CN110032045A - A kind of litho machine - Google Patents
A kind of litho machine Download PDFInfo
- Publication number
- CN110032045A CN110032045A CN201910326298.8A CN201910326298A CN110032045A CN 110032045 A CN110032045 A CN 110032045A CN 201910326298 A CN201910326298 A CN 201910326298A CN 110032045 A CN110032045 A CN 110032045A
- Authority
- CN
- China
- Prior art keywords
- laser
- mask
- chip
- reflecting mirror
- seat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Abstract
The present invention relates to photoetching machine technique field more particularly to a kind of litho machines, including laser and mask seat, chip seat；Wherein laser is made of the first reflecting mirror, the second reflecting mirror, gain media and pump arrangement；First reflecting mirror is total reflection mirror, and the second reflecting mirror is partially reflecting mirror, and the laser that laser generates is exported by the second reflection lens one-shot；Wherein mask seat is arranged on the resonant optical path of the laser, and for installing mask, chip seat is arranged on the output light path of the laser, for installing lithographic wafer.When litho machine works, mask-placement is on the mask seat, and wafer arrangement is on the chip seat；Harmonic light passes through hole on mask, seam completes resonance, is exposed on the laser projection to chip of output to chip.
Description
Technical field
The present invention relates to photoetching machine technique field more particularly to a kind of litho machines.
Background technique
Litho machine is the important and crucial equipment of one kind that modern semiconductors industry needs to use, existing litho machine due to by
It is more and more difficult to further increase lithographic accuracy when lithographic accuracy is much smaller than lithographic wavelength to the influence of light diffraction effect.
And present Optical Coatings for Photolithography is complicated, and technique requires height, and enforcement difficulty is big and cost of implementation is huge, therefore,
It is necessary to a kind of litho machine be provided, to solve problems of the prior art.
Summary of the invention
The purpose of the present invention is to provide a kind of litho machine, by mask is arranged in laser resonant tank it
In, to solve the Diffraction Problems of light, to improve the lithographic accuracy of litho machine.
To achieve the goals above, the present invention provides a kind of litho machines, including laser and mask seat, chip seat；
Mask seat is arranged on the resonant optical path of laser, for installing mask；
Chip seat is arranged on the output light path of laser, for installing lithographic wafer.
Further, when litho machine works, mask-placement is on mask seat, and wafer arrangement is on chip seat；Harmonic light is worn
The hole on mask, seam completion resonance are crossed, chip is exposed on the laser projection to chip of output.
Specifically, laser is made of the first reflecting mirror, the second reflecting mirror, gain media and pump arrangement；
First reflecting mirror is total reflection mirror, and the second reflecting mirror is partially reflecting mirror, and the laser that laser generates passes through second
Reflection lens one-shot output.
It further, further include gain media separate cavities；
Space is isolated into the part of inside and outside of cavity two by gain media separate cavities, gain media be arranged in gain media every
Intracavitary from chamber, chip seat is arranged in outside the chamber of gain media separate cavities.
Specifically, with the second reflecting mirror constitute gain media separate cavities a part, mask seat be arranged in gain media every
It is intracavitary from chamber,
Alternatively,
It is located on part and/or gain media separate cavities on gain media separate cavities on the resonant optical path of laser
Part on the output light path of laser is made of the material to laser-light transparent, so that laser is complete across gain media resonant cavity
At resonance or output, the intracavitary or mask seat that mask seat is arranged in gain media separate cavities is arranged in gain media separate cavities
Chamber outside.
Specifically, the first reflecting mirror and the second reflecting mirror are plane mirror and parallel to each other, the resonant cavity of laser is constituted.
Specifically, when being equipped with chip on being equipped with mask and chip seat on mask seat, chip, mask, the first reflection
Mirror and the second reflecting mirror are parallel to each other two-by-two.
It further, further include convex lens or concavees lens and shutter；
Convex lens or concavees lens are arranged on the output light path of laser, the laser exported from laser by convex lens or
Concavees lens are output on chip, and mask is imaged on the wafer and is zoomed in or out；
Shutter is arranged on the output light path of laser, for controlling the on/off on laser output light road to control pair
The time for exposure of chip.
