CN109962001A - A kind of operation method and plasma reactor of plasma chamber - Google Patents
A kind of operation method and plasma reactor of plasma chamber Download PDFInfo
- Publication number
- CN109962001A CN109962001A CN201711432453.1A CN201711432453A CN109962001A CN 109962001 A CN109962001 A CN 109962001A CN 201711432453 A CN201711432453 A CN 201711432453A CN 109962001 A CN109962001 A CN 109962001A
- Authority
- CN
- China
- Prior art keywords
- plasma
- chamber
- gas
- silicon
- radio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 61
- 210000002381 plasma Anatomy 0.000 claims abstract description 146
- 238000004140 cleaning Methods 0.000 claims abstract description 60
- 229920000642 polymer Polymers 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 230000003595 spectral effect Effects 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 95
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 239000012495 reaction gas Substances 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 239000004615 ingredient Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000004087 circulation Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009623 Bosch process Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- -1 fluorine hydrocarbon Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of operation method of plasma chamber and plasma reactors, include: silicon deep hole etching process and without wafer cleaning process, alternate cycles execute etch step in etching process and side wall protects step, until the etched hole on the wafer in plasma cavity reaches target depth, at least one silicon deep hole etching process is completed to move back except wafer, it carries out without wafer cleaning process, chamber alternate cycles are exposed in the first plasma to remove the polymer containing COF and the second plasma to remove siliceous polymer, to remove the indoor layering reunion/cured polymer of chamber, further include end point determination step: during carrying out clean using the first and second plasmas, persistently detect the intensity that the spectral line of emission of carbon and silicon is represented in the first and second plasmas, when monitoring carbon When being lower than preset value with the spectral line of emission intensity of silicon, terminate without wafer cleaning process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of operation method of plasma chamber and it is equal from
Sub- reactor.
Background technique
Apparatus for processing plasma, by introducing to vacuum plasma chamber containing appropriate etching agent or deposit source gas
Reaction gas, then again to the plasma chamber apply RF energy, with dissociation reaction gas generate plasma, be used to
The substrate surface being placed in plasma chamber room is processed.
Generated some polymer (polymers), can be attached to plasma chamber in the treatment process of plasma
On indoor each device.Therefore, it usually needs after taking out the substrate for completing processing out of plasma chamber room to plasma
Chamber is cleaned to remove the polymer deposited.
For example, current plasma chamber is when carrying out deep hole silicon etching (TSV) to wafer, using conventional Bosch work
It during skill, can cause etching efficiency slack-off with the radio frequency time, so as to cause chip output problem and shorten maintenance time,
The more serious production that will affect chip board.
The study found that etching, cleaning and deposition cycle few then 100 times, how then several every time in Bosch technical process
Hundred circulations, are equal to 1 second wherein the execution time of each step is respectively less than, and to improve production efficiency, improve etched hole pattern.?
In Bosch circulation technology, it is clipped in the cleaning of of short duration (less than 1 second) in etching and deposition step, is mainly passed through oxygen, with
Remove extra polymer.So can not only remove the siliceous pollution of plasma reaction chamber cylinder accumulation by such etch step
Object.It needs after executing one or more Bosch process cycles, be passed through clean gas without wafer cleaning process while applying
HFRF power is added to form cleaning plasma to reaction chamber.It can be in plasma chamber during bosch process cycles
Interior polymer of the formation containing COF and the polymer containing Si, this combined pollutant are difficult to be removed.If without wafer cleaning mistake
The cleaning capacity of cleaning plasma i.e. corrosive power are too strong in journey, can damage semiconductor equipment while completing cleaning
Interior various components, such as electrostatic chuck, if on the other hand cleaning energy without the cleaning plasma during wafer cleaning
Power is too weak, will cause the accumulation of the polymer containing COF.Especially in Bosch technical process, polymer containing COF with contain Si
Polymer layering reunite together, the distribution of polymer of each region is uneven in plasma chamber room, in this way if being
The ingredient of simple selection optimization cleaning plasma and distribution, are difficult to remove in the reunion of complicated state/cured polymer,
Guarantee that the intracavitary components of plasma reaction are not lost simultaneously.
