CN109972199A - The method for rapidly entering seeding process when producing monocrystalline silicon using big thermal field vertical pulling method - Google Patents
The method for rapidly entering seeding process when producing monocrystalline silicon using big thermal field vertical pulling method Download PDFInfo
- Publication number
- CN109972199A CN109972199A CN201711458846.XA CN201711458846A CN109972199A CN 109972199 A CN109972199 A CN 109972199A CN 201711458846 A CN201711458846 A CN 201711458846A CN 109972199 A CN109972199 A CN 109972199A
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- monocrystalline silicon
- vertical pulling
- silicon
- seeding process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The method for rapidly entering seeding process when the production monocrystalline silicon disclosed by the invention using big thermal field vertical pulling method, after melting silicon materials, upper axis tungsten wire rope drives seed crystal rotation, silica crucible reversely rotates, simultaneously declining axis tungsten wire rope makes seed crystal be in contact with molten silicon, then the power for adjusting heater finds seeding temperature, when heater maintain a certain power for a period of time and seed crystal it is unblown when, then enter steady temperature state；Seed crystal is dropped to the monocrystalline silicon grown before the position fusing of primary seed crystal in steady temperature state, then accelerates silica crucible and reversely rotates speed, into seeding process.The method that the present invention rapidly enters seeding process when producing monocrystalline silicon using big thermal field vertical pulling method, which can greatly shorten, looks for the warm time, and guarantee that silicon temperature is melted during seeding slowly to be reduced, so as to avoid seed crystal because molten silicon temperature change fastly caused by thermal stress and surface tension can lead to the problem of dislocation, achieve the effect that rapidly enter seeding, shorten invalid working hour.
Description
Technical field
The invention belongs to vertical pulling methods to produce monocrystalline silicon technical field, and in particular to a kind of to utilize big thermal field vertical pulling method production list
The method of seeding process is rapidly entered when crystal silicon.
Background technique
Vertical pulling method produces in monocrystalline silicon technique, and simplified process is in the silica crucible that former silicon material is fitted into single crystal growing furnace furnace,
By furnace body it is closed after be passed through protection gas, will expect that block is heated to 1400 DEG C or so fusings by given heater power, by seeding,
Shouldering, turn shoulder, be isometrical, ending etc. operation, complete crystal pulling process.
In order to save vertical pulling method production monocrystalline silicon cost, improve vertical pulling method production production capacity and inventory, general use is expanded
Big thermal field increases the mode of charge, as vertical pulling method production monocrystalline silicon thermal field charge increases, the reaction of temperature of thermal field
It is slack-off therewith.To improve seeding speed, low temperature seeding is generally used, leads to that seed crystal during temperature is looked for be easy to tie because temperature is low
Thermal stress and surface tension effects caused by the temperature change of brilliant, seed crystal and molten silicon is big and generate dislocation, produced during seeding
Raw dislocation can directly result in the disconnected rib of shouldering, eventually lead to and look for warm time length low with shouldering success rate.
Summary of the invention
The purpose of the present invention is to provide rapidly enter seeding process when a kind of production monocrystalline silicon using big thermal field vertical pulling method
Method, avoid seed crystal because molten silicon temperature change fastly caused by thermal stress and surface tension can lead to the problem of dislocation.
The technical scheme adopted by the invention is that: seeding process is rapidly entered when producing monocrystalline silicon using big thermal field vertical pulling method
Method, after melting silicon materials, when looking for temperature during vertical pulling method produces monocrystalline silicon, upper axis tungsten wire rope drives seed crystal rotation, quartz
Crucible reversely rotates, and simultaneously declines axis tungsten wire rope and seed crystal is in contact with molten silicon, and the power for then adjusting heater is found
Seeding temperature, when the heater maintain a certain power for a period of time and seed crystal it is unblown when, then enter steady temperature state；In steady temperature
The seed crystal is dropped to the monocrystalline silicon grown before the position fusing of primary seed crystal in state, it is reversed then to accelerate silica crucible
Rotation speed, into seeding process.
