CN110007555A - Pattern plotter method, photomask and its manufacturing method, the manufacturing method of display device - Google Patents
Pattern plotter method, photomask and its manufacturing method, the manufacturing method of display device Download PDFInfo
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- CN110007555A CN110007555A CN201811530914.3A CN201811530914A CN110007555A CN 110007555 A CN110007555 A CN 110007555A CN 201811530914 A CN201811530914 A CN 201811530914A CN 110007555 A CN110007555 A CN 110007555A
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- Prior art keywords
- pattern
- photomask
- hole
- correcting
- pattern data
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
Abstract
The present invention relates to the manufacturing methods of pattern plotter method, the manufacturing method of photomask, photomask and display device.The variation for reducing pattern CD, obtains stable yield rate.Pattern plotter method includes: correcting process, design pattern data is corrected according to the corrected value found out in advance, to obtain correcting pattern data, which is found out in the mode for keeping the hole/dot pattern CD obtained on transfer printing body and being exposed to photomask equal with target value；And describes process and described using correcting pattern data using drawing apparatus.Drawing apparatus is driven in the face parallel with photomask base plate face in X-direction and from the different driving method of precision is controlled by CD in the vertical Y-direction of X-direction.In correcting process, by design pattern data device to hole/dot pattern CD corrected obtain correcting pattern data as follows, in the correction, the CD in the x direction and the y direction is made to control the CD change on the higher direction of precision.
Description
Technical field
The present invention relates to the photomasks for manufacturing electronic equipment, in particular to for manufacturing with liquid crystal display panel
(LCD), organic el display (OLED) etc. is the manufacturing method of the useful photomask of photomask of the display device of representative, and
The pattern plotter method used in this manufacturing method.
Background technique
It describes in patent document 1 (after, referred to as document 1) when manufacturing photomask, correction is generated in development phase
The pattern line-width method that changes and be exposed.The exposure method includes such as the next stage: by having the survey of defined line width
Attempt case and forms the stage for measuring pattern on photomask base plate；By the region segmentation on photomask base plate at grid, for
Each grid measures the line width of the measurement pattern, and determine that institute's setting-out line is wide and the difference of the line width of the test pattern i.e.
The stage of pattern line-width variation delta CD；Make the stage of chart, distance of the graph representation from the benchmark grid arbitrarily determined
For distribution of the pattern line-width variation delta CD (r) relative to the distance r of the measurement of the grid of r；According to the chart
To predict that the distance from the benchmark grid on photomask base plate is the pattern line-width variation delta CD in the arbitrary place of x
(x) stage；For each place on the photomask base plate, in order to make the pattern line-width variation delta CD of the prediction
(x) pattern line-width in the region being negative expands, the pattern in the region for making the pattern line-width variation delta CD (x) of the prediction be positive
Line width reduce and to the pattern line-width data corrected stage；And it will be for clicking through on the photomask base plate eachly
Pattern line-width data application obtained from row correction is in the stage of exposure equipment.
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2003-107665 bulletin
Summary of the invention
According to document 1, when manufacturing the photomask of semiconductor device manufacture, for the pattern generated in development phase
Line width variation compensates to improve the uniformity of pattern line-width.
But the research of people according to the present invention, when manufacturing photomask in addition to the line width of the pattern generated in development phase
It, will be because there is also making that pattern line-width (i.e. CD:Critical Dimension: characteristic size) is changed other than variation.Example
Such as, in the manufacturing process of photomask, there is also the CD errors as caused by drawing apparatus, or are being turned using photomask
Print in the various stages such as the development of pattern on body after stages of exposing patterns, exposure, all exist cause CD to change will be because.Cause
This only passes through the method for document 1, and the exposure by photomask is to be difficult to obtain excellent device (display device etc.).
Therefore, the present invention is completed using following item as project: manufacture as final products electronic equipment (such as show
Showing device) when, the variation of pattern CD is reduced, stable yield rate and production efficiency is obtained.
(the 1st mode)
1st mode of the invention be a kind of pattern plotter method, be used for the design pattern data according to regulation and in light
Described on mask substrate, there is the photomask including hole/dot pattern transfer pattern to be formed,
The pattern plotter method is characterised by comprising:
Correcting process, wherein the design pattern data is corrected according to the corrected value found out in advance, to be corrected
Pattern data the, so that hole/dot pattern CD and target that are obtained on transfer printing body and being exposed to the photomask
It is worth equal；And
Describe process, wherein the correcting pattern data are applied, are described using drawing apparatus,
The drawing apparatus is in the face parallel with the photomask base plate face, in X-direction and vertical with the X-direction
The different driving method of precision is controlled by CD in Y-direction to be driven,
In the correcting process, by being corrected as follows in design pattern data to the CD of the hole/dot pattern,
Correcting pattern data are obtained, in the correction, so that the CD in X-direction and Y-direction is controlled the CD on precision higher direction and becomes
More.
(the 2nd mode)
According to pattern plotter method described in above-mentioned 1st mode, the 2nd mode of the invention is characterized in that,
In the correcting process, hole/dot pattern target area of the transfer pattern is found out, in the target area
Under, the hole/dot pattern CD obtained on transfer printing body is equal with target value,
To institute in the design pattern data and hole/dot pattern target area according to the transfer pattern
It states hole/dot pattern CD to be corrected as follows, to obtain correcting pattern data, in the correction, make in X-direction and Y-direction
CD controls the CD change on the higher direction of precision.
(the 3rd mode)
3rd mode of the invention is that a kind of pattern plotter method is characterized in that, is used for the layout according to regulation
Data and described on photomask base plate, come formed have including hole/dot pattern transfer pattern photomask,
The pattern plotter method is characterised by comprising:
Correcting process, wherein the design pattern data is corrected according to the corrected value found out in advance, to be corrected
Pattern data the, so that hole/dot pattern area and mesh that are obtained on transfer printing body and being exposed to the photomask
Scale value is equal；And
Describe process to be described using the correcting pattern data using drawing apparatus,
The drawing apparatus is in the face parallel with the photomask base plate face, in X-direction and vertical with the X-direction
The different driving method of precision is controlled by CD in Y-direction to be driven,
In the correcting process, by being corrected as follows in design pattern data to the CD of the hole/dot pattern,
Correcting pattern data are obtained, in the correction, so that the CD in X-direction and Y-direction is controlled the CD on precision higher direction and becomes
More.
(the 4th mode)
According to pattern plotter method described in the 3rd mode, the 4th mode of the invention is characterized in that,
In the correcting process, hole/dot pattern target area on the transfer printing body is found out,
Hole/point diagram of the transfer pattern is found out according to hole/dot pattern target area on the transfer printing body
The target area of case,
To institute in the design pattern data and hole/dot pattern target area according to the transfer pattern
It states hole/dot pattern CD to be corrected as follows, to obtain correcting pattern data, in the correction, make in X-direction and Y-direction
CD controls the CD change on the higher direction of precision.
(the 5th mode)
According to pattern plotter method described in formula either in above-mentioned 1st to the 4th mode, the 5th mode of the invention
It is characterized in that,
The drawing apparatus is the laser description device described using laser beam.
(the 6th mode)
According to pattern plotter method described in formula either in above-mentioned 1st to the 4th mode, the 6th mode of the invention
It is characterized in that,
The transfer in pattern hole/dot pattern X-CD and Y-CD be less than the exposure that is exposed to the photomask
The resolution limit size of device.
