional technology
The white organic LED display for being placed in non-light-emitting area can design more pixels to improve resolution.
Above scheme is described in detail below in conjunction with specific embodiment.
Embodiment 1
It as shown in Figure 1A, is the structural schematic diagram of the white organic LED display 10 of the embodiment of the present application 1.
White organic LED display 10 includes:
One substrate 11, substrate 11 have luminous zone 112 and the non-light-emitting area 111 positioned at 112 periphery of luminous zone；
Thin film transistor (TFT), thin film transistor (TFT) are located at the non-light-emitting area 111 of substrate 11, and thin film transistor (TFT) includes being formed in substrate
It grid 12 on 11, the first oxide semiconductor pattern 131 formed right above grid 12 and is partly led with the first oxide
The source-drain electrode 15 that body pattern 131 is electrically connected；And
Transparent storage capacitance, transparent storage capacitance are located at the luminous zone 112 of substrate 11, and transparent storage capacitance includes first saturating
Bright conductive layer 132 and the second transparency conducting layer 14.
In the present embodiment, thin film transistor (TFT) is used as search switch, and thin film transistor (TFT) is bottom gate thin film transistor
(Thin Film Transmitter, TFT) comprising grid 12, the first oxide semiconductor pattern 131 and source-drain electrode
15, drain electrode 152 is to be electrically connected by the second transparency conducting layer 14 with the first oxide semiconductor pattern 131, and source electrode 151 is
It is electrically connected by the transparency conducting layer contacted immediately below it with the first oxide semiconductor pattern 131, the second transparency conducting layer 14
With mutually insulated immediately below source electrode 151 and between the transparency conducting layer that is contacted with source electrode 151.First oxide semiconductor figure
The material for preparing of case 131 includes but is not limited to indium gallium zinc (IGZO), indium oxide zinc-tin (IZTO), zinc oxide (ZnO), oxidation
Indium zinc (IZO), indium oxide (InO) and tin oxide (SnO).Grid 12 with a thickness of 2000 angstroms -3000 angstroms, grid 12 prepares material
Material is at least one of molybdenum, aluminium, titanium and copper or other metal materials, source-drain electrode 15 prepare material be molybdenum, aluminium,
At least one of titanium and copper or other metal materials.
In the present embodiment, transparent storage capacitance be used for store addressing during input pixel unit image data voltage with
Maintain continuous illumination of the pixel unit within the frame period.Transparent storage capacitance includes that the first transparency conducting layer 132 and second is saturating
Bright conductive layer 14.
First transparency conducting layer 132 is arranged with 131 same layer of the first oxide semiconductor pattern, the first transparency conducting layer
132 are formed on the gate insulating layer 16 of luminous zone 112, and the first transparency conducting layer 132 is by by the second oxide semiconductor
Patterned conductor is formed, and the second oxide semiconductor pattern is formed with the first oxide semiconductor pattern 131 by same processing procedure.
The method for making the second oxide semiconductor pattern conductor includes but is not limited to corona treatment mode, ion implanting and purple
Outer photo-irradiation treatment.The material for preparing of second oxide semiconductor pattern includes but is not limited to IGZO, IZTO, ZnO, IZO, InO
And SnO.For the transmission of necessary signal, the first transparency conducting layer 132 needs are electrically connected with conductive layer, which can
Think grid, scan line, metal layer or other conductive layers with grid same layer.
Second transparency conducting layer 14 is located at the top of the first transparency conducting layer 132 and is formed on interlayer insulating film 17.The
Two transparency conducting layers 14 are indium tin oxide layer or IZO layer.In order to input necessary signal to the second transparency conducting layer 14,
Second transparency conducting layer 14 extends to non-light-emitting area 112 from luminous zone 111, the second transparency conducting layer 14 and drain electrode 152 or/and
The electrical connection of first oxide semiconductor pattern 131.Specifically in the present embodiment, the second transparency conducting layer 14 and drain electrode 152 and
First oxide semiconductor pattern 131 is electrically connected.In order to simplify manufacturing process, source-drain electrode 15 and the second transparency conducting layer 14
It is to be formed by using same half-tone mask and same yellow light process.Specifically, pass through the successively shape on interlayer insulating film 17
It is metal layer and transparency conducting layer figure at metal layer and transparency conducting layer, then by same intermediate tone mask and same yellow light process
Case is to be formed simultaneously source-drain electrode 15 and the second transparency conducting layer 14.
