CN109950264A - Back side illumination image sensor and its manufacturing method - Google Patents
Back side illumination image sensor and its manufacturing method Download PDFInfo
- Publication number
- CN109950264A CN109950264A CN201910226207.3A CN201910226207A CN109950264A CN 109950264 A CN109950264 A CN 109950264A CN 201910226207 A CN201910226207 A CN 201910226207A CN 109950264 A CN109950264 A CN 109950264A
- Authority
- CN
- China
- Prior art keywords
- sensor devices
- white
- back side
- illumination image
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of back side illumination image sensor and its manufacturing methods.The back side illumination image sensor, including substrate and positioned at the white pixel unit of the substrate surface；The white pixel unit includes: white filter；First sensor devices, for receiving the optical signal filtered through the white filter and being converted into electric signal；Matt film, positioned at the incident side of first sensor devices, for reducing the light into first sensor devices.The brightness of imaging picture can be improved in one aspect of the present invention；On the other hand it avoids highly sensitive white pixel to be saturated too early, improves image quality.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of back side illumination image sensor and its manufacturers
Method.
Background technique
So-called imaging sensor refers to the device for converting optical signals to electric signal.It is different according to the principle of its foundation, it can
To divide into CCD (Charge Coupled Device, charge coupled cell) imaging sensor and CMOS
(Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device) imaging sensor.Due to
Cmos image sensor is made of traditional cmos circuit technique, therefore can will be outer required for imaging sensor and its
It encloses circuit to be integrated, so that cmos image sensor has wider array of application prospect.
According to the difference for the position for receiving light, cmos image sensor can be divided into imaging sensor front-illuminated and back-illuminated
Formula (Back Side Illumination, BSI) imaging sensor.Wherein, compared with imaging sensor front-illuminated, back-illuminated type figure
As being exactly to change the structure inside element in place of the maximum optimization of sensor, i.e., the element input path of photosensitive layer is turned
Light can be entered from back side direct projection, avoids in imaging sensor front-illuminated, light will receive lenticule and photoelectricity for direction
The influence of structure and thickness between diode, improves the efficiency of light receiver.CMOS back side illumination image sensor has work
Skill is simple, be easy to integrated other devices, small in size, light-weight, small power consumption and it is at low cost the advantages that.Therefore, with image sensing
The development of technology, CMOS back side illumination image sensor replace CCD back side illumination image sensor to be applied to all kinds of electricity more and more
In sub- product.Currently, CMOS back side illumination image sensor has been widely used for static digital camera, DV, medical treatment
With photographic device and automobile-used photographic device etc..
In existing back side illumination image sensor, in order to obtain brighter shooting image in dark place, in addition to
It is provided with outside red pixel, green pixel and blue pixel, is also additionally arranged white pixel.But since white pixel is than other
Pixel is saturated earlier, to easily eventually lead to the fuzzy of image to other effect pixels of surrounding.
Therefore, the image quality for how improving the imaging sensor with white pixel avoids that image blur phenomena occurs,
It is a technical problem to be solved urgently.
Summary of the invention
The present invention provides a kind of back side illumination image sensor and its manufacturing method, passes for solving existing back side illumination image
Blurred image problem has occurred for sensor, to improve image quality.
To solve the above-mentioned problems, the present invention provides a kind of back side illumination image sensor, including substrate and it is located at institute
State the white pixel unit of substrate surface；The white pixel unit includes:
White filter；
First sensor devices, for receiving the optical signal filtered through the white filter and being converted into electric signal；
Matt film, positioned at the incident side of first sensor devices, for reducing the light into first sensor devices
Line.
Preferably, the white pixel unit further includes the first lenticule；First lenticule is located at the white filter
The incident side of mating plate, for converging the light into the white filter；
The matt film is covered in the incidence surface of first lenticule.
Preferably, the white pixel unit further includes insulating layer；The insulating layer is located at the white filter and institute
It states between the first sensor devices；
The matt film is located at the surface that the insulating layer deviates from first sensor devices, and the white filter is located at
The delustring film surface.