Pass through SF6In polymer process of the corona treatment containing Si, the polymer for the Si for needing to remove, however due to containing
The polymer core of COF is then passing through O so being difficult to have thoroughly removed the polymer containing Si for Si2Corona treatment contains
During the polymer of COF, although removing the polymer containing COF, lower Si can be left, left Si can be
It is etched in Bosch etching process, influences the etch rate of chip, when so as to cause chip output problem and shortening maintenance
Between.
Summary of the invention
The object of the present invention is to provide a kind of operation method of plasma chamber and plasma reactor, using repeatedly following
The different plasma of ring can thoroughly remove reunion/cured polymer of complicated state.
In order to achieve the goal above, the present invention is achieved by the following technical solutions:
A kind of operation method of plasma chamber, its main feature is that, include: silicon deep hole etching process and without wafer cleaning process,
Alternate cycles execute etch step in etching process and side wall protects step, the etching on the wafer in plasma cavity
Hole reaches target depth,
It completes at least one silicon deep hole etching process to move back except wafer, carry out without wafer cleaning process, chamber alternate cycles are sudden and violent
It is exposed in the first plasma and the second plasma, to remove the indoor layering reunion/cured polymer of chamber,
Wherein first plasma contains to remove the polymer containing COF, second plasma to remove
The polymer of silicon, the method further include end point determination step: clean using the progress of the first and second plasmas
In the process, the intensity that the spectral line of emission of carbon and silicon is represented in first and second plasma is persistently detected, when monitoring carbon
When being lower than preset value with the spectral line of emission intensity of silicon, terminate without wafer cleaning process.
Preferably, first plasma is converted by the first clean gas, second plasma
It is to be converted by the second clean gas.
Preferably, first clean gas is O2, second clean gas is SF6。
Preferably, etch step and side wall of the plasma chamber in silicon deep hole etching process protect holding for step
The row time, the duration of first plasma and the second plasma was greater than 1 second less than 3 seconds less than 1 second.
Preferably, the plasma chamber applies in etch step and side wall protection step in silicon deep hole etching process
Radio-frequency power to the pedestal of the plasma chamber is greater than the first radio-frequency power, is applied in the no wafer cleaning process
The radio-frequency power of the pedestal is lower than first radio-frequency power.
A kind of plasma reactor, its main feature is that, include: a reaction chamber, a gas switching part, with reaction chamber phase
Even, the gas switching part supplies the first and second clean gas to the reaction chamber for alternate cycles, while described
Plasma reactor further includes the first and second radio frequency, the first radio-frequency power supply supply HFRF power to reaction chamber, and second
Radio-frequency power supply supplies low frequency radio frequency power supply to the pedestal of reaction chamber, and the pedestal is for fixing wafer to be processed；
The gas of the input reaction chamber of the gas switching part is controlled, while controlling the first radio-frequency power supply and the second radio-frequency power supply
The radio-frequency power of reaction chamber is inputted, generates the first cleaning plasma and the second cleaning plasma, institute to generate cycle alternation
The first cleaning plasma is stated to remove organic polymer, the second plasma to remove and silicon,
The plasma reactor further includes an optical detection component, for detecting the first cleaning plasma and the second cleaning
Ingredient in plasma, when detect the intensity of the carbon spectral line of emission in the first cleaning plasma lower than the first preset value, and
And the second generation the intensity of spectral line of silicon in cleaning plasma when being lower than the second preset value, stop supplying described first to reaction chamber
And clean gas.
First clean gas is O2, second clean gas is SF6。
Preferably, plasma reactor further includes an inductance coil, and first radio-frequency power supply is supplied to the inductance coil
Answer radio-frequency power.
The gas switching part is also connected to the first reaction gas and the second reaction gas, and first reaction gas is used
In etching silicon, the second reaction gas is used to form protective film on the through-hole that etching is formed, wherein the first reaction gas includes
SF6, the second reaction gas includes fluorocarbons or fluorine hydrocarbon.
Compared with prior art, the present invention having the advantage that
The present invention removes reunion/cured polymer of complicated state, improves core using different plasmas is repeatedly recycled
The etch rate of piece solves the problems, such as chip output and extends board maintenance time.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the operation method of plasma chamber of the present invention；
Fig. 2 is a kind of structure chart of plasma reactor of the present invention.
Specific embodiment
The present invention is further elaborated by the way that a preferable specific embodiment is described in detail below in conjunction with attached drawing.
