CN110006776A - A kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material - Google Patents
A kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material Download PDFInfo
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Abstract
A kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material, the present invention relates to the evaluation methods of the anti-sputtering performance of ceramic material.Solve the problems, such as the existing screening and evaluation method lacked to the anti-sputtering performance of Hall electric propulsion device channel material.Method: one, by Hall electric propulsion device channel used in Machining of Ceramics, sample is obtained；Two, sample is placed on target platform, sets ion beam current at a distance from sample normal angle, ion source and sample and target platform revolving speed；Three, it vacuumizes, is passed through gas working medium, adjust gas working medium；Four, start ion source, successively set ion energy, anode voltage and acceleration voltage, set ion beam current and electronic beam current, carry out sputtering test, the sample after being sputtered；Five, sputter rate v and sputtering yield Y is calculated, specimen surface roughness, valence link composition, constituent content and surface topography after analysis sputtering.The present invention is used for the evaluation for the anti-sputtering performance of Hall electric propulsion device channel material.
Description
Technical field
The present invention relates to the evaluation methods of the anti-sputtering performance of ceramic material.
Background technique
Hall electric propulsion device is a kind of electric propulsion device with broad prospect of application, it is ionized propellant using electric energy
At plasma, and carry out accelerating ion to generate thrust in discharge process in channel.The propeller obtains on all kinds of satellites
To application, relevant demand is also growing day by day.As aircraft is to long-life and high-power continuous development, Hall electric propulsion device
Service life one of to have higher requirement, and limit the main factor of its service life be exactly ion stream to channel material
Sputter erosion.The divergence characterization of ion stream when due to work, plasma can collide with channel wall in channel, cause
Sputter erosion occurs for channel material.This not only results in the mass loss of channel component, or even can corrode completely channel material
Fall, keeps magnetic pole exposed under plasma environment, propeller is caused to fail.Therefore, the sputter erosion of channel material influences operation
Stability and restriction service life.For Hall thruster require long life serve feature, the anti-sputtering performance of channel material
Superiority and inferiority is to influence propeller service life key factor.The anti-sputtering performance of channel material is evaluated, channel material is evaluated
Anti- sputtering performance is strong and weak, solves screening and the evaluation problem of the anti-sputtering performance of channel material.
Summary of the invention
The invention solves the existing screenings and evaluation method lacked to the anti-sputtering performance of Hall electric propulsion device channel material
The problem of, and a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material is provided.
A kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material is to sequentially include the following steps:
One, it by Machining of Ceramics used in Hall electric propulsion device channel, then polishes, be cleaned by ultrasonic, dry and weigh,
Obtain sample；
Specimen surface roughness Ra≤0.5 μm；
Two, sample being placed on target platform, adjustment target platform is directed at ion source, and so that sample is in ion source work centre region,
Ion beam current and sample normal angle are set as 0 °~85 °, ion source is 100mm~500mm at a distance from sample, sets target platform
Revolving speed is 0.1r/min~10r/min；
Three, circulating cooling coolant-temperature gage is set, refrigeration machine is started, vacuum tank fire door and furnace body is locked, each valve is in
Closed state is evacuated to vacuum degree≤1 × 10-3Pa is passed through gas working medium, and gas working medium flow is 1sccm~20sccm, adjusts
Whole gas working medium flow is until flow and vacustat；
Four, start ion source, successively set ion energy and be 60V~100V as 100eV~1700eV, anode voltage and add
Fast voltage is 200V~400V, sets the ion beam current that ion beam current is 1.2 times as 1mA~90mA and electronic beam current, adjusts yin
Pole tension makes ion source steady operation, carries out sputtering test, and sputtering after the test, is cleaned by ultrasonic, is dried and is claimed
Amount is finally putting into drying box preservation, the sample after being sputtered；
Five, using the of poor quality of sputtering front and back sample, sputter rate v and sputtering yield Y, the sample after analysis sputtering are calculated
Surface roughness, valence link composition, constituent content and surface topography, that is, complete to be directed to the anti-sputtering of Hall electric propulsion device channel material
The evaluation method of energy；
DescribedWherein v be sputter erosion rate, unit be μm/h；m0To sputter preceding sample matter
Amount, unit g；M is the sample mass after sputtering, unit g；ρ is sample density, unit g/cm3；S is sputtering area, single
Position is cm2；T is sputtering test period, unit h；
DescribedWherein Y is sputtering yield, unit mm3/C；I is current density, unit mA/mm2, v is to splash
Penetrate erosion rate, unit is μm/h；
The i=I/ π r2, wherein I is ion beam current, unit mA；R is that ion beam current irradiates radius, unit mm.