Preferably, the material of the matt film is one of amorphous carbon, graphene, silica or a variety of combinations.
It preferably, further include the red pixel cell for being located at the substrate surface；The red pixel cell includes:
Red lightscreening plate is arranged and mutually isolated with the white filter same layer；
Second sensor devices, positioned at the light emission side of the Red lightscreening plate, with the first sensor devices same layer setting and
It is mutually isolated.
To solve the above-mentioned problems, the present invention also provides a kind of manufacturing methods of back side illumination image sensor, including such as
Lower step:
One substrate is provided；
White pixel unit is formed in the substrate surface, the white pixel unit includes white filter, the first sense
Optical device and matt film；First sensor devices are for receiving the optical signal filtered through the white filter and being converted
For electric signal；The matt film is located at the incident side of first sensor devices, enters first sensor devices for reducing
Light.
Preferably, forming white pixel unit in the specific steps of the substrate surface includes:
The first sensor devices are formed in the substrate surface；
White filter is formed in the incident side of first sensor devices；
The first lenticule is formed in the incident side of the white filter；
Matt film is formed in the incidence surface of first lenticule.
Preferably, forming white pixel unit in the specific steps of the substrate surface includes:
The first sensor devices are formed in the substrate surface；
Form the surface that insulating layer deviates from the substrate in first sensor devices；
Form the surface that matt film deviates from first sensor devices in the insulating layer；
Form the surface that white filter deviates from the insulating layer in the matt film.
Preferably, the material of the matt film is one of amorphous carbon, graphene, silica or a variety of combinations.
Preferably, further include following steps:
Red pixel cell is formed in the substrate surface, the red pixel cell includes Red lightscreening plate and the second sense
Optical device；The Red lightscreening plate is arranged and mutually isolated with the white filter same layer；Second sensor devices are located at
The light emission side of the Red lightscreening plate is arranged and mutually isolated with the first sensor devices same layer.
Back side illumination image sensor provided by the invention and its manufacturing method include white filter, first by setting
On the one hand the brightness of imaging picture can be improved, so that back side illumination image sensor in the white pixel of sensor devices and matt film
It can be applied to the application field that back side illumination image sensor is expanded in a variety of environment；On the other hand, the setting energy of matt film
It is enough to reduce the light for entering first sensor devices, it avoids highly sensitive white pixel and is saturated too early, it is therefore prevented that image
It obscures, improves image quality, improve the performance of back side illumination image sensor.
Detailed description of the invention
Attached drawing 1 is the structural schematic diagram of back side illumination image sensor in the first specific embodiment of the invention；
Attached drawing 2 is the manufacturing method flow chart of back side illumination image sensor in the first specific embodiment of the invention；
Fig. 3 A-3E is the first specific embodiment main work during manufacturing back side illumination image sensor of the invention
Skill schematic cross-section；
Attached drawing 4 is the structural schematic diagram of back side illumination image sensor in the second specific embodiment of the invention.
Specific embodiment
With reference to the accompanying drawing to the specific embodiment of back side illumination image sensor provided by the invention and its manufacturing method
It elaborates.
First specific embodiment
Present embodiment provides a kind of back side illumination image sensor, and attached drawing 1 is the first specific embodiment party of the invention
The structural schematic diagram of back side illumination image sensor in formula.As shown in Figure 1, the back side illumination image sensing that present embodiment provides
Device includes substrate 10 and the white pixel unit I positioned at 10 surface of substrate；The white pixel unit I includes:
White filter 111；
First sensor devices 121, for receiving the optical signal through the white filter 111 filtering and being converted into electricity
Signal；
Matt film 14 enters first sensor devices for reducing positioned at the incident side of first sensor devices 121
121 light.
Specifically, 10 surface of substrate has the multiple pixel regions being arranged in array, and illustrates only a picture in Fig. 1
The structure in plain region.In addition to that can also have red pixel cell II, indigo plant with white pixel unit I in the pixel region
The combination of one or more of color pixel unit III, green pixel cell IV.Present embodiment is with the pixel unit
Including being illustrated for white pixel unit I, red pixel cell II, blue pixel cells III and green pixel cell IV.