In the present embodiment, white organic LED display 10 further includes gate insulating layer 16, gate insulating layer
16 for making to insulate between grid 12 and the first oxide semiconductor pattern 131, and gate insulating layer 16 covers grid 12 and hair
The material for preparing of the substrate 11 in light area 112, gate insulating layer 16 is one of silicon nitride, silica or silicon oxynitride, grid
Insulating layer 16 with a thickness of 1000 angstroms -2000 angstroms, the preparation method of gate insulating layer 16 includes but is not limited to chemical vapor deposition
(Chemical Vapor Deposition, CVD), plasma enhanced chemical vapor deposition (Plasma Enhanced
Chemical Vapor Deposition, PECVD), thermal chemical vapor deposition (Thermal Chemical Vapor
Deposition, TCVD) and atomic layer deposition (Atom Layer Depositon, ALD) etc..White organic LED
Display 10 further includes interlayer insulating film 17, and interlayer insulating film 17 covers the first transparency conducting layer 132 of luminous zone 112 and covers
First oxide semiconductor pattern 131 of non-light-emitting area 111 is used as the first transparency conducting layer 132 and the second transparency conducting layer
The etching barrier layer between insulating layer and source-drain electrode between 14, the material for preparing of interlayer insulating film 17 include but is not limited to
In silicon nitride, silica, silicon oxynitride, aluminium oxide, titanium dioxide and zirconium dioxide, interlayer insulating film 17 with a thickness of 5000
Angstroms -6000 angstroms.
White organic LED display 10 further includes planarization layer and pixel defining layer.Planarization layer coating
Between insulating layer 17, source-drain electrode 15, the second transparency conducting layer 14 and color film layer 19 so as to be formed with thin film transistor (TFT) and coloured silk
The surfacing of the substrate 11 of film layer 19.Pixel defining layer is formed on planarization layer and partial anode 181.Pixel definition
Setting is open to define luminous zone 112 above anode on layer.Planarization layer and pixel defining layer are organic layer transparent insulation
Layer.
White organic LED display 10 further includes luminescent device 18 and color film layer 19.Luminescent device 18 is located at
The surface of transparent storage capacitance.Color film layer 19 is between luminescent device 18 and transparent storage capacitance.Specifically, color film layer 19
It is formed on the second transparency conducting layer 14 of luminous zone 112.Luminescent device 18 includes anode 181, organic luminous layer 182 and yin
Pole 183, in order to improve aperture opening ratio, anode 181 is transparent electrode, and cathode 183 is reflective electrode, i.e. two pole of white-light organic light-emitting
Tube display 10 is bottom luminescence type display.The drain electrode 152 that anode 181 passes through via hole and thin film transistor (TFT) on planarization layer
The material for preparing of connection, anode is tin indium oxide or indium zinc oxide.The hole that is inputted by anode 181 and defeated by cathode 193
The electronics entered energy of compound generation in organic luminous layer 182 makes the organic material for forming organic luminous layer 182 be stimulated
And white light is issued, organic luminous layer 182 is formed in the surface of pixel defining layer and the opening of pixel defining layer, pixel definition
Organic luminous layer 182 in layer opening is contacted with anode 181.Cathode 183 covers organic luminous layer 182.Organic luminous layer 182 is used
In sending white light.Color film layer 19 includes red photoresist, green photoresist and blue light resistance, the white light that organic luminous layer 182 issues
Respectively by red photoresist, green photoresist and blue light resistance to issue feux rouges, green light and blue light.
It as shown in Figure 1B, is the knot of another improvement embodiment of white organic LED display 10 shown in Figure 1A
Structure schematic diagram.Relative to white organic LED display 10 shown in figure 1A, transparent storage capacitance further includes that third is saturating
Bright conductive layer 120, third transparency conducting layer 120 and 12 same layer of grid are arranged, third transparency conducting layer 120, the first electrically conducting transparent
The capacitor that layer 132 and the gate insulating layer 16 between third transparency conducting layer 120 and the first transparency conducting layer 132 are formed
It connects with the capacitor of the first transparency conducting layer 132, the second transparency conducting layer 14 and the formation of interlayer insulating film 17 between the two
To form transparent storage capacitance.Relative to the transparent storage capacitance in Figure 1A, the transparent storage capacitance in Figure 1B has bigger
Capacitor.
