CN109959681A - A kind of gas-sensitive sensor device and its preparation method and application - Google Patents
A kind of gas-sensitive sensor device and its preparation method and application Download PDFInfo
- Publication number
- CN109959681A CN109959681A CN201711401255.9A CN201711401255A CN109959681A CN 109959681 A CN109959681 A CN 109959681A CN 201711401255 A CN201711401255 A CN 201711401255A CN 109959681 A CN109959681 A CN 109959681A
- Authority
- CN
- China
- Prior art keywords
- gas
- film material
- sensor device
- sensitive sensor
- nanocrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/227—Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The present invention provides a kind of gas-sensitive sensor device and its preparation method and application, the gas-sensitive sensor device includes the central part and inductive signal hop to gas sensitization, wherein, the central part includes the nanocrystal film material of graphene, stannic disulfide or molybdenum disulfide.The intercrystalline of the nanometer film material conducts electric current by tunneling mechanism.Gas-sensitive sensor device of the invention realizes the highly sensitive sensing of gas.
Description
Technical field
The present invention relates to sensory fields, and in particular to gas sensing field more particularly to a kind of gas-sensitive sensor device and its
Preparation method and application.
Background technique
Sensing technology is the Men Duoxue for obtaining information about from natural information source, and being handled it (transformation) and identification
Section intersect modern science and engineering technology, it be related to sensor (also known as energy converter), information processing and the planning and designing of identification,
The activities such as exploitation, system/construction, test, application and evaluation improvement.
Wherein, sensor is a kind of detection device, can experience measured information, and the information that can will be experienced, press
Certain rule is for conversion into electric signal or the information output of other required forms, to meet the transmission of information, processing, storage, show
Show, record and control etc. and requires.
Gas sensor is then a kind of sensor for detecting specific gas, and application specifically includes that CO gas
Detection, the detection of methane gas, the detection of coal gas, the detection of freon (R11, R12), the detection of ethyl alcohol, human body mouth in expiration
The smelly detection etc. of accent.
Existing gas sensor generally includes semiconductor gas sensor, catalytic combustion type gas sensor and electrochemistry
Gas sensor etc. has that sensitivity is low.
Summary of the invention
Therefore, the purpose of the present invention is to solve problem above, a kind of gas sensing device of high sensitivity is provided.
The present invention provides a kind of gas-sensitive sensor device, the gas-sensitive sensor device includes the central part to gas sensitization
With inductive signal hop, which is characterized in that the central part includes the nanometer of graphene, stannic disulfide or molybdenum disulfide
Crystalline film material.
After applying voltage to the gas-sensitive sensor device, the intercrystalline of the nanocrystal film material passes through tunneling mechanism
Conduct electric current.
The gas-sensitive sensor device provided according to the present invention, in order to further increase the sensitivity of the gas-sensitive sensor device, institute
Stating nanocrystal film material can be patterned nanocrystal film material.Wherein, the patterning refers at least
Nanoscale rule or irregular surface structure are generated on one-dimensional direction.
In the present invention, patterned purpose is the edge area for increasing nanocrystal film material, is treated to increase
The absorption of detection gas, therefore the specific pattern of patterned surface is not particularly limited, for example, can be ribbon, net
The diversified forms such as shape, honeycomb.The patterning that nanocrystal film material can be realized with multiple technologies, such as electron beam lithography, purple
Outer photoetching, laser direct-writing, laser ablation, plasma etching, methods of micro-mechanics, the art of printing of micro- contact based on scanning probe
Deng.
Preferably, the nanocrystal film material is graphene.
The gas-sensitive sensor device provided according to the present invention, wherein the thickness of the nanocrystal film material can be
0.35~15nm, preferably 2~10nm.
The gas-sensitive sensor device provided according to the present invention, wherein the size of the nanocrystal film material can be
100nm~1mm, preferably 1~100 μm, more preferably 1~10 μm.
The gas-sensitive sensor device provided according to the present invention, wherein the inductive signal hop includes multiterminal electrode knot
One of structure, interdigitated electrode structure and grid coordination electrode structure are a variety of.
In a preferred embodiment, in order to further increase the sensitivity of the gas-sensitive sensor device, the air-sensitive
Senser element can also include the discontinuous metallic particles being attached on nanocrystal film material surface.Wherein, institute
Stating metallic particles can be one of gold, silver, platinum and copper or a variety of, preferably gold.
