CN110047798A - Metal wire, the production method of display panel and display panel - Google Patents
Metal wire, the production method of display panel and display panel Download PDFInfo
- Publication number
- CN110047798A CN110047798A CN201910264274.4A CN201910264274A CN110047798A CN 110047798 A CN110047798 A CN 110047798A CN 201910264274 A CN201910264274 A CN 201910264274A CN 110047798 A CN110047798 A CN 110047798A
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- Prior art keywords
- metal
- default
- layer
- lighting process
- metal wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
Abstract
The embodiment of the present application discloses the production method and display panel of a kind of metal wire, display panel, wherein the production method of metal wire includes: to carry out first time lighting process to default metal layer；Development treatment is carried out to the default metal layer after the first time lighting process；Second of lighting process is carried out to the default metal layer after development treatment, to remove the impurity of the default layer on surface of metal；Default metal layer after second of lighting process is performed etching, to form metal wire.This programme chemical reaction can occur to avoid impurity with metal under the action of plasma and generate compound and metal be caused to change colour.
Description
Technical field
This application involves field of display technology more particularly to a kind of metal wires, the production method of display panel and display surface
Plate.
Background technique
In current dry etching technology, all there is a common ground, i.e. metal wire can be exposed in plasma ambient, lead
Causing the remaining organic substance of metal line surface that chemical reaction generation chemical combination substance occurs with metal under the action of plasma causes
Metal discoloration, and then influence the performance of product.
Summary of the invention
The embodiment of the present application provides the production method and display panel of a kind of metal wire, display panel, can solve
The problem of metal changes colour in etching process.
The embodiment of the present application provides a kind of production method of metal wire, comprising:
First time lighting process is carried out to default metal layer；
Development treatment is carried out to the default metal layer after the first time lighting process；
Second of lighting process is carried out to the default metal layer after development treatment, it is miscellaneous on the default metal layer to remove
Matter；
Default metal layer after second of lighting process is performed etching, to form metal wire.
In the production method of metal wire described herein, the default metal layer to after development treatment carries out second
Secondary lighting process, comprising:
Second of lighting process is carried out to the default metal layer after the development treatment using ultraviolet light.
In the production method of metal wire described herein, to the default metal layer after second of lighting process
During performing etching, further includes:
Reduction treatment is carried out to the oxide of the default layer on surface of metal after second of lighting process, so that described
Oxide is reduced to metal identical with the default metal layer；
Wherein, the default metal layer is copper, the default layer on surface of metal to after second of lighting process
Oxide carries out reduction treatment, comprising:
Default metal after second of lighting process is placed in hydrogen, so that the default layer on surface of metal
Copper oxide be reduced to copper.
In the production method of metal wire described herein, to the default metal layer after second of lighting process
It performs etching, to be formed after metal wire, further includes:
Reduction treatment is carried out to the oxide of the metal line surface, so that the oxide is reduced to and the metal
The identical metal of line；
Wherein, the metal wire is copper, and the oxide to the metal line surface carries out reduction treatment, comprising:
The metal wire is placed in hydrogen, so that the copper oxide of the metal line surface is reduced to copper.
In the production method of metal wire described herein, described pair of default metal layer carries out first time lighting process,
Include:
Photoresist is coated on default metal layer, to be exposed processing to the default metal layer.
In the production method of metal wire described herein, the default metal to after the first time lighting process
Layer carries out development treatment, comprising:
Development treatment will be carried out in default metal layer merging developer solution after the exposure-processed.
In the production method of metal wire described herein, the impurity is from the photoresist or the development
Liquid.
The embodiment of the present application also provides a kind of production method of display panel comprising the production of above-described metal wire
Method.
In the production method of display panel described herein, the metal wire is data line or public electrode wire.
The embodiment of the present application also provides a kind of display panel, the metal wire including substrate and setting over the substrate.
The production method and display panel of a kind of metal wire provided by the embodiments of the present application, display panel, can be to
After default metal layer after lighting process carries out development treatment, then the default metal layer after development treatment is carried out second
Lighting process remains in the impurity of default layer on surface of metal to remove, can to avoid impurity under the action of plasma with metal
Chemical reaction occurs to generate compound and metal is caused to change colour.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the flow diagram of the production method of metal wire provided by the embodiments of the present application.
Fig. 2 is the structural schematic diagram of display panel provided by the embodiments of the present application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall in the protection scope of this application.
It should be noted that the production method of metal wire provided by the embodiments of the present application is in the manufacturing process of display panel
A part, about the production method of display panel other parts, such as public click, pixel electrode, the isostructural production of grid line
Method is not the emphasis of the application concern, therefore not described in detail herein.
Wherein, display panel may include array substrate, and array substrate may include substrate and arrangement each layer on it
On metal wire.Wherein, metal wire is usually laid with default metal layer on substrate, and performing etching to default metal layer
It is formed.
It should be noted that the etching process used quarter in the production method of metal wire provided by the embodiments of the present application
Erosion technology is dry etching, wherein dry etching is mainly performed etching using reaction gas and plasma.
