Gas-sensitive material, preparation method and application thereof in gas-sensitive sensor
Technical Field
The invention relates to the technical field of functional nano material preparation, and also relates to the technical field of gas sensing detection, in particular to a gas-sensitive material, a preparation method and application thereof in a gas-sensitive sensor.
Background
A gas sensor is an information device that converts parameters such as the type and concentration of a gas into information that can be used by a person, an instrument, a computer, or the like. The detection means can be classified into measuring changes in resistance, potential, current, heat conduction, temperature, absorption of light, refractive index of light, and the like. The gas sensor can rapidly and accurately monitor various harmful, toxic, inflammable and explosive gases in the environment, thereby having important application in the fields of disaster prevention, industrial production, environmental protection, automobile exhaust, national defense and the like. Gas sensors can be broadly classified into semiconductor gas sensors, electrochemical gas sensors, solid electrolyte gas sensors, optical gas sensors, quartz crystal microbalance gas sensors, and the like according to the effect produced by the gas sensitive material and the interaction with the gas. In recent years, semiconductor gas sensors have been studied most extensively. The semiconductor gas sensor mainly includes a metal oxide semiconductor gas sensor and an organic semiconductor gas sensor.
Semiconductor gas sensors are widely studied for their important applications in environmental sensing and medical diagnostics. The crystalline phase structure and the electronic structure of the nano zinc oxide (ZnO) are different from those of a bulk material, and the nano zinc oxide shows a plurality of peculiar properties in the aspects of thermal, electrical, magnetic and optical aspects. The ZnO gas-sensitive material is firstly applied in a sintered body type and a thick film type, but the gas-sensitive property is severely influenced due to slight difference in the preparation process, the sensitivity, consistency and repeatability of the device are poor, and the integration of elements and application circuits is not facilitated. With the progress of the thin film preparation technology, the research of the thin film type gas sensor is gradually paid attention by people. The film is prepared by physical or chemical vapor deposition, and the repeatability of the device is obviously improved. The ZnO nano film gas sensor has lower preparation cost, can meet the requirements of integration, miniaturization, multifunctionality and the like, and is one of the development directions of future gas sensors. ZnO exhibits excellent sensing properties for various oxidizing and reducing gases. It also has the advantages of low cost, simple manufacture, miniaturization, stable property, no toxicity and no harm. Therefore, many reports are focused on improving the gas sensing performance, mainly including morphology control, exposure of certain crystal planes, doping, surface modification and the like. For example, a zinc oxide nanowire-graphene gas sensor and a preparation method thereof (publication No. CN 105259218A, application date: 2015-10-28) adopt a zinc oxide nanowire and graphene nanocomposite as a gas sensitive coating to form a sensor device, so that the sensing performance is improved. The patent discloses a preparation method of a cobalt-doped zinc oxide gas-sensitive material and application thereof (publication No. CN 108190970A, application date 2018-01-08), and a cobalt-doped nano spherical zinc oxide material with high sensitivity and good selectivity is prepared by adopting a microwave and ultrasonic co-assisted solvothermal method. According to the patent, a two-dimensional square sheet-shaped porous zinc oxide gas-sensitive material and a preparation method thereof (publication No. CN 107200347A, application date 2017-06-15) are prepared by adding glycine, isoniazid and the like into zinc salt to obtain white precipitate, and calcining at high temperature to obtain the square sheet-shaped porous zinc oxide gas-sensitive material.
Graphite phase carbon nitride (g-C)3N4) The band gap of the semiconductor is moderate, the semiconductor can be coupled with various semiconductors, the separation efficiency of electrons and holes is improved, and the transfer of electrons is facilitated. G to C3N4Compounding with ZnO to prepare zinc oxide nano-sheet g-C3N4The gas sensor realizes the integration of materials and functions, exerts the advantages of the two materials and has important significance for improving the sensing performance of the materials.
