CN110026626A - A kind of method of quick in situ discharge finishing processing STM probe - Google Patents
A kind of method of quick in situ discharge finishing processing STM probe Download PDFInfo
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- CN110026626A CN110026626A CN201910356500.1A CN201910356500A CN110026626A CN 110026626 A CN110026626 A CN 110026626A CN 201910356500 A CN201910356500 A CN 201910356500A CN 110026626 A CN110026626 A CN 110026626A
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- 239000000523 sample Substances 0.000 title claims abstract description 83
- 238000012545 processing Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000002679 ablation Methods 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 2
- 238000007730 finishing process Methods 0.000 abstract description 2
- 238000003754 machining Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004621 scanning probe microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H1/00—Electrical discharge machining, i.e. removing metal with a series of rapidly recurring electrical discharges between an electrode and a workpiece in the presence of a fluid dielectric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H9/00—Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The present invention relates to a kind of methods of quick in situ discharge finishing processing STM probe, after STM scans sample surfaces, it carries out probe tip in situ and modifies processing: using STM probe as anode, sample is as cathode, the interpolar for controlling nanoscale processes spacing, applies the DC voltage of short pulse in two interpolars, forms the discharge channel of nanoscale, the skirt materials of ablation probe tip improve the sharpness of needle point.Compared with prior art, the sharpening of STM probe not only may be implemented in the present invention, to improve the resolution ratio of STM scanning imagery, and in the finishing process of entire probe, clamping and the resetting of progress probe are not needed, it is carried out in situ after selection area in STM device, improves processing efficiency, it is easy to operate and quick.
Description
Technical field
The present invention relates to nanoprocessing field, specifically a kind of reality of quick in situ discharge finishing processing STM probe
Existing method.
Background technique
Scanning probe microscopy (STM) is the surface topography scanning imagery and detection device of a kind of nanoscale, Ke Yida
To the spatial resolution of atomic scale.What STM measurement utilized is that tunnel current can be with distance between needle point and local sample surfaces
Extremely sensitive variation occurs, which is usually to exponentially change.Currently, in addition to as important
Measuring tool, STM be also used as nanoprocessing etching tool, be widely used.
No matter STM is operated for measuring, or for nanoprocessing, requires to utilize extremely sharp STM probe needle
Point can be realized.The geometrical morphology of STM probe tip has important influence, general needle point to the resolution ratio and precision of imaging
Radius of curvature must reach 50nm hereinafter, can just access high-resolution sample surface morphology measurement result.However,
During STM scanning survey or processing etching, the rubbing action when needle point of probe is due to being repeatedly scanned with, inevitably
The adherency of abrasion passivation and pollutant can occur, so that the radius of curvature for directly contributing STM probe tip becomes larger, so that probe loses
Effect, can not clearly be imaged.After STM probe destruction, it usually needs more renew probe or modify original probe tip, refill
It is sandwiched on the needle point seat of STM, then specified local sample surfaces is positioned again, such operation can cause as follows
Problem:
1) a large amount of time is consumed for clamping and is relocated, and processing efficiency is reduced；
2) the material removal amount very little for modifying probe tip, belongs to micro-nano-scale, difficulty of processing is big.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind not to need repeatedly
Carry out probe clamping, finishing processing quickly, and can in situ detection finishing after probe tip whether the quick in situ of sharpening
The method of discharge finishing processing STM probe.
The purpose of the present invention can be achieved through the following technical solutions: a kind of quick in situ discharge finishing processing STM spy
The method of needle, which is characterized in that after STM scans sample surfaces, probe tip finishing processing in situ is carried out, with nanoscale
Discharge-treating method, control nanoscale interpolar processing spacing, be applied to the voltage swing of two interpolar of probe and sample with
And the time of voltage effect carrys out the material at ablation probe tip edge, improves the sharpness of needle point.
The electro-discharge machining of the nanoscale is to be accomplished by the following way: using STM probe as anode, sample conduct
Cathode applies the DC voltage of short pulse in two interpolars, forms the discharge channel of nanoscale, the edge material of ablation probe tip
Material.Since electric field is concentrated the most in the edge of passivation needle point, nanometer point of discharge is generated at the maximum edge of electric field strength
Place carries out electric discharge removal to the material at needle point edge, so that needle point sharpening.
