CN109980088B - Hole transport material and preparation method and application thereof - Google Patents
Hole transport material and preparation method and application thereof Download PDFInfo
- Publication number
- CN109980088B CN109980088B CN201711466430.2A CN201711466430A CN109980088B CN 109980088 B CN109980088 B CN 109980088B CN 201711466430 A CN201711466430 A CN 201711466430A CN 109980088 B CN109980088 B CN 109980088B
- Authority
- CN
- China
- Prior art keywords
- alkali metal
- hole transport
- graphdiyne
- transport material
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention relates to the technical field of hole transport materials, and particularly provides a hole transport material and a preparation method and application thereof. The hole transport material is composed of graphdiyne and an alkali metal doped in the graphdiyne. The preparation method comprises the following steps: mixing the graphdiyne and the alkali metal precursor to prepare a graphdiyne-alkali metal precursor; and calcining the graphyne-alkali metal precursor in an inert atmosphere to convert the alkali metal precursor into alkali metal and doping the alkali metal into the graphyne to obtain the hole transport material. Compared with pure graphite alkyne, the hole transport material of the invention has the advantages that the valence band and the conduction band are integrally reduced, the forbidden band width is increased, the energy band position is integrally moved downwards, the concentration of carriers can be effectively improved, and the hole transport material is very suitable for being used as a hole transport layer in the fields of luminescent devices, solar cells and the like.
Description
Technical Field
The invention belongs to the technical field of hole transport materials, and particularly relates to a hole transport material and a preparation method and application thereof.
Background
In the field of diodes, electron transport and hole transport are often involved, and the transport rates of hole transport and electron transport are generally different, which greatly affects the efficiency, lifetime, etc. of the diode.
With the advent of quantum dots, quantum dot light emitting diodes (QLEDs) will become the core technology of a new generation of display devices due to their advantages of high stability, solution processability, and high color saturation. In a QLED device, the selection of a carrier transport layer greatly affects the performance of light emission efficiency, device lifetime, and the like. At present, the transmission performance of the hole transmission layer is far lower than that of the electron transmission layer, and the charge transmission balance of the device is difficult to realize.
At present, the hole injection/transport layer of the QLED is generally prepared by using organic polymers, metal oxides and the like, however, organic polymers such as PEDOT: the PSS has the disadvantages of easy corrosion of electrodes, poor stability and the like, and the metal oxide material has the problem of low hole transport efficiency, and cannot simultaneously guarantee the luminous efficiency and the service life of the QLED. Therefore, there is a need for a new hole injection/transport layer material to improve the current hole transport problem.
Disclosure of Invention
The invention aims to provide a hole transport material and a preparation method thereof, and aims to solve the problems that an existing hole transport material is easy to corrode an electrode, poor in stability, low in hole transport efficiency and the like.
Further, the invention also provides application of the composite nano material.
The invention is realized by the fact that the hole transport material consists of graphdiyne and alkali metal doped in the graphdiyne.
And, a method for preparing a hole transport material, comprising at least the steps of:
mixing the graphdiyne and the alkali metal precursor to prepare a graphdiyne-alkali metal precursor;
and calcining the graphyne-alkali metal precursor in an inert atmosphere to convert the alkali metal precursor into alkali metal and doping the alkali metal into the graphyne to obtain the hole transport material.
Accordingly, a light-emitting diode comprises a hole transport layer containing the hole transport material as described above or the hole transport material prepared by the preparation method.
A solar cell comprises a hole transport medium layer, wherein the hole transport medium layer contains the hole transport material or the hole transport material prepared by the preparation method.
The invention has the following beneficial effects: according to the hole transport material provided by the invention, the alkali metal is doped in the graphite alkyne lamellar structure and is positioned in the center of the cavity of the graphite alkyne reticular structure, so that the original conjugated electron charge distribution of the graphite alkyne is changed, the valence band and the conduction band of the graphite alkyne are integrally reduced, and the forbidden band width is increased; meanwhile, the alkali metal also enables electrons and holes to be limited in the alkali metal doped region and the graphdine non-doped region respectively, so that the recombination of current carriers in the graphdine layer can be reduced, the distribution of HOMO energy level and LUMO energy level is increased, and the effect of improving the concentration of the current carriers is achieved.
