CN109989077A - A kind of copper electrolyte - Google Patents
A kind of copper electrolyte Download PDFInfo
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- CN109989077A CN109989077A CN201711483591.2A CN201711483591A CN109989077A CN 109989077 A CN109989077 A CN 109989077A CN 201711483591 A CN201711483591 A CN 201711483591A CN 109989077 A CN109989077 A CN 109989077A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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Abstract
The invention discloses a kind of copper electrolytes, contain leveling agent, copper ion source, electrolyte and halogen ion source, polymer of the leveling agent number average molecular weight distribution as made of one or more nitrogen-containing heterocycle compounds, two kinds or more of multi-epoxy compounds and the reaction of one or more polyamine compounds in 500-20000 in the copper electrolyte；Electro-coppering is carried out using leveling agent of the invention, can be obtained with high thickness to diameter ratio
Description
Technical field:
The present invention relates to field of electroplating, and in particular to a kind of copper electrolyte.
Background technique:
Currently, with the function increase of electronic equipment and being constantly progressive for property easy to carry, used in electronic equipment
Circuit substrate tends to miniaturization.Typically, circuit substrate generally comprises printed wiring board and semiconductor wafer.In order to realize base
The interconnection and interflow of intralamellar part circuit, multi-layer board are an optinal plans.Such substrate realizes above-mentioned purpose by through-hole, but logical
Normal this multi-layer board has high radius-thickness ratioThat is the ratio of plate thickness and through-hole diameter, for example, radius-thickness ratio reaches 10:1,
Even 20:1.This class formation increases copper-plated difficulty on substrate, reduces copper facing uniformity, that is, covering power (Throwing in hole
Power, Tp value).Covering power is defined as the copper deposition thickness of through hole center and the ratio of its surface thickness.
In addition, the connection of circuit can also realize that such technology mainly passes through by high-density interconnection technology between multi-layer board
Blind hole connects to realize, the filling of blind hole will realize that filling maximizes, while the copper deposit thickness change of entire substrate surface
It minimizes.Proportional, the hole depth diameter in the difficulty of such blind hole depositing homogeneous layers of copper and the hole depth and diameter ratio of blind hole
Than bigger, the difficulty for depositing smooth layers of copper is also bigger.Blind hole electroplating effect is generally stated with Dimple value.Dimple value refers to
Recess value after blind hole plating, toward lower recess, then Dimple value is positive for blind hole coating center after copper facing, if in coating
Cardiac prominence goes out copper face, and then Dimple value is negative.
In the field of electroplating of circuit board, technical staff is both known about: in the plating process, the voltage drop of substrate surface can edge
The surface with irregular shape change, and make metal deposit uneven, the negative potential of bumps is high, concave point
Negative potential is lower, and the negative potential of orifice angle can be very high, the entire copper deposit thickness of Yao Shixian substrate surface (including internal surface of hole)
Variation is minimum, is a kind of stern challenge.
Summary of the invention:
The object of the present invention is to provide a kind of copper electrolytes, can be in the base with high thickness to diameter ratio through-hole and high density interconnection blind hole
Uniform, smooth layers of copper is obtained on plate, especially reaching 15 or more through-hole and high density interconnection blind hole to radius-thickness ratio has preferably
Plating ability.
The present invention is achieved by the following technical programs:
A kind of copper electrolyte exists containing leveling agent, copper ion source, electrolyte and halogen ion source, feature in the copper electrolyte
In, the leveling agent by one or more nitrogen-containing heterocycle compounds, two kinds or more of multi-epoxy compounds and one or more
Polymer of the number average molecular weight distribution made of polyamine compounds reaction in 500-20000.
The nitrogen-containing heterocycle compound refers to, can be with containing the organic ring compound of at least one nitrogen-atoms on ring
It is aromatics or non-aromatic, can have the one or more substituent groups being connected on ring, it is preferable that the nitrogen-containing heterocycle compound
On imidazoles, benzimidazole, piperidines, pyrroles, pyrazoles, triazole, tetrazolium, pyrimidine, pyridine, pyrazine, pyrrolidines or its carbon atom
The derivative that is substituted with a substituent of hydrogen.
