CN1100198A - Semiconductor type differential pressure measurement apparatus and method for manufacturing the same - Google Patents
Semiconductor type differential pressure measurement apparatus and method for manufacturing the same Download PDFInfo
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- CN1100198A CN1100198A CN 93117514 CN93117514A CN1100198A CN 1100198 A CN1100198 A CN 1100198A CN 93117514 CN93117514 CN 93117514 CN 93117514 A CN93117514 A CN 93117514A CN 1100198 A CN1100198 A CN 1100198A
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Abstract
The semiconductor-type differential pressure measurer contains a measuring diaphragm with fixed periphery and two measuring chambers at both sides of the diaphragm. If an overpressure is applied, the measuring diaphragm can not be damaged as it is directly supported by the wall of measuring chamber, so not needing overpressure protector.
Description
The present invention relates to a kind of small and exquisite and cheap differential pressure measuring installation, this device has a kind of simple structure and still very exquisite, can make the protection mechanism of not being with any pressure hull or any anti-overvoltage, and does not have withstand voltage impermeability terminal.
The invention still further relates to a kind of semiconductor type differential pressure measurement apparatus, this device comprises a measuring diaphragm, and the diaphragm both sides are provided with two measuring chambers that a predetermined space is respectively arranged, so that when overvoltage puts on measuring diaphragm, they immediately measured locular wall support; This device is directly the detecting element of the strain detector of measuring pressure reduction as overvoltage, thereby is a kind of semiconductor type differential pressure measurement apparatus of simple and inexpensive and is highly reliable for detecting overvoltage.
The invention further relates to a kind of manufacture method of semiconductor type differential pressure measurement apparatus, this method is cheap and can makes the diaphragm with high-precision thickness.
The invention still further relates to a kind of method of making semiconductor type differential pressure measurement apparatus with the sacrificial layer etching method, can not make diaphragm be adsorbed in substrate by this method.
Fig. 1 is the key diagram of prior art structure.For example, can mean " the not examination Japanese patent application of an announcement " referring to " JP-A-" printed words that JP-A-59-56137(quotes here) Fig. 1.
Referring to Fig. 1, in the both sides of a housing 1, and one be used for introducing and have pressure P by means of welding or similar approach assembly for flange 2 and another flange 3
HThe import 5 of high-pressure fluid and one be used for introducing and have pressure P
LThe import 4 of low-pressure fluid be located on two flanges 2 and 3.In the housing inner pressure survey chamber 6 that has been equipped with center diaphragm 7 and silicon diaphragm 8 that forms 1.
Each is fixed in center diaphragm 7 and silicon diaphragm 8 separately on the wall of pressure survey chamber 6, chamber 6 separated into two parts.Support plate 6A and 6B are arranged in such a way on the wall of pressure survey chamber 6, and promptly they are towards center diaphragm 7.The periphery of center diaphragm 7 is welded in housing 1.
The impermeability terminal is supported by support 9.Support 9 towards the end of pressure measurement chambers 6 with low-melting glass or similar thing fixed bonding silicon diaphragm 8.
Pressure is introduced chamber 10 and 11 and is located between housing 1 and each flange 2 and 3. Liquid isolation diaphragm 12 and 13 further is arranged on pressure and introduces chamber 10 and 11 inside, and the support plate 10A and the 11A that have with liquid isolation diaphragm 12 and 13 similar shapes be formed on the wall of housing 1 by this way, and promptly they are towards liquid isolation diaphragm 12 and 13.
Said structure is transmitted from the high-pressure side applied pressure, and way is that the pressure that puts on liquid isolation diaphragm 13 is delivered to silicon diaphragm 8 via the liquid part 102 that seals.On the other hand, when a pressure when low-pressure side applies, the pressure that puts on liquid isolation diaphragm 12 is delivered to silicon diaphragm 8 via the liquid part 101 of sealing.
Therefore, can see what silicon diaphragm 8 was done to be out of shape by the pressure reduction between the pressure of on high-tension side pressure and low-pressure side.This deflection, i.e. strain is taken out so that measure differential pressure with electrical method by strain resistor 80.
Yet device described above has following shortcoming:
(1) because the pressure P of differential pressure measuring installation one side
HAct on sensor around, the outside of sensor must be surrounded by a pressure vessel;
(2) need a withstand voltage airtight sealing terminal so that electric signal is fetched into outside the device;
(3) making sensor must be with a kind of manufacture method of complexity, because machining is all wanted on the silicon wafer two sides; And
(4) an overvoltage protection mechanism should be set separately, because sensor does not have the salvo of this anti-overvoltage alone.
The invention provides the device that overcomes the problems referred to above.
One object of the present invention is to provide economically a kind of protection mechanism without any special pressure hull or independent opposing overvoltage, and need not any withstand voltage the airtight sealing terminal, high performance small and exquisite differential pressure measuring installation.
