CN110047863A - Stacked back side illumination image sensor and its manufacturing method - Google Patents
Stacked back side illumination image sensor and its manufacturing method Download PDFInfo
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- CN110047863A CN110047863A CN201910362483.2A CN201910362483A CN110047863A CN 110047863 A CN110047863 A CN 110047863A CN 201910362483 A CN201910362483 A CN 201910362483A CN 110047863 A CN110047863 A CN 110047863A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
This disclosure relates to a kind of stacked back side illumination image sensor and its manufacturing method and imaging device.A kind of stacked back side illumination image sensor includes: the first circuit；Second circuit, wherein the heat that first circuit generates is greater than the heat that the second circuit generates；And radiating piece, the radiating piece include the first radiating part corresponding to first circuit setting, the heat that first radiating part is constructed such that first circuit generates is uniformly distributed on first radiating part.
Description
Technical field
This disclosure relates to technical field of semiconductors, it particularly relates to a kind of stacked back side illumination image sensor and its
Manufacturing method.
Background technique
The optical signal received can be converted to electric signal by imaging sensor, extensive to realize the sensing to image
Applied in various imaging devices.According to the difference of the incident direction of light, imaging sensor can be divided into front-illuminated and back-illuminated
Two kinds of formula.In the image sensor, it generally includes the pixel chip for receiving and converting optical signals into electric signal and is used for
The logic chip being further processed is realized to the electric signal generated in pixel chip.In order to reduce sky shared by imaging sensor
Between, keep its structure more compact, the imaging sensor of stacked can be used, that is, laying out pixel is brilliant by the way of stacking
Piece and logic chip.
Summary of the invention
According to one aspect of the disclosure, a kind of stacked back side illumination image sensor is provided, comprising: the first circuit；
Second circuit, wherein the heat that first circuit generates is greater than the heat that the second circuit generates；And radiating piece, institute
Stating radiating piece includes the first radiating part corresponding to first circuit setting, and first radiating part is constructed such that described
The heat that first circuit generates is uniformly distributed on first radiating part.
In one embodiment, the radiating piece further includes the second radiating part corresponding to second circuit setting, institute
The heat that the second radiating part is constructed such that the second circuit generates is stated to be uniformly distributed on second radiating part.
In one embodiment, first radiating part and second radiating part are connected thermally to one another.
In one embodiment, first radiating part is connected with second radiating part by Heat Conduction Material.
In one embodiment, first radiating part and second radiating part are connected to each other directly.
In one embodiment, the material of the radiating piece includes metal.
In one embodiment, the radiating piece is electrically insulated with first circuit and the second circuit.
In one embodiment, the metal is selected from: gold, silver, copper, aluminium, iron include alloy more than two of them.
In one embodiment, the material of the radiating piece includes heat-conducting insulation material.
In one embodiment, the heat-conducting insulation material includes: aluminium nitride, aluminium oxide, silicon carbide or silicon nitride.
In one embodiment, the stacked back side illumination image sensor includes logic chip, and the radiating piece is located at
In the logic chip.
In one embodiment, the logic chip includes the first wiring layer, and the radiating piece is located at first wiring
In layer.
In one embodiment, the radiating piece is electrically insulated with the first wiring portion in first wiring layer.
In one embodiment, the radiating piece includes at least two layers of heat dissipating layer.
In one embodiment, shown at least two layers of heat dissipating layer is thermally connected by via hole.
A kind of imaging device another aspect of the present disclosure provides, the imaging device include stacked back-illuminated
Formula imaging sensor, the stacked back side illumination image sensor include: the first circuit；Second circuit, wherein first electricity
The heat that road generates is greater than the heat that the second circuit generates；And radiating piece, the radiating piece include corresponding to described the
First radiating part of one circuit setting, first radiating part are constructed such that the heat of the first circuit generation described
It is uniformly distributed on first radiating part.
According to the another aspect of the disclosure, a kind of manufacturing method of stacked back side illumination image sensor is provided, is wrapped
It includes: first substrate being provided, is provided with the first circuit and second circuit on the first substrate, wherein first circuit generates
Heat be greater than the second circuit generate heat；The first insulating layer is formed on the first substrate；Absolutely described first
Radiating piece is formed in edge layer, wherein the radiating piece includes the first radiating part corresponding to first circuit setting, and described the
The heat that one radiating part is constructed such that first circuit generates is uniformly distributed on first radiating part.
