CN110029319A - Sputtering unit and method for sputtering - Google Patents
Sputtering unit and method for sputtering Download PDFInfo
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- CN110029319A CN110029319A CN201910360190.0A CN201910360190A CN110029319A CN 110029319 A CN110029319 A CN 110029319A CN 201910360190 A CN201910360190 A CN 201910360190A CN 110029319 A CN110029319 A CN 110029319A
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- sputtering
- substrate
- microwave
- particle
- layer
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
It includes: sputtering chamber, particle sputtering equipment, microwave generating apparatus and microwave tube that the present invention, which provides a kind of sputtering unit and method for sputtering, the sputtering unit,.The method for sputtering includes: substrate setting steps, sputtering chamber vacuum step, sputtering chamber aeration step and sputter step.The technical effects of the invention are that increasing microwave generating apparatus, so that low pressure biasing occurs for membrane material particle, to reduce the energy of sputtering membrane material particle, the damage to substrate is reduced.
Description
Technical field
The present invention relates to sputtering field, in particular to a kind of sputtering unit and method for sputtering.
Background technique
The basic structure of general OLED is to be connected by indium tin oxide (ITO) with electrode anode (Anode), along with gold
Belong to cathode (cathode), is bundled into the structure such as sandwich.Total layer includes: hole transmission layer (HTL), luminescent layer (EL)
With electron transfer layer (ETL), when supplying power to appropriate voltage, positive hole will be tied with cathode charge in luminescent layer
It closes, the exciton of formation eventually leads to the transmitting of visible light, and the production method of organic electroluminescence display device and method of manufacturing same (OLED) electrode
It is generally made of evaporation coating device or sputtering equipment, is just needed when using the luminous device architecture in top using the saturating of high transmittance
Bright oxide (TCO), this film layer generally require sputtering equipment to deposit.With OLED display screen application it is more and more extensive,
The production method of sputtering equipment and electrode can also be applied more.
As shown in Figure 1, current magnetic control sputtering device includes sputtering chamber 100 and particle sputtering equipment, sputtering chamber 100 includes
Plated film area 110 and sputtering zone 120, the particle sputtering equipment includes: target 210, cooling device 220 and strong magnet 230, in height
Under vacuum environment, it is passed through inert gas such as argon gas to sputtering chamber 100, then applies voltage at yin-yang the two poles of the earth, gas ionization occurs
Glow discharge forms plasma, 210 surface of target is bombarded under magnetic fields, to sputter target particle and secondary electricity
Son, and the target particle sputtered out has high-energy, high-energy target particle hits substrate surface and forms required metal film
Layer.
When we usually make OLED cathode (Cathode), organic film is had below, the target particle of high-energy will
Organic film is caused to damage, and the target shock substrate of high-energy can also generate a large amount of heat, excessively high temperature is same
Organic film can be damaged, to influence the performance of entire OLED device.
Summary of the invention
It is an object of the present invention to solve the target of high-energy present in sputter deposition OLED cathode processing procedure in the prior art
Material particle damages organic film, influences the technical problems such as panel yield.
To achieve the above object, the present invention provides a kind of sputtering unit, comprising: and sputtering chamber, internal is a cavity, including
Plated film area and sputtering zone；Particle sputtering equipment is set in the sputtering zone, to sputter membrane material particle into the plated film area；
Microwave generating apparatus is set to outside the sputtering chamber；And microwave tube, it is set in the sputtering zone, and be connected to the microwave
Generating device；The nozzle of the microwave tube is towards the sputtering zone between the particle sputtering equipment and the plated film area.
Further, the sputtering unit further includes substrate moving device, is set in the plated film area, in the plating
Moving substrate in film area.
Further, the sputtering unit further includes technique tracheae, the cavity being connected to inside the sputtering chamber.
Further, the particle sputtering equipment includes target, is turnably set in the sputtering zone.
Further, the particle sputtering equipment further include: target shaft, the target are fixed to the target shaft
Outside；Shaft cavity, set on the inside of the target shaft；Cooling device is set in the shaft cavity；And strong magnetic
Iron is set in the shaft cavity.
Further, the particle sputtering equipment is cathode assembly；The membrane material particle is TCO cathode particles.
Further, the microwave generating apparatus includes: microwave launcher；Microwave guiding arrangement, one end are connected to
The microwave launcher, the other end are connected to the microwave tube；And microwave regulating device, it is set to the microwave transmission and fills
Set side wall.
