CN110018189A - A kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism - Google Patents
A kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism Download PDFInfo
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- CN110018189A CN110018189A CN201910215090.9A CN201910215090A CN110018189A CN 110018189 A CN110018189 A CN 110018189A CN 201910215090 A CN201910215090 A CN 201910215090A CN 110018189 A CN110018189 A CN 110018189A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
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Abstract
The invention discloses a kind of in situ TEM methods for studying copper alloy with high strength and high conductivity strengthening mechanism, the present invention effectively combines transmission electron microscope and original position stretching experiment, using the strengthening mechanism of the means research copper alloy with high strength and high conductivity of transmission electron microscope original position stretching, its strengthening mechanism is further probed into；Experimentation is intuitively presented, provides real-time positive evidence for deformation mechanism, structure and the performance etc. of research material；The present invention can also directly observe and record in real time precipitated phase and dislocation interactions process in alloy.The clamping device that the present invention uses can make its center device to hole with flexible modulation sample position, be arranged by sliding rail replace institute in original fixture frequently with method of clamping, sample of the present invention dress holds position and stablizes, and under external force convenient for adjusting.
Description
Technical field
The present invention relates to a kind of in situ TEM methods for studying copper alloy with high strength and high conductivity strengthening mechanism.
Background technique
Copper alloy with high strength and high conductivity has excellent comprehensive performance, in various fields extensive application.Cu-Cr-Zr system closes
Gold is typical copper alloy with high strength and high conductivity, and intensity can achieve 600MPa or more, and conductivity can achieve 80%IACS or more,
It is widely used in high-speed rail contact line, heat-exchange device, circuit lead frame material etc..Cu-Cr-Zr system alloy belongs to analysis
Reinforced alloys out in alloy substrate uniformly and the precipitated phase of Dispersed precipitate is the key factor of alloy strengthening, and are precipitated among these
The inhibition of opposite dislocation motion contributes the promotion of alloy property very big.Therefore in research alloy between precipitated phase and dislocation
Reciprocation help further to disclose its mechanism of action, illustrate its strengthening mechanism.
Electrolysis is double spray be thinned the thinned sample preparation technique of coupled ion prepare metal transmission electron microscope observing sample frequently with
Means.Be thinned or directly double sprays to having been subjected to grinding and polishing and reach certain thickness sample by the double sprays of electrolysis first
Hole.And by being electrolysed double direct drillings of spray, aperture obtained has that thin area is too small or sometimes the disadvantages of there are impurity thin area,
Therefore the aperture to made from as ion milling is needed to carry out further reaming and purification.
But when be electrolysed double sprays for strip sample, it is easy to appear and is thinned or the region of drilling is for sample
Be for product it is asymmetrical, this allows for not making during subsequent ion milling due to the fixed setting of sample stage
Regional center device to hole to be processed, thus will affect the effect of ion milling.
Summary of the invention
To solve the above problems, the present invention provides a kind of originals for studying copper alloy with high strength and high conductivity strengthening mechanism
Position transmission electron microscope method.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism, comprising the following steps:
(1) sample of certain size specification is made, and sample mill is thrown into suitable thickness before the double sprays of electrolysis are thinned
Degree；
(2) instrument is thinned with the double sprays of electrolysis and thinned or drilling is carried out to sample；
(3) sample obtained with Ion Beam Thinner to step (2) further drilling or purging, obtains original position stretching examination
Sample；
(4) the original position stretching sample that step (3) obtains is sticked on substrate or is enable original position stretching sample and original position
Tension test bar size matches；
(5) preliminary observation is carried out to sample in transmission electron microscope, and so that sample is in stress by preloading；
(6) by adjusting the step-length stretched and speed control drawing process, finding sample, rate is initially formed during stretching
The region of crackle；
(7) it stretches in situ during carrying out, by verting sample to obtain the best contrast of display dislocation and precipitated phase
Condition；
(8) visual field is moved to and records picture center, stop load or turn load step-length and rate down, pass through videograph
The real-time process of precipitated phase and dislocation interactions.
Further, in step (1), the dimensions of the sample of production are as follows: length≤5mm, wide≤2.5mm, thick≤
1.5mm。
Further, in step (1), sample mill is thrown into thickness≤40 μm before the double sprays of electrolysis are thinned.
