CN109994536A - Tft array substrate and OLED display panel - Google Patents
Tft array substrate and OLED display panel Download PDFInfo
- Publication number
- CN109994536A CN109994536A CN201910351231.XA CN201910351231A CN109994536A CN 109994536 A CN109994536 A CN 109994536A CN 201910351231 A CN201910351231 A CN 201910351231A CN 109994536 A CN109994536 A CN 109994536A
- Authority
- CN
- China
- Prior art keywords
- electrode layer
- layer
- transparent electrode
- anode
- tft array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of tft array substrate and OLED display panel.Tft array substrate of the invention includes substrate, TFT layer, planarization layer and anode layer, substrate includes camera shooting Head Section, anode layer includes the first anode in camera shooting Head Section, the first anode includes the first bottom transparent electrode layer set gradually, first metal electrode layer and the first top transparent electrode layer, first metal electrode layer has the first part of grid-shaped structure, the first part has multiple hollow holes, first top transparent electrode layer fills multiple hollow holes, to greatly improve the penetrance of the first anode, and reduce the resistance value of the first anode, the quality of product is effectively promoted.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of tft array substrate and OLED display panels.
Background technique
Organic LED display device (Organic Light Emitting Display, OLED) has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Width is known as being the display for most having development potentiality by industry, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring
Device.
OLED according to driving method can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and
Active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. directly addressing and thin film transistor (TFT) (TFT) square
Battle array two classes of addressing.Wherein, AMOLED has the pixel in array arrangement, belongs to active display type, luminous efficacy is high, usually
As large scale display device high-definition.OLED device generally includes: substrate, is set to anode at the anode on substrate
On hole injection layer, the hole transmission layer on hole injection layer, the luminescent layer on hole transmission layer, be set to shine
Electron transfer layer on layer, the electron injecting layer on electron transfer layer and the cathode on electron injecting layer.OLED device
The principle of luminosity of part is semiconductor material and luminous organic material under electric field driven, causes to send out with compound by carrier injection
Light.Specifically, electrons and holes are injected into electron transfer layer from cathode and anode respectively and hole passes under certain voltage driving
Defeated layer, electrons and holes pass through electron transfer layer respectively and hole transmission layer moves to luminescent layer, and meet in luminescent layer, shape
At exciton and excite light emitting molecule, the latter issues visible light by radiative relaxation.
With the development of display technology, the display device using comprehensive screen design is more and more popular with consumers.It is existing
There is technology that can use the lower camera technology of screen to be promoted and shield accounting to realize screen design comprehensively, using camera technology under shielding
OLED display panel corresponds to camera and is provided with camera shooting head region, the camera shooting head region needs do not shown when using camera and
With high light transmittance, normally shown when not using camera.
Referring to Fig. 1, a kind of existing tft array substrate using the OLED display panel for shielding lower camera technology includes
Substrate 100, the planarization layer 300 on TFT layer 200, is set on planarization layer 300 TFT layer 200 on substrate 100
Anode layer 400 and the pixel defining layer 500 on anode layer 400.The substrate 100 include effective display area 110 and with
The adjacent camera shooting Head Section 120 in effective display area 110.The anode layer 400 includes the first anode in effective display area 110
410 and positioned at camera shooting Head Section 120 in second plate 420, the first anode 410 include the first tin indium oxide (ITO) layer
4101, the silver layer 4102 in the first ITO layer 4101 and the second ITO layer 4103 being set on silver-colored (Ag) layer 4102, described the
Two anode 420 is whole to be made of ITO.In order to guarantee the translucency of second plate 420, the thickness of second plate 420 generally compared with
Thin (preferably 40nm), electric conductivity it is poor (resistance value be about ITO/Ag/ITO structure electrode (thickness use 15nm/
140nm/15nm) 200 times), leading to luminescence display, there are signal delays in the process, influence 420 corresponding position of second plate
Display effect causes luminous efficiency to reduce, and since the first anode 410 is different from the film layer structure of second plate 420, processing procedure
Quantity increases, and the production cost increases.
Summary of the invention
The purpose of the present invention is to provide a kind of tft array substrates, and the penetrance for imaging anode in Head Section is high, and resistance value
Smaller, product quality is high.
