CN109980113A - A kind of Organic Light Emitting Diode and preparation method thereof - Google Patents
A kind of Organic Light Emitting Diode and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K50/17—Carrier injection layers
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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Abstract
The present invention relates to LED technology fields, more particularly to a kind of Organic Light Emitting Diode and preparation method thereof, Organic Light Emitting Diode provided by the invention, including ito substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and electrode layer；The hole injection layer is PEDOT:PSS layers and MoS2Quantum dot layer.The present invention mainly passes through MoS2Quantum dot layer enhances the Hole injection capacity of Organic Light Emitting Diode (OLED), meanwhile, the MoS2Quantum dot layer can stop PEDOT:PSS layers of absorption moisture, improve the stability of organic light emitting diode device.The maximum current efficiency of record according to the embodiment, LED device of the present invention reaches as high as 73.5cdA‑1, maximum current efficiency (60.2cdA more in the prior art‑1) be enhanced.
Description
Technical field
The present invention relates to LED technology fields more particularly to a kind of Organic Light Emitting Diode and preparation method thereof.
Background technique
In recent years, Organic Light Emitting Diode (OLED) has been widely used in actual production life, is especially being folded
Screen display field already yields unusually brilliant results, and is compared to traditional inorganic electroluminescence device, and research, preparation and application have become
Current one of research field the most active.
Solwution method prepares Organic Light Emitting Diode (OLED) device as a kind of production technology, has easy to operate, material
Utilization rate is high, cheap.Since energy level difference is obvious between common anode electrode material and emitting layer material, to be promoted
OLED device efficiency need to usually be inserted into one layer of hole injection layer for reducing energy level difference between anode and luminescent layer.Solution
Common hole-injecting material is PEDOT:PSS in method, has good electric conductivity, the high grade of transparency and suitable work function, but
To be due to PEDOT:PSS be in acid organic matter, while also easily absorbing moisture in air, and These characteristics can reduce OLED device
Performance.
Summary of the invention
The purpose of the present invention is to provide a kind of Organic Light Emitting Diode, the Hole injection capacity of the light emitting diode
By force, stability is high.
In order to achieve the above-mentioned object of the invention, the present invention provides technical solution in detail below:
The present invention provides a kind of Organic Light Emitting Diodes, from bottom to top successively include ito substrate, hole injection layer, sky
Cave transport layer, luminescent layer, electron transfer layer, electron injecting layer and electrode layer；
The hole injection layer successively includes PEDOT:PSS layers and MoS from bottom to top2Quantum dot layer.
Preferably, described PEDOT:PSS layers with a thickness of 25~35nm.
Preferably, the MoS2Quantum dot layer with a thickness of 15~25nm.
Preferably, the electron transfer layer with a thickness of 30~40nm；
The hole transmission layer with a thickness of 35~45nm；
The luminescent layer with a thickness of 15~25nm；
The electron injecting layer with a thickness of 1~5nm.
The present invention also provides the preparation methods of the Organic Light Emitting Diode described in above-mentioned technical proposal, including following step
It is rapid:
After PEDOT:PSS solution is spin-coated on ito substrate upper surface, the first annealing is carried out, obtains PEDOT:PSS layers；Institute
The solvent for stating PEDOT:PSS solution is water；
By MoS2After quantum dot solution is spin-coated on PEDOT:PSS layer surface, the second annealing is carried out, MoS is obtained2Quantum dot layer；
In the MoS2Hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer is successively deposited in quantum dot layer surface
And electrode layer, obtain Organic Light Emitting Diode.
Preferably, the spincoating conditions PEDOT:PSS solution being spin-coated in ito substrate surface process are as follows: revolving speed is
2500~3500rpm, time are 50~70s.
Preferably, the temperature of first annealing is 120~140 DEG C, and the time of first annealing is 10~20min.
Preferably, the MoS2The concentration of quantum dot solution is 8~25mg/mL.
Preferably, by the MoS2Quantum dot solution is spin-coated on the spincoating conditions during PEDOT:PSS layer surface are as follows: turns
Speed is 2500~3500rpm, and the time is 50~70s.
Preferably, the temperature of second annealing is 100~150 DEG C, and the time of second annealing is 10~20min.