To achieve the above object, the present invention also provides a kind of method for sputtering, include the following steps: substrate setting steps, will
One substrate is sent to the plated film area of sputtering chamber, in the substrate surface mask film covering version；Sputtering chamber vacuum step is splashed to described
The cavity for penetrating room carries out vacuumize process；Inert gas is passed through the sputtering chamber by technique tracheae by sputtering chamber aeration step
It is interior；And sputter step, start particle sputtering equipment and microwave generating apparatus, deposits one in a surface sputter of the substrate
Film layer.
It further, include: anode layer preparation step before the substrate setting steps, in the upper surface system of a substrate
A standby anode layer out, the anode layer are metal or transparent metal oxide；And organic layer preparation step, in the anode layer
Upper surface prepare an organic layer.
Further, in the substrate setting steps, the substrate is vapor-deposited with the one side of organic layer and the particle splashes
Injection device is oppositely arranged.
Further, in the sputter step, the substrate is translated in the plated film area；Under the influence of a magnetic field,
The target material surface of the particle sputtering equipment generates membrane material particle；Under the collective effect in microwave and magnetic field, the membrane material particle
It is sputtered onto the substrate, deposits a film layer in the substrate surface.
Further, in the sputter step, the particle sputtering equipment is cathode assembly；The membrane material particle is TCO
Cathode particles；And the film layer is cathode layer.
The technical effects of the invention are that increase microwave generating apparatus on the basis of existing magnetic control sputtering device,
Under the action of magnetic field, electron cyclotron resonace ion range is formed in target material surface, microwave makes membrane material particle that low pressure biasing occur,
To reduce the energy of sputtering membrane material particle, damage when reducing sputter to organic layer.Meanwhile the sputtering unit can be in low temperature
Under it is required that, sputter goes out the OLED cathode of low damage high transmittance, and the aperture opening ratio of OLED display is much improved.It is of the present invention
Sputtering unit can be used on continuous sputter coating line, the maximization of yield can be reached by increasing target quantity.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of magnetic control sputtering device in the prior art；
Fig. 2 is the structural schematic diagram of sputtering unit described in the embodiment of the present invention；
Schematic diagram when Fig. 3 is sputtering unit sputter described in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of particle sputtering equipment described in the embodiment of the present invention；
Fig. 5 is the flow chart of method for sputtering described in the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of oled panel described in the embodiment of the present invention；
Fig. 7 is the PL spectrogram of oled panel described in the embodiment of the present invention.
Members mark is as follows:
100, sputtering chamber；110, plated film area；120, sputtering zone；210, target；220, cooling device；230, strong magnet；
1, sputtering chamber；11, plated film area；111, substrate；12, sputtering zone；121, microwave action area；122, technique tracheae；
2, particle sputtering equipment；21, target；22, cooling device；23, strong magnet；
3, microwave tube；
4, microwave generating apparatus；41, microwave launcher；42, microwave guiding arrangement, 43, microwave regulating device；
101, substrate；102, anode layer；103, organic layer；104, cathode layer.
Specific embodiment
Below in conjunction with Figure of description, the preferred embodiments of the present invention are described in detail, with complete to those of skill in the art
It is whole to introduce technology contents of the invention, prove that the present invention can be implemented with citing, so that technology contents disclosed by the invention are more
It is clear, so that will more readily understand how implement the present invention by those skilled in the art.However the present invention can pass through many differences
The embodiment of form emerges from, and protection scope of the present invention is not limited only to the embodiment mentioned in text, Examples below
The range that is not intended to limit the invention of explanation.
The direction term that the present invention is previously mentioned, for example, "upper", "lower", "front", "rear", "left", "right", "inner", "outside", "
Side " etc. is only the direction in attached drawing, and direction term used herein is of the invention for explanation and illustration, rather than is used
To limit the scope of protection of the present invention.
In the accompanying drawings, the identical component of structure is indicated with same numbers label, everywhere the similar component of structure or function with
Like numeral label indicates.In addition, in order to facilitate understanding and description, the size and thickness of each component shown in the drawings are any
It shows, the present invention does not limit the size and thickness of each component.
When certain components, when being described as " " another component "upper", the component can be placed directly within described another group
On part；There may also be an intermediate module, the component is placed on the intermediate module, and the intermediate module is placed in another group
On part.When a component is described as " installation is extremely " or " being connected to " or " being connected to " another component, the two be can be understood as
It directly " installs " or " connection " or " connection " or component is by an intermediate module " installation to " or " being connected to " or " even
Pass to " another component.