Another kind litho machine provided by the invention, laser are situated between by the first reflecting mirror, the second reflecting mirror, spectroscope, gain
Matter and pump arrangement composition；
First reflecting mirror and the second reflecting mirror are total reflection mirror, and spectroscope is arranged in the first reflecting mirror and the second reflecting mirror
Between resonant optical path on, the light reflected between the first reflecting mirror and the second reflecting mirror is formed humorous by spectroscope transmission or reflection
Shake circuit, and the laser that laser generates passes through spectroscopical reflection or transmission light splitting output.
Specifically, when being equipped with chip on being equipped with mask and chip seat on mask seat, chip and spectroscopical intersection
Parallel with spectroscopical intersection with mask, chip and spectroscopical angle and mask are equal with spectroscopical angle.
A kind of litho machine of the invention, has the advantages that
1, litho machine of the invention, mask are located in the resonant optical path of laser, and the resonance of laser is influenced by mask,
If occurring shelter on resonant optical path, the laser beam of the corresponding part that is blocked cannot complete resonance, pass through this mechanism
Mask pattern is copied in the output beam of laser；When the output beam of the laser containing mask pattern information projects
When on chip, mask pattern will be recovered on chip, to realize optical patterning；Carrying out optical patterning in this way can be most
Reduce influence of the diffraction to photoetching to big degree.
2, litho machine of the invention, essential part are all realized that structure is simple by plane mirror, also facilitate shortening optical path, are used
The parallelity of laser beam that this mode generates, this is very helpful to the precision for improving photoetching.And plane mirror system
Make that simple, process costs are low.
3, litho machine of the invention, essential part are all realized by plane mirror, due to not by convex lens or concavees lens curvature
Radius or color difference etc. influence, and are also beneficial to improve lithographic accuracy, while also helping and realizing very big exposure area, improve work
Make efficiency.
4, litho machine of the invention also provides the side zoomed in or out by convex lens or concavees lens to imaging
Method has greatly expanded the application range of this litho machine.
5, litho machine of the invention additionally provides a kind of by mask-placement to the intracavitary of laser gain medium separate cavities
Scheme is also of practical significance, and needs the case where producing in enormous quantities especially for a kind of mask, this structure can be such that system becomes
It obtains super compact.
It should be noted that convex lens or concavees lens are not necessarily to the component used in the present invention.That is, such as
We do not use convex lens or concavees lens to fruit, and the resonant cavity of our laser is in the sectional area perpendicular to resonance directions
It is made big, this sectional area is made the problems such as radius of curvature or spherical aberration, color difference will not occurs greatly very much.Specifically, from us
Laser come out a laser not instead of very thin light beam, a very thick patterned light beam, institute band pattern hang down
Directly on the section in laser resonance direction.
Detailed description of the invention
Illustrate the embodiment of the present invention or technical solution in the prior art in order to clearer, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it is clear that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is 1 schematic diagram of embodiment of litho machine of the invention；
Fig. 2 is 2 schematic diagram of embodiment of litho machine of the invention；
Fig. 3 is 3 schematic diagram of embodiment of litho machine of the invention；
Fig. 4 is 4 schematic diagram of embodiment of litho machine of the invention；
Fig. 5 is 5 schematic diagram of embodiment of litho machine of the invention.
In figure: the first reflecting mirror of 11-, the second reflecting mirror of 12-, 21- gain media, 22- pump arrangement, 2- gain media and
It is fast to pump component, 3- gain media separate cavities, the transparent window on 31- gain media separate cavities, 4- convex lens or concavees lens, 5-
Door, 6- spectroscope, 7- mask seat, 8- chip seat.
Specific embodiment
Below in conjunction with the attached drawing in the present invention, technical solution in the embodiment of the present invention carry out it is clear, completely retouch
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, those skilled in the art's all other reality obtained without making creative work
Example is applied, protection scope of the present invention is belonged to.
As shown in Figure 1, a kind of litho machine of the embodiment of the present invention, including laser and mask seat 7, chip seat 8；
Mask seat 7 is arranged on the resonant optical path of laser, for installing mask；
Chip seat 8 is arranged on the output light path of laser, for installing lithographic wafer.
Further, when litho machine works, mask-placement is on mask seat 7, and wafer arrangement is on chip seat 8；Harmonic light
Resonance is completed in hole, seam on mask, is exposed on the laser projection to chip of output to chip.
