CN110034363A - A kind of microwave electricity tune bandstop filter based on open-end microstrip line construction - Google Patents
A kind of microwave electricity tune bandstop filter based on open-end microstrip line construction Download PDFInfo
- Publication number
- CN110034363A CN110034363A CN201910269469.8A CN201910269469A CN110034363A CN 110034363 A CN110034363 A CN 110034363A CN 201910269469 A CN201910269469 A CN 201910269469A CN 110034363 A CN110034363 A CN 110034363A
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- Prior art keywords
- microstrip line
- open
- bandstop filter
- electricity tune
- filter based
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
Abstract
The invention discloses a kind of microwave electricity tune bandstop filter based on open-end microstrip line construction realizes the bandreject filtering response of high degree of suppression by the first multiple resonant elements of microstrip line distributed couplings.Meanwhile the third microstrip line of section termination open circuit is connected by the cathode of a varactor D1 in each resonant element, the inductance of metallization VIA introducing can be avoided, is conducive to improve working frequency.DC bias circuit is added in the cathode of varactor D1, by changing DC offset voltage, the capacitance of adjustable varactor D1 is advantageously implemented the high working frequency and high stop band degree of suppression of microwave electricity tune bandstop filter to adjust stop-band frequency response.
Description
Technical field
The present invention relates to microwave device technology more particularly to a kind of microwave electricity tune bands based on open-end microstrip line construction
Hinder filter.
Background technique
Restructural radio-frequency front-end has many advantages, such as to extend and enhance system function, improves level of integrated system and miniaturization, extensively
It is general to be applied to radar and wireless communication system.Microwave electricity tune bandstop filter is the important component of restructural radio-frequency front-end,
For the interference signal in inhibition system.With the traffic rate of wireless communication system and the raising of message capacity, work frequency
Rate is also improving, and traditional 6GHz following frequencies is no longer satisfied application demand.Microstrip line is main in wireless communication system
The transmission line of use.Currently, the working frequency of the existing microwave electricity tune bandstop filter based on microstrip line concentrate on 6GHz with
Lower frequency has that working frequency is lower.
There is a kind of microstrip line microwave electricity tune bandstop filter in the prior art, use terminal short circuit microstrip line construction, becomes
Hold diode to be grounded by metallization VIA.Its adjustable frequency range is 0.66-0.99GHz, and adjustable relative bandwidth is 40%, resistance
The degree of suppression of band is greater than 27dB.The working frequency of this microwave electricity tune bandstop filter is still lower, stopband degree of suppression also compared with
It is low.
Summary of the invention
Present invention is primarily aimed at provide a kind of microwave electricity tune bandreject filtering based on open-end microstrip line construction
Device, with solve working frequency existing for microstrip line microwave electricity tune bandstop filter in the prior art is lower, belt resistance inhibitor system compared with
Low problem.
The present invention is achieved through the following technical solutions:
A kind of microwave electricity tune bandstop filter based on open-end microstrip line construction, including substrate, input port, output
Port, the first microstrip line and several resonant elements, the input port, output port, the first microstrip line and several resonant elements
Installation is on the substrate；
One end of first microstrip line is directly connected to the input port, the other end of first microstrip line and institute
It states output port to be directly connected to, the resonant element is connect with first microstrip lines；
The resonant element includes the second microstrip line, resistance R1, resistance R2, varactor D1 and DC bias circuit,
Second microstrip line and first microstrip lines, one end of one end connection resistance R1 of second microstrip line are described
The anode of the other end connection varactor D1 of second microstrip line, the cathode of varactor D1 connect third microstrip line, and
By the resistance R2 connection DC bias circuit, the third microstrip line open-end, the other end of resistance R1 passes through metal
Change via hole ground connection.
Further, the quantity of the resonant element is even number, if being two-by-two one group, then the two of every group resonant element phase
The central axis of first microstrip line is symmetrical arranged.
Further, first microstrip line, the input port are identical with the characteristic impedance of the output port three.
Further, the characteristic impedance is 50 Ω.
Further, the substrate is the Rogers RT/ for being 2.2 with a thickness of 0.508mm, relative efficiency dielectric constant
5880 substrate of Duroid.
Further, the model MA46H200 of the varactor D1.
Further, a length of 2.75mm of the second microstrip line, width 0.4mm.
Further, the coupling spacing of second microstrip line and first microstrip line is 0.1mm.
Further, a length of 0.4mm of third microstrip line, width 1.5mm.
Compared with prior art, the microwave electricity tune bandreject filtering provided by the invention based on open-end microstrip line construction
Device realizes the bandreject filtering response of high degree of suppression by the first multiple resonant elements of microstrip line distributed couplings.Meanwhile every
The third microstrip line for connecting section termination open circuit in a resonant element by the cathode of a varactor D1, can avoid gold
The inductance that categoryization via hole introduces is conducive to improve working frequency.DC bias circuit is added in the cathode of varactor D1, passes through
Change DC offset voltage, the capacitance of adjustable varactor D1, to adjust stop-band frequency response, is advantageously implemented
The high working frequency and high stop band degree of suppression of microwave electricity tune bandstop filter.