(the 7th mode)
According to pattern plotter method described in formula either in above-mentioned 1st to the 4th mode, the 7th mode of the invention
It is characterized in that,
Hole/dot pattern X-CD and Y-CD in the transfer pattern is less than 3 μm.
(the 8th mode)
According to pattern plotter method described in formula either in above-mentioned 1st to the 4th mode, the 8th mode of the invention
It is characterized in that,
In the drawing apparatus, laser beam is after having carried out feed motion in X-direction with fixed feeding width,
In in Y-direction carry out fixed width irradiation movement, the drawing apparatus by alternately and repeatedly carry out these act and in light
Described on mask substrate.
(the 9th mode)
According to pattern plotter method described in formula either in above-mentioned 1st to the 4th mode, the 9th mode of the invention
It is characterized in that,
In the correcting process, the CD of the design pattern data is replaced with CD corrected value and obtains correcting pattern number
According to the CD corrected value is so that hole/dot pattern area included in the design pattern data and the photomask base plate
On hole/dot pattern area equation mode and find out.
(the 10th mode)
According to pattern plotter method described in formula either in above-mentioned 1st to the 4th mode, the 10th mode of the invention
It is characterized in that,
The process for obtaining preliminary mask, the preliminary mask are to be carried out before the correcting process using the drawing apparatus
Obtained from pattern plotter；And
Corrected value grasps process, and the corrected value is grasped by the X-CD and Y-CD of the preliminary mask.
(the 11st mode)
11st mode of the invention is a kind of manufacturing method of photomask comprising any in above-mentioned 1st to the 4th mode
Pattern plotter method described in mode.
(the 12nd mode)
12nd mode of the invention is a kind of photomask, has the transfer pattern including multiple hole/dot patterns,
The photomask is characterized in that,
The X-CD and Y-CD of multiple hole/dot patterns in the transfer pattern less than 3 μm,
Multiple hole/dot patterns in the transfer pattern include hole/dot pattern group, the hole/dot pattern group hole/point diagram
The quadrangle form that case has X-CD different from each other and area is equal to each other.
(the 13rd mode)
13rd mode of the invention is a kind of manufacturing method of display device characterized by comprising
Prepare the process of photomask described in above-mentioned 12nd mode；And
Using optical system numerical aperture be 0.08~0.20 exposure device and the transfer is transferred to pattern
Process on transfer printing body.
(the 14th mode)
14th mode of the invention is a kind of manufacturing method of display device comprising by the design drawing according to regulation
Case data and the photomask formed is exposed, the transfer of photomask is transferred on transfer printing body with pattern,
The manufacturing method of the display device is characterised by comprising:
Correcting process, wherein the design pattern data is corrected according to the corrected value found out in advance, to be corrected
Pattern data the, so that hole/dot pattern CD and target that are obtained on transfer printing body and being exposed to the photomask
It is worth equal；And
Describe process, wherein the correcting pattern data are applied, photomask base plate is described using drawing apparatus,
Development and etching are implemented to the photomask base plate and form the work with the photomask of the transfer pattern
Sequence；And
The photomask is exposed using exposure device and forms hole/dot pattern process on transfer printing body,
Hole/dot pattern X-CD and Y-CD in the transfer pattern less than 3 μm,
In the correcting process, carried out by the CD to the hole/dot pattern in the design pattern data as follows
It corrects and obtains correcting pattern data, in the correction, make in the Y-CD on the X-CD and Y-direction in X-direction, described description
CD change on the CD control higher direction of precision of device.
(the 15th mode)
According to the manufacturing method of display device described in above-mentioned 14th mode, the 15th mode of the invention includes:
The process for obtaining preliminary mask, the preliminary mask are to be carried out before the correcting process using the drawing apparatus
Obtained from description；And
Corrected value grasps process, the corrected value is grasped by the CD of the hole/dot pattern, the hole/dot pattern is
By the exposure device preliminary mask is exposed and to be formed on transfer printing body.
Invention effect
By with the application of the invention, the design pattern data used in the description of photomask can be corrected accurately, and lead to
It crosses and the photomask being corrected is exposed, Lai Tigao is obtained on transfer printing body (that is, the processed body for being used for manufacturing equipment)
Transfer picture CD precision.
Detailed description of the invention
(a) of Fig. 1 is the schematic top view figure for the binary mask for having sectional hole patterns, (b) of Fig. 1 and is (c) for the side X
To and with the vertical Y-direction of X-direction CD come measure the sectional hole patterns relative to square design size, CD on mask
Error, and carry out figure made of described point.
Fig. 2 is the figure for schematically showing the feed motion of laser beam of laser description device.
Fig. 3 is the figure for showing the situation of CD control of the pattern in Y-direction.
Fig. 4 is the figure for showing the situation of CD control of the pattern in X-direction.
Fig. 5 is the figure for being shown as the example of mask pattern of simulation object.
Fig. 6 is the aerial image being formed on transfer printing body when being exposed to exposure mask pattern shown in fig. 5, and
It is on transfer printing body obtained from virtually being cut off at the corresponding position of the dotted line shown in each mask pattern with Fig. 5
Aerial image.
Fig. 7 is change of transfer when showing the sectional hole patterns for each size and changing X-CD, Y-CD as upper X-CD
The figure of momentum.
Fig. 8 is the figure for showing the result of optical simulation.
Specific embodiment
Now, in the field of display device, it is strongly required the miniaturization, highly integrated of pixel, and require brighter
Bright and power saving, and it is desirable that improve display performance as high speed display, wide viewing angle.
For example, coming from the thin film transistor (TFT) used in above-mentioned display device (Thin Film Transistor:TFT)
It says, constitutes in multiple patterns of TFT, if the contact hole for being formed in interlayer dielectric does not have the pattern for making upper layer and lower layer
The effect reliably connected not can guarantee correct movement then.On the other hand, along with for example in order to strongly expand liquid crystal display
The aperture ratio of device and realize bright and power saving display device, it is desirable that the display devices such as the diameter (CD) of contact hole is sufficiently small
The requirement of densification, it is desirable to which the diameter of sectional hole patterns also realizes miniaturization (being, for example, less than 3 μm).For example, it is desired to which diameter is 0.8 μm
Fine sectional hole patterns more than and less than 3 μm, and be required to stably and effectively form the technology of the sectional hole patterns.
In addition, the semiconductor that high in integrated level and pattern miniaturization has been enhanced fills compared with display device significantly
In the field for setting (LSI) manufacture photomask, there are following processes: higher resolution ratio in order to obtain, in exposure device
Using the optical system of (for example, more than 0.2) high-NA NA, to promote the short wavelengthization of exposure light.As a result,
In the field, the excimer laser (the respectively single wavelength of 248nm, 193nm) of KrF, ArF have been used.For manufacturing light
In the drawing apparatus of mask, using EB (electron beam) drawing apparatus.
On the other hand, it in the field of lithography of display device manufacture, in order to improve resolution ratio, does not apply under normal circumstances
Above-mentioned gimmick.For example, the NA (numerical aperture) of optical system possessed by the exposure device used in this field is 0.08
~0.2 or so.Also, exposure light source also uses i line, h line or g line mostly, by using mainly including these i lines, h line or g
The wide wavelength light source of line, to obtain the photomask for irradiating large area (for example, being on one side the quadrangle of 300~2000mm)
Light quantity, it is stronger to pay attention to production efficiency, the tendency of cost.