In one embodiment, the radiating piece further includes the second radiating part corresponding to second circuit setting, institute
The heat that the second radiating part is constructed such that the second circuit generates is stated to be uniformly distributed on second radiating part.
In one embodiment, it is formed after the first insulating layer on the first substrate, the manufacturing method further include:
The first wiring portion is formed in first insulating layer, wherein first wiring portion is electrically insulated with the radiating piece.
In one embodiment, the radiating piece includes at least two layers of heat dissipating layer, the shape in first insulating layer
It include: that the radiating piece is formed using rewiring technique at radiating piece.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become more apparent from.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 shows the overlooking structure diagram of stacked back side illumination image sensor；
Fig. 2 shows the overlooking structure diagrams of the logic chip of stacked back side illumination image sensor in Fig. 1；
Fig. 3 shows the side structure schematic view of stacked back side illumination image sensor；
Fig. 4 A- Fig. 4 B shows the side view of stacked back side illumination image sensor according to the exemplary embodiment of the disclosure
Structural schematic diagram；
Fig. 5 A~Fig. 5 D shows the system of stacked back side illumination image sensor according to the exemplary embodiment of the disclosure
Make the part flow diagram of method；
Fig. 6 shows the schematic diagram of imaging device according to the exemplary embodiment of the disclosure.
Fig. 7 shows the process of the manufacturing method of stacked back side illumination image sensor according to an embodiment of the present disclosure
Figure.
Fig. 8 shows the process of the manufacturing method of stacked back side illumination image sensor according to an embodiment of the present disclosure
Figure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In some cases, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, the disclosure is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.That is, structure and method herein is to show in an exemplary fashion, for
The different embodiments of structures and methods in the bright disclosure.It will be understood by those skilled in the art, however, that they be merely illustrative can
Exemplary approach with the disclosure for being used to implement, rather than mode exhausted.In addition, attached drawing is not necessarily drawn to scale, it is some
Feature may be amplified to show the details of specific component.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the logic chip of imaging sensor, heat caused by the sub-circuit for realizing different function is generally also not
It is identical；And in pixel chip, the working condition of each pixel is often related to its operating temperature, such as photodiode in pixel
Dark current generally increase with the rising of operating temperature.For stacked back side illumination image sensor, when in logic chip
Each sub-circuit generate heat difference when, it is easy to cause the Temperature Distribution in pixel chip also uneven, so that respectively
The dark current of photodiode has differences, and causes the deviation even mistake of image sensing.
Fig. 1 shows the schematic diagram of stacked back side illumination image sensor.Fig. 2 shows stacked back side illumination image sensings
The schematic diagram of the logic chip of device.Fig. 3 shows the schematic diagram of stacked back side illumination image sensor.
As shown in Figure 1 to Figure 3, in stacked back side illumination image sensor 100 ', including logic chip 110 ' and pixel
Chip 120 ', wherein pixel chip 120 ' stacks the top for being set to logic chip 110 '.Logic chip 110 ' may include
One substrate 111 ' is provided with the first circuit 114 ' and second circuit 115 ' on first substrate 111 '.In first substrate 111 '
A side surface close to the first circuit 114 ' and second circuit 115 ' is provided with the first wiring layer, and the first wiring layer includes by conduction
What material was formed first wiring portion 113 ' and the first insulation division 112 ' for being formed by insulating materials.Pixel chip 120 ' may include
The multiple pixels being arranged in array can be set in the second substrate 121 ' in the second substrate 121 ', include at least in each pixel
One photodiode 124 '.110 ' one side surface of close logic chip of the second substrate 121 ' is provided with the second wiring layer,
Second wiring layer includes the second insulation division 122 ' that second formed by conductive material wiring portion 123 ' He be formed by insulating materials.
It can be logical by conduction between second wiring portion 123 ' of pixel chip 120 ' and the first wiring portion 113 ' of logic chip 110 '
The electrical connection of the interconnection pieces such as hole 132 ' (such as through silicon via (Through Silicon Via, TSV)), and stacked back side illumination image
Sensor 100 ' is whole can be electrically connected by connection terminal 131 ' etc. with external circuit.