Another object of the present invention is to provide a kind of OLED display panels, and the penetrance for imaging anode in Head Section is high, and
Resistance value is smaller, and product quality is high.
To achieve the above object, present invention firstly provides a kind of tft array substrates, the TFT including substrate, on substrate
Layer, the planarization layer on TFT layer and the anode layer on planarization layer；
The substrate includes camera shooting Head Section；The anode layer includes the first anode in camera shooting Head Section；Described first
Anode includes the first bottom transparent electrode layer on planarization layer, the first metal electrode on the first bottom transparent electrode layer
Layer and the first top transparent electrode layer on the first metal electrode layer and the first bottom transparent electrode layer；The first metal electricity
Pole layer includes the first part of grid-shaped structure, which has multiple hollow holes, first top transparent electrode layer
Fill multiple hollow holes.
The thickness of first top transparent electrode layer is uniform.
It is described first top transparent electrode layer with a thickness of 15~60nm；First metal electrode layer with a thickness of 30~
80nm；First bottom transparent electrode layer with a thickness of 5~10nm.
First top transparent electrode layer is located at the thickness of the part on the first metal electrode layer less than the first transparent electricity in top
Pole layer is located at the thickness of the part on the first bottom transparent electrode layer.
First top transparent electrode layer is located at pushing up with a thickness of 7~15nm, first for the part on the first metal electrode layer
Transparent electrode layer be located at the part on the first bottom transparent electrode layer with a thickness of 15~60nm.
The material of first bottom transparent electrode layer is tin indium oxide, and the material of first metal electrode layer is silver, institute
The material for stating the first top transparent electrode layer is tin indium oxide.
The substrate further includes the effective display area adjacent with camera shooting Head Section；The anode layer further includes being located at effectively display
Second plate in area；
The second plate includes the second bottom transparent electrode layer being set on planarization layer, is set to the second bottom transparent electrode layer
On the second metal electrode layer and on the second metal electrode layer second top transparent electrode layer；Second metal electrode layer
For whole face structure.
It is described second top transparent electrode layer with a thickness of 15~60nm；Second metal electrode layer with a thickness of 30~
80nm；Second bottom transparent electrode layer with a thickness of 5~10nm；
The material of second bottom transparent electrode layer is tin indium oxide, and the material of second metal electrode layer is silver, institute
The material for stating the second top transparent electrode layer is tin indium oxide.
The grid line width of the first part is 2~8 μm.
The tft array substrate further includes the pixel defining layer on planarization layer and anode layer；The pixel definition
Layer is equipped with corresponding the first opening being located above first part.
The hollow out rate of the first part is 50%~70%.
The present invention also provides a kind of OLED display panels, including above-mentioned tft array substrate.
Beneficial effects of the present invention: tft array substrate of the invention includes substrate, TFT layer, planarization layer and anode layer,
Substrate includes camera shooting Head Section, and anode layer includes the first anode in camera shooting Head Section, and the first anode includes the set gradually
One bottom transparent electrode layer, the first metal electrode layer and the first top transparent electrode layer, the first metal electrode layer includes grid-shaped knot
The first part of structure, the first part have multiple hollow holes, and first top transparent electrode layer fills multiple hollow holes, thus
The penetrance of the first anode is greatly improved, and reduces the resistance value of the first anode, the quality of product is effectively promoted.
The penetrance of anode is high in the camera shooting Head Section of OLED display panel of the invention, and resistance value is smaller, and product quality is high.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is that a kind of section view of existing tft array substrate using the OLED display panel for shielding lower camera technology is shown
It is intended to；
Fig. 2 is the schematic cross-sectional view of the first embodiment of tft array substrate of the invention；
Fig. 3 is the schematic top plan view of first part in the first metal electrode layer of tft array substrate of the invention；
Fig. 4 is the partial sectional view of the first anode of the first embodiment of tft array substrate of the invention；
Fig. 5 is the schematic cross-sectional view of the second embodiment of tft array substrate of the invention；
Fig. 6 is the partial sectional view of the first anode of the second embodiment of tft array substrate of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 2, the tft array substrate of the first embodiment of the present invention includes substrate 10, the TFT on substrate 10
Layer 20, the planarization layer 30 on TFT layer 20 and the anode layer 40 on planarization layer 30.