The present invention provides a kind of Organic Light Emitting Diode, including ito substrate, hole injection layer, hole transmission layer, shine
Layer, electron transfer layer, electron injecting layer and electrode layer；The hole injection layer from bottom to top successively include PEDOT:PSS layer with
MoS2Quantum dot layer.The present invention mainly passes through MoS2Quantum dot layer injects to enhance the hole of Organic Light Emitting Diode (OLED)
Ability, meanwhile, the MoS2Quantum dot layer can stop PEDOT:PSS layers of absorption moisture, meanwhile, the seal coat structure can be with
Guarantee PEDOT:PSS layers and MoS2Quantum dot layer is arranged according to optimal crystal habit, improves Organic Light Emitting Diode device
The stability of part.The maximum current efficiency of record according to the embodiment, LED device of the present invention reaches as high as
73.5cd·A-1, maximum current efficiency (60.2cdA more in the prior art-1) be enhanced.
Detailed description of the invention
Fig. 1 is the MoS that embodiment 1 is prepared2The AFM of quantum dot layer schemes；
Fig. 2 is the current efficiency comparison diagram for the Organic Light Emitting Diode that embodiment 1 and comparative example 1 are prepared.
Specific embodiment
The present invention provides a kind of Organic Light Emitting Diodes, from bottom to top successively include ito substrate, hole injection layer, sky
Cave transport layer, luminescent layer, electron transfer layer, electron injecting layer and electrode layer；
The hole injection layer successively includes PEDOT:PSS layers and MoS from bottom to top2Quantum dot layer.
In the present invention, if without specified otherwise, all raw material components are commercial product well known to those skilled in the art.
In the present invention, the Organic Light Emitting Diode includes ito substrate；In the present invention, the thickness of the ito substrate
Preferably 140~160nm, more preferably 145~155nm, most preferably 148~152nm.
In the present invention, the Organic Light Emitting Diode further includes hole injection layer；The hole injection layer includes
PEDOT:PSS layers and MoS2Quantum dot layer；PEDOT:PSS layers of the thickness is preferably 25~35nm, more preferably 28~
32nm, most preferably 30nm；The MoS2The thickness of quantum dot layer is preferably 15~25nm, more preferably 18~22nm, optimal
It is selected as 20nm.
In the present invention, the Organic Light Emitting Diode further includes hole transmission layer；The material of the hole transmission layer is excellent
It is selected as N, "-three (carbazole -9- bases) of N'- diphenyl-N, N'- (1- naphthalene) -1,1'- biphenyl -4,4'- diamines (NPB), 4,4', 4
Triphenylamine (TCTA), N, bis- (3- the aminomethyl phenyl)-N of N'-, N'- diphenyl-[1,1'- biphenyl] -4,4'- diamines (TPD), 4- [1-
[4- [two (4- aminomethyl phenyl) amino] phenyl] cyclohexyl]-N- (3- aminomethyl phenyl)-N- (4- aminomethyl phenyl) aniline (TAPC) and
One or more of bis- (4- aminomethyl phenyl) -4,4'- benzidines (p-TPD) of N, N'- diphenyl-N, N'-；In the present invention
In, when the material of the hole transmission layer is two or more in above-mentioned specific choice, described two above specific substances
Orbital energy level (HOMO) has been occupied according to highest to be combined from high to low, i.e., the material of HOMO high is first deposited on hole injection layer
Material, then the low material of HOMO is deposited.
In the present invention, the thickness of the hole transmission layer is preferably 35~45nm, more preferably 38~42nm, most preferably
For 40nm.In the present invention, the hole transmission layer is preferably one or two layers；It is preferred when the hole transmission layer is two layers
Including NPB layers (30nm) and TCTA layers (10nm).
In the present invention, the Organic Light Emitting Diode further includes luminescent layer；When the luminescent layer is 1 layer, the hair
The material of photosphere is preferably 8-hydroxyquinoline aluminium (Alq3)；When the luminescent layer is 2 layers, the material of the luminescent layer is preferably wrapped
Include material of main part and guest materials；The material of main part is preferably 9,10- bis- (2- naphthalene) anthracene (ADN), 4,4- bis- (9- carbazole)
Biphenyl (CBP), 2- hydroxy-3-methyl -2- cyclopentene-1-one (MCP) and 4- [1- [4- [two (4- aminomethyl phenyl) amino] phenyl]
One or more of cyclohexyl]-N- (3- aminomethyl phenyl)-N- (4- aminomethyl phenyl) aniline (TATC)；The guest materials is excellent
It is selected as 4- (dimercapto methylene) -2- methyl -6- (to dimethylaminostyryl) -4H- pyrans (DCM1) and/or three (2- benzene
Yl pyridines) close iridium (Ir (ppy)3)；The material and when guest materials based on the material of the luminescent layer, according to art technology
The matching rule of HOMO highest occupied molecular orbital energy level (HOMO) and lowest unoccupied molecular orbital energy level (LUMO) known to personnel carries out main body material
The combination of material and guest materials.In the present invention, the material of the luminescent layer can specifically be selected as MCP:8%Ir (ppy)3
(described 8% is Ir (ppy)3Account for the mass percent of MCP).
