CN109979644B - Conductive film preparation method and conductive film - Google Patents

Conductive film preparation method and conductive film Download PDF

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Publication number
CN109979644B
CN109979644B CN201910234048.1A CN201910234048A CN109979644B CN 109979644 B CN109979644 B CN 109979644B CN 201910234048 A CN201910234048 A CN 201910234048A CN 109979644 B CN109979644 B CN 109979644B
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fullerene
derivative
conductive film
base layer
conductive metal
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CN109979644A (en
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杨林
罗佳佳
黄金昌
白亚梅
李先杰
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/002—Auxiliary arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Abstract

The application provides a preparation method of a conductive film and the conductive film, and the method comprises the following steps: providing a substrate; forming a fullerene or derivative thereof on the substrate; drying the fullerene or derivative layer to form the fullerene or derivative base layer; soaking the fullerene or fullerene derivative base layer in a conductive metal ion solution for a first set time; and drying the soaked fullerene or fullerene derivative base layer to form the conductive film. This application is through filling electrically conductive metal particle in the gap and the recess at fullerene or its derivative basic unit, improves the electric conductivity of conducting film.

Description

Conductive film preparation method and conductive film
Technical Field
The present disclosure relates to conductive technologies, and particularly to a method for manufacturing a conductive film and a conductive film.
Background
Researchers have developed transparent electrodes based on other materials such as Indium Tin Oxide (ITO), such as two-dimensional materials (graphene), silver nanowires, polymers, etc. However, the transparent electrode based on such materials has low conductivity because of its many surface defects and easy charge trapping.
Taking the transparent electrode based on fullerene and derivatives thereof as an example, such materials can be applied to a substrate by spin coating or printing, etc. in a low-cost manner to form a conductive layer. However, in order to ensure a high transmittance, when the spin-coated thin film is thin, defects such as cracks and grooves are very easily generated on the surface of the thin film, resulting in a very low conductivity of the electrode, which affects the use of the transparent electrode.
Disclosure of Invention
The embodiment of the application provides a preparation method of a conductive film and the conductive film, which are used for solving the technical problem that the conductivity of the conventional transparent electrode is reduced.
The embodiment of the application provides a preparation method of a conductive film, which comprises the following steps:
providing a substrate;
forming a fullerene or derivative thereof on the substrate;
drying the fullerene or derivative layer to form the fullerene or derivative base layer;
soaking the fullerene or fullerene derivative base layer in a conductive metal ion solution for a first set time;
and drying the soaked fullerene or fullerene derivative base layer to form the conductive film.
In the method for manufacturing a conductive film of the present application, the surface of the fullerene or derivative thereof base layer has slits and grooves;
the method for soaking the fullerene or fullerene derivative base layer in the conductive metal ion solution for a first set time comprises the following steps:
and soaking the fullerene or derivative base layer in a conductive metal ion solution for a first set time to enable the conductive metal ions to fill the gaps and the grooves.
In the conductive film production method of the present application, the conductive metal ion solution is Au3+Solution, Ag+Solution and Cu2+One of the solutions.
In the method for preparing a conductive film of the present application, the conductive metal ion concentration of the conductive metal ion solution is between 0.1mg/ml and 10 mg/ml.
In the conductive film manufacturing method of the present application, the first set time is between 5 minutes and 10 minutes.
In the method for manufacturing a conductive film of the present application, the baking the soaked fullerene or fullerene derivative base layer to form the conductive film includes:
and placing the soaked fullerene or fullerene derivative base layer in a baking oven for baking treatment, so that the conductive metal ion solution is decomposed into conductive metal particles, and the conductive metal particles are filled in the gaps and the grooves to form the conductive film, wherein the baking temperature is a first set temperature, and the baking time is a second set time.
In the conductive film manufacturing method, the first set temperature is between 100 ℃ and 200 ℃; the second set time is between 30 minutes and 60 minutes.
In the method for manufacturing a conductive film of the present application, the baking of the fullerene or derivative layer thereof to form the fullerene or derivative base layer thereof includes;