The substrate 10 includes camera shooting Head Section 11.The anode layer 40 includes the first anode in camera shooting Head Section 11
41.The first anode 41 includes the first bottom transparent electrode layer 411 being set on planarization layer 30, is set to the first bottom transparent electrode
Layer 411 on the first metal electrode layer 412 and on the first metal electrode layer 412 and the first bottom transparent electrode layer 411
First top transparent electrode layer 413.The first part A of first metal electrode layer 412 including grid-shaped structure, this first
Divide A that there are multiple hollow hole V, first top transparent electrode layer 413 fills multiple hollow hole V.
Specifically, incorporated by reference to Fig. 2 and Fig. 4, in the first embodiment of the present invention, first top transparent electrode layer 413
Thickness it is uniform, in order to reduce the first anode 41 in the region hollow hole V and the region hollow hole V between exterior domain
Difference is shown caused by current density difference, in the first embodiment of the present invention, the thickness of first top transparent electrode layer 413
Degree is 15~60nm, first metal electrode layer 412 with a thickness of 30~80nm, first bottom transparent electrode layer 411
With a thickness of 5~10nm, to reduce the fine difference of electric conductivity in small area.
Specifically, the material of first bottom transparent electrode layer 411 is tin indium oxide, first metal electrode layer 412
Material be silver, it is described first top transparent electrode layer 413 material be tin indium oxide.
Specifically, the substrate 10 further includes the effective display area 12 adjacent with camera shooting Head Section 11.The anode layer 40 is also
Including the second plate 42 being located in effective display area 12.The second plate 42 includes the second bottom on planarization layer 30
Transparent electrode layer 421, the second metal electrode layer 422 on the second bottom transparent electrode layer 421 and be set to the second metal electrode
The second top transparent electrode layer 423 on layer 422.Second metal electrode layer 422 is whole face structure.
Further, it is described second top transparent electrode layer 423 with a thickness of 15~60nm.Second metal electrode layer
422 with a thickness of 30~80nm.Second bottom transparent electrode layer 421 with a thickness of 5~10nm.Second bottom transparent electrode
The material of layer 421 is tin indium oxide, and the material of second metal electrode layer 422 is silver, second top transparent electrode layer 423
Material be tin indium oxide.
Preferably, the grid line width of the first part A is 2~8 μm.
Specifically, the tft array substrate further includes the pixel defining layer 50 on planarization layer 30 and anode layer 40.
The pixel defining layer 50, which is equipped with corresponding the first opening 51 being located above first part A and corresponds to, is located at 42 top of second plate
The second opening 52, when the later use tft array substrate makes OLED display panel, first part A and OLED device
Luminous zone is corresponding.
Preferably, the hollow out rate of the first part A is the region 50%~70% namely multiple hollow hole V area
It is the 50%~70% of the edge first part A institute's envelope surface product.
Specifically, referring to Fig. 3, in the preferred embodiment of the present invention, the first part A include outline border A1 and
Multiple diamond A2, multiple first stripes A3, multiple second stripes A4, multiple third stripes on the inside of outline border A1
A5 and multiple Article 4 shapes portion A6.The multiple diamond A2 arranges in array.With any two phase in a line diamond A2
Adjacent diamond A2 has opposite apex angle and opposite apex angle is through one first stripes A3 connection, in same row diamond A2 times
Two adjacent diamond A2 that anticipate have opposite apex angle and opposite apex angle is through one second stripes A4 connection.Multiple diamonds
In A2, its in the apex angle of outermost diamond A2 other than the apex angle being connect with the first stripes A3 and the second stripes A4
He connect through multiple third stripes A5 with outline border A1 apex angle respectively.In the adjacent diamond A2 of any four, have opposite
The opposite one Article 4 shape portion A6 connection of side of two diamond A2 of side.In the preferred embodiment, by outline border A1,
Multiple diamond A2, multiple first stripes A3, multiple second stripes A4, multiple third stripes A5 and multiple Article 4 shapes
Portion A6 crosses multiple hollow hole V.Certainly, in other embodiments of the invention, other forms can also be used in first part A
Fenestral fabric with multiple hollow hole V, will not influence realization of the invention.