As shown in figs. 2 to 4, the present embodiment provides a kind of sputtering units, comprising: sputtering chamber 1, particle sputtering equipment 2, microwave
Pipe 3 and microwave generating apparatus 4.
It is a cavity inside sputtering chamber 1, the cavity includes the plated film area 11 and sputtering zone 12 to communicate with each other.
There is a substrate moving device in plated film area 11, the substrate moving device is used for moving substrate 111, so that substrate
111 in plated film area 11 along straight line uniform motion so that substrate 111 is able to uniform coated in subsequent sputter process.
Particle sputtering equipment 2 is set to inside sputtering zone 12, for sputtering membrane material particle, the membrane material grain to sputtering zone 12
In son deposition to the substrate 111 in plated film area 11.
Microwave tube 3 is set to inside sputtering zone 12, and one end of microwave tube 3 is connected to microwave generating apparatus 4, the pipe of the other end
Mouthful towards 111 direction of substrate.The microwave launched from microwave tube 3 makes the membrane material particle of sputtering zone 12 that low pressure biasing, drop occur
The energy of low sputtering membrane material particle.
The sputtering unit further includes technique tracheae 122, and technique tracheae 122 is connected to the cavity, is used for the sky
It is intracavitary to be passed through inert gas, preferably argon gas, to complete subsequent sputtering process.
Particle sputtering equipment 2 includes target 21, target shaft, cooling device 22 and strong magnet 23.Target 21 is turnable
In sputtering zone 12, it is fixed with a target shaft inside target 21, a shaft cavity, cooling dress are equipped in the target shaft
It sets 22 to be set in the shaft cavity, strong magnet 23 is set in the shaft cavity.
Microwave generating apparatus 4, for emit and conducts microwaves, including microwave launcher 41, microwave guiding arrangement 42 and
Microwave regulating device 43.For microwave launcher 41 for emitting microwave, one end of microwave guiding arrangement 42 is connected to Microwave emission
Device 41, the other end are connected to microwave tube 3, and the microwave that microwave guiding arrangement 42 is used to launch microwave launcher 41 passes
It is unidirectional conductive process to microwave tube 3.Microwave regulating device 43 is set on the side wall of the microwave guiding arrangement 42, microwave tune
Regulating device 43 is used to adjust the microwave in microwave guiding arrangement 42, meets different sputtering demands.
Sputtering zone between particle sputtering equipment 2 and plated film area 11 is microwave action area 121, the present embodiment at work,
Low pressure biasing occurs in microwave action area 121 for the membrane material particle that particle sputtering equipment 2 emits, on the one hand, reduces sputtering membrane material
The energy of particle reduces speed when membrane material particle is in contact with substrate, in case the organic layer of substrate occurs compared with macrolesion；Another party
The direction of travel in face, membrane material particle shifts relative to initial sputter direction, so that a large amount of membrane material particle disorderings and substrate
Contact, so that a large amount of membrane material particles are uniformly distributed in the one side of substrate as far as possible.
Particle sputtering equipment 2 in the present embodiment is cathode assembly, and the membrane material particle is transparent metal oxide (TCO)
Cathode particles.
Sputtering unit described in the present embodiment has technical effect that, increases microwave on existing sputtering equipment and fills
It sets, under the influence of a magnetic field, forms electron cyclotron resonace ion range in target material surface, under the action of microwave, reduce membrane material
Energy of the particle in sputter, and then the damage to having film layer on substrate is reduced, improve sputter yield.Described in the present embodiment
Sputtering unit can reach maximum production by increasing target quantity on continuous sputtering line.
As shown in figure 5, the present embodiment also provides a kind of method for sputtering, specifically comprise the following steps S1~S6.
S1 anode layer preparation step prepares an anode layer in the upper surface of a substrate, the anode layer be metal or
Transparent metal oxide (TCO).
S2 organic layer preparation step prepares an organic layer in the upper surface of the anode layer, and the organic layer includes sky
Cave implanted layer (HIL), hole transmission layer (HTL), luminescent layer (EML), electron transfer layer (ETL) and electron injecting layer (EIL).
The substrate for having prepared organic layer, is sent to the substrate moving device in plated film area, sputtering chamber by S3 substrate setting steps
On, surface covers a mask plate on the substrate.
S4 sputtering chamber vacuum step carries out vacuumize process to the cavity of the sputtering chamber, so that the sputtering chamber
Cavity levels off to vacuum state, forms the environment of high vacuum.