The present invention also provides the preparation methods of above-mentioned gas-sensitive sensor device, this method comprises:
(1) chemical vapour deposition technique deposition of nano film layer material on the silicon wafer that surface has silicon dioxide film is used
Material；
(2) electron beam sensitive photoresist is coated on nanocrystal film material, then passes through electron beam lithography and oxygen etc.
Plasma etching method, cutting forms the central part to gas sensitization on nanocrystal film material；
(3) both ends of the nanocrystal film material using the method for metal evaporation after dicing prepare electrode, are received
Rice crystal chip.
In a preferred embodiment, the step (2) can also include by the cutting method formation figure
The nanocrystal film material of case.
The preparation method provided according to the present invention, it is preferable that the nanocrystal film material is graphene, the step
It (1) include: using methane and hydrogen as reaction gas, using chemical vapour deposition technique on the silicon wafer that surface has silicon dioxide film
Deposit graphene nano crystalline film material.
In a preferred embodiment, the preparation method can also include that step (4) pass through electron beam evaporation
Method deposits discontinuous metallic particles on nanocrystal chip surface.Wherein, the metallic particles can for gold, silver, platinum and
One of copper is a variety of, preferably golden.
The present invention also provides above-mentioned gas-sensitive sensor device or according to the gas-sensitive sensor device use of the method for the present invention preparation
In the application of detection gas, the gas includes one of nitrogen dioxide, nitric oxide, carbon monoxide, methane and mustard gas
Or it is a variety of.
The intercrystalline of the nanometer film material of gas-sensitive sensor device of the present invention conducts electric current by tunneling mechanism, so that this hair
Bright gas-sensitive sensor device realizes the highly sensitive sensing of gas.
Detailed description of the invention
Hereinafter, carrying out the embodiment that the present invention will be described in detail in conjunction with attached drawing, in which:
Fig. 1 a, Fig. 1 b and Fig. 1 c are the schematic diagram of gas sensor prepared by the embodiment of the present invention 1,2 and 4 respectively；
Fig. 2 is the electron micrograph of the nanocrystal film material of gas sensor made from the embodiment of the present invention 1；
Fig. 3 is the electron micrograph of the nanocrystal film material of gas sensor made from the embodiment of the present invention 2；
Fig. 4 a and Fig. 4 b are the scanning electron microscope (SEM) photographs of the chip for the surface deposition gold particle that the embodiment of the present invention 3 obtains；
Fig. 5 is the air-sensitive response curve that the embodiment of the present invention 3 measures；
Fig. 6 is the scanning electron microscope (SEM) photograph of the graphene band after cutting in the embodiment of the present invention 4；
Fig. 7 is the air-sensitive response curve that the embodiment of the present invention 4 measures.
Specific embodiment
The present invention is further described in detail With reference to embodiment, and the embodiment provided is only for explaining
The bright present invention, the range being not intended to be limiting of the invention.
Embodiment 1
(1) there is the silicon wafer (silicon dioxide layer with a thickness of 100~500nm) of thermal oxide silica membrane on surface
On, by chemical vapor deposition method, at 800~1100 DEG C, using methane and hydrogen as reaction gas, using argon gas as carrier gas,
Deposition 20 minutes prepares the graphene film with nanocrystalline structure；
(2) by the method for whirl coating, 100~800nm of spin coating is thick on the nanocrystal graphene film made from step (1)
Electron beam sensitive photoresist, by 180 DEG C toast 60 seconds removal photoresist in solvent, then pass through the side of electron-beam direct writing
Formula is cut into the region of 5 μm of 5 μ m, shape in conjunction with oxygen plasma etch method on continuous nanocrystal graphene film
At graphene island (that is, described central part to gas sensitization)；
(3) method for using metal evaporation prepares electrode (i.e. as shown in the net region Fig. 1 a): being coated with the thickness of 200nm
Photoresist (polymethyl methacrylate, PMMA), is then directed at graphene island by electron beam lithography on PMMA and prepares electricity
2~10nm transition zone is deposited by the method (Taiwan Ju Chang company PG400 model) of electron beam evaporation in the shape of pole on PMMA
Then the gold electrode of 50~100nm thickness is deposited in metal, such as chromium, titanium, nickel, germanium.Removal photoetching is dissolved by heating with 60 DEG C of acetone
Glue and extra metal are left metal electrode.With acetone and washes of absolute alcohol, residual photoresist and the metal for removing surface are broken
Bits, obtain nanocrystal graphene chip.