In the air, oxygen molecules in the air are physically and chemically adsorbed on the surface of the semiconductor, so that the resistance value of the material is increased; when a reducing gas such as ethanol is encountered, it reacts with adsorbed oxygen adsorbed on the surface, and free electrons captured by the oxygen are released to the surface of the material to reduce the resistance of the material. Sensitivity S Ra/Rg, Ra being the resistance in air, Rg being the resistance in the test gas.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide g-C3N4A/ZnO gas-sensitive material, a preparation method and application thereof in a gas-sensitive sensor.
The technical scheme of the invention is summarized as follows:
a gas sensitive material, said g-C3N4the/ZnO gas-sensitive material is of a lamellar stacking structure, wherein g-C3N4Is in the g-C range3N4The mass fraction of ZnO is 1 percent; the g to C3N4The sensitivity of the/ZnO gas-sensitive material to 100ppm of ethanol gas reaches 84.1 at the working temperature of 280 ℃.
A preparation method of a gas sensitive material comprises the following steps: firstly preparing graphite phase nitrogen carbide, then adding zinc oxide precursor, and preparing g-C by hydrothermal method3N4The ZnO specifically comprises the following steps:
s1: preparing graphite phase carbon nitride: weighing 5g of melamine, putting the melamine into a crucible, putting the crucible into a muffle furnace, heating the crucible to 550-600 ℃ at the heating rate of 5-8 ℃/min, preserving heat for 5 hours, cooling the crucible to room temperature, taking out the melamine, grinding the melamine, dissolving the melamine in absolute ethyl alcohol, performing ultrasonic dispersion, centrifuging the mixture, taking out supernatant to obtain solid precipitate, repeating the process for three times, and putting the solid into a drying oven at 60 ℃ for drying to obtain yellow powder g-C3N4;
S2: hydrothermal preparation of g-C3N4A ZnO precursor dispersion;
s3: preparation of g-C3N4ZnO gas sensitive Material: the obtained g-C3N4Cooling ZnO precursor dispersion liquid to room temperature, standing to separate out precipitate, washing for 3 times by deionized water, drying in a drying box at the temperature of 60-100 ℃ for 1-12 h, keeping the temperature at 400-450 ℃ for 2h, cooling to room temperature, and preparing a white powdery gas sensitive material g-C3N4/ZnO;
Wherein g-C is prepared by a hydrothermal method3N4The ZnO precursor dispersion liquid comprises the following steps:
a. preparation of g-C3N4Suspension: weighing 5.9mg g-C at room temperature3N4Dissolving in 10mL of deionized water, stirring until the solution is fully dissolved to form g-C3N4A suspension;
b. preparing a zinc acetate solution: weighing 1.317g of zinc acetate in 20mL of deionized water at room temperature, and stirring until the zinc acetate is fully dissolved in a glass cup to obtain a zinc acetate solution;
c. preparation of g-C3N4ZnO precursor dispersion: adding g-C into zinc acetate solution3N4Uniformly stirring the suspension, carrying out ultrasonic treatment for 1h, pouring the suspension into 30mL of 0.4mol/L urea solution, uniformly stirring, transferring the solution into a reaction kettle, and reacting at 120-160 ℃ for 8-12 h to obtain g-C3N4ZnO precursor dispersion.
Preferably, in S1, the sample is placed in a muffle furnace and heated to 550 ℃ at a heating rate of 5 ℃/min.
Preferably, in S2, the mixture is stirred uniformly and then transferred to a reaction kettle to react for 12 hours at 120 ℃.
Preferably, S3 is dried in a 60 ℃ drying oven for 12 hours and then kept at 400 ℃ for 2 hours.
Use of a gas sensitive material in a gas sensor: g to C3N4Al coated by gold electrode coated with ZnO gas-sensitive material2O3The surface of the ceramic tube is made into a gas-sensitive sensing element.