Detailed description of the invention
Fig. 1 is the overall structure of microwave electricity tune bandstop filter of the embodiment of the present invention based on open-end microstrip line construction
Schematic diagram；
Fig. 2 is the size signal of microwave electricity tune bandstop filter of the embodiment of the present invention based on open-end microstrip line construction
Figure；
Fig. 3 is the S11 parameter of microwave electricity tune bandstop filter of the embodiment of the present invention based on open-end microstrip line construction
Analogous diagram；
Fig. 4 is the S21 parameter of microwave electricity tune bandstop filter of the embodiment of the present invention based on open-end microstrip line construction
Analogous diagram；
Fig. 5 is the S11 parameter of microwave electricity tune bandstop filter of the embodiment of the present invention based on open-end microstrip line construction
Test chart；
Fig. 6 is the S21 parameter of microwave electricity tune bandstop filter of the embodiment of the present invention based on open-end microstrip line construction
Test chart.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail.
As shown in Figure 1, the microwave electricity tune bandreject filtering provided in an embodiment of the present invention based on open-end microstrip line construction
Device, including substrate (attached drawing is not shown), input port 1, output port 2, the first microstrip line 3 and several resonant elements 4, input terminal
Mouth 1, output port 2, the first microstrip line 3 and several resonant elements 4 are installed on substrate.
One end of first microstrip line 3 is directly connected to input port 1, and the other end and output port 2 of the first microstrip line 3 are straight
It connects in succession, resonant element 4 is of coupled connections with the first microstrip line 3.
Resonant element 4 includes the second microstrip line 5, resistance R1, resistance R2, varactor D1 and DC bias circuit 7, the
Two microstrip lines 5 are coupled with the first microstrip line 3, one end of one end of the second microstrip line 5 connection resistance R1, the second microstrip line 5 it is another
One end connects the anode of varactor D1, and the cathode of varactor D1 connects third microstrip line 6, and is connected by resistance R2
The other end of DC bias circuit 7,6 open-end of third microstrip line, resistance R1 is grounded by metallization VIA.By third micro-strip
6 open-end of line can avoid the inductance of metallization VIA introducing, be conducive to improve working frequency.
The quantity of resonant element 4 is even number, if being two-by-two one group, then the two of every group resonant element 4 is with respect to the first micro-strip
The central axis of line 3 is symmetrical arranged.Specifically, in the present embodiment, resonant element 4 has 18, if every two is one group, shares
9 groups, every group of two resonant elements 4 are all with respect to the central axis of the first microstrip line 3 (i.e. 3 dashed centre line of the first microstrip line of Fig. 1)
It is symmetrical arranged.
In the present embodiment, the first microstrip line 3, input port 1 are identical with the characteristic impedance of 2 three of output port, characteristic resistance
Anti- is 50 Ω.First microstrip line, 3 width w3 is 1.54mm.
In the present embodiment, substrate is the Rogers RT/ for being 2.2 with a thickness of 0.508mm, relative efficiency dielectric constant
5880 substrate of Duroid.The model MA46H200 of varactor D1.The model diode is MACOM Products.
In the present embodiment, the long l1 of the second microstrip line 5 is 2.75mm, and wide w1 is 0.4mm.Second microstrip line 5 and the first micro-strip
The coupling spacing d1 of line 3 is 0.1mm.Third micro-strip wire length l2 is 0.4mm, and wide w2 is 1.5mm.
Fig. 3 gives the S of the present embodiment microwave electricity tune bandstop filter11Parameters simulation figure.It is micro- that Fig. 4 gives the present embodiment
The S of wave electricity tune bandstop filter21Parameters simulation figure.It can be seen from the figure that when the capacitance of varactor is 4pF, resistance
The centre frequency of band is 11.25GHz, and when the capacitance of varactor is 0.19pF, the centre frequency of stopband is
16.35GHz.Therefore, the frequency tuning range of emulation is 11.25-16.35GHz, and opposite BREATHABLE BANDWIDTH is 37%, and stopband inhibits
Degree is greater than 45dB.
Fig. 5 gives the S of the present embodiment microwave electricity tune bandstop filter11Parameter testing figure.It is micro- that Fig. 6 gives the present embodiment
The S of wave electricity tune bandstop filter21Parameter testing figure.It can be seen from the figure that when the voltage of direct current biasing is 0V, in stopband
Frequency of heart is 11.35GHz, and when the voltage of direct current biasing is 25V, the centre frequency of stopband is 16.5GHz.Therefore, test
Frequency tuning range is 11.35-16.5GHz, and opposite BREATHABLE BANDWIDTH is 37%, and the degree of suppression of stopband is greater than 27dB.