In the present invention, the thickness of the luminescent layer is preferably 15~25nm, more preferably 18~22nm, most preferably
20nm.In the present invention, the luminescent layer is preferably 1 layer.
In the present invention, the Organic Light Emitting Diode further includes electron transfer layer；The material of each layer of electron transfer layer
Material is preferably 4,7- diphenyl -1,10- ferrosin (Bphen), 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene
(TPBi) and three (8-hydroxyquinoline) aluminium (Alq3One or more of)；When the material of the electron transfer layer is above-mentioned specific
When two or more in selection, described two above specific substances do not occupy orbital energy level (LUMO) from high to low according to minimum
It is combined, i.e., the material of LUMO high is first deposited on the electron transport layer, then the low material of LUMO is deposited
.In the present invention, the material of the electron transfer layer can specifically be selected as TPBi.In the present invention, described
The thickness of electron transfer layer is preferably 30~40nm, more preferably 32~38nm, most preferably 34~36nm.In the present invention,
The electron transfer layer is preferably 1 layer.
In the present invention, the Organic Light Emitting Diode further includes electron injecting layer；The material of the electron injecting layer is excellent
It is selected as lithium fluoride and/or (8-hydroxyquinoline)-lithium (Liq).In the present invention, the material of the electron injecting layer can be specific
It is selected as Liq.In the present invention, the thickness of the electron injecting layer is preferably 1~5nm, more preferably 2~3nm.In the present invention
In, the electron injecting layer is preferably 1 layer.
In the present invention, the Organic Light Emitting Diode further includes electrode layer；The material of the electrode layer is preferably Al, Ag
One or more of with Au.In the present invention, the material of the electrode layer can specifically be selected as Al.
In the present invention, the thickness of the electrode layer is preferably 80~120nm, more preferably 90~110nm, most preferably
100nm.In the present invention, the electrode layer is preferably 1 layer.
The present invention also provides the preparation methods of the Organic Light Emitting Diode, comprising the following steps:
After PEDOT:PSS solution is spin-coated on ito substrate surface, the first annealing is carried out, obtains PEDOT:PSS layers；It is described
The solvent of PEDOT:PSS solution is water；
By MoS2After quantum dot solution is spin-coated on PEDOT:PSS layer surface, the second annealing is carried out, MoS is obtained2Quantum dot layer；
In the MoS2Hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer is successively deposited in quantum dot layer surface
And electrode layer, obtain Organic Light Emitting Diode.
After PEDOT:PSS solution is spin-coated on ito substrate surface by the present invention, the first annealing is carried out, PEDOT:PSS is obtained
Layer；The solvent of the PEDOT:PSS solution is water.
Before carrying out spin coating, the present invention preferably pre-processes the ito substrate；In the present invention, the pretreatment
Preferably include cleaning, the processing of dry and ultraviolet lighting.The present invention is to the no any special restriction of cleaning, using this field
Cleaning process known to technical staff carries out.In the present invention, the drying is preferably dried；The present invention is to the drying
Condition there is no any special restriction.
In the present invention, the time of the ultraviolet lighting processing is preferably 5~10min, more preferably 6~8min.It is ultraviolet
After lighting process, ultraviolet lighting treated ito substrate is preferably stood into 10min.In the present invention, due to ultraviolet lighting processing
It can change the work function of ITO, therefore need to stand to restore the work function of ITO after ultraviolet lighting processing.
In the present invention, PEDOT:PSS solution is preferably commercial product (Sigma, model 4083).
In the present invention, the revolving speed in the spin coating process is preferably 2500~3500rpm, more preferably 2800~
3200rpm, most preferably 3000rpm；The time of the spin coating is preferably 50~70s, more preferably 55~65s, most preferably
60s。
In the present invention, the detailed process of the spin coating is preferred are as follows: the running parameter for adjusting KW-4 spin coating instrument, by ITO base
Plate is placed in the piece support of KW-4 spin coating instrument, is fixed ITO substrate with vacuum suction piece mode, draws PEDOT:PSS with liquid-transfering gun
Solution, pipette tips start rapidly KW-4 spin coating instrument from ito substrate 3cm or so after dripping PEDOT:PSS solution on an ito substrate, into
Row spin coating.