Further, sample obtained in step (2) need to meet the following conditions, just carry out the operation of next step, condition
Are as follows: sample has the aperture for capableing of faint light transmission under the conditions of light or has more bright weakened region.
Further, step (7) is specifically: is stretched during carrying out in situ, specimen holder x-axis is verted ± 30 ° of ranges
It is interior, obtain the best contrast condition of display dislocation and precipitated phase.
Further, step (3) prepare clamping device used in original position stretching sample include charging floor, sample stage, above
Plate, charging floor are equipped with the first sliding rail, and sample stage is equipped with the second sliding rail, and charging floor is connect with sample stage by the first sliding rail,
Sample stage can be slided relative to charging floor, and top panel is connect with sample stage by the second sliding rail, and top panel can be relative to sample
Sample platform sliding.
Further, step (3) prepares the specific steps of original position stretching sample are as follows:
S1. the sample that step (2) obtains is mounted on sample stage, before sample is installed, is first removed top panel, it will be through
The sample levels for crossing step (2) are placed on sample stage, are then slid into the second sliding rail of top panel alignment sample stage two sides, are buckled
It presses and fixes sample；
S2. slide sample stage or/and adjust sample the placement location of sample stage make sample weakened region or
Aperture obtained can be aligned with the center of circular hole on T-device platform；
S3. after completing step S2, further drilling or purging is carried out to sample, finally obtain original position stretching sample.
The beneficial effects of the present invention are:
(1) present invention effectively combines transmission electron microscope and original position stretching experiment, using the means of transmission electron microscope original position stretching
The strengthening mechanism for studying copper alloy with high strength and high conductivity, further probes into its strengthening mechanism；Experimentation is intuitively presented, to study material
Deformation mechanism, structure and performance of material etc. provide real-time positive evidence；The present invention can also be observed directly and be recorded in real time
Precipitated phase and dislocation interactions process in alloy.
(2) clamping device that the present invention uses can make its center device to hole with flexible modulation sample position, be arranged by sliding rail
Instead of in original fixture frequently with method of clamping, sample dress holds position stablize, under external force convenient for adjust.
(3) there is the clamping device that the present invention uses sample dress to take simplicity, center device to hole easy to operate and realize and applicable
In asymmetric electrolysis double the advantages that spraying sample, the clamping device that the present invention uses is able to ascend the effect that sample ions are thinned.
(4) for meeting the width for the clamping device requirement that the present invention uses and the sample of thickness, clamping device is to sample
Limitation in length can relax；For asymmetric sample, the center device to hole of sample can be by sliding sample stage first
The placement location of position or/and adjustment sample on sample stage on sliding rail is realized.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that sample is mounted on after sample stage by the present invention, wherein S indicates sample.
Fig. 2 is the structural schematic diagram of top panel in the present invention.
Fig. 3 is the right view of Fig. 1, wherein S indicates sample.
Fig. 4 is the images of transmissive electron microscope of the aperture after often asymmetric sample ions are thinned with fixture using ion milling.
Fig. 5 is the images of transmissive electron microscope of the aperture after asymmetric sample ions are thinned using clamping device of the invention.
Fig. 6 is the schematic diagram for obtaining the sample of aperture by being electrolysed double sprays, wherein (a) aperture position is both in Sample Width
The center in direction, also in the center in sample length direction；(b) aperture position is neither at the center in sample length direction
Position, also not in the center in Sample Width direction；(c) aperture position exists in the center in Sample Width direction, but not
The center in sample length direction；(d) aperture position is in the center in sample length direction, but not in Sample Width direction
Center.
Fig. 7 is the interactive process in drawing process between the dislocation observed and precipitated phase.
Specific embodiment
Below in conjunction with attached drawing, further details of the technical solution of the present invention, it is noted that specific implementation
Mode is detailed description of the invention, is not construed as limitation of the invention.