The beneficial effects of the present invention are:
1, the evaluation method of the anti-sputtering performance of Hall electric propulsion device channel material elaborates the sputtering test side of channel material
The analysis and characterization method of materials microstructure after the evaluation method of the anti-sputtering performance of method, different materials, sputtering.It is adjusted in the present invention
The parameters such as energy, the line of ion source can carry out the anti-sputtering performance test of different parameters requirement.
2, for the selection of different materials, under identical sputtering experimental condition, the sputtering of channel material after analysis sputtering
Rate and sputtering yield, sputter erosion rate and the lower ceramic material of sputtering yield are more preferably elected to be as Hall thruster channel
Material preferably provides the ceramic material of good anti-sputtering performance.
For the analysis of same material, under different sputtering conditions, analyzes the sputter rate of ceramic material after sputtering, splashes
Yield, surface roughness, sample valence link composition, constituent content and surface topography are penetrated, the anti-sputtering of material and its each component is evaluated
Performance.It can analyze under different condition, for sputtering of materials erosion rate, sputtering yield, surface roughness, sample valence link group
It is analyzed identical at, the influence of constituent content and surface topography such as by sputter erosion rate, sputtering yield and surface roughness
Sputter erosion incident angle when, with the increase of projectile energy, sputter rate is gradually increased with sputtering yield, sample after sputtering
Surface roughness increase, be such as made up of sample valence link and constituent content analysis, the component that percentage composition increases after sputtering, then
To have more preferably anti-sputtering performance component in material, subsequent research and development Hall thruster channel material can be applied to.
3, present invention sputtering test method is simple, strong operability；The analysis and characterization of ceramic material institutional framework after sputtering
Targetedly, systemic.There is systematicness, accurate for the evaluation method of the anti-sputtering performance of Hall electric propulsion device channel material
Property, validity.
The present invention is used for a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material.
Detailed description of the invention
Fig. 1 is the sample three-dimensional optical photo after the sputtering that one step 4 of embodiment obtains；
Fig. 2 is that the sample valence link after the sputtering that one step 4 of embodiment obtains forms map；
Fig. 3 is the sample scans electron microscope after the sputtering that one step 4 of embodiment obtains；
Fig. 4 is the sample three-dimensional optical photo after the sputtering that two step 4 of embodiment obtains；
Fig. 5 is that the sample valence link after the sputtering that two step 4 of embodiment obtains forms map；
Fig. 6 is the sample scans electron microscope after the sputtering that two step 4 of embodiment obtains；
Fig. 7 is the sample three-dimensional optical photo after the sputtering that three step 4 of embodiment obtains；
Fig. 8 is that the sample valence link after the sputtering that three step 4 of embodiment obtains forms map；
Fig. 9 is the sample scans electron microscope after the sputtering that three step 4 of embodiment obtains；
Figure 10 is sample arranging schematic diagram in one step 2 of embodiment, and 1 is sample, and 2 be cover board, and 3 be sample holder；
Figure 11 is one working system diagram of embodiment, and 1 is vacuum tank, and 2 be ion source, and 3 be gas source, and 4 be target platform, and 5 are
Diffusion pump, 6 be lobe pump, and 7 be mechanical pump, and 8 be refrigeration machine, and 9 be control power supply.