Specifically, the substrate 10 is flexible substrate, and the first fexible film 101, first including being cascading is slow
Layer 102, the second fexible film 103 and second buffer layer 104 are rushed, the TFT layer 20 is set in second buffer layer 104, and first is soft
Property film 101 and the second fexible film 103 material be polyimides (PI).
Specifically, the TFT layer 20 include in the second buffer layer 104 and be located in camera shooting Head Section 11 it is first active
Layer 211, is set to second buffer layer at the second active layer 212 in second buffer layer 104 and in effective display area 12
104, the first active layer 211 and first grid insulating layer 22 on the second active layer 212, be set on first grid insulating layer 22 and
The first bottom-gate 231 above the first active layer 211 is set on first grid insulating layer 22 and is located at the second active layer
212 top the second bottom-gate 232, in first grid insulating layer 22, the first bottom-gate 231 and the second bottom-gate 232
Second grid insulating layer 24, the first top-gated pole on second grid insulating layer 24 and above the first bottom-gate 231
251, on second grid insulating layer 24 and be located above the second bottom-gate 232 the second top-gated pole 252, set on second grid
Insulating layer 24, the first top-gated pole 251 and interlayer insulating film 26 on the second top-gated pole 252 are set on interlayer insulating film 26 and position
In the first source electrode 271 and the first drain electrode 272 in camera shooting Head Section 11 and it is set on interlayer insulating film 26 and is located at effectively display
The second source electrode 273 and the second drain electrode 274 in area 12.Interlayer insulating film 26, second grid insulating layer 24 and first grid insulation
It is set above the both ends of corresponding first active layer 211 of layer 22 there are two the first via hole 261, first source electrode 271 and first drains
272 two end in contact respectively through two the first via holes 261 and the first active layer 211, interlayer insulating film 26, second grid insulating layer
24 and corresponding second active layer 212 of first grid insulating layer 22 both ends above set that there are two the second via hole 262, second sources
Two end in contact of pole 273 and the second drain electrode 274 respectively through two the second via holes 262 and the second active layer 212.The planarization layer
A top in 30 corresponding first source electrodes 271 and the first drain electrode 272 is equipped with third via hole 31, and the first anode 41 is through third via hole
31 contact with one in the first source electrode 271 and the first drain electrode 272.Corresponding second source electrode 273 and second of the planarization layer 30
A top in drain electrode 274 is equipped with the 4th via hole 32, and second plate 42 is through the 4th via hole 32 and the second source electrode 273 and the second leakage
A contact in pole 274.
Specifically, the tft array substrate further includes the spacer material (PS) 60 in pixel defining layer 50.
Incorporated by reference to Fig. 5 and Fig. 6, the difference of the tft array substrate of the second embodiment of the present invention and above-mentioned first embodiment
It is, it is close with the electric current between exterior domain in the region hollow hole V and the region hollow hole V in order to reduce the first anode 41
It spends and shows difference caused by difference, the first top of setting transparent electrode layer 413 is located at the thickness of the part on the first metal electrode layer 412
It spends and is located at the thickness of the part on the first bottom transparent electrode layer 411 less than the first top transparent electrode layer 413, specially described the
One metal electrode layer 412 with a thickness of 30~80nm and the base with a thickness of 5~10nm of first bottom transparent electrode layer 411
On plinth, first top transparent electrode layer 413 be located at the part on the first metal electrode layer 412 with a thickness of 7~15nm, first
Top transparent electrode layer 413 be located at the part on the first bottom transparent electrode layer 411 with a thickness of 15~60nm, to reduce cell
The fine difference of electric conductivity within the scope of domain, remaining is identical with the first embodiment, and details are not described herein.