To solve the problems, such as to be difficult in the prior art to remove the reunion of complicated state/cured polymer, the application's
Inventor proposes a kind of operation method of plasma chamber after study.Below to the operation method of the plasma chamber
It is described in detail.
As shown in Figure 1, a kind of flow chart of the operation method of plasma chamber of the present invention, below in conjunction with Fig. 2 shows
This method is described in detail in the structure chart of plasma reactor.
Step S101 executes silicon deep hole etch step, and alternate cycles execute etch step in etching process and side wall is protected
Step is protected, until the etched hole on the wafer in plasma cavity reaches target depth；
Step S102 is executed without wafer cleaner step, is completed at least one silicon deep hole etching process and is moved back except wafer, carries out without crystalline substance
Circle cleaning process, chamber alternate cycles is exposed in the first plasma and the second plasma, to remove indoor point of chamber
Layer reunion/cured polymer,
Wherein first plasma contains to remove the polymer containing COF, second plasma to remove
The polymer of silicon；
Step S103 executes end point determination step, lasting to examine during carrying out clean using the first and second plasmas
The intensity that the spectral line of emission of carbon and silicon is represented in first and second plasma is surveyed, when the spectral line of emission for monitoring carbon and silicon
When intensity is lower than preset value, terminate without wafer cleaning process.
Specifically, a reaction gas spout is set at the top of plasma chamber, which passes through the first jet pipe
20 input the first reaction gas into reaction chamber, which can be etching gas, while in plasma chamber
A second reaction gas spout is arranged in top side wall, which inputs second into reaction chamber instead by the second jet pipe 21
Gas is answered, which can be deposition gases, and alternate cycles input etching gas, deposition into plasma chamber room
Gas, execute silicon deep hole etching process in etch step and deposition step, the etch step and deposition step duration it is small
In 1 second.
After wafer to be processed has executed Bosch etching technics circulation, by conventional wafer operation instrument, by wafer from
Pedestal 120 in plasma chamber room is removed, what the first plasma in the embodiment of the present invention was converted by the first clean gas,
Second plasma is converted by the second clean gas；First clean gas can for a kind of gas or multiple gases mixing and
It may be that a kind of gas or multiple gases mix at, the second clean gas, it is preferable that in the embodiment of the present invention
One clean gas selects O2, the second clean gas selection SF6。
If the first clean gas only includes a kind of gas, an admission line (such as the first air jet pipe can be passed through
Road 20 or the second jet pipe 21) gas is passed through inside plasma chamber 100；If the first clean gas includes
This multiple gases can be then passed through inside plasma chamber 100, to guarantee this by multiple gases by a plurality of admission line
A little gases are via plasma chamber 100 is passed through, i.e., these gases just mix after entering 100 inside of plasma chamber；
In addition, these gases can also be passed through 100 inside of plasma chamber if the first clean gas includes multiple gases
Before mixed, then the gas after the mixing is passed through by the first jet pipe 20 or the second jet pipe 21
The first clean gas in 100 steps of plasma chamber is to be converted into plasma after entering inside reaction chamber.Tool
Body, the radio-frequency voltage of certain power can be applied inside plasma chamber 100, cleaned by the radio-frequency voltage by first
Gas is converted into the first cleaning plasma；Similarly second clean gas can also be converted into the second cleaning of plasma
Body；
During cleaning, exhaust apparatus can be kept to be constantly in open state, it on the one hand can be by the first cleaning of plasma
Plasma chamber is discharged constantly to add in gaseous product after body reacts with the deposit inside plasma chamber 100
On the other hand the progress of fast cleaning process and raising cleaning effect can also keep having inside plasma chamber 100 certain
Pressure to meet the needs of cleaning process, that is, the unlatching journey of control exhaust apparatus can also be passed through in the embodiment of the present invention one
Degree passes through the capacity control plasma chamber for controlling exhaust apparatus to control the pressure inside plasma chamber 100
Pressure inside 100.