Inert gas is passed through in the sputtering chamber, the inert gas by S5 sputtering chamber aeration step by technique tracheae
It is preferred that argon gas.
S6 sputter step, starting substrate moving device, particle sputtering equipment and microwave generating apparatus.As shown in figure 3, substrate
Right side of the mobile device by substrate from the left side uniform translation in plated film area to plated film area.Under the influence of a magnetic field, particle sputtering dress
The target material surface set generates membrane material particle.Microwave generating apparatus generates microwave, emits microwave from the nozzle of microwave tube, in the grain
Sputtering zone between sub- sputtering equipment and the plated film area forms microwave action area, under the collective effect in microwave and magnetic field, institute
It states membrane material particle and low pressure biasing occurs in the microwave action area, the membrane material particle passes through the microwave action area and is sputtered
To the plated film area, a film layer, preferably cathode layer are deposited in the organic surface sputter of the substrate.
At work, low pressure biasing occurs the present embodiment in microwave action area for membrane material particle, on the one hand, reduces sputtered film
The energy of material particle reduces speed when membrane material particle is in contact with substrate, in case the organic layer of substrate occurs compared with macrolesion；It is another
The direction of travel of aspect, membrane material particle shifts relative to initial sputter direction, so that a large amount of membrane material particle disorderings and base
Plate contact, so that a large amount of membrane material particles are uniformly distributed in the one side of substrate as far as possible.
In sputtering process, since the energy of sputtering membrane material particle is lowered, speed is slowed, membrane material particle and substrate table
The damage generated when face collides is smaller, and therefore, the temperature of substrate is at 80 DEG C hereinafter, keeping low-temperature condition, organic layer is in UV
Less than 40%, the transmitance of cathode layer is greater than 85% for damage under light.
As shown in fig. 6, the oled panel that sputter is completed includes substrate 1, anode layer 102, organic layer 103 and cathode layer 104.
Anode layer 102 is metal or transparent metal oxide (TCO), and organic layer 103 includes: hole injection layer (HIL), hole transmission layer
(HTL), luminescent layer (EML), electron transfer layer (ETL) and electron injecting layer (EIL), cathode layer are transparent metal oxide
(TCO)。
As shown in fig. 7, abscissa is wavelength, ordinate is luminous intensity, is made using sputtering equipment in the prior art
OLED cathode construction out, at 80 DEG C hereinafter, keeping low-temperature condition, the damage of organic layer under w light is less than the temperature of substrate
40%, Q1 are the PL spectrum of organic material, below several spectrum be the sputtering equipment described through this embodiment, in organic material
PL spectrum after upper sputtering cathode layer, it can be seen that PL spectrum is reduced within 40.Use sputtering unit described in the present embodiment
Make OLED cathode construction, optionally adjust the power of the sputtering unit DC power supply, the power of microwave generating apparatus,
The speed etc. of the flow of inert gas, sputter, reduces out luminous intensity in technique tracheae, to reach the technology effect of the low damage of low temperature
Fruit, so that cathode layer realizes the requirement of the OLED device such as high transmittance, surface resistance.
Particle sputtering equipment in the present embodiment is cathode assembly, and the membrane material particle is transparent metal oxide (TCO)
Cathode particles, the film layer are cathode layer.
The method for sputtering has technical effect that, increases microwave generating apparatus on existing sputtering equipment, in magnetic field
Under the action of, electron cyclotron resonace ion range is formed in target material surface, under the action of microwave, in membrane material particle deposition to base
Energy of the membrane material particle in sputter is reduced before plate, and then prevents damage of the high energy particle to having film layer on substrate, is subtracted
The heat generated when few membrane material particle deposition improves sputter yield.Method for sputtering described in the present embodiment is realized in low-temperature condition
The damage ratio of organic layer is effectively reduced in lower sputtering coated cathode layer, while the transmitance of cathode layer keeps high levels.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (12)
1. a kind of sputtering unit characterized by comprising
Sputtering chamber, internal is a cavity, including plated film area and sputtering zone；
Particle sputtering equipment is set in the sputtering zone, to sputter membrane material particle into the plated film area；
Microwave generating apparatus is set to outside the sputtering chamber；And
Microwave tube is set in the sputtering zone, and is connected to the microwave generating apparatus；The pipe of the microwave tube
Mouthful towards the sputtering zone between the particle sputtering equipment and the plated film area.
2. sputtering unit as described in claim 1, which is characterized in that further include
Substrate moving device is set in the plated film area, to the moving substrate in the plated film area.
