CN110031668A - Current measuring device based on TMR tunnel magnetoresistive - Google Patents

Current measuring device based on TMR tunnel magnetoresistive Download PDF

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Publication number
CN110031668A
CN110031668A CN201910397949.2A CN201910397949A CN110031668A CN 110031668 A CN110031668 A CN 110031668A CN 201910397949 A CN201910397949 A CN 201910397949A CN 110031668 A CN110031668 A CN 110031668A
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CN
China
Prior art keywords
tmr
chip
microcontroller
input terminal
output end
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910397949.2A
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Chinese (zh)
Inventor
张又文
王邦彦
魏邦达
杨帆
高兵
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Chongqing University
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Chongqing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing University filed Critical Chongqing University
Priority to CN201910397949.2A priority Critical patent/CN110031668A/en
Publication of CN110031668A publication Critical patent/CN110031668A/en
Priority to CN202010366636.3A priority patent/CN111337733B/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/12Measuring magnetic properties of articles or specimens of solids or fluids

Abstract

A kind of current measuring device based on TMR tunnel magnetoresistive provided by the invention, including TMR chip array, signal processing circuit, microcontroller and display;The TMR chip array is set in space locating for measured conductor, the output end of the TMR chip array and the input terminal of signal processing circuit connect, the output end of the signal processing circuit and the input terminal of microcontroller connect, the display output end of the microcontroller and the input terminal of display connect, pass through above structure, it can be realized and non-contact measurement is carried out to the conductor current in power distribution network, it avoids impacting transmission line of electricity and security risk, and interference present in measurement process can be effectively removed, ensure measurement accuracy, so that measurement parameter accurately instructs the safety of power grid, stable operation.