According to the preparation method of the hole transport material, the alkali metal precursor is directly mixed with the graphyne, and the doping of alkali metal to the graphyne is realized by adopting a calcining mode, so that the original conjugated electron charge distribution of the graphyne is changed, the valence band and the conduction band of the graphyne are integrally reduced, and the forbidden bandwidth is increased; meanwhile, the alkali metal also enables electrons and holes to be limited in the alkali metal doped region and the graphdine non-doped region respectively, so that the recombination of current carriers in the graphdine layer can be reduced, the distribution of HOMO energy level and LUMO energy level is increased, and the effect of improving the concentration of the current carriers is achieved. Moreover, the preparation method of the hole transport material provided by the invention has the advantages of simple and easily-controlled process, low cost and easy realization of industrial production.
Compared with pure graphite alkyne, the hole transport material provided by the invention has the advantages that the valence band and the conduction band are integrally reduced, the forbidden band width is increased, the energy band position is integrally moved downwards, the concentration of carriers can be effectively improved, and the hole transport material is very suitable for being used as a hole transport layer in the fields of light-emitting devices, solar cells and the like.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic flow chart of a process for preparing a hole transport material according to the present invention;
FIG. 2 is a schematic diagram of a quantum dot light emitting diode structure including the hole transport material of the present invention.
Wherein, 1-a substrate; 2-an anode; 3-a hole transport layer; 4-a quantum dot light emitting layer; 5-an electron transport layer; 6-cathode.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The present invention relates to the noun explanation:
a. graphdine-alkali metal precursor: the intermediate is obtained by mixing an alkali metal precursor with the graphdiyne, wherein the alkali metal precursor is converted into alkali metal after the intermediate is calcined, and the alkali metal precursor is doped on the graphdiyne.
The embodiment of the invention provides a hole transport material.
The hole transport material is composed of graphdiyne and an alkali metal doped in the graphdiyne.
The hole transport material comprises graphite alkyne and alkali metal, wherein the alkali metal is doped in a graphite alkyne sheet structure and is positioned in the center of a cavity of a graphite alkyne net structure, so that the original conjugated electron charge distribution of the graphite alkyne is changed, the valence band and the conduction band of the graphite alkyne are integrally reduced, and the forbidden band width is increased; meanwhile, the alkali metal also enables electrons and holes to be limited in the alkali metal doped region and the graphdine non-doped region respectively, so that the recombination of current carriers in the graphdine layer can be reduced, the distribution of HOMO energy level and LUMO energy level is increased, and the effect of improving the concentration of the current carriers is achieved.
The graphdiyne provided by the invention can be at least one of graphdiyne nano-microspheres, graphdiyne nano-wires, graphdiyne nano-rods, graphdiyne nano-cones and graphdiyne nano-hollow spheres. The form of the graphoyne is not limited to these, and the graphoyne is just currently common.
Preferably, in the hole transport material of the present invention, the alkali metal accounts for 0.5 to 5.0% by mass of the graphdine. If the doping amount is too low, the doping distribution is not uniform, the improvement effect on the graphdiyne is not obvious, and if the proportion is too high, the hole transport material is mainly converted into alkali metal, so that the performance of the graphdiyne serving as a hole transport main body structure is reduced, and the aim of modifying the graphdiyne is also fulfilled.
Preferably, the alkali metal is at least one of lithium, sodium, potassium, rubidium, cesium, francium. These alkali metals all have the effect of changing the original conjugated electronic charge distribution of the graphdine, but because the atomic particle sizes of rubidium, cesium and francium are large, the alkali metals are not easily added and are generally not used.
Further preferably, the alkali metal is lithium. The lithium atom has the smallest atomic particle size in all alkali metals, the doping compactness is good, and the modification effect is more obvious compared with other alkali metals.
Accordingly, the invention further provides a preparation method of the hole transport material on the basis of providing the hole transport material. That is, the hole transporting material of the present invention mentioned above can be produced by the present production method.