Fig. 1 is the key diagram of the structure of a kind of common unit of expression;
Fig. 2 is the key diagram of expression according to the important structure of one embodiment of the present of invention;
Fig. 3 is the cut-open view that the line A-A along Fig. 2 is got;
Fig. 4 is the cut-open view that the line B-B along Fig. 2 is got;
Fig. 5 is the further explanatory drawings of a pith in the presentation graphs 2;
Fig. 6 is the further explanatory drawings of a pith in the presentation graphs 2;
Fig. 7 is the key diagram of the etching step of structure shown in the presentation graphs 2;
Fig. 8 is the vertical view of structure shown in Fig. 7;
Fig. 9 is the key diagram of epitaxial growth steps in the structure shown in the presentation graphs 2;
Figure 10 is the key diagram of the polishing step of structure shown in the presentation graphs 2;
Figure 11 is the key diagram that forms the step of concave portions shown in the presentation graphs 2 in the structure;
Figure 12 is the key diagram of the perforation step of structure shown in the presentation graphs 2;
Figure 13 is the key diagram of the etching step of structure shown in the presentation graphs 2;
Figure 14 is the key diagram of the engagement step of structure shown in the presentation graphs 2;
Figure 15 is the key diagram of expression according to the important structure of another embodiment of the present invention;
Figure 16 is the further explanatory drawings of a pith in the presentation graphs 2;
Figure 17 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 18 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 19 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 20 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 21 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 22 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 23 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 24 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 25 is the key diagram of a kind of operation of structure shown in expression Figure 16;
Figure 26 is the key diagram of expression according to the important structure of another embodiment of the present invention;
Figure 27 is the cut-open view that the line C-C along Figure 26 is got;
Figure 28 is the further explanatory drawings of a pith among expression Figure 27;
Figure 29 is the key diagram at the pith of the embodiment of the device of the judgement overvoltage of structure shown in Figure 26;
Figure 30 is the key diagram of a kind of operation of structure shown in expression Figure 26;
Figure 31 is the key diagram of a kind of operation of structure shown in expression Figure 26;
Figure 32 is the key diagram of expression according to the etching step of another embodiment of the present invention;
Figure 33 is expression forms the step of another epitaxially grown layer 205 according to the present invention a key diagram;
Figure 34 is expression forms the step of another silicon oxide layer 206 according to the present invention a key diagram;
Figure 35 is expression forms the step of another epitaxially grown layer 207 according to the present invention a key diagram;
Figure 36 is the key diagram of expression according to another polishing step of the present invention;
Figure 37 is another step of silicon oxide layer 206 is removed in expression according to the present invention a key diagram;
Figure 38 is expression forms another step of concave portions 208 according to the present invention a key diagram;
Figure 39 is expression passes another step in hole 209 according to the present invention a key diagram;
Figure 40 is another step of silicon oxide layer 203 is removed in expression by etching according to the present invention a key diagram;
Figure 41 is the key diagram of expression according to another engagement step of the present invention;
Figure 42 is the key diagram of expression according to the etching step of another embodiment of the present invention;
Figure 43 is the vertical view of structure shown in Figure 42;
Figure 44 is expression forms the step of another epitaxially grown layer 305 according to the present invention a key diagram;
Figure 45 is the key diagram of expression according to another polishing step of the present invention;
Figure 46 is expression forms the another step of concave portions 306 according to the present invention a key diagram;
Figure 47 is expression passes the another step in hole 307 according to the present invention a key diagram;
Figure 48 is the another step of silicon oxide layer 303 is removed in expression by etching according to the present invention a key diagram;
Figure 49 is the key diagram of expression according to another engagement step of the present invention;
Figure 50 is that expression is according to the key diagram of the Etaching device of an embodiment more of the present invention;
Figure 51 is that expression is according to the key diagram of a kind of operation of an embodiment more of the present invention;
Figure 52 is that expression is according to the also key diagram of the operation of an embodiment of the present invention; And
Figure 53 is the key diagram of expression according to the operation of another embodiment of the present invention.
Fig. 2 is the key diagram according to the pith of one embodiment of the present of invention.The cut-open view that Fig. 3 draws and got along the line A-A of Fig. 2, and Fig. 4 is the cut-open view that the line B-B along Fig. 2 is got.
In these figure, have with the part of the identical functions of person shown in Fig. 1 with identical symbolic representation.Only explain the part different below with person shown in Fig. 1.
Referring to Fig. 2, first Room 21 with an extremely narrow predetermined space is arranged on the silicon chip 22 to form a diaphragm 23.
First intercommunicating pore 24 that is communicated with first Room 21 at the one end forms on substrate 22, and film concave portions 25 is arranged in the diaphragm 23 and be positioned at the reverse side of the face that forms first Room 21.
Strain detecting element 27 be arranged on diaphragm 23 on the side of concave portions 25.
Also, form line 31 by introducing impurity in the composition surface between silicon chip 22 and bearing substrate 28, and it is received strain detecting element 27 at the one end referring to Fig. 5.
Again referring to Fig. 5, contact 32 be arranged at bearing substrate 28 with the engagement sides of silicon chip 22 on, and at one end receive line 31.
As shown in Figure 5, near contact 32, forming a groove 33 on the silicon chip 22.Groove 33 give with silicon chip 22 and contact 32 between suitable repulsive force of contact portion with stable contacting between assurance contact 32 and the line 31.