Preferably, the preparation method of the gas-sensitive sensor element specifically comprises the following steps: taking g-C3N4Grinding ZnO product powder for 20min, adding deionized water, mixing, grinding to paste, and uniformly coating the paste on Al coated with gold electrode2O3And (3) after the surface of the ceramic tube is dried in an oven at 80 ℃ for 5 hours, penetrating the nickel-chromium wire into the composite gold electrode ceramic tube, welding the composite gold electrode ceramic tube on a hexagonal base, and aging the welded element at 300 ℃ for 3 days.
Preferably, said g-C3N4The mass ratio of ZnO to deionized water is 1: (0.5-1.5).
The invention has the beneficial effects that:
the invention utilizes a hydrothermal method to react g-C3N4Coupling with nano ZnO to prepare g-C for the first time3N4/ZnO(1%g-C3N4) The gas sensitive material realizes the integration of the gas sensor material and the functions, has higher sensitivity (S ═ Ra/Rg) to reducing gases such as ethanol, methane, hydrogen sulfide and the like, and can be used as a gas sensor material with g-C3N4When the ZnO gas-sensitive material is exposed in the air, oxygen molecules in the air are physically and chemically adsorbed on the surface of the nano ZnO semiconductor, so that the resistance value of the gas-sensitive material is increased, and when the g-C is higher than the threshold value, the oxygen molecules in the air are physically and chemically adsorbed on the surface of the nano ZnO semiconductor, and when the gas-sensitive material is exposed in the air, the oxygen molecules in the air are adsorbed on the surface of the nano ZnO semiconductor, so that the oxygen molecules in the air are adsorbed on the surface of the nano ZnO semiconductor, and the oxygen molecules in the air are adsorbed on the surface of the nano ZnO semiconductor, so that the oxygen-sensitive material is subjected to oxidation treatment3N4When encountering reducing gas, the/ZnO gas-sensitive material reacts with surface-adsorbed oxygen, and after the adsorbed oxygen is consumed, free electrons captured by the adsorbed oxygen are released to the surface of the gas-sensitive material, so that the resistance value of the gas-sensitive material is reduced. The gas-sensitive material prepared by the invention has short response and recovery time to ethanol gas with different concentrations, high sensitivity and 1% g-C3N4ZnO at an operating temperature of 280 ℃ inThe sensitivity of 100ppm ethanol gas reaches 84.1.
Drawings
FIG. 1 shows g-C3N4SEM photograph of/ZnO gas sensitive material;
FIG. 2 shows g-C3N4XRD spectrogram of/ZnO gas-sensitive material;
FIG. 3 is g-C3N4XPS spectrum of/ZnO gas sensitive material;
FIG. 4 is g-C at optimum operating temperature3N4Response curve of ZnO to ethanol gas of different concentrations.
Detailed Description
The present invention is further described in detail below with reference to examples so that those skilled in the art can practice the invention with reference to the description.
The invention provides an embodiment g-C3N4/ZnO gas-sensitive material, said g-C3N4the/ZnO gas-sensitive material is of a lamellar stacking structure, wherein g-C3N4Is in the g-C range3N4The mass fraction of ZnO is 1 percent; the g to C3N4The sensitivity of the/ZnO gas-sensitive material to 100ppm of ethanol gas reaches 84.1 at the working temperature of 280 ℃.