The features of the present invention also characterized in that
When looking for temperature during vertical pulling method produces monocrystalline silicon, the upper axis tungsten wire rope drive seed crystal rotation speed be 10 turns/
Min, it is 8 turns/min that silica crucible, which reversely rotates speed,.
When the heater maintains a certain power 20min and unblown seed crystal, then enter steady temperature state.
The position 20min that the seed crystal is dropped to primary seed crystal in steady temperature state, the list for being grown before melting
Crystal silicon.
Into before seeding process, the reverse rotation speed of the silica crucible is adjusted to 9 turns/min.
The beneficial effects of the present invention are: the present invention rapidly enters seeding process when producing monocrystalline silicon using big thermal field vertical pulling method
Method can greatly shorten and look for the warm time, and can guarantee that silicon temperature is melted during seeding slowly to be reduced, to avoid
Seed crystal because molten silicon temperature change fastly caused by thermal stress and surface tension can lead to the problem of dislocation, reach rapidly enter seeding,
The effect for shortening invalid working hour further improves vertical pulling method production production capacity and operational efficiency, save the cost.
Specific embodiment
Below by specific embodiment, the present invention is described in detail.
The method for rapidly entering seeding process when the production monocrystalline silicon provided by the invention using big thermal field vertical pulling method includes such as
Lower step: after melting silicon materials, when looking for temperature during vertical pulling method produces monocrystalline silicon, upper axis tungsten wire rope drives seed crystal according to 10
Turn/the speed of min rotation, silica crucible then rotates according to the velocity reversal of 8 turns/min, simultaneously declines axis tungsten wire rope and make seed
Brilliant to be in contact with molten silicon, the power for then adjusting heater finds seeding temperature, when the heater maintains a certain power 20min
And seed crystal it is unblown when, then illustrate that the power of heater is suitable introduction temperature, subsequently into steady temperature state；In steady warm shape
The position that the seed crystal drops to primary seed crystal is stopped to the monocrystalline silicon grown before 20min is used to melt in state, is then accelerated
It is 9 turns/min that silica crucible, which reversely rotates speed, that is, enters seeding process.Under melted silicon temperature is slow during seeding at this time
Drop, dislocation can be generated by avoiding thermal stress and surface tension effects caused by seed crystal quickly changes because of the temperature of molten silicon, be reached
The purpose for rapidly entering seeding, shortening invalid working hour, improving shouldering success rate further increases vertical pulling method production production capacity, saves
Cost.
Claims (5)
- The method for rapidly entering seeding process when 1. producing monocrystalline silicon using big thermal field vertical pulling method, which is characterized in that melting silicon materials Afterwards, when looking for temperature during vertical pulling method produces monocrystalline silicon, upper axis tungsten wire rope drives seed crystal rotation, and silica crucible reversely rotates, together When decline upper axis tungsten wire rope seed crystal be in contact with molten silicon, the power searching seeding temperature of heater is then adjusted, when described Heater maintain a certain power for a period of time and seed crystal it is unblown when, then enter steady temperature state；By the seed in steady temperature state Crystalline substance drops to the monocrystalline silicon that the position fusing of primary seed crystal is grown before, then accelerates silica crucible and reversely rotates speed, enters Seeding process.
- The method for rapidly entering seeding process when 2. producing monocrystalline silicon using big thermal field vertical pulling method as described in claim 1, Be characterized in that, when looking for temperature during vertical pulling method produces monocrystalline silicon, the upper axis tungsten wire rope drive seed crystal rotation speed be 10 turns/ Min, it is 8 turns/min that silica crucible, which reversely rotates speed,.
- The method for rapidly entering seeding process when 3. producing monocrystalline silicon using big thermal field vertical pulling method as described in claim 1, It is characterized in that, when the heater maintains a certain power 20min and unblown seed crystal, then enters steady temperature state.
- The method for rapidly entering seeding process when 4. producing monocrystalline silicon using big thermal field vertical pulling method as described in claim 1, It is characterized in that, the seed crystal is dropped to the position 20min of primary seed crystal in steady temperature state, the list for being grown before melting Crystal silicon.