It is further preferred that the substituent group of the nitrogen-containing heterocycle compound derivative is selected from C1~C4 alkyl, C2~C4 alkene
Base, phenyl and polycyclic aromatic base, chlorphenyl, C5~C8 cycloalkenyl, C5~C8 saturated cyclic alkyls, C1~C2 hydroxyalkyl, C2~C5
Alkoxy.
The multi-epoxy compounds refer to there is the organic compound of 2 or multiple epoxy groups in the structure.It is preferred that
Ground, in carrying out the present invention, two kinds or more of at least one of the multi-epoxy compounds are bicyclic oxygen compounds.
Preferably, the leveling agent is by nitrogen-containing heterocycle compound, polyamine compounds, multi-epoxy compounds and bicyclic oxygen
Polymer made of compound reaction, and nitrogen-containing heterocycle compound, polyamine compounds, multi-epoxy compounds, bicyclic oxygen
The molar ratio of compound be 1:0.002~7:0.01~1:0.1~8, preferably 1:0.01~4:0.04~0.46:0.58~
3.7。
It is further preferred that the bicyclic oxygen compound is C2~C12 alkyl diol diglycidyl ether or poly- second two
Alcohol diglycidyl ether.
It is further preferred that C2~C12 alkyl diol diglycidyl ether be selected from ethylene glycol diglycidylether,
1,3- propylene glycol diglycidylether, 1,4- butanediol diglycidyl ether, 1,5- neopentyl glycol diglycidyl glycerin ether, 1,6- oneself two
Alcohol diglycidyl ether.
Preferably, I compound represented of formula is also contained in described two kinds or more of multi-epoxy compounds:
Wherein, R1、R3The separately alkyl selected from hydrogen atom or C1~C8, R2Selected from hydrogen atom, methyl, ethyl, Z
Represent singly-bound or the carbochain of C1-C4, the integer that n is 1~4.
The polyamine compounds refer to there is the organic compound of 2 or multiple amidos in structure.Amido can be substituted.
In carrying out the present invention, the preferably described polyamine compounds are selected from II, III, IV compound represented of formula:
Wherein, R4~R7The separately alkyl selected from hydrogen, C1~C4, nitro, formoxyl, acetyl group, phenyl, sulphonyl
Base, methoxyl group, ethyoxyl, any one of chloroethoxy, and R8For the alkyl of C1~C8；
Wherein R9~R13The separately alkyl selected from hydrogen, C1-C4, nitro, formoxyl, acetyl group, phenyl, sulphonyl
Base, methoxyl group, ethyoxyl, chloroethoxy, and R14、R15Separately it is selected from the alkyl of C1~C8, the integer that m is 1~4；
Wherein, R16~R21It is separately selected from hydrogen, the alkyl of C1~C4, formoxyl, acetyl group, phenyl or sulfonyl,
And R22~R24Separately be selected from is C1~C5 alkyl, the integer that m is 1~4.
The preparation method of the leveling agent the following steps are included:
By nitrogen-containing heterocycle compound, polyamine compounds and one of multi-epoxy compounds are dissolved in water or organic solvent obtains
To solution, it is stirred to react 0.5-2 hours at 60-80 DEG C, adds another multi-epoxy compounds, 60-75 DEG C is stirred to react
0.5-2 hours, then rise to 90 DEG C and be stirred to react 15-20 hours, it is cooled to room temperature after reaction, is adjusted to pH=1- with 50wt% sulfuric acid
3, obtain leveling agent.
Preferably, the content of leveling agent is 0.5~500ppm in the copper electrolyte.
Particularly, the copper ion source is selected from cupric sulfate pentahydrate, and electrolyte is selected from sulfuric acid, and halogen ion source is selected from hydrochloric acid.
Preferably, when in copper electrolyte contain 30~150g/L cupric sulfate pentahydrate, 200~300g/L sulfuric acid and 40~80ppm
Chloride ion can well plating have high thickness to diameter ratio through-hole substrate.
Preferably, when in copper electrolyte contain 200~300g/L cupric sulfate pentahydrate, 10~150g/L sulfuric acid and 40~80ppm
Chloride ion can plating high density interconnection blind hole well substrate.