The present invention provides a kind of device for preparing copper alloy with high strength and high conductivity original position stretching sample, as shown in Figure 1-3, include dress
Set platform 3, sample stage 4, top panel 5, charging floor 3 is equipped with the first sliding rail 1, and sample stage 4 is equipped with the second sliding rail 2, charging floor 3 with
Sample stage 4 is connected by the first sliding rail 1, and sample stage 4 can slide relative to charging floor 3 along the first sliding rail 1, top panel 5 and
Sample stage 4 is connected by the second sliding rail 2, and top panel 5 can be slided relative to sample stage 4 along the second sliding rail 2.Charging floor 3 can
For installing, placing sample stage 4；Sample can be placed on sample stage 4；Top panel 5 can be used for fixed sample.Pass through sliding
Sample stage 4, which is allowed to move or adjust on the first sliding rail position of the sample on sample stage 4, can make sample realize center pair
Hole.
In some preferred modes, the first sliding rail 1 is arranged in parallel with the second sliding rail 2.
In some preferred modes, the first sliding rail 1 includes two tracks；Two tracks are in opposite position, and
It is parallel to each other；Second sliding rail 2 respectively includes two tracks, and two tracks are in opposite position, and are parallel to each other.
In some preferred modes, as shown in Figure 1, charging floor 3 is T-shaped.
In some preferred modes, 3 upper surface of T-device platform is equipped with circular hole 6, as shown in Figure 1, circular hole 6 is located at device
The center of 3 upper surface of platform is conducive to adjust sample in this way, realizes center device to hole.
In some preferred modes, as shown in Figure 1, the two side walls 13 of T-device platform 3 are equipped with the first sliding rail 1, apply
Add external force, sample stage 4 can move in the first sliding rail 1.
In some preferred modes, as shown in Figure 1,3, sample stage 4 includes top half 7 and lower half portion 8, the upper half
7 are divided to be fixedly connected with lower half portion 8, two lateral surfaces of 4 top half 7 of sample stage are arranged in the second sliding rail 2.
In some preferred modes, as shown in figure 3, the lower half portion 8 of sample stage 4 is in soil font, the lower half of sample stage 4
Part 8 is slidably connected with the first sliding rail 1.Sample stage 4 can be stably connected with charging floor 3, when external force is in sample stage 4,
Sample stage 4 can be slided along the first sliding rail 1, and then adjust the position of aperture or weakened region on sample.
In some preferred modes, as shown in Fig. 2, top panel 5 is hollow shape, in this way convenient for fixed sample, simultaneously
It is also convenient for cooperating with sample stage 4, slides into the second sliding rail 2 on sample stage 4 convenient for top panel 5.
In some preferred modes, as shown in Fig. 2, the upper surface of top panel 5 is equipped with the first opening 9, it can see in this way
Sample is observed, center device to hole is advantageously implemented；During the ion milling of sample, under the conditions of guaranteeing that sample places firm to the greatest extent
It is likely to reduced contact area of the fixture (fixture is top panel 5 herein) with sample, therefore the first opening 9 of 5 upper surface of top panel
Size, length close to T-device platform circular hole 6 diameter, width be less than Sample Width.
As shown in Fig. 2, the left and right sides of top panel 5 are equipped with the second opening 10, are conducive to top panel 5 and are mounted on sample stage
On；The front and rear sides of top panel 5 are also equipped with third opening 11, can reduce the contact area of top panel 5 Yu sample in this way, and
And the position convenient for observation with adjusting sample on sample stage 4, it is advantageously implemented center device to hole.The lower surface of top panel 5 is also set
There is the 4th opening.
In some preferred modes, as shown in Fig. 2, the both ends of top panel 5 are equipped with the buckle cooperated with the second sliding rail 2
12.Top panel 5 can be mounted on sample stage 4 in such a way that sliding is withheld, and buckle 12 and the second sliding rail 2 cooperate, Neng Gougu
Random sample product, and under external force, buckle 12 can slide in the second sliding rail 2.
Agreeing with for top panel 5 and sample stage 4 is smaller to sample size limitation in the longitudinal direction and position limitation.Above
For plate 5 in the longitudinal direction without the length of setting borders sample, top panel 5 is equipped with clamping boundary in the direction of the width；?
In width direction, top panel 5 uses Widening Design, and top panel 5 can be in the certain size range in 2 width direction of the second sliding rail
Interior sliding, and then placement location of the adjustable sample on sample stage, therefore, the clamping device that the present invention uses is for sample
Limitation in the direction of the width is also reduced by.