The schematic diagram of gas sensor made from the present embodiment is as shown in Figure 1a, and device architecture includes in gas sensitization
Center portion point 101 and inductive signal hop 102.Central part is to be perceived and be surveyed to the special gas in local environment
Amount, and other signal forms are converted into, for example resistance, capacitor etc. are exported.Inductive signal hop is to by central part
Converted special gas sensitive signal is divided to be transferred to detection device, such as detection circuit for access etc..
In an optional scheme of the present embodiment, above-mentioned inductive signal hop 102 can be respectively with it is described
Two metal electrode structures that the both ends of central part 101 are connected.
It should be understood that the number and location of center transducing part and inductive signal hop in Fig. 1 are only to illustrate
Property.According to real needs, the center transducing part and inductive signal hop of arbitrary number and position can have, connect
Mode can include but is not limited to the form that parallel connection and serial connection and parallel connection and serial connection mix.
Performance test
Chip made from the present embodiment is accessed conducting wire, as inside airtight cavity, is filled with containing a certain concentration titanium dioxide
The gas of nitrogen, carrier gas are nitrogen, and test chip responds the air-sensitive of nitrogen dioxide.As the result is shown to the Concentration Testing of nitrogen dioxide
The limit reaches 10ppm (ppm is millionth concentration equivalent).
Structural characterization
Fig. 2 shows the electron micrographs of the graphene nano crystalline film material of the gas sensor of the present embodiment.
The nanocrystal film material 200 includes: the gap 202 between nano crystal particles 201 and nano crystal particles.Wherein, above-mentioned
Gap between the size and nano crystal particles of nano crystal particles can in the preparation process of nanocrystal film material into
Row regulation.
In the present embodiment, the nanocrystal film material as division center is nano-graphene film material, nanometer
It gap between crystal grain size and nano crystal particles can be by described in chemical vapor deposition when nano-graphene film layer
Atmosphere regulates and controls with sedimentation time.
Embodiment 2
(1) there is the silicon wafer (silicon dioxide layer with a thickness of 100~500nm) of thermal oxide silica membrane on surface
On, by chemical vapor deposition method, at 800~1100 DEG C, using methane and hydrogen as reaction gas, using argon gas as carrier gas,
Deposition 20 minutes prepares the graphene film with nanocrystalline structure；
(2) by the method for whirl coating, 100~800nm of spin coating is thick on the nanocrystal graphene film made from step (1)
Electron beam sensitive photoresist, by 180 DEG C toast 60 seconds removal photoresist in solvent, then pass through the side of electron-beam direct writing
Formula is cut into the region of 5 μm of 5 μ m, shape in conjunction with oxygen plasma etch method on continuous nanocrystal graphene film
At graphene island (that is, described central part to gas sensitization), the graphene island is then cut into the band being parallel to each other,
The width of band is 1 μm, and the distance of two bands is 1 μm；
(3) method for using metal evaporation prepares electrode: coating photoresist (poly-methyl methacrylate with the thickness of 200nm
Ester, PMMA), the shape that electrode is prepared on the graphene island being made of multiple bands is then directed on PMMA by electron beam lithography
Shape is deposited 2~10nm transition metal such as chromium, titanium, nickel, germanium etc. by the method for electron beam evaporation on PMMA, is then deposited
The gold electrode of 50~100nm thickness.Removal photoresist and extra metal are dissolved by heating with 60 DEG C of acetone, is left metal electrode.
With acetone and washes of absolute alcohol, the residual photoresist and metal fragment on surface are removed, obtains nanocrystal graphene chip.
The schematic diagram of gas sensor made from the present embodiment is as shown in Figure 1 b.
Performance test
Chip made from the present embodiment is accessed conducting wire, as inside airtight cavity, is filled with containing a certain concentration titanium dioxide
The gas of nitrogen, carrier gas are nitrogen, and test chip responds the air-sensitive of nitrogen dioxide.As the result is shown to the Concentration Testing of nitrogen dioxide
The limit reaches 1ppm.
Structural characterization
Fig. 3 shows the electron micrograph of the graphene nano crystalline film material of the gas sensor of the present embodiment.
The nanocrystal film material 300 includes: the interval 302 of nanocrystal film layer band 301 and interband.Wherein, the nanometer
The width at the interval 302 of the width of crystalline film band 301 and interband can be designed and be controlled during the preparation process.
Embodiment 3
(1) there is the silicon wafer (silicon dioxide layer with a thickness of 100~500nm) of thermal oxide silica membrane on surface
On, by chemical vapor deposition method, at 800~1100 DEG C, using methane and hydrogen as reaction gas, using argon gas as carrier gas,
Deposition 20 minutes prepares the graphene film with nanocrystalline structure；
(2) by the method for whirl coating, 100~800nm of spin coating is thick on the nanocrystal graphene film made from step (1)
Electron beam sensitive photoresist, by 180 DEG C toast 60 seconds removal photoresist in solvent, then pass through the side of electron-beam direct writing
Formula is cut into the region of 5 μm of 5 μ m, shape in conjunction with oxygen plasma etch method on continuous nanocrystal graphene film
At graphene island (that is, described central part to gas sensitization), the graphene island is then cut into the band being parallel to each other,
The width of band is 1 μm, and the distance of two bands is 1 μm；
(3) method for using metal evaporation prepares electrode: coating photoresist (poly-methyl methacrylate with the thickness of 200nm
Ester, PMMA), the shape that electrode is prepared on the graphene island being made of multiple bands is then directed on PMMA by electron beam lithography
Shape is deposited 2~10nm transition metal such as chromium, titanium, nickel, germanium etc. by the method for electron beam evaporation on PMMA, is then deposited
The gold electrode of 50~100nm thickness.Removal photoresist and extra metal are dissolved by heating with 60 DEG C of acetone, is left metal electrode.
With acetone and washes of absolute alcohol, the residual photoresist and metal fragment on surface are removed, obtains nanocrystal graphene chip；
(4) it by way of electron beam evaporation (Taiwan Ju Chang company PG400 model), is deposited in chip surface discontinuous
Gold particle is deposited 100 seconds with the rate of 0.03nm/s.
Structural characterization
Fig. 4 a and Fig. 4 b are the scanning electron microscope (SEM) photographs of the chip for the surface deposition gold particle that the embodiment of the present invention 3 obtains.
Performance test
Chip made from the present embodiment is accessed conducting wire, as inside airtight cavity, is successively filled with various concentration gradient
Nitrogen dioxide is waited 300 seconds before being filled with next concentration every time, is then vacuumized 300 seconds.Content of nitrogen dioxide is respectively
20ppb, 200ppb, 400ppb and 600ppb (ppb is part per billion concentration equivalent), carrier gas is nitrogen, tests chip to two
The air-sensitive of nitrogen oxide responds.The air-sensitive response curve measured is as shown in Figure 5.From fig. 5, it can be seen that chip made from the present embodiment
Detection limit is respectively in hundred ppb magnitudes, the response sensitivity to the nitrogen dioxide of 200ppb, 400ppb and 600ppb concentration
2.3%, 3.4%, 4.5%.
Embodiment 4
(1) there is the silicon wafer (silicon dioxide layer with a thickness of 100~500nm) of thermal oxide silica membrane on surface
On, by chemical vapor deposition method, at 800~1100 DEG C, using methane and hydrogen as reaction gas, using argon gas as carrier gas,
Deposition 20 minutes prepares the graphene film with nanocrystalline structure；
(2) by the method for whirl coating, 100~800nm of spin coating is thick on the nanocrystal graphene film made from step (1)
Electron beam sensitive photoresist, by 180 DEG C toast 60 seconds removal photoresist in solvent, then pass through the side of electron-beam direct writing
Formula is cut into the region of 5 μm of 5 μ m, shape in conjunction with oxygen plasma etch method on continuous nanocrystal graphene film
At graphene island (that is, described central part to gas sensitization), the graphene island is then cut into the band being parallel to each other,
The width of band is 50nm, and the distance of two bands is 50nm；
(3) method for using metal evaporation prepares electrode: coating photoresist (poly-methyl methacrylate with the thickness of 200nm
Ester, PMMA), graphene band is then directed on PMMA by electron beam lithography and prepares interdigital shape electrode, interdigital electrode
Length be enough to cover graphene band, the width of interdigital electrode is 200nm.It is steamed on PMMA by the method for electron beam evaporation
2~10nm transition metal such as chromium, titanium, nickel, germanium etc. is plated, the gold electrode of 50~100nm thickness is then deposited.Acetone with 60 DEG C adds
Heat of solution removes photoresist and extra metal, is left metal electrode.With acetone and washes of absolute alcohol, the remnants on surface are removed
Photoresist and metal fragment obtain nanocrystal graphene interdigital electrode chip.
The schematic diagram of gas sensor made from the present embodiment is as illustrated in figure 1 c.
Structural characterization
The scanning electron microscope (SEM) photograph of graphene band in the present embodiment after step (2) cutting is as shown in Figure 6.
Performance test
Chip made from the present embodiment is accessed conducting wire, as inside airtight cavity, is successively filled with various concentration gradient
Nitrogen dioxide is waited 300 seconds before being filled with next concentration every time, is then vacuumized 300 seconds.Content of nitrogen dioxide is respectively
40ppt, 400ppt and 4ppb (wherein ppt is part per trillion concentration equivalent), carrier gas is nitrogen, tests chip to nitrogen dioxide
Air-sensitive response.The air-sensitive response curve measured is as shown in Figure 7.From figure 7 it can be seen that the present embodiment chip is to nitrogen dioxide
The Concentration Testing limit reaches the magnitude of tens ppt, and the detection sensitivity to 40ppt, 400ppt and 4000ppt concentration is respectively
1.3%, 2.5%, 3.3%.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (11)
1. a kind of gas-sensitive sensor device, the gas-sensitive sensor device includes central part and the inductive signal transmission to gas sensitization
Part, wherein the central part includes the nanocrystal film material of graphene, stannic disulfide or molybdenum disulfide.
2. gas-sensitive sensor device according to claim 1, wherein the nanocrystal film material is graphene.
3. gas-sensitive sensor device according to claim 1 or 2, wherein the nanocrystal film material is patterned
Nanocrystal film material.
4. gas-sensitive sensor device according to any one of claim 1 to 3, wherein the nanocrystal film material
With a thickness of 0.35-15nm, preferably 2~10nm.
5. gas-sensitive sensor device according to any one of claim 1 to 4, wherein inductive signal transport part subpackage
Include one of multiterminal electrode structure, interdigitated electrode structure and grid coordination electrode structure or a variety of.
6. gas-sensitive sensor device according to any one of claim 1 to 5, wherein the gas-sensitive sensor device further includes
The discontinuous metallic particles being attached on nanocrystal film material surface, it is preferable that the metallic particles be gold,
One of silver, platinum, palladium and copper are a variety of, more preferably golden.
7. the preparation method of gas-sensitive sensor device described in any one of claims 1 to 6, the preparation method include:
(1) chemical vapour deposition technique deposition of nano film material on the silicon wafer that surface has silicon dioxide film is used；
(2) electron beam sensitive photoresist is coated on nanocrystal film material, then passes through electron beam lithography and oxygen plasma
Body lithographic method, cutting forms the central part to gas sensitization on nanocrystal film material；
(3) both ends of the nanocrystal film material using the method for metal evaporation after dicing prepare electrode, obtain nanocrystalline
Body chip.
8. preparation method according to claim 7, wherein the step (2) further include by cutting formed it is patterned
Nanocrystal film material.
9. preparation method according to claim 7, wherein the nanocrystal film material is graphene, the step
It (1) include: using methane and hydrogen as reaction gas, using chemical vapour deposition technique on the silicon wafer that surface has silicon dioxide film
Deposit graphene nano crystalline film material.
10. preparation method according to claim 7, wherein the preparation method further includes that step (4) is steamed by electron beam
The method of hair deposits discontinuous noble metal granule on nanocrystal chip surface, it is preferable that the metallic particles be gold, silver,
One of platinum, palladium and copper are a variety of, more preferably golden.