In the present invention, the temperature of first annealing is preferably 120~140 DEG C, more preferably 125~135 DEG C, optimal
It is selected as 130 DEG C；The time of first annealing is preferably 10~20min, more preferably 13~16min, most preferably 15min.
In the present invention, the device of first annealing is preferably heating plate.
After the completion of first annealing, the present invention is preferably cooled down, and obtains PEDOT:PSS layers；The present invention does not have the cooling
There is any special restriction, is carried out using cooling procedure well known to those skilled in the art cooling.
After obtaining PEDOT:PSS layers, the present invention is by MoS2After quantum dot solution is spin-coated on PEDOT:PSS layer surface, carry out
Second annealing, obtains MoS2Quantum dot layer.
In the present invention, the MoS2The concentration of quantum dot solution is preferably 8~25mg/mL, more preferably 10~20mg/
ML, most preferably 12~16mg/mL.In the present invention, the MoS2Quantum dot solution preferably refers to " BagalkotV, Zhang
L,Levy-Nissenbaum E,et al.Quantum dot-aptamer conjugates for synchronous
cancer imaging,therapy,and sensing ofdrug delivery based on bi-fluorescence
Resonance energy transfer [J] .Nano letters, 2007,7 (10): preparation method disclosed in 3065-3070 "
It is prepared.
In the present invention, the revolving speed in the spin coating process is preferably 2500~3500rpm, more preferably 2800~
3200rpm, most preferably 3000rpm；The time of the spin coating is preferably 50~70s, more preferably 55~65s, most preferably
60s。
In the present invention, the detailed process of the spin coating preferably refers to the process of spin coating PEDOT:PSS solution.
In the present invention, the temperature of second annealing is preferably 100~150 DEG C, more preferably 125~135 DEG C, optimal
It is selected as 130 DEG C；The time of second annealing is preferably 10~20min, more preferably 13~16min, most preferably 15min.
In the present invention, the device of second annealing is preferably heating plate.
After the completion of second annealing, the present invention is preferably cooled down, and obtains MoS2Quantum dot layer；The present invention does not have the cooling
There is any special restriction, is carried out using cooling procedure well known to those skilled in the art cooling.
Obtain MoS2After quantum dot layer, the present invention is in the MoS2Quantum dot layer surface is successively deposited hole transmission layer, shines
Layer, electron transfer layer, electron injecting layer and electrode layer, obtain Organic Light Emitting Diode.
In the present invention, the evaporation rate that the hole transmission layer, luminescent layer and electron transfer layer is deposited preferably is stood alone asMore preferablyThe evaporation rate that the electron injecting layer is deposited preferably is stood alone asMore preferablyThe evaporation rate that the electrode layer is deposited preferably is stood alone as
More preferably
The present invention does not have any special restriction to the detailed process of the vapor deposition, and use is well known to those skilled in the art
Vapor deposition process is deposited.
In the present invention, when the material of hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer or electrode layer is
When two or more situations, specific described two above materials are deposited simultaneously；For example, working as the material of hole transmission layer
When for TCTA and NPB, highest is first deposited and has occupied the high TCTA of orbital energy level (HOMO), then HOMO highest occupied molecular orbital energy level is deposited
(HOMO) low NPB.
In the present invention, effective work area of OLED device prepared by the preparation method be preferably 2.5 ×
2mm2。
Organic Light Emitting Diode provided by the invention and preparation method thereof is described in detail below with reference to embodiment,
But they cannot be interpreted as limiting the scope of the present invention.
Embodiment 1
After the ito substrate of 150nm thickness is cleaned and dried, after carrying out ultraviolet lighting processing 5min, 10min is stood,
Obtain pretreated ito substrate；
The running parameter (revolving speed 3000rpm, time 60s) for adjusting KW-4 spin coating instrument, is placed on KW-4 for ito substrate
In the piece support of spin coating instrument, ITO substrate is fixed with vacuum suction piece mode, with liquid-transfering gun draw PEDOT:PSS solution, pipette tips from
Ito substrate 3cm or so starts rapidly KW-4 spin coating instrument after dripping PEDOT:PSS solution on an ito substrate, carry out spin coating；Spin coating
After the completion, anneal 15min under conditions of 130 DEG C, cooling, obtains PEDOT:PSS layers (30nm)；
According to the process of above-mentioned spin coating and annealing, MoS is prepared in PEDOT:PSS layer surface2Quantum dot layer (20nm) (difference
It is: MoS2The concentration of quantum dot solution is 12mg/mL, and annealing temperature is 150 DEG C)；
WithEvaporation rate in MoS2Hole transmission layer is successively deposited in quantum dot layer surface: NPB layers (30nm)
With TCTA layers (10nm), luminescent layer: MCP:8%Ir (ppy)3Layer (20nm), electron transfer layer: TPBi layers (35nm)；WithEvaporation rate TPBi layer surface be deposited electron injecting layer: Liq layers (1nm)；WithEvaporation rate exist
Liq layer surface electrode evaporation layer: Al layers (100nm), Organic Light Emitting Diode is obtained.