In this condition, as described above, the miniaturization of pattern requires to get higher in the manufacture of display device.Here,
In the case that the technology of semiconductor device manufacture is directly applied in the manufacture of display device, there are Railway Projects.For example,
To the high-resolution exposure device conversion with high NA (numerical aperture), there are technical difficulties, and need biggish throwing
Money.Also, for the change of exposure wavelength (for example, in the manufacture of semiconductor device, for as ArF excimer laser
Short wavelength uses single wavelength), if being applied to the display device with larger area, other than production efficiency can decline,
Also need sizable investment.That is, the problem of display device manufacture photomask is, can have in the past pursuing
Pattern miniaturization while guarantee existing advantage this, efficiency.
In the exposure device of display device manufacture, the dimension limit of distinguishable pattern (for example, sectional hole patterns) is most
It is 3 μm or so.And the photomask as display device manufacture, it is sometimes desirable to close to 3 μm of sizes or small lower than the size
In hole/dot pattern of 3 μm of CD.Therefore, demand is even directed to the fine CD that exposure device not can guarantee, and also wants to turn exquisitely
The method of print.
[necessity of CD correction]
When manufacturing display device, CD (Critical Dimension, below with the meaning of pattern width is needed strongly
To use) the lesser sectional hole patterns that are formed with desired dimensionally stable, dot pattern.On the other hand, because for photomask into
Row exposure, the size of these patterns formed in transfer printing body (panel substrate etc.) can become not meeting design, occur
What is changed will be because there are following several reasons.
For example, the CD of the sectional hole patterns or dot pattern that have there are photomask is deviated from the manufacturing process of photomask
The case where design value.
Although below, being mainly illustrated in case where forming sectional hole patterns, the present invention is applicable not only to hole pattern
Case applies also for dot pattern.It is related to this, " sectional hole patterns or dot pattern " is simplified in the present specification and is expressed as " hole/point diagram
Case ".
In the manufacture of photomask, firstly, carrying out photomask according to the design of obtained equipment (display device etc.)
Design, to generate the pattern data (design pattern data) of description.Then, using the design pattern data, using retouching
Device is drawn to be described on photomask base plate.Photomask base plate is used as photomask figure either being formed on the transparent substrate
Photomask blank obtained from the optical film (photomask etc.) and resist film of case, or be also possible in order to stacking
A part of optical film carries out further composition and forms among the photomask of optical film, resist film after being patterned
Body.These photomask base plates described are transferred to developing procedure.The resist pattern that will be formed by development
The composition of optical film is carried out, as etching mask so as to obtain having the photomask of transfer pattern.In ideal situation
Under, the design of obtained photomask should be the design for faithfully reflecting design pattern data, the pattern CD on photomask
It should comply with data shown in design pattern data.
But as the miniaturization of pattern to be processed is being measured sometimes when measuring the CD of obtained photomask
To CD and CD based on design pattern data between can generate deviation.As the reason, there are following reasons: for example by retouching
The case where drawing the individual difference that there is output in multiple laser beams that the laser oscillator that device has is split to form or laser
The small variation etc. generated in the driving of head, wherein including the CD error generated with identical tendency reproducibility.
In this case, by preparation property described using defined design pattern data to make preparation and cover
Mould, and measure and be formed by the CD of transfer pattern, to grasp CD error tendency, and come in a manner of reflecting CD error tendency
The design pattern data for the photomask being actually subjected to is corrected, if considering in this way, to obtain meeting design
Photomask (situation 1: mask CD bad situation).
Also, pattern is being carried out on transfer printing body (display pannel substrate etc.) by exposure device using photomask
In the case where transfer, in obtained transfer as the error between upper generation sometimes and the CD as target.Such situation,
Even if in the case where in the transfer pattern that used photomask has without generating CD error, there is also (situation 2:
Panel CD bad situation).
The reason of as situation 2, such as have following situation: before exposure, it is formed in the resist film on transfer printing body
Film thickness produces the case where being distributed in face or during development, and face bias internal is produced in the supply of developer solution
In the case of etc., according to the difference of the position on transfer printing body, originally it should be identical CD and produces deviation.In particular, showing
In the case where substrate (female glass etc.) size of device larger (side is more than 1000mm~3000mm etc.), because resist applies
Cloth apparatus, the structure of developing apparatus, liquid stream of wet-treating etc. can not avoid the non-uniform feelings of the treatment conditions in face completely
Condition.
Also, in exposure photo-mask in used exposure device, it can also be produced because of the reason on apparatus structure sometimes
Light quantity distribution in dough.
Even if consider treatment conditions as described above, conditions of exposure face in it is uneven when, as long as using identical
Device can be inclined then for the CD error occurred in a manner of reproducibility by grasping the tendency and taking for reducing this
To strategy come reduce influence.Specifically, can deduce: make because in these faces unevenly will thus generate transfer as
CD unevenness homogenizes to be reflected in the pattern data of photomask in advance, and is corrected to balance out and produce because these are uneven
The tendency of increase, the reduction of raw CD.
[difficulty about CD correction]
Thus, for example, consideration CD error because of caused by the drawing apparatus in photomask fabrication process.Preparation is formed
Photomask carry out CD measurement can balance out the CD in advance in the case where the CD is different from the CD based on design pattern data
Error, therefore, it should the CD of design pattern data can be corrected.For example, according to the CD based on photomask measure as a result,
If the X-CD (CD of X-direction is also referred to X-CD) of the sectional hole patterns on photomask is excessive, consider in design pattern data into
Row reduces the correction of the X-CD of corresponding sectional hole patterns, or if Y-CD (CD of Y-direction is also referred to Y-CD) is too small, takes into account
Row increases the correction of the corresponding Y-CD in design pattern data.However, the research of people according to the present invention, such design
The correction of pattern data generates the case where cannot obtaining satisfied result sometimes.
[difference of the controlling of X-CD, Y-CD based on description]
In the following, sectional hole patterns to be illustrated for the photomask of pattern as transfer.The hole pattern that photomask has
Case (here, also known as mask sectional hole patterns) is for example as in the case where forming the transfer pattern of contact hole on transfer printing body
It is useful.Also, the display device of present fine is realized in the pattern, the tendency of miniaturization is significant.
On the other hand, as fine CD, such as example there are have to fill than the exposure used in the exposure of photomask
The pattern of the small size of the resolution limit size set.The example for generating the display equipment for having such fine pattern does not exist
It is a small number of.In the case where having the pattern of such CD, it also will appear difficulty in the manufacture of photomask, be difficult on the photomask
Form the pattern with the accurate size for meeting design.
In addition, defining the resolution limit size R of exposure device by formula below.
R=k × (λ/NA)
Coefficient k is constant, is herein 0.61.Also, λ is the wavelength of the light used in exposure.For example, using packet
In the case where the light (also known as wide wavelength light) of multiple wavelength such as line containing i, h line, g line, as wavelength X, multiple wavelength are used
Average value (considers the luminous intensity of included wavelength and weighted average).Alternatively, will simply represent wavelength (such as i line) work
For wavelength X.Also, NA is the numerical aperture of the mask side of the projection optical system of exposure device.