As shown in fig. 1, in an embodiment, the method for preparing the hole transport material at least includes the following steps:
s01, mixing the graphdiyne and the alkali metal precursor to prepare a graphdiyne-alkali metal precursor;
and S02, calcining the graphyne-alkali metal precursor in an inert atmosphere to convert the alkali metal precursor into alkali metal and doping the alkali metal into the graphyne to obtain the hole transport material.
The technical solution of the present invention is explained in detail below.
In any embodiment, the graphdiyne used for doping may be at least one of graphdiyne nanospheres, graphdiyne nanowires, graphdiyne nanorods, graphdiyne nanocones, and graphdiyne nanospheres. The form of the graphoyne is not limited to these, and the graphoyne is just currently common.
In step S01, in order to make the mixing effect of the graphdine and the alkali metal precursor better, a proper amount of solvent may be added when the graphdine and the alkali metal precursor are mixed. These solvents may be polar or non-polar solvents.
Preferably, the solvent may be any one of ultrapure water, methanol, ethanol, acetone, and the like. When a solvent is specifically selected, it is considered that both the graphdine and the alkali metal precursor can be dissolved.
If the solvent is adopted for dissolving, after the graphite alkyne-alkali metal precursor is obtained by mixing, the solvent can be removed by heating, and the solid mixed precursor mixed by the graphite alkyne and the alkali metal precursor is obtained. The heating temperature is different according to the boiling point of the solvent, such as ultra pure water, which can be removed at a heating temperature of 90-100 deg.C, and ethanol can be removed at a heating temperature of 70-80 deg.C.
Preferably, the alkali metal precursor is at least one of halides of alkali metals. The alkali metal halide is used as an alkali metal source, so that the alkali metal halide can be well mixed with the graphite alkyne on one hand, and can be decomposed in the calcining process on the other hand, thereby removing halogen impurities and avoiding introducing other impurities.
More preferably, the halide of an alkali metal is at least one of lithium fluoride, lithium chloride, lithium bromide, lithium iodide, sodium fluoride, sodium chloride, sodium bromide, sodium iodide, potassium fluoride, potassium chloride, potassium bromide, potassium iodide, rubidium fluoride, rubidium chloride, rubidium bromide, rubidium iodide, cesium fluoride, cesium chloride, cesium bromide, and cesium iodide. The alkali metal halides listed all decompose at high temperatures to give alkali metal, and thus allow good doping of the graphdiyne.
Preferably, when the alkali metal precursor is mixed with the graphdiyne, the addition amount of the alkali metal precursor is 0.5-5.0% of the mass of the graphdiyne. When the amount of the added alkali metal precursor is too small, the alkali metal precursor is not uniformly dispersed in the graphite alkyne when being calcined to form alkali metal, so that the modification effect cannot be achieved; if the addition amount of the alkali metal precursor is too much, the hole transport material is mainly converted into the alkali metal, so that the performance of the graphdiyne as the main hole transport component is reduced, and the aim of modification is also fulfilled.
In step S02, when the graphdine-alkali metal precursor is calcined, it is necessary to avoid introducing new impurities due to side reactions in the presence of oxygen in an inert atmosphere.
Preferably, the inert gas is any one of nitrogen, helium, neon and argon.
In the calcination treatment process of step S02, heating may be performed according to a certain temperature gradient, and the calcination may be performed at a constant temperature for a certain period of time after reaching the calcination temperature, or the calcination may be performed at a constant temperature by directly heating to the calcination temperature without a temperature gradient. Different temperatures are selected according to different metal precursors during calcination. Preferably, the calcination temperature is 200-1500 ℃. At this temperature, the alkali metal precursor gradually decomposes and forms a doped structure with the graphdiyne, and if the temperature is too low, it is difficult to ensure complete removal of halogen impurities, and if the temperature is too high, the layered structure of the graphdiyne is easily destroyed.