Specifically, laser is made of the first reflecting mirror 11, the second reflecting mirror 12, gain media 21 and pump arrangement 22；
First reflecting mirror 11 is total reflection mirror, and the second reflecting mirror 12 is partially reflecting mirror, and the laser that laser generates passes through
The light splitting output of second reflecting mirror 12.
It further, further include gain media separate cavities 3；
Space is isolated into the part of inside and outside of cavity two by gain media separate cavities 3, and gain media is arranged in gain media
Separate cavities 3 it is intracavitary, chip seat is arranged in outside the chamber of gain media separate cavities 3.
Specifically, constituting a part of gain media separate cavities 3 with the second reflecting mirror 12, mask seat 7 is arranged in gain Jie
Matter separate cavities 3 it is intracavitary,
Alternatively,
Part and/or gain media separate cavities 3 on gain media separate cavities 3 on the resonant optical path of laser is upper
It is made of in the part on the output light path of laser the material to laser-light transparent, so that laser passes through gain media resonant cavity
3 complete resonance or output, the intracavitary or mask seat that mask seat 7 is arranged in gain media separate cavities 3 be arranged in gain media every
Outside chamber from chamber 3.
Specifically, the first reflecting mirror 11 and the second reflecting mirror 12 are plane mirror and parallel to each other, the humorous of laser is constituted
Shake chamber.
Specifically, chip, mask, first are instead when being equipped with chip on being equipped with mask and chip seat 8 on mask seat 7
It penetrates mirror 11 and the second reflecting mirror 12 is parallel to each other two-by-two.
It further, further include convex lens or concavees lens 4 and shutter 5；
Convex lens or concavees lens 4 are arranged on the output light path of laser, and the laser exported from laser passes through convex lens
Or concavees lens 4 are output on chip, and mask is imaged on the wafer and is zoomed in or out；
Shutter 5 is arranged on the output light path of laser, for controlling the on/off on laser output light road to control pair
The time for exposure of chip.
As shown in figure 3, it is provided by the invention another kind litho machine, laser by the first reflecting mirror 11, the second reflecting mirror 12,
Spectroscope 6, gain media 21 and pump arrangement 22 form；
First reflecting mirror 11 and the second reflecting mirror 12 are total reflection mirror, and spectroscope 6 is arranged in the first reflecting mirror 11 and
On resonant optical path between two-mirror 12, the light reflected between the first reflecting mirror 11 and the second reflecting mirror 12 passes through spectroscope 6
Transmission or reflection forms resonant tank, the reflection or transmission light splitting output that the laser that laser generates passes through spectroscope 6.
Specifically, when being equipped with chip on being equipped with mask and chip seat 8 on mask seat 7, the friendship of chip and spectroscope 6
Line and mask are parallel with the intersection of spectroscope 6, and chip and the angle of spectroscope 6 and mask are equal with the angle of spectroscope 6.
As shown in Fig. 2, another kind litho machine provided by the invention, mask seat 7 are located at the intracavitary of gain media separate cavities 3.
As shown in figure 4, another kind litho machine provided by the invention, gain media and pumping component 2 are located at the first reflecting mirror
11 and second between reflecting mirror 12.This embodiment is primarily adapted for use in the case where gain media is solid.
As shown in figure 5, another kind litho machine provided by the invention, this gives the reflection by spectroscope 6 is real
The example of resonant optical path between existing first reflecting mirror 11 and the second reflecting mirror 12 illustrates that optical path of the invention is very flexibly
, but change ten thousand times without leaving the original aim or stand, mask seat 7 is always located in resonant optical path, and resonance has to pass through mask completion, this is the present invention
Core concept.
The problem of about gain media separate cavities, this separate cavities are the cavitys for being isolated and constraining substance, it is realized
Be 3 dimensions isolation, be mainly used for about beam fluid, especially for constraining the gain media of gas form.If mask cloth
It sets in gain media separate cavities, then replacement mask just needs to open gain media separate cavities, this is quite inconvenient certainly
, and after replacing mask, in general we also need to rearrange gain media.
It should be noted that the resonance directions of laser resonance are positioned at the direction perpendicular to reflecting mirror, light beam is through excessive
Secondary reflection cannot clearly deviate from original position, this is the basic demand for realizing laser.
