CN109962131A - 一种新型白光led器件的制备方法 - Google Patents
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Abstract
本发明涉及一种新型白光LED器件的制备方法，包括以下步骤：制备AlN晶体材料；对AlN晶体材料进行切割、打磨和抛光，制成表面平整的AlN薄片；对制成的AlN薄片进行清洗，清洗后对其进行烘烤以除去表面的水气与溶剂残留物；在AlN薄片上图形化电极并蒸镀金属电极；最后再进行氮气氛下的退火处理，制成新型白光LED器件。本发明直接采用气相传输法制备的AlN晶体材料作为功能材料，在晶体上制备电极后直接通电发光。该方法实现单一材料的白光输出，无需荧光粉的二次转换，因此器件结构更加简单紧凑，单晶状态的AlN功能层也能承载更大的功率密度。由于利用宽禁带半导体AlN材料禁带内的缺陷发光，使器件的发射光谱十分丰富，可覆盖整个可见光区域，且光色品质出色。
Description
技术领域
本发明涉及LED发光元器件制造领域，具体而言，涉及一种新型白光LED器件的制备方法。
背景技术
随着人们对环境的日益重视，节能环保这一新兴概念也在LED(Light EmittingDiode，发光二极管)行业开始升温。而以GaN(氮化镓)基LED为基础器件的白光LED技术也得到了迅猛发展。以GaN蓝光LED芯片作为激发源的白光LED单灯光源效率已达到130流明/瓦以上，远远超过了普通节能灯的光效，LED技术已开始全面进入通用照明市场。随着GaN基LED应用范围的进一步扩大，对LED器件发光效率的要求也越来越高，各种新的半导体材料、新的芯片制作工艺、新的器件结构不断推陈出新，以满足光源市场对LED光源的各种需求。
目前，传统的GaN基LED白光光源的主要发光机理是用蓝光或紫外LED激发荧光粉混合形成白光。该方法的主要缺陷在于GaN基外延膜的生长工艺复杂，设备昂贵，同时，荧光粉的使用也限制了器件的性能。
发明内容
针对上述问题，本发明提供一种直接采用AlN晶体材料作为功能材料，在晶体上制备电极后通电发光新型白光LED器件的制备方法，包括以下步骤：
一种新型白光LED器件的制备方法，包括以下步骤：
制备AlN晶体材料；
对AlN晶体材料进行切割、打磨和抛光，制成表面平整的AlN薄片；
对制成的AlN薄片进行清洗，清洗后对其进行烘烤以除去表面的水气与溶剂残留物；
在AlN薄片上图形化电极并蒸镀金属电极；
最后再进行氮气氛下的退火处理，制成新型白光LED器件。
进一步的，所述AlN晶体材料通过物理气相传输法制备。
进一步的，所述AlN晶体材料为铅锌矿结构的块状材料。
进一步的，制备AlN晶体材料在单一的氮气保护下进行。
进一步的，清洗时依次在丙酮、酒精、去离子水中进行超声清洗。
进一步的，图形化电极时，电极位于AlN薄片同侧的表面。
进一步的，所述AlN薄片的厚度为0.4mm~0.6mm。
进一步的，所述金属电极的材料选自铂、铜、铝、铟、镍以及铬。
一种白光LED器件，包括：作为单一发光材料的AlN薄片，其厚度为0.4mm~0.6mm且表面平整；以及直接形成在所述AlN薄片的其中一个平整的表面上的至少两个电极。
本发明提供了新型白光LED器件的制备方法，直接采用气相传输法制备的AlN晶体材料作为功能材料，在晶体上制备电极后直接通电发光。该方法实现单一材料的白光输出，无需荧光粉的二次转换，因此器件结构更加简单紧凑，单晶状态的AlN功能层也能承载更大的功率密度。由于利用宽禁带半导体AlN材料禁带内的缺陷发光，丰富的缺陷能级导致器件的发射光谱十分丰富，能完全覆盖整个可见光区域，光色品质也非常出色。本发明制备简单，工艺成本低。
附图说明
图1为本发明提供的新型白光LED器件的制备方法实施例步骤示意图。
具体实施方式
为了方便本领域的技术人员了解本发明的技术内容，下面结合附图及实施例对本发明做进一步的详细说明。
如图1所示，一较佳实施例中，本发明的新型白光LED器件的制备方法主要包括以下步骤：
S1，制备AlN（氮化铝）晶体材料，优选采用物理气相传输法（PVT），物理气相传输法可在晶体的生长制备过程中通过适当的参数调节，控制晶体的晶格结构、缺陷种类和缺陷密度，且PVT生长炉远较生长GaN薄膜的MOCVD（金属有机化合物化学气相沉淀）低廉。本实施例中，通过物理气相传输法在2300℃的氮气氛下生长制备出铅锌矿结构的AlN晶体材料，该AlN晶体材料具有丰富的缺陷能级，能够发射宽光谱的白光。
S2，对所得到的AlN晶体材料进行切割，并打磨抛光，得到厚度为0.4mm~0.6mm且表面平整的AlN晶体薄片。本实施例中，综合考虑成本和器件性能，AlN晶体薄片优选为厚度为0.5mm的方形薄片，其他实施例中，AlN晶体薄片可为其他规则形状，优选为轴对称图形。
S3，对准备好的AlN晶体薄片进行清洗，依次用丙酮，酒精，去离子水进行超声清洗，每次超声清洗5~10分钟，清洗结束后把样品放置在120℃的热板上烘烤20~30分钟，除去表面的水气与溶剂残留物。
S4，使用图形化工艺在AlN薄片同侧表面形成对称的电极图形，并蒸镀金属电极材料。其中，图形化工艺可采用例如光刻、漏板、压印或丝网印刷，电极材料选自铜、铝、铟、铂，可为其中一种或几种配合使用，电极材料中还包括过渡层材料镍或铬或镍和铬，过渡层材料增加了电极的粘附性。电极整体厚度为100nm。本实施例中，采用边长约50um的正方形电极，对称设置在方形AlN晶体薄片的一个表面上，并靠近方形AlN晶体薄片的短边。当AlN晶体薄片为其他规则的轴对称图形时，电极轴对称设置在AlN晶体薄片的对称轴两侧。
