CN110031886B - Electron beam current energy density distribution measuring system and method - Google Patents

Electron beam current energy density distribution measuring system and method Download PDF

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CN110031886B
CN110031886B CN201910300519.4A CN201910300519A CN110031886B CN 110031886 B CN110031886 B CN 110031886B CN 201910300519 A CN201910300519 A CN 201910300519A CN 110031886 B CN110031886 B CN 110031886B
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electron beam
energy density
electron
deflection
density distribution
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CN110031886A (en
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林峰
赵德陈
张磊
郭超
马旭龙
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Tianjin Qingyan Zhishu Technology Co ltd
Tsinghua University
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Tianjin Qingyan Zhishu Technology Co ltd
Tsinghua University
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    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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Abstract

The invention discloses a system and a method for measuring energy density distribution of electron beam current, wherein the system comprises: the electron beam generation deflection focusing device is used for controlling the generation, focusing and deflection of the electron beam; the electron beam energy density measuring device is used for measuring the electron beam intensity of a right-angle notch at the top of the electron beam energy density measuring device and recording a deflection signal of the electron beam; the controller is used for controlling the electron beam generating deflection focusing device to generate, focus and deflect the electron beam, and simultaneously controlling the electron beam energy density measuring device to acquire an electron beam intensity signal and record an electron beam deflection signal; the data processing device is used for constructing the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal so as to obtain the electron beam energy density distribution by adopting a second-order differential method. The system simplifies the processing of the measuring device, does not need to assume that the energy density of the electron beam is circularly symmetrical, and can also accurately measure the irregular energy density distribution of the electron beam.

Description

Electron beam current energy density distribution measuring system and method
Technical Field
The invention relates to the technical field of electron beam processing, in particular to a system and a method for measuring energy density distribution of electron beams.
Background
In a number of applications related to electron beam technology, the quality of the electron beam has a crucial impact on the performance of the system, mainly in terms of the focused beam spot size and energy density distribution. Therefore, accurately measuring the energy density distribution and size of the electron beam is an important means for inspecting the quality of the electron beam.
At present, the measuring method of the energy density of the beam spot of the low-energy electron beam mainly comprises a probe type testing method, a threshold energy density testing method, a DIABEAM testing method and the like ([1] cycle, Liufanjun, bridge, electron beam focus, measuring method progress and classification [ J ]. welding, 2004, (01): 5-10). The measurement result of the probe-type test method is related to the shape and surface state of the probe and the secondary electron emission effect, and the accuracy is not high. The threshold energy density test method usually adopts a wedge-shaped block or a metal slit mode to measure the integral value of the energy density of the electron beam, and then calculates the energy density distribution based on the assumption of the Gaussian distribution of the energy density of the electron beam, so that the method is heavily dependent on the assumption of the energy density distribution of the electron beam, and cannot really measure the energy distribution of the electron beam. The DIABEAM test method is to scan a small hole (the diameter is far smaller than the beam diameter of an electron beam and is about 20 μm) by using an electron beam spot, and receive electrons penetrating through the small hole by a Faraday cylinder to obtain the energy density distribution of the electron beam spot.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art.
To this end, an object of the present invention is to provide an electron beam current energy density distribution measuring system.
The invention also aims to provide an electron beam current energy density distribution measuring method.
In order to achieve the above object, the present invention provides an electron beam current energy density distribution measuring system, including: the electron beam generation deflection focusing device is used for controlling the generation, focusing and deflection of the electron beam; the electron beam energy density measuring device comprises a right-angle notch and is used for collecting the intensity of electron beam current of electron beams generated by the electron beam deflection focusing device and leaking through the right-angle notch and recording deflection signals of the electron beams; the controller is used for controlling the electron beam generating deflection focusing device to generate, focus and deflect an electron beam, and simultaneously controlling the electron beam energy density measuring device to acquire the electron beam and record an electron beam deflection signal; and the data processing device is used for constructing the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal so as to obtain the energy density distribution of the electron beam by adopting a second-order differential method.
According to the electron beam energy density distribution measuring system disclosed by the embodiment of the invention, the processing and manufacturing of small-size round holes and narrow slits are avoided, and the processing of a measuring device is simplified; the influence of small-size pore blockage and the like on the measurement precision is avoided, and the measurement precision is improved; the energy density distribution of the electron beam in any shape can be accurately measured without assuming the energy density distribution rule of the electron beam; and a new metal sample is not required to be used every time, so that the test cost is saved.