The determination method of the interpolar processing spacing of the nanoscale are as follows: true according to tunnel current-height relationships curve
Fixed initial tunnel spacing, then piezoelectric scanning driver is driven, opposite displacement is carried out in the direction z, is obtained specified nanometer and is added
Break away from.It is obtained according to experiment, under atmospheric environment, the electric field strength threshold value of nanometer electro-discharge machining is about 6.0V/nm or more, institute
It should be set as obtaining electric discharge removal divided by electric field strength threshold value less than the discharge voltage amplitude applied and adding to process spacing
Work；But processing spacing also should not be arranged too small, when in order to avoid electric discharge is excessively violent, will cause entire tip point material and be removed,
Needle point radius of curvature can be made to become much larger instead, needle point passivation is further aggravated.
The STM probe connects the anode of power supply as anode, and sample is placed in piezoelectricity and sweeps as minus earth, sample
It retouches on driver, the movement by piezoelectric scanning driver in the direction z, adjusts the spacing between anode and cathode.
Tunnel current-height (I-D) relation curve is that tunnel current increases with height and exponentially decays, approximate
Matched curve be I=C1 × exp (- C2 × D), wherein C1, C2 are fitting constant；Initial tunnel spacing is chosen for 0.6~
1.6nm。
The range of the interpolar processing space D of the nanoscale are as follows: 0.5nm < D < V/E0, the V is to be applied to two
The DC voltage amplitude of interpolar, E0For electric field strength threshold value, E0=6.0~8.0V/nm.
The voltage swing of two interpolar of probe and sample and the action time of voltage are applied in electro-discharge machining by experiment
Processing result, which is summarized, to be obtained.The described DC voltage for applying short pulse in two interpolars, the DC voltage of application is 6~
10V, the action time of voltage are 100~300ms.
The sharpness of the needle point is detected and is determined in situ.
The detection of the sharpness of the needle point and determination method are as follows: the method for using STM scanning imagery in situ, detection
Scanning imagery figure before the shape appearance figure of sample surfaces local, with finishing processing compares, if the clarity of image is mentioned
Height, that is, the needle point after showing finishing become more sharp.
The detection of the sharpness of the needle point and determination method are as follows: in situ detection tunnel current-altitude curve, with finishing
The curve measured before processing compares, the sharpening meeting of needle point so that curve is more precipitous, tunnel current with height increasing
Add and declines more rapid.
Compared with prior art, the present invention is added using the method that quick in situ discharges to carry out the finishing of STM probe tip
Work not only can reduce the radius of curvature of needle point, effectively improve the resolution ratio of STM measurement, and in the finishing of entire probe
In process, the clamping for repeatedly carrying out probe is not needed, is carried out in situ after selection area in STM device, also
Reduce the time of resetting, it is easy to operate and quick.
Detailed description of the invention
Fig. 1 is the principle of the present invention schematic diagram；
Wherein 1 is STM probe, and 2 be probe tip, and 3 be conducting sample, and 4 be processing spacing, and 5 be piezoelectric ceramic scanatron
Driver, 6 be DC power supply, and 7 be ammeter；
Fig. 2 is the relation curve of typical tunnel current and height；
Fig. 3 is that processing spacing is 1.0nm, when initial needle point radius of curvature is 80nm, in different discharge voltage and arteries and veins
Rush the needle point radius of curvature curve under the time after finishing processing；
Fig. 4 is in 8V, the comparison diagram of 200ms short pulse discharge finishing processing front and back STM scanning imagery；
Fig. 5 is in 8V, the comparison diagram of 200ms short pulse discharge finishing processing front and back tunnel current and altitude curve.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
Quick in situ discharge finishing is processed described in the implementation method following steps of STM probe:
1) before finishing processing, tunnel current-altitude curve is first obtained using STM measurement, i.e., it is bent according to approximate fitting
Line is I=C1 × exp (- C2 × D), by measuring tunnel current I and tip height D, makes tunnel current-altitude curve, obtains
Obtain fitting constant C1, C2；As shown in Figure 2 and Figure 5 and the shape appearance figure of sample surfaces, as shown in fig. 4 a.Pass through piezoelectric ceramics again
The horizontal direction of scanatron driver 5 is displaced, and so that probe tip 2 is located at the top of selected location, is ready for probe in situ
Finishing processing.After discharge finishing processing, it may be deposited on the surface of the samples by the tip point material of ablation, it therefore, can
The common-denominator target region that etching is measured or processed with selected distance STM has the position of certain distance to carry out discharge finishing processing, to
After the completion of needle point finishing, then it is moved back to common-denominator target region.