Description

Current measuring device based on TMR tunnel magnetoresistive
Technical field
The present invention relates to a kind of current measuring device more particularly to a kind of current measuring devices based on TMR tunnel magnetoresistive.
Background technique
With the continuous propulsion that smart grid is built, power grid generates the various Detection & Controling electrical equipments that can be realized Great demand, and realize that the precondition of smart grid real-time monitoring and control is that have advanced sensing and measurement skill Art is as support.
In the prior art, contact or contactless measurement are all made of for the current measurement of the conductors such as transmission line of electricity Mode, wherein for contact in the presence of needing to be electrically connected with measured conductor, this mode has not only broken up the route of former conductor Structure it is even more important to be so that transmission line of electricity is there are uncertain operational safety risk: during contact type measurement for The person of staff causes great security risk;And in existing non-contact type measuring device, there is interference greatly, as a result not Accurate defect.
Summary of the invention
In view of this, can be realized the object of the present invention is to provide a kind of current measuring device based on TMR tunnel magnetoresistive Non-contact measurement is carried out to the conductor current in power distribution network, avoids impacting transmission line of electricity and security risk, and Interference present in measurement process can be effectively removed, it is ensured that measurement accuracy, so that measurement parameter accurately instructs power grid Safe and stable operation.
A kind of current measuring device based on TMR tunnel magnetoresistive provided by the invention, including at TMR chip array, signal Manage circuit, microcontroller and display;
The TMR chip array is set in space locating for measured conductor, the output end and signal of the TMR chip array The input terminal of processing circuit connects, and the output end of the signal processing circuit and the input terminal of microcontroller connect, the micro-control The display output end of device processed and the input terminal of display connect.
Further, the TMR chip array include 4 TMR chips: TMR chip I, TMR chip II, TMR chip III and TMR chip IV, 4 TMR chips are in same plane and rectangular array is arranged, 4 TMR chips are located at 4 rectangles Vertex.
Further, line and measured conductor to the diagonal line crosspoint of rectangular array of the measured conductor to TMR chip I Line between angle be 45 degree;Measured conductor to TMR chip II line and measured conductor to rectangular array diagonal line Angle between the line in crosspoint is 45 degree.
Further, the microcontroller measures electric current according to the following method:
By the magnetic field strength B after the energization of TMR chip array measurement measured conductor;
Magnetic field-current relationship is searched according to magnetic field strength and corresponds to table, obtains the electric current of measured conductor;
Wherein, magnetic field strength converts obtain according to the following formula: B=(B1-B2)/2。
Further, the signal processing circuit includes differential signal conversion circuit and bias treatment circuit;
The differential signal conversion circuit, input terminal are connect with the output end of TMR chip, for exporting TMR chip Differential signal be converted to single-ended signal and export;
The bias treatment circuit, input terminal are connect with the output end of differential signal conversion circuit, are used for single-ended letter It number is converted to positive voltage signal and is input in microcontroller.
It further, further include power supply unit, said supply unit includes battery and voltage conversion circuit, the electric power storage The output end in pond and the input terminal of voltage conversion circuit connect, and the direct current that the voltage conversion circuit exports battery is distinguished It is converted into 12V, 1V and 3.3V direct current, 12V DC electricity is powered to differential signal conversion circuit and bias treatment circuit, and 1V is straight Galvanic electricity is powered to TMR chip, and 3.3V direct current is powered to microcontroller.
It further, further include for installing signal processing circuit, microcontroller and the shell of display, the shell is adopted It is made of high permeability material, the TMR chip array is fixedly installed on outside shell by mounting bracket.
Beneficial effects of the present invention: by means of the invention it is possible to realize contactless to the conductor current progress in power distribution network Measurement, avoids impacting transmission line of electricity and security risk, and can effectively remove interference present in measurement process, Ensure measurement accuracy, so that measurement parameter accurately instructs the safe and stable operation of power grid.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and examples:
Fig. 1 is electrical structure schematic diagram of the invention.
Fig. 2 is array structure schematic diagram of the invention.
Magnetic field schematic diagram when Fig. 3 is present invention measurement.
Fig. 4 is schematic diagram of housing structure of the invention.
Specific embodiment
Further description is made to the present invention below in conjunction with Figure of description, as shown in the figure:
A kind of current measuring device based on TMR tunnel magnetoresistive provided by the invention, including at TMR chip array 7, signal Manage circuit, microcontroller and display 8;
The TMR chip array is set in space locating for measured conductor 6, the output end and letter of the TMR chip array The input terminal connection of number processing circuit, the output end of the signal processing circuit and the input terminal of microcontroller connect, described micro- The display output end of controller and the input terminal of display connect, and by above structure, can be realized to the conductor in power distribution network Electric current carries out non-contact measurement, avoids impacting transmission line of electricity and security risk, and can effectively remove measurement Existing interference in the process, it is ensured that measurement accuracy, so that measurement parameter accurately instructs the safe and stable operation of power grid.
In the present embodiment, the TMR chip array includes 4 TMR chips: TMR chip I 1, TMR chip II 2, TMR chip III 3 and TMR chip, IV 4,4 TMR chips are in same plane and rectangular array is arranged, 4 TMR chips are located at The vertex of 4 rectangles.
Wherein, line and measured conductor to the diagonal line crosspoint of rectangular array of the measured conductor to TMR chip I Angle between line is 45 degree;Measured conductor is handed over to the line of TMR chip II and the diagonal line of measured conductor to rectangular array Angle between the line of crunode is 45 degree.The opposite position of Accurate Calibration TMR chip array 7 and measured conductor 6 when mounting device Distance is set, later further according to chip output characteristics, obtains each chip output voltage and size of current in measured conductor 6 in array Relationship.In conjunction with the voltage signal gain and processing in signal processing circuit, corresponding micro-controller program algorithm is write, in journey The program of removal external magnetic field interference is write in sequence algorithm based on 7 structure of TMR chip array, and carries out program using fft algorithm Denoising.Later after device is correctly installed, measurement 6 surrounding magnetic field of measured conductor of TMR chip array 7, output voltage signal, Voltage signal inputs microcontroller through signal processing circuit, and final process obtains accurate measured conductor current value and in display It is shown on unit 8.
In the present embodiment, as shown in Figure 2: the microcontroller measures electric current according to the following method: in above-mentioned array, point It is two groups, TMR chip I 1, TMR chip II 2 are one group, and TMR chip III 3 and TMR chip IV 4 are one group, carry out magnetic field respectively Calculating;
By the magnetic field strength B after the energization of TMR chip array measurement measured conductor;
Magnetic field-current relationship is searched according to magnetic field strength and corresponds to table, obtains the electric current of measured conductor;
Wherein, by taking TMR chip I 1 and TMR chip II 2 as an example: magnetic field strength converts obtain according to the following formula: B=(B1- B2)/2;Wherein, B1For the magnetic induction intensity on I 1 sensitive direction of TMR chip, B2For the magnetic strength on II 2 sensitive direction of TMR chip Answer intensity;Wherein, B1=BS+B;B2=BS-B;Pass through B2And B1Two formulas subtract each other, propose environmental disturbances magnetic field BS
In the present embodiment, the signal processing circuit includes differential signal conversion circuit and bias treatment circuit;
The differential signal conversion circuit, input terminal are connect with the output end of TMR chip, for exporting TMR chip Differential signal be converted to single-ended signal and export;
The bias treatment circuit, input terminal are connect with the output end of differential signal conversion circuit, are used for single-ended letter It number is converted to positive voltage signal and is input in microcontroller, since TMR chip array is four, signal processing circuit It also is four.
It further include power supply unit in the present embodiment, said supply unit includes battery and voltage conversion circuit, described The output end of battery and the input terminal of voltage conversion circuit connect, the direct current that the voltage conversion circuit exports battery It is converted into 12V, 1V and 3.3V direct current respectively, 12V DC electricity is powered to differential signal conversion circuit and bias treatment circuit, 1V direct current is powered to TMR chip, and 3.3V direct current is powered to microcontroller.
It further include for installing signal processing circuit, microcontroller and the shell of display, the shell in the present embodiment Body is made of high permeability material, and the TMR chip array is fixedly installed on outside shell by mounting bracket.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this In the scope of the claims of invention.