In addition, the electron beam current energy density distribution measuring system according to the above embodiment of the present invention may further have the following additional technical features:
further, in an embodiment of the present invention, an embodiment of the present invention further includes: the forming platform is arranged below the electron beam deflection focusing device and used for adjusting the height of the electron beam energy density measuring device and ensuring that the right-angle notch is superposed with the focal plane of the electron beam deflection focusing device; the vacuum chamber comprises the forming platform and the electron beam energy density measuring device, and is used for providing a vacuum environment and ensuring the normal propagation of the electron beam.
Further, in one embodiment of the present invention, the electron beam energy density measuring apparatus includes: the electronic baffle comprises the right-angle notch and is used for shielding and screening the electron beam; the electron collecting device is arranged below the electron baffle and used for receiving the electron beams penetrating through the electron baffle; the input end of the signal amplifier is connected with the electronic collecting device and is used for amplifying the weak current signal; and the data acquisition card is connected with the output end of the signal amplifier and is used for recording the input current signal of the signal amplifier.
Further, in an embodiment of the present invention, the electronic baffle including the right-angle notch is configured by intersecting two rectangular metal sheets at 90 °, and the edge thickness of the metal sheet is 0.001mm to 1 mm.
Further, in an embodiment of the present invention, the data acquisition card is further connected to a monitor port of a deflection coil of the electron beam generating deflection focusing device, for acquiring a deflection signal of the electron beam.
Further, in an embodiment of the present invention, the electronic baffle is made of a metal material with a high melting point and good conductivity, such as tungsten, copper, and the like.
In order to achieve the above object, another aspect of the present invention provides a method for measuring electron beam current energy density distribution, including the following steps: controlling an electron beam to scan an electron baffle with a right-angle notch; collecting electron beams leaking through the electron baffle, and recording electron beam deflection signals; converting the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal; and calculating the two-dimensional data matrix by adopting a second order differential method to obtain the energy density distribution of the electron beam.
According to the electron beam energy density distribution measuring method provided by the embodiment of the invention, the processing and manufacturing of small-size round holes and narrow slits are avoided, and the processing of a measuring device is simplified; the influence of small-size pore blockage and the like on the measurement precision is avoided, and the measurement precision is improved; irregular electron beam power density distribution can be accurately measured without assuming that the electron beam energy density is circularly symmetrical; and a new metal sample is not required to be used every time, so that the test cost is saved.
In addition, the electron beam current energy density distribution measuring method according to the above embodiment of the present invention may further have the following additional technical features:
further, in an embodiment of the present invention, the electron beam is scanned sequentially along the parallel equal-pitch scan lines.
Further, in one embodiment of the present invention, during the scanning of the electron beam, when the electron beam spot crosses the edge of the electron shutter, a portion of the electrons pass through the right-angle notch and enter the lower electron collecting device, so that the electron beam spot is decomposed into intensity variations along the x-direction and the y-direction along the right-angle notch.
Further, in one embodiment of the present invention, the electronic baffle is a metal material with a high melting point and good conductivity. Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of an electron beam current energy density distribution measuring system according to an embodiment of the present invention;
fig. 2 is a simulation structure diagram of an electron beam current energy density distribution measuring system according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an electronic bezel with right angle notches according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an electron beam scanning trajectory in a measurement process, wherein (a) is an initial state, (b) is an intermediate state, and (c) is a final state;
fig. 5 is a schematic data processing diagram of an electron beam current energy density distribution measuring system according to an embodiment of the present invention;
fig. 6 is a flowchart of an electron beam current energy density distribution measuring method according to an embodiment of the present invention.
Description of reference numerals: 10-electron beam current energy density distribution measuring system, 1-electron beam generation deflection focusing device, 2-electron beam energy density measuring device, 21-electron baffle, 211-first tungsten thin slice, 212-second tungsten thin slice, 213-cross pressing plate, 214-end cover, 22-electron collecting device, 23-signal amplifier, 24-data collecting card, 3-controller, 4-data processing device, 5-forming platform and 6-vacuum chamber.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The electron beam current energy density distribution measuring system and method according to the embodiment of the present invention will be described below with reference to the drawings, and first, the electron beam current energy density distribution measuring system according to the embodiment of the present invention will be described with reference to the drawings.