In order to guarantee, sample is at firm state, the thickness between top panel 5 and sample stage 4 under no external force
Degree setting has certain limit.
Sample stage 4 the first sliding rail 1 length of the sliding due to being limited to T-device platform 3, slidable distance
Be it is fixed, slidable distance is effective sliding distance.Sample stage 4 can only be in effective sliding distance on the first sliding rail 1
Interior sliding.
Top panel 5 and sample stage 4 can play the role of adjusting sample positional relationship in the longitudinal direction, therefore, so that
Sample has biggish dimensional threshold and position limit in the longitudinal direction.
Center device to hole: enable sample weakened region or the center of aperture obtained on T-device platform 3
Circular hole 6 center alignment, it may also be said to, make the circular hole 6 on charging floor 3 and the aperture position on sample or weakened region
It can substantially remain on same central axis.
The realization of center device to hole in the position of the first sliding rail 1 and can adjust sample in sample by adjusting sample stage 4
Riding position on platform 4 carries out cooperation adjustment.
It for aperture position different on sample, is adjusted accordingly, in Fig. 6, (a) aperture position was both wide in sample
The center in direction is spent, and in the center in sample length direction, therefore, by 6 centering of circular hole on aperture and charging floor 3
Afterwards, sample is placed, ion milling operation can be carried out；(b) aperture position is neither in the center in sample length direction, also not
In the center in Sample Width direction, can by first adjusting the position of sample stage 4 to can be realized on length direction pair
In, then by adjusting pair in placement location realization width direction of the sample in placement location, that is, top panel 5 on sample stage 4
In；(c) aperture position is in the center in Sample Width direction, but not in the center in sample length direction, it is only necessary to logical
The centering of length direction can be realized in the position for overregulating sample stage 4；(d) centre bit of the aperture position in sample length direction
It sets, but not in the center in Sample Width direction, only need to adjust placement location of the sample on sample stage 4 and adjust sample and exist
The centering in width direction can be realized in placement location in top panel 5.
The present invention also provides a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism, this method
Original position stretching sample is prepared using apparatus described above, and then studies copper alloy with high strength and high conductivity strengthening mechanism；The following steps are included:
In the present embodiment, copper alloy is Cu-Cr-Zr alloy；
(1) sample of machining production certain size specification, in the present embodiment, the dimensions of the sample of production are as follows:
Length≤5mm, wide≤2.5mm, thickness≤1.5mm, and sample mill is thrown into suitable thickness, this reality before the double sprays of electrolysis are thinned
It applies in example, with a thickness of≤40 μm；
(2) instrument is thinned with the double sprays of electrolysis and thinned or drilling is carried out to sample, following item need to be met by being electrolysed double samples sprayed
Part, just carry out next step operation, condition are as follows: sample have the aperture for capableing of faint light transmission under the conditions of light or have compared with
For bright weakened region；
(3) the further drilling of sample obtained with Ion Beam Thinner to step (2) or purging, will there is aperture originally
Sample, purging has reaming phenomenon to sample；To have originally the sample of more bright weakened region, aperture has been prepared
Sample to get having arrived original position stretching sample；
(4) the original position stretching sample after step (3) intermediate ion is thinned is sticked on substrate or otherwise
It can match with in-situ tensile test bar size；
(5) preliminary observation is carried out to sample in transmission electron microscope, and so that sample is in stress by preloading；
(6) it by adjusting the step-length stretched and speed control drawing process, is frequently moved around aperture under the visual field,
Finding sample, rate is initially formed the region of crackle during stretching, and the areas adjacent for often having crackle to be formed is that observation is suitble to be precipitated
The region of phase and dislocation interactive process；
(7) in situ stretch carry out during, can be obtained by verting sample display dislocation and precipitated phase it is best
Contrast condition, in the present embodiment, specimen holder x-axis is verted within the scope of ± 30 °, the best lining of available display dislocation and precipitated phase
Degree condition, best contrast condition is: dislocation and precipitated phase being enabled to have the contrast condition of obvious form or at least make position
Wrong form is more obvious, the more relatively weak contrast condition of phase contrast is precipitated；
(8) visual field is moved to and records picture center, stop load or turn load step-length and rate down can generally to adjust
Section is 0.1~5 micron/step, passes through the real-time process of videograph precipitated phase and dislocation interactions.