Claims (7)

1. a kind of current measuring device based on TMR tunnel magnetoresistive, it is characterised in that: including TMR chip array, signal processing electricity Road, microcontroller and display;
The TMR chip array is set in space locating for measured conductor, the output end and signal processing of the TMR chip array The input terminal of circuit connects, and the output end of the signal processing circuit and the input terminal of microcontroller connect, the microcontroller Display output end and display input terminal connect.
2. the current measuring device according to claim 1 based on TMR tunnel magnetoresistive, it is characterised in that: the TMR chip battle array Column include 4 TMR chips: TMR chip I, TMR chip II, TMR chip III and TMR chip IV, and 4 TMR chips are in same In plane and rectangular array is arranged, 4 TMR chips are located at the vertex of 4 rectangles.
3. the current measuring device according to claim 2 based on TMR tunnel magnetoresistive, it is characterised in that: the measured conductor To TMR chip I line and measured conductor to the angle between the line in the diagonal line crosspoint of rectangular array be 45 degree;It is tested Conductor to TMR chip II line and measured conductor to the angle between the line in the diagonal line crosspoint of rectangular array be 45 Degree.
4. the current measuring device according to claim 3 based on TMR tunnel magnetoresistive, it is characterised in that: the microcontroller Electric current is measured according to the following method:
By the magnetic field strength B after the energization of TMR chip array measurement measured conductor;
Magnetic field-current relationship is searched according to magnetic field strength and corresponds to table, obtains the electric current of measured conductor;
Wherein, magnetic field strength converts obtain according to the following formula: B=(B1-B2)/2。
5. the current measuring device according to claim 3 based on TMR tunnel magnetoresistive, it is characterised in that: the signal processing Circuit includes differential signal conversion circuit and bias treatment circuit;
The differential signal conversion circuit, input terminal are connect with the output end of TMR chip, the difference for exporting TMR chip Sub-signal is converted to single-ended signal and exports;
The bias treatment circuit, input terminal are connect with the output end of differential signal conversion circuit, for turning single-ended signal It is changed to positive voltage signal and is input in microcontroller.
6. the current measuring device according to claim 5 based on TMR tunnel magnetoresistive, it is characterised in that: further include that power supply is single Member, said supply unit include battery and voltage conversion circuit, the output end of the battery and voltage conversion circuit The direct current that battery exports is converted into 12V, 1V and 3.3V direct current by input terminal connection, the voltage conversion circuit respectively Electricity, 12V DC electricity are powered to differential signal conversion circuit and bias treatment circuit, and 1V direct current is powered to TMR chip, and 3.3V is straight Galvanic electricity is powered to microcontroller.
7. the current measuring device according to claim 1 based on TMR tunnel magnetoresistive, it is characterised in that: further include for pacifying The shell of signal processing circuit, microcontroller and display is filled, the shell is made of high permeability material, the TMR core Chip arrays are fixedly installed on outside shell by mounting bracket.
CN201910397949.2A 2019-05-14 2019-05-14 Current measuring device based on TMR tunnel magnetoresistive Pending CN110031668A (en)

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CN202010366636.3A CN111337733B (en) 2019-05-14 2020-04-30 TMR-based busbar current and magnetic field intensity measuring device

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CN111337733A (en) * 2019-05-14 2020-06-26 重庆大学 TMR-based busbar current and magnetic field intensity measuring device
CN112964928A (en) * 2021-02-24 2021-06-15 优利德科技(中国)股份有限公司 Clamp-on ammeter without magnetism collecting iron core and automatic balance adjusting method
CN113325228A (en) * 2021-06-04 2021-08-31 江苏大学 Single-side current detection device and method based on magnetoresistive effect sensor array
CN113391116A (en) * 2021-03-17 2021-09-14 清华大学 Sensor array for measuring bus current

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CN111337733B (en) * 2019-05-14 2022-01-28 重庆大学 TMR-based busbar current and magnetic field intensity measuring device
CN112964928A (en) * 2021-02-24 2021-06-15 优利德科技(中国)股份有限公司 Clamp-on ammeter without magnetism collecting iron core and automatic balance adjusting method
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