Fig. 1 is a schematic structural diagram of an electron beam current energy density distribution measuring system according to an embodiment of the present invention.
As shown in fig. 1, the electron beam current energy density distribution measuring system 10 includes: an electron beam generating deflection focusing device 1, an electron beam energy density measuring device 2, a controller 3, a data processing device 4, a forming platform 5 and a vacuum chamber 6.
The electron beam deflection and focusing device 1 is used for controlling the generation, focusing and deflection of the electron beam. The electron beam energy density measuring device 2 is used for collecting the electron beam generated by the electron beam deflection focusing device 1, measuring the electron beam current which leaks through a right-angle gap in the electron beam energy density measuring device 2, and recording the deflection signal of the electron beam. The controller 3 is used for controlling the electron beam generating deflection focusing device 1 to generate, focus and deflect the electron beam, and simultaneously controlling the electron beam energy density measuring device 2 to collect the electron beam and record the deflection signal of the electron beam. The data processing device 4 is used for constructing the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal so as to obtain the electron beam energy density distribution by adopting a second-order differential method. The forming platform 5 is used for adjusting the height of the electron beam energy density measuring device and ensuring that the right-angle notch is superposed with the focal plane of the electron beam deflection focusing device 1. The vacuum chamber 6 is used for providing a vacuum environment and ensuring normal propagation of the electron beam, wherein the forming platform and the electron beam energy density measuring device are arranged in the vacuum chamber.
Specifically, as shown in fig. 2, the system comprises an electron beam generating deflection focusing device 1 which is located above the shaping platform, is communicated with a vacuum chamber, controls the generation, focusing and deflection of the electron beam, and can completely cover the shaping platform in the scanning range of the electron beam. And the electron beam energy density measuring device 2 is positioned in the vacuum chamber and is arranged on the forming platform. And a controller 3 (not shown) for controlling the electron beam generating deflection focusing device to generate, focus and deflect the electron beam, and for controlling the electron beam energy density measuring device to collect the electron signal and the electron beam deflection signal. And a data processing device 4 (not shown) for constructing the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal, so as to obtain the electron beam energy density distribution by calculation by using a second-order differential method. And a forming platform 5 which is positioned in the vacuum chamber and can move up and down along the height direction. And the vacuum chamber 6 is used for providing a vacuum environment and ensuring normal propagation of the electron beam.
The electron beam deflection focusing device 1 controls the electron beam to scan sequentially along the mutually parallel equidistant scanning lines.
Further, in one embodiment of the present invention, the electron beam energy density measuring apparatus 2 includes: an electronic baffle plate 21, an electronic collecting device 22, a signal amplifier 23 and a data acquisition card 24.
Specifically, as shown in fig. 2, the electron beam energy density measuring device includes an electron blocking plate 21, which is located above an electron collecting device 22 and has a notch with a right-angled edge for blocking and screening electrons; an electron collecting device 22 (i.e., an electron collecting cylinder) capable of receiving electrons passing through the opening of the electron blocking plate and insulated from the electron blocking plate; the input end of the signal amplifier 23 is connected with the electronic collecting cylinder 22 and is used for amplifying weak current signals, and the output end of the signal amplifier is connected with the data acquisition card 24; and a data acquisition card 24, which is connected with a deflection coil monitoring port of the electron beam deflection focusing device 1 in addition to recording the current signal input by the current amplifier, and acquires the deflection signal of the electron beam.
In the embodiment of the invention, the two rectangular metal sheets are crossed at 90 degrees to construct the electronic baffle with the right-angle notch, so that the processing difficulty of the electron beam energy density distribution measuring device is reduced, and the measuring precision is improved. The thickness of the edge of the metal sheet is 0.001 mm-1 mm, and the electronic baffle is made of metal materials with high melting point and good conductivity, such as tungsten, copper and the like.
Specifically, as shown in fig. 3, a circular hole with a diameter of 5mm is formed in the center of the end cap 214 above the electron collecting tube 22, two first and second elongated tungsten sheets 211 and 212 with high side flatness are selected, the thickness of each sheet is 0.1mm, the two tungsten sheets are fixed on the end cap 214 in a right-angle crossing manner, and the vertex of the right angle is located at the center of the circular hole. In the actual test process, the included angle of the two tungsten sheets is accurately adjusted through auxiliary instruments such as a square gauge and the like, and after the included angle is adjusted, the two sheets are fixed by the cross-shaped pressing plate 213 to form the electronic baffle with a right-angle notch.