As shown in Figure 1, the red pixel cell II includes Red lightscreening plate 112 and the second sensor devices 122, wherein
The Red lightscreening plate 112 is arranged and mutually isolated with 111 same layer of white filter；The blue pixel cells III include
Blue color filter 113 and third sensor devices 123, wherein the blue color filter 113 and 111 same layer of white filter
It is arranged and mutually isolated；The green pixel cell IV includes green color filter 114 and the 4th sensor devices 124, wherein described
Green color filter 114 is arranged and mutually isolated with 111 same layer of white filter.I.e. by first sensor devices 121, institute
It states the second sensor devices 122, the third sensor devices 123 and the 4th sensor devices 124 and forms the pixel region
Photosensitive layer, the white filter 111, the Red lightscreening plate 112, the blue color filter 113 and the green color filter
114 form the filter layer for being stacked and placed on the photosensitive layer surface.It is first sensor devices 121, described in present embodiment
Second sensor devices 122, the third sensor devices 123 and the 4th sensor devices 124 can be photodiode.Institute
It states white filter 111, the Red lightscreening plate 112, the blue color filter 113 and the green color filter 114 and passes through gold
It is mutually isolated to belong to isolated gate 16；First sensor devices 121, second sensor devices 122, the third sensor devices
123 and the 4th sensor devices 124 by deep trench isolation structure (Deep Trench Isolation, DTI) 17 and
18 phases of fleet plough groove isolation structure (Shallow Trench Isolation, STI) corresponding with the deep trench isolation structure 17
Mutually isolation.
The white pixel unit I is set in pixel region in present embodiment, imaging picture can be improved
Brightness extends back-illuminated type figure so that back side illumination image sensor can also obtain more bright image in darker environment
As the application field of sensor.Meanwhile the matt film 14 is arranged by the incident side in first sensor devices 121, subtract
The amount into the light of first sensor devices 121 is lacked, it is too early to avoid the white pixel unit I under the identical time for exposure
Saturation, it is therefore prevented that image obscures, and improves image quality, improves the performance of back side illumination image sensor.
The Red lightscreening plate 112, the blue color filter 113 and the green color filter in present embodiment
114 be to disperse red pigment, blue pigment and viridine green in transparent photoresist to be formed respectively, the white filter
Mating plate 111 is formed by the transparent photoresist undoped with pigment.
In present embodiment, the white pixel unit I further includes the first lenticule 131；First lenticule
131 are located at the incident side of the white filter 111, for converging the light into the white filter 111；
The matt film 14 is covered in the incidence surface of first lenticule 131.
Specifically, ambient is successively through the matt film 14, first lenticule 131, the white filter
After 111, received by first sensor devices 121.Present embodiment passes through the surface shape in first lenticule 131
At the matt film 14, without to the white filter 111, first sensor devices 121 and first lenticule 131
Formation process improve, simplify the manufacturing process of back side illumination image sensor, reduce manufacturing cost.
Back side illumination image sensor described in present embodiment, further includes: positioned at entering for the Red lightscreening plate 112
Second lenticule 132 of light side, for converging the light into the Red lightscreening plate 112；Positioned at the blue color filter 113
Incident side third lenticule 133, for converging the light into the blue color filter 113；Positioned at the green filter
4th lenticule 134 of the incident side of piece 114, for converging the light into the green color filter 114.
Preferably, the material of the matt film 14 is one of amorphous carbon, graphene, silica or a variety of groups
It closes.Those skilled in the art can adjust the thickness of the matt film 14 according to actual needs, present embodiment to this not
It limits.Described in present embodiment it is a variety of refer to it is two or more.