It should be noted that the first anode 41 in tft array substrate setting camera shooting Head Section 11 of the invention includes successively
The first bottom transparent electrode layer 411, the first metal electrode layer 412 and the first top transparent electrode layer 413 being arranged, and it is arranged first
Metal electrode layer 412 includes the first part A of grid-shaped structure, and first part A has multiple hollow hole V, and the first top is saturating
Prescribed electrode layer 413 fills multiple hollow hole V, due to the grid-shaped structure of first part A and has multiple hollow hole V, so that the
The penetrance with higher of one metal electrode layer 412, so that the whole penetrance with higher of the first anode 41, convenient for screen
The realization of lower camera technology, simultaneously because the first anode 41 adds the knot of one layer of metal electrode layer using two layers of transparent electrode layer
Structure, the whole resistance value of the first anode 41 is smaller, avoid the resistance value of the first anode 41 excessive in OLED display panel with the
Luminous efficiency caused by the display effect of one anode, 41 corresponding position has an impact reduces, and the quality of product is effectively promoted.
Based on the same inventive concept, the present invention also provides a kind of OLED display panel, including above-mentioned tft array substrate,
Repeated description no longer is carried out to the structure of tft array substrate herein.Other than above-mentioned tft array substrate, the OLED is shown
Panel further includes the luminescent layer in the first opening 51 and the second opening 52 and the cathode on luminescent layer to form OLED
Device.
It should be noted that the first anode 41 in OLED display panel setting camera shooting Head Section 11 of the invention includes successively
The first bottom transparent electrode layer 411, the first metal electrode layer 412 and the first top transparent electrode layer 413 being arranged, and it is arranged first
Metal electrode layer 412 includes the first part A of grid-shaped structure, and first part A has multiple hollow hole V, and the first top is saturating
Prescribed electrode layer 413 fills multiple hollow hole V, due to the grid-shaped structure of first part A and has multiple hollow hole V, so that the
The penetrance with higher of one metal electrode layer 412, so that the whole penetrance with higher of the first anode 41, convenient for screen
The realization of lower camera technology, simultaneously because the first anode 41 adds the knot of one layer of metal electrode layer using two layers of transparent electrode layer
Structure, the whole resistance value of the first anode 41 is smaller, avoid the resistance value of the first anode 41 excessive in OLED display panel with the
Luminous efficiency caused by the display effect of one anode, 41 corresponding position has an impact reduces, and the quality of product is effectively promoted.
In conclusion tft array substrate of the invention includes substrate, TFT layer, planarization layer and anode layer, substrate includes
Head Section is imaged, anode layer includes the first anode in camera shooting Head Section, which includes that the first bottom for setting gradually is saturating
Prescribed electrode layer, the first metal electrode layer and the first top transparent electrode layer, the first metal electrode layer include the of grid-shaped structure
A part, the first part have multiple hollow holes, and first top transparent electrode layer fills multiple hollow holes, to mention significantly
The penetrance of the first anode has been risen, and has reduced the resistance value of the first anode, the quality of product is effectively promoted.The present invention
OLED display panel camera shooting Head Section in anode penetrance it is high, and resistance value is smaller, and product quality is high.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (12)
1. a kind of tft array substrate, which is characterized in that including substrate (10), the TFT layer (20) being set on substrate (10), be set to
Planarization layer (30) on TFT layer (20) and the anode layer (40) on planarization layer (30)；
The substrate (10) includes camera shooting Head Section (11)；The anode layer (40) includes the first sun in camera shooting Head Section (11)
Pole (41)；The first anode (41) includes the first bottom transparent electrode layer (411) being set on planarization layer (30), is set to first
The first metal electrode layer (412) on bottom transparent electrode layer (411) and it is set to the first metal electrode layer (412) and the first bottom is saturating
The first top transparent electrode layer (413) on prescribed electrode layer (411)；First metal electrode layer (412) includes grid-shaped knot
The first part (A) of structure, the first part (A) have multiple hollow holes (V), first top transparent electrode layer (413) filling
Multiple hollow holes (V).
2. tft array substrate as described in claim 1, which is characterized in that the thickness on first top transparent electrode layer (413)
Uniformly.
3. tft array substrate as claimed in claim 2, which is characterized in that the thickness on first top transparent electrode layer (413)
For 15~60nm；First metal electrode layer (412) with a thickness of 30~80nm；First bottom transparent electrode layer (411)
With a thickness of 5~10nm.
4. tft array substrate as described in claim 1, which is characterized in that first top transparent electrode layer (413) is located at the
The thickness of part on one metal electrode layer (412) is located at the first bottom transparent electrode layer less than the first top transparent electrode layer (413)
(411) thickness of the part on.