The problem of about laser resonator, we can understand laser resonator with one-dimensional model, we only need
It is closed with two endpoints.Actual laser resonator is equivalent to by the combination of numerous one-dimensional resonant cavity.Institute
It in side is not need closed with, laser resonator, for material objects such as solid, liquid, gases, it does not constitute a chamber
Body, at least it does not constitute closed cavity.It is corresponding, as long as being able to achieve the unobstructed of optical path, laser resonator can across solid,
Liquid, gas or vacuum.This is also the basic premise that mask can be arranged in laser resonator by we.
The problem of about entirely or partially reflecting, we can not be achieved complete on mathematical meaning or logical meaning certainly
Reflection, herein we even nor with the concept that is physically totally reflected, total reflection mentioned here are to emphasize us
Reflectivity is improved using measure as far as possible.Corresponding part reflection is not offered as that it is very low that reflectivity is designed, on the contrary,
The reflectivity of the partially reflecting mirror of general laser resonator endpoint is all designed relatively high, and part reflection referred to herein is mainly
In order to emphasize to need to stay some projection lights to realize that laser exports.
So-called shutter, specific implementation can be varied, can be machinery, are also possible to a benefit, as long as
It is able to achieve the on-off of optical path.
The nouns such as the similar mask used in the present specification and claims or chip, should not be by narrowization geography
Solution, it is clear that our litho machine can be used to develop and print photo etc., and so-called mask is actually bottom in this case
Piece, so-called chip are exactly sensitive film, and so on, when our litho machine is applied to a variety of different application scenarios, institute
The mask or chip of meaning correspond to different objects, this is readily appreciated that.
Equally obviously wafer die can not be put on our litho machine and carry out photoetching by we, usually will be in quilt
It carves material surface and coats photosensitive material, these common sense are all well known to those skilled in the art and core of the invention thought is closed
System is little, so present specification is not necessarily to carry out expansion narration to it.
The present invention is not specifically limited the gain media of each embodiment, and those skilled in the art can have according to design requirement
Body selection.
It should be pointed out that gain media of the invention can be the arbitrary form of the prior art, including gas, liquid and
Solid, the same present invention does not also limit pump mode, such as electric pump, optical pumping etc. can use, it should be noted that
Pollution problem of the pump light to photoetching is handled well when using optical pumping.
About the form problem of resonant cavity, the resonant cavity provided in an embodiment of the present invention is all reflection type resonant cavity,
This is not offered as the present invention and is only applicable to reflection type resonant cavity.
In the description of the invention, belong to well known details for professionals in the art or structure is saved
Slightly, understanding of the those skilled in the art to core concept of the present invention is had no effect on.About some further implementation details
The various technologies used in problem, such as existing litho machine, such as the fixation of component, damping, transmission, alignment etc. technology, institute
As long as there is the technology used on existing litho machine not conflict with core of the invention thought, it can combine and be formed respectively with the present invention
The technical solution of kind optimization, this is the thing that those skilled in the art is easily accomplished, in the description of the invention no longer
It is unfolded.
The present invention is further described by specific embodiment above, it should be understood that, here specifically
Description, should not be construed as the restriction for the essence of the present invention with range, and one of ordinary skilled in the art is reading this explanation
The various modifications made after book to above-described embodiment belong to the range that the present invention is protected.
Claims (10)
1. a kind of litho machine, which is characterized in that including laser and mask seat, chip seat；
The mask seat is arranged on the resonant optical path of the laser, for installing mask；
The chip seat is arranged on the output light path of the laser, for installing lithographic wafer.
2. litho machine according to claim 1, which is characterized in that when the litho machine works, mask-placement is covered described
On die holder, wafer arrangement is on the chip seat；Harmonic light pass through mask on hole, seam complete resonance, the laser projection of output
Chip is exposed on to chip.
3. litho machine according to claim 1 or 2, which is characterized in that the laser is by the first reflecting mirror, the second reflection
Mirror, gain media and pump arrangement composition；
First reflecting mirror is total reflection mirror, and second reflecting mirror is partially reflecting mirror, the laser that the laser generates
It is exported by second reflection lens one-shot.
4. litho machine according to claim 3, which is characterized in that further include gain media separate cavities；
Space is isolated into the part of inside and outside of cavity two by the gain media separate cavities, and the gain media is arranged in the increasing
Beneficial medium separate cavities it is intracavitary, the chip seat is arranged in outside the chamber of the gain media separate cavities.