11. gas-sensitive sensor device described in any one of claims 1 to 6 or according to described in any one of claims 1 to 6
The gas-sensitive sensor device of method preparation is used for the application of detection gas, and the gas includes nitrogen dioxide, nitric oxide, an oxidation
One of carbon, methane and mustard gas are a variety of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711401255.9A CN109959681A (en) | 2017-12-22 | 2017-12-22 | A kind of gas-sensitive sensor device and its preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711401255.9A CN109959681A (en) | 2017-12-22 | 2017-12-22 | A kind of gas-sensitive sensor device and its preparation method and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109959681A true CN109959681A (en) | 2019-07-02 |
Family
ID=67018942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711401255.9A Pending CN109959681A (en) | 2017-12-22 | 2017-12-22 | A kind of gas-sensitive sensor device and its preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109959681A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110514698A (en) * | 2019-09-27 | 2019-11-29 | 福州京东方光电科技有限公司 | A kind of gas measuring device and gas detection equipment |
| CN110530935A (en) * | 2019-08-31 | 2019-12-03 | 中国石油大学(华东) | The construction method of molybdenum-disulfide radical gas sensing array and its in SF6Application in the detection of gas decomposition components |
| CN111398368A (en) * | 2020-04-30 | 2020-07-10 | 中国人民解放军陆军防化学院 | Nitrogen dioxide gas sensor based on molybdenum disulfide and preparation method |
| CN112126236A (en) * | 2020-10-13 | 2020-12-25 | 济南大学 | Porphyrin covalent organic framework/graphene aerogel composite material and electrochemical sensor and application thereof |
| CN112198196A (en) * | 2020-10-09 | 2021-01-08 | 中国人民解放军陆军防化学院 | Disinfection effect evaluation system |
| CN112505098A (en) * | 2020-10-29 | 2021-03-16 | 北京机械设备研究所 | MEMS gas sensitive structure and preparation process method thereof |
| CN113979477A (en) * | 2021-09-27 | 2022-01-28 | 西北工业大学 | Molybdenum disulfide film, preparation method, application and flexible health sensor |
| CN115558897A (en) * | 2022-09-13 | 2023-01-03 | 华中科技大学 | Gas sensor and preparation method and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103602964A (en) * | 2013-10-17 | 2014-02-26 | 常州二维碳素科技有限公司 | Method for preparing metal electrode on grapheme conductive film |
| CN104049002A (en) * | 2013-03-15 | 2014-09-17 | 英飞凌科技股份有限公司 | Sensor and sensing method |
| CN104701146A (en) * | 2014-12-31 | 2015-06-10 | 中国科学院物理研究所 | Graphene nano-electronical appliance and preparation method thereof |
| CN105651814A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nanometer tin-sulfide-based gas sensor and preparation method thereof |
| CN105668546A (en) * | 2016-01-29 | 2016-06-15 | 中国科学院物理研究所 | Method for preparing nano-scale graphene structure |
| JP2016151558A (en) * | 2015-02-19 | 2016-08-22 | 富士通株式会社 | Gas sensor |
-
2017
- 2017-12-22 CN CN201711401255.9A patent/CN109959681A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049002A (en) * | 2013-03-15 | 2014-09-17 | 英飞凌科技股份有限公司 | Sensor and sensing method |
| CN103602964A (en) * | 2013-10-17 | 2014-02-26 | 常州二维碳素科技有限公司 | Method for preparing metal electrode on grapheme conductive film |
| CN105651814A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nanometer tin-sulfide-based gas sensor and preparation method thereof |
| CN104701146A (en) * | 2014-12-31 | 2015-06-10 | 中国科学院物理研究所 | Graphene nano-electronical appliance and preparation method thereof |
| JP2016151558A (en) * | 2015-02-19 | 2016-08-22 | 富士通株式会社 | Gas sensor |
| CN105668546A (en) * | 2016-01-29 | 2016-06-15 | 中国科学院物理研究所 | Method for preparing nano-scale graphene structure |
Non-Patent Citations (3)
| Title |
|---|
| DONGHUA LIU 等: "Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates", 《CARBON》 * |
| JING ZHAO 等: "Ultra-sensitive strain sensors based on piezoresistive nanographene films", 《APPLIED PHYSICS LETTERS》 * |
| 徐世聪: "绝缘衬底上石墨烯的制备及其电学性质研究", 《中国优秀硕士学位论文全文数据库工程科技I辑》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110530935A (en) * | 2019-08-31 | 2019-12-03 | 中国石油大学(华东) | The construction method of molybdenum-disulfide radical gas sensing array and its in SF6Application in the detection of gas decomposition components |
| CN110514698A (en) * | 2019-09-27 | 2019-11-29 | 福州京东方光电科技有限公司 | A kind of gas measuring device and gas detection equipment |