5. tft array substrate as claimed in claim 4, which is characterized in that first top transparent electrode layer (413) is located at the
Part on one metal electrode layer (412) with a thickness of 7~15nm, it is transparent that the first top transparent electrode layer (413) is located at the first bottom
Part on electrode layer (411) with a thickness of 15~60nm.
6. tft array substrate as described in claim 1, which is characterized in that the material of first bottom transparent electrode layer (411)
For tin indium oxide, the material of first metal electrode layer (412) is silver, the material on first top transparent electrode layer (413)
For tin indium oxide.
7. tft array substrate as described in claim 1, which is characterized in that the substrate (10) further includes and images Head Section
(11) adjacent effective display area (12)；The anode layer (40) further includes the second plate in effective display area (12)
(42)；
The second plate (42) includes the second bottom transparent electrode layer (421) being set on planarization layer (30), is set to the second bottom
The second metal electrode layer (422) on transparent electrode layer (421) and the second top on the second metal electrode layer (422) are transparent
Electrode layer (423)；Second metal electrode layer (422) is whole face structure.
8. tft array substrate as claimed in claim 7, which is characterized in that the thickness on second top transparent electrode layer (423)
For 15~60nm；Second metal electrode layer (422) with a thickness of 30~80nm；Second bottom transparent electrode layer (421)
With a thickness of 5~10nm；
The material of second bottom transparent electrode layer (421) is tin indium oxide, and the material of second metal electrode layer (422) is
The material of silver, second top transparent electrode layer (423) is tin indium oxide.
9. tft array substrate as described in claim 1, which is characterized in that the grid line width of the first part (A) is 2~8
μm。
10. tft array substrate as described in claim 1, which is characterized in that further include being set to planarization layer (30) and anode layer
(40) pixel defining layer (50) on；The pixel defining layer (50) is equipped with corresponding first be located above first part (A) and opens
Mouth (51).
11. tft array substrate as described in claim 1, which is characterized in that the hollow out rate of the first part (A) is 50%
~70%.
12. a kind of OLED display panel, which is characterized in that including tft array base such as of any of claims 1-11
Plate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910351231.XA CN109994536A (en) | 2019-04-28 | 2019-04-28 | Tft array substrate and OLED display panel |
| PCT/CN2019/094536 WO2020220463A1 (en) | 2019-04-28 | 2019-07-03 | Tft array substrate and oled display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910351231.XA CN109994536A (en) | 2019-04-28 | 2019-04-28 | Tft array substrate and OLED display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109994536A true CN109994536A (en) | 2019-07-09 |
Family
ID=67135402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910351231.XA Pending CN109994536A (en) | 2019-04-28 | 2019-04-28 | Tft array substrate and OLED display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109994536A (en) |
| WO (1) | WO2020220463A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571247A (en) * | 2019-08-15 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110853497A (en) * | 2019-10-25 | 2020-02-28 | 武汉华星光电半导体显示技术有限公司 | Display panel and terminal device thereof |
| CN111129088A (en) * | 2019-12-17 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display device |
| CN111162199A (en) * | 2020-01-02 | 2020-05-15 | 昆山国显光电有限公司 | Display panel and display device |
| CN111755613A (en) * | 2020-06-16 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN112271195A (en) * | 2020-10-22 | 2021-01-26 | Oppo广东移动通信有限公司 | Light-emitting element, preparation method thereof, display screen and electronic device |
| WO2021017322A1 (en) * | 2019-07-30 | 2021-02-04 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display panel and manufacturing method therefor |
| WO2021046982A1 (en) * | 2019-09-10 | 2021-03-18 | 武汉华星光电半导体显示技术有限公司 | Display panel, electronic apparatus and method for operating electronic apparatus |