Moreover, present embodiment additionally provides a kind of manufacturing method of back side illumination image sensor, and attached drawing 2 is
The manufacturing method flow chart of back side illumination image sensor in first specific embodiment of the invention, Fig. 3 A-3E are the present invention first
Specific embodiment main technique schematic cross-section, present embodiment during manufacturing back side illumination image sensor
The structure of the back side illumination image sensor of manufacture may refer to Fig. 1.As shown in Figure 1, Figure 2 and shown in Fig. 3 A- Fig. 3 E, this specific embodiment party
The manufacturing method for the back side illumination image sensor that formula provides includes the following steps:
Step S21 provides a substrate 10；
Step S22 forms white pixel unit I in 10 surface of substrate, and the white pixel unit I includes white filter
Mating plate 111, the first sensor devices 121 and matt film 14；First sensor devices 121 are for receiving through the white filter
The optical signal of 111 filterings is simultaneously converted into electric signal；；What the matt film 14 was located at first sensor devices 121 enters light
Side, for reducing the light into first sensor devices 121.
Preferably, forming specific steps of the white pixel unit I in 10 surface of substrate includes:
The first sensor devices 121 are formed in 10 surface of substrate；
White filter 111 is formed in the incident side of first sensor devices 121；
The first lenticule 131 is formed in the incident side of the white filter 111；
Matt film 14 is formed in the incidence surface of first lenticule 131.
Preferably, the material of the matt film 14 is one of amorphous carbon, graphene, silica or a variety of groups
It closes.It include below the first sub- matt film 32 being made of silica and second be made of amorphous carbon with the matt film 14
It is illustrated for matt film 33.
10 surface of substrate has the multiple pixel regions being arranged in array, and only shows in Fig. 1, Fig. 2, Fig. 3 A- Fig. 3 E
The structure of one pixel region.In addition to that can also have red pixel list with white pixel unit I in the pixel region
The combination of one or more of member II, blue pixel cells III, green pixel cell IV.Present embodiment is with the picture
Plain unit includes carrying out for white pixel unit I, red pixel cell II, blue pixel cells III and green pixel cell IV
Explanation.
Specifically, firstly, being formed includes first sensor devices 121, the second sensor devices 122, third photoreceptor
The photosensitive layer of part 123 and the 4th sensor devices 124；Secondly, being formed includes white filter 111, Red lightscreening plate 112, blue
The filter layer of optical filter 113 and green color filter 114；Then, formed includes the first lenticule 131, the second lenticule 132, the
The lens jacket of three lenticules 133 and the 4th lenticule 134, has obtained structure as shown in Figure 3A.The white filter 111,
The Red lightscreening plate 112, the blue color filter 113 and the green color filter 114 by metal isolated gate 14 mutually every
From；First sensor devices 121, second sensor devices 122, third sensor devices 123 and described 4th photosensitive
Device 124 passes through deep trench isolation structure 17 and fleet plough groove isolation structure 18 corresponding with the deep trench isolation structure 17
It is mutually isolated.
Then, using atom layer deposition process depositing amorphous carbon film (Amorphous Carbon Film, APF) 30 in
The lens layer surface, obtains structure as shown in Figure 3B.And then, using atom layer deposition process deposited silicon dioxide layer 31
In 30 surface of amorphous carbon film, as shown in Figure 3 C.Later, the silica is etched using photoetching, dry etch process
Layer 31, removal are located at described on second lenticule 132, the third lenticule 133 and the 4th lenticule 134
Silicon dioxide layer 31, the silicon dioxide layer 31 remained on first lenticule 131 form the described first sub- delustring
Film 32.Finally, etching the amorphous carbon film 30, removal is located at second lenticule 132,133 and of third lenticule
The amorphous carbon film 30 on 4th lenticule 134 remains on the amorphous on first lenticule 131
C film 30 forms the described second sub- matt film 33, as shown in FIGURE 3 E.