Specific embodiment
Specific embodiment 1: a kind of evaluation for the anti-sputtering performance of Hall electric propulsion device channel material of present embodiment
Method is to sequentially include the following steps:
One, it by Machining of Ceramics used in Hall electric propulsion device channel, then polishes, be cleaned by ultrasonic, dry and weigh,
Obtain sample；
Specimen surface roughness Ra≤0.5 μm；
Two, sample being placed on target platform, adjustment target platform is directed at ion source, and so that sample is in ion source work centre region,
Ion beam current and sample normal angle are set as 0 °~85 °, ion source is 100mm~500mm at a distance from sample, sets target platform
Revolving speed is 0.1r/min~10r/min；
Three, circulating cooling coolant-temperature gage is set, refrigeration machine is started, vacuum tank fire door and furnace body is locked, each valve is in
Closed state is evacuated to vacuum degree≤1 × 10-3Pa is passed through gas working medium, and gas working medium flow is 1sccm~20sccm, adjusts
Whole gas working medium flow is until flow and vacustat；
Four, start ion source, successively set ion energy and be 60V~100V as 100eV~1700eV, anode voltage and add
Fast voltage is 200V~400V, sets the ion beam current that ion beam current is 1.2 times as 1mA~90mA and electronic beam current, adjusts yin
Pole tension makes ion source steady operation, carries out sputtering test, and sputtering after the test, is cleaned by ultrasonic, is dried and is claimed
Amount is finally putting into drying box preservation, the sample after being sputtered；
Five, using the of poor quality of sputtering front and back sample, sputter rate v and sputtering yield Y, the sample after analysis sputtering are calculated
Surface roughness, valence link composition, constituent content and surface topography, that is, complete to be directed to the anti-sputtering of Hall electric propulsion device channel material
The evaluation method of energy；
DescribedWherein v be sputter erosion rate, unit be μm/h；m0To sputter preceding sample matter
Amount, unit g；M is the sample mass after sputtering, unit g；ρ is sample density, unit g/cm3；S is sputtering area, single
Position is cm2；T is sputtering test period, unit h；
DescribedWherein Y is sputtering yield, unit mm3/C；I is current density, unit mA/mm2, v is to splash
Penetrate erosion rate, unit is μm/h；
The i=I/ π r2, wherein I is ion beam current, unit mA；R is that ion beam current irradiates radius, unit mm.
Sample described in step 1 can be disk, or be the regular shape with other sizes, such as: square, length
Cube etc..
Step 2 intermediate ion line and sample normal angle (incident angle) can be 0 °, 15 °, 30 °, 45 °, 60 °, 75 °
Angularly, continuously adjustable at 0 °~85 °, target platform revolving speed is set, the speed of rotation can be continuous within the scope of 0.1r/min~10r/min
It is adjustable.
Guarantee that hydraulic pressure meets requirement in step 3.
Step 4 intermediate ion energy is continuously adjustable in 100eV~1700eV, and 60V, 80V and 100V may be selected in anode voltage,
Acceleration voltage may be selected 200V, 250V and 300V, and ion beam current can be continuously adjustable in 1mA~90mA, electronic beam current be set as from
1.2 times of beamlet stream；Also Hall thruster model machine can be used as ion source, set satisfactory running parameter, splashed
Penetrate test.
The beneficial effect of present embodiment is:
1, the evaluation method of the anti-sputtering performance of Hall electric propulsion device channel material elaborates the sputtering test side of channel material
The analysis and characterization method of materials microstructure after the evaluation method of the anti-sputtering performance of method, different materials, sputtering.This specific embodiment party
The parameters such as energy, the line of ion source are adjusted in formula, can carry out the anti-sputtering performance test of different parameters requirement.
2, for the selection of different materials, under identical sputtering experimental condition, the sputtering of channel material after analysis sputtering
Rate and sputtering yield, sputter erosion rate and the lower ceramic material of sputtering yield are more preferably elected to be as Hall thruster channel
Material preferably provides the ceramic material of good anti-sputtering performance.
For the analysis of same material, under different sputtering conditions, analyzes the sputter rate of ceramic material after sputtering, splashes
Yield, surface roughness, sample valence link composition, constituent content and surface topography are penetrated, the anti-sputtering of material and its each component is evaluated
Performance.It can analyze under different condition, for sputtering of materials erosion rate, sputtering yield, surface roughness, sample valence link group
It is analyzed identical at, the influence of constituent content and surface topography such as by sputter erosion rate, sputtering yield and surface roughness
Sputter erosion incident angle when, with the increase of projectile energy, sputter rate is gradually increased with sputtering yield, sample after sputtering
Surface roughness increase, be such as made up of sample valence link and constituent content analysis, the component that percentage composition increases after sputtering, then
To have more preferably anti-sputtering performance component in material, subsequent research and development Hall thruster channel material can be applied to.
3, present embodiment sputtering test method is simple, strong operability；Ceramic material institutional framework after sputtering
It is analyzed and characterized targeted, systematicness.There is system for the evaluation method of the anti-sputtering performance of Hall electric propulsion device channel material
Property, accuracy, validity.