| WO2021155627A1 (en) * | 2020-02-07 | 2021-08-12 | 武汉华星光电半导体显示技术有限公司 | Oled display device |
| CN113327961A (en) * | 2021-05-21 | 2021-08-31 | 武汉华星光电技术有限公司 | OLED display panel, preparation method thereof and OLED display device |
| WO2021176519A1 (en) * | 2020-03-02 | 2021-09-10 | シャープ株式会社 | Display device and production method therefor |
| CN113488511A (en) * | 2021-06-22 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Array substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240118420A (en) * | 2023-01-27 | 2024-08-05 | 엘지디스플레이 주식회사 | Display device and display panel |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692186B2 (en) * | 2002-01-24 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| CN101783395A (en) * | 2009-01-20 | 2010-07-21 | 京东方科技集团股份有限公司 | Organic electroluminescence component and manufacturing method thereof |
| CN103579436A (en) * | 2012-07-18 | 2014-02-12 | 广东量晶光电科技有限公司 | Semiconductor light emitting structure and manufacturing method thereof |
| US20140191202A1 (en) * | 2013-01-04 | 2014-07-10 | Lg Display Co., Ltd. | Oled micro-cavity structure and method of making |
| US20170012147A1 (en) * | 2015-07-06 | 2017-01-12 | Electronics And Telecommunications Research Institute | Method for manufacturing transparent electrode |
| US20170263883A1 (en) * | 2015-09-22 | 2017-09-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Organic Light Emitting Diode Device and Array Substrate |
| CN107359268A (en) * | 2017-06-15 | 2017-11-17 | 武汉华星光电半导体显示技术有限公司 | Transparent OLED display panel and preparation method thereof |
| CN108389879A (en) * | 2017-09-30 | 2018-08-10 | 云谷（固安）科技有限公司 | Display screen and electronic equipment |
| CN109256396A (en) * | 2018-09-04 | 2019-01-22 | 京东方科技集团股份有限公司 | A kind of translucent display substrate and transparent display panel |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4378186B2 (en) * | 2004-02-06 | 2009-12-02 | キヤノン株式会社 | Organic EL element array |
| JP3915810B2 (en) * | 2004-02-26 | 2007-05-16 | セイコーエプソン株式会社 | ORGANIC ELECTROLUMINESCENCE DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| US7737464B2 (en) * | 2006-11-10 | 2010-06-15 | Canon Kabushiki Kaisha | Organic light emitting apparatus |
| KR20140020565A (en) * | 2012-08-09 | 2014-02-19 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus |
| CN107622749B (en) * | 2017-09-08 | 2019-10-01 | 上海天马有机发光显示技术有限公司 | A kind of display panel, electroluminescence display panel and display device |
-
2019
- 2019-04-28 CN CN201910351231.XA patent/CN109994536A/en active Pending
- 2019-07-03 WO PCT/CN2019/094536 patent/WO2020220463A1/en active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692186B2 (en) * | 2002-01-24 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| CN101783395A (en) * | 2009-01-20 | 2010-07-21 | 京东方科技集团股份有限公司 | Organic electroluminescence component and manufacturing method thereof |
| CN103579436A (en) * | 2012-07-18 | 2014-02-12 | 广东量晶光电科技有限公司 | Semiconductor light emitting structure and manufacturing method thereof |
| US20140191202A1 (en) * | 2013-01-04 | 2014-07-10 | Lg Display Co., Ltd. | Oled micro-cavity structure and method of making |
| US20170012147A1 (en) * | 2015-07-06 | 2017-01-12 | Electronics And Telecommunications Research Institute | Method for manufacturing transparent electrode |
| US20170263883A1 (en) * | 2015-09-22 | 2017-09-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Organic Light Emitting Diode Device and Array Substrate |
| CN107359268A (en) * | 2017-06-15 | 2017-11-17 | 武汉华星光电半导体显示技术有限公司 | Transparent OLED display panel and preparation method thereof |
| CN108389879A (en) * | 2017-09-30 | 2018-08-10 | 云谷（固安）科技有限公司 | Display screen and electronic equipment |
| CN109256396A (en) * | 2018-09-04 | 2019-01-22 | 京东方科技集团股份有限公司 | A kind of translucent display substrate and transparent display panel |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021017322A1 (en) * | 2019-07-30 | 2021-02-04 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display panel and manufacturing method therefor |
