CN109961875B - Insulating clamping type semi-conducting belt and manufacturing process thereof - Google Patents
Insulating clamping type semi-conducting belt and manufacturing process thereof Download PDFInfo
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- CN109961875B CN109961875B CN201711402031.XA CN201711402031A CN109961875B CN 109961875 B CN109961875 B CN 109961875B CN 201711402031 A CN201711402031 A CN 201711402031A CN 109961875 B CN109961875 B CN 109961875B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/22—Sheathing; Armouring; Screening; Applying other protective layers
- H01B13/227—Pretreatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
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Abstract
The invention discloses an insulation clamping type semi-conducting belt and a manufacturing process thereof. The semi-conductive belt comprises a conductive shielding layer and insulating layers arranged on two sides of the conductive shielding layer, wherein the conductive shielding layer is conductive carbon black colloid, and the conductive carbon black colloid comprises the following components in percentage by mass: silica gel: 30% -41%; nano hollow carbon tube: 8% -10%; ethyl ester: 50% -58%; curing agent: 1 to 2 percent. The insulating layers are arranged on the two sides of the conductive shielding layer, so that the cable can be prevented from electric leakage, electric conduction and electric shock under the condition that the cable is damaged and broken; the middle conductive carbon black colloid is made of non-metallic material, and the surface resistance is tested<100 omega, volume resistance<1x103Omega, can effectively homogenize the electric field, can be widely applied to the inner layer lapping shielding of ultrahigh voltage cables and high voltage mining cables, and is more uniquely applied to cables manufactured by non-metallic conductors.
Description
Technical Field
The invention relates to the technical field of cable manufacturing, in particular to an insulating clamping type semi-conducting belt and a manufacturing process thereof.
Background
In the national standard of power cables, for crosslinked polyethylene insulated power cables of 500 square millimeters and 10KV and above, a layer of semiconductive material is required to be wrapped outside the conductor to achieve the effect of homogenizing the electric field.
The prior art has the defects that the shielding tape is very easy to conduct electricity, get an electric shock and leak electricity under the condition of contacting a power supply because the surface of the tape is not provided with an insulating protective layer under the condition that the cable is damaged and broken.
In addition, in special cables which are specially required to have no metal components as conductors and shielding layers, for example, the existing metal material wrapping belt cannot meet the requirements by ensuring good shielding effect and ensuring the buried cable which cannot be detected by a metal detector.
Disclosure of Invention
The invention aims to provide an insulation clamping type semi-conducting belt and a manufacturing process thereof, the semi-conducting belt has the characteristics of surface insulation, internal conductive shielding, heat resistance, light specific gravity, flexibility, easy wrapping and the like, and the semi-conducting belt does not contain metal components and can be used for manufacturing special cables with corresponding requirements.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the utility model provides an insulating centre gripping type semi-conductive area, includes conductive shielding layer and sets up the insulating layer in conductive shielding layer both sides, its characterized in that, conductive shielding layer is the conductive carbon black colloid, the conductive carbon black colloid comprises following component by mass percent: silica gel: 30% -41%; nano hollow carbon tube: 8% -10%; ethyl ester: 50% -58%; curing agent: 1 to 2 percent.
The invention further improves the scheme as follows:
in order to further obtain a good insulation effect, the insulation layer is nylon woven fabric, the warp of the nylon woven fabric is 75-1000dtex nylon filament with the density of 30-60 pieces/cm; the weft yarn of the nylon weaving cloth adopts 75-1000dtex nylon filament with the density of 30-60 pieces/cm.
The invention also provides a manufacturing process of the insulation clamping type semi-conducting belt, which comprises the following steps:
1) adding 30-41% of silica gel, 8-10% of nano hollow carbon tube, 50-58% of ethyl ester and 1-2% of curing agent into a high-speed stirrer according to mass percent, and stirring to obtain conductive carbon black colloid;
2) uniformly coating conductive carbon black colloid on one surface of the insulating layer by using a coating machine, wherein the coating amount of the conductive carbon black colloid is 100-1000g/m2;
3) The coating surface of the insulating layer is treated by a scraper, so that the thickness of the conductive carbon black colloid layer is ensured to be 0.1-0.3 mm.