Also referring to Fig. 6, a filtration fraction 41 is arranged at silicon chip 22 and enters first Room 21 or chamber 29 in case the fluid stopping body is foreign material contained in the pressure medium.In this embodiment, in structure, form two filtration fractions.
Disadvantageous powder or granule foreign are to avoid for filtration fraction 41 provides an enough little gap d by the utilization semiconductor fabrication process.That is to say that the gap d of filtration fraction 41 forms by this way, promptly this gap can be little be enough to satisfy that relational expression d≤(A-B), A represents the interval of first Room 21 in the formula, and B represents the displacement of diaphragm 23.One side of filtration fraction 41 is linked first intercommunicating pore 24, and opposite side is linked chamber 29 via second intercommunicating pore 42.
First connecting hole 51 that is used for introducing pressure forms and links a side of filtration fraction 41 on bearing substrate 28.The other end in this hole 51 keeps logical atmosphere.
Second connecting hole 52 that is used for introducing pressure forms and links a side of filtration fraction 41 on bearing substrate 28.The other end in this hole 52 keeps logical atmosphere.
In structure as above, on high-tension side gaging pressure acts on first Room 21 and the gaging pressure of low-pressure side acts on chamber 29.
As a result, silicon diaphragm 23 is out of shape according to the pressure reduction between high-pressure side and the low-pressure side, and the strain that so produces is detected with electrical method by strain detecting element 27.So,, can measure differential pressure by strain is fetched into the outside as electric signal via lead-in wire 31 and contact 32.
When overvoltage acted on first Room 21, the wall of chamber 29 was supported diaphragm 23.When overvoltage acted on chamber 29, the wall of first Room 21 was supported diaphragm 23.
The technological process that manufacturing has a device of said structure contrasts the drawn sequential steps of Fig. 7 to 14 below and describes.
Referring to Fig. 7, the figure of wanting 102 is at the SOI(silicon on insulator) reactive ion that strengthens by RIE(on the wafer 101) silicon oxide layer 103 of etching and a silicon layer 104 etch.The vertical view of drawn structure provides in Fig. 8 among Fig. 7.
An epitaxially grown layer 105 forms on the surface of SOI wafer 101, as shown in Figure 9.
Referring to Figure 11, the surface of epitaxially grown layer 105 is etched with by the RIE etching method and forms a concave portions 106.
As shown in Figure 12, be used for the hole 107 usefulness RIE etching methods of the silicon oxide layer 103 that etching imbeds or potassium hydroxide wet etching and form.
The surface of silicon oxide layer 103 is next etched with aqueous hydrogen fluoride solution or hydrogen fluoride gas, as shown in Figure 13.
The structure that obtains like this has the following advantages device:
(1) can obtain device, because the outside of differential pressure pick-up can be exposed to atmospheric pressure without any special pressure vessel;
(2) for electric signal being fetched into the outside, device does not need high voltage bearing airtight sealing terminal;
(3) because silicon wafer is only processed from a side, manufacturing process can be simplified;
(4) device does not need the protection mechanism of independent anti-overvoltage, because sensor itself has been equipped with such mechanism; And
(5) can advantageously obtain not having the differential pressure measuring installation of noise, because can avoid extraneous interference strain propagation effectively to diaphragm 23 by first Room 21, chamber 29 with around second Room 26 of diaphragm 23.
From as can be seen above, the present invention provides a kind of protection mechanism without any special pressure hull or independent anti-overvoltage economically, and need not any withstand voltage the airtight sealing terminal, high performance small and exquisite differential pressure measurement device.
Figure 15 is the key diagram of expression according to the pith of the device of another embodiment of the present invention, describes the structure of this device referring to Figure 15.
According to the device of present embodiment, it is characterized in that on bearing substrate 28, being provided with the 3rd connecting hole 54 that is used for introducing pressure and directly is communicated to chamber 29.
Certainly SOI substrate not only, and above the silicon oxide film of composition is arranged and the silicon chip of the polysilicon of further having grown can be used for process for making in the above.
In the device that draws in Figure 16, strain detecting element 271 and 272 generally is arranged on the diaphragm 23 by this way, promptly reaches maximum sensitivity.More particularly, arrangements of elements is at the center of diaphragm 23 and another is arranged in the edge of diaphragm 23, so that they may stand anti-phase operation.
Differential pressure measuring installation shown in Fig. 2 directly bears overvoltage with diaphragm 23.Therefore, if measuring diaphragm 23 displacements and displacement surpass predetermined space then have been supported in first Room 21 of measuring chamber effect or the wall of chamber 29 immediately.
This shows that the strain that produces stands a kind of nonlinear variation on strain detecting element 271 and 272.
Be shown in Figure 17 by the relation between strain detecting element 271 and 272 strains that detected and the institute's applied pressure.The represented curve of A and B is respectively by detecting element 271 and 272 resulting strain curves among the figure, and the represented curve correspondence of C poor by detecting element 271 and 272 resulting strains.
The process that detects overvoltage with strain detecting element 271 and 272 is described below.