and placing the fullerene or derivative layer in a baking oven for baking treatment so as to dry the fullerene or derivative layer, wherein the baking temperature is between 50 and 200 ℃.
The present application also relates to a conductive film, comprising:
a fullerene or derivative thereof base layer having a slit and a groove; and
and the conductive metal particles are filled in the gaps and the grooves.
In the conductive film of the present application, the conductive metal particles are one of Au, Ag, and Cu.
Compared with the conductive film in the prior art, the conductive film and the preparation method thereof have the advantages that the conductive metal particles are filled in the gaps and the grooves of the fullerene or derivative base layer thereof, so that the conductivity of the conductive film is improved; the technical problem that the conductivity of the existing transparent electrode is reduced is solved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required in the embodiments are briefly described below. The drawings in the following description are only some embodiments of the present application, and it will be obvious to those skilled in the art that other drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a flowchart of a method for manufacturing a conductive film according to an embodiment of the present application;
fig. 2 is another schematic flow chart of a method for manufacturing a conductive film according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a conductive film according to an embodiment of the present application.
Detailed Description
Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.
Referring to fig. 1, fig. 1 is a flow chart of a method for manufacturing a conductive film according to an embodiment of the present disclosure; fig. 2 is another schematic flow chart of a method for manufacturing a conductive film according to an embodiment of the present disclosure.
The preparation method of the conductive film comprises the following steps:
s11: providing a substrate;
s12: forming a fullerene or derivative thereof on the substrate;
s13: drying the fullerene or derivative layer to form the fullerene or derivative base layer;
s14: soaking the fullerene or fullerene derivative base layer in a conductive metal ion solution for a first set time;
s15: and drying the soaked fullerene or fullerene derivative base layer to form the conductive film.
The steps of the conductive film production method of the present application are specifically described as follows:
in step S11, a substrate 101 is provided.
Specifically, the substrate may be a flexible or rigid substrate, such as a Polyimide (PI) layer, a glass substrate, or the like; the buffer layer or the driving layer may be formed on the substrate by pvd (physical Vapor deposition) or the like. The driving layer includes a TFT layer. Subsequently, the process proceeds to step S12.
In step S12, a fullerene or derivative thereof layer 102 is formed on the substrate 101.
Specifically, the fullerene or derivative thereof 102 may be formed on the substrate 101 by coating or printing. The fullerene material can be, but is not limited to, [6,6] -phenyl (phenyl) -C61-butyl acid methyl ester and [6,6] -phenyl-C71-butyl acid methyl ester, and the thickness of the fullerene material is 0.01-1000 microns.
Wherein, when the thickness of the fullerene or derivative layer 102 is less than 0.01 micrometer, the fullerene or derivative layer 102 cannot form a film; when the thickness of the fullerene or derivative layer 102 is greater than 1000 micrometers, the material thickness is greater and the cost is higher. Thus, optionally, the fullerene or derivative thereof layer 102 has a thickness of one of 0.1 microns, 10 microns, 20 microns, 50 microns, 100 microns, 200 microns, 500 microns, and 1000 microns. Subsequently, the process proceeds to step S13.
In step S13, the fullerene or derivative thereof 102 is baked to form a fullerene or derivative thereof base layer 103.
Specifically, the fullerene or derivative layer 102 is placed in a baking oven for baking treatment, so that the fullerene or derivative layer 102 is dried to form the fullerene or derivative base layer 103. Wherein the baking temperature is between 50 ℃ and 200 ℃.
When the baking temperature is lower than 50 ℃, the baking effect on the fullerene or derivative layer 102 is low, and a long time is needed for baking; when the baking temperature is higher than 200 ℃, the material of the fullerene or derivative layer 102 may be damaged by the high temperature. The baking temperature is thus set between 50 degrees celsius and 200 degrees celsius. Optionally, the baking temperature may be one of 50 degrees celsius, 80 degrees celsius, 110 degrees celsius, 150 degrees celsius, 180 degrees celsius, and 200 degrees celsius.
After the first baking is finished, the surface of the base layer 103 of fullerene or its derivative has gaps a and grooves b. Subsequently, the process proceeds to step S14.
In step S14, the base layer 103 of fullerene or its derivative is immersed in a conductive metal ion solution for a first set time.
Specifically, the fullerene or derivative base layer 103 is placed in a conductive metal ion solution to be soaked for a first set time, so that the conductive metal ions fill the gaps a and the grooves b of the fullerene or derivative base layer 103.
