CN109994652A - Cathode hydridization decorative layer and organic electroluminescence device and method - Google Patents
Cathode hydridization decorative layer and organic electroluminescence device and method Download PDFInfo
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- CN109994652A CN109994652A CN201910275390.6A CN201910275390A CN109994652A CN 109994652 A CN109994652 A CN 109994652A CN 201910275390 A CN201910275390 A CN 201910275390A CN 109994652 A CN109994652 A CN 109994652A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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Abstract
The present invention relates to electronic field more particularly to cathode hydridization decorative layer and organic electroluminescence device and methods.The anion generated in HML doped layer can be filled into the native electronic trap of Bphen, enhance the injection of electronics；Decompose the lithium ion Li generated+It can be spread into organic layer, form a kind of gap state, the exciton in luminescent layer is caused to quench；MoO in HML structure3Layer can remove the gap state of the chemical reaction generation of metal electrode Al and organic film interface, so that device be made to have more electrons and holes compound in luminescent layer.The experimental results showed that the maximum current efficiency and maximum power efficiency of device are respectively 4.28cd/A and 2.19lm/W, 25.5% and 23.7% are improved compared to parametric device.
Description
Technical field
The present invention relates to electronic field more particularly to cathode hydridization decorative layer and organic electroluminescence device and methods.
Background technique
The mobility of usual hole mobile material is greater than the mobility of electron transport material in OLEDs, shows in device
The transmission of middle both hole and electron is unbalanced.The electron injection barrier of usual cathode is higher than hole, so the injection of electronics
Want difficult compared to hole.In order to reduce electron injection barrier, LiF thin layer use can all be added in OLEDs under normal circumstances
Make the implanted layer of cathode electronics, effect is to form dipole layer, promotes electron tunneling, in order to reduce the injection gesture of cathode electronics
It builds.However, the filming performance of LiF is simultaneously bad on some organic films, the LiF film thickness of thermal evaporation preparation is required strictly,
And LiF may resolve into ion during vapor deposition, and spread into organic layer, thus performance and stable production to device
Raw certain influence；4,7- diphenyl -1,10- phenanthroline correspond to Bphen；Lithium fluoride corresponds to LiF；
Deng Zhenbo, S T Lee, D P Webb, et al.Synthetic Metals, 1999,107 (2): 107.；
Zheng Xinyou, Wu Youzhi, Sun Runguang, et al.Thin Solid Films, 2005,478:
252.；
Takahiro Yokoyama, Daisuke Yoshimura, Eisuke Ito, et al.Japanese Journal
Of Applied Physics, 2003,42:3666.
Summary of the invention
The purpose of invention: in order to provide a kind of better cathode hydridization decorative layer of effect and organic electroluminescence device,
Specific purposes are shown in multiple substantial technological effects of specific implementation part.
In order to reach purpose as above, the present invention is adopted the following technical scheme that:
Cathode hydridization decorative layer, which is characterized in that it has three-decker, is 4,7- diphenyl -1,10- phenanthroline respectively
(Bphen) doping lithium fluoride (LiF) layer, aluminium thin layer and molybdenum trioxide (MoO3) thin layer.
A method of make compound in luminescent layer in more electrons and holes, which is characterized in that Alq3Doped layer
Upper depositing Al thin layer, is Alq3N-type doping effective ways；In Alq3The Al atom of middle diffusion can promote the decomposition of LiF,
Form free radical anion Alq3 ?With lithium ion Li+, the intrinsic charge trap that anion can gradually in packing material formed more
High low field carrier mobility；So the native electronic that the anion generated in HML doped layer can be filled into Bphen is fallen into
Trap enhances the injection of electronics；Decompose the lithium ion Li generated+It can be spread into organic layer, form a kind of gap state, cause to shine
Exciton quenching in layer；MoO in HML structure3Layer can remove the chemical reaction of metal electrode Al Yu organic film interface
The gap state of generation, so that device be made to have more electrons and holes compound in luminescent layer.
A kind of novel electroluminescent device, which is characterized in that the modification of multilayered structure cathode hydridization is added in OLEDs
Layer HML, multilayered structure cathode hydridization decorative layer HML have three-decker, are 4,7- diphenyl -1,10- phenanthroline doping fluorine respectively
Change lithium layer, aluminium thin layer and molybdenum trioxide thin layer.