In the case where atmospheric environment, unencapsulated, the brightness after energization declines the Organic Light Emitting Diode after half an hour
Subtract 15%, is the 85% of original intensity.
Embodiment 2
After the ito substrate of 150nm thickness is cleaned and dried, after carrying out ultraviolet lighting processing 5min, 10min is stood,
Obtain pretreated ito substrate；
The running parameter (revolving speed 3000rpm, time 60s) for adjusting KW-4 spin coating instrument, is placed on KW-4 for ito substrate
In the piece support of spin coating instrument, ITO substrate is fixed with vacuum suction piece mode, with liquid-transfering gun draw PEDOT:PSS solution, pipette tips from
Ito substrate 3cm or so starts rapidly KW-4 spin coating instrument after dripping PEDOT:PSS solution on an ito substrate, carry out spin coating；Spin coating
After the completion, anneal 15min under conditions of 130 DEG C, cooling, obtains PEDOT:PSS layers (30nm)；
According to the process of above-mentioned spin coating and annealing, MoS is prepared in PEDOT:PSS layer surface2Quantum dot layer (25nm) (difference
It is: MoS2The concentration of quantum dot solution is 15mg/mL, and annealing temperature is 150 DEG C)；
WithEvaporation rate in MoS2Hole transmission layer is successively deposited in quantum dot layer surface: NPB layers (20nm)
With TCTA layers (15nm), luminescent layer: TCTA:TPBi:Ir (ppy)3Layer (30nm) TCTA:TPBi molar ratio is 3:7, Ir (ppy)3
Weight ratio is 12%, electron transfer layer: TPBi (30nm)；WithEvaporation rate the surface TPBi be deposited electron injection
Layer: LiF (1nm)；WithEvaporation rate in the surface LiF electrode evaporation layer: Al layers (100nm), obtain organic light emission two
Pole pipe.
In the case where atmospheric environment, unencapsulated, the brightness after energization declines the Organic Light Emitting Diode after half an hour
Subtract 10%, is the 90% of original intensity.
Embodiment 3
After the ito substrate of 170nm thickness is cleaned and dried, after carrying out ultraviolet lighting processing 10min, 5min is stood,
Obtain pretreated ito substrate；
The running parameter (revolving speed 3000rpm, time 60s) for adjusting KW-4 spin coating instrument, is placed on KW-4 for ito substrate
In the piece support of spin coating instrument, ITO substrate is fixed with vacuum suction piece mode, with liquid-transfering gun draw PEDOT:PSS solution, pipette tips from
Ito substrate 3cm or so starts rapidly KW-4 spin coating instrument after dripping PEDOT:PSS solution on an ito substrate, carry out spin coating；Spin coating
After the completion, anneal 15min under conditions of 130 DEG C, cooling, obtains PEDOT:PSS layers (30nm)；
According to the process of above-mentioned spin coating and annealing, MoS is prepared in PEDOT:PSS layer surface2Quantum dot layer (20nm) (difference
It is: MoS2The concentration of quantum dot solution is 12mg/mL, and annealing temperature is 100 DEG C)；
WithEvaporation rate in MoS2Hole transmission layer is successively deposited in quantum dot layer surface: TAPC (30nm),
Luminescent layer: BCP:8%Ir (ppy)3Layer (20nm), electron transfer layer: TPBi (35nm)；WithEvaporation rate exist
Electron injecting layer: LiF (1.5nm) is deposited in the surface TPBi；WithEvaporation rate in the surface LiF electrode evaporation layer: Al layers
(100nm), obtains Organic Light Emitting Diode.
In the case where atmospheric environment, unencapsulated, the brightness after energization declines the Organic Light Emitting Diode after half an hour
Subtract 12%, is the 88% of original intensity.