According to the preparation method of the hole transport material provided by the embodiment of the invention, the alkali metal precursor is directly mixed with the graphdine, and the doping of the alkali metal to the graphdine is realized by adopting a calcining mode, so that the original conjugated electron charge distribution of the graphdine is changed, the valence band and the conduction band of the graphdine are integrally reduced, and the forbidden band width is increased; meanwhile, the alkali metal also enables electrons and holes to be limited in the alkali metal doped region and the graphdine non-doped region respectively, so that the recombination of current carriers in the graphdine layer can be reduced, the distribution of HOMO energy level and LUMO energy level is increased, and the effect of improving the concentration of the current carriers is achieved. Moreover, the preparation method of the hole transport material provided by the invention has the advantages of simple and easily-controlled process, low cost and easy realization of industrial production.
Compared with pure graphite alkyne, the hole transport material provided by the invention has the advantages that the valence band and the conduction band are integrally reduced, the forbidden band width is increased, the energy band position is integrally moved downwards, and the carrier concentration can be effectively improved, so that the hole transport material can be widely used for manufacturing various devices needing hole transport. For example, it can be used for the manufacture of light-emitting diodes or solar cells.
Furthermore, the invention also provides a light-emitting diode which comprises a hole transport layer, wherein the hole transport layer contains the hole transport material.
In one embodiment, the light emitting diode includes an anode, a hole transport layer, a light emitting layer, and a cathode, which are stacked, wherein the hole transport layer contains the hole transport material according to the present invention.
In one embodiment, the light emitting diode includes a substrate, and an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode sequentially stacked from one surface of the substrate to the outside, wherein the hole transport layer contains the above-mentioned hole transport material of the present invention. Of course, the structure of the light emitting diode according to the present invention is not limited thereto, and light emitting diodes having other structures, as long as they include the hole transport material of the present invention, are within the scope of the present invention.
Preferably, the light emitting layer is a quantum dot light emitting layer, and the light emitting diode formed at this time is a quantum dot light emitting diode (QLED), and the specific structure is as shown in the schematic diagram of fig. 2. In addition, the light emitting layer may also be an organic light emitting layer, and the light emitting diode formed in this case is an Organic Light Emitting Diode (OLED).
In one embodiment, the quantum dot light emitting diode (QLED) is manufactured as follows:
(1) depositing a hole transport layer on one surface of the anode substrate, wherein the material of the hole transport layer is provided by the hole transport material provided by the invention;
(2) and depositing a quantum dot light-emitting layer, an electron transport layer and a cathode in sequence from the surface of the hole transport layer to the outside.
(3) And packaging the obtained QLED.
Among them, the preferable thickness of the hole transport layer is 10 to 100 nm.
The quantum dots are one of red, green and blue, and any one of red, green and blue or other yellow light can be used. Specifically, the material may be at least one of CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS, CuInSe, and various core-shell structure quantum dots or alloy structure quantum dots. The quantum dot light emitting layer of the material has the characteristics of wide and continuous excitation spectrum distribution, high emission spectrum stability and the like.
Preferably, the oxygen content and the water content are both lower than 0.1ppm in the environment of the encapsulation process to ensure the stability of the device performance.
The anode, the cathode and the electron transport layer related to the light emitting diode, the anode material may be ITO, the cathode material may be Al, the electron transport layer material may be ZnO, or other materials may be adopted, which are conventional materials in the art, and therefore, for saving space, a detailed description is not provided herein.
The substrate of the above light emitting diode may be glass, or other flexible substrates. Such as polyethylene naphthalate (PEN), polyethylene terephthalate (PEI), Polyaniline (PEN), polyvinyl alcohol (PVA), and the like.
Furthermore, the invention also provides a solar cell, which comprises a hole transport layer, wherein the hole transport layer contains the hole transport material.
In order to better explain the technical solution of the present invention, the following description is made with reference to specific examples.