Metal wire in the embodiment of the present application can be data line, or public electrode wire etc..Below with data line
Production for be described in detail.
Referring to Fig. 1, Fig. 1 is the flow diagram of the production method of metal wire provided by the embodiments of the present application, wherein tool
The process of body can be such that
101, first time lighting process is carried out to default metal layer.
Wherein, first time lighting process is exposure-processed, and default metal layer can be laid on substrate.
In some embodiments, photoresist can be coated on default metal layer, to be exposed place to default metal layer
Reason.Processing is exposed to default metal layer specifically, ultraviolet light can be used and penetrate the mask plate with predetermined pattern.
102, development treatment is carried out to the default metal layer after the first time lighting process.
In some embodiments, the default metal layer after exposure-processed can be placed in developer solution and carries out development treatment.
103, second of lighting process is carried out to the default metal layer after development treatment, to remove the default metal layer table
The impurity in face.
In some embodiments, since default layer on surface of metal is coarse, after exposure development processing, layer on surface of metal is preset
Photoresist may be attached with.In some embodiments, it is carried out at development due to needing for default metal layer to be placed in developer solution
Reason, therefore default layer on surface of metal may remain developer solution.It is that the impurity of default layer on surface of metal may come to default
Metal layer is exposed used photoresist or developer solution when development treatment.
In some embodiments, the impurity for presetting layer on surface of metal may include organic substance.It is understood that carving
During erosion, default metal layer can be exposed in plasma ambient, under the action of plasma, remain in default layer on surface of metal
Organic matter can with metal occur chemical reaction generate compound, so as to cause metal discoloration.
In some embodiments, ultraviolet light can be used to carry out at second of illumination the default metal layer after development treatment
Reason can be to avoid organic matter and metal under the action of plasma to decompose the organic substance for remaining in default layer on surface of metal
It chemically reacts, generates compound and metal is caused to change colour.
104, the default metal layer after second of lighting process is performed etching, to form metal wire.
It should be noted that needing in etching process using oxygen and nitrogen fluoride.Cause in etching process, oxygen from
Son and fluorine ion can occur chemical reaction with the metal of default metal layer and generate compound, and metal is caused to change colour.
It in some embodiments, can be right during being performed etching to the default metal layer after the second lighting process
The compound of default layer on surface of metal carries out reduction treatment, so that compound is reduced to metal identical with default metal layer.
In some embodiments, reduction treatment can be carried out to the compound of metal line surface after metal wire formation,
So that compound is reduced to metal identical with metal wire.
It should be noted that default metal layer can cause the main component of copper discoloration to be copper oxide by copper.
In some embodiments, the default metal after second of lighting process can be placed in hydrogen, so that institute
The copper oxide for stating default layer on surface of metal is reduced to copper.
In some embodiments, metal wire can be placed in hydrogen, so that the copper oxide of metal line surface is reduced to
Copper.
It should be noted that can refer to the relevant technologies about the lithographic technique of exposure development technology and metal, herein not
It is repeated again.
Originally the production method for applying a kind of metal wire of example offer can be to the default metal layer after first time lighting process
After carrying out development treatment, then second of lighting process is carried out to the default metal layer after development treatment, is remained in removal default
The impurity of layer on surface of metal chemical reaction can occur to avoid impurity with metal under the action of plasma and generate compound and lead
Cause metal discoloration.
The embodiment of the present application also provides a kind of production method of display panel, the production of the metal wire including above embodiments
Method, this will not be repeated here, the production method that can specifically refer to above-mentioned metal wire.The production method of metal wire is display panel
Manufacturing process in a part, production method of the other parts about display panel, such as public electrode, pixel electrode etc.
The production method of structure, those skilled in the art can know according to the prior art, therefore not described in detail herein.
Referring to Fig. 2, the embodiment of the present application also provides a kind of display panels comprising substrate 201 and setting are serving as a contrast
Metal wire 202 on bottom 201.
In some embodiments, which can be mobile phone, tablet computer, television set, display, laptop
Etc. the display panel of any product having a display function.
It should be noted that the production method of display panel provided by the present embodiment and above-mentioned display panel was formed
Display panel structure is consistent, is specifically referred to above-described embodiment, and this will not be repeated here.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, reference can be made to the related descriptions of other embodiments.
A kind of metal wire, the production method of display panel provided by the embodiment of the present application and display panel are carried out above
It is discussed in detail, specific examples are used herein to illustrate the principle and implementation manner of the present application, above embodiments
Explanation be merely used to help understand the technical solution and its core concept of the application；Those skilled in the art should manage
Solution: it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of technical characteristic into
Row equivalent replacement；And these are modified or replaceed, the skill of each embodiment of the application that it does not separate the essence of the corresponding technical solution
The range of art scheme.
Claims (10)
1. a kind of production method of metal wire characterized by comprising
First time lighting process is carried out to default metal layer；
Development treatment is carried out to the default metal layer after the first time lighting process；
Second of lighting process is carried out to the default metal layer after development treatment, to remove the miscellaneous of the default layer on surface of metal
Matter；
Default metal layer after second of lighting process is performed etching, to form metal wire.