(1) referring to the strain detecting element 272 that is arranged in diaphragm 23 centers as shown in Figure 18, when overvoltage can detect stretching strain when direction shown in the arrow D applies before diaphragm 23 is run into the wall of first Room 21.
As can be seen from Figure 19, in case diaphragm contact with the wall of first Room 21 then detect compressive strain rather than stretching strain.In the process of the wall expansion of first Room 21, strain changes stretching strain once more at ensuing diaphragm 23, and the wall of first Room 21 is supported diaphragm 23 as shown in Figure 20.Therefore, the strain that is detected by strain detecting element 272 when applying overvoltage changes to decline from rising, and then changes to rising.This variation of the strain that detects is drawn in the curve map of Figure 21.
From as can be seen above, between institute's applied pressure and single strain that is detected by strain detecting element 272, do not concern one to one.Therefore, seen at the curve map of Figure 22, the strain stress that is detected can not show an overvoltage clearly, because reading strain can be seen as the pressure P 1 that allows in the range, can be seen as the pressure P 2 that belongs to overvoltage region again.
(2) by the strain that strain detecting element 271 detected that is arranged in diaphragm 23 edges dull rising along with the rising of being exerted pressure.This means that exert pressure and strain relation are to concern one to one and overvoltage can be judged according to the strain that is detected.
Yet, can see that it is subject to the influence of various conditions variations when considering actual uses of detecting element 271, such as the variation of static pressure and temperature aspect.For example, when also acting on static pressure except differential pressure, the strain that is detected by strain detecting element 271 comprises an additional offset.Therefore, may be provided curve F as shown in same curve map by translation by the real emergent property curve shown in the E in the curve map of Figure 23.If should determined one-tenth ε in the initial strain of excessive rolling, then actual overvoltage may slide into P4 from P3, and it is impossible that detecting of it become.
(3) so, in order to eliminate the influence of static pressure, temperature etc., can calculate from the difference of the output signal of strain detecting element 271 and 272 and with it and judge overvoltage.
Yet this method is infeasible, because still do not have and exert pressure relation one to one from strain detecting element 271 and 272 resulting signal difference.This can be clear that in Figure 24.Exert pressure and the strain signal difference that detected between relation in lack one to one that reason it is believed that as follows.That is to say that strain detecting element 271 gets too fast from the compressive deformation recovering state, even so that detected signal difference between the detecting element 271 and 272, can not obtain under a kind of like this overpressure condition descending or the output of dull rising signals as dull.
In Figure 25, provide the overvoltage that applied with by the strain relation (curve G) that strain detecting element 272 detected and the strain relation (curve H) of exerting pressure and being detected by strain detecting element 271.
From as seen above, can not enough detect overvoltage exactly with any in above-mentioned three kinds of methods.
In addition, can consider except that strain detecting element 271 and 272, to be provided with a device that is used for detecting the detecting element of overvoltage.Yet being provided with of additional strain detecting element that is used for detecting overvoltage need comprise new structure and circuit.This causes the increase of manufacturing cost inevitably and comprise additional processing step in manufacture method.
In Figure 26, draw according to the key diagram of the important structure of another embodiment of the present invention.The cut-open view that Figure 27 draws and gets along the line C-C of Figure 26.
In these figure, have with the part of the identical functions of person shown in Fig. 2 with identical symbolic representation.Only explain the part different below with person shown in Fig. 2.
The first strain detecting element 61 is arranged in the marginal portion of measuring diaphragm 23.The second strain detecting element 62 is arranged in the position of departing from diaphragm 23 centers a little by this way, so that the output signal of this detecting element and can be used as single-valued function from the difference between the output signal of the first strain detecting element 61 and change (be signal difference exert pressure with institute be one to one).
Provide a kind of and be used for detecting the device 63 of overvoltage so that judgement space overvoltage has applied not to be had, this device detects from the signal difference between the signal of the first strain detecting element 61 and the second strain detecting element 62.For example, referring to Figure 29, the device 63 that is used for detecting excess pressure may comprise a CPU(CPU (central processing unit)) 65, so that to asking difference to calculate from the signal of the first strain detecting element 61 and the second strain detecting element 62, and the judgement signal that will draw after will making comparisons this signal difference and a standard signal 67 with comparer 66 judges that as overvoltage signal 68 exports.
From by the resulting result of calculating among CPU65, also export one by the detecting signal 71 of the difference of measuring pressure.
In having the device of said structure, the gaging pressure of on high-tension side gaging pressure and low-pressure side acts on the measuring chamber 21 and 29 that is arranged on measuring diaphragm 23 both sides respectively.So silicon diaphragm 23 distortion are corresponding with the pressure reduction between executing high pressure and the low pressure.The strain that is produced by the distortion of diaphragm is detected with electrical method by strain detecting element 61 and 62, and outputs to the outside with the corresponding signal of strain via lead-in wire 31 and contact 32, to provide differential pressure.
When overvoltage acts on diaphragm 23, the diaphragm of measuring chamber 21 and one of 29 wall supporting deformation.
In Figure 30, provide the overvoltage that applied with by the strain relation (curve I) that strain detecting element 61 detected and the strain relation (curve J) of exerting pressure and being detected by strain detecting element 62.Graphical representation overvoltage shown in Figure 31 and relation by the difference of detecting element 61 and 62 strains that detected.