Example 1
A method for preparing a hole transport material, comprising the steps of:
s11, placing 10g of graphite alkyne powder and 425mg of potassium iodide into a crucible, adding 30mL of ultrapure water, and stirring at the rotating speed of 300rpm for 30min to obtain a graphite alkyne-potassium iodide mixed colloidal solution;
s12, heating and evaporating the graphite alkyne-potassium iodide mixed colloidal solution obtained in the step S11 in an environment at 80 ℃ to obtain a graphite alkyne-potassium iodide precursor;
s13, placing the graphite alkyne-potassium iodide precursor obtained in the step S12 in a semi-closed crucible, transferring the crucible into a muffle furnace, heating the crucible to 500 ℃ at a heating rate of 5 ℃/min in an argon atmosphere, preserving the temperature for 2 hours, and naturally cooling the crucible to room temperature after the reaction is finished to obtain the potassium modified and doped graphite alkyne.
Example 2
S21, placing 10g of graphite alkyne powder and 652mg of sodium iodide into a crucible, adding 30mL of ultrapure water, and stirring at the rotating speed of 300rpm for 30min to obtain a graphite alkyne-sodium iodide mixed colloidal solution;
s22, heating and evaporating the graphite alkyne-sodium iodide mixed colloidal solution obtained in the step S21 in an environment at 70 ℃ to obtain a graphite alkyne-sodium iodide precursor;
s23, placing the graphite alkyne-sodium iodide precursor obtained in the step S22 in a semi-closed crucible, transferring the crucible into a muffle furnace, heating the crucible to 600 ℃ at the heating rate of 5 ℃/min in the argon atmosphere, preserving the temperature for 2 hours, and naturally cooling the crucible to room temperature after the reaction is finished to obtain the sodium modified and doped graphite alkyne.
Example 3
S31, placing 10g of graphite alkyne powder and 610mg of potassium iodide into a crucible, adding 30mL of ultrapure water, and stirring at the rotating speed of 300rpm for 30min to obtain a graphite alkyne-potassium iodide mixed colloidal solution;
s32, heating and evaporating the graphite alkyne-potassium iodide mixed colloidal solution obtained in the step S31 in an environment at 80 ℃ to obtain a graphite alkyne-potassium iodide precursor;
s33, placing the graphite alkyne-potassium iodide precursor obtained in the step S32 in a semi-closed crucible, transferring the crucible into a muffle furnace, heating the crucible to 550 ℃ at the heating rate of 5 ℃/min in the argon atmosphere, preserving the temperature for 2 hours, and naturally cooling the crucible to room temperature after the reaction is finished to obtain the potassium modified and doped graphite alkyne.
Example 4
This embodiment provides a light emitting diode, from supreme down includes in proper order: the hole transport layer is composed of graphite alkyne doped with lithium, wherein the doping amount of lithium in the graphite alkyne is 2% according to 100% of the mass of the hole transport layer.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The hole transport material is characterized by consisting of graphdiyne and an alkali metal simple substance doped in the graphdiyne, wherein the alkali metal simple substance is doped in the graphdiyne through calcination treatment under an inert atmosphere;
the alkali metal simple substance accounts for 0.5-5% of the mass of the graphite alkyne, and the calcining temperature is 200-1500 ℃.
2. The hole transport material of claim 1, wherein the alkali metal is at least one of lithium, sodium, and potassium.
3. The hole transport material of claim 1, wherein the graphdiyne is at least one of graphdiyne nanospheres, graphdiyne nanowires, graphdiyne nanorods, graphdiyne nanocones, and graphdiyne nanospheres.
4. The hole transport material according to claim 1, wherein the temperature of the calcination treatment is 200-1500 ℃.
5. A method for preparing a hole transport material, comprising at least the steps of:
mixing the graphdiyne and the alkali metal precursor to prepare a graphdiyne-alkali metal precursor;
calcining the graphatidine-alkali metal precursor in an inert atmosphere to convert the alkali metal precursor into an alkali metal simple substance and doping the alkali metal simple substance on the graphatidine to obtain a hole transport material;
the alkali metal precursor accounts for 0.5-5% of the mass of the graphite alkyne, and the calcination temperature is 200-1500 ℃.
6. The method for producing a hole transporting material according to claim 5, wherein the alkali metal precursor is a halide of an alkali metal.