The back side illumination image sensor and its manufacturing method that present embodiment provides include that white filters by setting
On the one hand the brightness of imaging picture can be improved, so that back side illumination image in the white pixel of piece, the first sensor devices and matt film
Sensor can be applied to the application field that back side illumination image sensor is expanded in a variety of environment；On the other hand, matt film
The light that can be reduced into first sensor devices is set, avoids highly sensitive white pixel and is saturated too early, prevent
Image obscures, and improves image quality, improves the performance of back side illumination image sensor.
Second specific embodiment
Present embodiment provides a kind of back side illumination image sensor and its manufacturing method, and attached drawing 4 is the present invention the
The structural schematic diagram of back side illumination image sensor in two specific embodiments.For with the first specific embodiment something in common,
Present embodiment repeats no more, below the difference of main narration and the first specific embodiment.
As shown in figure 4, the back side illumination image sensor that present embodiment provides includes substrate 20 and is located at described
The white pixel unit I on 20 surface of substrate；The white pixel unit I includes:
White filter 411；
First sensor devices 421, for receiving the optical signal through the white filter 411 filtering and being converted into electricity
Signal；
Matt film 44 enters first sensor devices for reducing positioned at the incident side of first sensor devices 421
421 light.
The white pixel unit I in present embodiment further includes insulating layer 45；The insulating layer 45 is located at institute
It states between white filter 411 and first sensor devices 421；
The matt film 44 is located at the surface that the insulating layer 45 deviates from first sensor devices 421, the white filter
Mating plate 411 is located at 44 surface of matt film.
Specifically, 40 surface of substrate has the multiple pixel regions being arranged in array, and illustrates only a picture in Fig. 4
The structure in plain region.In addition to that can also have red pixel cell II, indigo plant with white pixel unit I in the pixel region
The combination of one or more of color pixel unit III, green pixel cell IV.Present embodiment is with the pixel unit
Including being illustrated for white pixel unit I, red pixel cell II, blue pixel cells III and green pixel cell IV.
Insulating layer 45 described in present embodiment is transparent insulating layer.
As shown in figure 4, the red pixel cell II includes Red lightscreening plate 412 and the second sensor devices 422；The indigo plant
Color pixel unit III includes blue color filter 413 and third sensor devices 423；The green pixel cell IV includes green filter
Piece 414 and the 4th sensor devices 424.The white filter 411, the Red lightscreening plate 412, the blue color filter 413
It is mutually isolated by metal isolated gate 46 with the green color filter 414；It is first sensor devices 421, described second photosensitive
Device 422, the third sensor devices 423 and the 4th sensor devices 424 by deep trench isolation structure 47 and with institute
It is mutually isolated to state the corresponding fleet plough groove isolation structure 48 of deep trench isolation structure 47.
Present embodiment by the matt film 44 be arranged the insulating layer 45 and the white filter 411 it
Between, convenient for controlling the position of the matt film 44, to avoid to surrounding other pixel units (such as red pixel cell II and/
Or blue pixel cells III) impact.
Matt film 44 described in present embodiment can be by one of amorphous carbon, graphene, silica
The monofilm that material is constituted is also possible to mutual by any two kinds in amorphous carbon, graphene, silica or three kinds of materials
The stacked multilayer film constituted, those skilled in the art can select according to actual needs.
Correspondingly, specific steps of the present embodiment formation white pixel unit I in 40 surface of substrate include:
The first sensor devices 421 are formed in 40 surface of substrate；
Form the surface that insulating layer 45 deviates from the substrate 40 in first sensor devices 421；
Form the surface that matt film 44 deviates from first sensor devices 421 in the insulating layer 45；
Form the surface that white filter 411 deviates from the insulating layer 45 in the matt film 44.
Specifically, present embodiment forms latticed metal after the preparation for completing the insulating layer 45
Isolated gate 46 is in 45 surface of insulating layer；Then corresponding with the white pixel unit I in the metal isolated gate 46
One of depositing amorphous carbon, graphene, silica or multiple material, form the matt film 44 in being open；It is later
44 surface of matt film forms the white filter 411.Described in present embodiment it is a variety of refer to it is two or more.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of back side illumination image sensor, which is characterized in that including substrate and positioned at the white pixel of the substrate surface
Unit；The white pixel unit includes:
White filter；
First sensor devices, for receiving the optical signal filtered through the white filter and being converted into electric signal；
Matt film, positioned at the incident side of first sensor devices, for reducing the light into first sensor devices.