When being arranged in the center of diaphragm 23 strain detecting element 272 is in ordinary construction, the strain differential signal produces a family curve, and this curve table reveals from the wall time of contact of diaphragm 23 and measuring chamber 21 and 29 and begins unexpected decline.Can be about a kind of like this family curve referring to Figure 24.When this specific character contrast of common unit, according to the present invention, the characteristic that detects the difference device of strain produces the curve that dullness as shown in Figure 31 rises.Because strain can be expressed (i.e. the difference of the strain that detects and exert pressure be one to one) with the single-valued function of being exerted pressure, applied and do not had so can be easy to judge the space overvoltage.
It is believed that it is to relax this fact to some extent according to this advantage in the device of the present invention because the decline of the strain that strain detecting element 62 is detected is compared with the strain recovery suddenly in the common strain detecting element 272.More particularly, it is believed that stress recovers only to appear in the part of fixed part of strain detecting element 62 does not take place at other fixed parts.
From as seen above, in respect to the feature strain curve of being exerted pressure, do not produce decline from the difference of the strain that detects of strain detecting element 61 and 62, thereby it can be used for detecting overvoltage.
In sum, can obtain a kind of semiconductor type differential pressure measurement apparatus that can detect overvoltage with high-reliability.Utilization is equipped with the semiconductor differential pressure measuring installation of a measuring diaphragm 23 of can be soon being supported by the wall of chamber 21 and 29, can detect overvoltage with high-reliability, arrange to such an extent that depart from the center of diaphragm 23 a little as long as one of strain detecting element is an element 62, and just passable so as to the difference that calculates the strain that is detected by strain detecting element 62 and the strain detecting element 61 that on the marginal portion of diaphragm 23, forms.
In addition, can produce the device of not being with independent being used for to detect the strain detecting element of overvoltage, therefore, can obtain a kind of semiconductor type differential pressure measurement apparatus simply highly reliably economically with good and economic according to the present invention.
The position of the position of strain detecting element from common unit removed a little can obtain according to device of the present invention.Therefore can be according to device of the present invention by the slight variation in the semiconductor fabrication process, like change etched figure and so on promptly creates.So the traditional knowledge in the semiconductor manufacturing can be used for obtaining high finished product rate fully.
In a word, the present invention has realized a kind of simple and economic semiconductor type differential pressure measurement apparatus that can detect overvoltage with high-reliability.
Referring to the device that draws among Fig. 2, the precision that diaphragm 23 is finish-machined to the thickness of wanting depends on the polishing step shown in Figure 10.The polishing method generally produces the precision of about ± 5 μ m for the final thickness of 500 μ m, can't reach higher precision.Be used for being about 20 μ m according to the thickness of the diaphragm of device of the present invention.Yet the dimensional accuracy of ± 5 μ m is too big and the infringement yield rate.The low manufacturing cost that improved of yield rate.
Referring to Figure 32 to 41 describe be used for overcoming above problem according to another embodiment of the present invention.More particularly, explain the method for semiconductor type differential pressure measurement apparatus drawn in a kind of shop drawings 2.This method provides the device of a diaphragm of a kind of outfit, and the thickness of this diaphragm is controlled accurately, is again economical simultaneously.
Referring to Figure 32, the SOI wafer with a silicon oxide layer 203 and a silicon layer 204 is accepted RIE and is etched with and removes predetermined figure 202.In this case, for example, silicon chip 201 thickness are about 600 μ m, comprise the silicon oxide layer 203 of thick about 1 μ m and the silicon layer 204 of thick about 0.5 μ m on it.
An epitaxially grown layer 205 is at the thickness that grows on the surface of SOI wafer 201 about 20 μ m then.Resulting structure is shown in Figure 33.The thickness of diaphragm 23 depends on the thickness of this epitaxial growth layer 205.
Referring to Figure 35, grow an epitaxially grown layer 207 with preset thickness on the surface of the epitaxially grown layer 205 that obtains in front.Epitaxially grown layer 207 can form the thickness of for example about 5 μ m.
Referring to Figure 36, the structure of gained stands the selectivity polishing with silicon oxide film 206 as the restraining barrier.The polishing fluid that use is made up of the weakly alkaline solution that contains the colloidal silica (a kind of fine silica powder) that is suspended in wherein carries out this step by mechanical buffing.Because the polishing velocity of silicon is about 100 with the ratio of the polishing velocity of monox, thus polishing be no more than silicon oxide film 206.
Remove silicon oxide film 206 to provide the structure shown in Figure 37 by etching then.
On epitaxially grown layer 205, etch concave portions 208 to provide the structure shown in Figure 38 with the RIE etching method.
Referring to Figure 39, the hole 208 that is used for being etched in the silicon oxide layer 203 in the SOI wafer is by being etched in epitaxially grown layer 205 middle punches with RIE etching or potassium hydroxide.
Referring to Figure 40, silicon oxide layer 203 is to come etched with aqueous hydrogen fluoride solution or hydrogen fluoride gas.