Above-described embodiment is only preferred embodiment, the protection scope being not intended to limit the invention, in spirit of the invention
With any modifications, equivalent replacements, and improvements made within principle etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of microwave electricity tune bandstop filter based on open-end microstrip line construction, which is characterized in that including substrate, input
Port, output port, the first microstrip line and several resonant elements, the input port, output port, the first microstrip line and several
Resonant element is installed on the substrate；
One end of first microstrip line is directly connected to the input port, the other end of first microstrip line with it is described defeated
Exit port is directly connected to, and the resonant element is connect with first microstrip lines；
The resonant element includes the second microstrip line, resistance R1, resistance R2, varactor D1 and DC bias circuit, described
Second microstrip line and first microstrip lines, one end of one end connection resistance R1 of second microstrip line, described second
The anode of the other end connection varactor D1 of microstrip line, the cathode of varactor D1 connects third microstrip line, and passes through
The resistance R2 connection DC bias circuit, the third microstrip line open-end, the other end of resistance R1 was by metallizing
Hole ground connection.
2. the microwave electricity tune bandstop filter based on open-end microstrip line construction as described in claim 1, which is characterized in that
The quantity of the resonant element is even number, if being two-by-two one group, then relatively described first microstrip line of the two of every group resonant element
Central axis be symmetrical arranged.
3. the microwave electricity tune bandstop filter based on open-end microstrip line construction as described in claim 1, which is characterized in that
First microstrip line, the input port are identical with the characteristic impedance of the output port three.
4. the microwave electricity tune bandstop filter based on open-end microstrip line construction as claimed in claim 3, which is characterized in that
The characteristic impedance is 50 Ω.
5. the microwave electricity tune bandstop filter based on open-end microstrip line construction as described in claim 1, which is characterized in that
The substrate is 5880 substrate of Rogers RT/Duroid for being 2.2 with a thickness of 0.508mm, relative efficiency dielectric constant.
6. the microwave electricity tune bandstop filter based on open-end microstrip line construction as described in claim 1, which is characterized in that
The model MA46H200 of the varactor D1.
7. the microwave electricity tune bandstop filter based on open-end microstrip line construction as described in claim 1, which is characterized in that
The a length of 2.75mm of second microstrip line, width 0.4mm.
8. the microwave electricity tune bandstop filter based on open-end microstrip line construction as claimed in claim 7, which is characterized in that
The coupling spacing of second microstrip line and first microstrip line is 0.1mm.
9. the microwave electricity tune bandstop filter based on open-end microstrip line construction as claimed in claim 8, which is characterized in that
The a length of 0.4mm of third microstrip line, width 1.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269469.8A CN110034363B (en) | 2019-04-04 | 2019-04-04 | Microwave electrically tunable band-stop filter based on terminal open-circuit microstrip line structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269469.8A CN110034363B (en) | 2019-04-04 | 2019-04-04 | Microwave electrically tunable band-stop filter based on terminal open-circuit microstrip line structure |
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| CN110034363A true CN110034363A (en) | 2019-07-19 |
| CN110034363B CN110034363B (en) | 2021-01-15 |
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| CN201910269469.8A Active CN110034363B (en) | 2019-04-04 | 2019-04-04 | Microwave electrically tunable band-stop filter based on terminal open-circuit microstrip line structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911786A (en) * | 2019-11-28 | 2020-03-24 | 电子科技大学 | Reconfigurable high-rejection dual-band-stop filter |
| CN113948840A (en) * | 2021-11-03 | 2022-01-18 | 中山大学 | Reconfigurable microwave band-stop filter of miniaturized ultra-wide frequency tuning range |
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| CN101916892A (en) * | 2010-06-29 | 2010-12-15 | 华南理工大学 | Tunable band-stop filter of constant absolute bandwidth based on modular structure |
| CN102354779A (en) * | 2011-09-30 | 2012-02-15 | 北京航空航天大学 | Miniaturized tunable bandstop filter |
| CN102403556A (en) * | 2010-09-10 | 2012-04-04 | 中国科学院物理研究所 | Tunable superconducting filter, and manufacturing method and metal shielding box of tunable superconducting filter |
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| US9786973B2 (en) * | 2014-03-18 | 2017-10-10 | Tdk Corporation | Tunable filter using variable impedance transmission lines |
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| US20180062232A1 (en) * | 2016-08-31 | 2018-03-01 | United States Of America As Represented By Secretary Of The Navy | Frequency Tunable Reflectionless Bandstop Filter using L-Resonators |
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| CN101916892A (en) * | 2010-06-29 | 2010-12-15 | 华南理工大学 | Tunable band-stop filter of constant absolute bandwidth based on modular structure |
| CN102403556A (en) * | 2010-09-10 | 2012-04-04 | 中国科学院物理研究所 | Tunable superconducting filter, and manufacturing method and metal shielding box of tunable superconducting filter |
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| US20180062232A1 (en) * | 2016-08-31 | 2018-03-01 | United States Of America As Represented By Secretary Of The Navy | Frequency Tunable Reflectionless Bandstop Filter using L-Resonators |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911786A (en) * | 2019-11-28 | 2020-03-24 | 电子科技大学 | Reconfigurable high-rejection dual-band-stop filter |
| CN113948840A (en) * | 2021-11-03 | 2022-01-18 | 中山大学 | Reconfigurable microwave band-stop filter of miniaturized ultra-wide frequency tuning range |
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| Publication number | Publication date |
|---|---|
| CN110034363B (en) | 2021-01-15 |
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