| CN110571247B (en) * | 2019-08-15 | 2021-09-03 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2021027060A1 (en) * | 2019-08-15 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| US11374075B2 (en) | 2019-08-15 | 2022-06-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Bendable display panel and bendable display device provided with through groove in bending display region |
| CN110571247A (en) * | 2019-08-15 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2021046982A1 (en) * | 2019-09-10 | 2021-03-18 | 武汉华星光电半导体显示技术有限公司 | Display panel, electronic apparatus and method for operating electronic apparatus |
| WO2021077606A1 (en) * | 2019-10-25 | 2021-04-29 | 武汉华星光电半导体显示技术有限公司 | Display panel and terminal apparatus used therefor |
| CN110853497A (en) * | 2019-10-25 | 2020-02-28 | 武汉华星光电半导体显示技术有限公司 | Display panel and terminal device thereof |
| CN111129088A (en) * | 2019-12-17 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display device |
| WO2021120428A1 (en) * | 2019-12-17 | 2021-06-24 | 武汉华星光电半导体显示技术有限公司 | Organic light-emitting diode display device |
| CN111162199A (en) * | 2020-01-02 | 2020-05-15 | 昆山国显光电有限公司 | Display panel and display device |
| WO2021135784A1 (en) * | 2020-01-02 | 2021-07-08 | 昆山国显光电有限公司 | Display panel and display apparatus |
| WO2021155627A1 (en) * | 2020-02-07 | 2021-08-12 | 武汉华星光电半导体显示技术有限公司 | Oled display device |
| WO2021176519A1 (en) * | 2020-03-02 | 2021-09-10 | シャープ株式会社 | Display device and production method therefor |
| CN111755613A (en) * | 2020-06-16 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN112271195A (en) * | 2020-10-22 | 2021-01-26 | Oppo广东移动通信有限公司 | Light-emitting element, preparation method thereof, display screen and electronic device |
| WO2022083279A1 (en) * | 2020-10-22 | 2022-04-28 | Oppo广东移动通信有限公司 | Light-emitting element and manufacturing method therefor, display screen, and electronic device |
| CN113327961A (en) * | 2021-05-21 | 2021-08-31 | 武汉华星光电技术有限公司 | OLED display panel, preparation method thereof and OLED display device |
| CN113488511A (en) * | 2021-06-22 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Array substrate |
| CN113488511B (en) * | 2021-06-22 | 2022-10-04 | 深圳市华星光电半导体显示技术有限公司 | Array substrate |
| US12114546B2 (en) | 2021-06-22 | 2024-10-08 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate including connection layer and display panel having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020220463A1 (en) | 2020-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109994536A (en) | Tft array substrate and OLED display panel | |
| US11043541B2 (en) | OLED display device | |
| CN106654047B (en) | OLED display panel and preparation method thereof | |
| CN106206673B (en) | AMOLED display device | |
| CN109994534A (en) | The peripheral circuit structure and OLED display panel of OLED display panel | |
| TWI443823B (en) | Organic electroluminescent display device and method of fabricating the same | |
| CN105810852B (en) | A kind of production method of organic light emitting display panel | |
| CN104752476B (en) | Organic light-emitting display device and its manufacturing method | |
| US11165038B2 (en) | Display module and electronic device with auxiliary electrode layer on cathode layer | |
| CN109616497A (en) | OLED display panel | |
| US11296181B2 (en) | Display panel packaging method | |
| CN108183121A (en) | Flexible display panels and preparation method thereof | |
| CN109448635A (en) | OLED display panel | |
| US20170263883A1 (en) | Organic Light Emitting Diode Device and Array Substrate | |
| KR20110056897A (en) | Organic electro-luminescence device | |
| CN110137365A (en) | The production method and OLED display panel of OLED display panel | |
| CN203644785U (en) | OLED (Organic Light Emitting Diode) display device | |
| CN107565040A (en) | Oled substrate and preparation method thereof | |
| CN107342045A (en) | AMOLED display panels and display device | |
| CN109817669A (en) | A kind of organic light emitting diode display | |
| CN109903723A (en) | Special-shaped display device | |
| CN108615820A (en) | OLED display | |
| CN109616505A (en) | OLED display and preparation method thereof | |
| CN107768420A (en) | A kind of display device | |
| KR102315749B1 (en) | Method for manufacturing an OLED substrate and method for manufacturing an OLED display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190709 |
|
| RJ01 | Rejection of invention patent application after publication |