2. back side illumination image sensor according to claim 1, which is characterized in that the white pixel unit further includes
One lenticule；First lenticule is located at the incident side of the white filter, enters the white filter for converging
Light；
The matt film is covered in the incidence surface of first lenticule.
3. back side illumination image sensor according to claim 1, which is characterized in that the white pixel unit further includes exhausted
Edge layer；The insulating layer is between the white filter and first sensor devices；
The matt film is located at the surface that the insulating layer deviates from first sensor devices, and the white filter is located at described
Delustring film surface.
4. back side illumination image sensor according to claim 1, which is characterized in that the material of the matt film is amorphous
One of carbon, graphene, silica or a variety of combinations.
5. back side illumination image sensor according to claim 1, which is characterized in that further include being located at the substrate surface
Red pixel cell；The red pixel cell includes:
Red lightscreening plate is arranged and mutually isolated with the white filter same layer；
Second sensor devices are arranged and mutual positioned at the light emission side of the Red lightscreening plate with the first sensor devices same layer
Isolation.
6. a kind of manufacturing method of back side illumination image sensor, which comprises the steps of:
One substrate is provided；
White pixel unit is formed in the substrate surface, the white pixel unit includes white filter, the first photoreceptor
Part and matt film；First sensor devices are for receiving the optical signal filtered through the white filter and being converted into electricity
Signal；The matt film is located at the incident side of first sensor devices, for reducing the light into first sensor devices
Line.
7. the manufacturing method of back side illumination image sensor according to claim 6, which is characterized in that form white pixel list
Member includes: in the specific steps of the substrate surface
The first sensor devices are formed in the substrate surface；
White filter is formed in the incident side of first sensor devices；
The first lenticule is formed in the incident side of the white filter；
Matt film is formed in the incidence surface of first lenticule.
8. the manufacturing method of back side illumination image sensor according to claim 6, which is characterized in that form white pixel list
Member includes: in the specific steps of the substrate surface
The first sensor devices are formed in the substrate surface；
Form the surface that insulating layer deviates from the substrate in first sensor devices；
Form the surface that matt film deviates from first sensor devices in the insulating layer；
Form the surface that white filter deviates from the insulating layer in the matt film.
9. the manufacturing method of back side illumination image sensor according to claim 6, which is characterized in that the material of the matt film
Material is one of amorphous carbon, graphene, silica or a variety of combinations.
10. the manufacturing method of back side illumination image sensor according to claim 6, which is characterized in that further include walking as follows
It is rapid:
Red pixel cell is formed in the substrate surface, the red pixel cell includes Red lightscreening plate and the second photoreceptor
Part；The Red lightscreening plate is arranged and mutually isolated with the white filter same layer；
Second sensor devices are located at the light emission side of the Red lightscreening plate, with the first sensor devices same layer setting and phase
Mutually isolation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910226207.3A CN109950264A (en) | 2019-03-25 | 2019-03-25 | Back side illumination image sensor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910226207.3A CN109950264A (en) | 2019-03-25 | 2019-03-25 | Back side illumination image sensor and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109950264A true CN109950264A (en) | 2019-06-28 |
Family
