CN109950356B - Photoelectric detector based on cesium, lead and iodine and preparation method - Google Patents
Photoelectric detector based on cesium, lead and iodine and preparation method Download PDFInfo
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- CN109950356B CN109950356B CN201910151450.3A CN201910151450A CN109950356B CN 109950356 B CN109950356 B CN 109950356B CN 201910151450 A CN201910151450 A CN 201910151450A CN 109950356 B CN109950356 B CN 109950356B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052792 caesium Inorganic materials 0.000 title claims description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 title claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 title description 2
- 229910052740 iodine Inorganic materials 0.000 title description 2
- 239000011630 iodine Substances 0.000 title description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 38
- VPTDFJOOPWOZRN-UHFFFAOYSA-N [I].[Pb].[Cs] Chemical compound [I].[Pb].[Cs] VPTDFJOOPWOZRN-UHFFFAOYSA-N 0.000 claims abstract description 33
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims abstract description 22
- LNDFVHXALNWEMX-UHFFFAOYSA-L [Pb](I)I.[Cs] Chemical compound [Pb](I)I.[Cs] LNDFVHXALNWEMX-UHFFFAOYSA-L 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 114
- 239000011241 protective layer Substances 0.000 claims description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- DXZHSXGZOSIEBM-UHFFFAOYSA-M iodolead Chemical compound [Pb]I DXZHSXGZOSIEBM-UHFFFAOYSA-M 0.000 claims 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了一种基于铯铅碘光电探测器及制备方法，从下到上依次为衬底层、第一电极层、钙钛矿铯铅碘光敏层、第二电极层、器件保护层；所述的钙钛矿铯铅碘光敏层厚度10‑22纳米；所述的钙钛矿铯铅碘光敏层从下到上依次为第一碘化铅层、第一钙钛矿铯铅碘CsPbI3光敏层、碘化铯、第二钙钛矿铯铅碘CsPbI3光敏层、第二碘化铅层；所述的钙钛矿铯铅碘光敏层采用化学气相沉积法制备。本发明中采用化学气相沉积法交替沉积碘化铯和碘化铅，碘化铯和碘化铅从界面处发生化学反应生成钙钛矿铯铅碘薄膜层，形成三明治结构，这种结构有利于提高钙钛矿铯铅碘薄膜的稳定性。
The invention discloses a cesium-lead-iodine-based photodetector and a preparation method, which are, from bottom to top, a substrate layer, a first electrode layer, a perovskite cesium-lead-iodine photosensitive layer, a second electrode layer, and a device protection layer; The thickness of the perovskite cesium lead iodine photosensitive layer is 10-22 nanometers; the perovskite cesium lead iodine photosensitive layer is the first lead iodide layer and the first perovskite cesium lead iodine CsPbI from bottom to top. The photosensitive layer, the cesium iodide, the second perovskite cesium lead iodine CsPbI 3 photosensitive layer, and the second lead iodide layer; the perovskite cesium lead iodine photosensitive layer is prepared by chemical vapor deposition. In the present invention, chemical vapor deposition method is used to deposit cesium iodide and lead iodide alternately, and the cesium iodide and lead iodide undergo chemical reaction from the interface to form a perovskite cesium lead iodide thin film layer to form a sandwich structure, which is beneficial to Improving the stability of perovskite cesium lead iodine thin films.
Description
Technical Field
The invention belongs to the field of device preparation. In particular to a photoelectric detector taking a perovskite structure cesium lead iodine film as a photosensitive layer.
Background
Cesium lead iodide (CsPbI) with perovskite structure3) The quantum dot has high photoelectric conversion efficiency and is used for preparing a photoelectric detector. The cesium-lead-iodine quantum dots synthesized by the liquid phase method are easily decomposed and phase-changed in the process of preparing a device, so that the performance of the device is failed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of a prototype device of a cesium-lead-iodine-based photodetector.
The perovskite cesium lead iodine photoelectric detector prepared by the method is simple in preparation process, good in device performance and high in stability.
A cesium-lead-iodine-based photoelectric detector sequentially comprises a substrate layer, a first electrode layer, a perovskite cesium-lead-iodine photosensitive layer, a second electrode layer and a device protection layer from bottom to top; the thickness of the perovskite cesium lead iodine photosensitive layer is 10-22 nanometers;
the perovskite cesium lead iodide photosensitive layer sequentially comprises a first lead iodide layer and a first perovskite cesium lead iodide CsPbI from bottom to top3Photosensitive layer, cesium iodide, second perovskite cesium lead iodide CsPbI3Photosensitive layer, second lead iodide layer；
The perovskite cesium lead iodine photosensitive layer is prepared by a chemical vapor deposition method;
preferably, the thickness of the first lead iodide layer is 2-5 nanometers, and the first perovskite cesium lead iodide CsPbI3The thickness of the photosensitive layer is 2-8 nm, the thickness of cesium iodide is 2-5 nm, and the second perovskite cesium lead iodide CsPbI3The thickness of the photosensitive layer is 2-8 nanometers, and the thickness of the second lead iodide layer is 2-5 nanometers.