3. sputtering unit as described in claim 1, which is characterized in that further include
Technique tracheae, the cavity being connected to inside the sputtering chamber.
4. sputtering unit as described in claim 1, which is characterized in that the particle sputtering equipment includes
Target is turnably set in the sputtering zone.
5. sputtering unit as claimed in claim 4, which is characterized in that the particle sputtering equipment further includes
Target shaft, the target are fixed to the outside of the target shaft；
Shaft cavity, set on the inside of the target shaft；
Cooling device is set in the shaft cavity；And
Strong magnet is set in the shaft cavity.
6. sputtering unit as described in claim 1, which is characterized in that
The particle sputtering equipment is cathode assembly；
The membrane material particle is TCO cathode particles.
7. sputtering unit as described in claim 1, which is characterized in that the microwave generating apparatus includes
Microwave launcher；
Microwave guiding arrangement, one end are connected to the microwave launcher, and the other end is connected to the microwave tube；And
Microwave regulating device is set to the microwave guiding arrangement side wall.
8. a kind of method for sputtering, which comprises the steps of:
One substrate is sent to the plated film area of sputtering chamber by substrate setting steps, in the substrate surface mask film covering version；
Sputtering chamber vacuum step carries out vacuumize process to the cavity of the sputtering chamber；
Inert gas is passed through in the sputtering chamber by sputtering chamber aeration step by technique tracheae；And
Sputter step starts particle sputtering equipment and microwave generating apparatus, deposits a film in a surface sputter of the substrate
Layer.
9. method for sputtering as claimed in claim 8, which is characterized in that
Include: before the substrate setting steps
Anode layer preparation step prepares an anode layer in the upper surface of a substrate, and the anode layer is metal or transparent metal
Oxide；And
Organic layer preparation step prepares an organic layer in the upper surface of the anode layer.
10. method for sputtering as claimed in claim 9, which is characterized in that
In the substrate setting steps,
The substrate is vapor-deposited with the one side of organic layer and the particle sputtering equipment is oppositely arranged.
11. method for sputtering as claimed in claim 8, which is characterized in that
In the sputter step,
The substrate is translated in the plated film area；
Under the influence of a magnetic field, the target material surface of the particle sputtering equipment generates membrane material particle；
Under the collective effect in microwave and magnetic field,
The membrane material particle is sputtered onto the substrate, deposits a film layer in the substrate surface.
12. method for sputtering as claimed in claim 11, which is characterized in that
In the sputter step,
The particle sputtering equipment is cathode assembly；
The membrane material particle is TCO cathode particles；And
The film layer is cathode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910360190.0A CN110029319A (en) | 2019-04-30 | 2019-04-30 | Sputtering unit and method for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910360190.0A CN110029319A (en) | 2019-04-30 | 2019-04-30 | Sputtering unit and method for sputtering |
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| CN110029319A true CN110029319A (en) | 2019-07-19 |
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| CN201910360190.0A Pending CN110029319A (en) | 2019-04-30 | 2019-04-30 | Sputtering unit and method for sputtering |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5531877A (en) * | 1992-09-10 | 1996-07-02 | Leybold Aktiengesellschaft | Microwave-enhanced sputtering configuration |
| CN1800441A (en) * | 2005-01-05 | 2006-07-12 | 鸿富锦精密工业（深圳）有限公司 | Precipitation method and device for plasma reinforced film |
| CN102899621A (en) * | 2011-07-29 | 2013-01-30 | 三星显示有限公司 | Sputter device |
| CN103262663A (en) * | 2011-04-28 | 2013-08-21 | 东海橡塑工业株式会社 | Microwave plasma generation device, and magnetron sputtering film deposition device using same |
-
2019
- 2019-04-30 CN CN201910360190.0A patent/CN110029319A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5531877A (en) * | 1992-09-10 | 1996-07-02 | Leybold Aktiengesellschaft | Microwave-enhanced sputtering configuration |
| CN1800441A (en) * | 2005-01-05 | 2006-07-12 | 鸿富锦精密工业（深圳）有限公司 | Precipitation method and device for plasma reinforced film |
| CN103262663A (en) * | 2011-04-28 | 2013-08-21 | 东海橡塑工业株式会社 | Microwave plasma generation device, and magnetron sputtering film deposition device using same |
| CN102899621A (en) * | 2011-07-29 | 2013-01-30 | 三星显示有限公司 | Sputter device |
Non-Patent Citations (1)
| Title |
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| 宋瑞海等: "微波ECＲ等离子体装置的性能研究", 《真空与低温》 * |
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