In stacked back side illumination image sensor 100 ', detected incident light is incident on pixel chip 120 ' first
On, under the action of photodiode 124 ', it is converted into electric signal.It, can be in a kind of illustrative pixel chip 120 '
Including multiple pixels, each pixel can arrange in array-like (rectangle, triangle, hexagon etc.), thus to different location
On the optical signal that receives detected, and ultimately form the sensing to complete image.It may include one in each pixel
Photodiode 124 ' and corresponding lens (not shown) and colour filter (not shown) etc..Certainly, sensitive in order to improve detection
Degree realizes detection to the optical signal of different-waveband, also may include in one pixel two or more it is identical or
Different photodiodes 124 '.
Electric signal being further processed through logic chip 110 ' that each photodiode 124 ' generates in pixel chip 120 ',
Generate the transducing signal for capableing of preferably feedback image information.As shown in Fig. 2, can specifically include in logic chip 110 ' defeated
Enter/export (IO), phaselocked loop (PLL), mobile industry processor interface (MIPI), analog-digital converter (ADC), logic (Logic),
The sub-circuits such as dynamic password (OTP), reset voltage (VRES).When under each sub-circuit is in running order, in the unit time
The heat of interior generation is not usually identical.For example, in figure 2 and figure 3, the first circuit including phaselocked loop and logic subcircuit etc.
The heat of 114 ' generations is usually larger, and including input/output, mobile industry processor interface, analog-digital converter, dynamic password
The heat generated with the second circuit 115 ' of reset voltage sub-circuit etc. is then smaller, and then leads in logic chip 110 ' not same district
The temperature in domain is different, and in dashed region shown in Fig. 2, temperature is usually higher.
When pixel chip 120 ' is stacked relative to logic chip 110 ' to be arranged, due to logic chip 110 ' and pixel chip
There is certain heat transmitting between 120 ', therefore non-uniform temperature can also feed back to pixel chip 120 ' on logic chip 110 '
On, that is, the higher region of local temperature is formed on pixel chip 120 ', as Fig. 1 dashed region in.For photoelectricity two
For pole pipe 124 ', even if received light signal strength is less than its sensing threshold value, can also it be produced in photodiode 124 '
Raw charge, i.e., so-called dark current, the size of the dark current are as the property of photodiode 124 ' itself and the ring locating for it
What the factors such as border temperature determined, it is unrelated with received light signal strength.It is dark in a kind of illustrative photodiode 124 '
The logarithm of electric current relationship proportional to operating temperature.When the light signal strength that photodiode 124 ' receives is greater than or equal to it
When sensing threshold value, photoelectric current is generated.Photoelectric current and dark current are difficult to differentiate between, therefore light received by photodiode 124 ' is believed
Number intensity is determined jointly according to photoelectric current and dark current.It is according to the above analysis it is found that if different in pixel chip 120 '
The dark current different caused by uneven with temperature of photodiode 124 ', then determining the light signal strength received
When, if not accounting for the difference of above-mentioned dark current, it will introduce deviation even mistake.
Fig. 4 A and 4B show the schematic diagram of stacked back side illumination image sensor according to an embodiment of the present disclosure.
In an exemplary embodiment of the disclosure, as shown in Figure 4 A, stacked back side illumination image sensor 100 includes the
One circuit 114, second circuit 115 and radiating piece 116, wherein the heat that the first circuit 114 generates is generated greater than second circuit 115
Heat, radiating piece 116 includes the first radiating part 117 corresponding to the setting of the first circuit 114, and the first radiating part 117 is constructed
It is uniformly distributed on the first radiating part 117 at the heat for generating the first circuit 114.
In the embodiment shown in Fig. 4 A, the first circuit 114 may include generating such as phaselocked loop and logic subcircuit
The biggish sub-circuit of heat, second circuit 115 may include such as input/output, mobile industry processor interface, analog-to-digital conversion
Device, dynamic password and reset voltage sub-circuit etc. generate the lesser sub-circuit of heat.When the first circuit 114 and second circuit 115
When being in working condition, the heat that the first circuit 114 generates in the unit time is greater than the heat that second circuit 115 generates；Or
Person, during a certain operation phase of stacked back side illumination image sensor 100 or whole service, the first circuit 114 is generated
Total amount of heat be greater than the total amount of heat that second circuit 115 generates, then, in order to improve the uniform of Temperature Distribution on pixel chip 120
Property, then it can be realized by setting radiating piece 116.