The structure that obtains like this is easy to produce and comprises a semiconductor type differential pressure measurement apparatus that the diaphragm 23 of high precision thickness control is arranged.Diaphragm with high dimensional accuracy is by silicon oxide film of composition on the periphery surface of epitaxially grown layer 205 206 and after this silicon oxide film 206 is carried out the selectivity polishing as the restraining barrier and realize.Therefore, the method has the manufacturing cost that greatly reduces.In addition, obtaining thickness in this case is 20 μ m and the precision diaphragm 23 up to ± 0.5 μ m.
Certainly the SOI substrate can further be formed epitaxial loayer in the above by the monox diaphragm of top formation composition and the silicon chip that obtains replaces.
From as seen above, the invention provides a kind of method that is used for making semiconductor type differential pressure measurement apparatus that can realize the diaphragm of high dimensional accuracy economically.
Referring to the device that draws among Fig. 2, when first Room 21 that forms between diaphragm 23 and the silicon chip 22, can use a kind of sacrificial layer etching method.
The sacrificial layer etching method is a kind of like this method, wherein earlier between a substrate and a structural sheet (playing one deck of textural element effect) sacrifice layer is set, and only removes sacrifice layer to provide the opening between structure and the substrate with selective etch at last.About the details of this technology can referring to such as " being used for newly freezing and seasoning of sacrificial layer etching technology ", Japanese Electrotechnical Committee's year procceedings, 1992, the 4 volumes, No.397.
Yet Zhuan Zhi manufacturing runs into following problem as shown in Figure 2.
During dry diaphragm 23, diaphragm 23 tends to be adsorbed in silicon chip 22 by the surface tension of rinsing liquid, and the situation that diaphragm can not separate from silicon chip 22 at an easy rate often occurs after rinsing.
As a kind of means that overcome this problem, a kind of freezing and seasoning once proposed, it comprises freezes rinsing liquid before dry and makes the rinsing liquid distillation of freezing.Yet temperature that must control wafer in this method is melted with rinsing liquid during preventing to distil.Must prevent dewfall phenomenon when being fetched in the open air after distillation is finished to wafer.Therefore, this processing step that method repeatability is very poor and needs are complicated.
After silicon oxide layer 103 was etched, the surface of diaphragm 23 and silicon chip 22 became adhering, because hydroxidion (OH
-) group is still on the dangling bonds attached to surface silicon atoms.Because these OH
-Group is easy to mutual chemical combination and generates H
2O, silicon atom thereby by oxygen atom chemical combination.
Referring to Figure 42 to 49 describe overcome above problem according to another embodiment of the present invention.A kind of method of the semiconductor type differential pressure measurement apparatus of making the mutual adhesion that does not have diaphragm 23 and silicon chip 22 more particularly, is described below.
Referring to Figure 42, have silicon oxide layer 303 and add the SOI wafer of silicon layer 304 and stand RIE and be etched with and remove predetermined portions 302, Figure 43 provides the vertical view of structure shown in Figure 42.
On SOI wafer 301 surfaces, form epitaxially grown layer 305 then.Resulting structure is shown in Figure 44.
Referring to Figure 45, epitaxially grown layer 305 stands polishing to obtain minute surface.
Then, the epitaxially grown layer 305 that obtains like this stands RIE and is etched with and provides concave portions 306.Resulting structure is shown in Figure 46.
Referring to Figure 47, being used for the hole 307 that etching imbeds the silicon oxide layer 303 of SOI wafer is with RIE etching method or potassium hydroxide, by being etched in epitaxially grown layer 306 perforation.
Referring to Figure 48, this structure stands vapor phase etchant in the mixed gas that contains hydrogen fluoride gas and minor amount of water steam, uses silicon oxide layer 303 as sacrifice layer.The vapor phase etchant of sacrifice layer can such as contain in the mixed gas of 95% nitrogen, 4.99% the water vapor of fluoridizing hydrogen and 0.01% and carry out.Yet the mixing ratio of gas componant only provides certainly as an example, as long as vapor phase etchant can carry out therein, can use other gaseous mixture.
A kind ofly be shown schematically among Figure 50 according to Etaching device of the present invention.Referring to Figure 50, this device comprises a chamber K, and a specimen holder L has an etched wafer M who is contained on the seat.
Vapor phase etchant carries out according to the reaction principle of following expression in this device
Nitrogen (N
2) circulate so that from system, take away the silicon fluoride (SiF of gaseous state with enough quantity
4) and water (H
2O), thus prevent liquefaction.
So, can prevent that diaphragm 23 and silicon chip 22 from being adhered to mutually by the surface tension of residual liquid.
Wet etching process is at etching oxidation silicon (SiO
2) time produce silicon face shown in Figure 51.Can understand at an easy rate, as among Figure 52 schematically expression like that, diaphragm 23 and silicon chip 22 are easy to by chemical bonding closely and mutual chemical combination.
In according to method of the present invention, obviously different with top wet etching processing, silicon face end band fluorine atom provides even tolerates heat treated extremely inactive surface of 900 ℃.Can be about details referring to " purifying the evaluation on the surface of one 5. usefulness HF gas purification with anhydrous HF gas ", this literary composition is stated from " applied physics ", Vol.59, No.11(1990), the 1508th page.