Embodiment 2
As shown in Fig. 2, its structural schematic diagram for the white organic LED display 20 of the embodiment of the present application 2.
White organic LED display 20 includes:
One substrate 21, substrate 21 have luminous zone 212 and the non-light-emitting area 211 positioned at 212 periphery of luminous zone；
Thin film transistor (TFT), thin film transistor (TFT) are located at the non-light-emitting area 211 of substrate 21, and thin film transistor (TFT) includes being formed in substrate
On grid 22, the first oxide semiconductor pattern 231 for being formed right above grid 22 and with the first oxide semiconductor
The source-drain electrode 25 that pattern 231 is electrically connected；And
Transparent storage capacitance, transparent storage capacitance are located at the luminous zone 212 of substrate 21, and transparent storage capacitance includes first saturating
Bright conductive layer 232 and the second transparency conducting layer 24.
In the present embodiment, the second transparency conducting layer 24 and the setting of 22 same layer of grid and the second transparency conducting layer 24 and grid
22 electrical connections.Second transparency conducting layer 24, gate insulating layer 26 and the first transparency conducting layer 232 form transparent storage capacitance.
The insulating layer of two conductive plates relative to the transparent storage capacitance in Figure 1A is interlayer insulating film, transparent in the present embodiment
Gate insulating layer 16 between two conductive plates of storage capacitance is thinner, and the capacitor (C) for being more advantageous to transparent storage capacitance becomes
Greatly.
In the present embodiment, anode 281, organic luminous layer 282 and the cathode 283 and first of luminescent device 28 are formed in fact
The luminescent device 18 applied in example is identical, is not detailed herein.Color film layer 29 is set on interlayer insulating film 27,251 He of source electrode
Drain electrode 252 is directly electrically connected with the first oxide semiconductor pattern 231 respectively.
Embodiment 3
As shown in figure 3, its structural schematic diagram for the white organic LED display 30 of the embodiment of the present application 3.
White organic LED display 30 includes:
One substrate 31, substrate 31 have luminous zone 312 and the non-light-emitting area 311 positioned at 312 periphery of luminous zone；
Thin film transistor (TFT), thin film transistor (TFT) are located at the non-light-emitting area 311 of substrate 31, and thin film transistor (TFT) includes being formed in substrate
On grid 32, the first oxide semiconductor pattern 331 for being formed right above grid 32 and with the first oxide semiconductor
The source-drain electrode 35 that pattern 331 is electrically connected；And
Transparent storage capacitance, transparent storage capacitance are located at the luminous zone 312 of substrate 31, and transparent storage capacitance includes first saturating
Bright conductive layer 332 and the second transparency conducting layer 34.
The present embodiment is substantially similar to white organic LED display shown in Figure 1A 10, the difference is that, thoroughly
Bright storage capacitance is by the second transparency conducting layer 34, the first transparency conducting layer 332 and to be located at the second transparency conducting layer 34 and the
Passivation layer 313 and interlayer insulating film 37 between one transparency conducting layer 332 form, and the second transparency conducting layer 34 passes through passivation layer
Via hole on 313 is electrically connected with drain electrode 352, relative to the transparent storage capacitance in Figure 1A, transparent storage electricity in the present embodiment
The capacitor of appearance becomes smaller.Passivation layer 313 be inorganic insulation layer, prepare material be silicon nitride, silica, silicon oxynitride, aluminium oxide,
One of titanium dioxide and zirconium dioxide, the preparation method of passivation layer 313 include but is not limited to CVD, PECVD, TCVD with
And ALD etc..In addition, source electrode 351 and drain electrode 352 are directly to be electrically connected with the first oxide semiconductor pattern 331.
Above-described embodiment 1-3 is by being placed in luminous zone for transparent storage capacitance so that luminous zone takes up space and storage capacitance
Shared space coincidence reduces the size of single pixel, greatly saving pixel layout space, so that white-light organic light-emitting two
Grade tube display has resolution.