4) Drying the insulating layer coated with the conductive carbon black colloid on the single surface;
5) the coating surfaces of two insulating layers coated with conductive carbon black colloid on one surface are mutually bonded by using a dry compounding machine as a bonding agent to obtain the insulating clamping type semi-conductive belt.
The invention further improves the scheme as follows:
in order to further improve the insulation effect, the insulation layer is nylon woven fabric, the warp of the nylon woven fabric is 75-1000dtex nylon filament with the density of 30-60 pieces/cm; the weft yarn of the nylon weaving cloth adopts 75-1000dtex nylon filament with the density of 30-60 pieces/cm. The nylon fabric woven by the material ensures that the nylon fabric mesh is light-proof and the insulation effect is ensured.
In order to further ensure the stirring effect, the impeller of the high-speed stirrer is an all-plastic impeller, the rotating speed is 500-800 r/m, and the stirring time is 30 min. The plastic impeller has better wear resistance and corrosion resistance, and can efficiently stir the conductive carbon black colloid.
Compared with the prior art, the invention has the beneficial effects that:
according to the insulating clamping type semi-conducting belt, the insulating layers are arranged on the two sides of the conductive shielding layer, so that the electric leakage, the electric conduction and the electric shock of the cable can be avoided under the condition that the cable is damaged and broken; the middle conductive carbon black colloid is made of non-metallic material, and the surface resistance is tested<100 omega, volume resistance<1x103Omega, can effectively homogenize the electric field, can be widely applied to ultra-high voltage cables and high-voltage mining cable inner layer wrapping shielding, is more uniquely applied to cables manufactured by non-metallic conductors, has special cables with shielding, radiation resistance, ultraviolet resistance and other requirements, can be used for manufacturing military optical cables (cannot be detected by a metal detector), is used for military underground industrial shelters, and is used for oil storage pipelines and air pipesAnd (4) protecting and preventing lightning outside the road and the like.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
Fig. 1 is a schematic view of the structure of an insulation-clamped semiconductive belt of the present invention.
Fig. 2 is a flow chart of a process for manufacturing an insulation clip-type semiconductive tape according to the present invention.
Shown in the figure: 1. nylon weaving; 2. conductive carbon black colloid.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Fig. 1 is a schematic view of the structure of an insulation-clamped semiconductive belt of the present invention.
Fig. 2 is a flow chart of a process for manufacturing an insulation clip-type semiconductive tape according to the present invention.
The first embodiment is as follows:
an insulating clamping type semi-conducting belt comprises two layers of nylon woven cloth 1 and a conductive carbon black colloid layer 2 arranged in the middle of the nylon woven cloth 1.
The nylon weaving 1 adopts 75dtex nylon filament as warp and weft, the density is 60 pieces/cm, the nylon weaving 1 mesh light-proof is ensured, and the insulation effect is ensured.
The conductive carbon black colloid layer 2 comprises the following components in percentage by mass: 30% of silica gel, 10% of nano hollow carbon tube, 58% of ethyl ester and 2% of curing agent, wherein the curing agent adopts benzoyl peroxide.
The specific manufacturing method is as follows:
1) using 75dtex nylon filament as warp and weft through a loom, wherein the density is 60 pieces/cm, and preparing nylon woven cloth to ensure light-tight;
2) respectively adding 30% of silica gel, 10% of nano hollow carbon tube, 58% of ethyl ester and 2% of benzoyl peroxide into a high-speed stirrer, and stirring for 30min to obtain a conductive carbon black colloid, wherein the high-speed stirrer adopts an all-plastic impeller, and the stirring speed is 500 rpm;
3) applying a coating machine, adding 20kg of conductive carbon black colloid into the coating machine, and uniformly coating the conductive carbon black colloid 2 on one side of the nylon woven fabric 1, wherein the coating amount is 100g/m2;
4) Scraping off the redundant conductive carbon black colloid 2 by using a scraper, adjusting the gap of the scraper to 0.1mm, and ensuring that the thickness of the conductive carbon black colloid layer is 0.1 mm;
5) putting the nylon woven cloth 1 coated with the conductive carbon black colloid 2 on one surface into an oven, and drying for 3min at 115 ℃ to obtain a single-sided semi-conductive nylon belt, wherein one side of the semi-conductive nylon belt is insulated and can not be broken down within 3KV and 5 seconds, the other side of the nylon belt has shielding conductivity, and the surface resistance is within the range of surface resistance<100 omega, volume resistance of colloid conducting layer<1X103Ω。
6) Putting the two single-sided semiconductive nylon belts into a dry compounding machine, using conductive carbon black colloid 2 as an adhesive, and bonding the coating surfaces of the two single-sided semiconductive nylon belts to obtain the semiconductive belts with insulating upper and lower surfaces and good shielding and conduction interlayers.