It should be noted that, in the embodiment of the present invention, a metal round tube with a higher aspect ratio is used as an electron receiver to collect the passing electrons, so as to weaken the influence of secondary electron emission and the like on the measurement of the electron beam current signal.
Specifically, the electron collecting device 22 functions to collect electrons that pass through the right-angle notch, but the electrons react with the receiver surface to emit secondary electrons and backscattered electrons, resulting in a reduction in signal strength. In order to attenuate the influence, a metal cylinder with a large length-diameter ratio is arranged below the electron beam energy density testing device so as to reduce the probability of secondary electrons and scattered electrons escaping out of the collector and attenuate the influence of the secondary electrons and backscattered electrons on the measurement of the current signal of the electron beam.
For example, as shown in fig. 4(a), the electron beam deflecting and focusing device controls the electron beam to scan in one direction along the x direction, after scanning a line segment, the electron beam returns to the left starting point, and the electron beam is shifted in the y direction by a point distance to the forward direction, and continues to move along the x direction, and the process is repeated in a circulating manner until all the electron beam spots cross the edge of the electron barrier, enter the right-angle notch, and are captured by the electron collecting device, and the electron beam spots are discretized along the x and y directions by the barrier with the right-angle notch, as shown in fig. 4(c), and simultaneously, the data acquisition card is used to record the electron intensity passing through the right-angle notch and the deflection signal of the electron. The method comprises the steps of reflecting the position information of an electron beam according to the fact that a deflection signal of the electron beam comprises signals of an x deflection coil and a y deflection coil, calculating the position of a scanning point of the electron beam based on a deflection monitoring signal, and mapping a one-dimensional time sequence signal into a two-dimensional data matrix according to the relative position of the scanning point. Finally, the energy density distribution of the electron beam is calculated and obtained in the data processing device 4 by adopting a second order differential method.
Specifically, the calculation process of the data processing apparatus is: assuming that the current density distribution function of the electron beam is f (x, y), the power density distribution function is g (x, y) ═ UaF (x, y), wherein UaIs the electron beam acceleration voltage. In general, the distance between the points where the electron beam moves along the x-direction and the y-direction is Δ d, which is actually equivalent to the grid division of the electron beam spot with Δ d as the length and width, the sampling signal is a time series, denoted as I (t), and the signal is position-dependent and can be converted into a two-dimensional spatially resolved signal, denoted as I (I, j), or
Figure BDA0002028079030000051
The discretization of the above formula can be obtained by adopting a point-by-point scanning mode
f(i,j)=I(i+1,j+1)+I(i,j)-I(i+1,j)-I(i,j+1)。
Based on the equation, the energy density distribution of the electron beam spot can be obtained by simple calculation, and fig. 5 is a schematic diagram of the second order difference method.
According to the electron beam current energy density distribution measuring system provided by the embodiment of the invention, the processing and manufacturing of small-size round holes and narrow slits are avoided, and the processing of a measuring device is simplified; the influence of small-size pore blockage and the like on the measurement precision is avoided, and the measurement precision is improved; the energy density distribution of the electron beam in any shape can be accurately measured without assuming the energy density distribution rule of the electron beam; and a new metal sample is not required to be used every time, so that the test cost is saved.
Next, a description is given of an electron beam current energy density distribution measuring method according to an embodiment of the present invention with reference to the drawings.
Fig. 6 is a flow chart of an electron beam current energy density distribution measuring method according to an embodiment of the present invention.
As shown in fig. 6, the method for measuring the energy density distribution of the electron beam includes the following steps:
in step S301, the electron beam is controlled to scan the electron shutter with the right-angle notch.
Further, in one embodiment of the present invention, the electron beam scanning is such that the electron beams are sequentially scanned along equally spaced scan lines that are parallel to each other.
Specifically, as shown in fig. 4(a), the electron beam scans in one direction along the x direction, returns to the left starting point after scanning a line segment, shifts by one dot pitch in the y direction toward the advancing direction, continues to move along the x direction, and repeats in a cycle until all electron beam spots cross the edge of the electron blocking plate, enter the right-angle notch, and are captured by the electron collecting device, as shown in fig. 4 (c).