As shown in Figure 4 A, radiating piece 116, i.e. the first radiating part at least are provided in the region of neighbouring first circuit 114
117.In the operational process of the first circuit 114, generated heat is delivered on the first radiating part 117 by heat uniformly to be divided
Cloth, so that the Temperature Distribution in the adjacent domain of the first circuit 114 is substantially uniform, so that in pixel chip 120 extremely
Each photodiode 124 corresponding to 114 part of the first circuit has almost the same dark current less, to improve image sensing
Accuracy.Radiating piece 116 can be based on preparing, to help to reduce stacked back with the compatible technique of semiconductor technology
The manufacturing cost of illuminated image sensor 100.
In addition, as shown in Figure 4 A, the first radiating part 117 can be made of multilayered thermally-conductive material, heat connects each other between each layer
It connects.But the present disclosure is not limited thereto, for example, the first radiating part 117 can also be only made of single layer Heat Conduction Material or first
Radiating part 117 can be made of multilayered thermally-conductive material, but be not thermally connected between each layer Heat Conduction Material.
As shown in Figure 4 B, according to another embodiment of the present disclosure, it is contemplated that second circuit 115 can also generate centainly
Heat, radiating piece 116 can also include corresponding to second circuit 115 be arranged the second radiating part 118, the second radiating part 118
The heat for being constructed such that second circuit 115 generates is uniformly distributed on the second radiating part 118, so that second circuit
Uniformity of temperature profile in 115 adjacent domain, so that at least corresponding to 115 part of second circuit in pixel chip 120
Each photodiode 124 have almost the same dark current, to improve the accuracy of image sensing.
As shown in Figure 4 B, may be there is no apparent boundary between the first radiating part 117 and the second radiating part 118, it can be with
The part radiating piece 116 of relatively close first circuit 114 is considered as the first radiating part 117, by relatively close second circuit 115
Part radiating piece 116 is considered as the second radiating part 118.First radiating part 117 and the second radiating part 118 can be connected thermally to one another, such as
On the one hand this setting can make the temperature in the corresponding region of the first circuit 114 and the corresponding region of second circuit 115 respectively
It is evenly distributed, on the other hand it is also possible that heat caused by the first circuit 114 and second circuit 115 is in the first circuit 114
It is evenly distributed, i.e., is dissipated by the first radiating part 117 and second being connected thermally to one another in the corresponding whole region of second circuit 115
Hot portion 118 promotes heat to transmit from the corresponding region of the first circuit 114 to the corresponding region of second circuit 115, so as to improve whole
The uniformity of the dark current of each photodiode 124 in a stacked back side illumination image sensor 100.Although the mode of heat transmitting
Varied but relatively more succinct is the conduction that heat is realized by the first radiating part 117 of connection and the second radiating part 118,
The first radiating part 117 and second can be specifically connected for example, by Heat Conduction Materials such as metal, nitride, oxide, carbide to dissipate
Hot portion 118 or the first radiating part 117 and the second radiating part 118 can also be connected to each other directly.Certainly, in some other reality
It applies in example, the first radiating part 117 of setting and the second radiating part 118 can also be individually insulated, according to the first circuit 114 and the second electricity
The respective radiating requirements in road 115 select different heat sink material or radiator structure, realize the first radiating part 117 and the second heat dissipation
The arrangement in portion 118 targetedly radiates to the first circuit 114 and second circuit 115.
In addition, as shown in Figure 4 B, the second radiating part 118 can be made of multilayered thermally-conductive material, can be each other between each layer
It is thermally connected.But the present disclosure is not limited thereto, for example, the second radiating part 118 can also be only made of single layer Heat Conduction Material, or
Second radiating part 118 can be made of multiple Heat Conduction Materials, but be not thermally connected between each layer Heat Conduction Material.
In order to simplify the preparation process of radiating piece 116, in some specific examples, metal can choose as radiating piece
116 material, thus it is mutually compatible with semiconductor technology, to reduce the manufacturing cost of stacked back side illumination image sensor 100.System
The metal of standby radiating piece 116 specifically can be gold, silver, copper, aluminium, iron or comprising alloy more than two of them, and above-mentioned metal is equal
With good thermal conductivity, in addition, wherein at least part metals and semiconductor technology have compatibility well, it is at least partly golden
Belonging to itself has lower cost, can be selected as needed in practice.
When the material for forming radiating piece 116 includes metal, in order to avoid influencing the normal work of circuit in imaging sensor
Make, radiating piece 116 is electrically insulated with the first circuit 114 and second circuit 115.Specifically, can be by radiating piece 116 and
Insulating materials is set between one circuit 114 and second circuit 115 and realizes electrical isolation.Further, which can also be same
When be Heat Conduction Material, to improve the heat transfer between the first circuit 114 and second circuit 115 and radiating piece 116, realize preferably
Heat dissipation.It is understood that radiating piece 116 also in imaging sensor such as photodiode 124, the first wiring portion 113,
Other circuits such as the second wiring portion 123, conductive through hole 132 and connection terminal 131 or sub-circuit electrical isolation, i.e., radiating piece 116 is
Floating setting.
In other specific examples, the material of radiating piece 116 also may include heat-conducting insulation material.When using thermally conductive exhausted
When edge material, radiating piece 116 can be connected directly with the first circuit 114 and/or second circuit 115, to further improve heat
The effect of conduction, the heat for enabling the first circuit 114 and/or second circuit 115 to generate is evenly dispersed rapidly to be distributed in heat dissipation
On part 116, and then improve the sensing performance of imaging sensor.For example, the heat-conducting insulation material can be aluminium nitride, aluminium oxide,
One or more of silicon carbide or silicon nitride.Meanwhile having between above-mentioned heat-conducting insulation material and semiconductor technology preferable
Compatibility facilitates the manufacturing cost for reducing stacked back side illumination image sensor 100.
As shown in Figure 4 A and 4 B shown in FIG., in the image sensor, the first circuit 114 and second circuit 115, which can be set, is patrolling
On the first substrate 111 for collecting chip 110, and the first wiring portion 113 is set in the first wiring layer of 111 top of first substrate.
First wiring portion 113 can be formed by metal, to realize conduction.Further, the first wiring portion 113 may include multilayer conductive
Layer, it can be electrically connected by conductive through hole between conductive layer.Meanwhile first further includes being filled in each conductive layer, in wiring layer
The first insulation division 112 between one circuit 114 and second circuit 115, the first insulation division 112 can be by oxide, nitride etc.
Insulating materials is formed, and interlock circuit is isolated, ensures the normal operation of imaging sensor, and provides the structure branch of imaging sensor
Support.
As described above, radiating piece 116 may include at least two layers of heat dissipating layer.When radiating piece 116 includes multi-layer heat dissipation layer,
Help to disperse heat on the direction on vertical 111 surface of first substrate, to increase heat dissipation area, accelerates heat dissipation speed
Degree, on the one hand makes the dark current of each photodiode 124 in pixel chip 120 substantially uniform, on the other hand also contributes to reducing
The bulk temperature of stacked back side illumination image sensor 100 reduces thermal noise, improves sensing precision and sensing sensitivity.Also,
By the way that multi-layer heat dissipation layer is arranged, compared to setting monolith radiating piece 116, additionally it is possible to big under the premise of basic guarantee heat dissipation effect
Width saves heat sink material, to reduce the material cost of stacked back side illumination image sensor 100.
Further, it can be independently arranged between heat dissipating layer and heat dissipating layer, pass through the first insulation division 112 between heat dissipating layer
It is isolated.Alternatively, can also be thermally connected by via hole between heat dissipating layer and heat dissipating layer, improve the heat transmitting between each heat dissipating layer,
To further improve heat dissipation effect.As shown in Figure 4, it is contemplated that the heat that the first circuit 114 generates is generated compared with second circuit 115
Heat it is big, therefore be located at left side close to the first circuit 114 part radiating piece 116 heat dissipating layer between being connected by via hole heat
It connects, and is located at mutually isolated setting between the heat dissipating layer of the part radiating piece 116 of the close second circuit 115 on right side.It is filled in
Heat Conduction Material in via hole is also possible to others either with the consistent metal material of conductive material etc. in conductive through hole
Heat-conducting insulation material etc., can according to need selected in practice.
In addition, the stacked back side illumination image sensor of the disclosure can be complementary metal oxide semiconductor (CMOS) figure
As sensor, it is also possible to such as charge-coupled device (CCD) imaging sensor or other types of imaging sensor.
Fig. 7 shows the manufacturing method of stacked back side illumination image sensor according to the exemplary embodiment of the disclosure.
As shown in fig. 7, the manufacturing method includes:
Step 701: first substrate 111 is provided, is provided with the first circuit 114 and second circuit 115 on first substrate 111,
Wherein, the heat that the first circuit 114 generates is greater than the heat that second circuit 115 generates；
Step 702: the first insulating layer is formed on first substrate 111；
Step 703: radiating piece 116 is formed in the first insulating layer, wherein radiating piece 116 includes corresponding to the first circuit
First radiating part 117 of 114 settings, the first radiating part 117 are constructed such that the heat that the first circuit 114 generates is dissipated first
It is uniformly distributed in hot portion 117.
Wherein, the first insulating layer can be considered as one of the first insulation division 112 or the first insulation division 112 in the first wiring layer
Part is performed etching by the corresponding position to the first insulating layer, obtains the space of setting radiating piece 116, and fill radiating piece
116 in wherein, to form radiating piece 116.
According to the related embodiment of above-mentioned stacked back side illumination image sensor 100 it is found that radiating piece 116 can also include
Corresponding to the second radiating part 118 that second circuit 115 is arranged, the second radiating part 118 is constructed such that second circuit 115 generates
Heat be uniformly distributed on the second radiating part 118.
Fig. 8 shows the manufacturing method of stacked back side illumination image sensor according to another embodiment of the present disclosure.
As shown in figure 8, the difference of this method and method shown in Fig. 7 is, after step 702, which can also include:
Step 804 forms the first wiring portion 113 in the first insulating layer, wherein the first wiring portion 113 and radiating piece 116
Electrical isolation.
When radiating piece 116 and the first wiring portion 113, which use identical material, to be prepared, such as to be all made of made of metal standby
When, then in the manufacturing method of imaging sensor, radiating piece 116 and the first wiring portion 113 can synchronize formed.Work as radiating piece
116 and first wiring portion 113 when using different material preparation, for example, radiating piece use heat-conducting insulation material and first
When wiring portion 113 uses metal material preparation, then in the manufacturing method of imaging sensor, radiating piece 116 and the first wiring
Portion 113 can be respectively formed.
Below with reference to Fig. 5 A- Fig. 5 D detailed description according to the manufacturer of the stacked back side illumination image sensor of the disclosure
Method.It, can in the identical situation of material used by the first radiating part 117 and the first wiring portion 113 as shown in Fig. 5 A~Fig. 5 D
The first radiating part 117 and the first wiring portion 113 are formed with synchronous.As shown in Figure 4 A and 4 B shown in FIG., the first radiating part 117 includes multilayer
Heat dissipating layer, the first wiring portion 113 include plurality of conductive layers, then each heat dissipating layer and conductive layer are successively formed.
As shown in Figure 5A, one is deposited on the first substrate 111 for being prepared with the first circuit 114 and second circuit 115
Layer insulating materials (such as silica) is used as the first insulating layer, and the first insulating layer forms a part of the first insulation division 112.
Then, as shown in Figure 5 B, the first insulating layer is performed etching, forms through-hole and groove.For example, can be using double big
Ma Shige technique forms groove after being initially formed through-hole, or forms through-hole after being initially formed groove, and the disclosure is without limitation.
Then, as shown in Figure 5 C, corresponding material is filled in through-hole and groove, forms conductive layer and heat dissipating layer, to divide
A part of the first wiring layer 113 and radiating piece 116 is not formed.For example, in the first wiring layer 113 and radiating piece 116 by identical
Material (such as copper) made of in situation, can by modes such as physical deposition, chemical vapor deposition, plating, in groove and
Copper is filled in through-hole, to be formed simultaneously a part of the first wiring layer 113 and radiating piece 116.It should be appreciated that in the first wiring
Layer 113 and in the case that radiating piece 116 is made from a variety of materials, can be respectively formed in different processing steps and/or
Fill and the corresponding groove (or through-hole) of the first wiring layer 113 and groove corresponding with radiating piece 116.
It further, as shown in Figure 5 D, is multilayered structure in wiring layer, the first radiating part 117, the second radiating part 118
In the case of, the step of can repeating above-mentioned Fig. 5 A- Fig. 5 C, details are not described herein.Complete entire first wiring portion 113, first
After the preparation of radiating part 117 and the second radiating part 118, it can be further continued for the first insulating layer of deposition and/or other layers, thus complete
At the preparation of logic chip 110.