5. litho machine according to claim 4, which is characterized in that
A part of gain media separate cavities is constituted with second reflecting mirror, the mask seat is arranged in gain media separate cavities
It is intracavitary,
Alternatively,
Part and/or gain media isolation on the gain media separate cavities on the resonant optical path of the laser
Part on chamber on the output light path of the laser is made of the material to laser-light transparent, so that laser passes through gain
Dielectric resonant chamber completes resonance or output, the mask seat are arranged in the intracavitary or described mask seat of gain media separate cavities
It is arranged in outside the chamber of gain media separate cavities.
6. litho machine according to claim 5, which is characterized in that first reflecting mirror and second reflecting mirror are
Plane mirror and parallel to each other, constitutes the resonant cavity of the laser；
It is the chip, the mask, described when being equipped with chip on being equipped with mask and the chip seat on the mask seat
First reflecting mirror and second reflecting mirror are parallel to each other two-by-two.
7. litho machine according to claim 6, which is characterized in that further include convex lens or concavees lens and shutter；
The convex lens or concavees lens are arranged on the output light path of the laser, and the laser exported from the laser passes through
The convex lens or concavees lens are output on the chip, zoom in or out the imaging of mask on the wafer；
The shutter is arranged on the output light path of the laser, for controlling the on/off on laser output light road to control
Make the time for exposure to chip.
8. litho machine according to claim 1 or 2, which is characterized in that the laser is by the first reflecting mirror, the second reflection
Mirror, spectroscope, gain media and pump arrangement composition；
First reflecting mirror and second reflecting mirror are total reflection mirror, and the spectroscope is arranged in first reflecting mirror
On resonant optical path between second reflecting mirror, the light reflected between first reflecting mirror and second reflecting mirror is logical
Cross the spectroscope transmission or reflection and form resonant tank, the laser that the laser generates by spectroscopical reflection or
Transmission light splitting output.
9. litho machine according to claim 8, which is characterized in that
When being equipped with chip on being equipped with mask and the chip seat on the mask seat, the chip with it is described spectroscopical
Intersection and the mask are parallel with spectroscopical intersection, the chip and spectroscopical angle and the mask and institute
It is equal to state spectroscopical angle.
10. a kind of photolithography method, by mask-placement on the resonant optical path of laser, by wafer arrangement laser output light
On the road；The resonance of laser is influenced by mask, and then mask pattern is copied in the output beam of laser, then will be contained
The Laser Output Beam of mask pattern information projects on chip, and mask pattern is recovered on chip and is photo-etched into realizing
Picture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910326298.8A CN110032045A (en) | 2019-04-23 | 2019-04-23 | A kind of litho machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910326298.8A CN110032045A (en) | 2019-04-23 | 2019-04-23 | A kind of litho machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110032045A true CN110032045A (en) | 2019-07-19 |
Family
ID=67239605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910326298.8A Pending CN110032045A (en) | 2019-04-23 | 2019-04-23 | A kind of litho machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110032045A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110304837A1 (en) * | 2009-02-17 | 2011-12-15 | Carl Zeiss Smt Gmbh | Projection exposure method, projection exposure apparatus, laser radiation source and bandwidth narrowing module for a laser radiation source |
| CN104380205A (en) * | 2012-06-29 | 2015-02-25 | 卡尔蔡司Smt有限责任公司 | Projection exposure apparatus for projection lithography |
| CN105359038A (en) * | 2013-06-18 | 2016-02-24 | Asml荷兰有限公司 | Lithographic method and system |
-
2019
- 2019-04-23 CN CN201910326298.8A patent/CN110032045A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110304837A1 (en) * | 2009-02-17 | 2011-12-15 | Carl Zeiss Smt Gmbh | Projection exposure method, projection exposure apparatus, laser radiation source and bandwidth narrowing module for a laser radiation source |
| CN104380205A (en) * | 2012-06-29 | 2015-02-25 | 卡尔蔡司Smt有限责任公司 | Projection exposure apparatus for projection lithography |
| CN105359038A (en) * | 2013-06-18 | 2016-02-24 | Asml荷兰有限公司 | Lithographic method and system |
Non-Patent Citations (1)
| Title |
|---|
| 樊慧庆: "《电子信息材料》", 30 September 2012 * |
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Application publication date: 20190719 |