It using the present invention of technical solution as above, has the advantages that compared with the existing technology: organic small point in OLEDs
In sub- material, the mobility of electronics is often less than the mobility in hole, and the work function of Al electrode is very high (about 4.3eV),
It is unfavorable for the injection of cathode electronics, causes hole and electron concentration in device unbalance.We are with cathode hydridization decorative layer HML come generation
For traditional material LiF, enhance the injection of electronics, balance the carrier in device more, to improve the photism of device
Energy.The experimental results showed that the maximum current efficiency and maximum power efficiency of device are respectively 4.28cd/A and 2.19lm/W, compare
Parametric device improves 25.5% and 23.7%.
Detailed description of the invention
In order to further illustrate the present invention, it is further illustrated with reference to the accompanying drawing:
Fig. 1 device A and B are in 40mA/cm2Under EL normalize spectrum；
EL spectrum of Fig. 2 device A under different current densities；
EL of Fig. 3 device A in the case where different electric currents are close normalizes spectrum；
Current density-current efficiency curve of Fig. 4 device A and B；
Current density-power efficiency curve of Fig. 5 device A and B；
Current density-voltage (J-V) curve of Fig. 6 device A and B；
The structure chart of Fig. 7 device A.
Specific embodiment
With reference to the accompanying drawings and detailed description, the present invention is furture elucidated, it should be understood that following specific embodiments are only
For illustrating the present invention rather than limiting the scope of the invention.This patent provides a variety of concomitant regimens, and different expression place belongs to
In the either parallel type scheme of the modified scheme based on basic scheme.Every kind of scheme has the unique features of oneself.
The multilayered structure cathode hydridization decorative layer HML that we design, has three-decker, is diphenyl -1 4,7- respectively,
10- phenanthroline (Bphen) doping lithium fluoride (LiF) layer, aluminium thin layer and molybdenum trioxide (MoO3) thin layer.
Device A:ITO/NPB (75nm)/Alq3(75nm)/HML/Al(100nm)
Device B:ITO/NPB (75nm)/Alq3(75nm)/LiF(0.5nm)/Al(100nm)
HML:Bphen:LiF (6%, 5nm)/Al (1nm)/MoO3(5nm)
According to F.So et al., in Alq3Depositing Al thin layer on doped layer is Alq3N-type doping effective ways.?
Alq3The Al atom of middle diffusion can promote the decomposition of LiF, form free radical anion Alq3 ?With lithium ion Li+, anion can
With the intrinsic charge trap in gradually packing material, higher low field carrier mobility is formed.So being produced in HML doped layer
Raw anion can be filled into the native electronic trap of Bphen, enhance the injection of electronics.Decompose the lithium ion Li generated+Meeting
It is spread into organic layer, forms a kind of gap state, the exciton in luminescent layer is caused to quench.MoO in HML structure3Layer can be gone
Except the gap state that the chemical reaction of metal electrode Al and organic film interface generates, thus make device have more electronics and
Hole is compound in luminescent layer.
The advantages of the art of this patent or beneficial effect
Fig. 1 is the electroluminescent (Electroluminescence of device A and device B；EL) normalization spectrum is (in 40mA/
cm2Lower measurement).Device B's as shown in the figure shines from Alq3, the peak value of EL luminous spectrum and brightness be respectively 534nm and
1357cd/m2, can find out that the luminous spectrum of device A and B are consistent from figure, the peak value of the EL luminous spectrum of device A and brightness point
It is not 534nm and 1638cd/m2, this illustrates HML, and there is no the glow peak positions for changing device.
We are again to the EL spectrum of device A in different current density (5mA/cm2、10mA/cm2、20mA/cm2、40mA/
cm2、100mA/cm2) under measured, as shown in Figure 2.Gradually increasing with current density can be found out from EL spectrum, come
From Alq3It is luminous also enhance therewith, (the 1-100mA/cm in test scope2), brightness maxima is in 100mA/cm2Electric current it is close
Lower degree is 4277cd/m2.But the peak position of luminous spectrum, always there is no variation, peak value is still 534nm.It is normalized from Fig. 3
It can be more apparent from spectrum, from 5mA/cm2Current density increase to 100mA/cm2Current density during, we
The curve of EL spectrum under the different current densities of measurement is all consistent, and no change has taken place always for peak position.This shows with electricity
The increase of stream, there is no the glow peak position for changing device, the spectrum stabilities of device for the cathode hydridization decorative layer that we design
Very well.