In this way, during photomask manufacture, as being difficult to the reason of forming the transfer pattern for meeting design, and such as
Lower situation in relation to: with fine patterns tendency, for drawing apparatus used in depicting pattern, CD
Precision is also inadequate.
Therefore, the present inventor verifies the CD precision that photomask has.Here, in order on transfer printing body
Form sectional hole patterns, and in the case where being intended to be formed the sectional hole patterns (punched hole pattern) of square on the photomask, to its CD controlling into
Research is gone.
Prepared to form a film out on the substrate being made of transparent material the photomask of Cr class, and is formed on its surface eurymeric light
Cause photomask blank obtained from resist film.Then, it using laser description device, is depicted on photoresist film multiple
The sectional hole patterns for the square that one side is design size W1 (μm).Here, W1 gradually becomes smaller from 5.5 μm, about 1.0 μm are changed to
Until.
After description, resist pattern is formed by development, and using the resist pattern as mask and to shading
Film carries out wet etching, to make the binary mask ((a) of Fig. 1) with sectional hole patterns on photomask base plate.
Next, determining the size for being formed by the sectional hole patterns of binary mask.That is, for X-direction and with the side X
It is measured to the CD (being referred to as X-CD and Y-CD) of vertical Y-direction, the hole pattern relative to square in binary mask
The CD error of the design size of case carries out described point and obtains (b) and (c) of Fig. 1.
It is in (b), (c) of Fig. 1, as the CD as design size becomes smaller from 5.5 μm, binary mask
The error of X-CD and Y-CD changes to negative side, then, when the CD as design size is less than 3 μm, the CD of binary mask
The absolute value of the margin of error sharply becomes larger.
On the other hand, above-mentioned movement is different in X-CD and Y-CD.The variation of the margin of error of Y-CD is depicted round and smooth
Curve, in contrast, the visible irregular bumps in the variation of the margin of error of X-CD.When compared with Y-CD, X-CD
The margin of error variation it is unstable, it is difficult to predict.
At this time used drawing apparatus be laser description device, laser beam in the X direction with fixed feeding width into
It has gone after feed motion, the irradiation movement of width is fixed in the Y direction, and alternately and repeatedly carrying out these movements
Described on photomask base plate.That is, the CD of X-direction and Y-direction is controlled for the CD precision of the pattern formed on the photomask
Property processed can generate difference because of the driving mechanism of drawing apparatus.
Fig. 2 schematically shows the feed motion of the beam of above-mentioned drawing apparatus.It is being executed repeatedly here, showing to provide
Feeding width feed the laser beam of defined beam diameter (what is be shown here is the case where single beam describes machine) in the X direction simultaneously
While the movement being scanned in the Y direction with defined width later, in the situation that entire description region is described.
In addition, both can only be realized by the movement of the head of outgoing laser beam about these movements, and can also by it is mobile with
The relative position between the carrying platform of photomask base plate is equipped with to realize above-mentioned movement.
Fig. 3, Fig. 4 show the situation of the CD control of the pattern of X, Y respectively on direction.On/off (ON/ can be passed through
OFF) power supply of laser beam controls the Y-CD (Fig. 3) of pattern.On the other hand, can by the arrangement width of laser beam (and according to
Need to adjust the power of the laser beam of end) control X-CD (Fig. 4).That is, the control method due to X-CD and Y-CD is different,
Therefore difference can also be generated in control precision.If investigated in conjunction with the result of (b) of Fig. 1, (c), it can be inferred that: at this
In drawing apparatus, compared with the control of X-CD, the control precision of Y-CD is high, again in the case where carrying out CD correction on pattern data
Existing property is good, the corrected value sought can be reflected in description, obtain scheduled effect.
Also, among the above, in laser beam after carrying out feed motion in X-direction with fixed feeding width, in Y
Laser irradiation is carried out while being scanned on direction with fixed width and is carried out by alternately and repeatedly carrying out these movements
The drawing apparatus of description is illustrated, but is not limited to which.For example, the irradiation movement of laser beam is in addition in the side Y
The region of the fixed width upwardly extended makes the movement (scanning irradiation) for irradiating unlatching/closing (ON/OFF) while scanning
Except, it is also possible to carry out the region of the fixed width movement (the single photograph disposably irradiated with adjustment power
It penetrates).Also, it is not limited to laser, as long as can be realized effect of the invention, even for other energy beams (such as LED
Deng), it can also apply the aftermentioned present invention.
In turn, among the above, single beam is illustrated, but is described making multiple (more) Shu Jinhang movements
In drawing apparatus, the CD control precision of X-direction and the CD control precision of Y-direction be not identical sometimes, and in this case certainly
It can be using the present invention.
[relationship of the CD on CD and transfer printing body on photomask]
In addition, in the expression face pattern CD formed on transfer printing body in the case where non-uniform CD error, can be used as
Lower method: the appropriate school CD is carried out in the pattern data for manufacturing photomask for each pattern for having CD error
Just, to eliminate the defect.Therefore, in the case where making X-CD, Y-CD of photomask change specified amount, in transfer printing body
What kind of the CD for the pattern how aerial image (light intensity distributions) of upper formation changes and be transferred on transfer printing body can generate and become
Change, is studied by carrying out optical simulation.
Fig. 5 shows the example of the mask pattern as simulation object.Under normal circumstances, contact is formed on transfer printing body
When the sectional hole patterns such as hole, the shape of sectional hole patterns is square.Here, making the resist eurymeric on transfer printing body, and prepare to have
The photomask of the punched hole pattern (A) of square, is formed as 10.0 μm (reference examples 1) and 2.0 μm for its diameter (length on 1 side)
(reference example 2).
(B) pattern to make X-CD increase 0.025 μm for above-mentioned two square pattern (A) (respectively refers to
Example 3,4).
(C) pattern to make Y-CD increase 0.025 μm for above-mentioned two square pattern (A) (respectively refers to
Example 5,6).
In Fig. 5, X and Y expression indicate mutually orthogonal direction in photomask face, with Fig. 1, it is illustrated in fig. 2 with
The direction of the driving method of drawing apparatus related X, Y are unrelated.
Applied simulated conditions are as follows.
The optical system of exposure device: NA=0.08, coherence factor σ=0.7
Exposure wavelength is the wide wavelength light for including g line, h line, i line, and intensity ratio is g:h:i=1:1:1.
The aerial image formed on transfer printing body when being exposed to mask pattern shown in fig. 5 is shown in FIG. 6.Separately
Outside, which is, the corresponding position of the dotted line shown in each pattern with Fig. 5 turned obtained from virtually cutting
Print the aerial image (light intensity distributions) on body.
By Fig. 6, following main points are specified.When CD is bigger ((a), (b) of Fig. 6), the variation phase of the CD on mask
It can be faithfully reflected on the aerial image on transfer printing body for.Here, the increase of the X-CD of mask is with the side X on aerial image
To CD increase and show.The increase of Y-CD on mask will not impact the CD of the X-direction of aerial image.
On the other hand, when the absolute value of hole CD, which becomes smaller, is less than the resolution limit size of exposure device ((c) of Fig. 6,
(d)) X-CD increase, is either made still to increase Y-CD on mask, in the aerial image showed, the CD's of X-direction
Increase is nearly all identical.In such a case it is possible to find, compared to X-CD, Y-CD possessed by the sectional hole patterns on mask
Size for, the aerial image on transfer printing body is more related to the area of the sectional hole patterns.That is, can be predicted for face
The identical sectional hole patterns of product, can depict almost the same aerial image, thus, it is possible to predict, as long as there is no other than photomask
It will be because the hole/dot pattern CD obtained on transfer printing body is also almost the same.
At this point, the transfer being formed on transfer printing body can generate the influence of the diffraction of the light for the degree that can not ignore as in,
Therefore the angle of the pattern of the quadrangle on mask also can become close to circle with fillet.Therefore, in the fine of this degree
In CD, having little significance for the differentiation of X-CD, Y-CD is carried out for the CD for the sectional hole patterns being transferred, which can become close to approximate circle
Diameter.In this case, sometimes by the average value of hole/dot pattern X-CD, Y-CD for being formed on transfer printing body simply
Referred to as CD.
According to Fig. 7, the phenomenon can be more clearly understood.(X-CD=Y- is square here, showing and being directed to have
CD) and a side is the photomask of 1.5~10 μm of 6 kinds of sectional hole patterns, is only made X-CD (on the left of bar chart) respectively or only made
In the case that Y-CD (on the right side of bar chart) increases by 0.025 μm of correction, the X-CD of the sectional hole patterns formed on transfer printing body changes
Amount.Here, as X-CD, Y-CD become smaller, by improving the irradiate light quantity of corresponding exposure light, thus on transfer printing body
Form the sectional hole patterns of target CD (here, with CD on photomask again it is 1.5~10 μm of each CD).
In addition, X and Y indicate mutually orthogonal direction in the face of photomask and in the face of transfer printing body in Fig. 7,
It is unrelated in Fig. 1, X related with the driving method of drawing apparatus illustrated in fig. 2, Y-direction.
As a result, in the case where CD is bigger, the correction of the X-CD on mask is reflected on the X-CD on transfer printing body.
On the other hand, as CD is micronized, correction only for the X-CD on mask and the correction only for Y-CD become make by
X-CD variation on transfer article will be because.It, can be in particular, the tendency is more significant in the case where having CD less than 3 μm
Know, when for 2 μm of CD below, either to the correction of the X-CD on the mask still correction to Y-CD, for being transferred
The X-CD of transfer picture on body plays almost the same effect.Also, here, CD variable quantity of the transfer as in can become larger and surpass
Cross the correcting value (0.025 μm) of X-CD.This indicate: receive the miniaturization with pattern, the CD difference on transfer printing body relative to
The influence of the phenomenon that expansion of CD difference on mask (increase of MEEF:Mask Error Enhancement Factor).
Through above situation it is found that in the case where the design pattern data of correction optical mask, without equably to X-CD
Correcting value is distributed with Y-CD, without similarly using the pattern of square before correction.Also, from the opinion of Fig. 1 it is found that in CD
The good direction of the controlling of precision (for above-mentioned drawing apparatus, be Y-CD direction) on corrected mode more
Favorably.The reason is that: if judged from the description precision of X-CD, the reproducibility of CD error is low, is carrying out X-CD
Timing, deposit the risk for generating new CD error after calibration.Consider the situation, X-CD is not corrected preferably, and
It is to try to the CD precision only by improving the transfer picture on transfer printing body to the correction of Y-CD.
As a result, other than the pattern of the square of no correction, further comprising as and only retouching in correcting pattern data
Draw implementing the result after CD correction on direction with high accuracy, (Y-CD is each other fixed) mutually different between X-CD
Or the pattern data of multiple quadrangles (rectangle) of (X-CD is each other fixed) mutually different between Y-CD.And
And it although carries out describing obtained photomask including that shape area different from each other is equal to each other using the correcting pattern data
Hole/dot pattern group.That is including 1 group or more of following combination: the combination is mutually different (therefore, the Y-CD of X-CD
It is different) and the quadrangle form of area equation the combination of hole/dot pattern, be also referred to as hole of the same area/dot pattern group.
According to this as a result, can determine whether out following situation.That is, implement the timing of CD in the layout to photomask,
Consider the structure of drawing apparatus, in X-CD and Y-CD, being only corrected to the CD CD for controlling a side with high accuracy is to have
Effect.In this way, can obtain having identical required area, hole/dot pattern group on the photomask, it should by being directed to
Photomask exposure is easy to get following calibration result: the calibration result, which is used to obtain to have on transfer printing body, meets design
Hole/dot pattern of CD.
It, can be by grasping the tendency of the controlling of drawing apparatus in advance here, the controlling Gao Yifang of CD to(for) CD
To determine.
In addition, the CD control in the drawing apparatus of photomask is not limited to the case where recording in Fig. 3, Fig. 4, in X-CD and Y-
The control precision of CD generates in the drawing apparatus of difference, can also carry out investigation same as described above.
The method more quantitatively judged in the direction high as CD controlling, shown in (b) and (c) of Fig. 1
In curve, in it can't see 2.5 μm or more of the design size towards the negative direction recess of the CD margin of error, CD mistake is calculated separately out
The standard deviation of residual quantity, and direction that can be high as CD controlling using the small side of standard deviation.In Fig. 1, it is clear that Y-direction (Fig. 1
(c)) standard deviation it is smaller.
Also, it is quasi- that least square can also be carried out using curve of approximation for the CD margin of error in each design size
Close, calculate separately out difference, that is, standard deviation of curve of approximation and the CD margin of error, and using the small side of standard deviation as CD controlling compared with
High direction.
Such bearing calibration is applied to by the X-CD of mask pattern or Y-CD (preferably, X-CD and Y-CD) close to exposure
It is particularly effective in the case where the fine pattern of the resolution limit size R of electro-optical device.In the projection exposure of display device manufacture
In device, general resolution limit size R is as follows.Here, 0.061 can be applied as coefficient k.Also, the value of NA can
To be set as 0.08 or more (more specifically, 0.08~0.2), thus, it is contemplated that it is used as resolution limit size by 3.0 μm or so,
Generally the size less than 3.0 μm is considered as less than resolution limit size.In the future, if the value of NA rises (for example, becoming
The case where 0.1~0.2 degree etc.), the value of resolution limit size R can also change, thus while as application pair of the invention
Hole/dot pattern CD of elephant can change, but gimmick of the invention is equally applicable.
R=k* λ/NA
For example, in the above example, the control precision of the Y-CD of drawing apparatus is higher than the control precision of X-CD, therefore excellent
Choosing only forms hole/dot pattern photomask with required area by the Y-CD of correction mask pattern.Here, required
Area refers to, in order to form the hole/dot pattern with required CD on transfer printing body, as hole/dot pattern on photomask
Required area.In addition, being more than above-mentioned R (example in the value of Y-CD when above-mentioned required area in order to obtain only corrects Y-CD
Such as 3.0 μm) in the case where, so that Y-CD is less than R, is supplemented by the correction of X-CD above-mentioned required in order to obtain
Insufficient section.
Specifically, it is preferable that be, the transfer figure that is formed in the photomask for display device manufacture and on the photomask
The X-CD and Y-CD of case be less than above-mentioned R in the case where with the application of the invention, and having hole/dot pattern in the transfer pattern
In the case where, advantageously using the present invention.As specific example, the effect in the case where X-CD and Y-CD is less than 3 μm
Significantly.Also, preferably, X-CD and Y-CD is 0.8 μm or more.More preferably, X-CD and Y-CD is 1.0~2.5 μm, into
One step is preferably 1.5 μm~2.5 μm.