It is further preferred that also there is sulfonic acid group less than 1000 containing accelerator such as number-average molecular weight in copper electrolyte
The butyl polyoxyethylene poly-oxygen propylene aether (EO/PO) of disulphide and inhibitor such as number-average molecular weight less than 20000 or
(and) polyoxyethylene ether (PEO).
In copper electrolyte provided by the invention other than containing leveling agent of the invention, it can also contain outside the present invention in addition
A kind of leveling agent, or can be any other conventional planarization agent, such as leveling agent disclosed in CN 105002527B.
The present invention also provides a kind of copper electroplating methods, and substrate to be electroplated is electroplated using above-mentioned copper electrolyte.
The substrate includes being selected from one of through-hole, groove, blind hole or various structures.
Beneficial effects of the present invention are as follows:
Electro-coppering of the present invention, can obtain with high thickness to diameter ratio (h/ φ) through-hole aperture, in hole and substrate surface, or
Person's substrate surface and high density interconnection blind hole inner thickness are uniform, and the smooth layers of copper in surface, copper electroplating liquid of the present invention has
Good covering power and covering power, especially reaching 15 or more through-hole and high density interconnection blind hole to radius-thickness ratio has preferably
Plating ability.
Specific embodiment:
" leveling agent ", which refers to, is capable of providing substantially horizontal or planar metal layer organic compound or its salt, such as this
Polymer in invention." inhibitor " refers to the additive for inhibiting metal deposition rate in the plating process." accelerator " refers to
Promote the additive of metal deposition rate in the plating process.
It is to further explanation of the invention, rather than limiting the invention below.
Experimental method in following embodiments is unless otherwise specified conventional method.Original as used in the following examples
Material, reagent material etc. are commercially available products unless otherwise specified.
For through-hole substrate or the electro-coppering base soln, electro-plating method and the electroplating effect that are electroplated with blind hole substrate
Test method difference is as described below:
1. through-hole substrate:
(1) electro-coppering base soln: preparing enough 60g/L containing cupric sulfate pentahydrate, sulfuric acid 220g/L, chloride ion 60ppm's
Base soln A, it is spare.
(2) electro-plating method: equipped with copper plating bath with air stirrer and with the 1.5L Haring cell of soluble anode
In, it is put into the test board that radius-thickness ratio (h/ Φ) is 15, is electroplated 2 hours under 10ASF current density.
(3) electroplating effect test method: pass through the smoothness of naked-eye observation plate face after electroplating experiments, if having copper particle
Or copper wire, that is, node and the number for estimating them；With microtomy measurement covering power Tp value (using 6 methods)；According to industrial standard
Method IPC-TM-650-2.6.8 (in May, 2004 revised edition E) carries out thermal stress measurement, and whether observation coating has crack.
2. blind hole substrate:
(1) electro-coppering base soln: preparing enough 225g/L containing cupric sulfate pentahydrate, sulfuric acid 60g/L, chloride ion 60ppm's
Base soln B, it is spare.
(2) electro-plating method: equipped with copper plating bath with air stirrer and with the 1.5L Haring cell of insoluble anode
In, being put into the specification after copper-coating is hole depth/diameter=100 μm/100 μm blind hole dual platen, close in 15ASF electric current
Degree lower plating 60 minutes.
(3) plate face situation is equally with the naked eye observed after electroplating experiments, measures plating plate face copper thickness with microtomy and is filled out
Hole Dimple value and fill out through-hole plating package hole situation, thermal stress measurement with the same the electroplates in hole of Crack Detection.
Embodiment 1:
In the 100mL three-neck flask equipped with condenser and thermometer, 4.60g (47.87mmol) 2,4- dimethyl is added
Imidazoles, 0.70g (5.32mmol) N, N, N', N'- tetramethyl -1,3- propane diamine, 14mL deionized water, 2.50g (8.16mmol)
Glycerin triglycidyl ether.It is stirred to react at 60 DEG C 1 hour using oil bath.Add 7.06g (30.36mmol) 1,4- fourth
Hexanediol diglycidyl ether, 70 DEG C are stirred to react 1 hour, then rise to 90 DEG C and be stirred to react 15 hours.Stop reaction, is cooled to room
Temperature is adjusted to pH=1-3 with 50wt% sulfuric acid, obtains leveling agent 1.