S5，对制备好的器件进行500℃下4~6小时的褪火处理，并采用氮气作为保护气体，褪火后即完成了基于AlN晶体的新型白光LED器件的制备。
本发明还提供了一种白光LED器件，其使用上述AlN薄片作用单一发光材料，其厚度为0.4mm~0.6mm且至表面平整；以及直接形成在所述AlN薄片的其中一个平整的表面上的至少两个电极。
虽然对本发明的描述是结合以上具体实施例进行的，但是，熟悉本技术领域的人员能够根据上述的内容进行许多替换、修改和变化、是显而易见的。因此，所有这样的替代、改进和变化都包括在附后的权利要求的精神和范围内。
Claims (9)
1.一种新型白光LED器件的制备方法，其特征在于，包括以下步骤：
制备AlN晶体材料；
对AlN晶体材料进行切割、打磨和抛光，制成表面平整的AlN薄片；
对制成的AlN薄片进行清洗，清洗后对其进行烘烤以除去表面的水气与溶剂残留物；
在AlN薄片上图形化电极并蒸镀金属电极；
最后再进行氮气氛下的退火处理，制成新型白光LED器件。
2.根据权利要求1所述的新型白光LED器件的制备方法，其特征在于，所述AlN晶体材料通过物理气相传输法制备。
3.根据权利要求2所述的新型白光LED器件的制备方法，其特征在于，所述AlN晶体材料为铅锌矿结构的块状材料。
4.根据权利要求3所述的新型白光LED器件的制备方法，其特征在于，制备AlN晶体材料在单一的氮气保护下进行。
5.根据权利要求1所述的新型白光LED器件的制备方法，其特征在于，清洗时依次在丙酮、酒精、去离子水中进行超声清洗。
6.根据权利要求1或3所述的新型白光LED器件的制备方法，其特征在于，图形化电极时，电极位于AlN薄片同侧的表面。
7.根据权利要求6所述的新型白光LED器件的制备方法，其特征在于，所述AlN薄片的厚度为0.4mm~0.6mm。
8.根据权利要求6所述的新型白光LED器件的制备方法，其特征在于，所述金属电极的材料选自铂、铜、铝、铟，还包括过渡材料镍或铬。
9.一种白光LED器件，其特征在于,包括：
作为单一发光材料的AlN薄片，其厚度为0.4mm~0.6mm且表面平整；以及
直接形成在所述AlN薄片的其中一个平整的表面上的至少两个电极。
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|---|---|---|---|---|
| WO2020173149A1 (zh) * | 2019-02-28 | 2020-09-03 | 惠州学院 | 一种新型白光led器件的制备方法 |
| CN112599646A (zh) * | 2020-12-25 | 2021-04-02 | 惠州学院 | 一种全光谱光电双通道器件及其制备方法和应用 |
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| CN109461804A (zh) * | 2018-10-16 | 2019-03-12 | 深圳大学 | 新型白光发光元器件及其制备方法 |
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| WO2015089432A1 (en) * | 2013-12-12 | 2015-06-18 | Terahertz Device Corporation | Electrical contacts to light-emitting diodes for improved current spreading and injection |
| CN109962131A (zh) * | 2019-02-28 | 2019-07-02 | 惠州学院 | 一种新型白光led器件的制备方法 |
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Non-Patent Citations (2)
| Title |
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| GE LIU 等: ""Broadband White-Light Emission from Alumina Nitride Bulk Single Crystals"", 《ACS PHOTONICS》 * |
| GE LIU等: ""Luminescence characterizations of freestanding bulk single crystalline aluminum nitride towards optoelectronic application"", 《CRYSTENGCOMM》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020173149A1 (zh) * | 2019-02-28 | 2020-09-03 | 惠州学院 | 一种新型白光led器件的制备方法 |
| CN112599646A (zh) * | 2020-12-25 | 2021-04-02 | 惠州学院 | 一种全光谱光电双通道器件及其制备方法和应用 |
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