Then, pixel chip 120 is stacked on logic chip 110.To form complete stacked back side illumination image
Sensor 100.
Fig. 6 schematically shows the block diagram of imaging device according to an embodiment of the present disclosure.As shown in fig. 6, imaging dress
Setting 600 includes camera lens 601, imaging sensor 602, processor 603 and memory 604.Wherein, camera lens 601, which can receive, comes
From the incident light of subject, incident light is imaged on the surface of imaging sensor 602.Imaging sensor 602 is above-mentioned according to this
The optical signal received can be converted into electric signal by the stacked back side illumination image sensor of disclosed embodiment.Processor
The electric signal that 603 pairs of imaging sensors 602 generate is handled, and is stored in the memory 604.
Can also include following technical scheme according to some embodiments of the present disclosure:
1, a kind of stacked back side illumination image sensor characterized by comprising
First circuit；
Second circuit, wherein the heat that first circuit generates is greater than the heat that the second circuit generates；And
Radiating piece, the radiating piece include the first radiating part corresponding to first circuit setting, first heat dissipation
The heat that portion is constructed such that first circuit generates is uniformly distributed on first radiating part.
2, the stacked back side illumination image sensor according to 1, which is characterized in that the radiating piece further includes corresponding to
Second radiating part of the second circuit setting, second radiating part are constructed such that the heat that the second circuit generates
It is uniformly distributed on second radiating part.
3, the stacked back side illumination image sensor according to 2, which is characterized in that first radiating part and described
Two radiating parts are connected thermally to one another.
4. the stacked back side illumination image sensor according to 3, which is characterized in that first radiating part and described
Two radiating parts are connected by Heat Conduction Material.
5. the stacked back side illumination image sensor according to 3, which is characterized in that first radiating part and described
Two radiating parts are connected to each other directly.
6, the stacked back side illumination image sensor according to any one of 1 to 5, which is characterized in that the radiating piece
Material include metal.
7. the stacked back side illumination image sensor according to 6, which is characterized in that the radiating piece and first electricity
Road and second circuit electrical isolation.
8. the stacked back side illumination image sensor according to 6, which is characterized in that the metal is selected from: gold, silver, copper,
Aluminium, iron include alloy more than two of them.
9, the stacked back side illumination image sensor according to any one of 1 to 5, which is characterized in that the radiating piece
Material include heat-conducting insulation material.
10, the stacked back side illumination image sensor according to 9, which is characterized in that the heat-conducting insulation material includes:
Aluminium nitride, aluminium oxide, silicon carbide or silicon nitride.
11, the stacked back side illumination image sensor according to any one of 1 to 5, which is characterized in that the stacked
Back side illumination image sensor includes logic chip, and the radiating piece is located in the logic chip.
12. the stacked back side illumination image sensor according to 11, which is characterized in that the logic chip includes first
Wiring layer, the radiating piece are located in first wiring layer.
13. the stacked back side illumination image sensor according to 12, which is characterized in that the radiating piece and described first
The first wiring portion electrical isolation in wiring layer.
14. the stacked back side illumination image sensor according to 1, which is characterized in that the radiating piece includes at least two
Layer heat dissipating layer.
15. the stacked back side illumination image sensor according to 14, which is characterized in that at least two layers of heat dissipating layer is logical
Via hole is thermally connected.
16, a kind of imaging device, which is characterized in that the imaging device includes the heap according to any one of 1 to 15
Stack-type back side illumination image sensor.
17, a kind of manufacturing method of stacked back side illumination image sensor characterized by comprising
First substrate is provided, is provided with the first circuit and second circuit on the first substrate, wherein first circuit
The heat of generation is greater than the heat that the second circuit generates；
The first insulating layer is formed on the first substrate；
Radiating piece is formed in first insulating layer, wherein the radiating piece includes corresponding to first circuit to set
The first radiating part set, first radiating part are constructed such that the heat that first circuit generates radiates described first
It is uniformly distributed in portion.
18, the manufacturing method according to 17, which is characterized in that the radiating piece further includes corresponding to the second circuit
The second radiating part being arranged, second radiating part are constructed such that the heat that the second circuit generates is dissipated described second
It is uniformly distributed in hot portion.