The invention further provides the g-C3N4The preparation method of the ZnO gas-sensitive material comprises the following steps: firstly preparing graphite phase nitrogen carbide, then adding zinc oxide precursor, and preparing g-C by hydrothermal method3N4The ZnO specifically comprises the following steps:
s1: preparing graphite phase carbon nitride: weighing 5g of melamine, putting the melamine into a crucible, putting the crucible into a muffle furnace, heating the crucible to 550-600 ℃ at the heating rate of 5-8 ℃/min, preserving heat for 5 hours, cooling the crucible to room temperature, taking out the melamine, grinding the melamine, dissolving the melamine in absolute ethyl alcohol, performing ultrasonic dispersion, centrifuging the mixture, taking out supernatant to obtain precipitate, repeating the process for three times, and putting the precipitate into a 60 ℃ drying oven for drying to obtain yellow powder g-C3N4;
S2: hydrothermal preparation of g-C3N4ZnO precursor dispersion:
a. preparation of g-C3N4Suspended in waterLiquid: weighing 5.9mg g-C at room temperature3N4Dissolving in 10mL of deionized water, stirring until the solution is fully dissolved to form g-C3N4A suspension;
b. preparing a zinc acetate solution: weighing 1.317g of zinc acetate in 20mL of deionized water at room temperature, and stirring until the zinc acetate is fully dissolved in a glass cup to obtain a zinc acetate solution;
c. preparation of g-C3N4ZnO precursor dispersion: adding g-C into zinc acetate solution3N4Uniformly stirring the suspension, carrying out ultrasonic treatment for 1h, pouring the suspension into 30mL of 0.4mol/L urea solution, uniformly stirring, transferring the solution into a reaction kettle, and reacting at 120-160 ℃ for 8-12 h to obtain g-C3N4A ZnO precursor dispersion;
s3: preparation of g-C3N4ZnO gas sensitive Material: the obtained g-C3N4Cooling ZnO precursor dispersion liquid to room temperature, standing to separate out precipitate, washing for 3 times by deionized water, drying in a drying box at the temperature of 60-100 ℃ for 1-12 h, keeping the temperature at 400-450 ℃ for 2h, cooling to room temperature, and preparing a white powdery gas sensitive material g-C3N4/ZnO。
The invention further provides the g-C3N4The application of the/ZnO gas-sensitive material in the gas-sensitive sensor comprises the following steps: g to C3N4Al coated by gold electrode coated with ZnO gas-sensitive material2O3The surface of the ceramic tube is made into a gas-sensitive sensing element; the preparation method comprises the following steps: taking g-C3N4Grinding ZnO product powder for 20min, adding deionized water, mixing, and grinding to paste, g-C3N4The mass ratio of ZnO to deionized water is 1: (0.5-1.5), and uniformly coating the paste on Al coated with gold electrode2O3And (3) after the surface of the ceramic tube is dried in an oven at 80 ℃ for 5 hours, penetrating the nickel-chromium wire into the composite gold electrode ceramic tube, welding the composite gold electrode ceramic tube on a hexagonal base, and aging the welded element at 300 ℃ for 3 days.
EXAMPLE 1 preparation of g-C3N4ZnO gas-sensitive material
S1: preparing graphite phase carbon nitride: weighing 5g of trimerPlacing cyanamide into a crucible, placing the crucible into a muffle furnace, heating the crucible to 550 ℃ at the heating rate of 5 ℃/min, preserving heat for 5 hours, cooling the crucible to room temperature, taking out the crucible, grinding the crucible, dissolving the cyanamide in absolute ethyl alcohol, performing ultrasonic dispersion, centrifuging the mixture, taking out supernatant to obtain precipitate, repeating the process for three times, and then placing the precipitate into a 60 ℃ drying oven to be dried to obtain yellow powder g-C3N4;
S2: hydrothermal preparation of g-C3N4ZnO precursor dispersion:
a. preparation of g-C3N4Suspension: weighing 5.9mg g-C at room temperature3N4Dissolving in 10mL of deionized water, stirring until the solution is fully dissolved to form g-C3N4A suspension;
b. preparing a zinc acetate solution: weighing 1.317g of zinc acetate in 20mL of deionized water at room temperature, and stirring until the zinc acetate is fully dissolved in a glass cup to obtain a zinc acetate solution;
c. preparation of g-C3N4ZnO precursor dispersion: adding g-C into zinc acetate solution3N4Suspending liquid, evenly stirring, carrying out ultrasonic treatment for 1h, pouring into 30mL of 0.4mol/L urea solution, evenly stirring, transferring into a reaction kettle, and reacting for 12h at 120 ℃ to obtain g-C3N4ZnO precursor dispersion liquid (g-C)3N4Is in the g-C range3N4The mass fraction of ZnO is 1 percent respectively;
s3: preparation of g-C3N4ZnO gas sensitive Material: the obtained g-C3N4Cooling ZnO precursor dispersion to room temperature, standing to separate out precipitate, washing with deionized water for 3 times, drying in a 60 deg.C drying oven for 12h, keeping at 400 deg.C for 2h, cooling to room temperature to obtain white powdery gas sensitive material g-C3N4/ZnO(1%g-C3N4)。
Example 2 preparation of g-C3N4/ZnO gas sensor
Taking g-C3N4Grinding ZnO product powder for 20min, adding deionized water, mixing, and grinding to paste, g-C3N4The mass ratio of ZnO to deionized water is 1: 0.5, homogenizing the obtained pasteEvenly coated on Al coated on gold electrode2O3And (3) after the surface of the ceramic tube is dried in an oven at 80 ℃ for 5 hours, penetrating the nickel-chromium wire into the composite gold electrode ceramic tube, welding the composite gold electrode ceramic tube on a hexagonal base, and aging the welded element at 300 ℃ for 3 days.