According to the insulating clamping type semi-conducting belt provided by the embodiment, the upper surface and the lower surface are made of nylon woven fabric materials, so that the insulating effect is good, and the insulating clamping type semi-conducting belt can not be broken down within 3KV and 5 seconds; a shielding conductive layer made of conductive carbon black colloid material and having surface resistance<100 omega, volume resistance of colloid conducting layer<1X103Omega, can effectively homogenize the electric fieldThe semi-conductive tape is heat-resistant, light in specific gravity, soft and easy to wrap, has no metal component, and can be used for manufacturing special cables with corresponding requirements.
Example two:
an insulating clamping type semi-conducting belt comprises two layers of nylon woven cloth 1 and a conductive carbon black colloid layer 2 arranged in the middle of the nylon woven cloth 1.
The nylon woven fabric 1 adopts 1000dtex nylon filament as warp and weft, the density is 30 pieces/cm, the nylon woven fabric 1 mesh light-proof is ensured, and the insulation effect is ensured.
The conductive carbon black colloid layer 2 comprises the following components in percentage by mass: 41% of silica gel, 8% of nano hollow carbon tube, 50% of ethyl ester and 1% of curing agent, wherein the curing agent adopts benzoyl peroxide.
The specific manufacturing method is as follows:
1) using 1000dtex nylon filament as warp and weft through a loom, wherein the density is 30 pieces/cm, and preparing nylon woven cloth to ensure light-tight;
2) respectively adding 41% of silica gel, 8% of nano hollow carbon tube, 50% of ethyl ester and 1% of benzoyl peroxide into a high-speed stirrer, and stirring for 30min to obtain a conductive carbon black colloid, wherein the high-speed stirrer adopts an all-plastic impeller, and the stirring speed is 800 rpm;
3) applying a coating machine, adding 30kg of conductive carbon black colloid into the coating machine, and uniformly coating the conductive carbon black colloid 2 on one side of the nylon woven fabric 1, wherein the coating amount is 1000g/m2;
4) Scraping off the redundant conductive carbon black colloid 2 by using a scraper, adjusting the gap of the scraper to 0.3mm, and ensuring that the thickness of the conductive carbon black colloid layer is 0.3 mm;
5) putting the nylon woven cloth 1 coated with the conductive carbon black colloid 2 on one surface into an oven, and drying for 5min at 115 ℃ to obtain a single-sided semi-conductive nylon belt, wherein one side of the semi-conductive nylon belt is insulated and can not be broken down within 3KV and 5 seconds, the other side of the nylon belt has shielding conductivity, and the surface resistance is within the range of surface resistance<100 omega, volume resistance of colloid conducting layer<1X103Ω。
6) Putting the two single-sided semiconductive nylon belts into a dry compounding machine, using conductive carbon black colloid 2 as an adhesive, and bonding the coating surfaces of the two single-sided semiconductive nylon belts to obtain the semiconductive belts with insulating upper and lower surfaces and good shielding and conduction interlayers.
Example three:
an insulating clamping type semi-conducting belt comprises two layers of nylon woven cloth 1 and a conductive carbon black colloid layer 2 arranged in the middle of the nylon woven cloth 1.