19, the manufacturing method according to 17 or 18, which is characterized in that the manufacturing method further include:
The first wiring portion is formed in first insulating layer, wherein first wiring portion and radiating piece electricity are absolutely
Edge.
20, the manufacturing method according to 17 or 18, which is characterized in that the radiating piece includes at least two layers of heat dissipating layer,
It is described in first insulating layer formed radiating piece include:
The radiating piece is formed using technique is rerouted.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
In addition, the description of front may be referred to and be " connected " or " coupling " element together or node or feature.Such as
It is used herein, unless explicitly stated otherwise, " connection " mean an element/node/feature and another element/node/
Feature is being directly connected (or direct communication) electrically, mechanically, in logic or in other ways.Similarly, unless separately
It clearly states outside, " coupling " means that an element/node/feature can be with another element/node/feature with direct or indirect
Mode link mechanically, electrically, in logic or in other ways to allow to interact, even if the two features may
It is not directly connected to be also such.That is, " coupling " is intended to encompass the direct connection and indirectly of element or other feature
Connection, including the use of the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can with the similar terms such as " first " used herein, " second ", and
And it thus is not intended to limit.For example, unless clearly indicated by the context, be otherwise related to structure or element word " first ", "
Two " do not imply order or sequence with other such digital words.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of stacked back side illumination image sensor characterized by comprising
First circuit；
Second circuit, wherein the heat that first circuit generates is greater than the heat that the second circuit generates；And
Radiating piece, the radiating piece include the first radiating part corresponding to first circuit setting, the first radiating part quilt
The heat for being configured so that first circuit generates is uniformly distributed on first radiating part.
2. stacked back side illumination image sensor according to claim 1, which is characterized in that the radiating piece further includes pair
Second radiating part of the setting of second circuit described in Ying Yu, second radiating part are constructed such that the second circuit generated
Heat is uniformly distributed on second radiating part.
3. stacked back side illumination image sensor according to claim 2, which is characterized in that first radiating part and institute
The second radiating part is stated to be connected thermally to one another.
4. stacked back side illumination image sensor according to claim 3, which is characterized in that first radiating part and institute
The second radiating part is stated to be connected by Heat Conduction Material.
5. stacked back side illumination image sensor according to claim 3, which is characterized in that first radiating part and institute
The second radiating part is stated to be connected to each other directly.
6. stacked back side illumination image sensor according to any one of claim 1 to 5, which is characterized in that described to dissipate
The material of warmware includes metal.
7. stacked back side illumination image sensor according to claim 6, which is characterized in that the radiating piece and described the
One circuit and second circuit electrical isolation.
8. stacked back side illumination image sensor according to claim 6, which is characterized in that the metal is selected from: gold,
Silver, copper, aluminium, iron include alloy more than two of them.
9. a kind of imaging device, which is characterized in that the imaging device includes according to any one of claim 1 to 8
Stacked back side illumination image sensor.
10. a kind of manufacturing method of stacked back side illumination image sensor characterized by comprising
First substrate is provided, is provided with the first circuit and second circuit on the first substrate, wherein first circuit generates
Heat be greater than the second circuit generate heat；
The first insulating layer is formed on the first substrate；
Radiating piece is formed in first insulating layer, wherein the radiating piece includes corresponding to first circuit to be arranged
First radiating part, first radiating part are constructed such that the heat of the first circuit generation on first radiating part
It is uniformly distributed.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085585A (en) * | 2019-05-05 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | Electrostatic protection device and display panel |
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|---|---|---|---|---|
| CN102983143A (en) * | 2011-09-06 | 2013-03-20 | 索尼公司 | Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method |
| US20160233347A1 (en) * | 2013-03-15 | 2016-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image Sensor Device and Method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983143A (en) * | 2011-09-06 | 2013-03-20 | 索尼公司 | Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method |
| US20160233347A1 (en) * | 2013-03-15 | 2016-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image Sensor Device and Method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085585A (en) * | 2019-05-05 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | Electrostatic protection device and display panel |
| CN110085585B (en) * | 2019-05-05 | 2021-02-02 | 深圳市华星光电半导体显示技术有限公司 | Electrostatic protection device and display panel |
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Application publication date: 20190723 |