The first above-mentioned clean gas is mainly used for removing the polymer containing COF in plasma chamber room, and above-mentioned the
Two clean gas are mainly used for removing the polymer containing Si in plasma chamber room, air inlet and reaction principle and the first cleaning
Gas is similar, does not also elaborate here, using the first clean gas of alternate cycles, the second clean gas, i.e., the first cleaning
The indoor layering reunion of gas → second the first clean gas of clean gas ... → second clean gas removing chamber/cured poly-
Close object
It should be noted that the execution of the removing of the removing and the second clean gas of the first clean gas can in the embodiment of the present invention
With continuous, that is, the first clean gas executed and has been immediately performed the second clean gas later；First clean gas and the second cleaning
The execution of gas is also possible to interval, that is, has executed after the first clean gas every executing the second cleaning gas again for a period of time
Body herein during interval, can keep exhaust apparatus 12 to be constantly in exhaust condition certainly, in this way can be by the first cleaning
Reaction chamber is all discharged in the gaseous products generated in gas, and then the cleaning efficiency of the second clean gas can be improved.
The duration for executing above-mentioned first plasma and the second plasma was greater than 1 second less than 3 seconds.
It should be noted that above-mentioned plasma chamber is applied in etch step and deposition step in silicon deep hole etching process
The radio-frequency power for being added to the pedestal of the plasma chamber is greater than the first radio-frequency power, applies in above-mentioned no wafer cleaning process
Radio-frequency power to the pedestal is lower than first radio-frequency power.
As shown in Fig. 2, a kind of structure chart of plasma reactor comprising reaction chamber 100, interior reaction chamber 100 includes base
Seat 120, interior pedestal includes lower electrode.It is fixed with electrostatic chuck 121 at the top of pedestal, substrate to be handled is set on electrostatic chuck,
One adjusting ring 105 is centered around 122 periphery of electrostatic chuck 121 or substrate, by setting to adjusting ring material and shape, size
Meter can improve the field distribution in substrate edge region, realize the improvement to etching homogeneity.It include insulation at the top of reaction chamber 100
Insulation windows made of material realize the sealing to reaction top.Include at least one set of inductance coil above insulation windows, passes through conducting wire
It is connected to a high frequency RF power source 42 and is used to form and maintains the plasma of high concentration, high frequency RF power source exports 13Mhz
Radio-frequency power supply.One biasing radio-frequency power supply 40 is wired to a match circuit 50, and having in match circuit 50 can
Impedance, the RF energy after match circuit is adjusted are output to the lower electrode in pedestal, bias radio frequency electrical by adjusting
Source adjusts the energy size for being incident on the plasma of substrate surface.It further include that an exhaust outlet is connected to pumping very below reaction chamber
Sky pumps, the intracavitary reaction gas of extraction, and pressure control pendulum valve 130 is additionally provided on exhaust outlet.Further include at the top of reaction chamber
One reaction gas spout, the spout are connected to by the first jet pipe 20 and gas switch valve V22 to the first reaction gas
Body input terminal 12, gas source E1, E2, E3 of multiple types pass through valve V13, V14, V15 respectively and connect with respective gas pipeline
To the first reaction gas input terminal 12.Reaction chamber top side wall further includes a second reaction gas spout, which passes through the
Two jet pipes 21 are connected to the second reaction gas output end 11 by a gas switch valve V21.The gas source of multiple types
D1, D2 pass through valve V11, V12 respectively and respective gas pipeline is connected to the second reaction gas input terminal 11.
Gas switch valve V22 is controlled, the first clean gas is inputted to the first jet pipe 20, controls high frequency RF power source
42 input the radio-frequency power of reaction chamber with biasing radio-frequency power supply 40, and the first clean gas generates first cleaning etc. after entering reaction chamber
Gas ions；Gas switch valve V22 is closed, gas switch valve V21 is opened, to the second jet pipe 21 input the second cleaning gas
Body, control high frequency RF power source 42 and the radio-frequency power for biasing the input reaction chamber of radio-frequency power supply 40, the second clean gas enters anti-
The second cleaning plasma is generated after answering chamber 100, control gas switch valve opens/closes, and alternate cycles first and second are clear
For clean gas to reaction chamber, cycle alternation generates the first cleaning plasma and the second cleaning plasma.
It in a particular embodiment, should in order to determine that polymer removes the terminal of the polymer containing COF and the polymer containing Si
Plasma reactor further includes an optical detection component, for detecting the first cleaning plasma and the second cleaning plasma
In ingredient, when detecting the intensity of the carbon spectral line of emission in the first cleaning plasma lower than the first preset value, and second is clear
When generation the intensity of spectral line of silicon is lower than the second preset value in clean plasma, stop supplying described first and the to reaction chamber 100
Two clean gas.