Wherein the conductive metal ion solution is but not limited to Au3+Solution, Ag+Solution and Cu2+One of the solutions. Wherein the solvent can also be selected from dilute hydrochloric acid, nitromethanol or dilute nitric acid, etc. In this embodiment, the conductive metal ion solution is gold chloride (AuCl)3) The solution is illustrated by way of example (the subsequent steps are illustrated by way of example) and not by way of limitation.
The concentration of the conductive metal ions in the conductive metal ion solution is between 0.1mg/ml and 10 mg/ml. In this example, i.e. AuCl3AuCl in solution3The concentration of (B) is between 0.1mg/ml and 10 mg/ml. Wherein when AuCl3At a concentration of less than 0.1mg/ml, AuCl3Of Au3+The effect of filling the ions in the gap a and the groove b is slow and the time is long; when AuCl is used3At a concentration of more than 10mg/ml, AuCl3Of Au3+Too fast filling of ions in gaps a and grooves b, AuCl3Accumulation and aggregation are easily generated, and the filling effect is influenced. Thus optionally, AuCl3May be at a concentration of one of 0.1mg/ml, 0.2mg/ml, 0.5mg/ml, 1mg/ml, 2mg/ml, 5mg/ml and 10 mg/ml.
It will be appreciated that the effectiveness of the soaking will also depend on the time of soaking. In this embodiment, the first setting time is between 5 minutes and 10 minutes. When the first set time is less than 5 minutes, the soaking effect is poor; when the first set time is greater than 10 minutes, time is wasted. Alternatively, the first set time may be one of 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, and 10 minutes. Subsequently, the process proceeds to step S15.
In step S15, the soaked fullerene or fullerene derivative base layer 103 is baked to form the conductive film 104.
Specifically, the soaked fullerene or fullerene derivative base layer 103 is placed in a baking oven for baking treatment, so that AuCl is formed3Decomposed into conductive metal (Au) particles 105, and filled in the gaps a and the grooves b to form conductive films104. Wherein the baking temperature is a first set temperature, and the baking time is a second set time.
The baking step is a second baking of the fullerene or derivative base layer 103 for the purpose of, on the one hand, making the conductive metal ion solution (AuCl) in the gaps a and grooves b of the fullerene or derivative base layer 1033) The conductive metal (Au) particles 105 are decomposed and filled in the gap a and the groove b, so that the conductivity of the conductive film 104 is improved; another aspect is that the fullerene or derivative thereof base layer 103 is in a dry state.
In the embodiment, the first set temperature is between 100 degrees celsius and 200 degrees celsius. When the first set temperature is lower than 100 ℃, AuCl3Can not be decomposed; when the first predetermined temperature is higher than 200 ℃, the high temperature may damage the material of the fullerene or fullerene derivative base layer 103. Therefore, optionally, the first set temperature may be one of 100 degrees celsius, 110 degrees celsius, 130 degrees celsius, 150 degrees celsius, 170 degrees celsius, and 200 degrees celsius.
The second set time is between 30 minutes and 60 minutes. When the second set time is less than 30 minutes, AuCl3Insufficient decomposition and residue can occur; when the second set time is longer than 60 minutes, the time is too long, and the efficiency is affected. Alternatively, the second set time may be 30 minutes, 40 minutes, 50 minutes, and 60 minutes.
This completes the steps of the method for producing a conductive film of the present application.
Accordingly, referring to fig. 3, fig. 3 is a schematic structural diagram of a conductive film according to an embodiment of the present disclosure. The present application also relates to a conductive film 104, which conductive film 104 can be formed by the above-described method. The conductive film 104 includes a fullerene or a derivative thereof base layer 103 and conductive metal particles 105. The fullerene or derivative thereof base layer 103 has a slit a and a groove b. Conductive metal particles 105 are filled in the gap a and the groove b.
The conductive metal particles 105 are one of Au, Ag, and Cu, but are not limited thereto.
The conductive film 104 of the present application can be used for electronic devices such as a transparent electrode, an organic photoelectric device, a conductive electrode, and a liquid crystal display panel.
Compared with the conductive film in the prior art, the conductive film and the preparation method thereof have the advantages that the conductive metal particles are filled in the gaps and the grooves of the fullerene or derivative base layer thereof, so that the conductivity of the conductive film is improved; the technical problem that the conductivity of the existing transparent electrode is reduced is solved.
As described above, it will be apparent to those skilled in the art that various other changes and modifications can be made based on the technical solution and the technical idea of the present invention, and all such changes and modifications should fall within the protective scope of the appended claims.