Fig. 7 is the interactive process in drawing process between the dislocation observed and precipitated phase.Position in the lower left corner in Fig. 7 (a)
Wrong D1 is precipitated phase particle P pinning.By 39s, it can be seen that dislocation D1, which has, significantly rides out behavior figure 7 (b).At 1 point and 22 seconds,
D1 partial dislocation is detached from pinning, and first slips, and D2 partial dislocation is still pinned at this time.Then, D2 partial dislocation is also earned after 1s
De- pinning, and move forward.Interaction process shown in Fig. 7 shows that dislocation will receive releasing characteristics during the motion
Inhibition and the phenomenon that show segment movement during pinned.
As a preferred mode, the specific of original position stretching sample is prepared using Ion Beam Thinner processing in step (3)
Operation, comprising the following steps:
S1. step (2) is obtained stretching sample to be mounted on sample stage 4, before sample is installed, is first removed top panel 5,
It will be placed on sample stage 4 by the stretching sample levels of step (2) processing；Top panel 5 is directed at the second of 4 two sides of sample stage
Sliding rail 2 slides into, withholds and fix sample；It when if necessary to slide top panel 5 again, needs to apply external force, if do not applied outer
Power, top panel 5 are stablized motionless；
S2. apply external force, slide sample stage 4, enable the weakened region or aperture and T-type obtained of sample
6 center of circular hole alignment on charging floor 3, realizes center device to hole, it may be assumed that make the circular hole 6 on charging floor 3 and the aperture position on sample
Or weakened region can substantially remain on same central axis；Either at least guarantee the aperture on sample or has been thinned
Region is aligned in length direction with 6 center of circular hole of T-device platform 3；
If slided in effective sliding distance only by adusting sample stage 4, center device to hole still cannot achieve, then can lead to
Sample is overregulated further to adjust in the placement location of sample stage 4；
Sample the relative position of sample stage 4 can before top panel 5 is installed by mobile example in the direction of the width
Placement location, so that aperture is aligned this side up with 6 center of circular hole of T-device platform 3；
S3. after completing step S2, ion milling can be carried out to sample, finally obtains original position stretching sample.
Fig. 4 is the images of transmissive electron microscope of the aperture after often asymmetric sample is thinned with fixture using ion milling, non-right
Claim sample to refer to: aperture or weakened region be not in the center in sample length direction or/and not in width direction
Heart position；As shown in Figure 4, thin area's matter of the aperture surrounding after often asymmetric sample ions being thinned with fixture using ion milling
It measures very poor, only occurs a small amount of translucent area below aperture；Fig. 5 be using clamping device of the invention to asymmetric sample from
The images of transmissive electron microscope of aperture after son is thinned；As shown in Figure 5, asymmetric sample ions are subtracted using clamping device of the invention
Aperture week after thin, which makes a circle, the translucent area of larger area, and aperture has good thin area after illustrating ion milling,
Key precondition condition is provided for subsequent in-situ tensile test, and it is asymmetric to also illustrate that clamping device of the invention is suitable for
Sample carries out ion milling, and the clamping device that the present invention uses is able to ascend the effect that sample ions are thinned.
Claims (7)
1. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism, which is characterized in that including following step
It is rapid:
(1) sample of certain size specification is made, and sample mill is thrown into suitable thickness before the double sprays of electrolysis are thinned；
(2) instrument is thinned with the double sprays of electrolysis and thinned or drilling is carried out to sample；
(3) sample obtained with Ion Beam Thinner to step (2) further drilling or purging, obtains original position stretching sample；
(4) the original position stretching sample that step (3) obtains is sticked on substrate or is enable original position stretching sample and original position stretching
Check bar size matches；
(5) preliminary observation is carried out to sample in transmission electron microscope, and so that sample is in stress by preloading；
(6) by adjusting the step-length stretched and speed control drawing process, finding sample, rate is initially formed crackle during stretching
Region；
(7) it stretches in situ during carrying out, by verting sample to obtain the best contrast condition of display dislocation and precipitated phase；
(8) visual field is moved to and records picture center, stop load or turn load step-length and rate down, be precipitated by videograph
The real-time process of phase and dislocation interactions.
2. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism according to claim 1,
It is characterized in that, in step (1), the dimensions of the sample of production are as follows: length≤5mm, wide≤2.5mm, thickness≤1.5mm.
3. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism according to claim 1,
It is characterized in that, in step (1), sample mill is thrown into thickness≤40 μm before the double sprays of electrolysis are thinned.
4. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism according to claim 1,
It is characterized in that, sample obtained in step (2) need to meet the following conditions, just carry out the operation of next step, condition are as follows: sample tool
It is standby to be capable of the aperture of faint light transmission under the conditions of light or have more bright weakened region.
5. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism according to claim 1,
It is characterized in that, step (7) is specifically: is stretched during carrying out in situ, specimen holder x-axis is verted within the scope of ± 30 °, is shown
Show the best contrast condition of dislocation and precipitated phase.
6. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism according to claim 1,
It is characterized in that, it includes charging floor, sample stage, top panel, charging floor that step (3), which prepares clamping device used in original position stretching sample,
It is equipped with the first sliding rail, sample stage is equipped with the second sliding rail, and charging floor connect with sample stage by the first sliding rail, and sample stage can be with
It is slided relative to charging floor, top panel is connect with sample stage by the second sliding rail, and top panel can be relative to sample stand sliding.
7. a kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism according to claim 6,
It is characterized in that, step (3) prepares the specific steps of original position stretching sample are as follows:
S1. the sample that step (2) obtains is mounted on sample stage, before sample is installed, is first removed top panel, it will be by step
Suddenly the sample levels of (2) are placed on sample stage, are then slid into the second sliding rail of top panel alignment sample stage two sides, are withheld simultaneously
Fixed sample；
S2. it slides sample stage or/and adjusts sample and make the weakened region of sample in the placement location of sample stage or made
The aperture obtained can be aligned with the center of circular hole on T-device platform；
S3. after completing step S2, further drilling or purging is carried out to sample, finally obtain original position stretching sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910215090.9A CN110018189A (en) | 2019-03-21 | 2019-03-21 | A kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910215090.9A CN110018189A (en) | 2019-03-21 | 2019-03-21 | A kind of in situ TEM method for studying copper alloy with high strength and high conductivity strengthening mechanism |
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| CN110018189A true CN110018189A (en) | 2019-07-16 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795056A (en) * | 1980-12-05 | 1982-06-12 | Hitachi Ltd | Appearance inspecting process |
| CN101876605A (en) * | 2009-04-29 | 2010-11-03 | 中芯国际集成电路制造(上海)有限公司 | Precision ion polishing system and sample clamp thereof |
| CN103868770A (en) * | 2014-02-24 | 2014-06-18 | 燕山大学 | Preparation method of granulate Fe-C compound transmission electron microscope in-situ tensile sample |
| CN206161402U (en) * | 2016-11-14 | 2017-05-10 | 哈尔滨理工大学 | Normal position tensile sample ion attenuate sample platform |
-
2019
- 2019-03-21 CN CN201910215090.9A patent/CN110018189A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795056A (en) * | 1980-12-05 | 1982-06-12 | Hitachi Ltd | Appearance inspecting process |
| CN101876605A (en) * | 2009-04-29 | 2010-11-03 | 中芯国际集成电路制造(上海)有限公司 | Precision ion polishing system and sample clamp thereof |
| CN103868770A (en) * | 2014-02-24 | 2014-06-18 | 燕山大学 | Preparation method of granulate Fe-C compound transmission electron microscope in-situ tensile sample |
| CN206161402U (en) * | 2016-11-14 | 2017-05-10 | 哈尔滨理工大学 | Normal position tensile sample ion attenuate sample platform |
Non-Patent Citations (1)
| Title |
|---|
| 陈凯旋: "纳米颗粒-细微晶协同强化铜合金的组织与性能研究", 《中国博士学位论文全文数据库工程科技Ⅰ辑》 * |
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Application publication date: 20190716 |