Using such transfer pattern, it is 1.0~4.0 μm that CD (X-CD and Y-CD) can be obtained on transfer printing body
The transfer picture of left and right.In other words, it is being intended to when the hole/dot pattern CD obtained on transfer printing body is 1.0~4.0 μm, Ke Yiyou
The choosing application present invention.
Also, the preferred scope of the correction width (increase and decrease amount) in the case where corrected X-CD or Y-CD be ± (0.01~
0.15) μm or so.When correction width is excessive, the pattern area deposited on the photomask is related to the aerial image on transfer printing body
The unfavorable condition of accuracy decline, the benefit when correction width is too small, after being corrected with being unable to fully.If correction width is
Above range is then capable of the size of more meticulously correction mask, the pattern accuracy obtained on transfer printing body can be made closer
Desired value.The preferred range for correcting width is ± (0.01~0.10 μm).
(embodiment 1)
Fig. 8 shows the result of optical simulation.
Imagination is on transfer printing body (panel) in (c) of Fig. 8 in order to form the sectional hole patterns that X-CD, Y-CD are 2.5 μm,
The case where photomask for the sectional hole patterns for having square is exposed.Here, in the design pattern data for description, X-
CD, Y-CD are 2.5 μm.And, it is assumed that the sectional hole patterns of identical size are formed on the photomask.
But, it is assumed that because of the precision of drawing apparatus, in the sectional hole patterns of obtained photomask (being set as preliminary mask), X-
CD changes in the range of 2.4~2.6 μm.At this point, being to be exposed to the preliminary mask and formed on transfer printing body
Optical image, also, the X-CD and Y-CD of the optical image are carried out shown in (c) of situation such as Fig. 8 after described point.In addition, preparation
Mask, which has, carries out describing using drawing apparatus obtained prepared transfer pattern.In each chart of Fig. 8, horizontal axis table
Show the X-CD variation on photomask, the longitudinal axis indicates that X-CD (dotted line), Y-CD in the optical image formed on transfer printing body are (real
Line) variation.
In (c) of Fig. 8, although only having X-CD to change on preliminary mask, the light formed on transfer printing body
The X-CD and Y-CD of picture are learned all with the variation of the X-CD on preliminary mask, almost similarly between about 2.35~about 2.6 μm
It changes.
Next, being corrected to design pattern data.Specifically, calculating the square that design value of portalling is 2.5 μm
(2.5 × 2.5=6.25 μm of area2), and in the X-CD for not changing design pattern data (at X-CD=2.5 μm of design value
In the state of) under the premise of, it finds out to form above-mentioned area institute by the X-CD for the sectional hole patterns being actually formed on preliminary mask
The Y-CD needed, and correct the Y-CD of design pattern data and obtain correcting pattern data (correcting process).Then, it utilizes with this side
Correcting pattern data obtained from formula form photomask.
For example, when foring the sectional hole patterns that X-CD is 2.400 μm, Y-CD is 2.500 μm on preliminary mask, which is
6.000μm2.It is preferable, however, that obtaining that there are 6.25 μm on the photomask2Area sectional hole patterns.Therefore, do not change the preparation to cover
The X-CD (=2.50 μm) as design pattern data corresponding with the sectional hole patterns on mould, but by the Y- of design pattern data
CD is corrected to 2.604 μm.Then, described using above-mentioned drawing apparatus and (describe process).
Obtained photomask meets design pattern data, and the square (X-CD=Y-CD in addition to not being corrected
=2.5 μm) sectional hole patterns except, have according to the variation of X-CD and correct the rectangular sectional hole patterns after Y-CD.Though also,
These right sectional hole patterns are different from X-CD, Y-CD in design pattern data, but area is equal.Also, in layout number
Mutual area is also equal on the photomask for hole/dot pattern of X-CD, Y-CD having the same in.That is, here, will
Pass through the transfer CD corrected value alternative design pattern data found out and making area equation in pattern formed on the photomask
CD and obtain correcting pattern data.
Also, when the photomask is exposed and is transferred to its transfer on transfer printing body with pattern, in its optics
The sectional hole patterns ((d) of Fig. 8) for the CD (2.5 μm ± 0.05 μm) that X-CD and Y-CD are almost fixed are obtained as in.It could be aware that, if
Using this method, then the sectional hole patterns for having target size and having fixed CD can be stably formed on transfer printing body.Because
Range relative to the target CD to obtain on transfer printing body in (more preferably ± 0.05 μm) within ± 0.1 μm is to belong to
In tolerance band.
In addition, hole/dot pattern target the CD to be formed on transfer printing body not necessarily has to equal to the X- on photomask
CD,Y-CD.In the description of the present application, design pattern data indicates the data of the size on photomask.It as needed, can be with
The target CD for the pattern that correspondence will be formed on transfer printing body and increase deviation as defined in (or subtracting) to form photomask
Design pattern data, and using this as X-CD, Y-CD of above-mentioned design pattern data.
On the other hand, it is assumed that in (a), (b) of Fig. 8, X-CD, Y-CD sectional hole patterns for being 4.0 μm of square are made
The case where for design pattern data, show the case where having carried out operation same as described above.When the X-CD on photomask is with 3.9
~4.1 μm of amplitude changes, when Y-CD is the value of design value script, the X-CD of the optical image formed on transfer printing body with
And shown in (a) of Y-CD such as Fig. 8.In addition, calculating the area for the square that hole design value is 4.0 μm, and do not change design drawing
The X-CD (in the state of X-CD=4.0 μm of design value) of case data passes through the sectional hole patterns that are actually formed on preliminary mask
X-CD and find out with Y-CD needed for above-mentioned area equation, and correct the Y-CD of design pattern data.Also, using by this method
Obtained from correcting pattern data formed photomask.The X-CD of optical image obtained from the photomask on transfer printing body,
Shown in (b) of Y-CD such as Fig. 8.
But in the case where size (greater than the resolution limit size of exposure device), photomask is exposed
And X-CD, Y-CD of the optical image formed on transfer printing body be compared with above-described embodiment 1, in comparison with 4.0 μm of design value
It changes larger.
According to above content, investigate on the photomask for the CD for having the resolution limit size less than exposure device,
Find out the correcting pattern number of (corresponding above-mentioned example 1) in the case where being corrected to the hole/dot pattern obtained on the photomask
According to method.
If the X-CD in the design pattern data of photomask is Xm (des), Y-CD is Ym (des), and area is Sm (des),
Being located at the actual X-CD being formed by preliminary mask is Xm (act), and Y-CD is Ym (act), area Sm
(act),
The X-CD in correcting pattern data is being set as Xm (cor), Y-CD is Ym (cor), when area is Sm (cor),
Ym (cor)={ Sm (des)/Sm (act) } * Ym (act) ... (1).
Here, (des), (act), (cor) respectively indicate design value, actual value, corrected value, Xm (cor)=Xm (des).
That is maintaining hole/dot pattern area in design pattern data in the undesirable situation of correction mask CD
, and the CD for correcting the high direction of CD controlling (is herein Y-CD), forms correcting pattern data.As a result, obtained transfer picture
Almost with the transfer in design pattern data as target as identical.