ID=67011688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910226207.3A Pending CN109950264A (en) | 2019-03-25 | 2019-03-25 | Back side illumination image sensor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109950264A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002717A (en) * | 2020-07-31 | 2020-11-27 | 深圳奥比中光科技有限公司 | Image sensor pixel array structure and manufacturing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610125A (en) * | 2003-10-23 | 2005-04-27 | 三洋电机株式会社 | Solid-state camera |
| CN1822373A (en) * | 2004-12-10 | 2006-08-23 | 索尼株式会社 | Method and apparatus for acquiring physical information, method for manufacturing the apparatus |
| CN102254922A (en) * | 2010-05-20 | 2011-11-23 | 索尼公司 | Solid-state imaging device and electronic equipment |
| CN103004212A (en) * | 2010-09-27 | 2013-03-27 | 松下电器产业株式会社 | Solid-state imaging device and imaging device |
| CN103515403A (en) * | 2012-06-14 | 2014-01-15 | 索尼公司 | Solid-state imaging element, calibration method of solid-state imaging element, shutter device and electronic apparatus |
| CN109003993A (en) * | 2018-07-26 | 2018-12-14 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
-
2019
- 2019-03-25 CN CN201910226207.3A patent/CN109950264A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610125A (en) * | 2003-10-23 | 2005-04-27 | 三洋电机株式会社 | Solid-state camera |
| CN1822373A (en) * | 2004-12-10 | 2006-08-23 | 索尼株式会社 | Method and apparatus for acquiring physical information, method for manufacturing the apparatus |
| CN102254922A (en) * | 2010-05-20 | 2011-11-23 | 索尼公司 | Solid-state imaging device and electronic equipment |
| CN103004212A (en) * | 2010-09-27 | 2013-03-27 | 松下电器产业株式会社 | Solid-state imaging device and imaging device |
| CN103515403A (en) * | 2012-06-14 | 2014-01-15 | 索尼公司 | Solid-state imaging element, calibration method of solid-state imaging element, shutter device and electronic apparatus |
| CN109003993A (en) * | 2018-07-26 | 2018-12-14 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002717A (en) * | 2020-07-31 | 2020-11-27 | 深圳奥比中光科技有限公司 | Image sensor pixel array structure and manufacturing method |
| CN112002717B (en) * | 2020-07-31 | 2023-10-27 | 奥比中光科技集团股份有限公司 | Pixel array structure of image sensor and manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11676984B2 (en) | Solid-state imaging device, method of manufacturing the same, and electronic device | |
| CN105280661B (en) | Photographic device and its manufacturing method | |
| JP4798232B2 (en) | Solid-state imaging device, manufacturing method thereof, and electronic apparatus | |
| TWI459543B (en) | Solid-state image capturing device and electronic device | |
| CN102651376B (en) | Solid camera head and manufacture method thereof and electronic equipment | |
| WO2016072281A1 (en) | Solid-state imaging element, method for manufacturing same, and electronic device | |
| CN106129077B (en) | Imaging device and electronic equipment | |
| TWI416715B (en) | A solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device | |
| US20100149396A1 (en) | Image sensor with inlaid color pixels in etched panchromatic array | |
| US20160013233A1 (en) | Solid-state imaging device, method for manufacturing same, and electronic device | |
| JP5725123B2 (en) | Solid-state imaging device and electronic device | |
| KR20070061530A (en) | Solid-state image sensor | |
| CN109003995A (en) | Imaging sensor, electronic device and its manufacturing method | |
| US11605666B2 (en) | Solid-state imaging device, manufacturing method of the same, and electronic apparatus having filters of different thicknesses | |
| CN103730477B (en) | Image sensor pixel array and forming method thereof based on dark angle compensation | |
| JP5360102B2 (en) | Solid-state imaging device and electronic device | |
| CN109166871B (en) | Image sensor and manufacturing method thereof | |
| JPH08294059A (en) | Image pickup device | |
| CN103066086B (en) | A kind of cmos image sensor pel array and its manufacture method | |
| JP5418527B2 (en) | Solid-state imaging device and electronic device | |
| CN109950264A (en) | Back side illumination image sensor and its manufacturing method | |
| JP2011135100A (en) | Solid-state imaging device and electronic apparatus | |
| KR100718785B1 (en) | Cmos image sensor, and method for fabricating the same | |
| US20110278689A1 (en) | Solid-state imaging device and manufacturing method thereof | |
| JP2006216904A (en) | Color solid state image sensor and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190628 |
|
| WD01 | Invention patent application deemed withdrawn after publication |