From as seen above, come etching oxidation sacrificial silicon layer 303 with the vapor phase etchant method, not only avoid the adhesion of structural member in etching step, and an inactive surfaces is provided after etching.Therefore, this technology is preventing that aspect the adhesion be extremely effective.
At last, utilization uses the vapor phase etchant technology fluoridize hydrogen to come etching oxidation silicon to prevent the structural member surface adhesion that the surface tension of etching solution causes, and makes surface one-tenth non-adhesive by the silicon atom surface going with the fluorine atom etching to finish to be generated.
Referring to the described manufacture method of Figure 42 to 49, realize not having diaphragm 23 and the silicon chip 22 mutual semiconductor type differential pressure measurement apparatus that adhere to according to top according to another embodiment of the present invention.
Though at length and with reference to inventive embodiment described the present invention, for the professional in this field, obviously can within invention, change and revise and do not break away from the spirit and scope of the present invention.
Claims (9)
1, a kind ofly contain the semiconductor type differential pressure measurement apparatus that its both sides are provided with the measuring diaphragm of measuring chamber, this device is characterised in that further and comprises:
One by being arranged on a silicon chip and first Room that the predetermined space between the diaphragm that forms on the described silicon chip delimited;
First intercommunicating pore that is arranged on the described silicon chip, the one end is communicated with described first Room;
One be arranged on the described diaphragm, with the top opposed side of face that described first Room is set on concave portions;
Second Room that has sponson that is arranged on the described silicon chip, described second Room are communicated with described concave portions and are mounted to except that the described first intercommunicating pore place and surround described diaphragm with circular pattern;
Second intercommunicating pore that is arranged on the described silicon chip, the one end is communicated with described sponson;
One is arranged on the described diaphragm, forms the strain detecting element on the face of described concave portions thereon; And
A bearing substrate, its surface engages with the surface of the described concave portions that having of described silicon chip forms above, and described bearing substrate delimited described first Room and another chamber with described concave portions.
2, a kind of semiconductor type differential pressure measurement apparatus described in claim 1, wherein said supporting is made by pyrex.
3, a kind of semiconductor type differential pressure measurement apparatus described in claim 1, wherein said supporting is made by silicon.
4, a kind of semiconductor type differential pressure measurement apparatus described in claim 1, wherein said supporting is made by polysilicon.
5, a kind of semiconductor type differential pressure measurement apparatus described in claim 1 is characterized in that further comprising:
One that made by conductor and by introducing the line that impurity forms in the composition surface between described silicon chip and described bearing substrate, and it is connected to described strain detecting element at the one end;
One be arranged on the described bearing substrate with side that described silicon chip engages on, and be connected to the contact of described line at the one end; And
One near the groove that forms described contact on the described silicon chip, this groove give and described silicon chip and described contact between suitable repulsive force of contact portion.
6, a kind of semiconductor type differential pressure measurement apparatus described in claim 1 is characterized in that further comprising;
Each is arranged at the filtrator at a gap d place at the opposite end of described first and second intercommunicating pores, and described gap is little as to be enough to satisfy that relational expression d≤(A-B), A represents the interval of described first Room in the formula, and B represents the displacement of described diaphragm.
7, a kind ofly contain the semiconductor type differential pressure measurement apparatus that its both sides are provided with the measuring diaphragm of measuring chamber, this device is characterised in that further and comprises;
One by being arranged on a silicon chip and first Room that the predetermined space between the diaphragm that forms on the described silicon chip delimited;
First intercommunicating pore that is arranged on the described silicon chip, the one end is communicated with described first Room;
One be arranged on the described diaphragm, with the top opposed side, side that described first Room is set on concave portions;
Second Room that has sponson that is arranged on the described silicon chip, described second Room are communicated with described concave portions and are mounted to except that the described first intercommunicating pore place and surround described diaphragm with circular pattern;
Second intercommunicating pore that is arranged on the described silicon chip, the one end is communicated with described sponson;
A strain detecting element that is arranged on the face that forms described concave portions on the described diaphragm in the above;
The surface of the described concave portions that a bearing substrate, surperficial and having of described silicon chip form above engages, and described bearing substrate delimited described first Room and another chamber with described concave portions;
Marginal portion that is arranged in described diaphragm forms the first strain detecting element on the face of described concave portions in the above;
On the face that is arranged in the described concave portions of formation on the described measuring diaphragm, and be arranged in the locational second strain detecting element that departs from described measuring diaphragm center a little, the described second strain detecting element is arranged by this way, so that it can export a inversion signal with respect to the output signal of the described first strain detecting element within the measuring limit that allows at least, if described first and the signal difference of the output signal of the described second strain detecting element show as the single-valued function of being exerted pressure; And
A kind of device that is used for detecting overvoltage, it by detect described first and the difference of the output signal of the described second strain detecting element judge that the space overvoltage has applied and do not have.