It should be noted that first reaction gas can also be inputted into reaction chamber by the first jet pipe 20, this
One reaction gas can be the etching gas for etching silicon；It is inputted into reaction chamber for carving by the second jet pipe 21
The second reaction gas that protective film is formed on the through-hole formed is lost, wherein the first reaction gas includes SF6, the second reaction gas packet
Include fluorocarbons or fluorine hydrocarbon.
Plasma reactor embodiment of the invention is able to achieve each step in the embodiment of the method for Fig. 1, to avoid repeating,
This is repeated no more.
In conclusion the present invention a kind of operation method and plasma reactor of plasma chamber, using multiple circulation
Different plasmas can thoroughly remove reunion/cured polymer of complicated state.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (9)
1. a kind of operation method of plasma chamber is, characterized by comprising: silicon deep hole etching process and without wafer cleaner mistake
Journey, alternate cycles execute etch step in etching process and side wall protects step, until on the wafer in plasma cavity
Etched hole reaches target depth,
It completes at least one silicon deep hole etching process to move back except wafer, carry out without wafer cleaning process, chamber alternate cycles are sudden and violent
It is exposed in the first plasma and the second plasma, to remove the indoor layering reunion/cured polymer of chamber,
Wherein first plasma contains to remove the polymer containing COF, second plasma to remove
The polymer of silicon, the method further include end point determination step: clean using the progress of the first and second plasmas
In the process, the intensity that the spectral line of emission of carbon and silicon is represented in first and second plasma is persistently detected, when monitoring carbon
When being lower than preset value with the spectral line of emission intensity of silicon, terminate without wafer cleaning process.
2. the operation method of plasma chamber as described in claim 1, which is characterized in that first plasma is
It is converted by the first clean gas, second plasma is converted by the second clean gas.
3. the operation method of plasma chamber as claimed in claim 2, which is characterized in that first clean gas is
O2, second clean gas is SF6。
4. the operation method of plasma chamber as described in any one of claims 1-3, which is characterized in that the plasma
The execution time of etch step of the chamber in silicon deep hole etching process and side wall protection step less than 1 second, described first it is equal from
The duration of daughter and the second plasma was greater than 1 second less than 3 seconds.
5. the operation method of the described in any item plasma chambers of claim 1-3, which is characterized in that the plasma chamber
Room etch step and side wall in silicon deep hole etching process protect penetrating for the pedestal that the plasma chamber is applied in step
Frequency power is greater than the first radio-frequency power, and the radio-frequency power of the pedestal is applied in the no wafer cleaning process lower than described the
One radio-frequency power.
6. a kind of plasma reactor is, characterized by comprising: a reaction chamber, a gas switching part, with reaction chamber phase
Even, the gas switching part supplies the first and second clean gas to the reaction chamber for alternate cycles, while described
Plasma reactor further includes the first and second radio frequency, the first radio-frequency power supply supply HFRF power to reaction chamber, and second
Radio-frequency power supply supplies low frequency radio frequency power supply to the pedestal of reaction chamber, and the pedestal is for fixing wafer to be processed；
The gas of the input reaction chamber of the gas switching part is controlled, while controlling the first radio-frequency power supply and the second radio-frequency power supply
The radio-frequency power of reaction chamber is inputted, generates the first cleaning plasma and the second cleaning plasma, institute to generate cycle alternation
The first cleaning plasma is stated to remove organic polymer, the second plasma to remove and silicon,
The plasma reactor further includes an optical detection component, for detecting the first cleaning plasma and the second cleaning
Ingredient in plasma, when detect the intensity of the carbon spectral line of emission in the first cleaning plasma lower than the first preset value, and
And the second generation the intensity of spectral line of silicon in cleaning plasma when being lower than the second preset value, stop supplying described first to reaction chamber
And clean gas.
7. plasma reactor as claimed in claim 6, which is characterized in that first clean gas is O2, described
Two clean gas are SF6。
8. plasma reactor as claimed in claim 6, which is characterized in that it further include an inductance coil, first radio frequency
Power supply is to the inductance coil radiofrequency supplier power.