Example 3p g-C3N4Characterization of the/ZnO gas-sensitive Material
g-C prepared in example 1 was analyzed by a scanning electron microscope, an X-ray diffractometer, and an X-ray photoelectron spectrometer3N4The physical or chemical characterization of the/ZnO gas-sensitive material is carried out, and the results are respectively shown in figure 1, figure 2 and figure 3:
FIG. 1 shows g-C3N4Scanning electron micrograph of/ZnO gas sensitive material: as can be seen in the figure, g-C3N4the/ZnO is a stacked lamellar structure;
FIG. 2 shows g-C3N4X-ray diffraction spectrum of ZnO gas-sensitive material: as can be seen from the figure, characteristic diffraction peaks corresponding to (100), (002), (101), (102), (110), (103), (200), (112) and (201) crystal planes (JCPDS card No.36-1451) of ZnO of hexagonal wurtzite structure appear at 31.7 °, 34.2 °, 36.3 °, 47.4 °, 56.6 °, 62.8 °, 66.4 °, 67.9 ° and 69.0 °, and g-C is not shown in the figure3N4May be due to g-C in the composite3N4The content of (A) is low;
FIG. 3 is g-C3N4X-ray photoelectron spectrum of ZnO gas sensitive material: the composite material is shown to be composed of four materials of C, N, Zn and O, and six peaks shown in 86.92eV, 285.80eV, 398.47eV, 529.80eV, 1021.58eV and 1044.25eV are respectively assigned to Zn3p, C1s, N1s, O1s, Zn2p3/2 and Zn2p 1/2.
Example 4 p g-C3N4Sensitivity of/ZnO gas-sensitive material
And (3) measuring the sensitivity by adopting a static gas distribution method: g-C prepared in example 2 at an optimum working temperature of 280 deg.C3N4The gas sensor/ZnO is added with 0.24 μ l, 0.48 μ l, 1.2 μ l, 2.4 μ l, 3.6 μ l, 4.8 μ l, 9.6 μ l, and 24 μ l ethanol for testing, and calculated by the formula S ═ Ra/RgSensitivity at the same time, g-C is obtained3N4The sensitivity of the/ZnO product to 5ppm, 10ppm, 25ppm, 75ppm, 100ppm, 200ppm and 500ppm ethanol gas is shown in FIG. 4:
FIG. 4 is a graph of g-C at optimum operating temperature3N4Response-recovery curve of ZnO gas-sensitive material to ethanol gas with different concentrations: as can be seen from the figure, the gas-sensitive material prepared by the invention has shorter response and recovery time to ethanol gas with different concentrations, and has higher sensitivity, 1 percent g-C3N4The sensitivity of the/ZnO to 100ppm of ethanol gas reaches 84.1 at a working temperature of 280 ℃.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments, which are fully applicable in all kinds of fields of application of the invention, and further modifications may readily be effected by those skilled in the art, so that the invention is not limited to the specific details without departing from the general concept defined by the claims and the scope of equivalents.