8, a kind of manufacturing contains the method for semiconductor type differential pressure measurement apparatus that its both sides are provided with the measuring diaphragm of measuring chamber, and it comprises:
(a) predetermined portions of the monox of etching SOI wafer and silicon;
(b) allow epitaxially grown layer on the SOI wafer surface, form;
(c) on the surface of described epitaxially grown layer, form a silicon oxide layer, its predetermined portions of etching then earlier;
(d) further allow epitaxially grown layer on the surface of the described epitaxially grown layer that forms previously, form preset thickness, so as to allowing polysilicon layer on the surface of described silicon oxide film, grow;
(e) do the restraining barrier with described silicon oxide film, on resulting structure, carry out the selectivity polishing;
(f) on described epitaxial growth laminar surface, form a concave portions;
(g) by the RIE etching method or on described epitaxially grown layer, be formed for the hole of the silicon oxide layer in the etching SOI wafer by the etch process that uses potassium hydroxide;
(h) use aqueous hydrogen fluoride solution or hydrogen fluoride gas come the silicon oxide layer in the etching SOI wafer; And
(i) with anode process a bearing substrate is engaged with described SOI wafer.
9, a kind of manufacturing contains the method for semiconductor type differential pressure measurement apparatus that its both sides are provided with the measuring diaphragm of measuring chamber, and it comprises;
(a) come the monox of etching SOI wafer and the predetermined portions of silicon with the RIE etching method;
(b) allow epitaxially grown layer on the SOI wafer surface, form;
(c) the described epitaxial growth laminar surface of polishing is to obtain the finishing minute surface;
(d) on described epitaxial growth laminar surface, form a concave portions with the RIE etching method;
(e) by the RIE etching method or be formed for the hole of the described silicon oxide layer that etching imbeds by the etch process that uses potassium hydroxide;
(f) in the gas that contains hydrogen fluoride G﹠W steam, come the resulting structure of vapor phase etchant as sacrifice layer with described silicon oxide layer; And
(g) with anode process a bearing substrate is engaged with described SOI wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93117514A CN1052538C (en) | 1993-09-10 | 1993-09-10 | Semiconductor type differential pressure measurement apparatus and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93117514A CN1052538C (en) | 1993-09-10 | 1993-09-10 | Semiconductor type differential pressure measurement apparatus and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1100198A true CN1100198A (en) | 1995-03-15 |
| CN1052538C CN1052538C (en) | 2000-05-17 |
Family
ID=4992051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN93117514A Expired - Lifetime CN1052538C (en) | 1993-09-10 | 1993-09-10 | Semiconductor type differential pressure measurement apparatus and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1052538C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106102979A (en) * | 2014-02-28 | 2016-11-09 | 恩德莱斯和豪瑟尔两合公司 | There is the combination unit of at least two parts and for the method producing this combination unit |
| CN106556484A (en) * | 2015-09-29 | 2017-04-05 | 罗斯蒙特公司 | The silicon chip pressure sensor of the output of the pressure signal with extension of over-pressure can be born |
| CN112985654A (en) * | 2021-02-22 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor and method for assembling the same |
| CN114746734A (en) * | 2019-12-03 | 2022-07-12 | 恩德莱斯和豪瑟尔欧洲两合公司 | Method for producing a differential pressure sensor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011220927A (en) | 2010-04-13 | 2011-11-04 | Yamatake Corp | Pressure sensor |
| JP5658477B2 (en) * | 2010-04-13 | 2015-01-28 | アズビル株式会社 | Pressure sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5207103A (en) * | 1987-06-01 | 1993-05-04 | Wise Kensall D | Ultraminiature single-crystal sensor with movable member |
| US4790192A (en) * | 1987-09-24 | 1988-12-13 | Rosemount Inc. | Silicon side by side coplanar pressure sensors |
| DE456029T1 (en) * | 1990-05-10 | 1992-06-11 | Yokogawa Electric Corp., Musashino, Tokio/Tokyo | PRESSURE SENSOR WITH SWINGING ELEMENT. |
-
1993
- 1993-09-10 CN CN93117514A patent/CN1052538C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106102979A (en) * | 2014-02-28 | 2016-11-09 | 恩德莱斯和豪瑟尔两合公司 | There is the combination unit of at least two parts and for the method producing this combination unit |
| US10551262B2 (en) | 2014-02-28 | 2020-02-04 | Endress+Hauser Se+Co.Kg | Component arrangement with at least two components and method for producing a component arrangement |
| CN106556484A (en) * | 2015-09-29 | 2017-04-05 | 罗斯蒙特公司 | The silicon chip pressure sensor of the output of the pressure signal with extension of over-pressure can be born |
| CN106556484B (en) * | 2015-09-29 | 2020-06-02 | 罗斯蒙特公司 | Silicon chip pressure sensor capable of bearing high overpressure and having expanded pressure signal output |
| CN114746734A (en) * | 2019-12-03 | 2022-07-12 | 恩德莱斯和豪瑟尔欧洲两合公司 | Method for producing a differential pressure sensor |
| US12061127B2 (en) | 2019-12-03 | 2024-08-13 | Endress+Hauser SE+Co. KG | Method for producing a differential pressure sensor |
| CN112985654A (en) * | 2021-02-22 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor and method for assembling the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1052538C (en) | 2000-05-17 |
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