| CN110514698B (en) * | 2019-09-27 | 2022-09-30 | 福州京东方光电科技有限公司 | Gas sensing device and gas detection equipment |
| CN111398368A (en) * | 2020-04-30 | 2020-07-10 | 中国人民解放军陆军防化学院 | Nitrogen dioxide gas sensor based on molybdenum disulfide and preparation method |
| CN111398368B (en) * | 2020-04-30 | 2023-11-07 | 中国人民解放军陆军防化学院 | Molybdenum disulfide-based nitrogen dioxide gas sensor and preparation method thereof |
| CN112198196A (en) * | 2020-10-09 | 2021-01-08 | 中国人民解放军陆军防化学院 | Disinfection effect evaluation system |
| CN112126236A (en) * | 2020-10-13 | 2020-12-25 | 济南大学 | Porphyrin covalent organic framework/graphene aerogel composite material and electrochemical sensor and application thereof |
| CN112505098A (en) * | 2020-10-29 | 2021-03-16 | 北京机械设备研究所 | MEMS gas sensitive structure and preparation process method thereof |
| CN113979477A (en) * | 2021-09-27 | 2022-01-28 | 西北工业大学 | Molybdenum disulfide film, preparation method, application and flexible health sensor |
| CN113979477B (en) * | 2021-09-27 | 2024-01-16 | 西北工业大学 | Molybdenum disulfide film, preparation method, application and flexible health sensor |
| CN115558897A (en) * | 2022-09-13 | 2023-01-03 | 华中科技大学 | Gas sensor and preparation method and application thereof |
| CN115558897B (en) * | 2022-09-13 | 2024-06-04 | 华中科技大学 | Gas sensor and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109959681A (en) | A kind of gas-sensitive sensor device and its preparation method and application | |
| Zeng et al. | Networks of ultrasmall Pd/Cr nanowires as high performance hydrogen sensors | |
| Zeng et al. | Hydrogen gas sensing with networks of ultrasmall palladium nanowires formed on filtration membranes | |
| Yang et al. | Smaller is faster and more sensitive: the effect of wire size on the detection of hydrogen by single palladium nanowires | |
| Saruhan et al. | Influences of semiconductor metal oxide properties on gas sensing characteristics | |
| Wu et al. | Quantitative principles for precise engineering of sensitivity in graphene electrochemical sensors | |
| Siebert et al. | Facile fabrication of semiconducting oxide nanostructures by direct ink writing of readily available metal microparticles and their application as low power acetone gas sensors | |
| Horprathum et al. | Ultrasensitive hydrogen sensor based on Pt-decorated WO3 nanorods prepared by glancing-angle dc magnetron sputtering | |
| Walter et al. | Palladium mesowire arrays for fast hydrogen sensors and hydrogen-actuated switches | |
| Jung et al. | Fast-response room temperature hydrogen gas sensors using platinum-coated spin-capable carbon nanotubes | |
| Park et al. | Enhanced H2S gas sensing performance of networked CuO-ZnO composite nanoparticle sensor | |
| Liu et al. | Sensitive room temperature photoluminescence-based sensing of H2S with novel CuO–ZnO nanorods | |
| Hwang et al. | Facile control of C2H5OH sensing characteristics by decorating discrete Ag nanoclusters on SnO2 nanowire networks | |
| Vander Wal et al. | Metal-oxide nanostructure and gas-sensing performance | |
| Luyo et al. | Gas sensing response of NiO nanoparticle films made by reactive gas deposition | |
| Di Francia et al. | Conductometric gas nanosensors | |
| Cho et al. | Half-pipe palladium nanotube-based hydrogen sensor using a suspended nanofiber scaffold | |
| Kim et al. | Microwave assisted hydrothermal synthesis of Au@ TiO2 core–shell nanoparticles for high temperature CO sensing applications | |
| Ahsan et al. | Low temperature response of nanostructured tungsten oxide thin films toward hydrogen and ethanol | |
| Zoval et al. | Implementation of electrochemically synthesized silver nanocrystallites for the preferential SERS enhancement of defect modes on thermally etched graphite surfaces | |
| Wang et al. | Pd/Ni nanowire film coated SAW hydrogen sensor with fast response | |
| Zhou et al. | Enhanced NO2 sensitivity of SnO2 SAW gas sensors by facet engineering | |
| Munz et al. | Facile synthesis of titania nanowires via a hot filament method and conductometric measurement of their response to hydrogen sulfide gas | |
| Song et al. | Porous Cr2O3 architecture assembled by nano-sized cylinders/ellipsoids for enhanced sensing to trace H2S gas | |
| Mistewicz et al. | Ultrasonic processing of SbSI nanowires for their application to gas sensors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190702 |
|
| RJ01 | Rejection of invention patent application after publication |