It, can be by grasping preliminary mask uses in order to obtain preliminary mask with setting in the process for grasping corrected value
The phase of hole/dot pattern included in meter pattern data, the area with hole/dot pattern for being formed on preliminary mask to each other
Guan Xing, to determine that CD (is herein the correcting value of Y-CD).Certainly, due to each number of hole/dot pattern area and X-CD, Y-CD
Value is related, therefore, as a result, the value of (1) formula above-mentioned in order to obtain, in the stage for calculating corrected value, can be used any value with
Random order is calculated.
(embodiment 2)
Imagination forms the design pattern data of photomask in the design according to the pattern for being intended to obtain on transfer printing body, and
The photomask for having transfer pattern is formed based on this, using exposure device to transfer pattern, is being transferred
The case where CD obtained on body deviates from target value (the case where example 2).In this case, X-CD, Y- in transfer pattern
Resolution limit size of the CD again smaller than exposure device.
In this case, in order to keep the CD of the transfer picture formed on transfer printing body consistent with target value, in photomask system
It makes and feeds back the deviation in process, and prepare using correcting pattern data the photomask re-calibrated.Moreover, from CD's
Target value deviation either because the CD of photomask deviation caused by, caused by being also possible to the process because of exposure, also
Caused by can be because of the two.
Also, in this case, in the generation of correcting pattern data, the correction of CD is not the value for making X-CD, Y-CD
Equably change, but (obtains correcting pattern data herein by making CD control a side with high accuracy for the value change of Y-CD)
's.
Firstly, preparing preliminary mask.The preliminary mask is the description process by being carried out using preliminary design pattern data
And manufacture.
Here, setting the X-CD in the design pattern data of photomask as Xm (des), Y-CD is Ym (des), area Sm
(des),
It is provided as being Xp (tar) for the X-CD for the pattern target for being intended to obtain on transfer printing body, Y-CD is Yp (tar), area
For Sp (tar),
If the actual X-CD being formed by preliminary mask is Xm (act), Y-CD is Ym (act), area Sm
(act),
Preliminary mask is exposed by exposure device, the X-CD for being located at the transfer picture obtained on transfer printing body is Xp
(act), Y-CD is Yp (act), and area is Sp (act),
If the X-CD in correcting pattern data is Xm (cor), Y-CD is Ym (cor), and area is Sm (cor).
Here, (tar) indicates target value, Sp (tar) is preferably previously according to Xp (tar) and Yp (tar) and pattern shape
Shape (round or ellipse etc.) is found out.
At this point, finding out Sm (cor) by relational expression below.
Sm (cor)=Sm (act) * { Sp (tar)/Sp (act) }
Next, finding out the correcting pattern data for meeting the Sm (cor).That is, since the pattern on mask is four sides
Shape, therefore Ym (cor)=Sm (cor)/Xm (act).
Here, Xm (cor) is also set to Xm (des).
That is, between the CD for the pattern being formed on transfer printing body and target value there are in the case where deviation, find out in order to
Obtain the required area based on mask required for target area obtained from the target CD on transfer printing body, and based on this come pair
The CD in the high direction of CD controlling (is corrected for Y-CD) herein, and forms correcting pattern data.
It, can will be based on MEEF's in the case where the influence of MEEF can not be ignored also, along with the miniaturization of pattern
The coefficient of value is multiplied by correcting value calculated among the above.
It in the above description, is in case where to form sectional hole patterns on transfer printing body, it is apparent that dot pattern
Identical method can be applied.
In actual design pattern data, configured with as the more of identical hole/dot pattern on transfer printing body (plate)
A hole/dot pattern.Correcting pattern data of the invention in order to obtain, preferably, for each progress of each hole/dot pattern
Above-mentioned calculating.This is because the reason of CD deviates is respectively different sometimes according to position in photomask face etc..
In addition, also same as Example 1 in the above embodiments 2, the sequence of calculating can be different, as long as obtaining identical
Result.
1, embodiment 2 that the invention is not restricted to the embodiments described.
The invention also includes the manufacturing methods for the photomask for applying above-mentioned plotting method.
The invention also includes the manufacturing method of following display device, this method including the use of producing by this method
Photomask transfers transfer pattern on transfer printing body.Here, display device includes for being assembled into as the aobvious of final products
Display device device in showing device.
As exposure device, using being 0.08~0.20 with numerical aperture NA, coherence factor σ is 0.2~0.7 degree
The projection pattern of optical system, equimultiple exposure device be it is useful, be mainly used as known FPD exposure device.About exposure
The wide wavelength light for being included them also can be used, it is preferable to use any of i line, h line, g line in optical wavelength.
Transfer can be transferred on the positive resist on transfer printing body with pattern, negative resist also can be used.
And it is possible to which the resist on transfer printing body is used as the resist pattern as etching mask, or use can also be transferred to
In on the photoresist for forming stereo structure member.
The purposes of the photomask produced using the present invention is not particularly limited.
For example, the photomask as display device manufacture, preferably as the photomask for being used to form contact hole.Especially
It is that the photomask can be used for the formation of so-called isolated sectional hole patterns.Also, the photoresist gap etc. that chromatic filter can also be formed
Works.
The photomask either so-called binary mask, or be also possible to for formed on transfer printing body have it is more
More greyscale photo masks of the three-dimensional resist pattern of a residual-film amount.Alternatively, being also possible to that comparison can be improved using phase shift film
The phase shifting mask of degree etc..
Also, the invention also includes photomasks obtained from by the above-mentioned manufacture method.
It include multiple rectangular sectional hole patterns, the size of rectangular long side setting the transfer pattern that photomask has
When for X-CD, the multiple sectional hole patterns have that X-CD is mutually different and the identical shape of area.When the size of short side is Y-CD,
It is preferred that X-CD and Y-CD is 3 μm or less.
Alternatively, including multiple rectangular dot patterns, rectangular long side setting the transfer pattern that photomask has
Size when being X-CD, the multiple dot pattern has that X-CD is mutually different and the identical shape of area.When the size of short side is
When Y-CD, preferably X-CD and Y-CD are less than 3 μm.
Alternatively, the transfer pattern also have the hole of square identical with above-mentioned rectangular hole/dot pattern area/
Dot pattern.
Here, with multiple areas pattern be the design based on obtained device design pattern data (that is, into
Pattern data before row correction) in have the pattern of identical CD (X-CD and Y-CD), therefore in final product, energy
It is enough to become the pattern for playing same function.
If using the manufacturing method based on plotting method of the invention and the photomask that the plotting method is utilized,
The CD margin of error can be inhibited in permissible range in the entire surface of transfer printing body hereinafter, being conducive to improve yield rate, production is imitated
Rate.
In addition, being not particularly limited using the purposes of photomask of the invention.It is preferably applied to following situation: using being used for
Manufacture includes the case where the photomask of the display device including liquid crystal, organic EL to manufacture the various layers of these display devices.
Also, photomask is either so-called binary mask, or is also possible to have with defined transmissivity
The photomask (more greyscale photo masks, phase-shift photomask etc.) of functional membrane pattern.