Preferably, the thickness of the second electrode layer is 20-50 nm.
Preferably, the device protective layer is polymethyl methacrylate and the thickness is 20-50 nanometers.
Preferably, the substrate layer is a silicon or glass plate on the surface of which an oxide layer is grown.
A preparation method of a cesium-lead-iodine-based photoelectric detector specifically comprises the following steps:
sequentially depositing lead iodide PbI with the thickness of 2-5 nanometers on the surface of the electrode layer on the substrate layer with the electrode layer on the surface by adopting a chemical vapor deposition method2A layer, a cesium iodide CsI layer with the thickness of 2-5 nanometers and a lead iodide layer with the thickness of 2-5 nanometers; further heat-treating the three-layer film at the temperature of 250-300 ℃ to respectively obtain two layers of perovskite cesium lead iodide CsPbI with the thickness of 2-8 nanometers at two interface layers of cesium iodide and lead iodide3A photosensitive layer; then evaporating an electrode with the thickness of 20-50 nanometers on the surface of the lead iodide; and finally, spin-coating a polymethyl methacrylate PMMA device protective layer on the surface of the electrode layer, wherein the thickness of the protective layer is 20-50 nanometers.
According to the invention, cesium iodide and lead iodide are alternately deposited by adopting a chemical vapor deposition method, and the cesium iodide and the lead iodide are subjected to chemical reaction from an interface to generate the perovskite cesium lead iodine thin film layer so as to form a sandwich structure, so that the structure is beneficial to improving the stability of the perovskite cesium lead iodine thin film.
Drawings
Fig. 1 is a schematic structural diagram of a cesium-lead-iodine-based photodetector according to the present invention.
Detailed Description
As shown in FIG. 1, a cesium-lead-iodine-based photodetector comprises, from bottom to top, a protective layer 9, a second electrode layer 8, and a second lead iodide layer PbI 27. Cesium lead iodide CsPbI of the second perovskite3A photosensitive layer 6, a cesium iodide layer CsI5, a first perovskite cesium lead iodide CsPbI3Photosensitive layer 4, first lead iodide layer PbI23. A conductive layer ITO electrode 2 and a substrate layer glass 1.
The first embodiment is as follows: sequentially depositing lead iodide PbI with the thickness of 2 nanometers on the surface of the electrode layer by adopting a chemical vapor deposition method on a silicon substrate layer with an oxide layer grown on the surface2A layer, on which a cesium iodide CsI layer with a thickness of 2 nm is further deposited, and then a lead iodide layer with a thickness of 2 nm is deposited; further carrying out heat treatment on the three layers of films at 250 ℃, and respectively obtaining two layers of perovskite cesium lead iodide CsPbI with the thickness of 2 nanometers at two interface layers of cesium iodide and lead iodide3A photosensitive layer; then evaporating an electrode with the thickness of 20 nanometers on the surface of the lead iodide; and finally, spin-coating a polymethyl methacrylate (PMMA) device protective layer on the surface of the electrode layer, wherein the thickness of the protective layer is 20 nanometers.
Example two: sequentially depositing lead iodide PbI with the thickness of 2 nanometers on the surface of the electrode layer on the substrate layer of the glass sheet by adopting a chemical vapor deposition method2A layer, on which a cesium iodide CsI layer with a thickness of 2 nm is further deposited, and then a lead iodide layer with a thickness of 2 nm is deposited; further heat-treating the three-layer film at 300 ℃ to respectively obtain two layers of perovskite cesium lead iodide CsPbI with the thickness of 8 nanometers at two interface layers of cesium iodide and lead iodide3A photosensitive layer; then evaporating an electrode with the thickness of 50 nanometers on the surface of the lead iodide; and finally, spin-coating a polymethyl methacrylate (PMMA) device protective layer on the surface of the electrode layer, wherein the thickness of the protective layer is 50 nanometers.
Example three: sequentially depositing lead iodide PbI with the thickness of 5 nanometers on the surface of the electrode layer by adopting a chemical vapor deposition method on a silicon substrate layer with an oxide layer grown on the surface2A layer, on which a cesium iodide CsI layer with a thickness of 2 nm is further deposited, and then a lead iodide layer with a thickness of 2 nm is deposited; further heat-treating the three layers of films at 280 deg.CTwo interface layers of cesium iodide and lead iodide are respectively used for obtaining two layers of perovskite cesium lead iodide CsPbI with the thickness of 3 nanometers3A photosensitive layer; then evaporating an electrode with the thickness of 40 nanometers on the surface of the lead iodide; and finally, spin-coating a polymethyl methacrylate (PMMA) device protective layer on the surface of the electrode layer, wherein the thickness of the protective layer is 40 nanometers.
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| CN115347081A (en) * | 2022-09-01 | 2022-11-15 | 郑州大学 | A kind of preparation method of all-inorganic perovskite solar cell |
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| CN107316943B (en) * | 2017-07-14 | 2019-06-18 | 合肥工业大学 | Broadband photodetector based on lead iodine cesium formamidine thin film and preparation method thereof |
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