The technical solution and its core concept for the application that the above embodiments are only used to help understand；This field
Those of ordinary skill is it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments or right
Part of technical characteristic is equivalently replaced；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution
The range of the technical solution of each embodiment of the application.
Claims (10)
1. a kind of white organic LED display, which is characterized in that the white organic LED display packet
It includes:
One substrate, the substrate have luminous zone and the non-light-emitting area positioned at the luminous zone periphery；
Thin film transistor (TFT), the thin film transistor (TFT) are located at the non-light-emitting area of the substrate, and the thin film transistor (TFT) includes being formed in
The first oxide semiconductor pattern and aoxidized with described first that grid, Yu Suoshu grid surface on the substrate are formed
The source-drain electrode of object semiconductor pattern electrical connection；And
Transparent storage capacitance, the transparent storage capacitance are located at the luminous zone of the substrate, and the transparent storage capacitance includes the
One transparency conducting layer and the second transparency conducting layer.
2. white organic LED display according to claim 1, which is characterized in that first electrically conducting transparent
Layer is second oxide semiconductor pattern and described first by will be formed after the second oxide semiconductor pattern conductor
Oxide semiconductor pattern is formed by same processing procedure.
3. white organic LED display according to claim 2, which is characterized in that second electrically conducting transparent
Layer is located at the top of first transparency conducting layer.
4. white organic LED display according to claim 3, which is characterized in that second electrically conducting transparent
Layer is electrically connected with the drain electrode or/and first oxide semiconductor pattern.
5. white organic LED display according to claim 4, which is characterized in that second electrically conducting transparent
Layer is electrically connected with the drain electrode and first oxide semiconductor pattern.
6. white organic LED display according to claim 5, which is characterized in that the source-drain electrode and institute
Stating the second transparency conducting layer is formed by using same half-tone mask and same yellow light process.
7. white organic LED display according to claim 4, which is characterized in that the transparent storage capacitance
It further include third transparency conducting layer, the third transparency conducting layer and the grid same layer are arranged.
8. white organic LED display according to claim 2, which is characterized in that second electrically conducting transparent
Layer is arranged with the grid same layer.
9. white organic LED display according to claim 8, which is characterized in that second electrically conducting transparent
Layer is electrically connected with the grid.
10. white organic LED display according to claim 1, which is characterized in that the organic hair of white light
Optical diode display further includes luminescent device and color film layer, the luminescent device be located at the transparent storage capacitance just on
Side, the coloured silk film layer are located between luminescent device and the transparent storage capacitance.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910321438.2A CN110047892A (en) | 2019-04-22 | 2019-04-22 | White organic LED display |
| PCT/CN2019/110040 WO2020215615A1 (en) | 2019-04-22 | 2019-10-09 | White light organic light-emitting diode display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910321438.2A CN110047892A (en) | 2019-04-22 | 2019-04-22 | White organic LED display |
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| Publication Number | Publication Date |
|---|---|
| CN110047892A true CN110047892A (en) | 2019-07-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910321438.2A Pending CN110047892A (en) | 2019-04-22 | 2019-04-22 | White organic LED display |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110047892A (en) |
| WO (1) | WO2020215615A1 (en) |
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| CN110783490A (en) * | 2019-11-13 | 2020-02-11 | 合肥京东方卓印科技有限公司 | Display panel and preparation method thereof |
| CN111180491A (en) * | 2020-01-02 | 2020-05-19 | 京东方科技集团股份有限公司 | Display device, display panel thereof and manufacturing method of display panel |
| CN111799281A (en) * | 2020-08-12 | 2020-10-20 | 成都中电熊猫显示科技有限公司 | Manufacturing method of metal oxide array substrate, array substrate and display panel |
| WO2020215615A1 (en) * | 2019-04-22 | 2020-10-29 | 深圳市华星光电半导体显示技术有限公司 | White light organic light-emitting diode display |
| WO2021027107A1 (en) * | 2019-08-09 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2021164569A1 (en) * | 2020-02-17 | 2021-08-26 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display panel |
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| WO2020215615A1 (en) | 2020-10-29 |
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