Claims (15)
1. a kind of pattern plotter method, is used for the design pattern data according to regulation and is described on photomask base plate,
There is the photomask including hole/dot pattern transfer pattern to be formed,
The pattern plotter method is characterised by comprising:
Correcting process corrects the design pattern data according to the corrected value found out in advance, so that correcting pattern data are obtained,
So that hole/dot pattern the CD obtained on transfer printing body and being exposed to the photomask is equal with target value；With
And
Describe process to be described using the correcting pattern data using drawing apparatus,
The drawing apparatus in the face parallel with the photomask base plate face, by CD control precision X-direction and with the X
Different driving methods is driven in the vertical Y-direction in direction,
In the correcting process, by being corrected as follows in design pattern data to the CD of the hole/dot pattern, come
To correcting pattern data, in the correction, the CD in X-direction and Y-direction is made to control the CD change on the higher direction of precision.
2. pattern plotter method according to claim 1, which is characterized in that
In the correcting process, find out that the hole/dot pattern CD obtained on transfer printing body is equal with target value, the transfer
With hole/dot pattern target area of pattern,
To described in the design pattern data and hole/dot pattern target area according to the transfer pattern
Hole/dot pattern CD is corrected as follows, to obtain correcting pattern data, in the correction, makes the CD in X-direction and Y-direction
Control the CD change on the higher direction of precision.
3. a kind of pattern plotter method, is used for the design pattern data according to regulation and is described on photomask base plate,
There is the photomask including hole/dot pattern transfer pattern to be formed,
The pattern plotter method is characterised by comprising:
Correcting process corrects the design pattern data according to the corrected value found out in advance, so that correcting pattern data are obtained,
So that hole/dot pattern the area obtained on transfer printing body and being exposed to the photomask is equal with target value；
And
Describe process to be described using the correcting pattern data using drawing apparatus,
The drawing apparatus in the face parallel with the photomask base plate face, by CD control precision X-direction and with the X
Different driving methods is driven in the vertical Y-direction in direction,
In the correcting process, by being corrected as follows in design pattern data to the CD of the hole/dot pattern, come
To correcting pattern data, in the correction, the CD in X-direction and Y-direction is made to control the CD change on the higher direction of precision.
4. pattern plotter method according to claim 3, which is characterized in that
In the correcting process, hole/dot pattern target area on the transfer printing body is found out,
Hole/dot pattern of the transfer pattern is found out according to hole/dot pattern target area on the transfer printing body
Target area,
To described in the design pattern data and hole/dot pattern target area according to the transfer pattern
Hole/dot pattern CD is corrected as follows, to obtain correcting pattern data, in the correction, makes the CD in X-direction and Y-direction
Control the CD change on the higher direction of precision.
5. pattern plotter method described according to claim 1~any one of 4, which is characterized in that
The drawing apparatus is the laser description device described using laser beam.
6. pattern plotter method described according to claim 1~any one of 4, which is characterized in that
The transfer in pattern hole/dot pattern X-CD and Y-CD be less than the exposure device that is exposed to the photomask
Resolution limit size.
7. pattern plotter method described according to claim 1~any one of 4, which is characterized in that
Hole/dot pattern X-CD and Y-CD in the transfer pattern is less than 3 μm.
8. pattern plotter method described according to claim 1~any one of 4, which is characterized in that
In the drawing apparatus, after laser beam has carried out feed motion in the X direction with fixed feeding amplitude, in the side Y
Upwards be fixed amplitude irradiation movement, the drawing apparatus by alternately and repeatedly carry out these act and in photomask base
Described on plate.
9. pattern plotter method described according to claim 1~any one of 4, which is characterized in that
In the correcting process, the CD of the design pattern data is replaced with CD corrected value and obtains correcting pattern data, it should
CD corrected value is so that on hole/dot pattern area included in the design pattern data and the photomask base plate
The mode of hole/dot pattern area equation and find out.
10. pattern plotter method described according to claim 1~any one of 4 characterized by comprising
The process for obtaining preliminary mask, the preliminary mask are to carry out pattern using the drawing apparatus before the correcting process
Obtained from description；And
Corrected value grasps process, and the corrected value is grasped by the X-CD and Y-CD of the preliminary mask.
11. a kind of manufacturing method of photomask comprising pattern plotter method described in any one of Claims 1 to 4.
12. a kind of photomask has the transfer pattern including multiple hole/dot patterns,
The photomask is characterized in that,
The X-CD and Y-CD of multiple hole/dot patterns in the transfer pattern less than 3 μm,
Multiple hole/dot patterns in the transfer pattern include hole/dot pattern group, the hole/dot pattern group hole/dot pattern tool
There is X-CD different from each other and quadrangle form that area is equal to each other.
13. a kind of manufacturing method of display device characterized by comprising
Prepare the process of photomask described in claim 12；And
Using optical system numerical aperture be 0.08~0.20 exposure device and the transfer is transferred to pattern and is turned
Print the process on body.
14. a kind of manufacturing method of display device comprising the light formed and to the design pattern data according to regulation is covered
Mould is exposed, and the transfer of photomask is transferred on transfer printing body with pattern,
The manufacturing method of the display device is characterised by comprising:
Correcting process corrects the design pattern data according to the corrected value found out in advance, so that correcting pattern data are obtained,
So that hole/dot pattern the CD obtained on transfer printing body and being exposed to the photomask is equal with target value；With
And
Describe process to describe photomask base plate using drawing apparatus using the correcting pattern data,
Development and etching are implemented to the photomask base plate and form the process with the photomask of the transfer pattern；With
And
The photomask is exposed using exposure device and forms hole/dot pattern process on transfer printing body,
Hole/dot pattern X-CD and Y-CD in the transfer pattern less than 3 μm,
In the correcting process, corrected as follows by the CD to the hole/dot pattern in the design pattern data
And correcting pattern data are obtained, in the correction, make in the Y-CD on the X-CD and Y-direction in X-direction, described drawing apparatus
CD control the higher direction of precision on CD change.
15. the manufacturing method of display device according to claim 14 characterized by comprising
The process for obtaining preliminary mask, the preliminary mask are to be described before the correcting process using the drawing apparatus
Obtained from；And
Corrected value grasps process, the corrected value is grasped by the CD of the hole/dot pattern, the hole/dot pattern is to pass through
The exposure device is exposed the preliminary mask and is formed on transfer printing body.
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| JP2017241926 | 2017-12-18 | ||
| JP2017-241926 | 2017-12-18 |
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| CN201811530914.3A Active CN110007555B (en) | 2017-12-18 | 2018-12-14 | Pattern drawing method, photomask and manufacturing method thereof, and manufacturing method of display device |
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| Country | Link |
|---|---|
| JP (1) | JP7126925B2 (en) |
| KR (1) | KR102229514B1 (en) |
| CN (1) | CN110007555B (en) |
| TW (1) | TWI710848B (en) |
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| KR20220090668A (en) | 2020-12-22 | 2022-06-30 | 삼성디스플레이 주식회사 | Method of managing critical dimension of photomask and method of manufacturing photomask |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI710848B (en) | 2020-11-21 |
| JP2019109499A (en) | 2019-07-04 |
| CN110007555B (en) | 2022-07-08 |
| KR102229514B1 (en) | 2021-03-17 |
| TW201928508A (en) | 2019-07-16 |
| JP7126925B2 (en) | 2022-08-29 |
| KR20190073276A (en) | 2019-06-26 |
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