Claims (9)

1. A method for preparing a conductive film is characterized by comprising the following steps:
providing a substrate;
forming a fullerene or derivative thereof on the substrate;
drying the fullerene or derivative layer to form the fullerene or derivative base layer, wherein gaps and grooves are formed on the surface of the fullerene or derivative base layer;
placing the fullerene or derivative base layer in a conductive metal ion solution to be soaked for a first set time so that the gaps and the grooves are filled with conductive metal ions;
and drying the soaked fullerene or fullerene derivative base layer to form the conductive film.
2. The method of claim 1, wherein the conductive metal ion solution is Au3 +Solution, Ag+Solution and Cu2+One of the solutions.
3. The method of claim 1, wherein the conductive metal ion solution has a conductive metal ion concentration of 0.1mg/ml to 10 mg/ml.
4. The method of claim 1, wherein the first set time is between 5 minutes and 10 minutes.
5. The method of claim 1, wherein the baking the soaked fullerene or fullerene derivative base layer to form the conductive film comprises:
and placing the soaked fullerene or fullerene derivative base layer in a baking oven for baking treatment, so that the conductive metal ion solution is decomposed into conductive metal particles, and the conductive metal particles are filled in the gaps and the grooves to form the conductive film, wherein the baking temperature is a first set temperature, and the baking time is a second set time.
6. The method for manufacturing a conductive film according to claim 5, wherein the first predetermined temperature is between 100 degrees Celsius and 200 degrees Celsius; the second set time is between 30 minutes and 60 minutes.
7. The method for manufacturing a conductive film according to claim 4, wherein the baking step is a step of baking the fullerene or derivative layer to form the fullerene or derivative base layer, including;
and placing the fullerene or derivative layer in a baking oven for baking treatment so as to dry the fullerene or derivative layer, wherein the baking temperature is between 50 and 200 ℃.
8. A conductive film characterized by being produced by the conductive film production method according to any one of claims 1 to 7; the conductive film includes:
a fullerene or derivative thereof base layer having a slit and a groove; and
and the conductive metal particles are filled in the gaps and the grooves.
9. The conductive film of claim 8, wherein the conductive metal particles are one of Au, Ag, and Cu.
CN201910234048.1A 2019-03-26 2019-03-26 Conductive film preparation method and conductive film Active CN109979644B (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159885A (en) * 2010-02-02 2011-08-18 Toshiba Corp Method of manufacturing thin film

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CN103011124B (en) * 2009-01-16 2016-03-30 清华大学 The preparation method of carbon nano-tube compound film
CN103556123B (en) * 2013-10-30 2016-06-08 武汉科技大学 Material with carbon element that a kind of metal nanoparticle is modified and preparation method thereof
CN103606420B (en) * 2013-11-08 2016-08-17 复旦大学 The method preparing conductive metal film
CN104355303A (en) * 2014-10-22 2015-02-18 合肥杰事杰新材料股份有限公司 Carbon film with high conductivity and heat conduction and forming process therefor
CN105085937B (en) * 2015-07-20 2018-03-30 深圳市华星光电技术有限公司 Fullerene/PEDOT:The preparation method of PSS mixed solutions and there is fullerene/PEDOT:The preparation method of the substrate of PSS composite transparent conductive films
CN107808708A (en) * 2017-12-06 2018-03-16 武汉华星光电半导体显示技术有限公司 Nano Silver nesa coating and preparation method thereof and touch-screen

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JP2011159885A (en) * 2010-02-02 2011-08-18 Toshiba Corp Method of manufacturing thin film

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