- The method for rapidly entering seeding process when 5. producing monocrystalline silicon using big thermal field vertical pulling method as claimed in claim 4, It is characterized in that, into before seeding process, the reverse rotation speed of the silica crucible is 9 turns/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711458846.XA CN109972199A (en) | 2017-12-28 | 2017-12-28 | The method for rapidly entering seeding process when producing monocrystalline silicon using big thermal field vertical pulling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711458846.XA CN109972199A (en) | 2017-12-28 | 2017-12-28 | The method for rapidly entering seeding process when producing monocrystalline silicon using big thermal field vertical pulling method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109972199A true CN109972199A (en) | 2019-07-05 |
Family
ID=67074597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711458846.XA Pending CN109972199A (en) | 2017-12-28 | 2017-12-28 | The method for rapidly entering seeding process when producing monocrystalline silicon using big thermal field vertical pulling method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109972199A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102242397A (en) * | 2011-07-15 | 2011-11-16 | 西安华晶电子技术股份有限公司 | Process for producing Czochralski silicon single crystal |
| CN104328495A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
| WO2015075864A1 (en) * | 2013-11-22 | 2015-05-28 | 信越半導体株式会社 | Method for producing silicon single crystal |
-
2017
- 2017-12-28 CN CN201711458846.XA patent/CN109972199A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102242397A (en) * | 2011-07-15 | 2011-11-16 | 西安华晶电子技术股份有限公司 | Process for producing Czochralski silicon single crystal |
| WO2015075864A1 (en) * | 2013-11-22 | 2015-05-28 | 信越半導体株式会社 | Method for producing silicon single crystal |
| CN104328495A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
Non-Patent Citations (2)
| Title |
|---|
| 潘红娜等: "《晶体硅太阳能电池制备技术》", 30 October 2017 * |
| 陈文革等: "《大学生生产实习教程——材料科学与工程大专业用》", 30 May 2014, 黄河水利出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102321913B (en) | Thermal system and process for controlling 8-inch zone melting silicon monocrystals | |
| CN104372399B (en) | A kind of monocrystal silicon ending method and monocrystal silicon preparation method | |
| CN202208779U (en) | Ingot furnace | |
| CN101580963A (en) | SAPMAC method for preparing sapphire single-crystal with size above 300mm | |
| CN106319620B (en) | A kind of crystal pulling method of pulling of crystals | |
| CN102220633B (en) | Production technology of semiconductor grade silicon single crystal | |
| CN104109904A (en) | Seeding method of sapphire crystal growth kyropoulos method | |
| CN107761163B (en) | Czochralski monocrystalline silicon rapid ending method | |
| CN104099660B (en) | The big kilogram of rotation of number sapphire crystal is expanded shoulder stabilization and draws high method | |
| CN104131339A (en) | Preparation method of polysilicon chip | |
| CN101974779A (en) | Method for preparing (110) float zone silicon crystal | |
| CN103343387B (en) | A kind of polycrystalline silicon ingot or purifying furnace and casting ingot method thereof | |
| CN102560624A (en) | Whole single crystal furnace | |
| CN103952759A (en) | Method and device for preparing calcium fluoride crystal by using a method of declining crucible with built-in heating body | |
| CN103451718B (en) | Can quantity-produced zone melting furnace device and process control method thereof | |
| CN103422165A (en) | Polycrystalline silicon and preparation method thereof | |
| CN103132142A (en) | Polycrystalline silicon ingot and manufacturing method thereof | |
| CN109972200A (en) | Continuous pulling silicon single crystal growing method | |
| CN103436951A (en) | Drawing method of float-zone silicon single crystals | |
| CN109972199A (en) | The method for rapidly entering seeding process when producing monocrystalline silicon using big thermal field vertical pulling method | |
| CN104480527A (en) | Full-power control ingot casting process for polycrystalline silicon ingot furnace | |
| CN107268080B (en) | A kind of pulling growth method of the major diameter without double ridge monocrystalline silicon | |
| JP5509189B2 (en) | Method for producing single crystal silicon | |
| CN102719883B (en) | Semiconductor monocrystal silicon production process | |
| CN103397378A (en) | Preparation method of polycrystalline silicon ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190705 |
|
| RJ01 | Rejection of invention patent application after publication |