Specific embodiment 2: the present embodiment is different from the first embodiment in that: ion described in step 2
Source is Kaufman type ion source or Hall electric propulsion device model machine.It is other same as the specific embodiment one.
Present embodiment is using Kaufman type ion source as operation source, and uniformity is high, and diversity is low, ion source system
It unites more simple.
Specific embodiment 3: unlike one of present embodiment and specific embodiment one or two: institute in step 3
The gas working medium stated is Xe gas, Kr gas, Ar gas or I2Gas.It is other the same as one or two specific embodiments.
Specific embodiment 4: unlike one of present embodiment and specific embodiment one to three: being set in step 3
Determining circulating cooling coolant-temperature gage is 15 DEG C~20 DEG C.It is other identical as specific embodiment one to three.
Specific embodiment 5: unlike one of present embodiment and specific embodiment one to four: surpassing in step 1
Sound cleaning, drying are specifically to sequentially include the following steps: the ultrasonic cleaning 60min using alcohol as medium, utilize electric heating forced air drying
Case dries 2h under conditions of temperature is 120 DEG C.It is other identical as specific embodiment one to four.
Specific embodiment 6: unlike one of present embodiment and specific embodiment one to five: surpassing in step 4
Sound cleaning, drying are specifically to sequentially include the following steps: the ultrasonic cleaning 60min using alcohol as medium, utilize electric heating forced air drying
Case dries 2h under conditions of temperature is 120 DEG C.It is other identical as specific embodiment one or five.
Specific embodiment 7: unlike one of present embodiment and specific embodiment one to six: sharp in step 5
With the quality of high accuracy analysis balance or quartz crystal microbalance measurement sputtering front and back sample, using laser confocal microscope or
Specimen surface roughness after super depth of field three-dimensional microscopic analysis sputtering, the examination after being sputtered using X-ray photoelectron spectroscopic analysis
Sample valence link composition utilizes the sample constituent content and surface shape after scanning electron microscope or AFM Analysis sputtering
Looks.It is other identical as specific embodiment one to six.
Specific embodiment 8: unlike one of present embodiment and specific embodiment one to seven: being set in step 2
Determine ion beam current and sample normal angle is 30 °~85 °, ion source is 300mm~500mm at a distance from sample, sets target platform
Revolving speed is 3r/min~10r/min.It is other identical as specific embodiment one to seven.
Specific embodiment 9: unlike one of present embodiment and specific embodiment one to eight: being set in step 3
Determining circulating cooling coolant-temperature gage is 20 DEG C, starts refrigeration machine, locks vacuum tank fire door and furnace body, and each valve is in and closes shape
State successively starts mechanical pump, lobe pump and diffusion pump and vacuumizes, until vacuum degree 1 × 10-3Pa is passed through gas working medium, gas working medium
Flow is 4sccm, and adjustment gas working medium flow is until flow and vacustat.It is other with one to eight phase of specific embodiment
Together.
Specific embodiment 10: unlike one of present embodiment and specific embodiment one to nine: being opened in step 4
Dynamic ion source, successively set that ion energy is 100V as 200eV, anode voltage and acceleration voltage is 300V, setting ion beam current
It is 36mA for 30mA and electronic beam current, adjusting cathode voltage makes ion source steady operation, carries out sputtering test 4h.It is other with
Specific embodiment one to nine is identical.
Beneficial effects of the present invention are verified using following embodiment:
Embodiment one:
A kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material is to sequentially include the following steps:
One, using inner circle cutting machine, cylindrical grinder and surface grinding machine by ceramic material used in Hall electric propulsion device channel
Diameter is processed into for 10mm and with a thickness of 3mm, is then polished, 60min is cleaned by ultrasonic using alcohol as medium, utilizes electric heating air blast
Drying box dries 2h under conditions of temperature is 120 DEG C, finally weighs, obtain sample；
Ra=0.4 μm of the specimen surface roughness；
Ceramic material used in the Hall electric propulsion device channel is h-BN-Sialon complex phase ceramic；
Two, sample is fixed on sample holder, is placed in target platform, block sample face with the cover board with sample same material
Long-pending half, adjustment target platform are directed at ion source, sample are made to be in ion source work centre region, set ion beam current and SAMPLE METHOD
It is 30 ° to angle, ion source is 300mm at a distance from sample, sets target platform revolving speed as 3r/min；
Ion source described in step 2 is Kaufman type ion source；
Three, circulating cooling coolant-temperature gage is set as 20 DEG C, starts refrigeration machine, vacuum tank fire door and furnace body is locked, by each valve
Door is in close state, and is successively started mechanical pump, lobe pump and diffusion pump and is vacuumized, until vacuum degree is 1 × 10-3Pa is passed through gas
Body working medium, gas working medium flow are 4sccm, and adjustment gas flow is until flow and vacustat；
The gas working medium is Xe gas；
Four, start ion source, successively set that ion energy is 100V as 200eV, anode voltage and acceleration voltage is 300V,
It is 36mA that ion beam current, which is set, as 30mA and electronic beam current, and adjusting cathode voltage makes ion source steady operation, is sputtered
4h is tested, sputtering is cleaned by ultrasonic 60min using electric drying oven with forced convection after the test, using alcohol as medium and is in temperature
2h is dried under conditions of 120 DEG C, is finally weighed, and is put into drying box preservation, the sample after being sputtered；
Five, the quality that sputtering front and back sample is measured using high accuracy analysis balance, calculates sputter rate v and sputtering yield Y,
Using the specimen surface roughness after laser confocal microscope analysis sputtering, after being sputtered using X-ray photoelectron spectroscopic analysis
Sample valence link composition, sample constituent content and surface topography after being sputtered using scanning electron microscope analysis, i.e., completion needle
To the evaluation method of the anti-sputtering performance of Hall electric propulsion device channel material；
DescribedWherein v be sputter erosion rate, unit be μm/h；m0To sputter preceding sample matter
Amount, unit g；M is the sample mass after sputtering, unit g；ρ is sample density, unit g/cm3；S is sputtering area, single
Position is cm2；T is sputtering test period, unit h；
DescribedWherein Y is sputtering yield, unit mm3/C；I is current density, unit mA/mm2, v is to splash
Penetrate erosion rate, unit is μm/h；
The i=I/ π r2, wherein I is ion beam current, unit mA；R is that ion beam current irradiates radius, unit mm.
The preparation method of h-BN-Sialon complex phase ceramic described in step 1 is according to " AlN additive amount is to BN base composite ceramic
The phase composition of porcelain object, the influence of microstructure and mechanical property ", silicate journal, 2013 (12), 1603-1608.
Through measuring, m0=0.48218g, m=0.48197g, ρ=2.05g/cm3, S=39.25 × 10-2cm2, r=66mm,
And t=4h, it is computed i=2.19 × 10-3mA/mm2, sputter rate v is 0.65 μm/h, and sputtering yield Y is 0.08mm3/C。
Embodiment two: the present embodiment is unlike embodiment one: step 4 intermediate ion energy is 400eV.It is other with it is real
It is identical to apply example one.
Through measuring, m0=0.48217g, m=0.48155g, ρ=2.05g/cm3, S=39.25 × 10-2cm2, r=66mm,
And t=4h, it is computed i=2.19 × 10-3mA/mm2, sputter rate v is 1.93 μm/h, and sputtering yield Y is 0.24mm3/C。
Embodiment three: the present embodiment is unlike embodiment one: step 4 intermediate ion energy is 600eV.It is other with it is real
It is identical to apply example one.
Through measuring, m0=0.48226g, m=0.48141g, ρ=2.05g/cm3, S=39.25 × 10-2cm2, r=66mm,
And t=4h, it is computed i=2.19 × 10-3mA/mm2, sputter rate v is 2.64 μm/h, and sputtering yield Y is 0.33mm3/C。
It can be found by the comparison of embodiment one, embodiment two and embodiment three, when identical sputter erosion incident angle,
With the increase of projectile energy, sputter rate and the sputtering yield of sample are increased separately.
Figure 10 is sample arranging schematic diagram in one step 2 of embodiment, and 1 is sample, and 2 be cover board, and 3 be sample holder；It will examination
Sample is fixed on sample holder, is placed in target platform, and the half of Area of Sample is blocked with the cover board with sample same material.
Figure 11 is one working system diagram of embodiment, and 1 is vacuum tank, and 2 be ion source, and 3 be gas source, and 4 be target platform, and 5 are
Diffusion pump, 6 be lobe pump, and 7 be mechanical pump, and 8 be refrigeration machine, and 9 be control power supply；Ion source is set inside vacuum tank, with ion
The corresponding setting target platform in source position, one end of gas source is connected with vacuum tank, and is set to ion source side, mechanical series connection of pumps sieve
Thatch pump and diffusion pump are connected with vacuum tank, and refrigeration machine connects mechanical pump, lobe pump, diffusion pump and target platform, control the defeated of power supply
Outlet is connected with the input terminal of ion source.
Mechanical series connection of pumps lobe pump and diffusion pump provide high vacuum environment for vacuumizing for tank body；Refrigeration machine connects machine
Target platform in tool pump, lobe pump, diffusion pump and vacuum tank, for providing recirculated cooling water；Using high-purity Xe gas as gas work
Matter provides propellant for ion source；Ion source and control power supply as generate plasma device, for sputtering test provide from
Subflow.
Fig. 1 is the sample three-dimensional optical photo after the sputtering that one step 4 of embodiment obtains；Sample after sputtering as seen from the figure
Three-dimensional appearance, obtain the surface roughness of sample.
Fig. 2 is that the sample valence link after the sputtering that one step 4 of embodiment obtains forms map；As seen from the figure, sample after sputtering
The element species and valence link on surface form.
Fig. 3 is the sample scans electron microscope after the obtained sputtering of one step 4 of embodiment, and to carrying out constituent content herein
Analysis, table 1 are the sample constituent content ratio after the sputtering that one step 4 of embodiment obtains.
Table 1
| Element | Wt% | Atomic percent |
| B | 09.45 | 17.20 |
| N | 21.08 | 29.60 |
| O | 08.00 | 09.84 |
| Al | 10.70 | 07.80 |
| Si | 50.77 | 35.56 |
It is 0.426 μm by figure and table it is found that specimen surface roughness increases after sputtering；Composition includes h-BN phase, SiO2
Phase, AlN phase.
Fig. 4 is the sample three-dimensional optical photo after the sputtering that two step 4 of embodiment obtains；As seen from the figure, sample after sputtering
Three-dimensional appearance, obtain the surface roughness of sample.
Fig. 5 is that the sample valence link after the sputtering that two step 4 of embodiment obtains forms map；As seen from the figure, sample after sputtering
The element species and valence link on surface form.
Fig. 6 is the sample scans electron microscope after the obtained sputtering of two step 4 of embodiment, and to carrying out constituent content herein
Analysis, table 2 are the sample constituent content ratio after the sputtering that two step 4 of embodiment obtains.
Table 2
It is 0.445 μm by figure and table it is found that specimen surface roughness increases after sputtering；Composition includes h-BN phase, SiO2
Phase, AlN phase, the sample after the sputtering of comparative example one, h-BN phase content is reduced, and SiO2Phase, AlN phase content increase.
Fig. 7 is the sample three-dimensional optical photo after the sputtering that three step 4 of embodiment obtains；Sample after sputtering as seen from the figure
Three-dimensional appearance, obtain the surface roughness of sample.
Fig. 8 is that the sample valence link after the sputtering that three step 4 of embodiment obtains forms map；Sample after sputtering as seen from the figure
The element species and valence link on surface form.
Fig. 9 is the sample scans electron microscope after the obtained sputtering of three step 4 of embodiment, and to carrying out constituent content herein
Analysis, table 3 are the sample constituent content ratio after the sputtering that three step 4 of embodiment obtains.
Table 3
| Element | Wt% | Atomic percent |
| B | 00.00 | 00.00 |
| N | 19.74 | 31.33 |
| O | 07.90 | 10.97 |
| Al | 13.03 | 10.74 |
| Si | 59.33 | 46.96 |
It is 0.461 μm by figure and table it is found that specimen surface roughness increases after sputtering；Composition includes SiO2Phase, AlN phase
Two-phase, comparative example one sputter after sample, h-BN phase, and SiO is not present2Phase, AlN phase content increase.
When identical sputter erosion incident angle, with the increase of projectile energy: (1) sputter rate and sputtering yield be gradually
Increase；(2) surface roughness of sample increases after sputtering；(3) h-BN phase content gradually decreases in sample after sputtering, SiO2Phase,
AlN phase content increases, and shows SiO2Phase, the anti-sputtering performance of AlN phase are better than h-BN phase.
Claims (10)
1. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material, it is characterised in that one kind is directed to Hall
The evaluation method of the anti-sputtering performance of electric propulsion device channel material is to sequentially include the following steps:
One, it by Machining of Ceramics used in Hall electric propulsion device channel, then polishes, be cleaned by ultrasonic, dry and weigh, obtain
Sample；
Specimen surface roughness Ra≤0.5 μm；
Two, sample is placed on target platform, adjustment target platform is directed at ion source, and sample is made to be in ion source work centre region, sets
Ion beam current and sample normal angle are 0 °~85 °, and ion source is 100mm~500mm at a distance from sample, set target platform revolving speed
For 0.1r/min~10r/min；
Three, circulating cooling coolant-temperature gage is set, refrigeration machine is started, locks vacuum tank fire door and furnace body, each valve is in and is closed
State is evacuated to vacuum degree≤1 × 10-3Pa is passed through gas working medium, and gas working medium flow is 1sccm~20sccm, adjusts gas
Body working medium flow is until flow and vacustat；
Four, start ion source, successively set ion energy and be 60V~100V as 100eV~1700eV, anode voltage and accelerate electricity
Pressure is 200V~400V, sets the ion beam current that ion beam current is 1.2 times as 1mA~90mA and electronic beam current, adjusts cathode electricity
Pressure makes ion source steady operation, carries out sputtering test, and sputtering after the test, is cleaned by ultrasonic, is dried and is weighed, most
After be put into drying box preservation, the sample after being sputtered；
Five, using the of poor quality of sputtering front and back sample, sputter rate v and sputtering yield Y, the specimen surface after analysis sputtering are calculated
Roughness, valence link composition, constituent content and surface topography, that is, complete for the anti-sputtering performance of Hall electric propulsion device channel material
Evaluation method；
DescribedWherein v be sputter erosion rate, unit be μm/h；m0To sputter preceding sample mass, unit
For g；M is the sample mass after sputtering, unit g；ρ is sample density, unit g/cm3；S is sputtering area, unit cm2；
T is sputtering test period, unit h；
DescribedWherein Y is sputtering yield, unit mm3/C；I is current density, unit mA/mm2, v is that sputtering is invaded
Lose rate, unit be μm/h；
The i=I/ π r2, wherein I is ion beam current, unit mA；R is that ion beam current irradiates radius, unit mm.
2. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that ion source described in step 2 is Kaufman type ion source or Hall electric propulsion device model machine.
3. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that gas working medium described in step 3 is Xe gas, Kr gas, Ar gas or I2Gas.
4. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that setting circulating cooling coolant-temperature gage in step 3 as 15 DEG C~20 DEG C.
5. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
Be characterized in that being cleaned by ultrasonic in step 1, drying is specifically to sequentially include the following steps: using alcohol as medium to be cleaned by ultrasonic
60min dries 2h under conditions of temperature is 120 DEG C using electric drying oven with forced convection.
6. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
Be characterized in that being cleaned by ultrasonic in step 4, drying is specifically to sequentially include the following steps: using alcohol as medium to be cleaned by ultrasonic
60min dries 2h under conditions of temperature is 120 DEG C using electric drying oven with forced convection.
7. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that in step 5 utilizing using the quality of high accuracy analysis balance or quartz crystal microbalance measurement sputtering front and back sample
Specimen surface roughness after laser confocal microscope or super depth of field three-dimensional microscopic analysis sputtering, utilizes x-ray photoelectron
Sample valence link composition after energy spectrum analysis sputtering utilizes the sample after scanning electron microscope or AFM Analysis sputtering
Constituent content and surface topography.
8. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that setting ion beam current and sample normal angle in step 2 as 30 °~85 °, ion source is at a distance from sample
300mm~500mm sets target platform revolving speed as 3r/min~10r/min.
9. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that setting circulating cooling coolant-temperature gage in step 3 as 20 DEG C, starts refrigeration machine, lock vacuum tank fire door and furnace body, it will be each
A valve is in close state, and is successively started mechanical pump, lobe pump and diffusion pump and is vacuumized, until vacuum degree 1 × 10-3Pa is passed through
Gas working medium, gas working medium flow are 4sccm, and adjustment gas working medium flow is until flow and vacustat.
10. a kind of evaluation method for the anti-sputtering performance of Hall electric propulsion device channel material according to claim 1,
It is characterized in that starting ion source in step 4, successively sets that ion energy is 100V as 200eV, anode voltage and acceleration voltage is
300V, setting ion beam current as 30mA and electronic beam current is 36mA, and adjusting cathode voltage makes ion source steady operation, is carried out
Sputtering test 4h.
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