CN110031668A - Current measuring device based on TMR tunnel magnetoresistive - Google Patents
Current measuring device based on TMR tunnel magnetoresistive Download PDFInfo
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- CN110031668A CN110031668A CN201910397949.2A CN201910397949A CN110031668A CN 110031668 A CN110031668 A CN 110031668A CN 201910397949 A CN201910397949 A CN 201910397949A CN 110031668 A CN110031668 A CN 110031668A
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- tmr
- chip
- microcontroller
- input terminal
- output end
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
Abstract
A kind of current measuring device based on TMR tunnel magnetoresistive provided by the invention, including TMR chip array, signal processing circuit, microcontroller and display;The TMR chip array is set in space locating for measured conductor, the output end of the TMR chip array and the input terminal of signal processing circuit connect, the output end of the signal processing circuit and the input terminal of microcontroller connect, the display output end of the microcontroller and the input terminal of display connect, pass through above structure, it can be realized and non-contact measurement is carried out to the conductor current in power distribution network, it avoids impacting transmission line of electricity and security risk, and interference present in measurement process can be effectively removed, ensure measurement accuracy, so that measurement parameter accurately instructs the safety of power grid, stable operation.
Description
Technical field
The present invention relates to a kind of current measuring device more particularly to a kind of current measuring devices based on TMR tunnel magnetoresistive.
Background technique
With the continuous propulsion that smart grid is built, power grid generates the various Detection & Controling electrical equipments that can be realized
Great demand, and realize that the precondition of smart grid real-time monitoring and control is that have advanced sensing and measurement skill
Art is as support.
In the prior art, contact or contactless measurement are all made of for the current measurement of the conductors such as transmission line of electricity
Mode, wherein for contact in the presence of needing to be electrically connected with measured conductor, this mode has not only broken up the route of former conductor
Structure it is even more important to be so that transmission line of electricity is there are uncertain operational safety risk: during contact type measurement for
The person of staff causes great security risk;And in existing non-contact type measuring device, there is interference greatly, as a result not
Accurate defect.
Summary of the invention
In view of this, can be realized the object of the present invention is to provide a kind of current measuring device based on TMR tunnel magnetoresistive
Non-contact measurement is carried out to the conductor current in power distribution network, avoids impacting transmission line of electricity and security risk, and
Interference present in measurement process can be effectively removed, it is ensured that measurement accuracy, so that measurement parameter accurately instructs power grid
Safe and stable operation.
A kind of current measuring device based on TMR tunnel magnetoresistive provided by the invention, including at TMR chip array, signal
Manage circuit, microcontroller and display;
The TMR chip array is set in space locating for measured conductor, the output end and signal of the TMR chip array
The input terminal of processing circuit connects, and the output end of the signal processing circuit and the input terminal of microcontroller connect, the micro-control
The display output end of device processed and the input terminal of display connect.
Further, the TMR chip array include 4 TMR chips: TMR chip I, TMR chip II, TMR chip III and
TMR chip IV, 4 TMR chips are in same plane and rectangular array is arranged, 4 TMR chips are located at 4 rectangles
Vertex.
Further, line and measured conductor to the diagonal line crosspoint of rectangular array of the measured conductor to TMR chip I
Line between angle be 45 degree;Measured conductor to TMR chip II line and measured conductor to rectangular array diagonal line
Angle between the line in crosspoint is 45 degree.
Further, the microcontroller measures electric current according to the following method:
By the magnetic field strength B after the energization of TMR chip array measurement measured conductor;
Magnetic field-current relationship is searched according to magnetic field strength and corresponds to table, obtains the electric current of measured conductor;
Wherein, magnetic field strength converts obtain according to the following formula: B=(B1-B2)/2。
Further, the signal processing circuit includes differential signal conversion circuit and bias treatment circuit;
The differential signal conversion circuit, input terminal are connect with the output end of TMR chip, for exporting TMR chip
Differential signal be converted to single-ended signal and export;
The bias treatment circuit, input terminal are connect with the output end of differential signal conversion circuit, are used for single-ended letter
It number is converted to positive voltage signal and is input in microcontroller.
It further, further include power supply unit, said supply unit includes battery and voltage conversion circuit, the electric power storage
The output end in pond and the input terminal of voltage conversion circuit connect, and the direct current that the voltage conversion circuit exports battery is distinguished
It is converted into 12V, 1V and 3.3V direct current, 12V DC electricity is powered to differential signal conversion circuit and bias treatment circuit, and 1V is straight
Galvanic electricity is powered to TMR chip, and 3.3V direct current is powered to microcontroller.
It further, further include for installing signal processing circuit, microcontroller and the shell of display, the shell is adopted
It is made of high permeability material, the TMR chip array is fixedly installed on outside shell by mounting bracket.