The nylon woven cloth 1 adopts 500dtex nylon filament as warp and weft, the density is 45 pieces/cm, the nylon woven cloth 1 mesh light-proof is ensured, and the insulation effect is ensured.
The conductive carbon black colloid layer 2 comprises the following components in percentage by mass: 35% of silica gel, 9% of nano hollow carbon tube, 55% of ethyl ester and 1% of curing agent, wherein the curing agent adopts benzoyl peroxide.
The specific manufacturing method is as follows:
1) using 500dtex nylon filament as warp and weft through a loom, wherein the density is 45 pieces/cm, and preparing nylon woven cloth to ensure light-tight;
2) respectively adding 35% of silica gel, 9% of nano hollow carbon tube, 55% of ethyl ester and 1% of benzoyl peroxide into a high-speed stirrer, and stirring for 30min to obtain a conductive carbon black colloid, wherein the high-speed stirrer adopts an all-plastic impeller, and the stirring speed is 650 rpm;
3) applying a coating machine, adding 30kg of conductive carbon black colloid into the coating machine, and uniformly coating the conductive carbon black colloid 2 on one side of the nylon woven fabric 1, wherein the coating amount is 500g/m2;
4) Scraping off the redundant conductive carbon black colloid 2 by using a scraper, adjusting the gap of the scraper to 0.2mm, and ensuring that the thickness of the conductive carbon black colloid layer is 0.2 mm;
5) putting the nylon woven cloth 1 coated with the conductive carbon black colloid 2 on one surface into an oven, and drying for 4min at 115 ℃ to obtain a single-sided semi-conductive nylon belt, wherein one side of the semi-conductive nylon belt is insulated and can not be broken down within 3KV and 5 seconds, the other side of the nylon belt has shielding conductivity, and the surface resistance is within the range of surface resistance<100 omega, volume resistance of colloid conducting layer<1X103Ω。
6) Putting the two single-sided semiconductive nylon belts into a dry compounding machine, using conductive carbon black colloid 2 as an adhesive, and bonding the coating surfaces of the two single-sided semiconductive nylon belts to obtain the semiconductive belts with insulating upper and lower surfaces and good shielding and conduction interlayers.
In the description of the present invention, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (3)
1. The utility model provides an insulating centre gripping type semi-conductive area, includes conductive shielding layer and sets up the insulating layer in conductive shielding layer both sides, its characterized in that, conductive shielding layer is the conductive carbon black colloid, the conductive carbon black colloid comprises following component by mass percent: silica gel: 30% -41%; nano hollow carbon tube: 8% -10%; ethyl ester: 50% -58%; curing agent: 1% -2%, the insulating layer is nylon woven fabric, the warp of the nylon woven fabric is 75-1000dtex nylon filament, and the density is 30-60 pieces/cm; the weft yarn of the nylon weaving cloth adopts 75-1000dtex nylon filament with the density of 30-60 pieces/cm.
2. A process for manufacturing an insulation-clamped semiconductive belt according to claim 1, which comprises the steps of:
1) adding 30-41% of silica gel, 8-10% of nano hollow carbon tube, 50-58% of ethyl ester and 1-2% of curing agent into a high-speed stirrer according to mass percent, and stirring to obtain conductive carbon black colloid;
2) uniformly coating conductive carbon black colloid on one surface of the insulating layer by using a coating machine, wherein the coating amount of the conductive carbon black colloid is 100-1000g/m2;
3) Processing the coating surface of the insulating layer by using a scraper to ensure that the thickness of the conductive carbon black colloid layer is 0.1-0.3 mm;
4) drying the insulating layer coated with the conductive carbon black colloid on the single surface;
5) the coating surfaces of two insulating layers coated with conductive carbon black colloid on one surface are mutually bonded by using a dry compounding machine and using the conductive carbon black colloid as a bonding agent, so that the insulating clamping type semi-conductive belt is obtained.
3. The process for manufacturing an insulation-clamping-type semiconductive belt according to claim 2, wherein the impeller of the high-speed agitator is an all-plastic impeller, the rotating speed is 500-800 rpm, and the agitating time is 30 min.
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