9. benefit require 6 described in plasma reactor, which is characterized in that the gas switching part is also connected to the first reaction gas
Body and the second reaction gas, first reaction gas are used for the through-hole formed in etching for etching silicon, the second reaction gas
Upper formation protective film, wherein the first reaction gas includes SF6, the second reaction gas includes fluorocarbons or fluorine nytron
Object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711432453.1A CN109962001A (en) | 2017-12-26 | 2017-12-26 | A kind of operation method and plasma reactor of plasma chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711432453.1A CN109962001A (en) | 2017-12-26 | 2017-12-26 | A kind of operation method and plasma reactor of plasma chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109962001A true CN109962001A (en) | 2019-07-02 |
Family
ID=67022110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711432453.1A Pending CN109962001A (en) | 2017-12-26 | 2017-12-26 | A kind of operation method and plasma reactor of plasma chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109962001A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11495602B1 (en) | 2021-08-12 | 2022-11-08 | Changxin Memory Technologies, Inc. | Method and device for determining fabrication chamber |
| WO2023015582A1 (en) * | 2021-08-12 | 2023-02-16 | 长鑫存储技术有限公司 | Method and apparatus for determining preparation chamber |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507502A (en) * | 2001-05-04 | 2004-06-23 | 拉姆研究公司 | Duo-step plasma cleaning of chamber residues |
| US20040200498A1 (en) * | 2003-04-08 | 2004-10-14 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate processing chamber |
| CN102398887A (en) * | 2010-09-14 | 2012-04-04 | 中微半导体设备(上海)有限公司 | Deep hole silicon etching method |
| CN104508803A (en) * | 2012-08-27 | 2015-04-08 | 东京毅力科创株式会社 | Plasma processing method and plasma processing device |
-
2017
- 2017-12-26 CN CN201711432453.1A patent/CN109962001A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507502A (en) * | 2001-05-04 | 2004-06-23 | 拉姆研究公司 | Duo-step plasma cleaning of chamber residues |
| US20040200498A1 (en) * | 2003-04-08 | 2004-10-14 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate processing chamber |
| CN102398887A (en) * | 2010-09-14 | 2012-04-04 | 中微半导体设备(上海)有限公司 | Deep hole silicon etching method |
| CN104508803A (en) * | 2012-08-27 | 2015-04-08 | 东京毅力科创株式会社 | Plasma processing method and plasma processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11495602B1 (en) | 2021-08-12 | 2022-11-08 | Changxin Memory Technologies, Inc. | Method and device for determining fabrication chamber |
| WO2023015582A1 (en) * | 2021-08-12 | 2023-02-16 | 长鑫存储技术有限公司 | Method and apparatus for determining preparation chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111837222B (en) | Plasma processing method and plasma processing apparatus | |
| US9601319B1 (en) | Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process | |
| US11011388B2 (en) | Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching | |
| CN106601612B (en) | System and method for ultra-high selectivity nitride etch | |
| CN105390389B (en) | Contact clean in high aspect ratio structure | |
| US9355922B2 (en) | Systems and methods for internal surface conditioning in plasma processing equipment | |
| US9978606B2 (en) | Methods for atomic level resolution and plasma processing control | |
| US9966240B2 (en) | Systems and methods for internal surface conditioning assessment in plasma processing equipment | |
| TWI618135B (en) | Processing systems and methods for halide scavenging | |
| TW201715610A (en) | Method and apparatus for anisotropic tungsten etching | |
| US20080230008A1 (en) | Plasma species and uniformity control through pulsed vhf operation | |
| CN108630578B (en) | Ultra-high selectivity nitride etch to form FinFET devices | |
| US20220319856A1 (en) | Etching isolation features and dense features within a substrate | |
| KR20180121829A (en) | In situ clean using high vapor pressure aerosols | |
| TW201442108A (en) | In-situ metal residue clean | |
| CN109962001A (en) | A kind of operation method and plasma reactor of plasma chamber | |
| KR102356777B1 (en) | Gas supply method and semiconductor manufacturing apparatus | |
| US20140299576A1 (en) | Plasma processing method and plasma processing apparatus | |
| JP2011243635A (en) | Remote cleaning method for deposition chamber | |
| US10418250B2 (en) | Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method | |
| TW201828360A (en) | High aspect ratio etch | |
| KR100775591B1 (en) | Plasma generating apparatus | |
| TWI757320B (en) | Method for conditioning silicon part | |
| JPH09330913A (en) | Method and device for generating plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190702 |
|
| RJ01 | Rejection of invention patent application after publication |