2) the processing spacing 4 being arranged between STM probe tip 2 and 3 surface of conducting sample is d.Generally processing spacing d is set
It sets in 1.0nm, electro-discharge machining is relatively stable.Firstly, setting is just by the tunnel current-altitude curve measured in step 1)
The tunnel spacing of beginning, as shown in Fig. 2, if will setting tunnel current be 0.1nA when, corresponding tip height, i.e., initial tunnel
Spacing is 1.6nm；If set 0.15nA for tunnel current, corresponding tip height is 0.6nm.Then, piezoelectricity is driven
Ceramic scanatron driver 5 carries out opposite displacement in a z-direction, and processing spacing is arranged to 1.0nm.Specific operating method
It is, when tunnel current is 0.1nA, the mobile 0.6nm on the direction z close to sample；When tunnel current is 0.15nA, tunnel current
Mobile 0.4nm on the direction z far from sample.
3) the electrical parameter setting of discharge finishing process.As shown in Figure 1, STM probe 1 is used as anode, connection power supply 6
Anode, sample 3 are used as cathode, ground connection.Obtained according to experiment, the electric field strength threshold value of nanometer electro-discharge machining be about 6.0V/nm with
On, so processing spacing should be set as the voltage magnitude less than electric discharge divided by electric field strength threshold value, electro-discharge machining could be obtained；But
It is that processing spacing is also unsuitable too small, when in order to avoid electric discharge is excessively violent, entire tip point material is removed, and can make needle point curvature half instead
Diameter becomes much larger, and needle point passivation is further aggravated.When processing spacing is 1.0nm, 6V or more should be arranged in voltage.
In the embodiment shown in fig. 3, STM probe material is platinumiridio, and sample surfaces are that copper film is coated on silicon wafer, two
Interelectrode processing spacing is set as 1.0nm, and the initial curvature radius of probe tip is 80nm.Applying 6V, 8V, 10V respectively
Voltage, voltage pulse is respectively to have obtained probe tip after finishing processing under the discharging condition of 100ms, 200ms and 300ms
The change curve of radius of curvature value.Needle point radius of curvature in empirical curve is to be imaged to survey by scanning electron microscope (SEM)
Amount obtains.From Fig. 3 result it is found that in 8V, under the conditions of the EDM parameter of 200ms, the sharpening effect of needle point is best.
4) result of in situ measurement discharge finishing processing.After completing discharge finishing processing, following two method can be passed through
Whether detection needle point obtains sharpening: first is that STM is scanned the shape obtained after imaging to the same area before and after contrast process
Looks figure, as shown in figure 4, the imaging definition of Fig. 4 b and resolution ratio all have and significantly mention than the image 4a before processing after processing
It is high；Second is that tunnel current-the altitude curve measured before and after contrast process, as shown in figure 5, the steepness of curve can be obvious after processing
It improves on ground.
If 5), according to the testing result of step 4), needle point can then weigh not by sharpening after a discharge finishing processing
Step 1)~4 more than multiple progress), re-start discharge finishing processing.This is because electro-discharge machining has certain randomness,
It is general to carry out 1 to 3 finishing that probe tip can be completed.
The present invention solves STM scanning probe tip and passivation failure occurs during being repeatedly scanned with imaging or lithography
Afterwards, the problems such as clamping for more renewing probe and the big difficulty of processing of repositioning time length or finishing probe tip, to modify STM
Probe provides effective and feasible quick Solution.
The above content is combine specific preferred embodiment further detailed description of the invention, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of method of quick in situ discharge finishing processing STM probe, which is characterized in that after STM scans sample surfaces, carry out
Probe tip in situ modifies processing: using STM probe as anode, sample controls the interpolar processing of nanoscale as cathode
Spacing applies the DC voltage of short pulse in two interpolars, forms the discharge channel of nanoscale, the edge material of ablation probe tip
Material, improves the sharpness of needle point.
2. a kind of method of quick in situ discharge finishing processing STM probe according to claim 1, which is characterized in that institute
The determination method of the interpolar processing spacing for the nanoscale stated are as follows: initial tunnel is determined according to tunnel current-height relationships curve
Road spacing, then piezoelectric scanning driver is driven, opposite displacement is carried out in the direction z, obtains specified nanoprocessing spacing.
3. a kind of method of quick in situ discharge finishing processing STM probe according to claim 2, which is characterized in that institute
The STM probe stated connects the anode of power supply as anode, and as minus earth, sample is placed on piezoelectric scanning driver sample,
Movement by piezoelectric scanning driver in the direction z adjusts the spacing between anode and cathode.
4. a kind of method of quick in situ discharge finishing processing STM probe according to claim 2, which is characterized in that institute
Tunnel current-height (I-D) relation curve stated is that tunnel current increases with height and exponentially decays, approximate matched curve
For I=C1 × exp (- C2 × D), wherein C1, C2 are fitting constant；Initial tunnel spacing is chosen for 0.6~1.6nm.
5. a kind of method of quick in situ discharge finishing processing STM probe according to claim 1, which is characterized in that institute
The range of the interpolar processing space D for the nanoscale stated are as follows: 0.5nm < D < V/E0, the V is the direct current for being applied to two interpolars
Voltage magnitude, E0For electric field strength threshold value, E0=6.0~8.0V/nm.
6. a kind of method of quick in situ discharge finishing processing STM probe according to claim 1, which is characterized in that institute
That states applies the DC voltage of short pulse in two interpolars, and the DC voltage of application is 6~10V, and the action time of voltage is 100~
300ms。
7. a kind of method of quick in situ discharge finishing processing STM probe according to claim 1, which is characterized in that institute
The sharpness for the needle point stated is detected and is determined in situ.
8. a kind of method of quick in situ discharge finishing processing STM probe according to claim 7, which is characterized in that institute
The detection of the sharpness for the needle point stated and determination method are as follows: the method for using STM scanning imagery in situ, test sample surface office
Scanning imagery figure before the shape appearance figure in domain, with finishing processing compares, if the clarity of image is improved, that is, shows to repair
Needle point after whole becomes more sharp.
9. a kind of method of quick in situ discharge finishing processing STM probe according to claim 7, which is characterized in that institute
The detection of the sharpness for the needle point stated and determination method are as follows: measured before in situ detection tunnel current-altitude curve, with finishing processing
Curve compare, so that curve is more precipitous, tunnel current declines with the increase of height for the sharpening meeting of needle point
It is more rapid.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910356500.1A CN110026626B (en) | 2019-04-29 | 2019-04-29 | Method for rapidly finishing STM probe by in-situ discharge |
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| CN201910356500.1A CN110026626B (en) | 2019-04-29 | 2019-04-29 | Method for rapidly finishing STM probe by in-situ discharge |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110526203A (en) * | 2019-08-02 | 2019-12-03 | 上海师范大学 | Method based on the quasi- three-dimensional micro-nano structure of AFM write-through stress-electric coupling lithography |
| CN111533085A (en) * | 2020-05-13 | 2020-08-14 | 东华大学 | Two-dimensional material ultra-precision machining method |
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| CN108145265A (en) * | 2018-01-30 | 2018-06-12 | 深圳大学 | The processing method and device of a kind of miniature bistrique for micro array structure processing |
| CN108161148A (en) * | 2018-01-30 | 2018-06-15 | 深圳大学 | The electric discharge finishing apparatus in place and method of a kind of milling head |
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2019
- 2019-04-29 CN CN201910356500.1A patent/CN110026626B/en not_active Expired - Fee Related
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| TWI239401B (en) * | 2002-08-29 | 2005-09-11 | Pointech Prec Co Ltd | A kind of method for fabricating novel probe used in the wafer (chip) testing |
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| CN110526203A (en) * | 2019-08-02 | 2019-12-03 | 上海师范大学 | Method based on the quasi- three-dimensional micro-nano structure of AFM write-through stress-electric coupling lithography |
| CN111533085A (en) * | 2020-05-13 | 2020-08-14 | 东华大学 | Two-dimensional material ultra-precision machining method |
| CN111533085B (en) * | 2020-05-13 | 2023-03-21 | 东华大学 | Two-dimensional material ultra-precision machining method |
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