We replace traditional material LiF with cathode hydridization decorative layer HML, in 0-100mA/cm2In test scope, device
Maximum current efficiency (Current Efficiency；) and maximum power efficiency (Power Efficiency CE；PE) respectively
For 4.28cd/A and 2.19lm/W, 25.5% and 23.7% are improved compared to parametric device.The Current density-voltage characteristic of device
Curve shows that the injection of electronics can be enhanced in cathode hydridization decorative layer, balances the carrier in device more, to improve
The luminescent properties of device.According to the literature, buffer layer of the o-MeO-DMBI as device, with use LiF as electron injecting layer
Parametric device compare, the driving voltage of device is reduced to 3.2V from 3.5V, and device efficiency improves 25.2%；Li3N is as slow
The device efficiency for rushing layer improves 35%.Buffer layer of the composite construction of Liq and CsOx composition as device, the electric current effect of device
Rate is in current density 20mA/cm2And 200mA/cm2Lower to enhance about 22% and 31% respectively, power efficiency is close in same electric current
About 29% and 36% is enhanced under degree respectively.
We replace traditional material LiF with cathode hydridization decorative layer HML, in 0-100mA/cm2 test scope, device
Maximum current efficiency (Current Efficiency；) and maximum power efficiency (Power Efficiency CE；PE) respectively
For 4.28cd/A and 2.19lm/W, 25.5% and 23.7% are improved compared to parametric device.The Current density-voltage characteristic of device
Curve shows that the injection of electronics can be enhanced in cathode hydridization decorative layer, balances the carrier in device more, to improve
The luminescent properties of device.
Generally speaking: we replace traditional material LiF with cathode hydridization decorative layer HML, test model in 0-100mA/cm2
In enclosing, maximum current efficiency (the Current Efficiency of device；) and maximum power efficiency (Power CE
Efficiency；PE) it is respectively 4.28cd/A and 2.19lm/W, improves 25.5% and 23.7% compared to parametric device.Device
Current density-voltage characteristic curve show that the injection of electronics can be enhanced in cathode hydridization decorative layer, make the carrier in device
It more balances, to improve the luminescent properties of device.
In a creative way, above each effect is individually present, moreover it is possible to the combination of the above results is completed with a nested structure.
It should be noted that multiple schemes that this patent provides include the basic scheme of itself, independently of each other, not mutually
It restricts, but it can also be combined with each other in the absence of conflict, reach multiple effects and realize jointly.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of this field
Personnel should be recognized that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this hairs
Bright principle, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these variations
It is both fallen in claimed range with improving.
Claims (3)
1. cathode hydridization decorative layer, which is characterized in that it has three-decker, is 4,7- diphenyl -1,10- phenanthroline respectively
(Bphen) doping lithium fluoride (LiF) layer, aluminium thin layer and molybdenum trioxide (MoO3) thin layer.
2. a kind of make the method compound in luminescent layer in more electrons and holes, which is characterized in that Alq3It sinks on doped layer
Product Al thin layer, is Alq3N-type doping effective ways；In Alq3The Al atom of middle diffusion can promote the decomposition of LiF, be formed
Free radical anion Alq3 ?With lithium ion Li+, the intrinsic charge trap that anion can gradually in packing material formed higher
Low field carrier mobility；So the anion generated in HML doped layer can be filled into the native electronic trap of Bphen,
Enhance the injection of electronics；Decompose the lithium ion Li generated+It can be spread into organic layer, form a kind of gap state, lead to luminescent layer
In exciton quenching；MoO in HML structure3Layer can remove metal electrode Al and the chemical reaction of organic film interface produces
Raw gap state, so that device be made to have more electrons and holes compound in luminescent layer.
3. a kind of novel electroluminescent device, which is characterized in that multilayered structure cathode hydridization decorative layer is added in OLEDs
HML, multilayered structure cathode hydridization decorative layer HML have three-decker, are the doping fluorination of 4,7- diphenyl -1,10- phenanthroline respectively
Lithium layer, aluminium thin layer and molybdenum trioxide thin layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110518139A (en) * | 2019-09-13 | 2019-11-29 | 桂林电子科技大学 | A kind of preparation method of the ultraviolet organic luminescent device bielectron implanted layer of inverted structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110518139A (en) * | 2019-09-13 | 2019-11-29 | 桂林电子科技大学 | A kind of preparation method of the ultraviolet organic luminescent device bielectron implanted layer of inverted structure |
| CN110518139B (en) * | 2019-09-13 | 2021-08-24 | 桂林电子科技大学 | Preparation method of double electron injection layers of ultraviolet organic light-emitting device with inverted structure |
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