As shown in fig. 4, it should be noted that the energy density testing apparatus 2 is equipped with an electronic shutter having a right-angle notch.
Further, in one embodiment of the present invention, during the electron beam scanning, when the electron beam spot crosses the edge of the electron shutter, a portion of the electrons pass through the right angle notch into the underlying electron collecting device, causing the electron beam spot to be resolved into intensity variations along the x and y directions of the right angle notch of the electron shutter.
That is, during scanning, when the beam spot crosses the edge of the electron shutter, part of the electrons pass through the right angle notch into the electron collection bucket below. The resulting electron beam spot is decomposed into intensity variations in the x and y directions along the right angle notch
In step S302, the electron beam current intensity leaking through the electron shutter is collected, and the electron beam deflection signal is recorded.
In other words, while the electron beam raster scans, the electron beam energy measuring device measures the amount of electrons leaking through the right-angle edge, and the data acquisition card records the intensity of the electrons passing through the right-angle notch and the deflection signal of the electron beam collected from the electron beam deflection focusing device.
Further, in an embodiment of the present invention, the electron beam sweeps across the right-angle gap, a part of electrons enters the electron collecting barrel through the right-angle gap to generate a weak current signal, and the current signal is amplified by the signal amplifier and then input to the data collecting card, wherein the current signal is proportional to the number of electrons entering the electron collecting device.
The deflection signal of the electron beam comprises signals of an x deflection coil and a y deflection coil, reflects the position information of the electron beam, and can calculate the position of a scanning point of the electron beam based on the deflection monitoring signal.
In step S303, the electron beam intensity signal is converted into a two-dimensional data matrix according to the electron beam deflection signal.
Specifically, the scanning point coordinates of the electron beam are calculated according to the monitored electron beam deflection signals, and then the one-dimensional time sequence signals are mapped into a two-dimensional data matrix according to the relative position of the scanning point.
In step S304, the two-dimensional data matrix is calculated using a second order differential method to obtain an electron beam energy density distribution.
Specifically, assuming that the current density distribution function of the electron beam is f (x, y), the power density distribution function is g (x, y) ═ UaF (x, y), wherein UaIs the electron beam acceleration voltage. In general, the distance between the points where the electron beam moves along the x-direction and the y-direction is Δ d, which is actually equivalent to the grid division of the electron beam spot with Δ d as the length and width, the sampling signal is a time series, denoted as I (t), and the signal is position-dependent and can be converted into a two-dimensional spatially resolved signal, denoted as I (I, j), or
Figure BDA0002028079030000071
The discretization of the above formula can be obtained by adopting a point-by-point scanning mode
f(i,j)=I(i+1,j+1)+I(i,j)-I(i+1,j)-I(i,j+1)。
Based on the equation, the energy density distribution of the electron beam spot can be obtained by simple calculation, and fig. 5 is a schematic diagram of the second order difference method.
It should be noted that the foregoing explanation of the embodiment of the electron beam current energy density distribution measuring system is also applicable to this method, and will not be described herein again.
According to the electron beam current energy density distribution measuring method provided by the embodiment of the invention, the processing and manufacturing of small-size round holes and narrow slits are avoided, and the processing of a measuring device is simplified; the influence of small-size pore blockage and the like on the measurement precision is avoided, and the measurement precision is improved; the energy density distribution of the electron beam in any shape can be accurately measured without assuming the energy density distribution rule of the electron beam; and a new metal sample is not required to be used every time, so that the test cost is saved.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (10)

1. An electron beam current energy density distribution measuring system, comprising:
the electron beam generation deflection focusing device is used for controlling the generation, focusing and deflection of the electron beam;
the electron beam energy density measuring device comprises a right-angle notch and is used for collecting the intensity of electron beam current of electron beams generated by the electron beam deflection focusing device and leaking through the right-angle notch and recording deflection signals of the electron beams;
the controller is used for controlling the electron beam generating deflection focusing device to generate, focus and deflect electron beams, and simultaneously controlling the electron beam energy density measuring device to acquire the electron beam intensity and record electron beam deflection signals; and
and the data processing device is used for constructing the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal so as to obtain the energy density distribution of the electron beam by adopting a second-order differential method.