Beneficial effects of the present invention: by means of the invention it is possible to realize contactless to the conductor current progress in power distribution network
Measurement, avoids impacting transmission line of electricity and security risk, and can effectively remove interference present in measurement process,
Ensure measurement accuracy, so that measurement parameter accurately instructs the safe and stable operation of power grid.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and examples:
Fig. 1 is electrical structure schematic diagram of the invention.
Fig. 2 is array structure schematic diagram of the invention.
Magnetic field schematic diagram when Fig. 3 is present invention measurement.
Fig. 4 is schematic diagram of housing structure of the invention.
Specific embodiment
Further description is made to the present invention below in conjunction with Figure of description, as shown in the figure:
A kind of current measuring device based on TMR tunnel magnetoresistive provided by the invention, including at TMR chip array 7, signal
Manage circuit, microcontroller and display 8;
The TMR chip array is set in space locating for measured conductor 6, the output end and letter of the TMR chip array
The input terminal connection of number processing circuit, the output end of the signal processing circuit and the input terminal of microcontroller connect, described micro-
The display output end of controller and the input terminal of display connect, and by above structure, can be realized to the conductor in power distribution network
Electric current carries out non-contact measurement, avoids impacting transmission line of electricity and security risk, and can effectively remove measurement
Existing interference in the process, it is ensured that measurement accuracy, so that measurement parameter accurately instructs the safe and stable operation of power grid.
In the present embodiment, the TMR chip array includes 4 TMR chips: TMR chip I 1, TMR chip II 2, TMR chip
III 3 and TMR chip, IV 4,4 TMR chips are in same plane and rectangular array is arranged, 4 TMR chips are located at
The vertex of 4 rectangles.
Wherein, line and measured conductor to the diagonal line crosspoint of rectangular array of the measured conductor to TMR chip I
Angle between line is 45 degree;Measured conductor is handed over to the line of TMR chip II and the diagonal line of measured conductor to rectangular array
Angle between the line of crunode is 45 degree.The opposite position of Accurate Calibration TMR chip array 7 and measured conductor 6 when mounting device
Distance is set, later further according to chip output characteristics, obtains each chip output voltage and size of current in measured conductor 6 in array
Relationship.In conjunction with the voltage signal gain and processing in signal processing circuit, corresponding micro-controller program algorithm is write, in journey
The program of removal external magnetic field interference is write in sequence algorithm based on 7 structure of TMR chip array, and carries out program using fft algorithm
Denoising.Later after device is correctly installed, measurement 6 surrounding magnetic field of measured conductor of TMR chip array 7, output voltage signal,
Voltage signal inputs microcontroller through signal processing circuit, and final process obtains accurate measured conductor current value and in display
It is shown on unit 8.
In the present embodiment, as shown in Figure 2: the microcontroller measures electric current according to the following method: in above-mentioned array, point
It is two groups, TMR chip I 1, TMR chip II 2 are one group, and TMR chip III 3 and TMR chip IV 4 are one group, carry out magnetic field respectively
Calculating;
By the magnetic field strength B after the energization of TMR chip array measurement measured conductor;
Magnetic field-current relationship is searched according to magnetic field strength and corresponds to table, obtains the electric current of measured conductor;
Wherein, by taking TMR chip I 1 and TMR chip II 2 as an example: magnetic field strength converts obtain according to the following formula: B=(B1-
B2)/2;Wherein, B1For the magnetic induction intensity on I 1 sensitive direction of TMR chip, B2For the magnetic strength on II 2 sensitive direction of TMR chip
Answer intensity;Wherein, B1=BS+B;B2=BS-B;Pass through B2And B1Two formulas subtract each other, propose environmental disturbances magnetic field BS。
In the present embodiment, the signal processing circuit includes differential signal conversion circuit and bias treatment circuit;
The differential signal conversion circuit, input terminal are connect with the output end of TMR chip, for exporting TMR chip
Differential signal be converted to single-ended signal and export;
The bias treatment circuit, input terminal are connect with the output end of differential signal conversion circuit, are used for single-ended letter
It number is converted to positive voltage signal and is input in microcontroller, since TMR chip array is four, signal processing circuit
It also is four.
It further include power supply unit in the present embodiment, said supply unit includes battery and voltage conversion circuit, described
The output end of battery and the input terminal of voltage conversion circuit connect, the direct current that the voltage conversion circuit exports battery
It is converted into 12V, 1V and 3.3V direct current respectively, 12V DC electricity is powered to differential signal conversion circuit and bias treatment circuit,
1V direct current is powered to TMR chip, and 3.3V direct current is powered to microcontroller.
It further include for installing signal processing circuit, microcontroller and the shell of display, the shell in the present embodiment
Body is made of high permeability material, and the TMR chip array is fixedly installed on outside shell by mounting bracket.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the scope of the claims of invention.
Claims (7)
1. a kind of current measuring device based on TMR tunnel magnetoresistive, it is characterised in that: including TMR chip array, signal processing electricity
Road, microcontroller and display;
The TMR chip array is set in space locating for measured conductor, the output end and signal processing of the TMR chip array
The input terminal of circuit connects, and the output end of the signal processing circuit and the input terminal of microcontroller connect, the microcontroller
Display output end and display input terminal connect.
2. the current measuring device according to claim 1 based on TMR tunnel magnetoresistive, it is characterised in that: the TMR chip battle array
Column include 4 TMR chips: TMR chip I, TMR chip II, TMR chip III and TMR chip IV, and 4 TMR chips are in same
In plane and rectangular array is arranged, 4 TMR chips are located at the vertex of 4 rectangles.
3. the current measuring device according to claim 2 based on TMR tunnel magnetoresistive, it is characterised in that: the measured conductor
To TMR chip I line and measured conductor to the angle between the line in the diagonal line crosspoint of rectangular array be 45 degree;It is tested
Conductor to TMR chip II line and measured conductor to the angle between the line in the diagonal line crosspoint of rectangular array be 45
Degree.
4. the current measuring device according to claim 3 based on TMR tunnel magnetoresistive, it is characterised in that: the microcontroller
Electric current is measured according to the following method:
By the magnetic field strength B after the energization of TMR chip array measurement measured conductor;
Magnetic field-current relationship is searched according to magnetic field strength and corresponds to table, obtains the electric current of measured conductor;
Wherein, magnetic field strength converts obtain according to the following formula: B=(B1-B2)/2。
5. the current measuring device according to claim 3 based on TMR tunnel magnetoresistive, it is characterised in that: the signal processing
Circuit includes differential signal conversion circuit and bias treatment circuit;
The differential signal conversion circuit, input terminal are connect with the output end of TMR chip, the difference for exporting TMR chip
Sub-signal is converted to single-ended signal and exports;
The bias treatment circuit, input terminal are connect with the output end of differential signal conversion circuit, for turning single-ended signal
It is changed to positive voltage signal and is input in microcontroller.
6. the current measuring device according to claim 5 based on TMR tunnel magnetoresistive, it is characterised in that: further include that power supply is single
Member, said supply unit include battery and voltage conversion circuit, the output end of the battery and voltage conversion circuit
The direct current that battery exports is converted into 12V, 1V and 3.3V direct current by input terminal connection, the voltage conversion circuit respectively
Electricity, 12V DC electricity are powered to differential signal conversion circuit and bias treatment circuit, and 1V direct current is powered to TMR chip, and 3.3V is straight
Galvanic electricity is powered to microcontroller.
7. the current measuring device according to claim 1 based on TMR tunnel magnetoresistive, it is characterised in that: further include for pacifying
The shell of signal processing circuit, microcontroller and display is filled, the shell is made of high permeability material, the TMR core
Chip arrays are fixedly installed on outside shell by mounting bracket.
Priority Applications (2)
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CN201910397949.2A CN110031668A (en) | 2019-05-14 | 2019-05-14 | Current measuring device based on TMR tunnel magnetoresistive |
CN202010366636.3A CN111337733B (en) | 2019-05-14 | 2020-04-30 | TMR-based busbar current and magnetic field intensity measuring device |
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CN201910397949.2A CN110031668A (en) | 2019-05-14 | 2019-05-14 | Current measuring device based on TMR tunnel magnetoresistive |
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CN202010366636.3A Active CN111337733B (en) | 2019-05-14 | 2020-04-30 | TMR-based busbar current and magnetic field intensity measuring device |
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CN113325228A (en) * | 2021-06-04 | 2021-08-31 | 江苏大学 | Single-side current detection device and method based on magnetoresistive effect sensor array |
CN113391116A (en) * | 2021-03-17 | 2021-09-14 | 清华大学 | Sensor array for measuring bus current |
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CN101821638B (en) * | 2007-09-03 | 2014-09-03 | 卡普雷斯股份有限公司 | Method of determining an electrical property of test sample |
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CN111337733B (en) * | 2019-05-14 | 2022-01-28 | 重庆大学 | TMR-based busbar current and magnetic field intensity measuring device |
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CN113325228A (en) * | 2021-06-04 | 2021-08-31 | 江苏大学 | Single-side current detection device and method based on magnetoresistive effect sensor array |
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CN111337733B (en) | 2022-01-28 |
CN111337733A (en) | 2020-06-26 |
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