2. the production method of metal wire as described in claim 1, which is characterized in that the default metal to after development treatment
Layer carries out second of lighting process, comprising:
Second of lighting process is carried out to the default metal layer after the development treatment using ultraviolet light.
3. the production method of metal wire as claimed in claim 1 or 2, which is characterized in that second of lighting process
During default metal layer afterwards performs etching, further includes:
Reduction treatment is carried out to the oxide of the default layer on surface of metal after second of lighting process, so that the oxidation
Object is reduced to metal identical with the default metal layer；
Wherein, the default metal layer is copper, the oxidation to the default layer on surface of metal after second of lighting process
Object carries out reduction treatment, comprising:
Default metal after second of lighting process is placed in hydrogen, so that the oxygen of the default layer on surface of metal
Change copper reduction is copper.
4. the production method of metal wire as claimed in claim 1 or 2, which is characterized in that second of lighting process
Default metal layer afterwards performs etching, to be formed after metal wire, further includes:
Reduction treatment is carried out to the oxide of the metal line surface, so that the oxide is reduced to and the metal wire phase
Same metal；
Wherein, the metal wire is copper, and the oxide to the metal line surface carries out reduction treatment, comprising:
The metal wire is placed in hydrogen, so that the copper oxide of the metal line surface is reduced to copper.
5. the production method of metal wire as described in claim 1, which is characterized in that described pair of default metal layer carries out for the first time
Lighting process, comprising:
Photoresist is coated on the default metal layer, to be exposed processing to the default metal layer.
6. the production method of metal wire as claimed in claim 5, which is characterized in that it is described to the first time lighting process after
Default metal layer carry out development treatment, comprising:
Development treatment will be carried out in default metal layer merging developer solution after the exposure-processed.
7. the production method of metal wire as claimed in claim 6, which is characterized in that the impurity from the photoresist or
The developer solution.
8. a kind of production method of display panel, which is characterized in that the system including metal wire described in any one of claims 1-6
Make method.
9. the production method of display panel as claimed in claim 8, which is characterized in that the metal wire is data line or public
Electrode wires.
10. a kind of display panel, which is characterized in that including the metal wire of substrate and setting over the substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264274.4A CN110047798A (en) | 2019-04-03 | 2019-04-03 | Metal wire, the production method of display panel and display panel |
| PCT/CN2019/083898 WO2020199278A1 (en) | 2019-04-03 | 2019-04-23 | Manufacturing method for metal wire and for display panel, and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264274.4A CN110047798A (en) | 2019-04-03 | 2019-04-03 | Metal wire, the production method of display panel and display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110047798A true CN110047798A (en) | 2019-07-23 |
Family
ID=67276018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910264274.4A Pending CN110047798A (en) | 2019-04-03 | 2019-04-03 | Metal wire, the production method of display panel and display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110047798A (en) |
| WO (1) | WO2020199278A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123215A (en) * | 2006-08-11 | 2008-02-13 | 联华电子股份有限公司 | Copper enchasing technology |
| CN105629613A (en) * | 2016-03-17 | 2016-06-01 | 深圳市华星光电技术有限公司 | Manufacturing method for signal line of display panel |
| CN107527870A (en) * | 2017-08-29 | 2017-12-29 | 惠科股份有限公司 | The preparation method and its making apparatus of a kind of array base palte |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100556346B1 (en) * | 2001-12-28 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | Method For Forming A Metal Line |
| CN104617049B (en) * | 2015-03-11 | 2017-06-13 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display device |
| TWI546002B (en) * | 2015-08-13 | 2016-08-11 | 馗鼎奈米科技股份有限公司 | Method for manufacturing metal line |
| CN105957810A (en) * | 2016-06-16 | 2016-09-21 | 武汉新芯集成电路制造有限公司 | Preparation method of semiconductor device |
| CN107359138A (en) * | 2017-06-22 | 2017-11-17 | 深圳市华星光电技术有限公司 | A kind of metal wire, the preparation method of array base palte and array base palte |
| CN109148490B (en) * | 2018-10-15 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and liquid crystal display panel |
-
2019
- 2019-04-03 CN CN201910264274.4A patent/CN110047798A/en active Pending
- 2019-04-23 WO PCT/CN2019/083898 patent/WO2020199278A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123215A (en) * | 2006-08-11 | 2008-02-13 | 联华电子股份有限公司 | Copper enchasing technology |
| CN105629613A (en) * | 2016-03-17 | 2016-06-01 | 深圳市华星光电技术有限公司 | Manufacturing method for signal line of display panel |
| CN107527870A (en) * | 2017-08-29 | 2017-12-29 | 惠科股份有限公司 | The preparation method and its making apparatus of a kind of array base palte |
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| Publication number | Publication date |
|---|---|
| WO2020199278A1 (en) | 2020-10-08 |
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Application publication date: 20190723 |
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