2. The electron beam current energy density distribution measuring system according to claim 1, further comprising:
the forming platform is arranged below the electron beam deflection focusing device and used for adjusting the height of the electron beam energy density measuring device and ensuring that the right-angle notch is superposed with the focal plane of the electron beam deflection focusing device;
and the vacuum chamber is used for providing a vacuum environment and ensuring the normal propagation of the electron beam, wherein the forming platform and the electron beam energy density measuring device are arranged in the vacuum chamber.
3. The electron beam current energy density distribution measuring system according to claim 1, wherein the electron beam energy density measuring device comprises:
the electronic baffle comprises the right-angle notch and is used for shielding and screening the electron beam;
the electron collecting device is arranged below the electron baffle and used for receiving the electron beams penetrating through the electron baffle;
the input end of the signal amplifier is connected with the electronic collecting device and is used for amplifying the weak current signal; and
and the data acquisition card is connected with the output end of the signal amplifier and is used for recording the input current signal of the signal amplifier.
4. The electron beam current energy density distribution measuring system according to claim 3, wherein the electron blocking plate including the right-angle notch is constructed by intersecting two rectangular metal sheets at 90 °, and the thickness of the edge of the metal sheet is 0.001mm to 1 mm.
5. The electron beam current energy density distribution measuring system according to claim 3, wherein the electron blocking plate is a metal material having a high melting point and good conductivity.
6. The system for measuring the energy density distribution of electron beam current according to claim 3, wherein the data acquisition card is further connected to a monitor port of a deflection coil of the device for focusing the deflection of electron beam generation for acquiring the deflection signal of the electron beam.
7. The method for measuring the energy density distribution of the electron beam is characterized by comprising the following steps of:
controlling an electron beam to scan an electron baffle with a right-angle notch;
collecting the intensity of electron beam current leaking through the electron baffle, and recording electron beam deflection signals;
converting the electron beam intensity signal into a two-dimensional data matrix according to the electron beam deflection signal; and
and calculating the two-dimensional data matrix by adopting a second order differential method to obtain the energy density distribution of the electron beam.
8. The method of claim 7, wherein the electron beam is scanned in such a manner that the electron beams are sequentially scanned along equally spaced scan lines parallel to each other.
9. The method of claim 7, wherein when the electron beam spot passes over the edge of the electron shutter during the scanning of the electron beam, a portion of the electrons pass through the right-angle notch and enter the lower electron collecting device, so that the electron beam spot is decomposed into intensity variations along the x-direction and y-direction of the right-angle notch.
10. The method of claim 9, wherein the electron beam current density distribution is measured by using a metal material having a high melting point and good conductivity as the electron blocking plate.
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Publication number Priority date Publication date Assignee Title
US5382895A (en) * 1992-12-28 1995-01-17 Regents Of The University Of California System for tomographic determination of the power distribution in electron beams
EP1207407A2 (en) * 1995-04-07 2002-05-22 Rikagaku Kenkyusho Radiation beam position monitor and position measurement method
US6300755B1 (en) * 1999-05-26 2001-10-09 Regents Of The University Of California Enhanced modified faraday cup for determination of power density distribution of electron beams
US7902503B2 (en) * 2008-08-08 2011-03-08 Lawrence Livermore National Security, Llc Slit disk for modified faraday cup diagnostic for determining power density of electron and ion beams
US8791426B2 (en) * 2009-11-24 2014-07-29 Lawrence Livermore National Security, Llc. Electron beam diagnostic system using computed tomography and an annular sensor
CN102353978B (en) * 2011-06-30 2013-01-02 南京理工大学 Faraday cup sensing device used in electron beam processing beam quality test
CN102436009B (en) * 2011-08-31 2013-06-05 南京理工大学 Differential testing method of power density distribution of electron beam
CN103630925B (en) * 2013-11-20 2016-03-02 南京理工大学 The yardstick scaling method of electronic beam section power density distribution signal
CN103605147B (en) * 2013-11-22 2016-02-03 中国航空工业集团公司北京航空制造工程研究所 Based on assay method and the system of the multi-dimensional electronic beam energy density of edge integration
CN104360374A (en) * 2014-12-02 2015-02-18 泰州学院 Processing method for quantitative measurement numerical value of electron beam energy density distribution
CN106249274A (en) * 2016-08-23 2016-12-21 中国科学院等离子体物理研究所 A kind of method of on-line measurement high-power particle beam beam power density distribution

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