Embodiment 2-16: reference implementation example 1, the difference is that the synthon of leveling agent, ratio and dissolution monomer
Solvent is different, referring specifically to table 1.
Comparative example 1:
According to method disclosed in Chinese patent CN105732974A embodiment 1, comparative example leveling agent is prepared, number is leveling
Agent 17.
Table 1
Embodiment 17:
It takes 1.5L base soln A in Haring cell, butyl polyoxyethylene poly-oxygen propylene aether (EO/PO copolymer) is added and inhibits
Agent solution, concentration 0.6g/L；Sulfonic acid based bisulfide accelerator (SPS) solution, concentration 4ppm is added；It is separately added into concentration
The leveling agent of Examples 1 to 7 synthesis within the scope of 0.5ppm~500ppm and the leveling agent of comparative example 1, stir evenly.It presses
According to above-mentioned through-hole electroplating substrate method, it is put into the test board that radius-thickness ratio (h/ Φ) is 15, it is small that 2 are electroplated under 10ASF current density
When, the plating piece of acquisition is tested by above-mentioned the electroplates in hole effect testing method, and the results are shown in tables 2.
Table 2
It shows from the above, the copper electroplating liquid containing leveling agent of the present invention is after carrying out the electroplates in hole, resulting substrate
Smooth in appearance, free from flaw, and TP value generally require the TP value of the electroplates in hole 70% or more on 80% or more, industry, originally
The leveling agent of invention is able to satisfy the requirement in industry.And the through-hole of the copper electroplating liquid of the leveling agent containing comparative example 1 after plating,
Appearance has a small amount of node, and TP value only has 65%, it is difficult to meet the needs of in industry.
Embodiment 18:
It takes 1.5L base soln B in Haring cell, butyl polyoxyethylene poly-oxygen propylene aether (EO/PO copolymer) is added and inhibits
Agent solution, concentration 0.8g/L；Sulfonic acid based bisulfide accelerator (SPS) solution, concentration 7ppm is added；It is separately added into concentration
The leveling agent of embodiment 8~16 synthesizes within the scope of 0.5ppm~500ppm leveling agent and comparative example 1.According to above-mentioned blind hole
Electroplating substrate method is put into hole depth/diameter=100 μm/100 μm blind hole test board, and 60 points are electroplated under 15ASF current density
The plating piece of clock, acquisition is tested by above-mentioned blind hole electroplating effect test method, and the results are shown in tables 3.
Table 3
For copper electroplating liquid containing leveling agent of the present invention after carrying out filling out blind hole, the copper layer Dimple value in blind hole is whole
It is positive, i.e. layers of copper state in a concave shape, Dimple value is less than 7 μm, and substantially without cavity.And the leveling agent containing comparative example 1
Copper electroplating liquid filling perforation, then Dimple value is 13 μm, and containing a small amount of cavity, the effect of filling perforation is obviously not so good as provided by the invention
Leveling agent.
Claims (10)
1. a kind of copper electrolyte, leveling agent, copper ion source, electrolyte and halogen ion source are contained in the copper electrolyte, which is characterized in that
The leveling agent is by one or more nitrogen-containing heterocycle compounds, two kinds or more of multi-epoxy compounds and one or more polyamines
Polymer of the number average molecular weight distribution made of compound reaction in 500-20000；The nitrogen-containing heterocycle compound is on finger ring
Organic ring compound containing at least one nitrogen-atoms, the multi-epoxy compounds, which refer in structure, 2 or multiple rings
The organic compound of oxygen groups.
2. copper electrolyte according to claim 1, which is characterized in that the nitrogen-containing heterocycle compound is selected from imidazoles, benzo miaow
Hydrogen on azoles, piperidines, pyrroles, pyrazoles, triazole, tetrazolium, pyrimidine, pyridine, pyrazine, pyrrolidines or its carbon atom is substituted with a substituent
Derivative；The substituent group is selected from C1~C4 alkyl, C2~C4 alkenyl, phenyl and polycyclic aromatic base, chlorphenyl, C5~C8
Cycloalkenyl, C5~C8 saturated cyclic alkyls, C1~C2 hydroxyalkyl, C2~C5 alkoxy.
3. copper electrolyte according to claim 1, which is characterized in that in two kinds or more of the multi-epoxy compounds extremely
It is few that one is bicyclic oxygen compound, nitrogen-containing heterocycle compound, polyamine compounds, multi-epoxy compounds, bicyclic oxygen chemical combination
The molar ratio of object is 1:0.002~7:0.01~1:0.1~8.
4. copper electrolyte according to claim 3, which is characterized in that nitrogen-containing heterocycle compound, polyamine compounds, polyepoxy
Molar ratio 1:0.01~4:0.04~0.46:0.58~3.7 of compound, bicyclic oxygen compound.
5. copper electrolyte according to claim 3, which is characterized in that the bicyclic oxygen compound is C2~C12 alkyl two
Alcohol diglycidyl ether or polyethyleneglycol diglycidylether.
6. copper electrolyte according to claim 3, which is characterized in that in two kinds or more of the multi-epoxy compounds also
Contain I compound represented of formula:
Wherein, R1、R3The separately alkyl selected from hydrogen atom or C1~C8, R2Selected from hydrogen atom, methyl, ethyl, Z is represented
The carbochain of singly-bound or C1-C4, the integer that n is 1~4.
7. copper electrolyte according to claim 1, which is characterized in that the polyamine compounds are selected from shown in formula II, III, IV
Compound:
Wherein, R4~R7The separately alkyl selected from hydrogen, C1~C4, nitro, formoxyl, acetyl group, phenyl, sulfonyl, first
Oxygroup, ethyoxyl, any one of chloroethoxy, and R8For the alkyl of C1~C8；
Wherein R9~R13The separately alkyl selected from hydrogen, C1-C4, nitro, formoxyl, acetyl group, phenyl, sulfonyl, first
Oxygroup, ethyoxyl, chloroethoxy, and R14、R15Separately it is selected from the alkyl of C1~C8, the integer that m is 1~4；
Wherein, R16~R21It is separately selected from hydrogen, the alkyl of C1~C4, formoxyl, acetyl group, phenyl or sulfonyl, and
R22~R24Separately be selected from is C1~C5 alkyl, the integer that m is 1~4.
8. copper electrolyte according to claim 1, which is characterized in that in the copper electrolyte content of leveling agent be 0.5~
500ppm。
9. copper electrolyte according to claim 8, which is characterized in that in copper electrolyte containing 30~150g/L cupric sulfate pentahydrate,
The chloride ion of 200~300g/L sulfuric acid and 40~80ppm；Or in copper electrolyte containing 200~300g/L cupric sulfate pentahydrate, 10~
The chloride ion of 150g/L sulfuric acid and 40~80ppm.
10. copper electrolyte according to claim 9, which is characterized in that also containing number-average molecular weight less than 1000 in copper electrolyte
Butyl polyoxyethylene poly-oxygen propylene aether Huo of the disulphide and number-average molecular weight with sulfonic acid group less than 20000 and poly-
Ethylene oxide ether.
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| CN111020649A (en) * | 2019-12-17 | 2020-04-17 | 东莞市康迈克电子材料有限公司 | Leveling agent and preparation method thereof, electroplating solution and application thereof, electroplating method of circuit board and circuit board |
| CN111876799A (en) * | 2020-07-07 | 2020-11-03 | 广东硕成科技有限公司 | Hole metallization composition suitable for back plate and hole metallization method thereof |
| CN113463142A (en) * | 2021-06-03 | 2021-10-01 | 广东硕成科技有限公司 | Electroplating hole filling composition and electroplating hole filling method thereof |
| CN113737232A (en) * | 2021-11-08 | 2021-12-03 | 深圳市板明科技股份有限公司 | Circuit board through hole copper electroplating leveling agent and application and preparation method thereof |
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| CN113463142A (en) * | 2021-06-03 | 2021-10-01 | 广东硕成科技有限公司 | Electroplating hole filling composition and electroplating hole filling method thereof |
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