Comparative example 1
After the ito substrate of 150nm thickness is cleaned and dried, after carrying out ultraviolet lighting processing 5min, 10min is stood,
Obtain pretreated ito substrate；
In ito substrate surface successively spin coating PEDOT:PSS layers (30nm), it is deposited NPB layers (30nm), TCTA layers (10nm),
MCP:8wt%Ir (ppy)3Layer (20nm), obtains light emitting diode by TPBi layers (35nm) and Al layers (100nm).
In the case where atmospheric environment, unencapsulated, the brightness after energization declines the Organic Light Emitting Diode after half an hour
Subtract 20%, is the 80% of original intensity.
Embodiment 4
MoS is prepared in embodiment 12After quantum dot layer, to the MoS2Quantum dot layer carries out AFM test；Such as Fig. 1 institute
Show that (left figure is the MoS2Quantum dot layer pattern top view is the MoS by figure2The three-dimensional display figure of quantum dot layer), by Fig. 1
It is found that the MoS2MoS in quantum dot layer2Partial size be less than 4nm, and the pattern of film is very smooth, RMS (root mean square roughness
Degree) it is 0.313nm；
The Organic Light Emitting Diode that embodiment 1 and comparative example 1 are prepared carries out the test of current efficiency；Test result
(None MoS as shown in Figure 22QD is comparative example 1, MoS2QD is embodiment 1), as seen from the figure, organic hair described in embodiment 1
The maximum current efficiency of optical diode is 72.7cdA-1, the maximum current efficiency of Organic Light Emitting Diode described in comparative example 1
For 60.2cdA-1, compared with the efficiency raising 20.7% of comparative example；
The Organic Light Emitting Diode that embodiment 2 and embodiment 3 are prepared carries out the test of current efficiency；Its highest electricity
Flowing efficiency is respectively 73.5cdA-1And 71.4cdA-1。
As seen from the above embodiment, Organic Light Emitting Diode provided by the invention current efficiency with higher and stabilization
Property.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of Organic Light Emitting Diode successively includes ito substrate, hole injection layer, hole transmission layer, shines from bottom to top
Layer, electron transfer layer, electron injecting layer and electrode layer；
The hole injection layer successively includes PEDOT:PSS layers and MoS from bottom to top2Quantum dot layer.
2. Organic Light Emitting Diode as described in claim 1, which is characterized in that described PEDOT:PSS layers with a thickness of 25~
35nm。
3. Organic Light Emitting Diode as described in claim 1, which is characterized in that the MoS2Quantum dot layer with a thickness of 15~
25nm。
4. Organic Light Emitting Diode as described in claim 1, which is characterized in that the electron transfer layer with a thickness of 30~
40nm；
The hole transmission layer with a thickness of 35~45nm；
The luminescent layer with a thickness of 15~25nm；
The electron injecting layer with a thickness of 1~5nm.
5. the preparation method of the described in any item Organic Light Emitting Diodes of Claims 1 to 4, comprising the following steps:
After PEDOT:PSS solution is spin-coated on ito substrate upper surface, the first annealing is carried out, obtains PEDOT:PSS layers；It is described
The solvent of PEDOT:PSS solution is water；
By MoS2After quantum dot solution is spin-coated on PEDOT:PSS layer surface, the second annealing is carried out, MoS is obtained2Quantum dot layer；
In the MoS2Hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and electricity is successively deposited in quantum dot layer surface
Pole layer, obtains Organic Light Emitting Diode.
6. preparation method as claimed in claim 5, which is characterized in that the PEDOT:PSS solution is spin-coated on ito substrate table
Spincoating conditions during face are as follows: revolving speed is 2500~3500rpm, and the time is 50~70s.
7. preparation method as claimed in claim 5, which is characterized in that the temperature of first annealing is 120~140 DEG C, institute
The time for stating the first annealing is 10~20min.
8. preparation method as claimed in claim 5, which is characterized in that the MoS2The concentration of quantum dot solution is 8~25mg/
mL。
9. preparation method as claimed in claim 5, which is characterized in that by the MoS2Quantum dot solution is spin-coated on PEDOT:PSS
Spincoating conditions during layer surface are as follows: revolving speed is 2500~3500rpm, and the time is 50~70s.
10. preparation method as described in claim 1, which is characterized in that the temperature of second annealing is 100~150 DEG C, institute
The time for stating the second annealing is 10~20min.
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| CN201910269033.9A CN109980113A (en) | 2019-04-04 | 2019-04-04 | A kind of Organic Light Emitting Diode and preparation method thereof |
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