7. The method for producing a hole transporting material according to claim 6, wherein the halide of an alkali metal is at least one of lithium fluoride, lithium chloride, lithium bromide, lithium iodide, sodium fluoride, sodium chloride, sodium bromide, sodium iodide, potassium fluoride, potassium chloride, potassium bromide, and potassium iodide.
8. A light-emitting diode comprising a hole-transporting layer, wherein the hole-transporting layer contains the hole-transporting material according to any one of claims 1 to 4 or the hole-transporting material produced by the production method according to any one of claims 5 to 7.
9. The light-emitting diode according to claim 8, further comprising a light-emitting layer which is any one of a quantum light-emitting dot layer or an organic light-emitting layer.
10. A solar cell comprising a hole-transporting medium layer, wherein the hole-transporting medium layer comprises the hole-transporting material according to any one of claims 1 to 4 or the hole-transporting material prepared by the preparation method according to any one of claims 5 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711466430.2A CN109980088B (en) | 2017-12-28 | 2017-12-28 | Hole transport material and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711466430.2A CN109980088B (en) | 2017-12-28 | 2017-12-28 | Hole transport material and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109980088A CN109980088A (en) | 2019-07-05 |
| CN109980088B true CN109980088B (en) | 2021-08-13 |
Family
ID=67075296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711466430.2A Active CN109980088B (en) | 2017-12-28 | 2017-12-28 | Hole transport material and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109980088B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8192652B2 (en) * | 2010-05-12 | 2012-06-05 | National Chung Cheng University | Tin-doped indium oxide thin films and method for making same |
| CN204243085U (en) * | 2014-09-12 | 2015-04-01 | 中国科学院物理研究所 | Perovskite-based thin film solar cell |
| WO2016072806A2 (en) * | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | Perovskite nanocrystal particle light emitting body with core-shell structure, method for fabricating same, and light emitting element using same |
-
2017
- 2017-12-28 CN CN201711466430.2A patent/CN109980088B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109980088A (en) | 2019-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109962179B (en) | Thin film, preparation method thereof and QLED device | |
| CN109994607B (en) | Hole transport material and preparation method and application thereof | |
| CN111244295B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN109980129B (en) | Metal oxide, preparation method thereof and QLED device | |
| Cheng et al. | Boosted electroluminescence of perovskite light-emitting diodes by pinhole passivation with insulating polymer | |
| CN109980088B (en) | Hole transport material and preparation method and application thereof | |
| CN109994653B (en) | Preparation method of thin film and QLED device | |
| CN109935732B (en) | Hole transport material, QLED device and preparation method thereof | |
| US20240076197A1 (en) | Composite electron transport material and preparation method therefor, and light-emitting diode | |
| CN111384249B (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| CN111244298A (en) | Light-emitting device and display | |
| CN113120948B (en) | Nano material and preparation method and application thereof | |
| CN110739402B (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| CN113823568B (en) | Zinc oxide film and preparation method thereof, and quantum dot light emitting diode | |
| CN110752320A (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| CN113130631A (en) | Heterojunction nano material, preparation method thereof, thin film and quantum dot light-emitting diode | |
| CN112279949A (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| CN112390298B (en) | Modified metal oxide, preparation method thereof and quantum dot light-emitting diode | |
| CN111384253B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN110649136B (en) | Hole transport material and preparation method thereof and quantum dot light-emitting diode | |
| CN109935704A (en) | QLED device and preparation method thereof | |
| CN113130809B (en) | Composite electrode and preparation method thereof, and quantum dot light-emitting diode | |
| CN112420936B (en) | Nano material, preparation method and application thereof, and quantum dot light-emitting diode | |
| CN109935669B (en) | Preparation method of reduced graphene oxide, hole injection material and preparation method thereof | |
| CN112397658B (en) | Composite material, preparation method thereof and quantum dot light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 516006 TCL science and technology building, No. 17, Huifeng Third Road, Zhongkai high tech Zone, Huizhou City, Guangdong Province Applicant after: TCL Technology Group Co.,Ltd. Address before: 516006 Guangdong province Huizhou Zhongkai hi tech Development Zone No. nineteen District Applicant before: TCL RESEARCH AMERICA Inc. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |