CN110021685A - A kind of gallium nitride base high light efficiency LED extension base chip and preparation method thereof - Google Patents
A kind of gallium nitride base high light efficiency LED extension base chip and preparation method thereof Download PDFInfo
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- CN110021685A CN110021685A CN201810052575.6A CN201810052575A CN110021685A CN 110021685 A CN110021685 A CN 110021685A CN 201810052575 A CN201810052575 A CN 201810052575A CN 110021685 A CN110021685 A CN 110021685A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 101
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 230000007547 defect Effects 0.000 claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000011160 research Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000000243 photosynthetic effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000010612 desalination reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
Abstract
The invention discloses a kind of gallium nitride base high light efficiency LED extensions to build chip and preparation method thereof, it is included in growth high defect density layer containing C between N-shaped gallium nitride and Quantum Well, the growing method of high defect density layer containing C includes: after completing N-shaped GaN growth, adjust extension and build brilliant reaction room temperature at 600 DEG C --- between 990 DEG C, it is that brilliant source participation growth high defect density layer containing C is built in part with the gas source containing methyl or ethyl, C doping is introduced, C content concentration 10 in high defect density layer containing C is controlled16——1020cm‑3, the thickness of high defect density layer containing C is controlled in 100nm --- between 1000nm.LED extension of the invention builds the light efficiency that chip improves the chip of prior art equivalent specifications LED epitaxial wafer preparation.
Description
Technical field
The present invention relates to LED extensions to build chip and preparation method thereof.It is more particularly related to gallium nitride base bloom
It imitates LED extension and builds chip and preparation method thereof.
Background technique
Gallium nitride based LED is one of semiconductor diode light emitting diode, and light emitting diode was occurred as soon as early in 1962,
Light emitting diode in the prior art is generally all made of the compound containing gallium, arsenic, phosphorus etc., electric energy can be converted into luminous energy,
It is made of as common diode PN junction, unilateal conduction, to light emitting diode plus after forward voltage, is injected from the area P
The electronics in the area P is injected into the hole in the area N and by the area N, the sky with the electronics in the area N and the area P respectively in a few micrometers near the PN junction
Cave is compound, generates the fluorescence of spontaneous radiation.The energy state that the light emitting diode of different materials is discharged by the difference of its material
It is different.When the amount that electrons and holes compound tense releases is different, the energy released is more, then the wavelength of the light issued
Shorter, gallium nitride based LED is usually used in light emitting diode from nineteen ninety, wide by its energy gap, thermal conductivity is big, dielectric constant is small,
Capability of resistance to radiation is strong, and stable chemical performance etc. becomes the Typical Representative of third generation semiconductor material, can generally be used to prepare anti-spoke
It penetrates, high frequency, high-power and High Density Integration electronic device, and may be used as blue, green, ultra-violet light-emitting element and light-detecting device
Deng, application field with the further investigation of gallium nitride based LED, constantly led to other on the basis of replacing traditional lighting field
Domain extension.
With the sustainable development of gallium nitride based LED industry, gallium nitride also becomes hot spot and the forward position of global semiconductor research
Field is known as another " engine " of IT industry, and market application end is carried forward vigorously, and on the other hand its technology end also flies prominent
The research and development pushed ahead vigorously so that the quality of gallium nitride based LED in the continuous improvement, price is always at walking low tendency.In this severe shape
Under gesture, each enterprise is the occupation rate for improving gallium nitride based LED market, in each existing remarkable ability in the research and development field of gallium nitride based LED, and is wherein mentioned
High photosynthetic efficiency is the most important thing of each business research, and light efficiency, that is, luminous efficiency is exactly luminous flux and puts power ratio, and unit is generally
lm/W.Luminous efficiency represents the energy conservation characteristic of light source, this is an important indicator for measuring modern light source performance.Each enterprise is confused
It has confusingly put into a large amount of manpower and material resources to be researched and developed in this index, sold in the market with this to improve oneself product
Point.
Summary of the invention
The object of the present invention is to provide a kind of gallium nitride base high light efficiency LED extensions to build chip preparation method, outside the LED for preparing it
Prolong and builds the gallium nitride quantum well layer that chip has low-defect-density, high quality.
Building chip it is a further object to provide a kind of gallium nitride LED extension can be with the nitridation of equivalent specifications
Gallium LED just improves its light efficiency existing on the basis of technology, make it can be energy saving after applying to illuminator, and with it is existing
Gallium nitride based LED, which compares, improves luminous flux in same gallium nitride based LED that can be of the invention under power.
It is a further object to provide a kind of gallium nitride base high light efficiency LED extensions to build chip, it is made to be applied to hair
In body of light the light of long wavelength, such as yellow light, feux rouges can be sent out in the case where not needing fluorescent powder excitation.
In order to realize purposes and other advantages according to the present invention, a kind of gallium nitride base high light efficiency LED extension base is provided
The preparation method of chip prepares each portion that extension of the present invention builds chip by the method for being typically prepared gallium nitride based LED extension base chip
Point, but high defect density layer containing C is grown between N-shaped gallium nitride and Quantum Well, the growing method of high defect density layer containing C includes:
After completing N-shaped GaN growth, adjustment extension builds brilliant reaction room temperature at 600 DEG C --- between 990 DEG C, to contain methyl or second
The gas source of base is that brilliant source participation growth high defect density layer containing C is built in part, introduces C doping, controls in high defect density layer containing C
C content concentration 1016——1020cm-3, the thickness of high defect density layer containing C is controlled in 100nm --- between 1000nm.Then containing
In grown quantum trap on C high defect density layer.
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein the defect containing C high is close
It is that MOCVD epitaxy builds brilliant reaction chamber that the extension for spending layer growth, which builds brilliant reaction chamber, is adjusted phase after completing N-shaped GaN growth
Brilliant source and growth temperature should be built, the growth of high defect density layer containing C is directly entered.
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein described inside and outside MOCVD
When prolonging base crystalline substance during growth high defect density layer containing C, wherein being partially to build crystalline substance source to participate in the gas source containing methyl or ethyl
High defect density layer containing C is grown, the gas source containing methyl or ethyl is trimethyl gallium TMGa or triethyl-gallium TEGa.
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein described inside and outside MOCVD
When prolonging base crystalline substance during growth high defect density layer containing C, the gallium source containing gallium being passed through in MOCVD is organic gallium source trimethyl gallium
TMGa。
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein described inside and outside MOCVD
When prolonging base crystalline substance during growth high defect density layer containing C, it is constantly passed through the mixing of chlorine or chloride or chlorine and chloride
Catalyzed gas of the gas as growth high defect density layer containing C.
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein the defect containing C high is close
Chloride is hydrogen chloride gas in the catalyzed gas being introduced into MOCVD in degree layer growth course.
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein the high defect concentration
Layer epitaxially grown temperature is selected from: between 850 DEG C -990 DEG C.
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, completes high defect density layer containing C
After growth, the growing gallium nitride Quantum Well in high defect density layer containing C adjusts growth rate in 0.2A/sec --- 1.2A/sec
Between, 100 DEG C > w > 0 DEG C, Quantum Well quantity >=7 pair introduce C in gallium nitride Quantum Well and mix for trap and growth temperature difference w control of heap of stone
Miscellaneous, it is 10 that C, which accumulates concentration range,16——1020cm-3。
Gallium nitride base high light efficiency LED extension of the present invention builds the preparation method of chip, wherein described in gallium nitride
C doping is introduced in Quantum Well, to adulterate in third to introducing C in the Quantum Well after Quantum Well, after third is to Quantum Well
Quantum Well in C accumulation concentration range be 1016——1020cm-3。
Gallium nitride base high light efficiency LED extension of the present invention builds the gallium nitride base high photosynthetic efficiency of the preparation method preparation of chip
LED extension builds chip, and epitaxial layer successively includes: buffer layer: it is slow to build growing gallium nitride between brilliant substrate in N-shaped gallium nitride and extension
Rush layer；
N-shaped gallium nitride: it is grown on gallium nitride high defect density layer, under Quantum Well；
High defect density layer containing C: between Quantum Well and N-shaped gallium nitride；
Quantum Well: for luminescent layer, between high defect density layer and p-type gallium nitride；
P-type gallium nitride: it is grown on gallium nitride Quantum Well.
The LED chip of chip preparation is built with gallium nitride base high light efficiency LED extension of the present invention, comprising: substrate, buffering
Layer, N-shaped gallium nitride, high defect density layer containing C, Quantum Well, p-type gallium nitride and the n electricity on N-shaped gallium nitride and p-type gallium nitride
Pole and P electrode.
The present invention is include at least the following beneficial effects:
By the research to gallium nitride based LED extension base chip, the defect that discovery extension builds chip will affect the present inventor
Epitaxial quality, but defect not enough will affect luminous intensity again, the inventors found that being nitrogenized before Quantum Well growth in N-
One layer of high defect density layer containing C is grown on gallium, defect concentration is opened, and extension is built the defects of brilliant process and is all concentrated as far as possible
It in this layer, is no longer needed for introducing defect in grown quantum trap, brilliant quality and later period preparation can be built not influencing extension
The desalination gallium LED extension that the prior art is effectively improved under the premise of electrical property at illuminator builds chip and is prepared into shining for illuminator
Intensity.
The present inventor is by the research to gallium nitride base high light efficiency LED extension base chip, and discovery is in preparation containing C's
When high defect density layer, the content concn 10 of the C of high defect density layer16——1020cm-3, high defect density layer with a thickness of
100nm --- the light efficiency that gallium nitride LED extension builds chip when between 1000nm reaches best.
The present inventor is by building the high defect density layer containing C in chip to gallium nitride base high light efficiency LED extension
It is found in research preparation process, when preparing high defect density layer, gallium source selects trimethyl gallium, and growth temperature selects 850 DEG C -990
Between DEG C, and during the growth process using chlorine or hydrogen chloride gas as catalyzed gas when the matter of the high defect density layer containing C that grows
Amount is best, and base crystals growth is fastest, and the gallium nitride based LED extension of preparation is built chip and reached most for light efficiency in the illuminator in later period
It is good.
The present inventor by gallium nitride base high light efficiency LED extension build chip the study found that in the defect containing C high
The Quantum Well grown after density layer improves, and makes its multiple quantum wells, Quantum Well >=7 pair, and in gallium nitride Quantum Well
Doping C is introduced, it is 10 that C, which accumulates concentration range,16——1020cm-3, can effectively improve gallium nitride based LED extension base chip and be applied to
In illuminator, emission wavelength can be improved without using fluorescent powder excitation.
Further advantage, target and feature of the invention will be partially reflected by the following instructions, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Detailed description of the invention
Figure of description is in order to which the present invention is explained further, and is not the limitation to invention protection scope of the invention.
Fig. 1 is that the general gallium nitride based LED extension of the prior art builds chip architecture schematic diagram.
Fig. 2 is that gallium nitride high light efficiency LED extension of the present invention builds chip architecture schematic diagram A.
Fig. 3 is that gallium nitride high light efficiency LED extension of the present invention builds chip architecture schematic diagram B.
Fig. 4 is that gallium nitride high light efficiency LED extension of the present invention builds chip architecture schematic diagram C.
Specific embodiment
Embodiment of the disclosure is described in the description.The disclosed embodiments are only example, and other are implemented
Example can take various and alternative form.It is digital not necessarily to scale；Certain functions may be exaggerated or minimized, to show spy
Determine the details of component.Therefore, disclosed specific structure and function detail are not necessarily to be construed as restrictive, but only as introduction
The representative basis of the various Application Examples of those skilled in the art.
With reference to embodiment, the present invention will be further described in detail, to enable those skilled in the art join
Book text can be implemented accordingly as directed, rather than the limitation to invention scope of the present invention.
Embodiment 1
It is as shown in Figure 1 that the general gallium nitride based LED extension of the prior art builds chip architecture schematic diagram, comprising: sapphire extension builds brilliant lining
Bottom 1, buffer layer 2, N-shaped gallium nitride 3, Quantum Well 4, p-type gallium nitride 5, the present invention is on the basis of the prior art as shown in Figure 2
Include one layer of high defect density layer 6 between Quantum Well 4 and N-shaped gallium nitride 5, C, high defect are wherein contained in high defect density layer 6
High defect concentration in density layer 6 is to be introduced during building brilliant by C, is used for improve the gallium nitride based LED extension base chip later period
The light efficiency of illuminator, content concn of the C in high defect density layer 6 preferably 1018cm-3Left and right, high defect density layer are very thin one
Layer, thickness control is for 100nm --- between 1000nm.
Embodiment 2
As shown in Fig. 2, gallium nitride high light efficiency LED extension of the present invention builds the preparation method of chip, comprising:
Sapphire extension is built brilliant substrate 1 and is put into MOCVD by a.
Extension builds crystals growth buffer layer 2, N-shaped CaN3 to b on a sapphire substrate.
For c after extension builds the complete N-shaped CaN of crystals growth, controlling epitaxial growth temperature in MOVCD is 910 DEG C or so, in MOCVD
The gallium source being passed through is trimethyl gallium, while being passed through chlorine, carries out extension and builds crystals growth high defect density layer 6, control controls high lack
The concentration range for falling into C in density layer 6 is 1019cm-3Left and right, the thickness control of high defect density layer is with a thickness of 100nm ---
Between 1000nm；
After d has grown high defect density layer 6, grown quantum trap 4 and p- gallium nitride layer 5 on high defect density layer 6.
Embodiment 3
As shown in figure 3, gallium nitride high light efficiency LED extension of the present invention builds the preparation method of chip, comprising:
Sapphire extension is built brilliant substrate 1 and is put into MOCVD by a.
Extension builds crystals growth buffer layer 2, N-shaped CaN3 to b on a sapphire substrate.
For c after extension builds the complete N-shaped CaN of crystals growth, controlling epitaxial growth temperature in MOVCD is 910 DEG C or so, in MOCVD
The gallium source being passed through is trimethyl gallium, while being passed through chlorine, carries out extension and builds crystals growth high defect density layer 6, control controls high lack
The concentration range for falling into C in density layer 6 is 1019cm-3Left and right, the thickness control of high defect density layer is with a thickness of 100nm ---
Between 1000nm；
After d has grown high defect density layer 6, the grown quantum trap 41 on high defect density layer 6, epitaxial growth temperature range
At 870 DEG C or so, the gallium source being passed through in MOCVD is trimethyl gallium, while being continually fed into chlorine for control, and control Quantum Well 41 is grown
Rate is 1.2A/sec or so, and the concentration range of C is 10 in Quantum Well 4117cm-3Left and right, extension build crystals growth and C accumulation are distributed with
Multiple quantum wells 41, Quantum Well 41 number >=7 pairs；
Extension builds crystals growth p-type CaN5 on e Quantum Well.
Embodiment 4
As shown in figure 3, gallium nitride high light efficiency LED extension of the present invention builds the preparation method of chip, comprising:
Sapphire extension is built brilliant substrate 1 and is put into MOCVD by a.
Extension builds crystals growth buffer layer 2, N-shaped CaN3 to b on a sapphire substrate.
For c after extension builds the complete N-shaped CaN of crystals growth, controlling epitaxial growth temperature in MOVCD is 910 DEG C or so, in MOCVD
The gallium source being passed through is trimethyl gallium, while being passed through chlorine, carries out extension and builds crystals growth high defect density layer 6, control controls high lack
The concentration range for falling into C in density layer 6 is 1019cm-3Left and right, the thickness control of high defect density layer is with a thickness of 100nm ---
Between 1000nm；
After d has grown high defect density layer 6,3 pairs of carbon-free Quantum Well 42 are grown on high defect density layer 6, are controlled later
Epitaxial growth temperature processed is at 870 DEG C or so, and the gallium source being passed through in MOCVD is trimethyl gallium, while being continually fed into chlorine, control amount
Sub- 42 growth rate of trap is 1.2A/sec or so, and the concentration range of C is 10 in Quantum Well 4217cm-3Left and right, total Quantum Well numerical control
System is at >=7 pairs；
Extension builds crystals growth p-type CaN5 on e Quantum Well.
It is readily apparent that those skilled in the art can obtain from the various structures of embodiment according to the present invention
Obtain the various effects not yet referred directly to according to unpainful each embodiment.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With.It can be applied to various suitable the field of the invention completely.It for those skilled in the art, can be easily
Realize other modification.Therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (11)
1. the preparation method that a kind of gallium nitride base high light efficiency LED extension builds chip, which is characterized in that be included in N-shaped gallium nitride with
High defect density layer containing C is grown between Quantum Well, the growing method of high defect density layer containing C includes: to complete N-shaped GaN growth
Afterwards, adjustment extension builds brilliant reaction room temperature at 600 DEG C --- between 990 DEG C, using the gas source containing methyl or ethyl as part
It builds brilliant source and participates in growth high defect density layer containing C, introduce C doping, control C content concentration 10 in high defect density layer containing C16——
1020cm-3, the thickness of high defect density layer containing C is controlled in 100nm --- between 1000nm.
2. the preparation method that gallium nitride base high light efficiency LED extension according to claim 1 builds chip, which is characterized in that its
Described in the extension of the growth of high defect density layer containing C to build brilliant reaction chamber be that MOCVD epitaxy builds brilliant reaction chamber, complete N-shaped nitridation
It is adjusted corresponding base crystalline substance source and growth temperature after gallium growth, is directly entered the growth of high defect density layer containing C.
3. the preparation method that gallium nitride base high light efficiency LED extension according to claim 2 builds chip, which is characterized in that its
Described in when extension builds brilliant in MOCVD during growth high defect density layer containing C, wherein with the gas source containing methyl or ethyl
Brilliant source is built for part and participates in growth high defect density layer containing C, and the gas source containing methyl or ethyl is trimethyl gallium TMGa or three second
Base gallium TEGa.
4. the preparation method that gallium nitride base high light efficiency LED extension according to claim 3 builds chip, which is characterized in that its
Described in when extension builds brilliant in MOCVD during growth high defect density layer containing C, the gallium source containing gallium being passed through in MOCVD is
Organic gallium source trimethyl gallium TMGa.
5. the preparation method that gallium nitride base high light efficiency LED extension according to claim 1 builds chip, which is characterized in that its
Described in when extension builds brilliant in MOCVD during growth high defect density layer containing C, be constantly passed through chlorine or chloride or chlorine
Catalyzed gas of the mixed gas of gas and chloride as growth high defect density layer containing C.
6. the preparation method that gallium nitride base high light efficiency LED extension according to claim 5 builds chip, which is characterized in that its
Described in the catalyzed gas that is introduced into MOCVD in the growth course of high defect density layer containing C chloride be hydrogen chloride gas.
7. the preparation method that gallium nitride base high light efficiency LED extension according to claim 1 builds chip, which is characterized in that its
Described in high defect density layer epitaxial growth temperature be selected from: between 850 DEG C -990 DEG C.
8. gallium nitride base high light efficiency LED extension according to claim 1-7 builds the preparation method of chip, feature
It is, after completing the growth of high defect density layer containing C, the growing gallium nitride Quantum Well in high defect density layer containing C, adjustment growth speed
Rate is in 0.2A/sec --- and between 1.2A/sec, trap and growth temperature difference w control of heap of stone are in 100 DEG C > w > 0 DEG C, Quantum Well quantity >=7
It is right, C doping is introduced in gallium nitride Quantum Well, it is 10 that C, which accumulates concentration range,16——1020cm-3。
9. the preparation method that gallium nitride base high light efficiency LED extension according to claim 8 builds chip, which is characterized in that its
Described in gallium nitride Quantum Well introduce C doping, for third in the Quantum Well after Quantum Well introduce C doping,
It is 10 that third, which accumulates concentration range to C in the Quantum Well after Quantum Well,16——1020cm-3。
10. -9 described in any item gallium nitride base high light efficiency LED extensions build the preparation method preparation of chip according to claim 1
Gallium nitride base high light efficiency LED extension builds chip, which is characterized in that epitaxial layer successively includes: buffer layer: in N-shaped gallium nitride and outside
Prolong growing gallium nitride buffer layer between the brilliant substrate in base；
N-shaped gallium nitride: it is grown on gallium nitride high defect density layer, under Quantum Well；
High defect density layer containing C: between Quantum Well and N-shaped gallium nitride；
Quantum Well: for luminescent layer, between high defect density layer and p-type gallium nitride；
P-type gallium nitride: it is grown on gallium nitride Quantum Well.
11. building the LED chip of chip preparation with gallium nitride base high light efficiency LED extension described in any one of claim 10, it is characterised in that
It include: substrate, buffer layer, N-shaped gallium nitride, high defect density layer containing C, Quantum Well, p-type gallium nitride and in N-shaped gallium nitride and p
N-electrode and P electrode on type gallium nitride.
Priority Applications (1)
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